Solid-State Electronics 48 (2004) 311 www.elsevier.

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Application of tunnel diodes as millimeter cascades oscillator systems

Sanaa A. Kamh a, F.A.S. Soliman
a b

b,*

Faculty of Girls, Department of Physics, Ain-Shams University, Helioplis, Cairo, Egypt Nuclear Materials Authority, P.O. Box 2404, El-Horrya, Heliopolis 11361, Cairo, Egypt

Received 18 April 2002; received in revised form 13 September 2002; accepted 18 September 2002

Abstract Theoretical and experimental investigations of cascaded oscillator networks using tunnel diodes were carried out. The dependence of the output waveform characteristics on the device- and circuit-parameters and the operating conditions, as well as, the stabilizing network were investigated. A computer aided design technique was achieved to solve the cascaded oscillator general equations and criterion condition for self-starting oscillation. From which, it is clearly noticed that connecting several tunneling diodes in series and parallel networks promise as a method for increasing frequency and output power of these devices as millimeter wave oscillators. On the other hand, a maximum output frequency of 5.10 MHz was obtained applying three cascading stages system. 2002 Elsevier Ltd. All rights reserved.
Keywords: Cascaded oscillator networks; Tunnel diodes; Self-starting oscillation; Output power; Millimeter wave oscillators

1. Introduction The advantages which make the tunnel diode (TD) an important oscillator device arise because of the quantummechanical tunneling principle involved in producing the negativeresistance characteristics [13]. This has resulted in a device of relative simplicity, ruggedness with respect to environmental conditions, and most important, the potential of ultra-high-speed operation [4]. Many authors have described cascaded tunneling diode oscillators, connected in either series or parallel with microwatt power output [5,6]. In this concern, the present paper discusses connecting several TDs in special network form of series and parallel. Which shows promise as a method for increasing the frequency and the output power of these devices as millimeter wave oscillators. Moreover, a computer program is achieved in solving the general equations of the cascaded oscil-

lator system and deduce its self-starting oscillations condition. With the assistance of the proposed computer program, the high frequency cascaded TD oscillator design can be become more ecient.

2. Analytical solution of cascaded oscillator system 2.1. Design criterion for self-starting oscillation and equivalent circuit The condition for self-oscillation in cascaded oscillator systems was studied [79] using the circuit shown in Fig. 1a. It is considered as a unit section of the distributed oscillator (which is divided into equal length sections), where Fig. 1b shows its equivalent circuit. The circuit parameters per unit length of the line can be considered as: Zo : complex impedance of the series TD circuit (TD1 , ro ), YL : complex admittance of the shunt inductive coil (L),

Corresponding author.

0038-1101/$ - see front matter 2002 Elsevier Ltd. All rights reserved. doi:10.1016/S0038-1101(02)00338-6

S.A. Kamh, F.A.S. Soliman / Solid-State Electronics 48 (2004) 311

2.2. Characteristic curves of the cascaded oscillator system A computer program was achieved for solving the general equations of cascaded oscillator system. Moreover, the criterion conditions for self-starting oscillation was obtained applying the values of Ao , Bo , Co and Do in Eq. (5), and is represented as: n6 A1 n4 A2 n2 A3 0 where A1: A2 : and A3 : 2 1=m2 2=m 4=s; 1 1=m2 2=m 4=s2 6=sm 4=s 3=sm2 ; 2=s2 2=s2 m2 4=s2 m 1=s3 7 Using Cardans method and the trigonometrical solution of Eq. (6), it can be transferred to the cubic equation [10,11]; X 3 A1 x2 A2 x A3 0 Using the following substitution; n2 x The roots of Eq. (6) are: p n1;2 k cos h A1 =3 n3;4 n5;6 p k cosh 2p=3 A1 =3 p k cos2p=3 h A1 =3 9 8 6

Fig. 1. Unit single-stage of the distributed oscillator (a), and its equivalent circuit (b).

Y: complex admittance of the parallel combination of the shunt TD circuit (TD2 , L). Applying Kirchhos law to the closed unit section, one gets: ro Rd =Rd ro jxCd ro Rd jxL jxLRd =Rd x2 LCd Rd jxL 0 1

10 11 12

Using the normalized quantities: m ro =Rd , s L=Cd R2 , d x 1=Cd Rd , and n x=x , then Eq. (1) becomes: ro Ao jBo =Co jDo 0 where Ao: Bo: Co: Do: 1 3n s n s n s =m n s ; 2ns=m 3ns n3 s2 =m 2n3 s2 ; 1 m n2 s 2n2 sm; and nm ns nsm n3 sm
2 2 2 2 2 4 2

where p k: 4A11 =3 A11: cos 3h: A2 1=3A2 1 3B11 =A11: p 3=4A11

13 14 15 16

3 B11: 2=27A3 A1 A2 =3 A3 1 The roots of Eq. (6) were calculated using the proposed computer program for dierent values of s, n, and m parameters. It is noticed that, the distributed oscillator has only one real root (n1 ), while the remainder roots (n3 , and n5 ) are imaginary. The rst root represents a stable oscillator mode of operation, while the others are unstable ones. From which, Fig. 2 illustrates the solution of the distributed oscillator system based on both Caradan and the trigonometrical approaches, where, the three distributed oscillator parameters: n1 ; self-starting frequency, h; angle of transformation; and k; self-circuit

From which, the real- and imaginary-parts of Eq. (2) are given as: Ao Co Bo Do 0 Bo Co Ao Do 0 4 5

Eqs. (4) and (5) show the conditions of self-oscillations that occur in the cascaded oscillator.

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Fig. 2. Graph of the computed three distributed oscillator parameters as a function of the normalized parameter m value, showing the stability condition of the system.

Fig. 3. Dependency of the computed oscillator parameters as a function of the normalized frequency.

decrement can be computed. It is clearly shown that the frequency of self-started oscillations (n1 ) and self-circuit decrement (k) have their highest value at largest negative diode resistance, where, the area under the curve of n1 dependency on m is considered for stable operation mode, and that, above the curve, reects the system behaviour under unstable operation mode. On the other hand, h increased exponentially while increasing the normalized m parameter in the range from 0.025 up to 0.075. Also, Fig. 3 shows the dependency of the distributed oscillator parameters (h, k, and n1 ) on the normalized frequency under stable mode of operation. It is clearly shown that, they are considered as a constant function of the normalized frequency, which indicates stable mode of operation. Finally, the dependence of self-starting oscillations frequency (n1 ) on the normalized s parameter values is shown in Fig. 4. The dependence is considered as a constant function, which reects stable operation mode of the distributed oscillator system.

Fig. 4. Variations of the computed self-starting oscillations frequency versus normalized s parameter.

3. Experimental procedure and results In the present part of the study, self-oscillation characteristics of the cascaded (lumped) oscillator and its single stages were experimentally investigated. The rst stage has only one TD (Fig. 5), while the second and succeeding stages has two TDs (Fig. 6). Finally, the effect of the bias voltage (uo ), shunt resistor (ro ) and load

impedance; on the amplitude and frequency, as well as the shape of self-oscillations were studied. 3.1. Characteristic of the single oscillator stage 3.1.1. First stage 3.1.1.1. Dependence on bias voltage. The dependence of the amplitude and frequency of the oscillator output

S.A. Kamh, F.A.S. Soliman / Solid-State Electronics 48 (2004) 311

Fig. 5. Circuit diagram for the rst stage of the oscillator.

reaching a peak value of 2.20 MHz, at bias level of around 0.35 V, then, decreases down to a zero level at certain bias, which reects the limits of the TD dynamic negative resistance region. On the other hand, the amplitude shows approximately a constant value of around 100 mV, within the specied bias voltage band. Also, Plate 1 shows the oscilloscope tracings of the output oscillations for the rst stage biased at dierent voltage levels, 0.13, 0.23, 0.31, 0.38, 0.44, and 0.50 V, respectively. From which it is clear that, at bias level of 0.31 V, the oscillations are sinusoidal, having the frequency (F) of 2.0 MHz and amplitude (A) of 99 mV. It is to be noted that, the shape of the output waveform changes as a function of the TD bias. The oscillations are nearly sinusoidal if the diode is biased around the middle of the negative resistance region. These eects are mainly due to [1214]: 1. The harmonic content of the oscillator output generally changes, because the oscillator swings over dierent portions of the (IV ) curve of the TD at dierent bias values. These changes in harmonic content usually lead to changes in the fundamental frequency. 2. Changes in the bias also inuence the eective value of the TD capacitance (Cd ), as it is voltage dependent, where:

Fig. 6. Circuit diagram for the second stage (and succeeding) single stage oscillator.

Cd V k/ V 1=2

17

waveform as a function of bias voltage is shown (Fig. 7), where self-oscillations occur in the bias voltage range from 0.12 to 0.50 V. The frequency increases with bias

where k is relative dielectric constant, 1:4 1012 V1=2 F; / is barrier height (for Ge is equal to 0.60 and 1.10 V for GaAs) and V is bias voltage. Eq. (17) is applicable only for voltages less than the valley voltage of the TD and the variations in the frequency resulting by assuming that the eective value of Cd is the same as its value at the bias point. Noting that, the variation of the oscillations amplitude, frequency as well as waveform as a function of the bias voltage, is attributed to the variation of the susceptance of the TD with the bias value. As the bias voltage varies both the negative resistance and the rectance of the TD vary. 3.1.1.2. Dependence on load resistance. The work was extended to investigate the eect of the load values, where it is clear that both the oscillator waveform, frequency and amplitude are aected seriously. That is on using load resistor with a value of 10 kX, the oscillations become non-sinusoidal, rather than the obtained (sinusoidal shape) in case of using a load resistor value of 75 X (Fig. 8 or Plate 2). On the other hand, the fall o bias point (called sleep mode) of self-oscillations increased from 0.50 mV (for load 75 X) to 0.58 mV (for load values of 10 kX). It is clearly shown that the oscillations amplitude increases with increasing the load values, from about 100298 mV, while the frequency decreases

Fig. 7. Dependence of the amplitude and frequency of oscillations on bias voltage for the rst stage of the oscillator.

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Plate 1. Output oscillations for the rst stage oscillator at dierent bias voltage, at RL 75 X.

from about 2.201.60 MHz. Finally, and from the experimental results, it is clear that the optimum circuit parameters that can be chosen for the design of rst stage are RL 75 X and ro 0:0 X.

3.1.1.3. Dependence on external capacitor. It is to be noted that, introducing an external air capacitor (C1 ), either parallel to, before or after, the series TD, is shown to aect seriously the oscillator output waveform characteristics (Fig. 9). The frequency is shown to decrease as a function of the capacitor value. This can be attributed to increasing the total circuit capacitance (Cd and C1 ) which leads to decreasing the total circuit reactance. For the rst case (parallel capacitor; with values ranging from 50 to 875 pF), oscillations are sinusoidal for all the bias voltage values. On the other hand, considering position II (where the capacitor is connected before the TD) oscillations are non-sinusoidal. Finally, it is observed that the existence of the external capacitor (in position I) aects the amplitude and frequency of

Fig. 8. Variation of frequency and amplitude of oscillations on the load resistor for the circuit oscillator with single TD.

S.A. Kamh, F.A.S. Soliman / Solid-State Electronics 48 (2004) 311

Plate 2. Oscilloscope tracings of the output oscillations for the rst stage, biased at dierent voltage values, RL 10 kX.

Fig. 9. Variations of the amplitude and frequency of oscillations as a function of external capacitor values, and positions.

oscillation rather than its waveform, when the TD is biased at the same condition (Plate 3). 3.1.2. Second and successive stages 3.1.2.1. Stabilization of output characteristics. The oscillation characteristics of the second (or successive) oscillator stages (where two TD; in series and parallel connections are used) is carried out. Due to the negative

dierential resistance (NDR) region in the (IV ) curve of a single TD, so a circuit using several devices connected in series and parallel and biased simultaneously in the NDR region, is dc-unstable. Because of this instability, an appropriately chosen shunt resistor and capacitor network to series TD are demanded to insure optimum potential stability [15,16]. The stabilizing network formed of the parallel combination of resistance and capacitance is a good compromise between the maximum range of allowable normalized s values and the desire to have a simple network for eective implementation [17,18]. Finally, the circuit diagram for the second (or successive) oscillator stages is shown in Fig. 6, where, it has two TDs of the same type. The dependence of the output waveform frequency and amplitude on bias voltage, for the case of load resistor value of 10 kX, is shown in Fig. 10. It is clear that self-oscillations occur in the bias range from 0.10 to 0.50 V, for ro 0:0 X, while for ro value of 1.0 X, the bias range is 0.080.45 V. Also, it is clear that the frequency increases with increasing the bias voltage, reaching a peak value, depending on uo , then decreases again, at higher bias values. It is clearly shown that the frequency of self-oscillations is higher (about 3.50 MHz at uo 0:40 V) for ro 1:0 X, than that (about 1.85 MHz at uo 0:50 V) where ro 0:0. Also, it is shown that, as the frequency increases, the amplitude of oscillations decreases (from 550 mV down

Plate 3. Output characteristics tracing for the rst oscillator stage, biased at 0.43 V.

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interval. Plates 4 and 5 illustrate the oscilloscope tracings of the output waveform of a stage having two TDs for shunt resistor values of 0.0 and 1.0 X, respectively. It is clear that for the rst case (no shunt resistor, Plate 4) the oscillations are non-sinusoidal at any bias values, while they are sinusoidal in the second case (Plate 5). 3.2. Characteristics of the cascaded stage oscillator The dependence of the oscillation characteristics is studied for the cascading stages, where, Table 1 summarizes and comprise the obtained characteristics for the dierent number of cascaded oscillator stages. It is noticed that, when the two bias voltages are not equal (u01 and u02 ), oscillations of non-sinusoidal shape exist. So the bias voltage band from u01;2 0:10 to 0.40 V reects the range of synchronization of the bias voltage; where sinusoidal oscillation (or approaching sine wave) appear. In other ranges of bias voltage, oscillations of non-sinusoidal shape occur with small amplitude and frequency. Finally, the maximum frequency, for the cascaded stages increases as a function of their number up to three cascaded ones, where it starts decreasing. It has a value of 5.10 MHz for the three cascaded stages and a value of 3.90 MHz for the four stages, while for ve stages it shows a value of 3.50 MHz. On the other hand, the amplitude increases slightly with the number of cascaded stages where it has a value of 290 mV, for the rst stage, while a value of 322 mV is reported to the ve stages oscillator.

Fig. 10. Eects of bias voltage on the output characteristics of the second stage oscillator.

to 250 mV) when using shunt resistor of a value 1.0 X. Finally, we can come to the following conclusion, the shunt resistor (ro ) aects the output waveform, the frequency, the amplitude, as well as the oscillations bias

Plate 4. Output oscillations for the second oscillator stage as a function of bias voltage (RL 10 kX, and ro 0:0 X).

10

S.A. Kamh, F.A.S. Soliman / Solid-State Electronics 48 (2004) 311

Plate 5. Bias voltage and stabilizing shunt resistor dependence of the output characteristics of the second oscillator stage (RL 10 kX, and ro 1:0 X). Table 1 Output characteristics of the dierent cascaded oscillator systems Parameters Starting bias point (V) Fall o bias point (V) Operating bias band (V) Maximum frequency (MHz) Maximum amplitude (mV) Synchronization bias point (V) Number of cascaded stages 1 0.07 0.46 0.39 3.40 290 0.30 2 0.10 0.41 0.31 4.80 294 0.35 3 0.10 0.40 0.30 5.10 305 0.30 4 0.08 0.44 0.36 3.90 330 0.30 5 0.10 0.45 0.35 3.50 332 0.40

4. Conclusions From the theoretical analysis, computer-aided design, and experimental results it could be concluded that: connecting several cascaded tunneling diode oscillators shows a promise as a method for increasing the frequency and amplitude of the output waveform, for single oscillator stage (based on GaAs TDs), the output frequency increases as a function of bias voltage reaching a peak value of 2.20 MHz, at bias level of 0.35 V, oscillations are nearly sinusoidal when the diodes are biased around the middle of their negative resistance region, for cascading oscillations, the maximum frequency is achieved for three cascaded stages, while the power increases with increasing the cascading stage numbers, and sinusoidal oscillations can be traced within the synchronization band of bias.

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