FDS9933A

November 1998

FDS9933A
Dual P-Channel 2.5V Specified PowerTrench MOSFET
General Description
These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features -3.8 A, -20 V. RDS(on) = 0.075

Low gate charge ( 7nC typical ). Fast switching speed. High performance trench technology for extremely low RDS(on). High power and current handling capability. @ VGS = -4.5 V RDS(on) = 0.105 @ VGS = -2.5 V.

Applications Load switch DC/DC converter Motor drives

D2 D1 D1 G2 D2

5 6 7 8

4 3 2 1

SO-8

pin 1

S1

G1

S2

Absolute Maximum Ratings

Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed

TA=25 C unless otherwise noted

Parameter

FDS9933A
-20
(Note 1a)

Units
V V A W

8 -3.8 -20 2.0

Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)

1.6 1.0 0.9 -55 to +150 C

TJ, Tstg

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

78 40

C/W C/W

Package Marking and Ordering Information

Device Marking FDS9933A Device FDS9933A Reel Size 13 Tape width 12mm

Quantity
2500 units

1998 Fairchild Semiconductor Corporation

FDS9933A Rev. C

FDS9933A

DMOS Electrical Characteristics

Symbol Parameter

TA = 25C unless otherwise noted

Test Conditions

Min

Typ

Max Units

Off Characteristics
BVDSS VDSS TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)

VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C VDS = -16 V, VGS = 0 V VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V

-20 -16 -1 100 -100

V mV/C A nA nA

On Characteristics
VGS(th) VGS(th) TJ RDS(on)

Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance

VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C VGS = -4.5 V, ID = -3.8 A VGS = -4.5 V, ID = -3.8 A, TJ = 125C VGS = -2.5 V, ID = -3.3 A VGS = -4.5 V, VDS = -5.0 V VDS = -4.5 V, ID = -3.8 A

-0.4

-0.8 2.5 0.058 0.086 0.084

-1.5

V mV/C

0.075 0.12 0.105

ID(on) gFS

-10 10

A S

Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)

VDS = -10 V, VGS = 0 V, f = 1.0 MHz

600 175 80

pF pF pF

Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge

VDD = -5 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 6.0

6 9 31 28

12 18 50 42 10

ns ns ns ns nC nC nC

VDS = -10 V, ID = -3.8 A, VGS = -4.5 V

7 1.3 2

Drain-Source Diode Characteristics and Maximum Ratings

IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A
(Note 2)

-1.3 -0.75 -1.2

A V

Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design.

a) 78 C/W when mounted on a 0.5 in2 pad of 2 oz. copper.

b) 125 C/W when mounted on a 0.02 in2 pad of 2 oz. copper.

c) 135 C/W when mounted on a 0.003 in2 pad of 2 oz. copper.

Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
FDS9933A Rev. C

FDS9933A

Typical Characteristics

(continued)

20

0 . 12

V G S= -4.5V

-3. 5V

- I D , D R AI N -S OU R C E CU R R E NT (A)

-3.0V
R DS( ON ) , NORM A LIZED D R AI N -SOU RC E ON -R ESI ST A NC E 15

V GS = -2 . 0 V
0. 1

-2.5V

-2 . 5 V
0 . 08

10

-3 . 0 V -3 . 5 V -4 . 5 V

-2.0V
5

0 . 06

-1.5V
0 0 1 2 3 4 5 - VDS , D R AI N-S OU R CE VOLTA GE (V)

0 . 04 0 4 8 12 16 20 - I D , D RA I N C U RR EN T (A)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.

0.25

1 .6 DRAIN-SOURCE ON-RESISTANCE

R D S(ON) , NO ALI ZED RM

1 .4

ID = -3. 8A V GS = -4 .5V

R D S(ON) , ON-RESISTA NCE (OHM )

I D = -2.0 A
0.2

1 .2

0.15

0.1

T J= 1 2 5 C

0 .8

0.05

25C

0 .6 -50

-25

25

50

75

100

125

150

TJ , JUNCT ION TEMPERATURE ( C)

- VGS , GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation withTemperature.

10

Figure 4. On-Resistance Variation with Gate-to-Source Voltage.

10

VDS = -5V
- ID, DRAIN CURRENT (A) 8

TJ = -55C

125 C
-I S , R EV ER S E D RA IN C UR R E N T (A )

V GS = 0V
1

25C
6

T J = 125 C
0.1

25 C -55 C

0.01

0.001

0 1 1.5 2 2.5 3 -VGS , GATE T O SOURCE VOLTAGE (V)

0.0001 0 0.2 -V
SD

0.4

0.6

0.8

1.2

, BOD Y D I OD E FOR W AR D VOLT AGE (V )

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.

FDS9933A Rev. C

FDS9933A

Typical Characteristics
5

(continued)

2000

I D = -3 .8 A
-V G S , GATE -SOU R C E V OLTAG E (V ) 4

V D S = -5 V
C AP AC I TA NC E (pF)

-10 V -15 V

1000

500

Ciss

200

Coss f = 1 M Hz VG S = 0 V
0.2 0.5 1 2 5

100

Crss
10 20

0 0 2 4 6 8 10 Q g , GA TE C H AR GE (nC )

50 0.1

-V DS , D R A IN T O S OU R CE V OLTA GE (V)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

50
M IT

100
S RD ( ON ) LI

30

us
25 20 PO W E R (W ) 15 10 5 0 0. 01

10 - I D , D R AI N C U R R EN T (A) 3

1m 10 m

100

SING LE PUL SE RJ A =13 5 C/W T A = 2 5C

ms

0 .5

0. 05

V G S = -4.5V SING L E PUL S E R J A = 135 C/ W A TA = 2 5C

0 .3 1 2

1s 10 s DC

0. 01 0 .1

10

30

0. 1

0. 5

10

50 1 00

3 00

- VD S , DR A IN -SO UR C E V OLTA GE (V)

S IN GL E P UL S E TI ME (S EC )

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum Power Dissipation.

1 T RANSIENT THERMAL RESISTANCE 0.5 0.2 0.1 0.05 0.02 0.01 0 .005 0 .002 0 .001 0. 001 0 0 .001 0.01 0.1 t1, TIME (s ec) 1
D = 0 .5 0 .2 0 .1 0 5 .0 P(p k) 0 2 .0 0 1 .0 S in g le P ul s e

r (t , NO RMAL IZED EFF T ) EC IVE

R JA ( t) = r( ) * RJA t R JA = 135C/W

t1

t2

TJ - TA = P * RJA (t) D u t y C y c l e, D = t1 /t
10 100
2

300

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design.

FDS9933A Rev. C

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Preliminary

First Production

No Identification Needed

Full Production

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. D

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