GATE-2012: (Test Series-1)

1.
(b) (b) (b) (b) (b)

2. (b) (b) (b) (b) (b)
3. (b) (b) (b) (b) (b)
4. (c) (c) (c) (c) (c)
5. (a) (a) (a) (a) (a)
6. (c) (c) (c) (c) (c)
7. (d) (d) (d) (d) (d)
15. (d) (d) (d) (d) (d)
16. (d) (d) (d) (d) (d)
17. (b) (b) (b) (b) (b)
18. (a) (a) (a) (a) (a)
19. (c) (c) (c) (c) (c)
20. (b) (b) (b) (b) (b)
21. (c) (c) (c) (c) (c)
22. (b) (b) (b) (b) (b)
23. (a) (a) (a) (a) (a)
24. (b) (b) (b) (b) (b)
25. (c) (c) (c) (c) (c)
26. (c) (c) (c) (c) (c)
27. (c) (c) (c) (c) (c)
28. (b) (b) (b) (b) (b)
8. (c) (c) (c) (c) (c)
9. (b) (b) (b) (b) (b)
10. (d) (d) (d) (d) (d)
11. (c) (c) (c) (c) (c)
12. (a) (a) (a) (a) (a)
13. (c) (c) (c) (c) (c)
14. (c) (c) (c) (c) (c)
GATE-2012
(TEST SERIES-1)
EC: Electronics Engineering
(EDC and Control Systems)
Sl Sl Sl Sl Sl. .. .. N NN NNo oo oo.: 111211 .: 111211 .: 111211 .: 111211 .: 111211
A NS WE R S A NS WE R S A NS WE R S A NS WE R S A NS WE R S
29. (a) (a) (a) (a) (a)
30. (a) (a) (a) (a) (a)
31. (c) (c) (c) (c) (c)
32. (a) (a) (a) (a) (a)
33. (c) (c) (c) (c) (c)
34. (c) (c) (c) (c) (c)
35. (c) (c) (c) (c) (c)
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[14] GATE - 2012 (TEST SERIES - 1) ELECTRONICS ENGINEERING
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EXPLANATIONS
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1. 1. 1. 1. 1. (b) (b) (b) (b) (b)
(1 e
sT
) = 1 (1 sT) = sT
sT
1 e
s
= T (zero order)
2. 2. 2. 2. 2. (b) (b) (b) (b) (b)
Total number of zeros (including zeros at
infinite) = Total number of poles (including
poles at infinity).
3. 3. 3. 3. 3. (b) (b) (b) (b) (b)
Diffusion of carriers is found in semiconductor
materials not in metals.
4. 4. 4. 4. 4. (c) (c) (c) (c) (c)
V
DS(sat)
= V
GS
V
TN
= 0 (2.5) = 2.5 V
V
DS
< V
DS(sat)
Hence MOSFET is biased in non-saturation
region ; so
I
D
=
2
n GS TN DS DS
K 2(V V ) V V
1

]
= ( )
2
1.1 2 0 ( 2.5) (0.5) 0.5
1

]
= 2.475 mA
2.48 mA
5. 5. 5. 5. 5. (a) (a) (a) (a) (a)
For a stable system:
GM and PM should be positive.
Gain cross-over frequency must occur
prior to phase cross-over frequency i.e.
gc
<
pc
6. 6. 6. 6. 6. (c) (c) (c) (c) (c)
0.98 =
1
T
1 e
1
T
e
= 1 0.98 = 0.02
1
T
= 3.912
T =
1
0.2556 0.26 sec.
3.912

7. 7. 7. 7. 7. (d) (d) (d) (d) (d)
C(s) = R(s) G(s)
=
2
1 20
s s 2s 5
+ +
So steady state output
=
2
s 0 s 0
20
lim sC(s) lim s
s(s 2s 5)

+ +
=
20
4
5

8. 8. 8. 8. 8. (c) (c) (c) (c) (c)
Static gain of 1 and time constant 1 sec
gives =
1
1 s +
Delay of 0.1 sec = e
0.1s
Transfer function =
0.1s
e
1 s
+
9. 9. 9. 9. 9. (b) (b) (b) (b) (b)
=
n p i
1
e( )n +
=
19 10
1
1.6 10 (1300 500) 1.5 10
+
= 231481.4815 -cm
Option (b) is the nearest one.
Note: Note: Note: Note: Note: Memorize table 2.1-Millman & Halkias.
10. 10. 10. 10. 10. (d) (d) (d) (d) (d)
2
s(T )
I
=
2 1
1
T T
5
s(T )
I 2
_

,
10
12
=
1
300 T
12 5
0.5 10 2
_

,

2
1
=
1
300 T
5
2
_

,
1
300 T
5
= 1
ELECTRONICS ENGINEERING EDC AND CONTROL SYSTEMS [15]
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.
T
1
= 300 5 = 295 K
Similarly
50 10
12
=
2
T 300
12 5
10 2
_

,
log 50 =
2
T 300
log2
5
T
2
=
5log50
300
log2
+
= 328.2 K
Hence required temperature range is
295 K T 328.2 K
Note: Note: Note: Note: Note: As you know, in the forward region of the
di ode i -v rel ati onshi p i s cl osel y
approximately by
i =
T
v
V
s
I e 1
_

,
In this equation I
s
is usually called a
saturation current. Another name for I
s
is
the scale current. This name arises from
the fact that I
s
is directly proportional to
the cross-sectional area of the diode. The
value of I
s
is, however, a very strong function
of temperature. As a rule of thumb, I
s
doubles in value for every 5C rise in
temperature.
Now when diode is reverse biased; then
diode current
i I
s
That is, the current in the reverse direction
is constant and equal to I
s
. Real diodes
exhibit reverse currents that, though quite
small, are much larger than I
s
. The reverse
current also increases somewhat with the
increase in magnitude of the reverse
voltage.
A large part of the reverse current is due to
leakage effects. These leakage currents are
proportional to the junction area, just as I
s
is. Their dependence on temperature,
however, is different from that of I
s
. Thus,
whereas I
s
doubles for every 5C rise in
temperature, the corresponding rule of
thumb for the temperature dependence of
the reverse current is that it doubles for
every 10C rise in temperature.
If still you are not getting it If still you are not getting it If still you are not getting it If still you are not getting it If still you are not getting it, ,, ,, refer article refer article refer article refer article refer article
T T T T Ter er er er erminal characteristics of junction minal characteristics of junction minal characteristics of junction minal characteristics of junction minal characteristics of junction
diodes The reverse bias region of diodes The reverse bias region of diodes The reverse bias region of diodes The reverse bias region of diodes The reverse bias region of
chapter Diodes in book Microelectronic chapter Diodes in book Microelectronic chapter Diodes in book Microelectronic chapter Diodes in book Microelectronic chapter Diodes in book Microelectronic
circuits by Sedra/Smith. circuits by Sedra/Smith. circuits by Sedra/Smith. circuits by Sedra/Smith. circuits by Sedra/Smith.
11. 11. 11. 11. 11. (c) (c) (c) (c) (c)
At, cut-off voltage the drain current
becomes zero.
I
D
=
2
GS
DSS
P
V
I 1
V
_

,
0 =
2
GS
P
V
1
V
_

,
or V
GS
= V
P
13. 13. 13. 13. 13. (c) (c) (c) (c) (c)
Population inversion phenomenon is
observed in LASER diode operation.
Varactor di ode i s used as vari abl e
capacitor, that is why name vari-cap is also
associated with it.
Zener diode is used as reference voltage.
Tunnel diode works as an oscillator in
negati ve resi stance regi on of i ts
characteri sti cs wi th proper bi asi ng
arrangements.
14. 14. 14. 14. 14. (c) (c) (c) (c) (c)
dV
dT
0.0025 V
dV (0.0025 dT)V
dV 0.0025 (100 25)
dV 0.1875 V
Hence voltage across the diode at 100C
= (0.7 0.1875)V
= 0.5125 V
Option (c) is the nearest answer.
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15. 15. 15. 15. 15. (d) (d) (d) (d) (d)
The transfer function is of the form
1 2
1
s(1 sT ) (1 sT ) + +
16. 16. 16. 16. 16. (d) (d) (d) (d) (d)
y
1
(n) = x(n 1) 2y
1
(n 1) y
2
(n 1) ...(i)
y
2
(n) = y
1
(n 1) ...(ii)
From equation (i) and (ii)
y
1
(n) = x(n 1) 2y
1
(n 1) y
1
(n 2)
or
y
1
(n) = x(n 1) 2y
1
(n 1) y
1
(n 2) ...(iii)
From equation (ii) and (iii) ; we have
y
2
(n + 1) + 2y
2
(n) + y
2
(n 1) = x(n 1)
y
2
(n) + 2y
2
(n 1) + y
2
(n 2) = x(n 2)
...(iv)
Taking z-transform of equation (iv) ; we have
Y
2
(z) + 2z
1
Y
2
(z) + z
2
Y
2
(z) = z
2
X(z)
2
Y (z)
X(z)
=
2
1 2
z
1 2z z

+ +
=
2
1 2
z
(1 z )
+
=
2
1
1
z
(1 z )
1
1
+
]
17. 17. 17. 17. 17. (b) (b) (b) (b) (b)
Characteristic equation is
1 + G(s) H(s) = 0
2
K(s 3)
1
s(s 2s 2)
+
+
+ +
= 0
s
3
+ 2s
2
+ (2 + K) s + 3K = 0
Applying Routh Hurwitzs criteria, we have
3
2
1
0
s 1 (2 K)
s 2 3K
4 2K 3K
s
2
s 3K
+
+
For the stability of system, there should be
no sign change in the first column of Routh
array, hence
3K > 0 K > 0
and
4 2K 3K
2
+
> 0
4 K > 0
K < 4
Therefore range of values of K for which
system is stable is
0 < K < 4
18. 18. 18. 18. 18. (a) (a) (a) (a) (a)
From given block diagram
y
x
=
2
K
s s(K 3) 3K 2 + + + +
Hence characteristic equation is
s
2
+ s(K + 3) + 3K + 2 = 0
or
s
2
+ K(s + 3) + 3s + 2 = 0 ...(i)
or
2
K(s 3)
1
s 3s 2
+
+
+ +
= 0
G(s) H(s) =
2
K(s 3)
(s 3s 2)
+
+ +
RL
3 2 1
RL
The break-away point can be calculated as
Rearranging characteristic equation
K(s + 3) = (s
2
+ 3s +2)
K =
2
(s 3s 2)
(s 3)
+ +
+
Hence
dK
ds
=
2
2
(s 3)(2s 3) (s 3s 2)
(s 3)
1
+ + + +
1
+
]
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.
Putting
dK
ds
= 0 we have
2s
2
+ 3s + 6s + 9 s
2
3s 2 = 0
s
2
+ 6s + 7 = 0
s =
6 36 28
2
t
s =
6 8 6 2.83
2 2
t t
s = 1.585 ; 4.41
19. 19. 19. 19. 19. (c) (c) (c) (c) (c)
1 + G(s) H(s) = 0

3
K
1 1
s(s 3)
+
+
= 0
s(s
3
+ 27 + 9s
2
+ 27s) + K = 0
s
4
+ 27s + 9s
3
+ 27s
2
+ K = 0
s
4
+ 9s
3
+ 27s
2
+ 27s + K = 0
Routh array is as below:
4
3
2
1
0
s 1 27 K
s 9 27 0
s 24 K 0
648 9K
s 0 0
24
s K
For system to be oscillatory row s

1
should
be zero.

mar
648 9K
24
= 0
K
mar
=
648
72
9

Now auxiliary equation is
24s
2
+ K
mar
= 0
24s
2
+ 72 = 0
Put s = j ;
24(j)
2
= 72

2
=
72
3
24

= 3 rad/ sec
20. 20. 20. 20. 20. (b) (b) (b) (b) (b)
The state model is
1
2
x (t)
x (t)
1
1
]
=
1
2
x (t) 2 4 0
u(t)
x (t) 2 1 1
1 1 1
+
1 1 1
] ] ]
A =
2 4 0
; B
2 1 1
1 1
1 1
] ]
AB =
4
1
1
1
]
and
[B AB] =
0 4
1 1
1
1
]
|B AB| = 0 4 0
Hence system is controllable.
The characteristic equation of the system
is:
|sI A| = 0

s 0 2 4
0 s 2 1
1 1
1 1
] ]
= 0

s 2 4
2 s 1
+
+
= 0
(s + 2) (s + 1) 8 = 0
s
2
+ s + 2s + 2 8 = 0
s
2
+ 3s 6 = 0
s
2
+ 3s 6 = 0
s =
3 9 24 3 5.74
2 2
t + t
s = 1.37 and 4.37

Hence system is unstable as one root lies
on the RHS of s-plane.
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.
21. 21. 21. 21. 21. (c) (c) (c) (c) (c)
From Bode plot
Zero at =
1
Poles at = 0, =
2
and = 10
Now, from graph, between 0.1 and ,
26 = 20[log
1
log 0.1]

1
2 rad/sec
Also, 20 log K = 6 + 20 log2 = 12
K 4
Between
2
and 10,
6 = 20[log 10 log
2
]

2
5 rad/sec
G(s) =
1
2 3
K(1 sT )
s(1 sT )(1 sT )
+
+ +
=
s
4 1
2
s s
s 1 1
5 10
_
+

,
_ _
+ +

, ,
=
100(s 2)
s(s 5) (s 10)
+
+ +
So G(s) =
100(s 2)
s(s 5)(s 10)
+
+ +
22. 22. 22. 22. 22. (b) (b) (b) (b) (b)
WhenGM= 20 =
1
20log
a
_

,
a = 0.1
WhenGM= 28 =
1
20log
a
_

,
a = 0.04
Gain should be increased by a factor of
0.1
0.04
= 2.5 = K.
23. 23. 23. 23. 23. (a) (a) (a) (a) (a)
Transfer function of the system is
=
2
1 2 1
1
s T T sT 1 + +
=
1 2
2
2 1 2
1
T T
s 1
s
T T T
_
+ +

,

n
=
1 2
1
T T
and 2
n
=
2
1
T
So =
1 2 1
2 2
T T 1 T
2T 2 T
System is very much underdamped if

< 0.5
1
2
1 T
2 T
< 0.5
T
1
< < T
2
24. 24. 24. 24. 24. (b) (b) (b) (b) (b)
1 + G(s) H(s) =
150
1
s(1 0.25s)
+
+
1 + G(s) H(s) =
s(1 0.25s) 150
s(1 0.25s)
+ +
+
Given
r(t) = (1 + t
2
) u(t)
R(s) =
2
3 3
1 2 s 2
s s s
+
+
Now
E(s) =
R(s)
1 G(s)H(s) +
=
2
3
[s 2]
s
s(1 0.25s) 150
s(1 0.25s)
+
+ +
+
E(s) =
[ ]
2
2
(s 2) (1 0.25s)
s s(1 0.25s) 150
+ +
+ +
Steady state error
e
ss
=
s 0
lim sE(s)
e
ss
=
[ ]
2
2
s 0
(s 2) (1 0.25s)
lim s
s (1 0.25s) 150
1
+ +
1
+ +
1
]
e
ss
=
M
A
D
E

E
A
S
Y
Ph: Ph: Ph: Ph: Ph: 011-45124612, 9958995830
Ph: Ph: Ph: Ph: Ph: 040-20032005, 9160002324
Ph: Ph: Ph: Ph: Ph: 0120-6524612, 8860378009
Ph: Ph: Ph: Ph: Ph: 0755-4004612
C
o
p
y
r
i
g
h
t
:

S
u
b
j
e
c
t

m
a
t
t
e
r

t
o

I
E
S

M
A
D
E

E
A
S
Y
,

N
e
w

D
e
l
h
i
.

N
o

p
a
r
t

o
f

t
h
i
s

b
o
o
k

m
a
y

b
e

r
e
p
r
o
d
u
c
e
d

o
r

u
t
i
l
i
s
e
d

i
n

a
n
y

f
o
r
m

w
i
t
h
o
u
t

t
h
e

w
r
i
t
t
e
n

p
e
r
m
i
s
s
i
o
n
.
25. 25. 25. 25. 25. (c) (c) (c) (c) (c)
Hole diffusion current density is given as
J
p
=
p
dp
eD
dx
=
p
x
L
19 14 15
d
1.6 10 15 10 10 e
dx
1
1
+
1
1
]
=
p
x
15
L
19
p
10
1.6 10 15 e
L
1
1

1
1
]
=
p
x
4
L
p
1.6 15 10
e
L

=
4
4
10 10
4
10 10
4
1.6 15 10
e
10 10
= 2.4 e
1
= 0.88 A/cm
2
26. 26. 26. 26. 26. (c) (c) (c) (c) (c)
Energy associated with the moving mass is
E =
2
1
mv
2
E =
2
1
1 (1) 0.5 J
2

As we know that
1.6 10
19
J = 1 eV
0.5 J =
19
1
0.5 eV
1.6 10
=
19
1
eV
3.2 10
Hence
E =
19
1
eV
3.2 10
As we have
E(eV) =
1.24
(m)
=
1.24
E(eV)
=
19
1.24
1
3.2 10
= 3.97 10
19
m
27. 27. 27. 27. 27. (c) (c) (c) (c) (c)
C
j
V
j
1/2
1
2
j
j
C
C
=
2
1
j
j
V
V
2
j
20
C
=
(5 1) 6
5 5
+
2
j
C =
5
20 18.25 pF
6

28. 28. 28. 28. 28. (b) (b) (b) (b) (b)
Given:
N
A
= 10
16
/cm
3
N
D
= 10
15
/cm
3
n
i
10
10
/cm
3
Hence contact potential can be calculated as
V
o
=
A D
2
i
N N
0.0259 n
n
l
V
o
=
16 15
20
10 10
0.0259 n
10
_

,
l
V
o
= 0.656 volt.
As we have, depletion width
W =
s
o R
A D
2 1 1
(V V )
q N N
_ _
+ +

, ,
=
14
19
16 15
2 11.7 8.854 10
1.6 10
1 1
(0.656 5)
10 10
_

,
_
+ +

,
= 2.8 10
4
cm
= 2.8 m
Note: Note: Note: Note: Note: As n As n As n As n As n
i ii ii
10 10 10 10 10
10 10 10 10 10
/cm /cm /cm /cm /cm
3 3 3 3 3
; hence given junction ; hence given junction ; hence given junction ; hence given junction ; hence given junction
is made p of Si material is made p of Si material is made p of Si material is made p of Si material is made p of Si material
So So So So So
s ss ss
= == ==
r rr rr

o oo oo
where where where where where

r rr rr
= == == 11.7 11.7 11.7 11.7 11.7
M
A
D
E

E
A
S
Y
Ph: Ph: Ph: Ph: Ph: 011-45124612, 9958995830
Ph: Ph: Ph: Ph: Ph: 040-20032005, 9160002324
Ph: Ph: Ph: Ph: Ph: 0120-6524612, 8860378009
Ph: Ph: Ph: Ph: Ph: 0755-4004612
C
o
p
y
r
i
g
h
t
:

S
u
b
j
e
c
t

m
a
t
t
e
r

t
o

I
E
S

M
A
D
E

E
A
S
Y
,

N
e
w

D
e
l
h
i
.

N
o

p
a
r
t

o
f

t
h
i
s

b
o
o
k

m
a
y

b
e

r
e
p
r
o
d
u
c
e
d

o
r

u
t
i
l
i
s
e
d

i
n

a
n
y

f
o
r
m

w
i
t
h
o
u
t

t
h
e

w
r
i
t
t
e
n

p
e
r
m
i
s
s
i
o
n
.
29. 29. 29. 29. 29. (a) (a) (a) (a) (a)
When S
1
is closed and S
2
is open
I
B
=
9 0.7
250 101 1.2
+
0.0223 mA
So I
c
= I
B
= 2.23 mA
V
CE
= 9 2.23(1.5 + 1.2) = 2.9 V
Operating point (2.9 V, 2.23 mA) active
region.
30. 30. 30. 30. 30. (a) (a) (a) (a) (a)
KVL around the base-emitter ground loop
gives.
V
EE
= I
BQ
R
B
+ V
BEQ
+ I
EQ
R
E
...(i)
Also I
EQ
=
CQ
1
I
+
Putting above value in equation (i) and

solving for R
B
yields
R
B
=
EE BEQ
E
CQ
(V V )
( 1)R
I

+
R
B
=
3
50(4 0.7)
(50 1) 200
2 10
R
B
= 72.3 k
31. 31. 31. 31. 31. (c) (c) (c) (c) (c)
I
D(sat)
=
2 n ox
GS TN
C W
(V V )
2 L
ox
C
=
14
8
3.9 8.85 10
350 10
= 9.86 10
8
F/cm
2
So
I
D(sat)
=
8 2
GS TN
450 30
(9.86 10 ) (V V )
2 2
_ _

, ,
I
D(sat)
= 3.33 10
4
(V
GS
V
TN
)
2
Now
g
m
=
D(sat)
GS
I
V
= (3.33 10
4
) (2) (V
GS
V
TN
)
= (3.33 10
4
) (2) (4 0.8)
= 2.13 10
3
= 2.13 mS
32. 32. 32. 32. 32. (a) (a) (a) (a) (a)
Characteristic equation
|sI A| = 0
s 0 0 1
0 s 1 2
1 1
1 1

] ]
= 0
s 1
1 s 2
+
= 0
s(s + 2) + 1 = 0
s
2
+ 2s + 1 = 0
33. 33. 33. 33. 33. (c) (c) (c) (c) (c)
State transition matrix
(t) =
1 1
L (sI A)

1
]
=
2 2
1
2 2
1 1 1
s 1 (s 1) (s 1)
L
1 1 1
(s 1) (s 1) (s 1)
1
+
1
+ + +
1
1
+
1
+ + +
]
=
t t t
t t t
te e te
te te e

1
+
1
+ 1
]
34. 34. 34. 34. 34. (c) (c) (c) (c) (c)
Einstein relation gives
p
p
D
= V
T
=
kT
q
D
p
=
p
kT
q
D
p
= 0.0259 500
= 12.95 cm
2
/s
As diffusion length
L
p
=
p p
D =
10
12.95 10
= 3.6 10
5
cm
Now we are given
N
a
= 10
17
cm
3
M
A
D
E

E
A
S
Y
Ph: Ph: Ph: Ph: Ph: 011-45124612, 9958995830
Ph: Ph: Ph: Ph: Ph: 040-20032005, 9160002324
Ph: Ph: Ph: Ph: Ph: 0120-6524612, 8860378009
Ph: Ph: Ph: Ph: Ph: 0755-4004612
C
o
p
y
r
i
g
h
t
:

S
u
b
j
e
c
t

m
a
t
t
e
r

t
o

I
E
S

M
A
D
E

E
A
S
Y
,

N
e
w

D
e
l
h
i
.

N
o

p
a
r
t

o
f

t
h
i
s

b
o
o
k

m
a
y

b
e

r
e
p
r
o
d
u
c
e
d

o
r

u
t
i
l
i
s
e
d

i
n

a
n
y

f
o
r
m

w
i
t
h
o
u
t

t
h
e

w
r
i
t
t
e
n

p
e
r
m
i
s
s
i
o
n
.
Since
N
a
> > n
i
So
p
o
= N
a
= 10
17
cm
3
As we are given steady state excess
concentration as
p = 5 10
16
cm
3
Now the hole concentration is given as
p
x
L
o
p p pe
+
p =
5
5
10
3.6 10 17 16
10 (5 10 ) e

,
+
p = 1.379 10
17
cm
3
Now as discussed in the statement of
problem, we can write p in terms of quasi-
Fermi level as below
i p
(E F ) / kT
i
p n e

(1.379 10
17
cm
3
) = (1.5 10
10
cm
3
)
i p
(E F )/ kT
e

E
i
F
p
=
17
10
1.379 10
0.0259 n
1.5 10
_

,
l
E
i
F
p
= 0.415 eV
Now
i
c p i p
E
E F E F
2
+
=
1.1
0.415
2
+
= 0.965 eV
35. 35. 35. 35. 35. (c) (c) (c) (c) (c)
Excess stored hole charge
Q
p
= q A(p) L
p
= 1.6 10
19
(0.5) (5 10
16
) (3.6 10
5
)
= 1.44 10
7
C

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1.

(b) (b) (b) (b) (b)

For system to be oscillatory row s

s = 1.37 and 4.37

System is very much underdamped if

Putting above value in equation (i) and

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