Experiment 5: Characteristics Of Transistor [Pnp/Npn] 5.

1 Objective To characterize PNP and NPN bipolar junction transistors To identify the characteristics of IE, IB and IC.

5.2 Apparatus 1. KL- 21001 Linear Circuit Lab 2. Experiment module: KL- 23002 3. Digital Multimeter, Oscilloscope and Function Generator. 4. Tools: Basic hand tools 5. Materials: As indicated in the KL-23002

5.3 Procedures:

(1) Experiment For Characteristics Of Pnp Transistor Item (1-1): Measurement of Ie, Ib and Ic.

1. First, fix the module KL-23002 in the KL-21001 Linear Circuit Lab, then locate the block marked 23002- block a. 2. Insert the short-circuit clip jumper by referring to Figure 5.1 (a) and the short-circuit clip jumper arrangement diagram in Figure 5.1 (b).

3. Connect the Ammeter to measure Ib, Ic and Ie. (If the Ammeters are not sufficiently available, the original ammeter locations that are not yet measured can be connected with the short- circuit clip) 4. Adjust VR2 (10 k) so that Ic 3mA and will be the maximum (Ic (sat)). 5. View Ib, Ic and Ie, then record the result in Table 5-1. Ic Ie 3mA Ic 3 mA Ic (sat) Ib 18.5 92.3 Ie 3.0 12.0 = Ic/Ib 0.16 0.13

(2) Experiment For Characteristics Of Npn Transistor Item (2-1): Measurement of Ie, Ib and Ic.

1. Insert the short-circuit clip jumper by referring to Figure 5.2 (a) and short-circuit clip jumper arrangement diagram in Figure 5.2 (b). Repeat item (1), step 3, 4 and 5. Record in Table 5-2.

Ic Ie 3mA Ic 3 mA Ic (sat) Ib 23.0 94.7 Ie 3.0 12.0 = Ic/Ib 0.13 0.13

Item (2-2): Measurement and plotting for the characteristic curve of transistor.

1. Insert the short-circuit jumper clip by referring to Figure 5.4 and short-circuit clip arrangement diagram in Figure 5.3. 2. Adjust VR2 (10 k) so that Ib 0 A. (approximately zero) 3. Adjust VR1 (1 k) so that Vce will sequentially be 0.1V, 0.3V, 0.5V, 0.7V, 1.0V, 2.0V, 3.0V, 4.0V, 5.0V, and will eventually approach to Vcc. Record each corresponding Ic value in Table 5.3(b). 4. Adjust VR2 so that Ib will be the values as indicated in Table 5-3(b), then repeat Step (3) to measure Vce and Ic. Record the result in Table 5-3(b). 5. Referring to output characteristics curve, utilize the data shown in Table 5-3 to plot thecharacteristics curve.

Result: (a) Ib 0
Vce (V) Ic (mA) 0.1 0 0.2 0 0.3 0 0.5 0 0.7 0 1.0 0 3.0 0 5.0 0 6.0 0

(b) Ib = 10A
Vce (V) Ic (mA) 0.1 0.821 0.2 1.252 0.3 1.258 0.5 1.259 0.7 1.260 1.0 1.262 3.0 1.269 5.0 1.275 6.0 1.275

(c) Ib = 20A
Vce (V) Ic (mA) 0.1 1.120 0.2 2.300 0.3 2.350 0.5 2.360 0.7 2.360 1.0 2.360 3.0 2.365 5.0 2.365 6.0 2.365

(d) Ib = 30A
Vce (V) Ic (mA) 0.1 2.170 0.2 3.590 0.3 3.810 0.5 3.830 0.7 3.840 1.0 3.850 3.0 3.880 5.0 3.900 6.0 3.900

(e) Ib = 40A
Vce (V) Ic (mA) 0.1 2.680 0.2 4.710 0.3 5.070 0.5 5.100 0.7 5.110 1.0 5.140 3.0 5.160 5.0 5.190 6.0 5.193

(f) Ib = 50A
Vce (V) Ic (mA) 0.1 2.440 0.2 5.660 0.3 6.410 0.5 6.470 0.7 6.480 1.0 6.510 3.0 6.560 5.0 6.590 6.0 6.594

(g) Ib = 60A
Vce (V) Ic (mA) 0.1 2.520 0.2 6.530 0.3 7.590 0.5 7.700 0.7 7.720 1.0 7.730 3.0 7.800 5.0 7.860 6.0 7.867

Analysis Data

Current vs Voltage
9 8 7 6 current Ic (mA) 5 4 3 2 1 0 1
0.1 0.2 0.3 0.5 0.7 1.0 3.0 5.0 6.0

Current I (mA) Ib= 0 Current I (mA) Ib = 10 Current I (mA) Ib = 20 Current I (mA) Ib = 30 Current I (mA) Ib = 40 Current I (mA) Ib = 50 Current I (mA) Ib = 60

Voltage (V)

10

From this graph it shown that IE = IC IB is a very small. It current in mikro ampere. So IE = IB + IC when IB is small value so we assume IE = IC. X-Axis stand for output current while Y-Axis stand for output voltage. We also can conclude when the output voltage increase the output current also increase.

Current I (mA) Ib= 0 Vce 0.1 0.2 0.3 0.5 0.7 1 3 5 6 0 0 0 0 0 0 0 0 0 Ib = 10 0.821 1.252 1.258 1.259 1.26 1.262 1.269 1.275 1.275 Ib = 20 1.12 2.3 2.35 2.36 2.36 2.36 2.365 2.365 2.365 Ib = 30 2.17 3.59 3.81 3.83 3.84 3.85 3.88 3.9 3.9 Ib = 40 2.68 4.71 5.07 5.1 5.11 5.14 5.16 5.19 5.193 Ib = 50 2.44 5.66 6.41 6.47 6.48 6.51 6.56 6.59 6.594 Ib = 60 2.52 6.53 7.59 7.7 7.72 7.73 7.8 7.86 7.867

Discussion Transistors are among the most important semiconductor components in electronic circuit technology. The electrodes of a bipolar transistor are called the emitter (E), the base (B) and the collector (C). Electrons and holes are both involved in conducting current. The transistor consists of a total of three n-conducting and p-conducting layers, in the order NPN or PNP. The base layer, located in the middle, is so thin that charge carriers originating at one junction can cross to the other junction. NPN is one of the two types of bipolar junction transistors (BJT), consisting of a layer of Pdoped semiconductor (the "base") between two N-doped layers. A small current entering the base is amplified to produce a large collector and emitter current which is an NPN transistor is "on" when its base is pulled high relative to the emitter. Most of the NPN current is carried by electrons, moving from emitter to collector as minority carriers in the P-type base region. Most bipolar transistors used today are NPN, because electron mobility is higher than hole mobility in semiconductors, allowing greater currents and faster operation. A mnemonic device for the remembering the symbol for an NPN transistor is not pointing in, based on the arrows in the symbol and the letters in the name which is, the NPN transistor is the BJT transistor that is "not pointing in".

NPN transistor

PNP transistor

The other type of BJT is the PNP, consisting of a layer of N-doped semiconductor between two layers of P-doped material. A small current leaving the base is amplified in the collector output. That is, a PNP transistor is "on" when its base is pulled low relative to the emitter. The arrows in the NPN and PNP transistor symbols are on the emitter legs and point in the direction of the conventional current flow when the device is in forward active mode. A mnemonic device for the remembering the symbol for a PNP transistor is pointing in (proudly), based on the arrows in the symbol and the letters in the name which is the PNP transistor is the BJT transistor that is "pointing in". Conclusion: From this experiment we can understandstand about PNP and PNP transistor. We also know how to draw the symbol PNP and NPN transistor. The transistor contains three legs which are Base, Collector and Emitter. The different symbol only direction of arrow in the symbol. The arrow meant toward N. After that, we also know how to characterize PNP and NPN bipolar transistor and beside that we can identify the characteristic of IE, IB and IC . otherwise IE = IB + IC when IB is small value so we assume IE = IC. From graph X-Axis stand for output current and saturation region or on suis while Y-Axis stand for output voltage and cutoff region or off suis. Then IE stands for active region. The activity happen in active region. References : 1. http://en.wikipedia.org/wiki/Bipolar_junction_transistor 2. http://www.ld-didactic.de/literatur/hb/e/p4/p4152_e.pdf 3. http://aries.ucsd.edu/NAJMABADI/CLASS/ECE65/06-W/NOTES/BJT1.pdf 4. http://www.physics.csbsju.edu/trace/NPN.CC.html

SEMESTER 1 SESI 2011/2012 SFE 3013 BASIC ELECTRONICS

LABORATORY REPORT 5

EXPERIMENT 5: CHARACTERISTICS OF TRANSISTOR [PNP/NPN] NUR HAFIZAH BT ABDUL HADI D20091035072 NAME SITI NOR AMIRA BT MOHMAD NOOR D20091035073

DATE LECTURER

22 NOVEMBER 2011 DR SYED ABDUL MALIK