Nano-RAM is a type of random access memory based on the mechanical position of carbon nano tubes deposited on a chip-like substrate. The 0 or 1 is determined by the tube's physical state: up with high resistance,or down and grounded. Nano-RAM works by balancing the ridges on silicon. Under differing electric charges, the tubes can be physically swung into one or two positions representing one and zeros.
Nano-RAM is a type of random access memory based on the mechanical position of carbon nano tubes deposited on a chip-like substrate. The 0 or 1 is determined by the tube's physical state: up with high resistance,or down and grounded. Nano-RAM works by balancing the ridges on silicon. Under differing electric charges, the tubes can be physically swung into one or two positions representing one and zeros.
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Nano-RAM is a type of random access memory based on the mechanical position of carbon nano tubes deposited on a chip-like substrate. The 0 or 1 is determined by the tube's physical state: up with high resistance,or down and grounded. Nano-RAM works by balancing the ridges on silicon. Under differing electric charges, the tubes can be physically swung into one or two positions representing one and zeros.
Copyright:
Attribution Non-Commercial (BY-NC)
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Download as DOCX, PDF, TXT or read online from Scribd
Nano-RAM , is a proprietary computer memory technology from the company Nantero.
NRAM (Nano RAM) is a type of random access memory based on the mechanical position of carbon nano tubes deposited on a chip-like substrate. In theory the small size of the nanotubes allows for very high density memories. NRAM uses carbon nanotubes for the bit cells, and the 0 or 1 is determined by the tube’s physical state: up with high resistance ,or down and grounded. NRAM is a memory with actual moving parts, with dimensions measured in nanometers.Its carbon nanotube based technology makes advantage of vaanderwaals force to create basic on off junctions of a bit.Vaaderwaaals forces interaction between atoms that enable noncovalant binding. They rely on electron attraction that arise only at nano scale levels as a force to be reckoned with. The company is using this property in its design to integrate nanosacle material property with established cmos fabrication technique. NRAM works by balancing the ridges on silicon. Under differing electric charges, the tubes can be physically swung into one or two positions representing one and zeros. Because the tubes are very small-under a thousands of time-this movement is very fast and needs very little power, and the tubes are a thousand times conductive as copper it is very to sense to read back the data. The technology work by changing the charge placed on a latticework of crossed nanotube. By altering the charges, engineers can cause the tubes to bind together or separate, creating ones and zeros that form the basis of computer memory. The chip will stay in the same state until making another change in the electric field.