Power Transistors

2SB950, 2SB950A
Silicon PNP epitaxial planar type Darlington
4.20.2

For power amplification and switching Complementary to 2SD1276 and 2SD1276A

0.70.1

10.00.2 5.50.2 2.70.2

4.20.2

Unit: mm

7.50.2

s Features
q q q

High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25C)
Ratings 60 80 60 80 5 8 4 40 2 150 55 to +150 Unit V

16.70.3

3.10.1

14.00.5

s Absolute Maximum Ratings

Parameter Collector to base voltage Collector to 2SB950 2SB950A 2SB950 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg

4.0

1.40.1

1.30.2

Solder Dip

0.5 0.1 0.80.1

+0.2

2.540.25 5.080.5 1 2

emitter voltage 2SB950A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature

V V A A W C C
B

1:Base 2:Collector 3:Emitter TO220 Full Pack Package(a)

Internal Connection
C

s Electrical Characteristics
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB950 2SB950A 2SB950 2SB950A 2SB950 2SB950A

(TC=25C)
Symbol ICBO ICEO IEBO VCEO hFE1 hFE2 VBE VCE(sat)1 VCE(sat)2 fT ton tstg tf
*

Conditions VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 3V, IC = 0.5A VCE = 3V, IC = 3A VCE = 3V, IC = 3A IC = 3A, IB = 12mA IC = 5A, IB = 20mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 3A, IB1 = 12mA, IB2 = 12mA, VCC = 50V

min

typ

max 200 200 500 500 2

Unit A A mA V

60 80 1000 2000 10000 2.5 2 4 20 0.3 2 0.5

Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h FE2

V V V MHz s s s

Rank classification
Q P 2000 to 5000 4000 to 10000

Rank hFE2

Power Transistors
PC Ta
50 6 (1) TC=Ta (2) With a 100 100 2mm Al heat sink (3) With a 50 50 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25C 5 IB=3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA 3 0.4mA 0.3mA 0.2mA 1

2SB950, 2SB950A
IC VCE
10 VCE=3V

IC VBE

Collector power dissipation PC (W)

Collector current IC (A)

Collector current IC (A)

40

30

6 TC=100C 4

25C 25C

(1) 20

10 (3) (4) 0 0 20 40 60

(2)

0 80 100 120 140 160 0 1 2 3 4 5

0 0 0.8 1.6 2.4 3.2

Ambient temperature Ta (C)

Collector to emitter voltage VCE (V)

Base to emitter voltage VBE (V)

VCE(sat) IC
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=250 30 10 3 1 TC=100C 25C 25C 106

hFE IC
10000

Cob VCB
Collector output capacitance Cob (pF)
VCE=3V IE=0 f=1MHz TC=25C

Forward current transfer ratio hFE

3000 1000 300 100 30 10 3 1 0.1 0.3

105

TC=100C 104

25C

0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3

25C 103

102 1 3 10 0.01 0.03 0.1 0.3 1 3 10

10

30

100

Collector current IC (A)

Collector current IC (A)

Collector to base voltage VCB (V)

Area of safe operation (ASO)

100 30 103 Non repetitive pulse TC=25C ICP IC t=1ms 10ms DC

Rth(t) t
(1) Without heat sink (2) With a 100 100 2mm Al heat sink (1)

Thermal resistance Rth(t) (C/W)

Collector current IC (A)

102

10 3 1

10

(2)

0.3 0.1 0.03 0.01 1

2SB950A

101

2SB950

10

30

100 300 1000

102 104

103

102

101

10

102

103

104

Collector to emitter voltage VCE

(V)

Time t (s)