BU508AF

BU508AF
TV Horizontal Output Applications

TO-3PF 2.Collector 3.Emitter

1.Base

NPN Triple Diffused Planar Silicon Transistor

Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCES VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Value 1500 700 5 5 15 60 150 - 65 ~ 150 Units V V V A A W C C

Electrical Characteristics TC=25C unless otherwise noted

Symbol VCEO(sus) BVEBO ICES IEBO hFE VCE(sat) VBE(sat) Parameter * Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Test Condition IC = 100mA, IB = 0 IE = 10mA, IC = 0 VCE = 1500V, VBE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 4.5A IC = 4.5A, IB = 2A IC = 4.5A, IB = 2A 2.25 1 1.5 V V Min. 700 5 1 10 Typ. Max. Units V V mA mA

* Pulse Test: PW = 300s, duty cycle = 1.5% Pulsed

2000 Fairchild Semiconductor International

Rev. A, February 2000

BU508AF

Typical Characteristics

100

10000

VBE(sat)[mV], SATURATION VOLTAGE

VCE = 5V

IC = 2 IB

hFE, DC CURRENT GAIN

10

1000

100

0.1 0.01

0.1

10

10 0.1

10

100

IC[A], COLLECTOR CURRENT

IC[A], COLLECTOR CURRENT

Figure 1. Static Characteristic

Figure 2. Base-Emitter Saturation Voltage

10000

1000

VCE(sat)[mV], SATURATION VOLTAGE

IC = 2 IB

f = 1MHz

1000

Cob [pF], CAPACITANCE

100

100

10 0.1

10 1 10 100 1 10 100

IC[A], COLLECTOR CURRENT

V CB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Collector-Emitter Saturation Voltage

Figure 4. Collector Output Capacitance

80 100 70

IC[A], COLLECTOR CURRENT

IC Max. (Pulsed)
10

PD [W], POWER DISSIPATIOAN

IC Max. (Continuous)

1m s DC

60

50

40

30

20

0.1

10

0 0.01 1 10 100 1000 0 25 50

o

75

100

125

150

175

200

VCE [V], COLLECTOR-EMITTER VOLTAGE

TC[ C], CASE TEMPERATURE

Figure 5. Safe Operating Area

Figure 6. Power Derating

2000 Fairchild Semiconductor International

Rev. A, February 2000

BU508AF

Package Demensions

TO-3PF
5.50 0.20

4.50 0.20

15.50 0.20

3.60 0.20

3.00 0.20 (1.50)

10.00 0.20

10

26.50 0.20

23.00 0.20

16.50 0.20

14.50 0.20

0.85 0.03

16.50 0.20

2.00 0.20

14.80 0.20

2.00 0.20 2.00 0.20 4.00 0.20 0.75 0.10

+0.20

2.00 0.20

2.50 0.20

2.00 0.20

3.30 0.20

5.45TYP [5.45 0.30]

5.45TYP [5.45 0.30]

0.90 0.10

+0.20

3.30 0.20

2.00 0.20

5.50 0.20

1.50 0.20

Dimensions in Millimeters
2000 Fairchild Semiconductor International Rev. A, February 2000

22.00 0.20

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2000 Fairchild Semiconductor International

Rev. E

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