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AN0016 - Application Note

Introduction Modern computer technology relies on a clock signal to synchronize data processing and communication. The stability over time and temperature for the oscillator used to provide this clock is essential for the microcontroller to operate as expected. In addition, the choice of components in the load circuit affects cost and power consumption of the design. Choosing the correct crystal and load capacitors can be a challenging task, but failing to so may result in a faulty design. The scope of this application note is to provide an introduction to oscillators and provide guidelines in selecting correct components for the oscillator circuit. Topics covered include oscillator theory and some recommended crystals for the EFM32 devices. This application note includes: This PDF document Crystal Selection Spreadsheet

1 Oscillator Theory

1.1 What is an oscillator

An oscillator is an electronic circuit which generates a repetitive time-varying signal, which in this context is used to clock communication and the execution of instructions in the EFM32 microcontroller. Several ways of generating such a signal exists, all with different properties that influences cost, size and stability of the clock signal. RC oscillators are built from resistors, capacitors and an inverting amplifier. They come at a low cost and have a shorter startup time than the crystal oscillator, but variations in component values over temperature makes it difficult to precisely determine the oscillation frequency. The EFM32-series of microcontrollers provide two internal RC-oscillators, one high frequency RC oscillator (HFRCO) and one low frequency RC oscillator (LFRCO). In addition, an auxiliary 14MHz RC oscillator (AUXHFRCO) is used for flash programming and debug trace. While the internal RC-oscillators will ensure proper operation of the EFM32, some applications require higher accuracy than these can provide. Crystal oscillators uses the mechanical vibration of a crystal to generate the clock signal. Due to the molecular composition of the crystal matter and the angle of which the crystal is cut, this type of oscillator is very precise and stable over a wide temperature range. The most commonly used crystal is the quartz crystal. Producing quartz crystals require very stable temperature and pressure conditions over a few weeks. This makes crystal oscillators more expensive than RC oscillators. Ceramic resonators operate in the same way as crystal oscillators. They are easier to manufacture and therefore cheaper than quartz crystals, but suffer from inferior precision in the oscillation frequency. As will be seen in subsequent chapters, the quality factor for ceramic resonators are lower than for crystal oscillators, which usually results in a faster startup time. This can be more important than precision in frequency for some applications. This application note will focus on quartz crystals, however the theory presented is also valid for ceramic resonators.

1.1.1 Piezoelectricity

Quartz crystals and ceramic resonators hold the direct piezoelectric property. This means an applied electric field will cause the crystal to deform. Conversely, a deformation of the crystal will cause a voltage across the terminals. Once the oscillator has started, the changing voltage on the terminals of the vibrating crystal is used as the clock signal.

Figure 1.1. Feedback Oscillator Loop

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...the world's most energy friendly microcontrollers The principle behind the oscillator is a positive feedback loop satisfying the Barkhausen condition: If the closed-loop gain is larger than unity and the total phase lag is 360, the resulting closed-loop system is unstable and will self-reinforce. This is a necessary, but not sufficient, condition for oscillations to be present. When the necessary conditions are met, any disturbance (noise) in the oscillator will cause oscillations to start. The frequency that fulfills the Barkhausen condition is amplified the most, because it is in phase with the original signal. The initial oscillations are very weak and it takes time to amplify the signal to the desired magnitude. When oscillations are established, only a small amount of energy is needed to compensate for losses in the circuit. Mathematically, a closed-loop gain of one is required to maintain steady state oscillations. The EFM32 relies on an internal regulator to adjust the closed-loop gain to unity when the clock signal reaches the desired amplitude. From Figure 1.1 (p. 2) it is seen that the oscillator circuitry consists of two parts; an amplification stage and a filter that decides which frequency experience a 360 phase lag. In the case of a crystal oscillator, the filter consists of the crystal and external load capacitors.

The magnitude of the closed-loop gain has great influence on the startup time. With high gain, the number of times the signal has to be propagated around the loop to reach the desired amplitude is reduced. For fast startup, a high gain is preferred. In the EFM32 the gain can be adjusted by the HFXOBOOST and LFXOBOOST bits in the CMU_CTRL register. The default is high/on, respectively. See Chapter 3 (p. 9) for more information. Note that LFXOBOOST must be set to 0 for some combinations of shunt and load capacitance. Please see the LFXO section in the device datasheet for more information on these limits. For the same reason, the oscillation frequency influences the startup time. A crystal in the kHz range would have a considerably longer startup time than a crystal in the MHz range because the time it takes to circulate the loop is longer. Typical startup times for the EFM32 is 400 milliseconds for low frequencies and 250s in the high frequency domain.

In the EFM32 the oscillator circuit is designed as a Pierce oscillator as shown in Figure 1.2 (p. 3) . Figure 1.2. The Pierce Oscillator in the EFM32

EFM32

XTALP

XTALN

L2

L1

The Pierce oscillator is known to be stable for a wide range of frequencies and for its low power consumption.

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...the world's most energy friendly microcontrollers The EFM32 supports different clock sources to generate the high and low frequency clocks in addition to the internal low and high frequency RC oscillators. The high frequency crystal oscillator (HFXO) and low frequency crystal oscillator (LFXO) supports crystals and ceramic resonators in the range 4-32MHz and 32.768kHz, respectively. External oscillators which provide sine and square waves are also supported, see AN0002 Hardware Design Considerations for register settings and pin connections. Both the high and low frequency clock sources can be used simultaneously.

The crystal can be described by the electrical equivalent circuit in Figure 1.3 (p. 4) . Figure 1.3. The Electric Equivalent Circuit of a Crystal

CS

RS

LS

C0

CS is the motional capacitance. It represents the piezoelectric charge gained from a displacement in the crystal. RS is the motional resistance. It represents the mechanical losses in the crystal. LS is the motional inductance. It represents the moving mass in the crystal. C0 is the shunt capacitance between the electrodes and stray capacitance from the casing. For low frequencies, the electrical equivalent circuit will exhibit capacitive behavior as depicted in Figure 1.4 (p. 4). The presence of the inductor becomes more noticeable as the frequency, and thus reactance, increases. Ignoring the shunt capacitance C0, the series resonant frequency is defined where the reactance of the inductor and capacitor cancels. At this frequency the crystal appears only resistive with no shift in phase. The series resonance frequency therefore decides the values of CS and LS and can be calculated with Equation 1.1 (p. 4). The series resonance frequency is the natural resonance frequency where the energy transformation between mechanical and electrical energy is most effective. Figure 1.4. Reactance vs. Frequency

Reactance

fs

fa Frequency

(1.1)

At higher frequencies, the equivalent circuit will appear inductive, which implies higher impedance. When the inductive reactance from the crystal cancels the capacitive reactance from shunt capacitance C0, another resonance frequency with zero phase shift exists. This frequency is called the anti-resonant

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...the world's most energy friendly microcontrollers frequency, fA. At this frequency, the impedance is at its maximum. The inductance in the crystal and the shunt capacitance will feed each other and the lowest possible current draw is obtained. Crystal Oscillator Anti-Resonant Frequency fA = 1 / (2 pi (LSCSC0 / (CS + C0)) )

(1.2)

The range of frequencies between fS and fA is called the area of parallel resonance and is where the crystal normally will oscillate. At the resonant frequency, the phase lag in the feedback loop is provided by an amplifier with 180 phase lag and two capacitors with a combined 180 phase lag. In practice, the amplifier provides a little more than 180 phase shift, which means the crystal has to appear slightly inductive to fulfill the Barkhausen criterion.

Physically there are no difference between series and parallel resonant crystals. Series resonant crystals are specified to oscillate at the series resonant frequency where the crystal appears with no reactance. Because of this, no external capacitance should be present as this would lower the oscillating frequency to below the natural resonance frequency. These crystals are intended for use in circuits with no external capacitors where the oscillator circuit provides 360 phase shift. Parallel resonant crystals requires an external capacitive load to oscillate at the specified frequency and this is the resonance mode required for the EFM32. The exact oscillation frequency for a parallel resonant crystal can be calculated with Equation 1.3 (p. 5) , where CL is the external capacitance seen by the crystal. CL is therefore an important design parameter and is given in the datasheet for parallel resonant crystals. Parallel Crystal Oscillator Frequency fP = fS(1 + CS / 2CL) (1.3)

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2 Crystal Parameters

2.1 Quality Factor

The quality factor Q is a measure of the efficiency or the relative storage of energy to dissipation of energy in the crystal. For the electrical-equivalent circuit, Equation 2.1 (p. 6) states the relation between R, C and Q. In practice, crystals with higher Q-values are more accurate, but have a smaller bandwidth for which they oscillate. Therefore, high Q-factor crystals will normally start slower than crystals with higher frequency tolerance. Typically, crystals have higher Q-factor than ceramic resonators. Crystals would therefore be expected to have a longer startup time than ceramic resonators. Q-Factor Q = XLs / RS = 1 / (XCs RS) = 1 / (2 pi f CS RS) = 2 pi f LS / RS (2.1)

XLS and XCS are the reactance of LS and CS, respectively, at the operating frequency of the crystal.

As seen in Figure 1.2 (p. 3) , the two capacitors CL1 and CL2 are the loads of the crystal. The effective load capacitance, CL, as seen from the XTAL_N and XTAL_P pins on the EFM32 is the series combination of CL1 and CL2 through ground. Load Capacitance CL = (CL1 CL2) / (CL1 + CL2) + Cstray (2.2)

Where Cstray is the pin capacitance of the microcontroller and any parasitic capacitance, and can often be assumed in the range 2-5pF. Right choice of CL is important for proper operating frequency. Crystals with small load capacitance would typically start faster than crystals requiring CL. Large load capacitors also increase power consumption. It is recommended to use a crystal with CL as specified in Chapter 4 (p. 10) . The device datasheets also contain more information on the allowed load capacitance range.

The Equivalent Series Resistance is the resistance in the crystal during oscillation and varies with the resonance frequency. ESR, as given in Equation 2.3 (p. 6) , will typically decrease with increasing oscillation frequency. Equivalent Series Resistance ESR = RS(1 + C0/CL)

2

(2.3)

The HFXO/LFXO circuits of the EFM32 cannot guarantee startup of crystals with ESR larger than a certain limit. Please refer to the device datasheet for further details. The smaller the ESR, compared to this maximum value, the better gain margin for startup of the crystal which in turn reduces the startup time. Additionally, a small ESR value gives lower power consumption during oscillation. Note that HF crystals have ESR of a few tens of Ohms as compared to the LF crystals which have ESR values normally measured in kOhm. Therefore a few Ohm of series resistance has more influence on the startup margin in the MHz range as compared to the kHz range.

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2.4 Pullability

Pullability refers to which extent it is possible to tune the resonance frequency of the crystal by changing the values of CL1 and CL2. The crystal sees these capacitors in series through ground, parallel to the closed loop. They will therefore slightly alter the anti-resonance frequency of the crystal. Increasing CL lowers the resonance frequency and vice versa. It is recommended to follow the crystal vendor's recommendations for CL. Pullability Average pullability (ppm/pF) = Cs 10 / 2 (C0 + CL)

6 2

(2.4)

Drive level is a measure of the power dissipated in the crystal. The crystal manufacturer states the maximum value tolerated by the crystal. Exceeding this value can damage the crystal. Drive Level DL = ESRI

2

(2.5)

I is the RMS current flowing through the crystal. An external resistor can be added to limit the drive level if necessary; however this is not recommended unless DL is too high since it reduces the gain margin and increases power consumption of the oscillator.

A critical condition for oscillations to build up requires the energy supplied to exceed the energy dissipated in the circuit. In other words, the negative resistance of the amplifier has to exceed the equivalent series resistance in the crystal. An approximate formula for negative resistance is given in Equation 2.6 (p. 7) . Negative resistance Rneg = gm / ( (2 pi f) CL1 CL2)

2

(2.6)

Where gm is the transconductance of the oscillator circuitry. Substituting Rneg with the equivalent series resistance in the crystal and solving for gm gives a minimum value for the core transistor transconductance. Minimum Transconductance gm_min = ESR (2 pi f) CL1CL2 The gain margin is then given as: Gain Margin GM = gm / gm_min (2.8)

2

(2.7)

Common practice is to require a gain margin of at least 5. Refer to the device datasheet for transconductance of the core transistor. If the gain margin is not sufficient, another crystal with lower ESR and/or load capacity requirements should be chosen.

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Frequency stability is the maximum frequency deviation from the specified oscillating frequency over the given operating temperature range.

Frequency tolerance is the maximum frequency deviation from the specified oscillating frequency at 25C. This parameter gives an indication of variations between individual crystals.

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The total energy consumption for the oscillator depends on several factors: the startup power consumption and startup time, the frequency-dependant power consumption and the time the oscillator is running. A part of the energy is consumed internally in the oscillator and buffer circuitry, and some is consumed in the crystal. An approximate formula to calculate the power dissipated in the crystal is given in Equation 3.1 (p. 9) . Power Dissipation in Crystal P = 1/2 ESR (2 pi f Vpp (C0 + CL))

2

(3.1)

Vpp is the peak to peak voltage across the crystal at the resonance frequency. Because the internal buffer draws some current regardless of clock frequency, the average power consumption per MHz is usually lower for high clock frequencies. In the energy conscious sense it is therefore favorable to alternate between short periods in run mode with HFXO enabled and lower energy modes where HFXO is not running. Since the startup time depends on clock frequency, high frequency crystals are recommended to reduce the startup time. During startup the current consumption is higher than after oscillations has stabilized. A short startup time reduces the period of which the current consumption of the oscillator is high and is therefore essential if the oscillator is frequently switched on and off. In general one would like the circuit to be operational as fast as possible and a fast startup time is therefore favorable. Crystals with low ESR and load capacitance typically have the shortest startup time and consumes the least power. Energy consumption can be reduced by choosing a HFXO crystal in the lower frequency range in applications where entering a deeper sleep mode is not feasible. It is possible to adjust the LFXOBOOST and HFXOBOOST bits which determines gain in the oscillator circuits to reduce the startup power consumption. The default is on/high, so changing this value will result in an increased startup-time. The bits are located in the CMU_CTRL register. Refer to the reference manual for the device more information. Note that some shunt and load capacitance combinations for the LFXO requires the LFXOBOOST bit to be set to 0. More information on these limits are found in the LFXO section of the device datasheet.

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4 Recommended Crystals

When deciding upon which crystal to employ, the following considerations could be helpful to ensure a proper functioning oscillator. Precision. High quality crystals are very precise, but come at a higher cost. Ceramic resonators are cheaper, but less precise. However, if no special precision is needed, the internal RC oscillators consume less power at the same frequency. Consult the device datasheet for details. Operating environment. Temperature, humidity and mechanical vibration affects the stability properties. For crystals, define what crystal cut is more appropriate. For most applications, AT cut is an excellent choice due to good temperature stability over a wide temperature range. SC cut has good stability when exposed to mechanical vibrations, but suffers from humidity and temperature changes. Many more cuts with different properties exists. Package. Surface mount or through-hole. If size is critical, define maximum package dimensions. Calculate gain margin. If gain margin is less than 5, find another crystal or ceramic resonator. Find load capacitors. If CL1, L2 is within range specified by the crystal datasheet, check if it meets a standard capacitor value. If not, use the nearest value available. A variable capacitor can be used to pull the correct frequency if desired. The recommended crystals are chosen from a selection of popular crystals sorted in categories for low ESR, low cost, and high frequency stability and tolerance. By examining the list of considerations above, one should be able to find a suitable crystal. See the attached spreadsheet to calculate the load capacitor values. All the recommended crystals are fundamental mode, as is recommended for the EFM32.

Attached to this Application Note is a spreadsheet containing data for the recommended crystals. The spreadsheet automatically calculates the required load capacitance values and gain margins. Startup-boost can be adjusted using the bit values as specified in the reference manual for the device. This setting will affect the transconductance value of the core resistor and thus impact the gain margin. The default setting for the EFM32 is high/on. Lowering the startup-boost will reduce the current consumption when starting the oscillator. Note that some shunt and load capacitance combinations for the LFXO requires the LFXOBOOST bit to be set to 0. More information on these limits are found in the LFXO section of the device datasheet. The Stray Capacitance value is the parasitic capacitance used in the calculation of the load capacitance values. The crystal data provided is used to calculate drive level, gain margin and load capacitor values in correspondence to the formulae given in this document. Data from the crystal vendors is used to estimate the maximum power consumption in the crystal. Note that this value is an approximate value and only reflects the power dissipated in the crystal and not the driver circuitry.

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Table 4.1. 32MHz Crystals

Mfg ECS Inc TXC Abracon Citizen NDK NDK NDK NDK Part ECS-320-20-30B-DU 7B-32.000MAAJ-T ABM8G-32.000MHZ-B4Y-T CS325H-32.000MEDQ-UT NX2520SA-32.000000MHZ NX3225SA-32.000000MHZ NX5032GA-32.000000MHZ NX8045GB-32.000000MHZ ESR C0 CL GM P Tolerance Footprint 5.0x3.2 mm 5.0x3.2 mm 3.2x2.5 mm 3.2x2.5 mm 2.5x2.0 mm 3.2x2.5 mm 5.0x3.2 mm 8.0x4.5 mm

Mfg CTS Abracon Abracon Fox Electronics Fox Electronics TXC Part ATS040SM-T ABLS2-4.000MHZ-D4Y-T ABLS-4.000MHZ-B2-T FQ1045A-4.000 FOXSDLF/040 9C-4.000MAAJ-T ESR C0 CL GM P 4 W 6 W 6 W 6 W 7 W 5 W Tolerance 30 PPM 30 PPM 20 PPM 30 PPM 50 PPM 30 PPM Footprint HC49 HC49 HC49 10.0x4.5 mm 13.9x5.0 mm HC49

120 Ohm 7 pF 180 Ohm 7 pF 180 Ohm 7 pF 150 Ohm 7 pF 200 Ohm 7 pF 150 Ohm 7 pF

Mfg Epson Toyocom Epson Toyocom Abracon Citizen Citizen Fox Electronics Golledge Part MC-405 32.7680K-A0 MC-306 32.7680K-A0 ABS10-32.768KHZ-1-T CM315-32.768KEZF-UT CFS206-32.768KDZF-UB FX135A-327 GSWX26 ESR 35 kOhm 50 kOhm 70 kOhm 70 kOhm 35 kOhm 70 kOhm 35 kOhm C0 0.85 pF 0.9 pF 1 pF 1.05 pF 1.35 pF 1 pF 1.35 pF CL GM P Tolerance Footprint 10.4x4.0 mm 8.0x3.8 mm 4.9x1.8 mm 3.2x1.5 mm Cylinder 3.2x1.5 mm Cylinder

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5 Revision History

5.1 Revision 1.10

August 10th, 2011. Updated recommendations on use of LFXOBOOST. Updated recommended crystals in document and spreadsheet for LFXO.

September 20th, 2010 Initial revision.

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A.1 Disclaimer

Energy Micro AS intends to provide customers with the latest, accurate, and in-depth documentation of all peripherals and modules available for system and software implementers using or intending to use the Energy Micro products. Characterization data, available modules and peripherals, memory sizes and memory addresses refer to each specific device, and "Typical" parameters provided can and do vary in different applications. Application examples described herein are for illustrative purposes only. Energy Micro reserves the right to make changes without further notice and limitation to product information, specifications, and descriptions herein, and does not give warranties as to the accuracy or completeness of the included information. Energy Micro shall have no liability for the consequences of use of the information supplied herein. This document does not imply or express copyright licenses granted hereunder to design or fabricate any integrated circuits. The products must not be used within any Life Support System without the specific written consent of Energy Micro. A "Life Support System" is any product or system intended to support or sustain life and/or health, which, if it fails, can be reasonably expected to result in significant personal injury or death. Energy Micro products are generally not intended for military applications. Energy Micro products shall under no circumstances be used in weapons of mass destruction including (but not limited to) nuclear, biological or chemical weapons, or missiles capable of delivering such weapons.

Energy Micro, EFM32, EFR, logo and combinations thereof, and others are the registered trademarks or trademarks of Energy Micro AS. ARM, CORTEX, THUMB are the registered trademarks of ARM Limited. Other terms and product names may be trademarks of others.

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B Contact Information

B.1 Energy Micro Corporate Headquarters

Postal Address Energy Micro AS P.O. Box 4633 Nydalen N-0405 Oslo NORWAY www.energymicro.com Phone: +47 23 00 98 00 Fax: + 47 23 00 98 01 Visitor Address Energy Micro AS Sandakerveien 118 N-0484 Oslo NORWAY Technical Support support.energymicro.com Phone: +47 40 10 03 01

Visit www.energymicro.com for information on global distributors and representatives or contact sales@energymicro.com for additional information. Americas Europe, Middle East and Africa Asia and Pacific www.energymicro.com/asia

www.energymicro.com/americas www.energymicro.com/emea

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Table of Contents

1. Oscillator Theory ....................................................................................................................................... 2 1.1. What is an oscillator ........................................................................................................................ 2 1.2. Basic Principle of Oscillators ............................................................................................................. 2 1.3. Modeling the Crystal ....................................................................................................................... 4 2. Crystal Parameters .................................................................................................................................... 6 2.1. Quality Factor ................................................................................................................................ 6 2.2. Load Capacitance ........................................................................................................................... 6 2.3. Equivalent Series Resistance ............................................................................................................ 6 2.4. Pullability ....................................................................................................................................... 7 2.5. Drive Level .................................................................................................................................... 7 2.6. Gain Margin ................................................................................................................................... 7 2.7. Frequency Stability .......................................................................................................................... 8 2.8. Frequency Tolerance ....................................................................................................................... 8 3. Reducing Energy Consumption .................................................................................................................... 9 4. Recommended Crystals ............................................................................................................................ 10 4.1. Crystal Selection Spreadsheet ......................................................................................................... 10 4.2. Crystal Specifications .................................................................................................................... 11 5. Revision History ...................................................................................................................................... 12 5.1. Revision 1.10 ............................................................................................................................... 12 5.2. Revision 1.00 ............................................................................................................................... 12 A. Disclaimer and Trademarks ....................................................................................................................... 13 A.1. Disclaimer ................................................................................................................................... 13 A.2. Trademark Information ................................................................................................................... 13 B. Contact Information ................................................................................................................................. 14 B.1. Energy Micro Corporate Headquarters .............................................................................................. 14 B.2. Global Contacts ............................................................................................................................ 14

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List of Figures

1.1. 1.2. 1.3. 1.4. Feedback Oscillator Loop ......................................................................................................................... The Pierce Oscillator in the EFM32 ............................................................................................................ The Electric Equivalent Circuit of a Crystal .................................................................................................. Reactance vs. Frequency ......................................................................................................................... 2 3 4 4

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List of Tables

4.1. 32MHz Crystals .................................................................................................................................... 11 4.2. 4MHz Crystals ...................................................................................................................................... 11 4.3. 32768Hz Crystals .................................................................................................................................. 11

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List of Equations

1.1. 1.2. 1.3. 2.1. 2.2. 2.3. 2.4. 2.5. 2.6. 2.7. 2.8. 3.1. Crystal Oscillator Series Resonant Frequency ............................................................................................. Crystal Oscillator Anti-Resonant Frequency ................................................................................................ Parallel Crystal Oscillator Frequency ......................................................................................................... Q-Factor ............................................................................................................................................... Load Capacitance ................................................................................................................................... Equivalent Series Resistance .................................................................................................................... Pullability ............................................................................................................................................... Drive Level ............................................................................................................................................ Negative resistance ................................................................................................................................. Minimum Transconductance ..................................................................................................................... Gain Margin ........................................................................................................................................... Power Dissipation in Crystal ..................................................................................................................... 4 5 5 6 6 6 7 7 7 7 7 9

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