ELECTRONIC DEVICES

BEG231EC

Year: II Semester: I

Teaching Schedule Examination Scheme

Hours/Week

Theory Tutorial Practical Internal Assessment Final Total

Theory Practical* Theory* Practical

3 1 3/2 125
*

20 25 80 -

* Continuous

** Duration: 3 hours

Course Objectives: To understand the basics and working principles of electronic

semiconductor devices and to provide the method for analysis.

1. Semiconductor Diode: (10 hours)

1.1. Review of conduction in semiconductors…………………………………………….1Hrs
1.2. Theory of p-n junction: Band structure of p-n junction, the p-n junction as a diode…2Hrs
1.3. V-I characteristic, Forward and Reverse Characteristic and the effects of temperature in
V-I characteristics…………………………………………………………………....2Hrs
1.4. Diode Current Equation, Reverse Saturation Current and their Numerical………….2Hrs
1.5. Space charge or transition region capacitance and its effects: Diffusion capacitance…
2Hrs
1.6. Diode switching times, DC Load line and Diode Internal Resistance………………2Hrs
1.7. Zener diode, Zener Diode as Voltage Regulator…………………………………….2Hrs
1.8. Tunnel diode, construction and numerical of Zener Diode……………………….…2Hrs
1.9. Characteristics, and Applications of Schottky diode…………………….…………..2Hrs
1.10. Varactor diode and Metal Oxide Varister………………………….…………1Hrs

2. Bi-polar junction Transistor (BJT): (10 hours)

2.1. Construction of a BJT, voltage controlled current source and current controlled current
source…………………………………………………………….………………….2Hrs
2.2. The Ebers-Moll equations…………………………………………………………..1Hrs
2.3. Current components…………………………………………………………………1Hrs
2.4. Analytical expression for transistor characteristics…………………………………1Hrs
2.5. BJT switching time, Maximum voltage rating………………………………………2Hrs
2.6. Avalanche effect, Reach-through………………………….....................................1Hrs
 2.7. The transistor as an amplifier, CB, CE, and CC configurations with Input and Output
Characteristic…………………………………………………….……………….4Hrs
2.8. Transistor Load Lines and Numerical calculation of Q point…………….….….2Hrs
2.9. Numerical of Transistor in CE, CC and CB…………………………..………....4Hrs

3. BJT biasing and thermal stabilization: (4 hours)

3.1. Types of biasing………………………………………………………………….2Hrs
3.2. Bias stability: Bias compensation………………………………………………..1Hrs
3.3. Thermal runway and stability…………………………………………………….1Hrs
3.4. Numerical of Transistor biasing and Design..……………………………………2Hrs

4. The Small signal low frequency analysis model of BJT: (5 hours)

4.1. Low frequency hybrid model……………………………………………….……...,1Hrs
4.2. Transistor configurations and their hybrid model: measurement of h-parameters…2Hrs
4.3. Analysis of a transistor amplifier circuit using h-parameters………………….…...2Hrs
4.4. Numerical for Hybrid Model………………………………………….……………2Hrs

5. The high frequency model of BJT: (4 hours)

5.1. High frequency model (t-model)…………………………………………………..2Hrs
5.2. Transistor configurations and their high frequency model………………………..2Hrs
5.3. High frequency current gain……………………………………………………….2Hrs

6. The Junction Field Effect transistor (JFET): (7 hours)

6.1. Construction and types…………………………………………………………….2Hrs
6.2. The pinch-off voltage and its importance………………………………………….1Hrs
6.3. Biasing and load line: V-I characteristics, Configuration of JFET, Small signal model
and analysis…………………………………………………………………..……2Hrs
6.4. A generalized FET Amplifier: Uni-Junction transistor……………..…………….2Hrs
6.5. Numerical of JFET……………………………………………….……………….2Hrs

7. The metal oxide semiconductor FET: (4 hours)

7.1. Construction and types……………………………….……………………………1Hrs
7.2. Load line and biasing……………………………………………………………...2Hrs
7.3. V-I characteristics, small model and analysis……….…………..………………..2Hrs

Total Course Planned:67

Subject Teacher: Er.Shrijandra Nath Kayastha