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BD135/137/139

BD135/137/139
Medium Power Linear and Switching Applications
Complement to BD136, BD138 and BD140 respectively

TO-126 2.Collector 3.Base

1. Emitter

NPN Epitaxial Silicon Transistor


Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BD135 : BD137 : BD139 : BD135 : BD137 : BD139 Value 45 60 80 45 60 80 5 1.5 3.0 0.5 12.5 1.25 150 - 55 ~ 150 Units V V V V V V V A A A W W C C

VCEO

Collector-Emitter Voltage

VEBO IC ICP IB PC PC TJ TSTG

Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Collector Dissipation (Ta=25C) Junction Temperature Storage Temperature

Electrical Characteristics TC=25C unless otherwise noted


Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BD135 : BD137 : BD139 Collector Cut-off Current Emitter Cut-off Current DC Current Gain : ALL DEVICE : ALL DEVICE : BD135 : BD137, BD139 Test Condition IC = 30mA, IB = 0 Min. 45 60 80 0.1 10 25 25 40 40 Typ. Max. Units V V V A A

ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(on)

VCB = 30V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 5mA VCE = 2V, IC = 0.5A VCE = 2V, IC = 150mA IC = 500mA, IB = 50mA VCE = 2V, IC = 0.5A

250 160 0.5 1 V V

Collector-Emitter Saturation Voltage Base-Emitter ON Voltage

hFE Classification
Classification hFE3
2000 Fairchild Semiconductor International

6 40 ~ 100

10 63 ~ 160

16 100 ~ 250
Rev. A, February 2000

BD135/137/139

Typical Characteristics

100 90 80

VCE(sat)[mV], SATURATION VOLTAGE

VCE = 2V

500 450 400 350 300 250 200 150 100 50 0 1E-3

hFE, DC CURRENT GAIN

70 60 50 40 30 20 10 0 10 100 1000

IC = 20 IB
0.01 0.1 1

IC = 10

IB

10

IC[mA], COLLECTOR CURRENT

IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain

Figure 2. Collector-Emitter Saturation Voltage

1.1

10

VBE[V], BASE-EMITTER VOLTAGE

1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1E-3 0.01 0.01 0.1 1 10 1

IC[A], COLLECTOR CURRENT

t) (sa V BE 0 I B 1 IC = ) (on V V BE =5 V CE

IC MAX. (Pulsed) IC MAX. (Continuous)


s 1m
1

10us

100us

DC

0.1

BD139 BD137 BD135

10

100

IC[A], COLLECTOR CURRENT

VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 3. Base-Emitter Voltage

Figure 4. Safe Operating Area

20.0

17.5

PC[W], POWER DISSIPATION

15.0

12.5

10.0

7.5

5.0

2.5

0.0 0 25 50
o

75

100

125

150

175

TC[ C], CASE TEMPERATURE

Figure 5. Power Derating

2000 Fairchild Semiconductor International

Rev. A, February 2000

BD135/137/139

Package Demensions

TO-126
0.10

3.90

8.00 0.30

3.25 0.20

14.20MAX

3.20 0.10

11.00

0.20

(1.00) 0.75 0.10 1.60 0.10 0.75 0.10


0.30

(0.50) 1.75 0.20

#1 2.28TYP [2.280.20] 2.28TYP [2.280.20]

13.06

16.10

0.20

0.50 0.05

+0.10

Dimensions in Millimeters
2000 Fairchild Semiconductor International Rev. A, February 2000

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PRODUCT STATUS DEFINITIONS Definition of Terms


Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2000 Fairchild Semiconductor International

Rev. E

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