Preliminary Technical Information

High Voltage IGBTs

For Capacitor Discharge
Applications

IXGK75N250
IXGX75N250

VCES = 2500V
IC110 = 75A
VCE(sat) 2.7V

TO-264 (IXGK)
Symbol

Test Conditions

Maximum Ratings

VCES

TJ = 25C to 150C

2500

VCGR

TJ = 25C to 150C, RGE = 1M

2500

VGES

Continuous

20

VGEM

Transient

30

IC25
IC110
ILRMS

TC = 25C ( Chip Capability )

TC = 110C
TC = 25C (Lead RMS Limit)

170
75
160

A
A
A

ICM

TC = 25C, VGE = 20V, 1ms

530

SSOA
(RBSOA)

VGE = 15V, TVJ = 125C, RG = 1

Clamped Inductive Load

ICM = 200
@ 0.8 VCES

PC

TC = 25C

780

-55 ... +150

TJ
TJM

150

Tstg

-55 ... +150

300
260

C
C

1.13/10
20..120/4.5..27

Nm/lb.in.
N/lb.

10
6

g
g

TL
TSOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062 in.) from Case for 10

Md
FC

Mounting Torque ( IXGK )

Mounting Force ( IXGX )

Weight

TO-264
PLUS247

G
C
E

Tab

PLUS247TM (IXGX)

G = Gate
C = Collector

Tab

E
= Emitter
Tab = Collector

Features
Very High Peak Current Capability
Low Saturation Voltage
MOS Gate Turn-On
Rugged NPT Structure
Molding Epoxies meet UL 94V-0
Flammability Classification
Advantages

Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)

Characteristic Values
Min.
Typ.
Max.

BVCES

IC

= 1mA, VCE = 0V

2500

VGE(th)

IC

= 4mA, VCE = VGE

3.0

ICES

VCE = VCES, VGE = 0V

TJ = 125C

V
5.0

50 A
5 mA

IGES

VCE = 0V, VGE = 20V

VCE(sat)

IC

= 75A, VGE = 15V, Note 1

2.7

IC

= 150A

3.6

2010 IXYS CORPORATION, All Rights Reserved

Easy to Mount
Space Savings
High Power Density
Applications
Capacitor Discharge
Pulser Circuits

200 nA

DS99826B(07/10)

IXGK75N250
IXGX75N250
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)

Characteristic Values
Min.
Typ.
Max.

gfs

35

IC = 60A, VCE = 10V, Note 1

Cies
Coes

58

pF

345

pF

110

pF

Qg

tr
td(off)
tf

410

nC

63

nC

175

nC

IC = 75A, VGE = 15V, VCE = 0.5 VCES

Qgc
td(on)

Resistive Switching Times

IC = 150A, VGE = 15V
VCE = 1250V, RG = 1

55

ns

225

ns

270

ns

455

ns

RthJC

0.16 C/W

RthCK

Note

9000
VCE = 25V, VGE = 0V, f = 1MHz

Cres
Qge

TO-264 AA ( IXGK) Outline

0.15

C/W

1. Pulse test, t 300s, duty cycle, d 2%.

*Additional provision for lead-to-lead voltage isolation are required at VCE >1200V.

Terminals:
Back Side

Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T

Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32 20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83

1 = Gate
2,4 = Collector
3 = Emitter

Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072

PLUS247TM (IXGX) Outline

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.

4,931,844
5,017,508
5,034,796

5,049,961
5,063,307
5,187,117

5,237,481
5,381,025
5,486,715

6,162,665
6,259,123 B1
6,306,728 B1

Dim.

6,404,065 B1
6,534,343
6,583,505

1 - Gate
2 - Collector
3 - Emitter

Millimeter
Min. Max.

Inches
Min. Max.

A
A1
A2

4.83
2.29
1.91

5.21
2.54
2.16

.190
.090
.075

.205
.100
.085

b
b1
b2

1.14
1.91
2.92

1.40
2.13
3.12

.045
.075
.115

.055
.084
.123

C
D
E
e
L
L1
Q
R

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106

Terminals:

0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83

.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190

6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

7,157,338B2

IXGK75N250
IXGX75N250
Fig. 2. Output Characteristics @ T J = 125C

Fig. 1. Output Characteristics @ T J = 25C

300
VGE = 25V
20V

300

15V

VGE = 25V
20V
15V

250

15V

200

10V

200

IC - Amperes

IC - Amperes

250

150

10V
150

100

100

50

50

5V

5V
0

0
0

0.5

1.5

2.5

3.5

4.5

0.5

1.5

VCE - Volts

Fig. 3. Dependence of VCE(sat) on

Junction Temperature

3.5

4.5

5.5

8
TJ = 25C

VGE = 15V

7
I

1.8

= 300A
6

1.6

VCE - Volts

VCE(sat) - Normalized

Fig. 4. Collector-to-Emitter Voltage

vs. Gate-to-Emitter Voltage

2.2
2.0

2.5

VCE - Volts

1.4
I

= 150A

1.2

= 300A

4
150A

1.0

0.8

= 75A

0.6

75A

0.4
-50

-25

25

50

75

100

125

150

10

TJ - Degrees Centigrade

12

14

16

18

20

22

24

26

VGE - Volts

Fig. 6. Transconductance

Fig. 5. Input Admittance

250

120
TJ = - 40C
100

g f s - Siemens

IC - Amperes

200

150

100

TJ = 125C
25C
- 40C

50

25C

80

125C
60

40

20

0
3.5

4.0

4.5

5.0

5.5

6.0

6.5

7.0

VGE - Volts

2010 IXYS CORPORATION, All Rights Reserved

7.5

8.0

8.5

9.0

50

100

IC - Amperes

150

200

250

IXGK75N250
IXGX75N250
Fig. 7. Gate Charge

Fig. 8. Capacitance
100,000

16

I C = 75A

Capacitance - PicoFarads

I G = 10 mA

12

VGE - Volts

f = 1MHz

VCE = 1000V

14

10
8
6
4

10,000
Cies

1,000
Coes

100
Cres

2
0

10
0

50

100

150

200

250

300

350

400

450

10

15

QG - NanoCoulombs

20

25

30

35

40

VCE - Volts

Fig. 10. Maximum Transient Thermal Impedance

Fig. 9. Reverse-Bias Safe Operating Area

225

1.000

200

150

Z(th)JC - C / W

IC - Amperes

175

125
100
75
50

TJ = 125C

25

RG = 1
dv / dt < 10V / ns

0
250

500

750

1000

1250

1500

1750

2000

2250

2500

VCE - Volts

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

0.100

0.010

0.001
0.00001

0.0001

0.001

0.01

0.1

Pulse Width - Seconds

10

IXGK75N250
IXGX75N250
Fig. 12. Resistive Turn-on Rise Time
vs. Collector Current

Fig. 11. Resistive Turn-on Rise Time

vs. Junction Temperature
600

700

VCE = 1250V

500

VCE = 1250V
I

500

TJ = 125C

= 300A

t r - Nanoseconds

t r - Nanoseconds

RG = 1 , VGE = 15V

RG = 1 , VGE = 15V

600

400
300
I

200

= 150A

400

300
TJ = 25C
200

100

100
0

0
25

35

45

55

65

75

85

95

105

115

75

125

100

125

150

175

TJ - Degrees Centigrade

Fig. 13. Resistive Turn-on Switching Times

vs. Gate Resistance
80

800

td(on) - - - -

75

500

60
I C = 150A

55

t f - Nanoseconds

65
I C = 300A

t d(on) - Nanoseconds

t r - Nanoseconds

70

600

700
600

VCE = 1250V

200

40

300

I C = 150A

300

100

I C = 300A

200

10

150
100

25

35

45

55

2000

tf

1600

RG = 1, VGE = 15V

td(off) - - - -

480

380

440

360

400

1200

320

1000

280

800

240

t f - Nanoseconds

360

TJ = 125C, 25C

200

400

160

200

120

0
125

150

175

85

95

105

115

50
125

200

225

IC - Amperes

2010 IXYS CORPORATION, All Rights Reserved

250

275

80
300

750

tf

td(off) - - - -

675

TJ = 125C, VGE = 15V

340

600

VCE = 1250V

320

525
I

300

= 150A, 300A

450

280

375

260

300

240

225

220

150

200

t d(off) - Nanoseconds

t d(off) - Nanoseconds

VCE = 1250V

1400

t f - Nanoseconds

1800

100

75

Fig. 16. Resistive Turn-off Switching Times

vs. Gate Resistance

Fig. 15. Resistive Turn-off Switching Times

vs. Collector Current

75

65

TJ - Degrees Centigrade

RG - Ohms

600

350

250

45

400

400

200
100

td(off) - - - -

RG = 1, VGE = 15V

500

50

300

450

tf

300

275

t d(off ) - Nanoseconds

VCE = 1250V

400

250

800

TJ = 125C, VGE = 15V

700

225

Fig. 14. Resistive Turn-off Switching Times

vs. Junction Temperature

900

tr

200

IC - Amperes

75
1

10

RG - Ohms

IXYS REF: IXG_75N250(9P)87-10-10