FDW2503N

September 2000

FDW2503N
Dual N-Channel 2.5V Specified PowerTrench MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductors advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).

Features
5.5 A, 20 V. RDS(ON) = 0.021 @ VGS = 4.5 V RDS(ON) = 0.035 @ VGS = 2.5 V

Extended VGSS range (12V) for battery applications Low gate charge High performance trench technology for extremely low RDS(ON) Low profile TSSOP-8 package

Applications
Load switch Motor drive DC/DC conversion Power management

G2 S2 S2 D2 G1 S1 S1 D1
Pin 1

1 2 3 4

8 7 6 5

TSSOP-8

Absolute Maximum Ratings

Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation

TA=25oC unless otherwise noted

Parameter

Ratings
20 12
(Note 1a)

Units
V V A W C

5.5 30 1.0 0.6 -55 to +150

(Note 1a) (Note 1b)

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)

125 208

C/W

Package Marking and Ordering Information

Device Marking 2503N
2000 Fairchild Semiconductor Corporation

Device FDW2503N

Reel Size 13

Tape width 12mm

Quantity 3000 units

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FDW2503N

Electrical Characteristics
Symbol
BVDSS BVDSS ===TJ IDSS IGSSF IGSSR VGS(th) VGS(th) ===TJ RDS(on)

TA = 25C unless otherwise noted

Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage, Forward GateBody Leakage, Reverse
(Note 2)

Test Conditions
VGS = 0 V, ID = 250 A ID = 250 A,Referenced to 25C VDS = 16 V, VGS = 12 V, VGS = 12 V VGS = 0 V VDS = 0 V VDS = 0 V

Min
20

Typ

Max Units
V

Off Characteristics
14 1 100 100 0.6 0.8 3.2 17 24 23 30 26 1082 277 130 8 8 24 8 VDS = 10 V, VGS = 4.5 V ID = 5.5 A, 12 2 3 0.83
(Note 2)

mV/C A nA nA V mV/C 21 35 34 A S pF pF pF 20 27 38 16 17 ns ns ns ns nC nC nC A V m

On Characteristics

Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)

VDS = VGS, ID = 250 A ID = 250 A,Referenced to 25C ID = 5.5 A VGS = 4.5 V, ID = 4.2 A VGS = 2.5 V, VGS = 4.5 V, ID = 5.5A, TJ=125C VGS = 4.5 V, VDS = 5 V, VDS = 5 V ID = 5.5 A

1.5

ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD

Dynamic Characteristics
VDS = 10 V, f = 1.0 MHz V GS = 0 V,

Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge

VDD = 10 V, VGS = 4.5 V,

ID = 1 A, RGEN = 6

DrainSource Diode Characteristics and Maximum Ratings

Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward Voltage VGS = 0 V, IS = 0.83 A 0.7 1.2

Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA is 125C/W (steady state) when mounted on a 1 inch copper pad on FR-4.

b) RJA is 208 C/W (steady state) when mounted on a minimum copper pad on FR-4.

2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%

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Typical Characteristics

30 25 ID, DRAIN CURRENT (A) 20 15 10 5 0 0

2.5 3.5V 3.0V 2.5V 2.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V

VGS = 2.0V

1.5

2.5V 3.0V 3.5V 4.0V

4.5V

0.5 0.5 1 1.5 2 2.5 3 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.

0.07 RDS(ON), ON-RESISTANCE (OHM)

1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE

ID = 5.5A VGS = 4.5V

ID = 2.8 A 0.06 0.05 0.04 TA = 0.03 0.02 0.01 0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 125oC

1.4

1.2

0.8

TA = 25oC

0.6 -50 -25 0 25 50 75 100

o

125

150

TJ, JUNCTION TEMPERATURE ( C)

Figure 3. On-Resistance Variation with Temperature.

30 25 ID, DRAIN CURRENT (A) 125oC 20 15 10 5 0 0.5 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 25 C
o

Figure 4. On-Resistance Variation with Gate-to-Source Voltage.

100 IS, REVERSE DRAIN CURRENT (A) VGS = 0V 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125oC 25oC -55oC

VDS = 5V

TA = -55oC

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
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Typical Characteristics

5 VGS, GATE-SOURCE VOLTAGE (V) ID = 5.5A 4 15V 3 VDS = 5V 10V CAPACITANCE (pF)

1800 1500 CISS 1200 900 600 300 0 0 2 4 6 8 10 12 14 0 4 8 12 16 20 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) COSS CRSS f = 1MHz VGS = 0 V

Figure 7. Gate Charge Characteristics.

100 RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 1s 1 VGS = 4.5V SINGLE PULSE RJA = 208oC/W TA = 25oC 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 10s DC 0.1 10ms 100ms

Figure 8. Capacitance Characteristics.

50 P(pk), PEAK TRANSIENT POWER (W)

1ms

40

SINGLE PULSE RJA = 208C/W TA = 25C

30

20

10

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum Power Dissipation.

r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

1
D = 0.5 0.2

0.1

0.1 0.05 0.02 0.01

RJA(t) = r(t) + RJA RJA = 208 C/W P(pk) t1

SINGLE PULSE

0.01

t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2

0.001 0.0001

0.001

0.01

0.1 t1, TIME (sec)

10

100

1000

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.

FDW2503N Rev. D (W)

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series
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OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER

SMART START STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFET

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STAR*POWER is used under license

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Preliminary

First Production

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Full Production

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Not In Production

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Rev. H4

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