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COMP 103 Lecture 04: MOS Transistor short channel and scaling effects

Reading: Section 3.3 up to page107, Sec 3.5


[All lecture notes are adapted from Mary Jane Irwin, Penn State, which were adapted from Rabaeys Digital Integrated Circuits, 2002, J. Rabaey et al.]
COMP 103.1

MOS Long Channel Equations


When VGS > VT, MOS is ON

Linear: When VDS is small: VDS VGS VT ID = kn W/L [(VGS VT)VDS VDS2/2] When VDS is large: VD VGS VT ID = kn/2 W/L [(VGS VT) 2]

Linear or quadratic dependence on VGS

COMP 103.2

Long Channel I-V Plot (NMOS)


6 5 4
X 10-4

VDS = VGS - VT

VGS = 2.5V
Quadratic dependence

VGS = 2.0V
ID (A)
3

Linear
2 1 0

Saturation VGS = 1.5V VGS = 1.0V

cut-off

0.5

1.5

2.5

VDS (V)

NMOS transistor, 0.25um, Ld = 10um, W/L = 1.5, VDD = 2.5V, VT = 0.4V


COMP 103.3

Short Channel Effects


Behavior of short channel device mainly due to
10
5

sat =105 Constant velocity

Constant mobility (slope = )

Velocity saturation the velocity of the carriers saturates due to scattering (collisions suffered by the carriers)

n (m/s)
0 0

c= 1.5

(V/m) For an NMOS device with L of .25m, only a couple of volts difference between D and S are needed to reach velocity saturation
COMP 103.4

Voltage-Current Relation: Velocity Saturation


For short channel devices Linear: When VDS VGS VT ID = (VDS) kn W/L [(VGS VT)VDS VDS2/2] where (V) = 1/(1 + (V/cL)) is a measure of the degree of velocity saturation For large L or small VDS, approaches 1. Saturation: When VDS = VDSAT VGS VT IDSat = (VDSAT) kn W/L [(VGS VT)VDSAT VDSAT2/2]

COMP 103.5

Velocity Saturation Effects


10

VGS = VDD

Long channel devices Short channel devices

For short channel devices and large enough VGS VT VDSAT < VGS VT so the device enters saturation before VDS reaches VGS VT and operates more often in saturation

VDSAT

VGS-VT

IDSAT has a linear dependence wrt VGS so a reduced amount of current is delivered for a given control voltage
COMP 103.6

Short Channel I-V Plot (NMOS)


2.5 2
X 10-4

Early Velocity Saturation

VGS = 2.5V VGS = 2.0V


Linear dependence

ID (A)

1.5 1 0.5 0 0 0.5 1 1.5

Linear

Saturation

VGS = 1.5V VGS = 1.0V

2.5

VDS (V) NMOS transistor, 0.25um, Ld = 0.25um, W/L = 1.5, VDD = 2.5V, VT = 0.4V
COMP 103.7

MOS ID-VGS Characteristics


X 10-4

6 5 4 3 2 1 0 0 0.5 1

long-channel quadratic

Linear (short-channel) versus quadratic (longchannel) dependence of ID on VGS in saturation Velocity-saturation causes the shortchannel device to saturate at substantially smaller values of VDS 2.5 resulting in a substantial drop in current drive

ID (A)

short-channel linear

1.5

VGS (V)
(for VDS = 2.5V, W/L = 1.5)
COMP 103.8

Short Channel I-V Plot (PMOS)


All polarities of all voltages and currents are reversed
-2

VDS (V)

-1

0 0

VGS = -1.0V VGS = -1.5V VGS = -2.0V

-0.2 -0.4 -0.6 -0.8

VGS = -2.5V

-1 X 10-4

PMOS transistor, 0.25um, Ld = 0.25um, W/L = 1.5, VDD = 2.5V, VT = -0.4V


COMP 103.9

The MOS Current-Source Model


G ID S D ID = 0 for VGS VT 0 ID = k W/L [(VGS VT)VminVmin2/2](1+VDS) for VGS VT 0 with Vmin = min(VGS VT, VDS, VDSAT) B

Determined by the voltages at the four terminals and a set of five device parameters
VT0(V) 0.43 -0.4 (V0.5) 0.4 -0.4 VDSAT(V) 0.63 -1 k(A/V2) 115 x 10-6 -30 x 10-6 (V-1) 0.06 -0.1

NMOS PMOS
COMP 103.10

ID (A)

The Transistor Modeled as a Switch


7 6

x105

Req (Ohm)

5 4 3 2 1 0 0.5 1

VGS VT S Ron D

Modeled as a switch with infinite off resistance and a finite on resistance, Ron
Resistance inversely proportional to W/L (doubling W halves Ron) For VDD>>VT+VDSAT/2, Ron independent of VDD Once VDD approaches VT, Ron increases dramatically 2 15 38 2.5 13 31 Ron (for W/L = 1)
For larger devices divide Req by W/L

1.5

(for VGS = VDD, VDS = VDD VDD/2)

VDD (V)

2.5

VDD(V) NMOS(k) PMOS (k)


COMP 103.11

1 35 115

1.5 19 55

Other (Submicon) MOS Transistor Concerns


Velocity saturation Subthreshold conduction
Transistor is already partially conducting for voltages below VT

Threshold variations
In long-channel devices, the threshold is a function of the length (for low VDS) In short-channel devices, there is a drain-induced threshold barrier lowering at the upper end of the VDS range (for low L)

COMP 103.12

Subthreshold Conductance
10-2

Linear region Quadratic region


ID (A)

Transition from ON to OFF is gradual (decays exponentially) Current roll-off (slope factor) is also affected by increase in temperature

Subthreshold exponential region VT


0 0.5 1 1.5 2 2.5

10-12

VGS (V)

Has repercussions in dynamic circuits and for power consumption

COMP 103.13

Threshold Variations

VT Long-channel threshold

VT Low VDS threshold

L Threshold as a function of the length (for low VDS )

VDS Drain-induced barrier lowering (for low L)

COMP 103.14

Scaling Analysis
Manufacturing allows constant reduction in transistor channel length A reduction of 13% per year, halving every 5 years. Scaling analysis: how reduction in feature size influences the operating characteristics and properties of MOS transistors Three different models are assume:
Full Scaling: everything scales by 1/S Fixed-Voltage scaling: everything scales by 1/S except voltages (supply voltage, threshold voltage)
- Integration issues: 5V was standard, and now 3.3V and 2.5V - Silicon bandgap and built-in junction potentials are material parameters - Scaling Vt is limited: cant turn device 100% off Bad Leakage problems - No more benefits for shorter transistors

General Scaling:
- Device features scale by 1/S - Voltages scale by 1/U

COMP 103.15

Scaling Examples
Parameter Relation Full Scaling General Scaling 1/S 1/U 1/S2 S Fixedvoltage scaling 1/S 1 1/S2 S

W, L, tox Vdd, Vt Area of device Cox Cgate Isat Ron Delay P


COMP 103.16

1/S 1/S W*L 1/tox Cox WL Cox WV V/Isat Ron Cgate Isat V 1/S2 S

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