CNY21

CNY21N
Optocoupler with Phototransistor Output
Description
The CNY21N consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 4-lead plastic dual inline package. The single components are mounted on one leadframe in the opposite position, providing a fixed distance between input and output for highest safety requirements of > 3 mm.
95 10533

Application
Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):

D For application class I - IV at mains voltage 300 V D For application class I - IV at mains voltage 600 V D For application class I - III at mains voltage 1000 V
according, to VDE 0884, table 2, suitable for: Switch-mode power supplies, computer peripheral interface, microprocessor system interface, line receiver.

These couplers perform safety functions according to the following equipment standards:

D VDE 0884 D D D D D D
Optocoupler providing protective separation VDE 0804 Telecommunication apparatus and data processing VDE 0805/IEC 950/EN 60950 Office machines (applied for reinforced isolation for mains voltage 400 VRMS) VDE 0860/lEC 65 Safety for mains operated electronic and related household apparatus VDE 0700/IEC 335 Household equipment VDE 0160 Electronic equipment for electrical power installation VDE 0750/IEC 601 Medical equipment

Pin Connection
A (+) C

C ()

TELEFUNKEN Semiconductors Rev. A1, 11-Jun-96

95 10850

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CNY21N
Features
According to VDE 0884 D Rated impulse voltage (transient overvoltage) VIOTM = 8 kV peak

D Isolation test voltage (partial discharge test voltage)

Vpd = 2.8 kV peak

D Rated isolation voltage (RMS includes DC)

VIOWM = 1000 VRMS (1450 V peak)

D D D D D

Thickness through insulation > 3 mm Isolation materials according to UL 94 Pollution degree 2 (DIN/VDE 0110) Climatic classification 55/085/21 (IEC 68 part 1) Further approvals: BS 415, BS 7002, SETI: IEC 950, UL 1577: File no: E 76222 capacity of typical 0.3 pF, high Common Mode Rejection

D Rated recurring peak voltage (repetitive)

VIORM = 1000 VRMS

D Special construction: therefore extra low coupling D Low temperature coefficient of CTR D Current Transfer Ratio (CTR) of typical 60%

D Creeping current resistance according to

VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275

Absolute Maximum Ratings

Input (Emitter)
Parameters Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM Ptot Tj Value 5 50 1.5 120 100 Unit V mA A mW C

tp 10 ms Tamb 25C

Output (Detector)
Parameters Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions Symbol VCEO VECO IC ICM Ptot Tj Value 32 5 50 100 130 100 Unit V V mA mA mW C

tp/T = 0.5, tp 10 ms Tamb 25C

Coupler
Parameters AC isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature Test Conditions Tamb 25C Symbol VIO Ptot Tamb Tstg Tsd Value 8.2 250 55 to +85 55 to +100 260 Unit kV mW C C C

2 mm from case t 10 s

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CNY21N
Maximum Safety Ratings
Input (Emitter)
Parameters Forward current Test Conditions Symbol Isi Value 120 Unit mA

1)

(according to VDE 0884)

Output (Detector)
Parameters Power dissipation Test Conditions Tamb 25C Symbol Psi Value 250 Unit mW

Coupler
Parameters Rated impulse voltage Safety temperature
1)

Test Conditions

Symbol VIOTM Tsi

Value 8 180

Unit kV C

This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications.

Derating Diagram
250 225 200 mA ( mA ) 175 150 125 100 75 50 25 0 0
95 10888

Psi (mW)

Isi (mA)

25

50

75

100 125 150 175 200 Tamb ( C )

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CNY21N
Electrical Characteristics
Tamb = 25C

Input (Emitter)
Parameters Forward voltage Breakdown voltage Junction capacitance Test Conditions IF = 50 mA IR = 100 mA VR = 0, f = 1 MHz Symbol VF V(BR) Cj Min. 5 50 Typ. 1.25 Max. 1.6 Unit V V pF

Output (Detector)
Parameters Collector emitter breakdown voltage Emitter collector breakdown voltage Collector emitter cut-off current Test Conditions IC = 1 mA IE = 100 mA VCE = 20 V, If = 0 Symbol V(BR)CEO V(BR)ECO ICEO Min. 32 5 200 Typ. Max. Unit V V nA

Coupler
Parameters AC isolation test voltage (RMS) Collector emitter saturation voltage Cut-off frequency Coupling capacitance IC/IF Test Conditions f = 50 Hz, t = 1 s IF = 10 mA, IC = 1 mA VCE = 5 V, IF = 5 mA, RL = 100 W f = 1 MHz IF = 10 mA, VCE = 5 V Symbol VIO VCEsat fc Ck CTR 170 0.3 0.6 Min. 8.2 Typ. Max. Unit kV V kHZ pF

0.3

0.25

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CNY21N
Switching Characteristics (Typical Values)
VS = 5 V Type yp CNY21N td[ms] 2.6 tr[ms] 2.4 RL = 100 W (see figure 1) RL = 1 kW (see figure 2) ton[ms] ts[ms] tf[ms] toff[ms] IC[mA] ton[ms] toff[ms] IF[mA] 5.0 0.3 2.7 3.0 5 11 13.5 20

IF 0 R G = 50 W tp T = 0.01

IF

+5V IC = 5 mA; Adjusted through input amplitude

t p = 50 ms Channel I Oscilloscope Channel II 50 W

95 10900

100 W

RL CL

w 1 MW v 20 pF

Figure 1. Test circuit, non-saturated operation

IF 0 R G = 50 W tp T = 0.01

IF = 20 mA

+5V IC

t p = 50 ms Channel I Oscilloscope Channel II 50 W 1 kW RL CL

w 1 MW v 20 pF

95 10901

Figure 2. Test circuit, saturated operation

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CNY21N
Insulation Rated Parameters (according to VDE 0884)
Parameters Routine test Partial discharge Lot test (sample test) test voltage Test Conditions 100%, ttest = 1 s tTr = 10 s, tt t = 60 s test (see figure 3) VIO = 500 V VIO = 500 V, Tamb = 100C VIO = 500 V, Tamb = 180C
(construction test only)

Symbol Vpd VIOTM Vpd RIO RIO RIO

Min. 2.8 8 2.2 1012 1011 109

Typ.

Max.

Unit kV kV kV

W W W

Insulation resistance

VIOTM V t1, t2 = 1 to 10 s t3, t4 = 1 s

Vpd VIOWM VIORM

0 t3 t1
94 9225

ttest = 60 s tstress = 62 s

t4 t

t2 tTr =10 s

Figure 3. Test pulse diagram for sample test according to DIN VDE 0884

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CNY21N
Typical Characteristics (Tamb = 25C, unless otherwise specified)
200 P tot Total Power Dissipation ( mW ) 160 10000 ICEO Collector Dark Current, with open Base ( nA ) VCE=20V IF=0

1000

120 Coupled Device 80 Phototransistor IR-Diode

100

40 0 0

10

1 25 50 75 100
95 11005

25

50

75

100

95 11003

Tamb Ambient Temperature ( C )

Tamb Ambient Temperature ( C )

Figure 4. Total Power Dissipation vs. Ambient Temperature

1000.0

Figure 7. Collector Dark Current vs. Ambient Temperature

100 IC Collector Current ( mA ) VCE=5V 10

I F Forward Current ( mA )

100.0

10.0

1.0

0.1

0.1 0
96 11862

0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF Forward Voltage ( V )
95 11006

0.1

10

100

IF Forward Current ( mA )

Figure 5. Forward Current vs. Forward Voltage

1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 30 20 10 0 10 20 30 40 50 60 70 80 Tamb Ambient Temperature ( C ) IC Collector Current ( mA ) VCE=5V IF=10mA

Figure 8. Collector Current vs. Forward Current

100 IF=50mA 20mA 10 10mA 5mA

CTR rel Relative Current Transfer Ratio

2mA 1

1mA 0.1 0.1

95 11007

10

100

96 11909

VCE Collector Emitter Voltage ( V )

Figure 6. Rel. Current Transfer Ratio vs. Ambient Temperature

Figure 9. Collector Current vs. Collector Emitter Voltage

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CNY21N
Typical Characteristics (Tamb = 25C, unless otherwise specified)
V CEsat Collector Emitter Saturation Voltage ( V ) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1 10 IC Collector Current ( mA ) 10% 100
95 10994

CTR=50%

t on / t off Turn on / Turn off Time ( m s )

1.0

20

16

ton

12 toff 8 4 0 0 5 10 15 20 IF Forward Current ( mA ) Saturated Operation VS=5V RL=1kW

20%

96 11910

Figure 10. Collector Emitter Sat. Voltage vs. Collector Current

1000 CTR Current Transfer Ratio ( % )

Figure 12. Turn on / off Time vs. Forward Current

20 Non Saturated Operation VS=5V RL=100W

t on / t off Turn on / Turn off Time ( m s )

15

100

10 ton 5 toff 0

10

VCE=5V 1 0.1 1 10 100

0
95 10993

10

95 11009

IF Forward Current ( mA )

IC Collector Current ( mA )

Figure 11. Current Transfer Ratio vs. Forward Current

Figure 13. Turn on / off Time vs. Collector Current

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CNY21N
Dimensions in mm
20.0 19.6 19.8 19.6

1.8 5.1 4.5

3.7 3.5

1.54 0.58 0.48 15.24 A C

3.3 0.35 0.25 8.22 7.42

6.4 6.2

95 10948

technical drawings according to DIN specifications

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Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

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