75NF75

HEXFET
Dynamic dv/dt Rating 175C Operating Temperature Fast switching Ease of Paralleling Simple Drive Requirements

Power MOSFET

VDSS = 75V ID25 = 75A RDS(ON) = 13.0 m

Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Pin1Gate Pin2Drain Pin3Source

Absolute Maximum Ratings

Parameter ID@TC=25C IDM Continuous Drain Current, VGS@10V Pulsed Drain Current

Max. 75 60 300 200 1.5 20

Units A W W/C V mJ V/ns C

ID@TC=100C Continuous Drain Current, VGS@10V PD@TC=25C Power Dissipation Linear Derating Factor VGS EAR dv/dt TJ TSTG Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque,6-32 or M3 screw

23 5.9 55 to +175 300(1.6mm from case) 10 Ibf . in(1.1N . m)

Thermal Resistance
Parameter RJC RCS RJA Junction-to-case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Min. Typ. 0.50 Max. 0.65 62 C /W Units

75NF75
HEXFET
Electrical Characteristics @TJ=25 C (unless otherwise specified)
Parameter V(BR)DSS
V(BR)DSS/ T J

Power MOSFET
Test Conditions

Min. 75 2.0 20

Typ. 0.074 13 64 49 48 4.5

Max. Units 13.0 4.0 25 250 100 -100 160 29 55 nS V

Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage current Gate-to-Source Forward leakage Gate-to-Source Reverse leakage Total Gate Charge Gate-to-Source charge Gate-to-Drain ("Miller") charge Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance

VGS=0V,ID=250uA

V/C Reference to 25C,ID=1mA m VGS=10V,ID=40A V S A nA VDS=25V,ID=40A VDS=75V,VGS=0V VDS=60V,VGS=0V,TJ=150C VGS=20V VGS=-20V

RDS(on) VGS(th)

VDS=VGS, ID=250A

gfs
IDSS IGSS Qg Qgs Qgd

ID=40A nC VDS=60V VGS=10V See Fig.6 and 13 VDD=38V ID=40A RG=2.5 VGS=10V See Figure 10

td(on) tr td(off) tf
LD

LS Ciss Coss Crss

Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Min. . . Typ. 100 410

7.5 3820 610 130 Max. 75 A 300 1.3 150 610 V

Units

Between lead, 6mm(0.25in.) nH from package and center of die contact VGS=0V pF VDS=25V f=1.0MHZ See Figure 5 Test Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ=25C,IS=40A,VGS=0V TJ=25C,IF=40A di/dt=100A/s

Source-Drain Ratings and Characteristics

Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge

IS ISM VSD trr Qrr

nS nC

ton Forward Turn-on Time Notes:

Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)

Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)

Starting TJ = 25C, L = 370mH, RG = 25, IAS = 40A, VGS=10V (See Figure 12) ISD 40A, di/dt 300A/s, VDD V(BR)DSS,TJ 175C Pulse width 400s; duty cycle 2%.