2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier: Features

2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier
October 2011

Features
This device is designed for general purpose amplifier and switching applications at collector currents of 10A to 100 mA.
2N3906
MMBT3906
C C
PZT3906
E TO-92 EBC SOT-23

Mark:2A
E C SOT-223 B
Absolute Maximum Ratings*

Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
Ta = 25C unless otherwise noted
Parameter
Value
-40 -40 -5.0 -200 -55 to +150
Units
V V V mA C
Collector Current - Continuous Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJC RJA
Parameter
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max.
2N3906 625 5.0 83.3 200 357 125 *MMBT3906 350 2.8 **PZT3906 1,000 8.0
Units
mW mW/C C/W C/W
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06". ** Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
2011 Fairchild Semiconductor Corporation 2N3906 / MMBT3906 / PZT3906 Rev. B0 1
www.fairchildsemi.com
Electrical Characteristics
Symbol
OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX hFE
Parameter
Test Condition
Min.
-40 -40 -5.0
Max.
Units
V V V
Collector-Emitter Breakdown Voltage* IC = -1.0mA, IB = 0 Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current DC Current Gain* IC = -10A, IE = 0 IE = -10A, IC = 0 VCE = -30V, VBE = -3.0V VCE = -30V, VBE = -3.0V IC = -0.1mA, VCE = -1.0V IC = -1.0mA, VCE = -1.0V IC = -10mA, VCE = -1.0V IC = -50mA, VCE = -1.0V IC = -100mA, VCE = -1.0V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, VCE = -20V, f = 100MHz VCB = -5.0V, IE = 0, f = 100kHz VEB = -0.5V, IC = 0, f = 100kHz IC = -100A, VCE = -5.0V, RS = 1.0k, f = 10Hz to 15.7kHz VCC = -3.0V, VBE = -0.5V IC = -10mA, IB1 = -1.0mA VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA
-50 -50 60 80 100 60 30
nA nA
ON CHARACTERISTICS
300
VCE(sat) VBE(sat)
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
-0.25 -0.4 -0.65 -0.85 -0.95
V V V V MHz
SMALL SIGNAL CHARACTERISTICS fT Cobo Cibo NF Current Gain - Bandwidth Product Output Capacitance Input Capacitance Noise Figure 250 4.5 10.0 4.0
pF pF dB
SWITCHING CHARACTERISTICS td tr ts tf Delay Time Rise Time Storage Time Fall Time 35 35 225 75 ns ns ns ns
* Pulse Test: Pulse Width 300s, Duty Cycle 2.0%
Ordering Information
Part Number
2N3906BU 2N3906TA 2N3906TAR 2N3906TF 2N3906TFR MMBT3906 PZT3906
Marking
2N3906 2N3906 2N3906 2N3906 2N3906 2A 3906
Package
TO-92 TO-92 TO-92 TO-92 TO-92 SOT-23 SOT-223
Packing Method
BULK AMMO AMMO TAPE REEL TAPE REEL TAPE REEL TAPE REEL
Pack Qty
10000 2000 2000 2000 2000 3000 2500
Typical Performance Characteristics
V CESAT - COLLECTOR EMITTER VOLTAGE (V)
h F E - TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain vs Collector Current

250
V CE = 1 .0V
125 C
Collector-Emitter Saturation Voltage vs Collector Current

0.3 0.25 0.2 0.15 0.1
125C 25 C
= 10
200
150
25 C
100
- 40 C
0.05 0
- 40 C
50 0.1
0.2
0.5 1 2 5 10 20 I C - COLLECTOR CURRE NT (mA)
50
100
10 100 I C - COLLECTOR CURRENT (mA)
200
VBE( ON)- BASE EMITTER ON VOLTAGE (V)
V BESAT - BASE EM ITTE R VOLTAGE (V)
Base-Emitter Saturation Voltage vs Collector Current

1 0.8
25 C
Base Emitter ON Voltage vs Collector Current

1 0.8
- 40 C
= 10
- 40 C
0.6 0.4 0.2 0
125 C
0.6 0.4 0.2 0 0.1
25 C 125 C
V CE = 1V
10 100 I C - COLLECTOR CURRE NT (mA)
200
1 10 I C - COLLECTOR CURRENT (mA)
25
Collector-Cutoff Current vs Ambient Temperature

I CBO - COLLE CTOR CURRENT (nA) 100 V 10
CB
Common-Base Open Circuit Input and Output Capacitance vs Reverse Bias Voltage
10
C obo
= 25V CAPACITANCE (pF)
8 6 4 2 0 0.1
C ibo
0.1
0.01 25
50 75 100 TA - AMBIE NT TEMP ERATURE ( C)
125
1 REVERSE BIAS VOLTAGE (V)
10
Typical Performance Characteristics (continued)
Noise Figure vs Frequency

6 V CE = 5.0V NF - NOISE FIGURE (dB) 5 4 3 2 1 0 0.1
Noise Figure vs Source Resistance

12 NF - NOISE FIGURE (dB) 10 8 6 4 2 0 0.1
I C = 1.0 mA
V CE = 5.0V f = 1.0 kHz
A I C = 100 A, R S = 200
I C = 1.0 mA, R S = 200
A I C = 100 A
A I C = 100 A, R S = 2.0 k k
1 10 f - FREQUENCY (kHz) 100
1 10 (k) R S - SOURCE RESISTANCE ( k )
100
Switching Times vs Collector Current

500
ts
Turn On and Turn Off Times vs Collector Current

500
t off Ic t on I B1 = 10
100 TIME (nS)
100 TIME (nS)
tf
t on
10 I B1 = I B2 =
Ic 10
tr
10
VBE(OFF) = 0.5V
t off I = I = B1 B2 Ic 10
td
10 I C - COLLECTOR CURRENT (mA)
100
1 I
10 - COLLECTOR CURRENT (mA)
100
Power Dissipation vs Ambient Temperature

1
PD - POWER DISSIPATION (W)
SOT-223
0.75
TO-92
0.5
SOT-23
0.25
25
50 75 100 TEMPERATURE (o C)
125
150
Typical Performance Characteristics (continued)
_ 4
Voltage Feedback Ratio

100 10
Input Impedance
(k) h ie - INPUT IMPEDANCE (k )
VCE = 10 V f = 1.0 kHz
h re - VOLTAGE FEEDBACK RATIO (x10
10
1 0.1
10
0.1 0.1
10
Output Admittance
h oe - OUTPUT ADMITTANCE ((nhos) mhos)
1000 V CE = 10 V f = 1.0 kHz
h fe - CURRENT GAIN 1000 500
Current Gain
V CE = 10 V f = 1.0 kHz
200 100 50
100
20
10 0.1
10
10 0.1
10
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Rev. I57
Fairchild Semiconductor Corporation

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