IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, VOL. 58, NO.

12, DECEMBER 2011

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Modulation for Three-Phase Transformerless Z-Source Inverter to Reduce Leakage Currents in Photovoltaic Systems
Fabricio Bradaschia, Student Member, IEEE, Marcelo C. Cavalcanti, Member, IEEE, Pedro E. P. Ferraz, Francisco A. S. Neves, Member, IEEE, Euzeli C. dos Santos, Jr., Member, IEEE, and Joo H. G. M. da Silva

AbstractIn this paper, a modied Z-source inverter (ZSI) with specic modulation techniques is proposed to reduce leakage currents in three-phase transformerless photovoltaic (PV) systems. The new topology only requires an additional fast-recovery diode when compared with the original structure. On the other hand, the pulsewidth modulation technique is entirely modied in order to reduce the leakage currents through the conduction path. Simulation results for the three-phase transformerless PV system operating in two cases, i.e., connected to a grid and connected to a grounded RL load, are presented. Experimental results of leakage currents in three-phase ZSIs connected to a RL load are obtained to validate the theoretical and simulation models. Index TermsEnergy conversion, photovoltaic (PV) power systems, pulsewidth-modulated power converters.

I. I NTRODUCTION HE distributed generation emerged as a way to integrate different power plants for increasing the reliability, reducing emissions, and providing additional power quality benets. The photovoltaic (PV) modules are particularly attractive as a renewable source for distributed generation systems due to their relatively small size, noiseless operation, and simple installation and the possibility to put them close to the user. Many topologies for PV systems have a dcdc converter with a high-frequency transformer that adjusts the inverter dc voltage and isolates the PV modules from the grid [1][3]. However, the conversion stages decrease the efciency and make the system more complex [4], [5]. The transformerless centralized conguration with one-stage technology uses only one inverter and a large number of PV modules connected in series, called strings, to generate sufcient voltage to connect to the grid [6].
Manuscript received October 13, 2010; revised December 21, 2010; accepted February 4, 2011. Date of publication February 17, 2011; date of current version September 20, 2011. This work was supported in part by the Conselho Nacional de Desenvolvimento Cientco e Tecnolgico-CNPq and in part by the Coordenao de Aperfeioamento de Pessoal de Nvel Superior-CAPES of Brazil. F. Bradaschia, M. C. Cavalcanti, P. E. P. Ferraz, and F. A. S. Neves are with the Department of Electrical Engineering, Federal University of Pernambuco, 50670-901 Recife-PE, Brazil (e-mail: fabricio.bradaschia@ ufpe.br; marcelo.cavalcanti@ufpe.br; pedroferraz@gmail.com; fneves@ ufpe.br). E. C. dos Santos Jr. and J. H. G. M. da Silva are with the Department of Electrical Engineering, Federal University of Campina Grande, 58109-900 Campina Grande-PB, Brazil (e-mail: euzeli@dee.ufcg.edu.br; joao.ufcg@gmail.com). Digital Object Identier 10.1109/TIE.2011.2116762

In PV systems formed by series modules connected to a conventional two-level inverter, the occurrence of partial shades and the mismatching of modules lead to a reduction of the generated power and, consequently, a reduction of the maximum power point voltage to a level not sufcient to make the energy ow from the PV array to the grid [7], [8]. Such problem can be overcome by using a conguration in which the voltage boost requirement is obtained by a Z-source inverter (ZSI) [9], [10]. The ZSI for grid-connected three-phase PV systems has been proposed by some authors [11], and the research works have shown that the number of switching components and the volume of the system can be reduced, decreasing the total cost [12]. However, there is not any work that discusses the problems of three-phase transformerless PV systems with ZSIs. The main disadvantage of topologies without transformers is the connection of the PV array to the grid without galvanic isolation, causing uctuations in the potential between the PV cells and the PV frame, which should be grounded to avoid risks of electric shock. These uctuations inject leakage currents through the ground path due to the ground parasitic capacitance, increasing radiated electromagnetic emissions, grid current distortions, and losses in the system [13]. Therefore, three-phase inverters are not suitable for transformerless PV applications due to high leakage currents generated by the conventional pulsewidth modulation (PWM) [14]. Some works show alternatives of PWM to reduce the amplitude of the common-mode voltage (CMV) in neutral-point-clamped inverters [15], [16], although, in those cases, the objective is not to keep the CMV constant, because they are not applied to PV systems. In order to reduce leakage currents present in transformerless PV systems (grid connected or stand alone with grounded load), it is necessary to maintain the CMV constant in the inverter, i.e., not having switchings. Therefore, in this paper, the ZSI with an additional fast-recovery diode (named ZSI-D), using specic PWM techniques that maintain the CMV constant, is proposed to reduce leakage currents. The maximum amplitude of the output voltages can reach high levels due to the boost characteristic of the ZSI, and thus, less PV modules in series are needed to connect the system to the grid without a transformer. Furthermore, a proper switching pattern is chosen in order to assure a reduced number of commutations, leading to reduced switching losses in the inverter. This paper is organized as follows. In Section II, the threephase ZSI-D is presented for transformerless PV systems.

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Fig. 2. Fig. 1. Three-phase ZSI-D to reduce leakage currents in transformerless gridconnected PV systems.

Common-mode circuit of the three-phase PV transformerless ZSI-D.

Substituting (1) and (2) in (3), it can be found that vN n = vP n vuN + vvN + vwN 3 vuN + vvN + vwN . = vP N 3 (4) (5)

In Section III, the CMV in ZSI and ZSI-D is discussed. In Section IV, modied PWM techniques are proposed for the ZSI-D topology, in order to reduce the switchings in the CMV. Simulated and experimental results for the three-phase ZSI and ZSI-D are presented in Section V, proving the reduction of the leakage currents in the proposed system. Conclusions are presented in Section VI. II. T HREE -P HASE M ODIFIED ZSI FOR T RANSFORMERLESS PV S YSTEMS In this section, a three-phase ZSI-D to reduce leakage currents in transformerless PV systems is proposed and the simplied common-mode circuit is analyzed. Fig. 1 shows the ZSI-D, where an impedance network consisting of two identical inductors and two identical capacitors is used to couple the PV array to the inverter switches. The difference between the traditional ZSI [9] and the proposed one is the additional fastrecovery diode (D2 ), which is used to guarantee the complete isolation of both terminals of the PV array from the inverter switches during the shoot-through states. Isolating the PV array during the shoot-through states, when uctuations occur in the potential between PV cells and grounded PV frame, practically eliminates the leakage currents. During the non-shoot-through states, a proper PWM technique should be used in order to maintain this PV potential constant. Without a transformer, there is a galvanic connection between grid and PV cells, and thus, a leakage current could appear. For the transformerless grid-connected system in Fig. 1, a resonant circuit is created if the PV frame is grounded [4], [17]. This resonant circuit includes PV array stray capacitances (CPV ), which are concentrated in both P and N terminals, lter inductances (Lf ) with their internal resistance (Rf ), and resistances between the ground connection of the PV frame and grid (Rg ). It is possible to express the leakage voltage (voltage between positive (P ) or negative (N ) dc bus and grounded neutral (n) vP n or vN n ) in terms of the inverter output voltages vN n = vkn vkN vP n = vkn vkP = vkn (vkN vP N ) (1) (2)

The CMV for the three-phase inverter can be calculated as [17] vCM = vuN + vvN + vwN . 3 (6)

Thus, it is possible to associate the leakage voltages vP n and vN n with the CMV in the inverter vN n = vCM vP n = vP N + vN n = vP N vCM . (7) (8)

Therefore, leakage currents can be attenuated through proper control of the CMV. As vP n is equal to vN n shifted by the constant value vP N , it is sufcient to calculate only vN n . The simplied common-mode circuit for the three-phase PV transformerless ZSI-D can be developed by using the steps discussed in [14], [17], and it is shown in Fig. 2. The diode D2 in the proposed ZSI-D allows the opening of the way of leakage currents during shoot-through states. Therefore, switchings in the CMV, during shoot-through states, have no effect on leakage currents. III. CMV IN THE M ODIFIED ZSI The space-vector PWM (SVPWM) is generally used to control the three-phase voltage-source inverter (VSI) switches. The eight possible combinations are composed of six active (V1 , V2 , V3 , V4 , V5 , and V6 ) and two zero (V0 and V7 ) voltage vectors (Fig. 3). In SVPWM, the plane is divided in six sectors, delimited by the active space vectors. The output reference voltage vector ( ) is composed, in average values, by the v active vectors that dene the sector where it is located and both zero vectors. The maximum amplitude of the output phase-to neutral voltages (V ) is vP N / 3 in the linear region (m 2/ 3 = 1.15). The modulation index is dened as m= 2V vP N (9)

where k = {u, v, w} (Fig. 1). For three-wire balanced loads, the following condition for the inverter voltages can be written: vun + vvn + vwn = 0. (3)

where V is the reference (desired) amplitude of the output phase-to-neutral voltages. In addition to the eight traditional switching states of a VSI, u v w the ZSI has seven shoot-through zero states (Vst , Vst , Vst , uv uw vw uvw Vst , Vst , Vst , and Vst ), during which both the upper

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Fig. 4. Equivalent circuit of the three-phase PV ZSI-D during the application of vector V1 .

where
Fig. 3. Output voltage space vectors of a three-phase inverter. TABLE I CORRESPONDING SPACE VECTORS FOR ALL COMBINATIONS OF THE ZSI S WITCHES

BB =

1 Tst /Tsw 1 st = 1 2Tst /Tsw 1 2st

(12)

is the voltage gain of the capacitors in the impedance network, st is the shoot-through duty cycle, and Tst is the shoot-through time interval during a switching cycle Tsw [9]. Therefore
odd vN n =

BB 2 3

vP N .

(13)

The voltage vN n in (13) has the same value for all odd active vectors (Vodd = {V1 , V3 , V5 }), since, for these vectors, one phase is connected to the impedance network through the upper switch and two phases through the lower switches. Using a similar procedure, it is possible to calculate the leakage voltage vN n for all even active vectors (Veven = {V2 , V4 , V6 })
even vN n =

BB + 1 3

vP N

(14)

and lower switches of one or multiple phase legs are turned on [18], totalizing 15 possible combinations. Table I presents the space vectors associated to the 15 possibilities of the ZSI switches (Fig. 1).

and for the zero vectors V0 and V7 , respectively

0 vN n = (BB 1)vP N , 7 vN n = BB vP N .

(15) (16)

A. CMV for Active and Zero Vectors Fig. 4 shows the ZSI-D during the application of vector V1 . In active and zero states, both diodes D1 and D2 are conducting and the ZSI-D delivers energy to the load. Using (4) in the equivalent circuit in Fig. 4 and considering vL1 = vL2 = vL and vC1 = vC2 = vC , the leakage voltage vN n can be calculated as vN n = (vP N + vL ) vP N vL + vL + vL = . 3 3 (10) B. CMV for Shoot-Through Vectors Fig. 5 shows the ZSI-D during the application of any shootthrough vector Vst . In shoot-through states, both diodes D1 and D2 are reverse biased and the impedance network becomes decoupled from the PV array. At the same time, the capacitors charge the inductors, representing the boost stage. Using (4) in the equivalent circuit in Fig. 5 and considering vL1 = vL2 = vL , vC1 = vC2 = vC , and vD1 = vD2 = vD , the leakage voltage vN n can be calculated as vN n = vL + vD + vL + vD + vL + vD 3 (17) (18)

In order to calculate the leakage voltage vN n , it is necessary to nd out the inductor voltage vL = vP N vC = vP N BB vP N = (1 BB )vP N (11)

vN n = (vL + vD ).

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Fig. 5. Equivalent circuit of the three-phase PV ZSI-D during the application of any shoot-through vector Vst . TABLE II COMMON-MODE AND LEAKAGE VOLTAGES FOR THE SPACE VECTORS IN THE ZSI-D TOPOLOGY

Fig. 6. Switching pattern and CMV in ZSI controlled by the MCB in sector I (Fig. 3).

In order to calculate the leakage voltage vN n , it is necessary to nd out the inductor voltage and the diode voltage vL = vC = BB vP N (1 2BB )vP N vP N 2vC = . vD = 2 2 Substituting (19) and (20) in (18), it can be found that vP N st . vN n = 2 (19) (20)

(21)

Using the values of vN n in (7) and (8), it is possible to determine the CMV (vCM ) and the leakage voltage vP n , respectively, for all space vectors. With the same approach for the ZSI-D topology, the CMV (vCM ) and the leakage voltages (vP n and vN n ) can be found in traditional ZSI topology. Table II summarizes those voltages in the ZSI-D topology. The ZSI topology presents the same voltages of the ZSI-D topology for active and zero vectors. Nevertheless, differently from the ZSID, the voltages for the shoot-through states Vst in ZSI are equal to the voltages of the zero vector V7 . IV. M ODULATION T ECHNIQUES FOR THE T RADITIONAL ZSI AND THE P ROPOSED ZSI-D A. Conventional Modulation Techniques for ZSI The ZSI was proposed in [9] with the objective of obtaining a buckboost converter by using only one stage of conversion. In the same paper, the rst modulation technique was proposed for the ZSI, being called in [18] as simple boost control. In simple boost control, the shoot-through time interval is kept constant (constant boost factor) and a simple sinusoidal PWM with

reduced modulation index is applied, leading to high voltage stress across the switches. In [19], a maximum boost control was proposed by using all the time intervals of the zero vectors to apply shoot through in ZSI. However, this control results in low-frequency ripples in inductor currents and capacitor voltages. A control method proposed in [18] achieves the maximum possible voltage gain without introducing low-frequency ripples in the impedance network. This maximum constant boost (MCB) technique can reduce the inductance and capacitance requirements of the ZSI, and it has been used by many authors to control the switches in ZSI. In the MCB, there are ve modulation curves: three output reference voltage signals and two shoot-through envelope signals. The MCB is based on carrier PWM control, but in this paper, the MCB is presented by using space-vector-based PWM control for better understanding of the CMV in ZSI. For example, in sector I (Fig. 3), the MCB uses the vectors uvw V0 , V1 , V2 , V7 , and Vst to synthesize the boost and the output reference voltages in ZSI, as shown in Fig. 6, and the CMV assumes four different values. It can be seen that, using MCB, the CMV will change eight times in each switching period. Considering the common-mode circuit of the ZSI (equal to Fig. 2 with a direct connection instead of the diode D2 ) and the CMV in Fig. 6, high spikes in the leakage currents are expected when a change occurs in the CMV, due to the capacitive nature of the equivalent circuit and its existent circulating path. B. Proposed Modulation Techniques to Reduce Leakage Currents in ZSI-D The objective of the proposed PWM techniques is to reduce the high-frequency components of the CMV, in order to reduce

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the axis, and a third equation for the sum of the three duty cycles v = 1 |V1 | 0.53 |V3 | 0.55 |V5 | (25) v = 23 3 |V3 | 23 5 |V5 | 1 = 1 + 3 + 5 . Solving the system of equations in (25) with |V1 | = |V3 | = |V5 | = 2vP N /3, it is possible to determine the duty cycles of the odd active vectors v T1 1 = Tsw = 1 + vP 3 N 3v v T3 (26) 3 = Tsw = 1 2vP N + 2vP N 3 3v v T5 5 = Tsw = 1 2vP N 2vP N 3 where Tj is the application time of odd active vector Vj , j is its associated duty cycle, and j = {1, 3 and 5}. Considering the following practical restriction for the duty cycles: 0 j 1 (27)

Fig. 7.

Output voltage space vectors for the OPWM in the three-phase ZSI-D.

leakage currents in the ZSI-D topology. One possible technique [called odd PWM (OPWM)] consists in using only odd active and one-leg shoot-through space vectors to compose the output reference voltages and to boost the PV voltage. Therefore, only the active vectors V1 , V3 , and V5 and the shoot-through vectors u v w Vst , Vst , and Vst are used. As can be seen in Table II, this technique guarantees the same CMV during the application of the odd active space vectors. During the shoot-through state, there is a change in the CMV, but the leakage currents do not have a path to circulate in the common-mode circuit (Fig. 2) due to the reverse-biased diodes D1 and D2 in the proposed ZSID topology. Therefore, the combination of the ZSI-D topology with the OPWM technique practically eliminates leakage currents in transformerless PV systems. In the OPWM, the plane is divided in three sectors, delimited by odd active space vectors. The output reference voltage vector ( ) is composed, in average values, by all three v odd active vectors, avoiding the zero vectors V0 and V7 , as can be seen in Fig. 7. We dene the output reference voltages as vun = V cos(wt) vvn = V cos wt 2 3 vwn = V cos wt + 2 . 3

it is possible to determine the maximum amplitude of the output phase-to-neutral voltages, which is equal to vP N /3 in the linear region (m 2/3 = 0.667). This value is 57.7% of the maximum amplitude that can be obtained with SVPWM. Nevertheless, with the proper use of the shoot-through duty cycle st , the maximum amplitude can be increased, due to the boost factor, keeping leakage currents reduced. In order to include the shoot-through duty cycle st in the switching period, the duty cycles of the odd active vectors should have their values reduced, without modifying the an gular position of the output reference voltage vector . A v possible solution is to reduce equal amounts from each active duty cycle, i.e., a third of st is subtracted from each active duty cycle 1 , 3 , and 5 , leading to 1 = T1 = 1 st Tsw 3 = 3 = 5
T1 Tsw T1 Tsw

= 3 = 5

st 3 st 3

(28)

(22)

In order to determine the time intervals of each odd active space vector, the output reference voltages should be transformed to the axis
v

where Tj is the application time of odd active vector Vj , including the boost characteristic, and j is its associated duty cycle. Considering the restriction in (27) for modied duty cycles j , it is possible to nd the modulation index inequality of OPWM m 2 2 (1 st ) = 3 3 1 Tst Tsw . (29)

2 = (vun 0.5vvn 0.5vwn ) 3 3 3 2 vvn v v = . 3 2 2 wn

(23) (24)

Considering the output reference voltage vector ( ) as a v sum of each odd active vector weighted by its duty cycle , it is possible to determine one equation for the axis, another for

The switching pattern and the CMV in the ZSI-D for the OPWM technique (sector I in Fig. 7) are shown in Fig. 8. The proposed PWM presents four switchings for each active vector change. In order to reduce the number of switchings in the active to shoot-through transition, the one-leg shoot-through vector is chosen. Furthermore, to assure equal current stress in each inverter output leg during the shoot-through state, the oneleg shoot-through vector is changed every 120 . One possible

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Fig. 9.

Output voltage space vectors for OEPWM in the three-phase ZSI-D.

Fig. 8. Switching pattern and CMV in the ZSI-D controlled by OPWM in sector I.
u v combination is as follows: Vst is used from 60 to 60 , Vst is w used from 60 to 180 , and Vst is used from 180 to 60 , completing an output fundamental cycle. It is important to note that switchings in CMV occur only during a transition to or from a shoot-through state, when both reversed-biased diodes D1 and D2 block the path for leakage currents. Another possible technique [called even PWM (EPWM)] consists in using only even active space vectors and the oneleg shoot-through space vector to compose the output reference voltages and to boost the PV voltage. Therefore, only the active vectors V2 , V4 , and V6 and the shoot-through vectors u v w Vst , Vst , and Vst are used. As can be seen in Table II, this technique also guarantees the same CMV during the application of the active space vectors and the same behavior during the shoot-through state. Therefore, the combination of the ZSI-D topology with the EPWM technique also practically eliminates leakage currents in transformerless PV systems. A third possibility [called odd-even PWM (OEPWM)] consists in using a combination of OPWM and EPWM, depending of the position of the output reference voltage vector [14]. v In this technique, the tips of odd and even limiting triangles delimit the output voltage synthesis area in a form of a six-point star, as can be seen in Fig. 9. In OEPWM, the vectors V1 , V3 , and V5 are used in sectors I, III, and V (light gray sectors in Fig. 9) and the vectors V2 , V4 , and V6 are used in sectors II, IV, and VI (dark gray sectors in Fig. 9) to synthesize the output reference voltage vector. Using this pattern, the maximum amplitude (without boost) the of phase-to-neutral voltages is 2VP N /(3 3) (m 4/(3 3) = 0.77), which is 15.5% higher than the amplitude of the output voltages in OPWM and EPWM. With this technique, subtle changes in CMV occur every 60 of the output fundamental cycle, due to changes in the group of the active vectors. Those changes are responsible for six spikes in the leakage currents per fundamental cycle. Nevertheless, the rms value of the leakage currents remains low

when compared with the leakage current in ZSI with MCB, in which the CMV changes eight times per switching period, corresponding to approximately 1334 spikes in the leakage currents per fundamental cycle (for Tsw = 100 s and the 60-Hz grid). V. S IMULATED AND E XPERIMENTAL R ESULTS FOR ZSI AND ZSI-D In order to validate the theoretical models, some simulations and experiments of the ZSI and ZSI-D topologies are carried out. Two types of a transformerless PV system are analyzed: connected to grid and connected to a RL load. The PV frame and the neutral point of the grid (or load) are grounded, creating a closed path to leakage currents. A. Grid-Connected Transformerless PV ZSI and ZSI-D The transformerless PV ZSI and ZSI-D topologies, seen in Fig. 1 without and with diode D2 , respectively, are connected to a 110-Vrms (line-to-neutral voltages)/60-Hz three-phase grid. The PV array has two ground parasitic capacitors concentrated in points P and N (Fig. 1) with values equal to 220 nF, and the ground resistance is equal to 10.7 . The minimum VSI dc-link voltage necessary to connect the PV array to the grid is approximately 350 V (considering the output lter and the current controller saturation limits). The Z-source input voltage and the dc-link capacitor have values equal to vP N = 300 V and CP N = 2200 F, respectively. The Z-source impedance has the following values: L = 2.5 mH and C = 1000 F. A shoot-through duty cycle equal to 0.33 is chosen (voltage boost equal to 2.94 and BB = 1.97) in order to have sufcient output voltage to deliver the energy from the PV array to the three-phase grid, which was not possible in the traditional VSI topology. The switching frequency was xed in 10 kHz, and the output lter has the following characteristics: Lf = 5.5 mH and Rf = 0.6 . The transformerless PV ZSI and ZSI-D topologies are simulated in MATLAB/Simulink simulation platform. Fig. 10 shows the variables of ZSI topology modulated by SVPWM with MCB control. The three-phase grid currents are

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Fig. 10. Simulation of grid-connected PV transformerless ZSI modulated by SVPWM with MCB control. (a) Grid currents. (b) CMV vCM . (c) Leakage current ileak .

shown in Fig. 10(a), and they present high ripples, due to high leakage currents [Fig. 10(c)] owing through each phase of the grid. The CMV vCM , shown in Fig. 10(b), presents four different values, as seen in Fig. 6. Fig. 11 shows the variables of the ZSI-D topology modulated by OPWM. The three-phase grid currents, seen in Fig. 11(a), present lower ripples than the ones in the ZSI, due to low leakage currents [Fig. 11(c)] owing through each phase of the grid. The CMV vCM , shown in Fig. 11(b), presents only two different values, as seen in Table II and Fig. 8. Note that the leakage currents in the ZSI-D topology are practically zero, when compared with the leakage currents in the ZSI topology, which reach almost 7.5 A of peak value and 4.06 A of rms value. The leakage currents in the ZSI-D topology can be seen in detail in Fig. 11(d) and reach peak values equal to 5 mA and rms values equal to 3.11 mA. This proves the effectiveness of the proposed topology and PWM techniques in reducing leakage currents in grid-connected transformerless PV systems.

Fig. 11. Simulation of grid-connected PV transformerless ZSI-D modulated by OPWM. (a) Grid currents. (b) CMV vCM . (c) Leakage current ileak . (d) Leakage current (detail).

B. Transformerless PV ZSI and ZSI-D Connected to a RL Load The transformerless PV ZSI and ZSI-D topologies, seen in Fig. 1 without and with diode D2 , respectively, are connected to a RL load with Rload = 64.5 and Lload = 7 mH. The ground parasitic capacitors of PV array, the ground resistance, and the dc link capacitor are equal to the grid-connected simulation.

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Fig. 12. Simulation of the PV transformerless ZSI modulated by SVPWM with MCB control connected to a RL load. (a) Load currents. (b) CMV vCM . (c) Leakage current ileak .

Fig. 13. Experimental result of the PV transformerless ZSI modulated by SVPWM with MCB control connected to a RL load. (a) Load currents. (b) CMV vCM . (c) Leakage current ileak . Leakage voltage vleak .

The Z-source input voltage is xed in 100 V, and the Z-source impedance has the following values: L = 2 mH and C = 1100 F. A shoot-through duty cycle equal to 0.3 is chosen (voltage boost equal to 2.50 and BB = 1.75). The switching frequency was xed in 10 kHz, and there is not an output lter between inverter and load. The experimental setup is formed by three 1200-V/50-A insulated-gate bipolar transistor (IGBT) modules, one or two 1700-V/60-A fast-recovery diodes, and six single IGBT drivers, all controlled by a oating-point digital signal processor. Fig. 12 shows a simulation result for the ZSI topology modulated by SVPWM with MCB control. The three-phase load currents are shown in Fig. 12(a), and they present high ripples, due to high leakage currents [Fig. 12(c)] owing through each phase of the load. The CMV vCM , shown in Fig. 12(b), presents four different values, as seen in Fig. 6. Both CMV and leakage current in Fig. 12(b) and (c), respectively, are shown in detail in order to see the CMVs four different levels and their inuence in the leakage current.

Fig. 13 shows experimental results for ZSI topology with the same parameters of simulation in Fig. 12. The three-phase load currents are shown in Fig. 13(a). The CMV vCM and the leakage current ileak are shown in Fig. 13(b) and (c), respectively. The leakage current presents peak values equal to 700 mA (similar to simulation), and vleak is the voltage of the RC leakage circuit formed by ground parasitic capacitor and ground resistance. Fig. 14 shows a simulation result for the ZSI-D topology modulated by OPWM. The three-phase load currents, seen in Fig. 14(a), present lower ripples than the ones in ZSI, due to low leakage currents [Fig. 14(c)] owing through each phase of the load. The CMV vCM , shown in Fig. 14(b), presents only two different values, as seen in Table II and Fig. 8. Both CMV and leakage current in Fig. 14(b) and (c), respectively, are shown in detail in order to see the CMVs two different levels and their inuence in the leakage current. Fig. 15 shows the experimental results for the ZSI-D topology with the same parameters of simulation in Fig. 14. The

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Fig. 15. Experimental result of the PV transformerless ZSI-D modulated by OPWM connected to a RL load. (a) Load currents. (b) CMV vCM . (c) Leakage current ileak . Leakage voltage vleak .

Fig. 14. Simulation of the PV transformerless ZSI-D modulated by OPWM connected to a RL load. (a) Load currents. (b) CMV vCM . (c) Leakage current ileak . (d) Leakage current (detail).

three-phase load currents are shown in Fig. 15(a) and also do not present high ripples. The CMV vCM and the leakage current ileak are shown in Fig. 15(b) and (c), respectively. Similar to the simulation, the leakage currents do not present undesired spikes and they are practically equal to zero. Note that leakage currents in the ZSI-D topology (both simulation and experimental) are practically zero, when compared

with leakage currents in the ZSI topology (both simulation and experimental), which reach 700 mA of peak value and 343.56 mA of rms value. The leakage currents in the ZSI-D topology can be seen in detail in Fig. 14(d) and can reach peak values equal to 1 mA and rms values equal to 673.47 A. This proves the effectiveness of the proposed topology and the PWM techniques in reducing leakage currents also in transformerless PV systems connected to grounded loads. In order to evaluate the overall efciency of the proposed topology modulated by the OPWM technique, the losses are estimated in grid-connected and stand-alone (connected to a RL load) applications, as shown in Fig. 16. In both cases and for all the voltage boost range, the ZSI-D output active power and output power factor have the following constant values: 2390 W and 0.9 inductive, respectively. It is possible to note in Fig. 16 that the efciency has a similar behavior in gridconnected and stand-alone applications. As expected, when the voltage boost increases, the overall efciency of the converter decreases, due to higher voltage ripples in the switches.

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Fig. 16. Simulation result of grid-connected and stand-alone ZSI-D efciency versus voltage boost for a xed output active power (2 390 W) and a xed output power factor (0.9 inductive).

VI. C ONCLUSION In this paper, a modied topology of ZSI has been proposed to be applied in three-phase transformerless PV systems. Three specic modulation techniques combined with the proposed topology guarantee constant CMV (and, therefore, constant leakage voltage) during the application of active vectors and complete isolation of the PV array during the shoot-through vectors, improving the behavior of the system in terms of leakage currents with only an additional fast-recovery diode when compared with the original structure. The traditional and modied three-phase transformerless ZSIs were simulated in two load conditions (RL load and grid connected), and experimental prototypes of both topologies connected to a RL load were tested to evaluate leakage currents. The results conrm the effectiveness of the proposed inverter and the proposed modulation techniques in reducing leakage currents in threephase transformerless PV systems. R EFERENCES
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Fabricio Bradaschia (S10) was born in So Paulo, Brazil, in 1983. He received the B.S. and M.S. degrees in electrical engineering from the Federal University of Pernambuco, Recife, Brazil, in 2006 and 2008, respectively, where he is currently working toward the Ph.D. degree. From August 2008 to August 2009, he was a Visiting Scholar at the University of Alcal, Madrid, Spain. His research interests are Z-source converters, direct acac converters, renewable energy systems, and grid synchronization methods.

Marcelo C. Cavalcanti (M07) was born in Recife, Brazil, in 1972. He received the B.S. degree in electrical engineering from the Federal University of Pernambuco, Recife, Brazil, in 1997 and the M.S. and Ph.D. degrees in electrical engineering from the Federal University of Campina Grande, Campina Grande, Brazil, in 1999 and 2003, respectively. Since 2003, he has been with the Department of Electrical Engineering, Federal University of Pernambuco, where he is currently a Professor of Electrical Engineering. His research interests are renewable systems and power quality.

BRADASCHIA et al.: MODULATION FOR Z-SOURCE INVERTER TO REDUCE LEAKAGE CURRENTS IN PV SYSTEMS

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Pedro E. P. Ferraz was born in Recife, Brazil, in 1988. He received the B.S. degree in electrical engineering from the Federal University of Pernambuco, Recife, in 2011, where he is currently working toward the M.S. degree. His research interests are Z-source converters, renewable energy systems, and power quality.

Francisco A. S. Neves (M00) was born in Campina Grande, Brazil, in 1963. He received the B.S. and M.Sc. degrees in electrical engineering from the Federal University of Pernambuco, Recife, Brazil, in 1984 and 1992, respectively, and the Ph.D. degree in electrical engineering from the Federal University of Minas Gerais, Belo Horizonte, Brazil, in 1999. He was a Visiting Scholar at the Georgia Institute of Technology, Atlanta, during 1999 and at Alcala University, Madrid, Spain, from February 2008 to January 2009. Since 1993, he has been with the Department of Electrical Engineering, Federal University of Pernambuco, where he is currently a Professor of Electrical Engineering. His research interests include power electronics, renewable energy systems, power quality, and grid synchronization methods.

Euzeli C. dos Santos Jr. (S04M08) received the B.S., M.S., and Ph.D. degrees in electrical engineering from the Federal University of Campina Grande, Campina Grande, Brazil, in 2004, 2005, and 2007, respectively. From 2006 to 2007, he was with the Electric Machines and Power Electronics Laboratory, Texas A&M University, College Station, as a Visiting Scholar. From August 2006 to March 2009, he was Professor with the Federal Center of Technological Education of Paraba, Joao Pessoa, Brazil. From December 2010 to March 2011, he was a Visiting Professor at the University of Siegen, Siegen, Germany, sponsored by Deutscher Akademischer Austausch Dienst (DAAD)/Coordenao de Aperfeioamento de Pessoal de Nvel Superior (CAPES). Since March 2009, he has been with the Department of Electrical Engineering, Federal University of Campina Grande, where he is currently an Associate Professor of electrical engineering. His research interests include power electronics and electrical drives. Dr. dos Santos is a Member of the IEEE Power Electronics Society, the IEEE Industrial Electronics Society, and the Brazilian Association of Power Electronics (SOBRAEP).

Joo H. G. M. da Silva was born in Rio de Janeiro, Brazil, in 1983. He received the B.S. degree in electrical engineering from the Federal University of Campina Grande, Campina Grande, Brazil, in 2009, where he is currently working toward the M.S. degree in electrical engineering.