Professional Documents
Culture Documents
Prof. Ming C. Wu
Spring 2007
19
q := 1.6 10
10
ni := 10 cm
14 F
0 := 8.854 10
Vth := 0.026V
s := 11.7 0
cm
ox := 3.9 0
VA
VB
P+
N+
VC
VD
N+
P+
N+ Poly
VD
VE
P+
N+
P+ Poly
N-type Well
(N=1017
cm-3)
(b) VA should be connected to the most negative voltage, or -2V, and VE should be connected to
the most positive voltage, or 2V, so that the N-well is reverse-biased
(2) (a)
16
Nd := 10 cm
n := 60mV log
Na := Nd
Nd
ni
bi := n p
(b)
xd( Vd) :=
(c)
Emax :=
p := 60mV log
Na
ni
bi = 0.72 V
2 s ( bi Vd)
q
2 bi
xd( 0 )
Na
Nd
xd( 0 ) = 0.432 m
Emax = 3.335 10
6V
xd( 10V)
xd( 0 )
C_ratio = 3.859
(3) d := 20 0
(a)
16
td := 1nm
Nd := 10 cm
_n := 60mV log
_pp := 550 mV
Xd_max :=
Nd
_n = 0.36 V
ni
V_FB = 0.91 V
2 s ( 2 _n)
Xd_max = 0.305 m
q Nd
Qb_max := q Nd Xd_max
Cd :=
d
td
V_TH := V_FB 2 _n
Qb_max
V_TH = 0.187 V
Cd
( c)
Charge Density
3.31x10-6 C/cm2
1.6x10-3 C/cm3
tox
Position, x
Xd,max
= 3x10-5 cm
-3.36x10-6 C/cm2
(d) Since 0V < V_TH, the PMOS is in inversion
Qb := Qb_max
Qb = 4.885 10
8 C
Qb
cm
Qc := ( 0 V_TH) Cd
Xd_max
6 C
Qc = 3.316 10
cm
6 C
Qg := ( Qb + Qc)
Qg = 3.365 10
cm
Cd = 1.771 10
cm
3 C
= 1.6 10
cm
nCox := 100
(4)
pCox := 50
V
V_THn := 1V
n := 0.05V
V
V_THp := 1 V
Vdd := 5V
W_over_L := 10
(a) Id := 100A
Vx := 4V
Given
pCox
Id =
W_over_L [ ( Vdd Vx)
2
V_THp ) ]
Vb := Find( Vx)
Vb = 3.368 V
Vy := 2V
Given
nCox
2
Id =
W_over_L ( Vy V_THn)
2
Vg := Find( Vy)
(b)
(c)
Vg = 1.447 V
g_m1 :=
2 pCox W_over_L Id
g_m1 = 3.162 10
r0_1 :=
r0_1 = 1 10
4 1
p Id
g_m2 :=
2 nCox W_over_L Id
g_m2 = 4.472 10
r0_2 :=
r0_2 = 2 10
4 1
n Id
Av := g_m2 r0_1
+ r0_2
Av = 74.536
R_out := r0_1
+ r0_2
R_out = 1.667 10
Vout_max = 4.368 V
Vout_min = 0.447 V
R_L = 3.152 10
p := 0.01V
Av := g_m2 R_L
Rout := R_L
(g)
+ r0_2
+ r0_2
Av = 1.388
Rout = 3.103 10
Vx := 2.5V
Given
pCox
2
nCox
2
W_over_L ( Vy V
V_THn) ( 1 + n Vx)
2