Professional Documents
Culture Documents
May 2000
Rev. A, May 2000
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
Rev. A, May 2000
EIericaI CharacteristicsT
= -11.5A, V
= -50V, R
= 25 , Starting T
= 25C
3. l
BV
Starting T
= 25C
4. Pulse Test : Pulse width 300s, Duty cycle 2%
5. Essentially independent of operating temperature
SymboI Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0 V, l
D
= -250 A -200 -- -- V
BV
DSS
/ T
J
Breakdown Voltage Temperature
Coefficient
l
D
= -250 A, Referenced to 25C -- - -- V/C
l
DSS
Zero Gate Voltage Drain Current
V
DS
= -200 V, V
GS
= 0 V -- -- -1 A
V
DS
= -160 V, T
C
= 125C -- -- -10 A
l
GSSF
Gate-Body Leakage Current, Forward V
GS
= -30 V, V
DS
= 0 V -- -- -100 nA
l
GSSR
Gate-Body Leakage Current, Reverse V
GS
= 30 V, V
DS
= 0 V -- -- 100 nA
On Characteristics
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, l
D
= -250 A -3.0 -- -5.0 V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= -10 V, l
D
= -5.75 A -- 0.36 0.47
g
FS
Forward Transconductance V
DS
= -40 V, l
D
= -5.75 A -- 6.4 -- S
Dynamic Characteristics
C
iss
lnput Capacitance
V
DS
= -25 V, V
GS
= 0 V,
f = 1.0 MHz
-- 920 1200 pF
C
oss
Output Capacitance -- 190 250 pF
C
rss
Reverse Transfer Capacitance -- 30 40 pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= -100 V, l
D
= -11.5 A,
R
G
= 25
-- 20 50 ns
t
r
Turn-On Rise Time -- 195 400 ns
t
d(off)
Turn-Off Delay Time -- 40 90 ns
t
f
Turn-Off Fall Time -- 60 130 ns
Q
g
Total Gate Charge
V
DS
= -160 V, l
D
= -11.5 A,
V
GS
= -10 V
-- 31 40 nC
Q
gs
Gate-Source Charge -- 8.1 -- nC
Q
gd
Gate-Drain Charge -- 16 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
l
S
Maximum Continuous Drain-Source Diode Forward Current -- -- -11.5 A
l
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- -46 A
V
SD
Drain-Source Diode Forward Voltage V
GS
= 0 V, l
S
= -11.5 A -- -- -5.0 V
t
rr
Reverse Recovery Time V
GS
= 0 V, l
S
= -11.5 A,
dl
F
/ dt = 100 A/s
-- 180 -- ns
Q
rr
Reverse Recovery Charge -- 1.44 -- C
2000 Fairchild Semiconductor lnternational
= -100V
V
= -40V
V
= -160V
Note : l
D
= -11.5 A
-
V
G
S
,
G
a
t
e
-
S
o
u
r
c
e
V
o
l
t
a
g
e
[
V
]
Q
C
a
p
a
c
i
t
a
n
c
e
[
p
F
]
-V
-
l
D
R
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
[
A
]
-V
Note : T
J
= 25
V
= - 20V
V
= - 10V
R
D
S
(
o
n
)
[
]
,
D
r
a
i
n
-
S
o
u
r
c
e
O
n
-
R
e
s
i
s
t
a
n
c
e
-
-
l
D
,
D
r
a
i
n
C
u
r
r
e
n
t
[
A
]
-V
-
l
D
,
D
r
a
i
n
C
u
r
r
e
n
t
[
A
]
-V
J
C (
t
)
,
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
t
, S q u a r e W a v e P u ls e D u r a t i o n [ s e c ]
25 50 75 100 125 150
0
2
4
6
8
10
12
-
l
D
,
D
r
a
i
n
C
u
r
r
e
n
t
[
A
]
T
, Case Temperature []
10
10
10
10
10
10
10
DC
10 ms
1 ms
100s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
-
l
D
,
D
r
a
i
n
C
u
r
r
e
n
t
[
A
]
-V
R
D
S
(
O
N
)
,
(
N
o
r
m
a
l
i
z
e
d
)
D
r
a
i
n
-
S
o
u
r
c
e
O
n
-
R
e
s
i
s
t
a
n
c
e
T
, Junction Temperature [
C]
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
Notes:
1. V
GS
=0V
2. I
D
=-250A
-
B
V
D
S
S
,
(
N
o
r
m
a
l
i
z
e
d
)
D
r
a
i
n
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
T
J
, Junction Temperature [
o
C]
TypicaI Characteristics (Continued)
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 7. Breakdown VoItage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 11. Transient ThermaI Response Curve
t
1
P
DM
t
2
2000 Fairchild Semiconductor lnternational
0
.
1
0
1
5
.
9
0
0
.
2
0
1
0
.
0
8
0
.
3
0
1
8
.
9
5
M
A
X
.
(
1
.
7
0
)
(
3
.
7
0
)
(
3
.
0
0
)
(
1
.
4
6
)
(
1
.
0
0
)
(
4
5
)
9
.
2
0
0
.
2
0
1
3
.
0
8
0
.
2
0
1
.
3
0
0
.
1
0
1.30
+0.10
0.05
0.50
+0.10
0.05
2.54TYP
[2.54 0.20]
2.54TYP
[2.54 0.20]
FASTr
GTO
HiSeC
ISOPLANAR
MICROWIRE
POP
PowerTrench
QFET
QS
Quiet Series
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
UHC
VCX
DISCLAIMER
FAlRCHlLD SEMlCONDUCTOR RESERVES THE RlGHT TO MAKE CHANGES WlTHOUT FURTHER NOTlCE TO ANY
PRODUCTS HERElN TO lMPROVE RELlABlLlTY, FUNCTlON OR DESlGN. FAlRCHlLD DOES NOT ASSUME ANY
LlABlLlTY ARlSlNG OUT OF THE APPLlCATlON OR USE OF ANY PRODUCT OR ClRCUlT DESCRlBED HERElN;
NElTHER DOES lT CONVEY ANY LlCENSE UNDER lTS PATENT RlGHTS, NOR THE RlGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAlRCHlLD'S PRODUCTS ARE NOT AUTHORlZED FOR USE AS CRlTlCAL COMPONENTS lN LlFE SUPPORT
DEVlCES OR SYSTEMS WlTHOUT THE EXPRESS WRlTTEN APPROVAL OF FAlRCHlLD SEMlCONDUCTOR
lNTERNATlONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance lnformation Formative or ln
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No ldentification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not ln Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. A, January 2000