Author: Tansu, Nelson Publication Year Total Volume citation 1253 Self citation 713 % Self citation 56.

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Self-consistent gain analysis of type-II 'W' InGaN- Zhao H., Arif R.A., Tansu N. Journal of Applied Physics 2008 GaNAs quantum well lasers Zhao H., Liu G., Li X.H., Huang G.S., Growths of staggered InGaN quantum wells light- Poplawsky J.D., Penn emitting diodes emitting at 520-525 nm S.T., Dierolf V., Tansu N. Applied Physics Letters 2009 employing graded growth-temperature profile Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical 2010 vapor deposition Effect of crystal-field split-off hole and heavyhole bands crossover on gain characteristics of 2010 high Al-content AlGaN quantum well lasers Analysis of InGaN-delta-InN quantum wells for 2010 light-emitting diodes Tong H., Zhang J., Liu G., Herbsommer J.A., Huang G.S., Tansu N. Applied Physics Letters

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Zhang J., Zhao H., Tansu N. Zhao H., Liu G., Tansu N. Ee Y.-K., Li X.-H., Biser J., Cao W., Chan Abbreviated MOVPE nucleation of III-nitride light- H.M., Vinci R.P., Tansu N. 2010 emitting diodes on nano-patterned sapphire Characteristics of InGaAsN/GaAsN quantum well Yeh J.-Y., Mawst L.J., Tansu N. 2004 lasers emitting in the 1.4-?m regime Characterizations of Seebeck coefficients and thermoelectric figures of merit for AlInN alloys 2011 with various In-contents Nanostructure engineering of staggered InGaN quantum wells light emitting diodes emitting at 2008 420-510 nm

Applied Physics Letters Applied Physics Letters

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Journal of Crystal Growth Journal of Crystal Growth

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Zhang J., Tong H., Liu G., Herbsommer J.A., Huang G.S., Tansu N. Journal of Applied Physics

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Arif R.A., Ee Y.-K., Physica Status Solidi (A) Tansu N. Applications and Materials Khandekar A.A., Hawkins B.E., Kuech T.F., Yeh J.Y., Mawst Characteristics of GaAsNGaAsSb type-II quantum L.J., Meyer J.R., wells grown by metalorganic vapor phase epitaxy Vurgaftman I., Tansu Journal of Applied Physics N. 2005 on GaAs substrates

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Xu G., Fernelius N., Hopkins F.K., Gallinat C.S., Koblmuller G., Speck J.S., Ding Y.J., Zhao H., Liu G., Jamil THz generation from InN films due to destructive M., Tansu N., Zotova interference between optical rectification and I.B., Stutz C.E., Diggs Semiconductor Science and D.E. Technology 2010 photocurrent surge Tripathy S.K., Xu G., Mu X., Ding Y.J., Jamil M., Arif R.A., Tansu N., Khurgin J.B. Applied Physics Letters Zhao H., Zhang J., Liu G., Tansu N. Applied Physics Letters Yeh J.-Y., Tansu N., Mawst L.J. Anton O.H., Patel D., Menoni C.S., Yeh J.Y., Van Roy T.T., Mawst L.J., Pikal J.M., Tansu N.

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Phonon-assisted ultraviolet anti-Stokes photoluminescence from GaN film grown on Si 2008 (111) substrate Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based 2011 light-emitting diodes Effects of growth pause on the structural and optical properties of InGaAsN-InGaAsP quantum 2004 well

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Journal of Crystal Growth

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Frequency response of strain-compensated 2005 InGaAsN-GaAsP-GaAs SQW lasers Optical gain and spontaneous emission of straincompensated InGaN-AlGaN quantum wells Zhao H., Arif R.A., Ee Y.K., Tansu N. 2008 including carrier screening effect Tansu N., Schubert E.F., Kuo H.-C., Smowton P.M. 2009 Introduction to the issue on solid-state lighting Tong H., Zhao H., Handara V.A., Analysis of Thermoelectric Characteristics of Herbsommer J.A., Tansu N. 2009 AlGaN and InGaN Semiconductors Sun G., Xu G., Ding Efficient terahertz generation within InGaN/GaN Y.J., Zhao H., Liu G., Zhang J., Tansu N. 2011 multiple quantum wells Metalorganic vapor phase epitaxy of III-nitride light-emitting diodes on nanopatterned AGOG 2009 sapphire substrate by abbreviated growth mode Current injection efficiency induced efficiencydroop in InGaN quantum well light-emitting 2010 diodes Design analysis of 1550-nm GaAsSb-(In)GaAsN 2003 type-II quantum-well laser active regions Ee Y.-K., Biser J.M., Cao W., Chan H.M., Vinci R.P., Tansu N. Zhao H., Liu G., Arif R.A., Tansu N.

IEEE Journal on Selected Topics in Quantum Electronics Proceedings of SPIE - The International Society for Optical Engineering IEEE Journal on Selected Topics in Quantum Electronics Proceedings of SPIE - The International Society for Optical Engineering IEEE Journal on Selected Topics in Quantum Electronics IEEE Journal on Selected Topics in Quantum Electronics

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Solid-State Electronics IEEE Journal of Quantum Tansu N., Mawst L.J. Electronics

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MOVPE and photoluminescence of narrow band gap (0.77 eV) InN on GaN/sapphire by pulsed growth mode Type-II InGaN-GaNAs quantum wells for lasers applications Self-cnsistent analysis of strain-compensated InGaN-AlGaN quantum wells for lasers and lightemitting diodes Optical gain analysis of strain-compensated InGaN-AlGaN quantum well active regions for lasers emitting at 420-500 nm

Jamil M., Zhao H., Physica Status Solidi (A) Higgins J.B., Tansu N. Applications and Materials Arif R.A., Zhao H., Tansu N. Applied Physics Letters Zhao H., Arif R.A., Ee IEEE Journal of Quantum Y.-K., Tansu N. Electronics Zhao H., Arif R.A., Ee Optical and Quantum Y.-K., Tansu N. Electronics Zhao H.P., Liu G.Y., Li X.-H., Arif R.A., Huang G.S., Poplawsky J.D., Tafon Penn S., Dierolf IET Optoelectronics V., Tansu N. Zhao H., Tansu N. Zhao H., Arif R.A., Tansu N. Journal of Applied Physics IEEE Journal on Selected Topics in Quantum Electronics

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Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green 2009 spectral regime Optical gain characteristics of staggered InGaN 2010 quantum wells lasers Design analysis of staggered InGaN quantum 2009 wells light-emitting diodes at 500540 nm Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77 eV) InN grown on GaN/sapphire using 2008 pulsed MOVPE

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Optimization of light extraction efficiency of IIInitride LEDs with self-assembled colloidal-based 2009 microlenses Polarization engineering via staggered InGaN quantum wells for radiative efficiency 2007 enhancement of light emitting diodes Self-assembled InGaN quantum dots on GaN emitting at 520 nm grown by metalorganic vapor2008 phase epitaxy

Jamil M., Zhao H., Higgins J.B., Tansu N. Ee Y.-K., Kumnorkaew P., Arif R.A., Tong H., Zhao H., Gilchrist J.F., Tansu N.

Journal of Crystal Growth

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IEEE Journal on Selected Topics in Quantum Electronics

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Arif R.A., Ee Y.-K., Tansu N. Applied Physics Letters Ee Y.-K., Zhao H., Arif R.A., Jamil M., Tansu Journal of Crystal Growth N.

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Jamil M., Arif R.A., Ee MOVPE of InN films on GaN templates grown on Y.-K., Tong H., Higgins J.B., Tansu N. 2008 sapphire and silicon(111) substrates Vurgaftman I., Meyer InP-based dilute-nitride mid-infrared type-II "W" J.R., Tansu N., Mawst L.J. 2004 quantum-well lasers Spontaneous emission and characteristics of staggered InGaN quantum-well light-emitting Arif R.A., Zhao H., Ee Y.-K., Tansu N. 2008 diodes Ee Y.-K., Arif R.A., Enhancement of light extraction efficiency of Tansu N., InGaN quantum wells light emitting diodes using Kumnorkaew P., Gilchrist J.F. 2007 Si O2 /polystyrene microlens arrays Ee Y.-K., Kumnorkaew P., Arif Light extraction efficiency enhancement of InGaN R.A., Tong H., quantum wells light-emitting diodes with Gilchrist J.F., Tansu N. 2009 polydimethylsiloxane concave microstructures

Physica Status Solidi (A) Applications and Materials

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Journal of Applied Physics IEEE Journal of Quantum Electronics

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Applied Physics Letters

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Optics Express

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Thranhardt A., Hader J., Moloney J.V., Chow W.W., Kuznetsova I., Schlichenmaier C., Koch S.W., Shterengas L., Nitrogen incorporation effects on gain properties Belenky G., Yeh J.-Y., of GaInNAs lasers: Experiment and theory Mawst L.J., Tansu N. Applied Physics Letters Yeh J.-Y., Mawst L.J., Khandekar A.A., Kuech T.F., Vurgaftman I., Meyer Characteristics of InGaAsN-GaAsSb type-II "W" Journal of Crystal Growth J.R., Tansu N. quantum wells Meyer J.R., Vurgaftman I., Khandekar A.A., Progress in Biomedical Hawkins B.E., Yeh Optics and Imaging Dilute nitride type-II "W" quantum well lasers for J.Y., Mawst L.J., the near-infrared and mid-infrared Kuech T.F., Tansu N. Proceedings of SPIE Kumnorkaew P., Ee Y.K., Tansu N., Gilchrist Investigation of the deposition of microsphere Langmuir J.F. monolayers for fabrication of microlens arrays

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Improved photoluminescence of InGaAsN(In)GaAsP quantum well by organometallic vapor 2003 phase epitaxy using growth pause annealing Physics and characteristics of high performance 1200 nm InGaAs and 1300-1400 nm InGaAsN quantum well lasers obtained by metal-organic 2004 chemical vapour deposition

Tansu N., Yeh J.-Y., Mawst L.J.

Applied Physics Letters

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Tansu N., Yeh J.-Y., Mawst L.J.

Journal of Physics Condensed Matter

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Palmer D.J., Smowton P.M., Blood Effect of nitrogen on gain and efficiency in P., Yeh J.-Y., Mawst InGaAsN quantum-well lasers L.J., Tansu N. Applied Physics Letters Vurgaftman I., Meyer (In)GaAsN-based type-II "W" quantum-well lasers J.R., Tansu N., Mawst for emission at ? = 1.55 ?m L.J. Applied Physics Letters Yeh J.-Y., Mawst L.J., Khandekar A.A., Kuech T.F., Long wavelength emission of InGaAsNGaAsSb Vurgaftman I., Meyer Applied Physics Letters type II "w" quantum wells J.R., Tansu N. The role of carrier transport on the current injection efficiency of InGaAsN quantum-well Yeh J.-Y., Mawst L.J., IEEE Photonics Technology lasers Tansu N. Letters Tsvid G., Kirch J., Mawst L.J., Kanskar Spontaneous radiative efficiency and gain M., Cai J., Arif R.A., characteristics of strained-layer InGaAs-GaAs Tansu N., Smowton IEEE Journal of Quantum quantum-well lasers P.M., Blood P. Electronics Experimental evidence of carrier leakage in Tansu N., Yeh J.-Y., InGaAsN quantum-well lasers Mawst L.J. Applied Physics Letters Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of Tansu N., Yeh J.-Y., 1215-1233 nm Mawst L.J. Applied Physics Letters Shterengas L., Differential gain and linewidth-enhancement Belenky G.L., Yeh J.- IEEE Journal on Selected factor in dilute-nitride GaAs-based 1.3-/spl mu/m Y., Mawst L.J., Tansu Topics in Quantum diode lasers N. Electronics The role of hole leakage in 1300-nm InGaAsN quantum-well lasers Tansu N., Mawst L.J. Applied Physics Letters High-Performance 1200-nm InGaAs and 1300-nm IEEE Journal on Selected InGaAsN Quantum-Well Lasers by Metalorganic Tansu N., Yeh J.-Y., Topics in Quantum Mawst L.J. Chemical Vapor Deposition Electronics High-performance strain-compensated InGaAsGaAsP-GaAs (? = 1.17 ?m) quantum-well diode IEEE Photonics Technology lasers Tansu N., Mawst L.J. Letters Tansu N., Chang Y.-L., Takeuchi T., Bour Temperature analysis and characteristics of D.P., Corzine S.W., IEEE Journal of Quantum highly strained InGaAs-GaAsP-GaAs (? > 1.17 ?m) Tan M.R.T., Mawst Electronics quantum-well lasers L.J.

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Long wavelength MOCVD grown InGaAsN-GaAsN Yeh J.-Y., Tansu N., Mawst L.J. 2004 quantum well lasers emitting at 1.378-1.41 ?m Anton O., Menoni Increased monomolecular recombination in C.S., Yeh J.Y., Mawst MOCVD grown 1.3-?m InGaAsN-GaAsP-GaAs QW L.J., Pikal J.M., Tansu N. 2005 lasers from carrier lifetime measurements Temperature sensitivity of 1300-nm InGaAsN Tansu N., Mawst L.J. 2002 quantum-well lasers Current injection efficiency of InGaAsN quantumTansu N., Mawst L.J. 2005 well lasers Low-threshold strain-compensated InGaAs(N) (? Tansu N., Mawst L.J. 2002 = 1.19-1.31 ?m) quantum-well lasers Low-temperature sensitive, compressively strained InGaAsP active (? = 0.78-0.85 ?m) region Tansu N., Zhou D., Mawst L.J. 2000 diode lasers

Electronics Letters

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IEEE Photonics Technology Letters IEEE Photonics Technology Letters Journal of Applied Physics IEEE Photonics Technology Letters IEEE Photonics Technology Letters

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Temperature-dependent photoluminescence of highly strained InGaAsN/GaAs quantum wells (A = 1.28-1.45 ?m) with GaAsP strain-compensated 2005 layers

Lai F.-I., Mawst L.J., Kuo H.-C., Chang Y.- Japanese Journal of Applied H., Tsai M.-Y., Chu C.- Physics, Part 1: Regular P., Kuo S.-Y., Wang S.- Papers and Short Notes and C., Tansu N., Yeh J.-Y. Review Papers

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