GaN films have been epitaxially grown onto (001) silicon by electron cyclotron resonance microwave-plasma-assisted molecularbeamepitaxy. The full width at half-maximum of the x-ray rocking curve in the best case was found to be 60 min. The band gap of &GaN is 3. EV and the index of the refraction below the absorption edge is 2.5.
GaN films have been epitaxially grown onto (001) silicon by electron cyclotron resonance microwave-plasma-assisted molecularbeamepitaxy. The full width at half-maximum of the x-ray rocking c…