2SK3569

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)

2SK3569
Switching Regulator Applications
Low drain-source ON-resistance: RDS (ON) = 0.54 (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm

Absolute Maximum Ratings (Ta = 25C)

Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 30 10 40 45 363 10 4.5 150 -55 to 150 A W mJ A mJ C C Unit V V V
1: Gate 2: Drain 3: Source

Pulse (t = 1 ms) (Note 1)

Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range

JEDEC JEITA TOSHIBA

SC-67 2-10U1B

Weight : 1.7 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.78 62.5 Unit C/W C/W 1

Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 90 V, Tch = 25C (initial), L = 6.36 mH, IAR = 10 A, RG = 25 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.
3

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Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 10 A Duty 1%, tw = 10 s Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton 10 V VGS 0V 50 ID = 5 A VOUT VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 5 A VDS = 10 V, ID = 5 A Min 30 600 2.0 2.4 Typ. 0.54 8.5 1500 15 180 22 50 36 180 42 23 19 Max 10 100 4.0 0.75 pF Unit A V A V V S

ns

RL = 40 VDD 200 V

nC

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 10 A, VGS = 0 V IDR = 10 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 1300 16 Max 10 40 1.7 Unit A A V ns C

Marking
Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] K3569
Part No. (or abbreviation code) environmental matters such as the RoHS compatibility of Product. Lot No. Note 4

Please contact your TOSHIBA sales representative for details as to

The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.

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ID VDS
10 COMMON SOURCE Tc = 25C PULSE TEST 10,8 6 5.3 20 10 5.1 5 4.8 6 4.6 4 4.4 2 4.2

ID VDS
8 6 16 5.5 5.25 12 5 8 4.75 4.5 VGS = 4 V 0 0 COMMON SOURCE Tc = 25C PULSE TEST

(A)

DRAIN CURRENT ID

DRAIN CURRENT ID

(A)

VGS = 4V 0 0 2 4 6 8 10 10 20 30

40

50

DRAIN-SOURCE VOLTAGE

VDS

(V)

DRAIN-SOURCE VOLTAGE

VDS

(V)

ID VGS VDS (V)

20 COMMON SOURCE 10

VDS VGS
COMMON SOURCE Tc = 25 8 PULSE TEST

(A)

16

VDS = 20 V PULSE TEST

12

DRAIN-SOURCE VOLTAGE

DRAIN CURRENT ID

ID = 10 A

8 Tc = 55C 4 100 25 0 0 2 4 6 8 10

5 2.5

0 0

12

16

20

GATE-SOURCE VOLTAGE

VGS

(V)

GATE-SOURCE VOLTAGE

VGS

(V)

Yfs ID FORWARD TRANSFER ADMITTANCE Yfs (S)

100 10

RDS (ON) ID DRAIN-SOURCE ON RESISTANCE RDS (ON) ()

COMMON SOURCE Tc = 25C PULSE TEST

10

Tc = 55C 25 100

VGS = 10 V15V

1 COMMON SOURCE VDS = 20 V 0.1 0.1 PULSE TEST 1 10 100

0.1 0.1

10

100

DRAIN CURRENT ID

(A)

DRAIN CURRENT ID

(A)

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RDS (ON) Tc
2.5 100

IDR VDS DRAIN REVERSE CURRENT IDR (A)

COMMON SOURCE Tc = 25C PULSE TEST 10

DRAIN-SOURCE ON RESISTANCE RDS (ON) ( )

COMMON SOURCE PULSE TEST 2.0 ID = 10A 1.5 5A 1.0 VGS = 10 V 0.5 2.5A

1 10 5 3 1 0.1 0 0.2 0.4 0.6 VGS = 0, 1 V 0.8 1.0 1.2

0 80

40

40

80

120

160

CASE TEMPERATURE

Tc

(C)

DRAIN-SOURCE VOLTAGE

VDS

(V)

CAPACITANCE VDS
10000 Ciss 5

Vth Tc

GATE THRESHOLD VOLTAGE Vth (V)

(pF)

1000 Coss 100

CAPACITANCE

2 COMMON SOURCE 1 VDS = 10 V ID = 1 mA PULSE TEST 0 80 40 0 40 80 120 160

Crss 10 COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25C 1 0.1 1 10 100

DRAIN-SOURCE VOLTAGE

VDS

(V)

CASE TEMPERATURE

Tc

(C)

PD Tc VDS (V)
80 500

DYNAMIC INPUT / OUTPUT CHARACTERISTICS (V) GATE-SOURCE VOLTAGE VGS

20

DRAIN POWER DISSIPATION PD (W)

400

VDS

16

60

DRAIN-SOURCE VOLTAGE

300 VDD = 100 V 200 Common source 100 VGS 200 ID = 10 A Tc = 25C Pulse test 0 0 400

12

40

20

0 0

40

80

120

160

200

10

20

30

40

50

0 60

CASE TEMPERATURE

Tc

(C)

TOTAL GATE CHARGE

Qg

(nC)

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rth tw NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c)

10

Duty=0.5 0.2

0.1

0.1 0.05 0.02 PDM t

0.01 0.01 SINGLE PULSE

T Duty = t/T Rth (ch-c) = 2.78C/W 10 100 1 10

0.001 10

100

PULSE WIDTH

tw (s)

SAFE OPERATING AREA

100 ID max (PULSED) * 100 s * ID max (CONTINUOUS) 400 500

EAS Tch

10

AVALANCHE ENERGY EAS (mJ)

(A)

300

DRAIN CURRENT ID

1 ms * DC OPERATION Tc = 25C

200

100

0.1

* SINGLE NONREPETITIVE PULSE

Tc=25 CURVES LINEARLY MUST WITH BE DERATED IN

0 25

50

75

100

125

150

CHANNEL TEMPERATURE (INITIAL) Tch (C)

VDSS max 100 1000

INCREASE

0.01 1

TEMPERATURE.

10

15 V 15 V

BVDSS IAR VDD VDS

DRAIN-SOURCE VOLTAGE

VDS

(V)

TEST CIRCUIT RG = 25 VDD = 90 V, L = 6.36mH

WAVEFORM

AS =

1 B VDSS L I2 B 2 VDSS VDD

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RESTRICTIONS ON PRODUCT USE
Toshiba Corporation, and its subsidiaries and affiliates (collectively TOSHIBA), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively Product) without notice. This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBAs written permission, reproduction is permissible only if reproduction is without alteration/omission. Though TOSHIBA works continually to improve Products quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS PRODUCT DESIGN OR APPLICATIONS. Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (Unintended Use). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations.

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