TIP120/121/122

TIP120/121/122

Medium Power Linear Switching Applications

• Complementary to TIP125/126/127

1 TO-220

1.Base 2.Collector 3.Emitter

NPN Epitaxial Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted Equivalent Circuit
C
Symbol Parameter Value Units
VCBO Collector-Base Voltage : TIP120 60 V
: TIP121 80 V
B
: TIP122 100 V
VCEO Collector-Emitter Voltage : TIP120 60 V
: TIP121 80 V
: TIP122 100 V
VEBO Emitter-Base Voltage 5 V R1 R2

IC Collector Current (DC) 5 A R1 ≅ 8kΩ E

ICP Collector Current (Pulse) 8 A R 2 ≅ 0.12 k Ω
IB Base Current (DC) 120 mA
PC Collector Dissipation (Ta=25°C) 2 W
Collector Dissipation (TC=25°C) 65 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C

Electrical Characteristics TC=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage
: TIP120 IC = 100mA, IB = 0 60 V
: TIP121 80 V
: TIP122 100 V
ICEO Collector Cut-off Current
: TIP120 VCE = 30V, IB = 0 0.5 mA
: TIP121 VCE = 40V, IB = 0 0.5 mA
: TIP122 VCE = 50V, IB = 0 0.5 mA
ICBO Collector Cut-off Current
: TIP120 VCB = 60V, IE = 0 0.2 mA
: TIP121 VCB = 80V, IE = 0 0.2 mA
: TIP122 VCB = 100V, IE = 0 0.2 mA
IEBO Emitter Cut-off Current VBE = 5V, IC = 0 2 mA
hFE * DC Current Gain VCE = 3V,IC = 0.5A 1000
VCE = 3V, IC = 3A 1000
VCE(sat) * Collector-Emitter Saturation Voltage IC = 3A, IB = 12mA 2.0 V
IC = 5A, IB = 20mA 4.0 V
VBE(on) * Base-Emitter ON Voltage VCE = 3V, IC = 3A 2.5 V
Cob Output Capacitance VCB = 10V, IE = 0, f = 0.1MHz 200 pF
* Pulse Test : PW≤300µs, Duty cycle ≤2%

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

 TIP120/121/122
Typical characteristics

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

10000

VCE = 4V 3.5
IC = 250IB

3.0
hFE, DC CURRENT GAIN

2.5

1000
2.0

V BE(sat)
1.5

1.0
V CE(sat)

100 0.5
0.1 1 10 0.1 1 10

IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

1000
10
f=0.1MHz

10 us
0u
50

s
0
Cob[pF] Cib[pF], CAPACITANCE

1m
IC[A], COLLECTOR CURRENT

s
5m
s
D
C
1

100

Cob
0.1
Cib TIP120

TIP121
TIP122

10
0.1 1 10 100 0.01
1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
VEB[V], EMITTER-BASE VOLTAGE

Figure 3. Output and Input Capacitance Figure 4. Safe Operating Area

vs. Reverse Voltage

80

70
PC[W], POWER DISSIPATION

60

50

40

30

20

10

0
0 25 50 75 100 125 150 175

o
TC[ C], CASE TEMPERATURE

Figure 5. Power Derating

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

 TIP120/121/122
Package Demensions

TO-220

1.30 ±0.10 9.90 ±0.20 4.50 ±0.20

(8.70)

2.80 ±0.10
(1.70)

+0.10
ø3.60 ±0.10 1.30 –0.05

18.95MAX.
(3.70)

15.90 ±0.20
9.20 ±0.20

(1.46)

(3.00)
(45°
)
(1.00)
13.08 ±0.20

10.08 ±0.30

1.27 ±0.10 1.52 ±0.10

0.80 ±0.10 +0.10

0.50 –0.05 2.40 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]

10.00 ±0.20

Dimensions in Millimeters

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

 TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™ FAST® OPTOPLANAR™ STAR*POWER™
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DenseTrench™ GTO™ PowerTrench® SuperSOT™-8
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STAR*POWER is used under license

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when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2001 Fairchild Semiconductor Corporation Rev. H3