R07sm0002ej0100 Powermos

2010.
08
Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors

General Presentation
Discrete
www.renesas.com
Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation
August 2010
Renesas Electronics Corporation

Standard product Business Group 8/6/2010 Rev.1.00
2010. Renesas Electronics Corporation. All rights reserved.
Contents
Power MOS FETs
Applications, Development Trends Low-Voltage Power MOS FETs 10th Generation Power MOS FETs (VDSS = 30 V) New Products: 10th Generation + SBD (Single/Dual) Next Generation Products: 11th Generation Power MOS FETs New Products: Middle Voltage (40 V to 100 V) JET-MV Low Qg Series - LFPAK-i Double-Sided Mounting Packages, P-ch. MOS FET Series, and Power-Saving Compact Package Series - Integrated Power Devices: IC and MOS FET - Medium-/High-Voltage Power MOS FETs - IGBTs for Industrial and HA Applications - IGBTs for Strobe Flasher
IGBT
Triacs and Thyristors

: Any page with this marking is a newly added page.
2010. Renesas Electronics Corporation. All rights reserved. Renesas Power MOS FETs, IGBTs, Triacs and Thyristors General Presentation
Power MOS FETs

Applications, Development Trends Low-Voltage Power MOS FETs 10th Generation Power MOS FETs (VDSS = 30 V) New Products: 10th Generation + SBD (Single/Dual) Next Generation Products: 11th Generation Power MOS FETs New Products: Middle Voltage (40 V to 100 V) JET-MV Low Qg Series LFPAK-i Double-Sided Mounting Packages, P-ch. MOS FET Series, and Power-Saving Compact Package Series Integrated Power Devices: IC and MOS FET Medium-/High-Voltage Power MOS FETs
1-1
Power MOS FETs

Applications, Development Trends
1-2
Renesas Power MOS FETs, IGBTs, Triacs and Thyristors General Presentation
Power MOS FET and IGBT Application Map

100
DC-DC-conversion power supplies (synchronous rectifiers) EPS Servers/ routers Desktop PCs VRM Automotive electrical equipment Inverters
Drain current ID (A)
50
ABS
Relays
PDP
Injectors
PFC
20 10 5
Notebook PCs, camcorders, Amusement machines
Solenoid drives
Power supplies for communications equipment
Computer servers, WS
Switching power supplies
Air bags Li-ion batteries Notebook PCs DSCs LBP, HDDs WPAK Driving small motors
Lowvoltage
Industrial equipment AC adapters Monitors and printers
2 1
DC-DC power supplies (primary-side SW) (AC200 to 400 V)

High-voltage
Batteries
Medium voltage
10
20
50
100
200
500
1000
2000
Drainsource voltage VDSS (V)

1-3
Power MOS FET Trend by Applications

Field Applications Technical trend Low power consumption, high brightness Sustained trend for compact modules, bridge method (HIC) Harmonic regulation supported Power-factor correction (PFC) circuit included Soft-switching method (ZVS) Secondary synchronous rectification How the power MOS FET suits the task Medium, high-voltage of 200 to 600 V: Low input capacitance, development of 6th gen. high-voltage series Wafer supply Medium, high-voltage of 250 to 600 V: Low input capacitance, development of 6th gen. high-voltage series Avalanche tolerance guaranteed, built-in high-speed diode (UPS) Ultra-low on-resistance, low Qg, low Qgd, development of 11th gen. low-voltage series Low-voltage of 30 to 100 V Development of 10th gen. power MOS FETs for low/medium voltage of 80 to 100 V, driven by 7 to 10 V. Trench-power MOS FETs for medium voltage of 150 to 250 V, low Ron and low Qdg series. Ultra-low on-resistance, low Qg, low Qgd, development of 10th gen. low-voltage of 30 to 100 V series. Low-voltage of 12 to 30 V, driven by 2.5 to 10 V Ultra-low on-resistance, low Qg, development of 11th gen. low-voltage series Development of Composite and integration (built-in SBD and driver IC circuit) MOS FET (SOP-8, WPAK, QFN56, QFN40) Small, thin, low-resistance, thermal-resistance Package (LFPAK, WPAK) P-ch 8th gen. Ultra-low Ron, two devices in one chip (WPAK) Low-voltage drive: 1.8 to 2.5 V ultra-small and thin Package (CMFPAK-6) Wafer supply Dual-type ultra-small and-thin package (CMFPAK-6)
AV
PDP
Network-related devices, AC-DC power supplies Switching power supplies
Servers, routers, Telecom., 2-device/4-device bridge method communications Isolated Active clamp method type devices, Secondary synchronous rectification DC-DC power supplies Distributed power-supply systems Synchronous rectification converter Multi-phase adopted Small and thin POL (point of load)
Nonisolated type
Batteries
Mobile phones, Notebook PCs, DSCs
Li-ion battery used Highly functional Quick response Small and thin
Increased current capacity
Motor control
Small motors (PPCs, printers, HDDs), inverters, high-functional robots
Small, low power consumption High precision, quick response Low noise Directly driven by microcomputer
Medium, high-voltage: 150 to 600 V, DP-8, development of TO-92M series Development of 8th gen. low-voltage SOP-8 (including 2-device packages) series Built-in high-speed diode Development of 6th gen. high-voltage series
1-4
Power MOS FETs

Low-Voltage Power MOS FETs VDSS = 12 V to 100 V
1-5
Low-Voltage MOS FET Package Trend

Operating Current Iout (A)
VRM12.0 for Servers

30 20
VRM 9.0, 10.0

DPAK D2PAK WPAK
ore CPU C
LFPAK-I
High Frequency and Large Current
QFN56 Multi-chip Module
LFPAK
Core CPU
QFN40
10
SOP-8
Large Current for N/B PC CPU Core
CP U
Co
re
WPAK (Dual)
y or
POL and Brick

High Density Package for N/B PC, POL
2
High
SOP-8
R DD
m Me
+
Low/SBD
N/B PC
f = 100 k 200 k
500 k
1M
2 MHz
High Density and High Frequency

1-6
Roadmap of Power MOS FETs for Highly Efficient Power Supplies

- For Low Loss and More Compact Products High Frequency and High Efficiency
2nd gen. DrMOS Smaller DrMOS Small POL HP DrMOS
High Performance
Driver IC
High-side MOS FET

1st Gen. Package PKG
2nd Gen. Package PKG
1st gen. eq. DrMOS High fr loss low nd

a
loss low and ller ma S
(6 6 mm)
Parasitic Low-side inductance
MOS FET
(IC + drive + MOS)
POL-SiP
JET + SBD WPAK-Dual
gh Hi
nc fu
y lit na io t
QFN56 (8 8 mm)
WPAK (D)
Built-in SBD
FOM High Qg) . (Ron
11th gen.
Com
d p ou n
10th gen.
30 V
30 V
Higher voltage (40 to 100 V)
FOM High Qgd) . (Ron
9th gen.
30 V
LFPAK-i
D8-L 2002
WPAK
30 to 100 V
FOM: Figure of merit
2003
2004
2005
2006 Year
2007
2008
2009
2010
1-7
Roadmap of On-Resistance for Low-Voltage Power MOS FETs

Power MOS FET Technologies and Trend in RDS (on)
RDS (on) typ. [m], VGS = 4.5 V
6
7th gen.
N-ch. MOS FETs, 30-V Low Side
5 4 3 2 1
HAT2099H 5.0 m Crss/Ciss (0.014)
8th gen.
HAT2165H 3.4 m Low Ron Low Crss/Ciss (0.073)
9th gen.
RJK0301DPB 3.0 m Low Ron Low Crss/Ciss (0.044)
10th gen.
RJK0346DPA 1.9 m
11th gen.
RJK03C0DPA 1.7 m
2000
1-8
2002
2004
2006
2008
2010
2012
Recommended Applications of Low-Voltage MOS FETs for Highly Efficient Power Supplies
DC-DC voltage regulators for driving CPUs, GPUs, memory, etc.
Win High Efficiency for Note PC Power Supply New Generation Power MOSFET
Servers, other network, telecommunications, notebook PCs, VGA
RJK0305DPB
Low RDS(on)=10m High Speed Switching(tf=3.0ns) Low Gate Charge(Qg=8nC)
Isolating bus converters in brick casings (primary and secondary sides) Secondary-side synchronous rectifiers for AC-DC power supplies, ORing switches
Servers, routers, telecommunications
Power management switches (Li-ion battery protection for notebook PCs, etc.)
1-9
Sample Application: Secondary-Side Synchronous Rectification and ORing Switch for AC-DC Power Supply
Example: DPS* system for a server
10th gen. (40 to 80 V) 10th and 11th gen. (30 V)

12 V bus
12 V (HDD, fans)
PFC*
AC input
AC-DC DC-DC
SR
Vg1 Vg2
Oring SW
12 V
POL, buck converter POL

5.0 V 2.5 V 1.8 V 1.5 V 1.3 V CPU core 1.3 V
L
Vg3 Vg4
RJK0328DPB RJK0346DPA
(30 V/15-1.6 m)
POL POL POL

VRM*, VRD* VRM*, VRD*
* *
RJK0453DPB (40 V/1.9 m)
Control IC for PFC R2A20112
Vg1 Vg2 Vg3 Vg4
PWM + sync. rect. IC R2A20121
DC 300 to 400 V
*
SR: Synchronous rectifier * DPS: Distributed power supply * PFC: Power factor correction circuit
POL: Point of load VRM: Voltage regulator module * VRD: Voltage regulator down
1-10
Sample Application: Power Voltage Regulator

* *
POL
VIN = 12 V
PWM IC
POL: Point of load VRM: Voltage regulator module * VRD: Voltage regulator down
10th and 11th gen. (30 V)

High side
SBD
VOUT = 1.8 V Memory
Vcc = 5 V
VIN = 12 V
High side L1
MOS driver
Low side
C Low side
VIN = 12 V
ISEN1
POL POL POL POL

VRM , VRD
* *
5.0 V 2.5 V 1.8 V 1.5 V 1.2 V CPU core 1.2 V CPU core
EN
10th gen. + SBD

L2
MOS driver
RJK0379DPA
PWM IC
ISEN2
CPU core
VOUT = 1.2 V lOUT = 120 A
RJK0332DPB
MOS driver
L3 C
RJK0329DPB
ISEN3
DrMOS
VRM*, VRD*
R2J20651NP
MOS driver
L4 C
Buck converter
1-11
VRM and VRD for CPU Core

ISEN4
Sample Application: Isolating Bus Converters in Brick Casings

Full bridge topology
10th gen. (40 to 100 V)

AC input
Primary SW Secondary SR* 80 to 100 V 30 to 60 V
Buck converter
1.8 V
POL
Memory
1.5 V
AC-DC (rectifier)
PFC* DC-DC
Shunt IC
POL VRD
Chipset
1.3 V
CPU core
Full bridge
Sync. rect.
Control IC, R2A20121
3.3- to 12-V bus Power supply system for networks and telecommunications
48-VDC Active clamp topology bus
Buck converter
1.8 V
New product Trench structure (150 to 250 V)

*PFC: Power factor correction Circuit *SR: Synchronous rectifier
1-12
Shunt Reg IC
POL POL
1V
Memory
1.2 V
Chipset CPU core
Control IC
VRD
Primary SW Secondary SR* 30 to 40 V 150 to 200 V
3.3- to 5-V bus
Sample Application: Li-ion Battery for Notebook PC *VR: Voltage regulator

Win High Efficiency for Note PC Power Supply New Generation Power MOSFET
10th and 11th gen. (30 V)

AC adapter charger
Vcc
10th gen.
High side RJK0366DPA Low side RJK0351DPA
11th gen.
RJK03B9DPA RJK0393DPA
Low RDS (on) = 10m High Speed Switching (tf = 3.0 ns) Low Gate Charge (Qg = 8nC)
RJK0305DPB
1.0 to 1.3 V
AC adapter
PWM IC
Li-ion battery
DC-DC converter
Power management switch HAT1128R 2
CPU core
Vcc RJK0366DPA
AFE and MCU
AC adapter RJK0358DPA charger

R2J24020
1.3 V
VGA
1.3 V Dual WPAK
PWM IC
RJK0351DPA Vcc RJK0389DPA
RJK0358DPA
Vb
HAT1128R PWM IC
HAT1054R
10th gen. + SBD 3.3 V/5 A

Memory load
MOS FET Technical trends for battery packs Smaller, lower loss, lower overall costs
Battery pack
10th gen. (30 V)

2.5 V
MPU
PWM IC (Power management control)
Vcc RJK0389DPA
5.0 V/5 A HDD CD-ROM DVD
Technical trends for MOS FETs P-ch. MOS N-ch. MOS
PWM IC
Vcc RJK0389DPA
1.8 V/5 A Logic
Power section of DC-DC converter

1-13
Power MOS FETs

10th Generation Power MOS FETs (VDSS = 30 V)
1-14
Performance of 10th Generation Power MOS FETs (VDSS = 30 V)

Figure of merit: FOM (RonQg) at VGS = 4.5 V
100
Total gate charge Qg (nC)
Lower charge loss
50
RENESAS 10th gen. RENESAS 9th gen. RENESAS 8th gen.

y nc ie ic f ef
9th gen. series 97 m (nC) 20% cut (improved) 10th gen. series 78 m (nC)
20
ig er h
10 1
RDS (on) (VGS = 4.5 V) typ. (m) Lower conduction loss
10
1-15
Features of 10th Gen. Power MOS FETs

30% Cut in RDS (on)
Ultra low RDS (on)
LFPAK WPAK SOP-8
Lower loss leads to less heat generation from the package.
Comparison with 9th generation

Lower Ron: lower voltage for a given current Larger currents are possible.
1.6 m typ. 1.5 m typ. 2.6 m typ.
High
Low on state power loss
efficiency
Saving
Low driver power loss Low switching power loss
energy
27% Cut in Qg
Low Qg
Higher frequency and faster response characteristics for power supplies
30% Cut in Qgd

Low Qgd
Making possible smaller and thinner in size

1-16
Package Structures for the 10th Generation

10th generation series To the 9th generation SOP-8, WPAK (Au-wire) SOP-8, WPAK (AL ribbon) LFPAK (Au Bump)
Lead frame (source, gate)
Au wire Die
Aluminum ribbon bonding
Lead (source, gate)
AL ribbon
Die
Die pad (drain)
Heat sink (drain)
Au bump
Ag paste
Up to 1.0 m
Up to 0.5 m
Resistance of package wires is halved (contributing to lower on-resistance).

1-17
Data from Efficiency Evaluation of 10th Generation Products

VCC VIN Driver IC
High 1 RJK0305DPB (fix) L VOUT DUT Low 1
Renesas discrete evaluation board Ta = 25 C, no air flow L = 0.45 H

Test conditions VIN = 19 V, Vout = 1.2 V VDR = 5 V, fsw = 300 kHz
94 92
Test conditions VIN = 12 V, VOUT = 1.2 V VDR = 5 V, fsw = 500 kHz

94 92 90
10th gen.
Efficiency [%]
2% up 3% up
9t h
8t h
90 88 86 84 82 80 78
RJK0308DPB RJK0328DPB RJK0305DPB RJK0301DPB HAT2168H 1 HAT2165H 1 1 1 1 1
10th gen.
9t h ge n.
n.
Efficiency [%]
88 86 84 82 80 78 76 0 5
RJK0305DPB RJK0328DPB RJK0305DPB RJK0301DPB HAT2168H 1 HAT2165H 1 1 1 1 1
ge n.
ge n.
8th ge
10
15
20
25
30
76
10
15
20
25
30
lout [A]
1-18
lout [A]
Lineup of 10th Generation Products in LFPAK Package for low-side switch and synchronous rectifier
for high-side switch
RDS (on) (m) P-ch (W) 65 60 55 50 45 VGS = 4.5 V typ. 2.1 2.4 2.8 3.5 5.0 max. 2.9 3.4 3.9 4.9 7.0 VGS = 10 V typ. 1.6 1.8 2.1 2.6 3.6 max. 2.1 2.3 2.7 3.4 4.7 8.8 7.3 5.8 4.6 3.0 42 35 27 21 14 Maximum Rating No. Part No. VDSS (V) VGSS (V) ID (A) 60 55 30 +20/-20 V 45 40 35 Qgd (nC) Qg (nC) Schedule ES OK OK OK OK OK MP OK OK OK OK OK
1 2 3 4 5
RJK0328DPB RJK0329DPB RJK0330DPB RJK0331DPB RJK0332DPB
Lineup of 9th Generation Products in LFPAK Package

Maximum Rating No. Part No. VDSS (V) VGSS (V) ID (A) 60 50 30 +16/-12 V 40 35 30 P-ch (W) 65 60 55 50 45 RDS (on) (m) VGS = 4.5 V typ. 3.0 3.5 4.3 5.5 10.0 max. 4.0 4.6 5.6 7.2 13.0 VGS = 10 V typ. 2.3 2.6 3.1 4.0 6.7 max. 2.8 3.1 3.7 4.8 8.0 7.0 6.0 5.2 3.7 1.5 32 28 23 17 8 Qgd (nC) Qg (nC) Schedule ES OK OK OK OK OK MP OK OK OK OK OK
1 2 3 4 5
1-19
RJK0301DPB RJK0302DPB RJK0303DPB RJK0304DPB RJK0305DPB
JET Series WPAK Lineup

JET Series WPAK
Maximum Rating No. Part No. VDSS (V) VGSS (V) ID (A) 65 50 45 40 30 +20/-20 V 35 30 35 30 25 20 P-ch (W) 65 55 50 45 40 25 35 30 30 25
for low-side switch and synchronous rectification for high-side switch

RDS (on) (m) VGS = 4.5 V typ. 1.9 2.5 3.1 4.3 5.4 11.8 7.3 8.9 12.0 16.0 max. 2.7 3.5 4.3 6.0 7.6 16.5 10.5 12.7 16.8 22.4 VGS = 10 V typ. 1.5 1.9 2.4 3.2 4.0 8.2 5.3 6.3 8.5 11.0 max. 2.0 2.5 3.1 4.2 5.2 10.7 7.1 8.4 11.1 14.3 10.5 7.0 5.3 3.7 3.0 1.4 2.2 1.7 1.5 1.3 49 34 25 17 14 6.3 10 7.6 6.8 6.2 Qgd (nC) Qg (nC) Schedule ES OK OK OK OK OK OK OK OK OK OK MP OK OK OK OK OK OK OK OK OK OK
1 2 3 4 5 6 7 8 9 10
RJK0346DPA RJK0348DPA RJK0349DPA RJK0351DPA RJK0353DPA RJK0355DPA RJK0364DPA-02 RJK0365DPA-02 RJK0366DPA RJK0368DPA
Note) The development plan of this series may be changed without notice.
1-20
Lineup of 10th Generation Products in SOP-8 Package

for low-side switch and synchronous rectifier for high-side switch Maximum Rating No. 1 2 3 4 5 6 7 8 9 10 Part No. RJK0348DSP RJK0349DSP RJK0351DSP RJK0352DSP RJK0353DSP RJK0354DSP RJK0355DSP RJK0366DSP RJK0369DSP RJK0371DSP 30 +20/-20 V VDSS (V) VGSS (V) Qgd Qg ID P-ch VGS = 4.5 V VGS = 10 V (nC) (nC) (A) (W) typ. max. typ. max. 22 20 20 18 18 16 12 11 9 8 2.5 2.5 2.5 2.0 2.0 2.0 3.2 3.6 5.0 5.5 5.9 7.5 4.5 5.0 6.9 7.0 8.3 10.5 2.6 2.9 4.0 4.3 4.5 5.4 8.5 9.0 3.4 3.8 5.2 5.6 5.9 7.0 11.1 11.7 7.0 5.3 3.7 3.4 3.0 2.5 1.4 1.5 1.2 1.0 34 25 17 16 15 12 6.0 6.5 5.6 3.8 RDS (on) (m) Schedule ES OK OK OK OK OK OK OK OK OK OK MP OK OK OK OK OK OK OK OK OK OK
1.8 12.0 16.8 2.0 12.5 17.5
1.8 16.0 22.5 12.0 15.6 1.8 19.0 27.0 14.0 19.0
1-21
Power MOS FETs

New Products: 10th Generation + SBD (Single/Dual)
SBD: Shottky barrier diode

1-22
10th Generation MOS FET Plus On-Chip SBD (Single/Dual)

Main Applications
Servers/PCs (CPU/memory) Graphics cards (VGA/MXM) Telecomms (secondary-side synchronous rectification) SBD: Schottky barrier diode
Features (Single)
On-chip SBD between source and drain
Single (WPAK) Dual (WPAK)
- Achieve higher power efficiency Lower VDF loss during dead time - Reduced EMI noise: Lower spike voltage between low-side D and S when high-side switch is turned on
Features (Dual)
Inclusion of 2 switching devices for high and low sides in one package On-chip SBD for low-side switching device
- Reduces PCB footprint by 50%, enabling more compact designs
- Achieve higher power efficiency Lower VDF loss during dead time - Reduced EMI noise: Lower spike voltage between low-side D and S when high-side switch is turned on
1-23
Reduction of Spike Voltages (Comparison of Operating Frequency)

The waveforms in are those when the high-side switching device turned on.
VIN = 12 V, VOUT = 1.2 V, VDR = 5 V, fsw = 300 kHz, L = 0.45 H, lOUT = 25 A High side: RJK0365DPA VG (H)
VGS (L)
Low: RJK0351DPA (without SBD)
Low side: RJK0381DPA (on-chip SBD)
VGS (L)
VG (H) VDS (L)
VGS (L)
80 ns/div
80 ns/div
Vp = 27.2 V
VDS (L) VG (H)
Reduction in low-side spike voltage
Vp = 22.4 V
-17%
Reduced EMI noise
VGS (L) 4 ns/div 4 ns/div
1-24
New Product: 10th Generation in WPAK (Dual)
VCC
VIN
High
L VOUT
L-source
L-gate
Driver IC
Low + SBD
VIN
High + Low + SBD (1 Package)

VIN
H-source L-drain
High-FET
L
Low-FET
GND
SBD
GND
H-drain
H-drain
H-gate
Reduction of PCB mounting area; Back of the package more compact

1-25
Lineup of 10th Generation Power MOS FET Plus On-Chip SBD Products
WPAK Single
Max. ratings No 1 2 3 4 Part No. RJK0379DPA RJK0380DPA RJK03A4DPA RJK0381DPA 30 V +20/-20 VDSS (V) VGSS (V) ID (A) 50 45 42 40 Pch (W) 55 50 45 45 typ. 2.4 3.3 4.3 4.7 RDS (on) (m) VGS = 4.5 V max. 3.4 4.7 6.0 6.6 VGS = 10 V typ. 1.8 2.4 2.9 3.4 max. 2.3 3.2 3.8 4.5 Qgd (nC) 10.7 6.7 5.2 4.3 Qg (nC) 37 24 17 15 Schedule ES OK OK OK OK MP OK OK OK OK
WPAK Dual
Max. ratings No Part No. FET
High Low
RDS (on) (m) Pch (W) 10 10 VGS = 4.5 V typ. 11.8 10.5 max. 16.5 14.7 VGS = 10 V typ. 8.2 6.8 max. 10.7 8.9
VDSS (V) 30
VGSS (V) +20/-20
ID (A) 15 20
Qgd (nC) 1.4 2.2
Qg (nC) 6 7.2
Schedule ES OK MP OK
RJK0389DPA
Attention: This product is under development. The electrical characteristics or schedule may be subject to change without notice.
1-26
Power MOS FETs

Next Generation Products: 11th Generation Power MOS FETs
1-27
Data From Efficiency Evaluation of 11th Generation Products

VCC
VIN
High side 1
L
Driver IC Low side 1
RJK0305DPB VOUT
Renesas discrete evaluation board Ta = 25 C, no air flow L = 0.45 H
93
Efficiency (%)
Test conditions VIN = 12 V, VOUT = 1.2 V VDR = 5 V, fsw = 350 kHz
92 91 90 89 88 87 86 85 84 83 0
10th gen.
Next 11th gen.
High-side: RJK0305DPB, fixed Low-side: 11th generation (RJK03C0DPA) 10th generation (RJK0346DPA)
5 10 15 lout (A) 20 25 30
1% up
1-28
Development Schedule for Next (11th) Generation Products

Package: WPAK
Max. ratings No 1 2 3 4 5 6 7 8 9 Part No. RJK03C0DPA RJK0390DPA RJK0391DPA RJK0392DPA RJK0393DPA RJK0394DPA RJK0395DPA RJK0396DPA RJK0397DPA 30 VDSS (V) VGSS (V)
for low-side switch and synchronous rectification for high-side switch

RDS (on) (m)
VGS = 4.5 V VGS = 10 V Schedule
ID Pch (A) (W) typ. max. typ. max. 70 65 50 45 40 65 60 50 45 40 35 30 28 25 30 28 25 1.8 2.1 2.8 3.4 4.2 5.3 7.6 9.0 2.5 2.9 3.9 4.8 5.9 7.4 10.6 12.6 1.5 1.7 2.2 2.7 3.3 4.1 5.9 6.9 7.8 6.0 7.0 8.3 2.0 2.2 2.9 3.5 4.3 5.3 7.7 9.0 10.1 7.8 9.3 10.6
Qgd Qg (nC) (nC) 13.7 11.3 7.4 5.9 4.7 3.7 2.6 2.2 1.9 2.6 2.2 1.9 66 54 34 26 21 15.5 11.0 9 7.4 11.0 9 7.4
Rg ()
ES MP
Current Products (JET Series) RJK0346DPA RJK0348DPA RJK0349DPA RJK0351DPA RJK0353DPA RJK0364DPA RJK0365DPA RJK0355, 66DPA RJK0368DPA RJK0364DPA RJK0365DPA RJK0355, 66DPA RJK0368DPA
0.75 OK OK 0.8 0.8 1.4 1.4 2.2 2.5 2.5 1.0 1.2 1.2 OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK 0.95 OK OK
35 +20 30 /-20 V 30 30 30 30 30
10.4 14.6 7.7 9.3 10.7 12.9
10 RJK03B7DPA 11 RJK03B8DPA 12 RJK03B9DPA
10.9 15.1
Attention: This product is under development. The electrical characteristics or schedule may be subject to change without notice. 1-29
Power MOS FETs

New Products: Middle Voltage (40 V to 100 V) 10th Generation-MV Low Qg Series
1-30
10th Generation Middle Voltage Series

Target Application
Server (D2D) Telecom (Brick) Isolated DC/DC converter
Isolated DC/DC Converter

Primary: for Switching Secondary: for Synchronous Rectifier
Feature
Lineup Low Qg series: Low SW loss. Various VDSS series VDSS: 40 V, 60 V, 80 V, 100 V Improving FOM Ron Qdg, Ron Qg
DC 48 V
L
Full Bridge Control
Synchronous Rectification MOSFET Control
1-31
Recommended 11th Generation Middle Voltage Series

Circuit Requirement Primary SW and Secondary SR
Drive loss SW loss High noise immunity Low Conduction loss
Device Characteristics
Low Qg
Low Qgd
Low VGS (off)
Low RDS (on)
11th Generation -MV Series
Low Qg series (RJK**54/55/56DPB)

1-32
Low Gate Charge (Qg) 11th Generation Middle Voltage. (VDSS = 100 V)
For Primary SW Figure of Merit: FOM (Ron Qdg) at VDS = 50 V
100 Gate to Drain Charge Qgd (VDS = 50 V) Typ. (nC) 50
Low Charge Loss
D8 180 mnC
20 10 5 2 1 1
50% Down
y nc e ci fi
D8 11th gen. Low Qg
h ig
2
Ef
11th Generation (Low Qg series) 90 mnC
RDS
5 10 20 50 100 (on) (VGS = 10 V) Typ. (m)
Low Condition Loss

1-33
Low Gate Charge (Qg) 11th Generation Middle Voltage. (VDSS = 40 V)

For Secondly SR Figure of Merit: FOM (Ron Qg) at VGS = 10 V
100 Total Gate Charge Qg (VGS = 10 V) Typ. (nC)
Low Charge Loss
50
D8 210 mnC
D8
59% Down
11th Generation (Low Qg series) 85 mnC
20
10 1
h ig
Ef
cy n ie c fi
11th gen. Low Qg

10
RDS
2 5 (on) (VGS = 10 V) Typ. (m)
Low Condition Loss

1-34
MOS FET Recommendation for Next Bricks

Application Bus Converter
VIN = 36 to 75 V VOUT = 12 V
Pout (W)
120 to 240 300 to 700 30 to 90 100 to 200 300 to 500
Topology
Half Bridge Full Bridge Full Bridge
VDSS (V) 100
Primary SW
RJK1056DPB 2 RJK1055DPB 4 RJK1056DPB 4 RJK1056DPB 8 RJK1557DPA 1
VDSS (V) 60 80 60 80 40
Secondary SR
RJK0654DPB 2 RJK0854DPB 2 RJK0656DPB 4 RJK0856DPB 4 RJK0454DPB 2 RJK0455DPB 2 RJK0456DPB 4 RJK1055DPB 4
100
Isolated Converter
VIN = 38 to 55 V VOUT = 3.3 V, 5.5 V
Forward 150 Active Clamp
Half Bridge
80
RJK0856DPB 2
40
PA Converter
VIN = 36 to 75 V VOUT = 28 V
RJK1056DPB 4 Full Bridge 100 RJK1056DPB 8 100
RJK1056DPB 4
Frequency: Forward Active Clamp f = 300 to 500 kHz, Half Bridge f = 250 to 400 kHz, Full Bridge f =150 to 200 kHz Drive Voltage: Primary VGS = 7 to 10 V, Secondary VGS =7 to 8 V
1-35
Low Qg 11th Generation Middle Voltage Series Lineup

- Main application : DC/DC Power Supply and Motor Drive, Battery Power Management etc. - Feature : Low Qg and Qdg (Low Switching loss) High Threshold Voltage (High noise immunity)
LFPAK
Max. ratings Type No. RJK0454DPB RJK0455DPB RJK0456DPB RJK0654DPB RJK0655DPB RJK0656DPB RJK0854DPB RJK0855DPB RJK0856DPB RJK1054DPB RJK1055DPB RJK1056DPB 100 80 60 20 40 VDSS (V) VGSS (V) ID (A) 40 45 50 30 35 40 25 30 35 20 23 25 Pch (W) 55 60 65 55 60 65 55 60 65 55 60 65 VGS (off) [V] min-max 2.0-4.0 2.0-4.0 2.0-4.0 2.0-4.0 2.0-4.0 2.0-4.0 2.0-4.0 2.0-4.0 2.0-4.0 2.0-4.0 2.0-4.0 2.0-4.0 RDS (on) (m) VGS = 10 V typ. 3.9 3.1 2.6 6.5 5.3 4.5 10 8.2 6.9 17 13 11 max. 4.9 3.8 3.2 8.3 6.7 5.6 13 11 8.9 22 17 14 Qdg (nC) 3.2 4.1 4.9 3.3 4.2 5.0 5.0 6.3 7.6 5.1 6.5 7.8 Qg (nC) 22 27 33 22 28 34 30 37 45 30 38 45 Schedule ES OK OK OK OK OK OK OK OK OK OK OK OK MP OK OK OK OK OK OK OK OK OK OK OK OK VGS = 10 V
Note) The development plan and the characteristics of this series may be changed without notice.
1-36
Power MOS FETs

LFPAK-i Double-Sided Mounting Packages, P-ch. MOS FET Series, and Power-Saving Compact Package Series
1-37
LFPAK and LFPAK-i (SOP-8) Comparison of Package Dimensions

LFPAK
5.3 MAX. D 0.25 D D
LFPAK-i
5.3 MAX. D D 0.25 D
SOP-8
5.0 MAX. D D D 0.25 MAX.
3.95 MAX.
6.2 MAX.
4.0 MAX. S S S G 1.27 0.51 MAX.
6.1
TOP MARK
3.9
BOTTOM
TOP MARK
BOTTOM
1.1 MAX.
G 1.1MAX.
0.2 Palladium Plating
0.2
Solder Plating
Palladium Plating
0.4
1.27
D: Drain S: Source G: Gate
0.4
1.27
D: Drain S: Source G: Gate
1.75 MAX. D: Drain S: Source G: Gate
UNIT: mm
1-38
6.2 MAX.
LFPAK-i Package Power MOS FET Series

G D D D S S S
- Features 40% of mounting thermal resistance is reduced and 30% of current improvement is realized SOP-8 and LFPAK of substitutions Top side cooling capability
- Application Server of VR (Voltage Regulator) VR of High-side to HAT2168N Low-side to HAT2165N/HAT2166N

D D D
S S S
- Comparisons Between LFPAK and LFPAK-i Rth 100 LFPAK LFPAK 40 40 1.6 mm PCB Board Top Double Heat Sink Radiation ch-f2 LFPAK-i
Without Air Flow With Air Flow
- Package Dimension D D D D
Thermal Resistance Rth (degC/W)
Used Al Heat Sink
10
(25 16 6 mml) TOP MARK
BOTTOM
LFPAK-i 40 40 1.6 mm PCB Board Top Double Heat Sink Radiation ch-f2 1 10 100 1000
Lower PCB temperature is achieved by using heat sink with air flow. S S S G
P/N: HAT2099H and HAT2165H

0.1 0.001 0.01 0.1
Can reduce the conduction loss for the MOS FET.
5.3 max.
UNIT: mm
Pulse Width PW (s)
- Lineup Part No. HAT2165N HAT2166N HAT2168N HAT2172N HAT2173N HAT2174N HAT2175N Ratings ID VDSS (V) (A) 30 55 30 45 30 30 40 30 100 25 100 20 100 15 VGS = typ. 3.7 4.3 9.1 (6.9) [13.3] [22] [34] RDS (on) 4.5 V* max. 5.6 6.4 13.8 (9.5) [17.8] [30] [46] (m) VGS = 10 V typ. max. 2.8 3.6 3.2 4.1 6.3 8.2 6.1 7.8 12.3 15.3 21 27 33 42 Qg typ. (nC) 33 27 11 32 61 33.5 21 Qgd typ. (nC) 7.1 5.9 2.4 4 14.5 8.4 4.5
*[ ]: VGS = 8 V Schedule WS OK OK OK OK OK OK OK MP OK OK OK OK OK OK OK
Top Side Cooling Capability
Heat Sink
Die LFPAK-i
PCB Board
1-39
3.95 max. 6.2 max.
P-channel MOS FET Series

Feature : Super-Low RDS (on) HAT1125H RDS (on) = 2.7 m Application : Li-ion Battery Protect Circuit Load SW, Charger for Note-Book PC
VDSS (V) VGSS (V) ID (A) -45 -40 -16 -30 +10/-20 -12 -10 WPAK -35
4.5 V RDS (on) 10 V RDS (on)
No.
Part No.
Package LFPAK
typ. (m) 4.1 6.0 7.2 14.0 19.0 6.8
max. (m) 5.9 8.6 10.5 22.0 28.0 10.0
typ. (m) 2.7 3.6 5.2 9.5 12.5 4.8
max. (m) 3.6 4.5 6.5 12.0 15.5 5.9
Qg (nC) 165 125 48 22 17 48
Qgd (nC) 40 28 20 10 5.5 20
Schedule WS OK OK OK OK OK OK MP OK OK OK OK OK OK
1 2 3 4 5 6
HAT1125H HAT1127H RJJ0315DSP RJJ0318DSP RJJ0319DSP RJJ0315DPA
SOP-8
1-40
Next Generation Compact Low-Loss Power MOS FET CMFPAK-6 Series

Renesas power MOS FET series in a small package can realize smaller and lighter mobile devices Power MOS FET incorporated in CMFPAK-6 Gate driving voltage: 1.8 to 2.5 V P-ch/N-ch products using D8 process Suitable for step-up/down DC-DC converters for mobile devices (small set) and power management Main applications - Digital still cameras - Mobile phones - PDAs, etc.
Mobile devices: DC-DC converter (step-down voltage)
Power management 5V DC-DC converter 3V
Various blocks Controllertype CTL signal DC-DC controller
Product Lineup
Polarity Part No. HAT1069C HAT1093C HAT1094C HAT1095C RJJ0102DQM HAT1090C HAT1089C HAT1091C HAT1096C HAT1108C HAT1142C HAT1111C HAT1141C HAT2204C HAT2205C HAT2206C HAT2202C HAT2196C HAT2203C HAT2207C RJK0320DQM HAT2268C HAT2221C HAT2240C HAT2281C HAT2282C HAT2217C Drive Voltage (V) Maximum Ratings VDSS (V) VGSS (V) ID (A)
Note 1: Numbers in RDS (on) are indicated as typ./max. Note 2: Please contact our sales department for delivery date.
1.8
12
2.5
20
30 4.5 60 80 12
0.2
1.8
2.5 2.5 4.5 2.5 4.5
20 30 30
60
4.0 3.0 8 2.5 2.0 1.2 2.5 2.0 12 1.5 1.0 1.5 3.0 +20/10 2.0 0.8 3.5 8 3 2 3 2.5 12 2 1.5 4.0 12 4.0 +20/10 1.5 2.5 12 2.0 1.5 +20/10 3.0
Electrical Characteristics RDS(on) RDS(on) RDS(on) RDS(on) (m) (m) (m) (m) at 10 V at 4.5 V at 2.5 V at 1.8 V 38/52 48/70 60/93 41/54 54/76 85/128 67/88 90/126 128/192 108/140 146/205 225/337 265/315 400/535 625/930 50/65 74/104 79/103 120/168 134/175 205/287 225/293 380/530 155/194 245/356 50/63 75/109 245/307 310/450 800/1050 1020/1380 26/34 34/44 45/69 38/50 48/67 65/97 65/85 81/114 113/170 31/40 43/55 45/58 66/93 69/90 107/150 100/130 140/210 30/39 40/58 27/34 37/54 120/150 160/235 75/98 85/119 120/156 140/196 195/254 240/336 105/132 126/183
Schedule
Micro FET
Ciss Marking SPL MP (pF) 1380 940 530 290 123 590 365 200 155 160 505 290 170 770 430 260 520 270 165 135 510 440 110 590 350 210 275 VYVMVNVPTBD VJVKVLVQVZTBD UAUMVUVVVWVRVSVTVXTBD UNUCUKUHUJUB-
Mobile devices: DC-DC converter (step-up voltage)

Power management 3V 5V
OK OK
Various blocks
OK OK
Controllertype CTL signal
Micro FET
DC-DC controller
DC-DC converter
OK OK
Package dimension of CMFPAK-6

OK OK
2.0 0.1 0.2 +0.1 -0.05
Size Package type TSOP-6
Height
2.1 0.05
OK OK OK OK OK OK OK OK OK OK
1.7 0.1
Mounting Package area Ratio (mm) Ratio (mm)
9.3 8.7 7.6 4.5
1.00 0.94 0.82
1.10 1.35 1.12
1.00 1.23 1.02
0.2
0.65 0.65 1.3 0.1
MPAK (SC-59)
0.75 0.05
SOT-23 CMFPAK-6
0.49 0.80 0.73
1-41
CMFPAK-6 Dual Type Power MOS FET

Features
- Dual (N-ch Dual, P-ch Dual, N-ch + P-ch) - Low-voltage drive (1.8 V, 2.5 V) - Small package (CMFPAK-6) - High speed switching - DC-DC converter - Motor drive - Power Management switch
Maximum Ratings VDSS (V) -12 -20 12 20 60 12 -12 20 -20 VGSS (V) 8 12 8 12 8 12 ID (A) -1.2 -1.0 1.8 1.5 0.9 1.8 -1.2 1.5 -1.0
Package dimension
0.2 2.0
Pin Arrangement
D1 G2 S2
0.1
+0.1 0.2 - 0.05
0.05
2.1
Applications
1.7 0.1
S1 0.2 0.65 0.65 1.3
G1
D2
Lineup
Polarity P-ch (Dual) N-ch (Dual) Part No HAT1146C HAT1147C HAT2291C HAT2292C HAT2286C HAT3042C N-ch + P-ch HAT3043C 2.5 Drive voltage (V) 1.8 2.5 1.8 2.5 1.8 Electrical characteristics RDS (on) (m) (typ./max.) VGS = 4.5 V VGS = 2.5 V VGS = 1.8 V 265/330 400/565 625/1130 340/440 575/960 150/200 200/290 265/440 165/215 255/370 460/595 560/770 150/200 200/290 265/440 265/330 400/565 625/1130 165/215 255/370 340/440 575/960 -
0.750.05
0.1
S1: Source (MOS1) G1: Gate (MOS1) D2: Drain (MOS2) S2: Source (MOS2) G2: Gate (MOS2) D1: Drain (MOS2)
Ciss (pF) 125 85 100 73 80 100 125 73 85
Schedule SPL OK OK MP OK OK
OK
OK
1-42
Power MOS FETs

Integrated Power Devices: IC and MOS FET
Driver IC and MOS FET integrated in SiP: DrMOS PWM controller and MOS FET integrated in SiP: POL-SiP
1-43
Product Family: IC and MOS FET Integrated in SiP

DrMOS: Driver IC and MOS FETs
TopMOS FET 3.3 V PWM, lo = 40 A R2J20604NP 5 V PWM, lo = 40 A R2J20602NP 5 V PWM, lo = 35 A R2J20601NP (to be discontinued) 6 6 mm QFN, lo = 40 A R2J20651NP
Next gen. DrMOS
Driver IC
BottomMOS FET
POL-SiP: Control IC and MOS FETs

Control IC
TopMOS FET
Next gen. POL-SiP

R2J20702NP high power efficiency and Low loss , lo = 40 A
BottomMOS FET
Peak current mode, lo = 35 A R2J20701NP (to be discontinued)
1-44
DrMOS (R2J20602NP) (1)

Driver IC, MOS FET 2 Incorporated in a single package
Sample configuration: Multiphase power supply Compact/space saving Large current/ High power efficiency Simple design
Driver
Controller
Driver
1-45
56-pin QFN 8 8 mm

Compact package: QFN saves space.
Configuration of discrete device Mounting area = 150 mm2 Configuration of DrMOS Mounting area = 64 mm2
SOP-8 Driver
In mounting area
LFPAK H-side MOS LFPAK L-side MOS
43% cut
8 mm
DrMOS
8 mm
1-46

Package with wireless structure contributes to better performance.
94 92 10
Test conditions VIN = 12 V, VOUT = 1.3 V, fsw = 600 kHz, No Airflow
DrMOS loss (W)
Efficiency (%)
90 88 86 84 82 80 0 5 10 15 20 25 30 35
R2J20602NP (2nd gen.) R2J20601NP (1st gen.)
-2.9 W
R2J20602NP (2nd gen.) R2J20601NP (1st gen.)
+4.4 %
0 0 5 10 15 20 25 30 35
Output current (A)

1-47
Output current (A)

DrMOS (R2J20604NP)
3.3-V PWM input covers a wealth of applications.
Available in combination with various control ICs.
5 V/3.3 0V
PWM Control IC PWM input level
Digital 3.3 V PWM controller Analog 5.0 V PWM controller Analog 3.3 V PWM controller
VH-PWM 2.1 V (typ.) VL-PWM 1.2 V (typ.)
1-48

40-pin QFN (6 6) saves more space.
R2J20602NP Mounting area = 64 mm2 Configuration of DrMOS Mounting area = 36 mm2
56-pin QFN (8 8 mm)
44% cut in mounting area
40-pin QFN (6 6 mm)
1-49

Low loss and high power efficiency keeps heat generation down.
100 120 Surface temperature (C) fsw = 500 kHz fsw = 750 kHz fsw = 1 MHz 80
Test conditions VIN = 5 V, VOUT = 1.8 V, no air flow, no heat sink
Max. power efficiency: 96%
96 Efficiency (%)
100
92 fsw = 500 kHz fsw = 750 kHz 84 fsw = 1 MHz
88
60
40 20 0
800
10
15
20
25
30
10
15
20
25
30
Output current (A)

1-50
Output current (A)


Sample system configuration: DC-DC power supply for DDR RAM
5-V input voltage
Input voltage for driver IC (VCIN) Input voltage for power MOS FET (VIN)
Switch control signal (PWM) Over-temperature alert signal (THWN) Signal to halt synchronous rectification (LSDBL#)
Driver IC
Gete-driving logic circuit Temperature sensing circuit Power MOS FET for switching
PWM control IC
1.8 V
DDR memory
Circuit to halt power MOS FET for Synchronous rectification
Power MOS FET for synchronous rectification
R2J20651NP
1-51
POL-SiP (R2J20702NP) (1)

PWM IC, MOS FET 2 Incorporated in a single package
Fully compatible with R2J20701NP pin assignment
TOP MOS FET
Compact/space saving
(compared to discrete devices)
57% cut in mounting area
PWM control
Large current/ High power efficiency

56-pin QFN 8 8 mm
High response speed Multi-functionality
Bottom MOS FET + SBD

1-52

Low loss and high power efficiency keeps heat generation down.
Test conditions VIN = 12 V, VOUT = 1.8 V, fsw = 500 kHz, L = 0.32 H, COUT = 600 F, no air flow
Evaluation data Efficiency + Package Surface Temperature

95 94 93 Efficiency (%) 92 91 90 89 88 87 86 85 0 5 10 15 20 25 30 35 40 Output Current (A) R2J20702NP R2J20701NP Package Surface Temperature (c) 120 110 100 90 80 70 60 50 40 30 20 0 5 10 15
R2J20702NP R2J20701NP 20 25 30 35 40
Output Current (A)
1-53

Availability of various styles of parellel driving simplifies design.
2-phase operation
Large-current driving (80 A) Current sharing Automatic phase shifting by 180
Multi-channel operation
Parallel synchronous behavior Various kinds of tracking start are available.
Ratiometric
Vo VOUT1
Coincident
Vo VOUT1
Sequential
Vo VOUT1
VOUT2
VOUT2
VOUT2
1-54
Power MOS FETs

Medium-/High-Voltage Power MOS FETs VDSS = 150 V to 600 V
1-55
Roadmap of Medium-/High-Voltage Power MOS FETs

VDSS = 150 to 600 V
Planar technology G Trench technology S
Pn
+
RJK Series
Trench technology Low Ron series and low Qg 150/200/250 V and Qgd series
D8H
N N+
Better performance
+ P N
N-
RJK Series
C Optimized chip design
Next gen
600 V
H5N Series
Planar technology
Advanced
AP5H
600 V
150 to 600 V
AP5H
2002
2004
2006
2008
2010
1-56
Features of Medium-, High-Voltage Power MOS FETs

Lineup of ultra-low on-resistance, large-current products
- RJK2511DPK: 250 V, 65 A, 34 m, TO-3P - RJK4018DPK: 400 V, 43 A, 100 m, TO-3P - RJK5020DPK: 500 V, 40 A, 115 m, TO-3P - RJK6020DPK: 600 V, 32 A, 175 m, TO-3P
Low gate charge (low Qg) Avalanche tolerance guaranteed Built-in diode with high breakdown-tolerance
1-57
New Products: 8th Generation Trench-type (150 V- 250 V)

Low on-state resistance
Package WPAK Part No. RJK1555DPA RJK2055DPA RJK2555DPA
Low on-state resistance series

VDSS [V] 150 200 250 ID [A] 25 20 17 RDS (on) Max. [] 0.048 0.069 0.104 Ciss Typ. [pF] 2400 2400 2400 Qg Typ. [nC] 38 38 39 Qgd Typ. [nC] 10.2 9.0 10.5 Schedule ES MP OK OK OK OK OK OK
High speed switching

Package WPAK Part No. RJK1557DPA RJK2057DPA RJK2557DPA
Low-Capacitance series
VDSS [V] 150 200 250 ID [A] 25 20 17 RDS (on) Max. [] 0.058 0.085 0.128 Ciss Typ. [pF] 1250 1250 1250 Qg Typ. [nC] 20 19 20 Qgd Typ. [nC] 5 5.3 5.9 Schedule ES MP OK OK OK OK OK OK
Recommended application: primary-side switches of isolating brick converter

Primary SW Synchronous rectifier
VOUT
Primary SW DC = 32 V to 75 V
Synchronous rectifier
VOUT
Shunt Reg. IC
Shunt Reg. IC
70 to 100 W
50 to 90 W Control IC
Control IC
150 V 30 to 100 V 10th Gen.
30 to 100 V 10th Gen. 200 to 250 V
Active clamp circuit

1-58
Single-ended forward converter circuit

Lineup of 150- to 600-V Power MOS FETs (Compact Packages for Surface Mounting)
Package TO-92 Part No.
2SK4151 2SK4150 HS54097 HS54095 RJK1562DJE 2SK4093 RJK6011DJE RJK6022DJE HS56021 RJK4006DPD RJK5030DPD RJK5006DPD RJK6023DPD RJK6024DPD RJK6025DPD RJK6002DPD RJK6006DPD RJK2006DPE RJK4012DPE RJK4013DPE RJK4512DPE RJK4513DPE RJK5026DPE RJK5012DPE RJK5013DPE RJK6024DPE RJK6025DPE RJK6026DPE RJK6012DPE RJK6013DPE
VDSS [V]
150 250 600 600 150 250 600 600 600 400 500 500 600 600 600 600 600 200 400 400 450 450 500 500 500 600 600 600 600 600
ID [A]
1 0.4 0.15 0.2 1 1 0.1 0.2 0.2 8 5 7 0.15 0.4 0.8 2 5 40 15 17 14 16 6 12 14 0.4 0.8 5 10 11
RDS (on) Max. []

1.95 5.7 25 16.5 1.4 2.6 52 15 15 0.8 1.6 1.3 25 42 20 6.8 1.9 0.059 0.41 0.3 0.51 0.38 1.75 0.62 0.465 42 20 2.4 0.92 0.7
Ciss [pF]
98 80 50 66 300 140 25 84 84 650 550 650 240 37.5 71.5 160 650 1800 1120 1470 1100 1440 450 1100 1470 37.5 71.5 440 1100 1470
Schedule WS
Available Available Available Available Available -
MP
Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available
TO-92MOD
MP-3A (SMD)
LDPAK-S (SMD)
TP-92
TP-92MOD
MP-3A
LDPAK-S
1-59
Lineup of 400- to 600-V Power MOS FETs (3-Pin Through-Hole Packages)

Package Part No. RJK4006DPP RJK4007DPP RJK5012DPP RJK5013DPP RJK5014DPP RJK5009DPP RJK6026DPP RJK6012DPP RJK6013DPP RJK6014DPP RJK4002DPP-M0 RJK5026DPP-M0 RJK2508DPK RJK2511DPK RJK4014DPK RJK4015DPK RJK4018DPK RJK4514DPK RJK4515DPK RJK4518DPK RJK5013DPK RJK5014DPK RJK5015DPK RJK5018DPK RJK5020DPK RJK6014DPK RJK6015DPK RJK6018DPK RJK6020DPK RJK2009DPM RJK5015DPM RJK6015DPM VDSS [V] 400 400 500 500 500 500 600 600 600 600 400 500 250 250 400 400 400 450 450 450 500 500 500 500 500 600 600 600 600 200 500 500 ID [A] 8 7.6 12 14 19 20 5 10 11 16 3 6 50 65 24 30 43 22 27 39 14 19 25 35 40 16 21 30 32 40 25 21 RDS(on) Max. [] 0.8 0.55 0.62 0.465 0.38 0.3 2.4 0.92 0.7 0.575 2.9 1.75 0.064 0.034 0.24 0.165 0.1 0.3 0.2 0.13 0.465 0.38 0.24 0.155 0.118 0.575 0.36 0.235 0.175 0.036 0.24 0.36 Ciss [pF] 650 850 1100 1470 1800 2600 440 1100 1470 1800 160 450 2600 4900 1820 2600 4100 1820 2600 4100 1470 1800 2600 4100 5150 1800 2600 4100 5150 2900 2600 2600 Schedule WS MP Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available
TO-220FN (full mold)
TO-220FL (full mold)
TO-220FN TO-220FL
TO-3P
TO-3PFM
TO-3PFM (Full mold) 1-60
TO-3P
Lineup of 250- to 600-V Power MOS FET Products Incorporation High-Speed Diodes
Package Part No.
H5N2522FN H5N2512FN H5N3007FN RJL5012DPP RJL5013DPP RJL5014DPP RJL6012DPP RJL6013DPP RJL6014DPP H5N2522LS RJL5012DPE RJL5013DPE RJL6012DPE RJL6013DPE H5N2507P H5N3008P RJL5014DPK RJL5020DPK RJL6020DPK
VDSS [V]
250 250 300 500 500 500 600 600 600 250 500 500 600 600 250 300 500 500 600
ID [A]
12 18 15 12 14 19 10 11 15 12 12 14 10 11 50 40 19 38 30
RDS(on) Max. []
0.21 0.105 0.16 0.7 0.51 0.4 1.1 0.81 0.635 0.21 0.7 0.51 1.1 0.81 0.055 0.069 0.4 0.14 0.21
Ciss [pF]
1300 2200 2180 1050 1400 1680 1050 1400 1680 1300 1050 1400 1050 1400 5000 5150 1680 4750 4750
WS
-
Schedule MP
Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available
TO-220FN (full mold)
LDPAK-S (SMD)
TO-3P
TO-220CFM
TO-220FN
TO-3P
1-61
IGBT
IGBTs for Industrial and HA Applications IGBTs for Strobe Flash
2-1
IGBT
IGBTs for Industrial and HA Applications
2-2
IGBT Road Map
High Performance
G5H
VGE = 30 V
Trench VGE = 30 V 600 V
600 V/1200 V
Next
G6H
G4S
High speed
Trench
600 V
Planer
G5
600 V/1200 V
G4
2004
2005
2006
2007
Year
2008
2009
2010
2011
2-3
IGBTs for Cook Top

Features and Merits Best support for miniaturization and high efficiency
Circuit current synchronous resonance circuit Family Low VCE (sat) High Speed type Part No. RJH60F4DPK Feature Low saturation voltage High speed switching (90 ns) typ. Small package (TO-3P) Merit For high output, Low ON loss For high frequency, Low switching loss Miniaturization
Circuit Examples (Half-bridge current synchronous resonance circuit)

IH: Induction Heating A method of pot heating by using electromagnetic induction, spiral current generate at the bottom of pot on heater.
PFC circuit
Inverter circuit
Package
TO-3P 2-4
Low VCE (sat) High Speed IGBT Lineup

Features
600 V class products with Thin wafer and Trench technology Low Collector to Emitter saturation voltage VCE (sat) Pb free (Lead dip and Chip bonding)
P/N VCES IC VCE (sat) [V] [A] Typ. [V] 600 600 600 600 600 600 40 50 60 80 85 90 1.40 1.40 1.40 1.37 1.35 1.35 tf Typ. [ns] 90 90 80 80 95 95 Diode VF typ. (V) trr typ. (ns) 1.6 140 1.6 140 1.6 140 140 1.6 1.6 140 1.6 140 Package TO-3P TO-3P TO-3P TO-3P TO-3P TO-3P
Development schedule plan
RJH60F3DPK RJH60F0DPK RJH60F4DPK RJH60F5DPK RJH60F6DPK RJH60F7ADPK
Conditions IC = 20 A IC = 25 A IC = 30 A IC = 40 A IC = 45 A IC = 50 A
WS OK OK OK OK OK OK
MP OK OK OK OK 10/4Q OK
TO-3P
2-5
IGBTs for Motor Control and Inverter Units
Device
Features Low VCE (sat) (1.6 V) typ.
Merit Making to high power Miniaturization High reliability
High Short circuit capability IGBT
Fast recovery diode (100 ns) typ. Short circuit capability 5 s min.
PFC circuit
Applications Air conditioner, Refrigerator, Washing machine Photovoltaic generation, UPS, Machine tool, Fan control, and general-purpose inverter unit etc.
Circuit example of Motor control
2-6
High Short Circuit Capability IGBT Lineup

[tsc] Test condition: VCE = 400 V, VGE = 15 V/Tc = 100C
IGBT RJH60C9DPD RJH60D1DPP RJH60D1DPE RJH60D2DPP RJH60D2DPE RJH60D3DPP RJH60D3DPE RJH60D0DPK RJH60D5DPK RJH60D6DPK RJH60D7DPK
VCES (V)
600 600 600 600 600 600 600 600 600 600 600
(25C/100C)
IC (A)
VCE (sat) (V)

typ. (1.9) (1.6) (1.6) (1.6) (1.6) (1.6) (1.6) (1.6) (1.6) (1.6) (1.6) IC (A) 5 8 8 10 10 15 15 20 30 40 50 VGE (V) 15 15 15 15 15 15 15 15 15 15 15 typ.
tf (ns)
IC (A) 5 8 8 10 10 15 15 20 30 40 50 VCE (V) 300 300 300 300 300 300 300 300 300 300 300
tsc (s) min.

(5) (5) (5) (5) (5) (5) (5) (5) (5) (5) (5)
Built-in FRD
Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes
Status Package
MP-3A TO-220FL LDPAK (S) TO-220FL LDPAK (S) TO-220FL LDPAK (S) TO-3P TO-3P TO-3P TO-3P
WS
OK OK OK OK OK OK OK OK OK OK OK
MP
10/3Q 10/3Q 10/3Q 10/3Q 10/3Q 10/3Q 10/3Q 10/3Q 10/3Q 10/3Q 10/3Q
(10)/(5) (16)/(8) (16)/(8) (20)/(10) (20)/(10) (30)/(15) (30)/(15) (40)/(20) (60)/(30) (80)/(40) (90)/(50)
(100) (100) (100) (100) (100) (100) (100) (100) (100) (100) (100)
Applications Solar photovoltaic system, air-conditioning, refrigerator, washing machine, UPS, Eco Cute and other.
MP-3A TO-220FL
LDPAK-S TO-3P
2-7
IGBT
IGBTs for Strobe Flash
2-8
Development Roadmap of IGBT for Strobe Use

RJP4010AGE
3.0 to 6.0 V Driver 150 A IC Package TSOJ-8
RJP4004ANS
2.5 V Driver 200 A IC Package VSON-8
RJP4006AGE
2.7 to 6.0 V Driver 120 A IC Package TSOJ-8
er Larg nt re Cu r
CY25CAH-8F
Smaller
nd all a Sm hin t Flixible

RJP4007ANS
2.5 to 6.0 V Driver 150 A IC Package VSON-8
RJP4002ANS
RJP4009ANS
Performance
CY25BAH-8F
2.5 V Driver 150 A IC Package TSSIO-8
2.5 to 6.0 V Driver 150 A IC Package VSON-8
ller Sm a
lt a g -vo Low rive d
tNex tion era Gen
CY25CAJ-8F
RJP4003ANS
Driver 4.0 V IC 150 A Package VSON-8
CY25BAJ-8F
4.0 V Driver 150 A IC Package TSSOP
CY25AAJ-8F
4.0 V Driver 150 A IC Package SOP-8
ller Sm a
tNex tion era Gen

2.5 V drive
ller Sm a
q High-
uality
4.0 V drive
00
2-9
02
04
06
08
10
New Products of IGBT for Strobe

Part No.
1. VSON-8 package: RJP4009ANS
6.4 mm 3.0 mm 3.0 mm
2. TSOJ-8 package: RJP4010AGE
3.0 mm 4.8 mm 2.85 mm
Features
1. Ultra small package (TSOJ-8: size: 3.05 2.85 mm) 2. Flexible free (2.5 V (2.7 V) to 6.0 V) 3. High ESD capability (built-in gate zener diode) 4. Completed Pb Free and Halogen Free
TSSOP8
VSON8
New package TSOJ-8
Lineups Part No. RJP4010AGE RJP4009ANS VCES [V] 400 400 ICP [A] 150 150 Drive [V] 3.0 to 6.0 V 2.5 to 6.0 V Package TSOJ-8 VSON-8 Schedule WS OK OK CS '10/3Q '10/3Q MP '10/4Q '10/4Q
2-10
Lineup of Renesas IGBT for Strobe Use

Maximum ratings Part No. CY20AAJ-8H
(Note)
VCES [V] 400 400 400 400 400 400 400
ICP [A] 130 200 300 120 150 150 150
Drive [V] 4.0 30.0 12.0 2.7-6.0 2.5-6.0 3.0-6.0 2.5-6.0
Package SOP-8 TO-220FN TO-220FN TSOJ-8 VSON-8 VSON-8 TSOJ-8
RJP4301APP* (Note) RJP5001APP* (Note) RJP4006AGE RJP4007ANS RJP4009ANS* RJP4010AGE*

*: Under development (Note): High frequency type
2-11
Triacs and Thyristors
3-1
Examples of Thyristor and Triac Applications

Triacs Control Alternate current
Heaters and Lamp Solenoid Valve Motor Others
Thyristors
Control rectifier Control capacitor
Electric Fan Electric Pot Washing machine SMPS (rush current protection)
Bike (regulator)
Fan heater (igniter)
Boat Jet ski (igniter)
Rice cooker Vacuum machine Inverter Lighting (rush current prevention circuit) Leakage detector
Printer, Copier, Fax Toilet seat Lamp

3-2
Electric tool
Dishwasher/dryer
Solid state relay

Camera (strobe)
Features of Renesas Thyristors and Triacs

Development of guaranteed products against 150C junction temperature (600 V/700 V/800 V)
- LB/LC/LD/LG Series - Planar structure
Abundant lineups of products

- TO-220 full-mold type, UL certified - TO-3P full-mold type, for products requiring large current - Variety of lead-forming packages
Product development optimized for applications

- For applications for low-rush current LC and LD Series, etc. - Applications for high reliability/long-life operation Al Ribbon
Development of high-voltage products

- 700 V, 800 V, 1000 V, 1500 V
3-3
Roadmap of Triac/Thyristor
General Planar Al Ribbon 600 to 700 V (Tj = 150 C)
High Commutation
Planar 4 to 16 A 800 V (Tj = 150 C)
General
General Planar LG series o 600 to 800 V hv Hig /High ure (Tj = 150 C) t era mp Te Low Inrush Planar LD series For low inrush 600 to 700 V current (Tj = 150 C)
e ltag
Performance
Planar LB series 600 V (Tj = 150 C)
General n tio h Under Planar Hig muta Development m h High Power Co Hig er w 400 to 1500 V Po to 30 A (Tj = 125/150 C) General and
Low Inrush
Guarantee 150 C
General Planar LA series 600 to 1000 V (Tj = 125 C)
New package TO-220FL
Planar 600 to 700 V to 20 A (Tj = 150 C)

New type
General
C 15 0 ntee a Guar
General General Glass Passivation (Tj = 125 C)
Planar technology (Tj = 150 C)
Under Development
High
ility reliab
Planar technology (Tj = 125 C)
Triac Thyristor
'00
3-4
'02
'04
'06
'08
'10
Triacs for General-Purpose, LG Series

Applications Control of heaters and motors used for laundry machines, vacuum cleaners, rice cookers, etc Features
1) 2) 3) 4) 5) High reliability: Adoption of planar structure Insulation-type outline: TO-220F, dielectric strength of 2000 V, UL certified High-withstand voltage: 600 V, 700 V, 800 V High temperature guaranteed: 150 C assured Products in lead-forming package available
Part No. BCR3PM-12LG BCR5PM-12LG BCR8PM-12LG BCR10PM-12LG BCR12PM-12LG BCR16PM-12LG BCR3PM-14LG BCR5PM-14LG BCR8PM-14LG BCR12PM-14LG BCR16PM-14LG BCR8PM-16LG
3-5
Product List
VDRMS [V] ITRMS [A] 3 5 8 10 12 16 3 5 8 12 16 8 ITSM [A] 30 50 80 100 120 160 30 50 80 120 160 80 IGT (max.) [mA] 20 20 30 30 30 30 20 30 30 30 30 30 Status CS OK OK OK OK OK OK OK OK OK OK OK OK MP OK OK OK OK OK OK OK OK OK OK OK OK Note Support VDRMS = 800 V (@Tj = 125C)
600
700
800
Triacs for Low Inrush Current, LD Series

Application example Low inrush current application such as ceramic heater Features 1) High Reliability: Planar technology 2) Isolated Package: TO-220 Full mold (UL recognized) 3) High Temp. : 150 C guarantee 4) High noise immunity: IGT 50 mA 5) Lead Forming is available Lineup
Part No. BCR8LM-12LD BCR10LM-12LD BCR12LM-12LD BCR16LM-12LD BCR8PM-12LD BCR10PM-12LD BCR12PM-12LD BCR16PM-12LD BCR5LM-14LD BCR8LM-14LD BCR12LM-14LD BCR5PM-14LD BCR8PM-14LD
3-6
TO-220FL
Status ES OK OK OK OK OK OK OK OK OK OK OK OK OK MP OK OK OK OK OK OK OK OK OK OK OK OK OK
TO-220F
VDRM (V) 600
Tj (C) 150 150 150 150 150 150 150 150
IT (RMS) (A) 8 10 12 16 8 10 12 16 5 8 12 5 8
ITSM (A) 48 60 72 96 48 60 72 96 30 48 72 30 48
IGT (max.) (mA) 50 50 50 50 50 50 50 50 50 50 50 50 50
Package TO-220FL
TO-220F
700
150 150 150 150 150
TO-220FL
TO-220F
High-Voltage/High-Capacity Triacs for General Purposes

Applications Rush-current protection circuit during power-on, heater control, motor control Features
1) 2) 3) 4) 5) High reliability: Adoption of planar structure Insulation-type outline: TO-220F/TO-220FN/TO-3P/TO-3PF High-withstand voltage: 1000 V, 1500 V Large current: 25 A/30 A at TO-220FN Products in lead-forming package available
Status WS OK OK OK OK OK OK OK OK OK MP OK OK OK OK OK OK OK OK OK
Product List
Part No. BCR30KM-8LB BCR16RM-12LB BCR25KM-12LB BCR25RM-12LB BCR30AM-12LA BCR30AM-12LB BCR8PM-20LA BCR8KM-20LA BCR20RM-30LA 1000 1500 600 VDRMS [V] 400 Tj [C] 150 150 150 150 125 150 125 125 125 ITRMS [A] 30 16 25 25 30 30 8 8 20 ITSM [A] 300 160 250 250 300 300 80 80 200 IGT (max.) [mA] 30 30 50 50 50 50 30 30 50 Package TO-220FN TO-3PFN TO-220FN TO-3PFM TO-3P TO-220F TO-220FN TO-3PFM
3-7
Triac with New Package (General Purposes)

Application example Motor control, Heater control such as New frame Washing machine, Vacuum cleaner, etc... TO-220FL Features 1) High Reliability: Planar technology 2) Isolated Package: TO-220 Full mold, Viso = 1800 V (UL recognized) 3) High Temp. : 150 C guarantee 4) Lead Forming is available Lineup
Part No. BCR3LM-12LB BCR3LM-12RB BCR5LM-12LB BCR5LM-12RB BCR8LM-12LB BCR10LM-12LB BCR12LM-12LB BCR16LM-12LB BCR3LM-14LB BCR5LM-14LB BCR8LM-14LB BCR12LM-14LB BCR16LM-14LB
3-8
New P ro d u ct
VDRM (V)
IT (RMS) (A) 3 3 5 5 8 10 12 16 3 5 8 12 16
ITSM (A) 30 30 50 50 80 100 120 160 30 50 80 120 160
IGT (max.) (mA) 20 15 20 15 30 30 30 30 30 30 30 30 30
Status ES OK OK OK OK OK OK OK OK OK OK OK OK OK OK MP
Note
600
OK
---
700
VDRM = 800 V Available (@Tj = 125 C)
General Thyristor
Application example Features
Heater control, Igniter, Regulator, Motor control, Inrush current protection circuit (SW power supply, Inverter lamp, Inverter) etc...
Line up
1) Junction temperature: 110 C, 125 C 2) IGT item is available 3) Lead Forming is available
VDRM (V) 400 Tj (C) 125 125 125 125 125 110 110 125 125 125 125 125 125 125 125 125 125 125 125 125 125 110 110 IT (AV) (A) 0.3 0.3 0.5 0.1 0.4 0.3 0.3 0.5 0.8 5 5 3 6 8 3 6 8 12 6 8 12 0.3 0.3 ITSM (A) 10 10 10 10 10 10 20 8 10 90 90 70 90 120 70 90 120 360 90 120 360 10 20 IGT (max.) (mA) 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 10 15 0.1 10 15 30 10 15 30 0.1 0.1 Status ES OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK MP OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK
Part No. CR02AM-8 CR02AM-8 CR05AS-8 CR05BS-8 CR04AM-12 CR05AM-12 CR03AM-12 CR05BM-12 CR08AS-12 CR5AS-12 CR5AS-12 CR3KM-12 CR6KM-12A CR8KM-12A CR3PM-12 CR6PM-12A CR8PM-12A CR12PM-12A CR6CM-12A CR8CM-12A CR12CM-12A CR05AM-16 CR03AM-16 3-9
Package TO-92 TO-92(3) UPAK MPAK TO-92
600
UPAK MP-3A DPAK(L)-(3) TO-220FN
TO-220F
TO-220
800
TO-92
150 C Guaranteed Thyristor
Application example Features
Heater control, Igniter, Regulator, Motor control, Inrush current protection circuit (SW power supply, Inverter lamp, Inverter) etc... 1) High Reliability: Planar technology 2) High Temp: 150 C guaranteed 3) Lead Forming is available Improve reliability Increase thermal margin Reduce size of heat-sink Can be used in hot environment
Customer's benefit
-
Lineup
Part No. CR6CM-12B CR8CM-12B CR12CM-12B CR6PM-12B CR8PM-12B CR12PM-12B CR25RM-12D VDRM (V) Tj (C) IT (AV) (A) 6 8 12 6 8 12 25 ITSM (A) 90 120 360 90 120 360 360 IGT (max.) (mA) 10 15 30 10 15 30 30 Status ES OK OK OK OK OK OK OK MP OK OK OK OK OK OK OK Package TO-220
600
150
TO-220F
TO-3PFM
3-10
Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation Publication Date: Rev.1.00, August 6, 2010 Published by: Sales Strategic Planning Div. Renesas Electronics Corporation. Edited by: Customer Support Department Global Strategic Communication Div. Renesas Solutions Corporation. 2010. Renesas Electronics Corporation, All rights reserved. R07SM0002EJ0100
Renesas Electronics Corporation.

Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
www.renesas.com
2010. Renesas Electronics Corporation, All rights reserved. Printed in Japan.

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2010.

Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors

Renesas Electronics Corporation

2010. Renesas Electronics Corporation. All rights reserved.

Triacs and Thyristors

Power MOS FETs

Power MOS FETs

2010. Renesas Electronics Corporation. All rights reserved.

Power MOS FET and IGBT Application Map

Drain current ID (A)

Power supplies for communications equipment

Switching power supplies

Industrial equipment AC adapters Monitors and printers

DC-DC power supplies (primary-side SW) (AC200 to 400 V)

Drainsource voltage VDSS (V)

Power MOS FET Trend by Applications

Network-related devices, AC-DC power supplies Switching power supplies

Mobile phones, Notebook PCs, DSCs

Increased current capacity

Small motors (PPCs, printers, HDDs), inverters, high-functional robots

2010. Renesas Electronics Corporation. All rights reserved.

Power MOS FETs

2010. Renesas Electronics Corporation. All rights reserved.

Low-Voltage MOS FET Package Trend

VRM12.0 for Servers

VRM 9.0, 10.0

High Frequency and Large Current

QFN56 Multi-chip Module

Large Current for N/B PC CPU Core

POL and Brick

High Density and High Frequency

Roadmap of Power MOS FETs for Highly Efficient Power Supplies

High-side MOS FET

2nd Gen. Package PKG

1st gen. eq. DrMOS High fr loss low nd

loss low and ller ma S

Parasitic Low-side inductance

(IC + drive + MOS)

JET + SBD WPAK-Dual

FOM High Qgd) . (Ron

FOM: Figure of merit

2010. Renesas Electronics Corporation. All rights reserved.

Roadmap of On-Resistance for Low-Voltage Power MOS FETs

RDS (on) typ. [m], VGS = 4.5 V

N-ch. MOS FETs, 30-V Low Side

HAT2099H 5.0 m Crss/Ciss (0.014)

2010. Renesas Electronics Corporation. All rights reserved.

Servers, other network, telecommunications, notebook PCs, VGA

10th gen. (40 to 80 V) 10th and 11th gen. (30 V)

POL, buck converter POL

POL POL POL

RJK0453DPB (40 V/1.9 m)

Control IC for PFC R2A20112

Vg1 Vg2 Vg3 Vg4

PWM + sync. rect. IC R2A20121

2010. Renesas Electronics Corporation. All rights reserved.

Sample Application: Power Voltage Regulator

10th and 11th gen. (30 V)

VOUT = 1.8 V Memory

POL POL POL POL

10th gen. + SBD

VRM and VRD for CPU Core

Sample Application: Isolating Bus Converters in Brick Casings