Code No: Y0221/R07

Set No. 1

I B.Tech Supplementary Examinations, November 2009 BASIC ELECTRONIC DEVICES AND CIRCUITS (Electrical & Electronic Engineering) Time: 3 hours Max Marks: 80 Answer any FIVE Questions All Questions carry equal marks

1. (a) With the help of a neat sketch, explain the principle of working of a CRT. (b) In a CRT, the length of deecting plates is 2cm. The spacing between the plates is 0.6cm. The distance of the screen from the center of the plates is 16cm. Calculate the deection sensitivity in m/volt if the nal anode voltage is: i. 600V and ii. 900V. 2. (a) Determine the resistivity of Germanium: i. in intrinsic condition at 300 0 K ii. with donor impurity of 1 in 107 iii. with acceptor impurity of 1 in 108 Given for germanium at room temperature. ni = 2.5 1013 /cm3 ; p = 1800 cm2 /V-sec, n = 3800 cm2 /V-sec and number of Germanium atoms/cm3 = 4.4 1022 . (b) Compare Avalanche and Zener breakdown. 3. (a) Dene the following terms of a half wave rectier with resistive load: i. Ripple factor ii. Peak inverse voltage iii. Rectication eciency. (b) A 230 V, 60Hz voltage is applied to the primary of a 5 : 1 step down, center tapped transformer used in a full wave rectier having a load of 900. If the diode resistance and the secondary coil resistance together has a resistance of 100, determine: i. ii. iii. iv. v. dc voltage across the load dc current owing through the load dc power delivered to the load PIV across each diode. Ripple voltage and its frequency. [10+6] [8+8]

[6+10]

4. (a) Explain the mechanism of current ow in a PNP and NPN Transistor. (b) In a transistor operating in active region, although the collector junction is reverse-biased, the collector current is quite large. Explain. [8+8] 1 of 2 Please purchase PDF Split-Merge on www.verypdf.com to remove this watermark.

Code No: Y0221/R07 5. (a) Prove that stability factor S =

(IC ICO1 )S (+1)

Set No. 1

(b) Draw a circuit employing a thermistor compensation and explain its working. [8+8] 6. (a) The h-parameters of a transistor used as an amplier in the CE conguration are hie =800, hf e = 50, hoe =80 106 1 and hre =5.4 104 . If the load resistance is 5 K, determine the current gain, input impedance, output impedance, voltage gain and power gain. (b) Draw the small signal model for a common-source FET amplier. [10+6]

7. (a) An amplier has a gain of -100 and a distortion of 8%. What is the eect of introducing negative feedback with feedback factor of 0.05? (b) Find Af for a CE stage with an un bypassed emitter resistor. 8. (a) Find Vi /Vf for the network shown in gure 8a. [8+8]

Figure 8a (b) Sketch the circuit of a phase shift oscillator using feedback network shown in gure 8b.

Figure 8b (c) Find the expression for the frequency of oscillation, assuming that the network does not load down the amplier of question (b). (d) Find the minimum gain required for oscillations of the circuit of question (b). [16]

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Code No: Y0221/R07

Set No. 2

I B.Tech Supplementary Examinations, November 2009 BASIC ELECTRONIC DEVICES AND CIRCUITS (Electrical & Electronic Engineering) Time: 3 hours Max Marks: 80 Answer any FIVE Questions All Questions carry equal marks

1. (a) Derive the expression for the electro magnetic deection sensitivity in the case of the CRT. (b) An electron with a velocity of 3 105 ms1 enters an electric eld of 910 V/m making an angle of 600 with the positive direction. The direction of the electric eld is in the positive Y direction. Calculate the time required to reach its maximum height. [8+8] 2. (a) What are the various applications of p-n junction diode? Explain them. (b) What are the specications of p-n junction diode? Explain how reverse saturation current varies with temperature both in Si and Ge diodes. (c) Explain about the characteristics of zener diode. 3. (a) Dene the following terms of a half wave rectier with resistive load: i. Ripple factor ii. Peak inverse voltage iii. Rectication eciency. (b) A 230 V, 60Hz voltage is applied to the primary of a 5 : 1 step down, center tapped transformer used in a full wave rectier having a load of 900. If the diode resistance and the secondary coil resistance together has a resistance of 100, determine: i. ii. iii. iv. v. dc voltage across the load dc current owing through the load dc power delivered to the load PIV across each diode. Ripple voltage and its frequency. [5+6+5]

[6+10]

4. (a) Draw two biasing circuits for an enhancement type MOSFET and explain its characteristics. (b) The data sheet for an enhanced MOSFET gives ID = 4.5mA at VGS =12V and VGS(th) =6V. Determine the value of ID for VGS =10V. [10+6] 5. (a) Determine the stability factor for the circuit shown in gure 5a.

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Code No: Y0221/R07

Set No. 2

Figure 5a (b) Calculate the thermal resistance for the 2N338 transistor for which the manufacturer species Pc,max =125mW at 250 C free-air temperature and maximum junction temperature Tj =1500 C. What is the junction temperature if the collector dissipation is 75mW? [8+8] 6. Obtain CB h parameters in terms of CC h parameters. 7. (a) Dene Desensitivity D. What is the signicance of this? (b) An amplier without feedback gives a fundamental output of 36V with 7 percent second-harmonic distortion when the input is 0.028V. If 1.2 percent of the output is fed back into the input in a negative voltage series feedback circuit, what is the output voltage? If the fundamental output is maintained at 36V but the second-harmonic distortion is reduced to 1 percent, what is the input voltage? [6+10] 8. Take into account the loading of the RC network in the phase shift oscillator shown in gure 8 If R0 is the output impedance of the amplier (assume that Cs is arbitrarily large) prove that the frequency of oscillations f and the minimum gain A are given by 1 f = 2RC 1 Ro
6+4(
R

[16]

A = 29 + 23 Ro + 4 R

Ro 2 R

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Code No: Y0221/R07

Set No. 2

Figure 8

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Code No: Y0221/R07

Set No. 3

I B.Tech Supplementary Examinations, November 2009 BASIC ELECTRONIC DEVICES AND CIRCUITS (Electrical & Electronic Engineering) Time: 3 hours Max Marks: 80 Answer any FIVE Questions All Questions carry equal marks

1. (a) Explain with a block diagram the major parts of CRT. (b) An electron is injected with an initial velocity V0x of 4 106 m/sec halfway between two large parallel plates 0.5cm apart. The XZ plane is parallel to the plates. There is a voltage of 200V impressed between the plates, directed from the positive to the negative plate. Where does the electron strike the positive plate and with what velocity? [8+8] 2. (a) How does the reverse sturation current of diode varies with temperature. Explain. (b) Draw the energy band diagram of p-n diode for no bias, forward bias and reverse bias and explain. [6+10] 3. (a) Draw the circuit diagram of a FWR and explain its working principle. (b) Design a lter for full wave circuit with LC lter to provide an output voltage of 10V with a load current of 200 mA and the ripple is limited to 2%. [8+8] 4. (a) A silicon transistor with VBE = 0.7V, = 0.98 and collector cut-o current of 10 A is connected as shown in gure 4a. Find:

Figure 4a (a) and ICO (b) IC , IE and VCE . (c) Briey describe some applications of JFET. 1 of 2 Please purchase PDF Split-Merge on www.verypdf.com to remove this watermark. [10+6]

Code No: Y0221/R07

Set No. 3

5. (a) Compare the advantages and disadvantages of biasing schemes. (b) Calculate the quiescent current and voltage of collector to base bias arrangement using the following data: Vcc =10V, Rb =100K, Rc =2K, =50 and also specify a value of Rb so that Vce =7V. [8+8] 6. Show that the exact expression for hf b in terms of the CB hybrid parameters is hf (1hre )+hie hoe hf b = (1+hef e )(1hre )+hoe hie [116] from this formula obtain the approximate expression for hf e . 7. (a) An amplier has a gain of -100 and a distortion of 8%. What is the eect of introducing negative feedback with feedback factor of 0.05? (b) Find Af for a CE stage with an un bypassed emitter resistor. 8. (a) Find Vi /Vf for the network shown in gure 8a. [8+8]

Figure 8a (b) Sketch the circuit of a phase shift oscillator using feedback network shown in gure 8b.

Figure 8b (c) Find the expression for the frequency of oscillation, assuming that the network does not load down the amplier of question (b). (d) Find the minimum gain required for oscillations of the circuit of question (b). [16]

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Code No: Y0221/R07

Set No. 4

I B.Tech Supplementary Examinations, November 2009 BASIC ELECTRONIC DEVICES AND CIRCUITS (Electrical & Electronic Engineering) Time: 3 hours Max Marks: 80 Answer any FIVE Questions All Questions carry equal marks

1. (a) Derive the expressions for acceleration, Velocity and displacement of a charged particle placed in an electric eld E. (b) Two parallel plates of a capacitor are separated by 4 cms. An electron is at rest initally at the bottom plate. Voltage is applied between the plates, which increases linearly from 0V to 8V in 0.1 m.sec. If the top plate is +ve, determine: i. The speed of electron in 40 n sec ii. The distance traversed by the electron in 40 n sec. [8+8]

2. (a) Derive the expression for contact dierence of potential V0 in the case of an open circuited p-n junction. (b) What is the ratio of current for a forward bias of 0.08 V to the current for the same magnitude of reverse bias for the Germanium diode. [8+8] 3. (a) Discuss the operation of HW recitier with and without capacitor lter. (b) Draw the Half wave rectier circuit using a step down Transformer with Vs = 46 sin(100 t) and a semiconductor diode. Calculate the turns ratio of the Transformer windings when the primary voltage of the Transformer is 230 volts. [8+8] 4. (a) Give the UJT symbol and simplied equivalent circuit with external resistors included. (b) Draw UJT emitter characteristics and mention various regions. (c) If VE <VP and VE >VP , explain how UJT works for these conditions.[6+5+5] 5. (a) Determine the stability factor for the circuit shown in gure 5a.

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Code No: Y0221/R07

Set No. 4

Figure 5a (b) Calculate the thermal resistance for the 2N338 transistor for which the manufacturer species Pc,max =125mW at 250 C free-air temperature and maximum junction temperature Tj =1500 C. What is the junction temperature if the collector dissipation is 75mW? [8+8] 6. (a) An FET amplier in the common-source conguration uses a load resistance of 500K. The ac drain resistance of the device is 100K and the transconductance is 0.8mAV1 . Calculate the voltage gain of the amplier. (b) Draw the hybrid model of a CE amplier and dene the h parameters. [8+8] 7. (a) An amplier has a gain of -100 and a distortion of 8%. What is the eect of introducing negative feedback with feedback factor of 0.05? (b) Find Af for a CE stage with an un bypassed emitter resistor. [8+8]

8. (a) Prove that the amplitude of the oscillations is limited by the onset of nonlinearity. (b) Design a phase-shift oscillator to operate at a frequency of 5kHz. Use a MOSFET with =55 and rd =5.5K. The phase shift network is not to load down the amplier. Find the minimum value of the drain circuit resistance Rd for which the circuit will oscillate. [8+8]

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