POWER ELECTRONICS

INTRODUCTION TO POWER ELECTRONICS

Dr M R Abro

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POWER ELECTRONICS

POWER

ELECTRONICS

COTROL

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Power Electronics
Definition:

It involves the study of electronic circuits intended to control the flow of electrical energy. The circuits handle power flow at levels much higher than the individual device ratings. (M. H. Rashid, Hand BookP#1)

OR It is defined as to control & convert electrical power by the application of converter topologies incorporating the matrix of switching devices under the guidance of control electronics.

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History of Power Electronics:

It began with the introduction of mercury arc rectifier in 1900 Then metal tank rectifier, grid controlled vacuum tube rectifier, ignitron, phanotron & thyratron were introduced gradually and these devices were applied for power control until 1950s The first electronics revolution began in 1948 with the invention of silicon transistor at Bell Telephone Laboratories PNPN triggering transistor, which was letter called as a thyristor or silicon controlled rectifier, was invented by Bell Telephone Laboratories in 1956 The second electronics revolution began with the development of the commercial thyristor by the General Electric Company & thus the new era of Power Electronics began. Since then, many different types of semiconductor devices and conversion techniques have been introduced
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Power Electronics as a Multi Disciplinary Technology

Converter Circuits Electrical Machines

Signal Processing

Power Semiconductor Devices

Power Electronics

Control Theory

VLSI Circuits Computer Aided Design Techniques

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Micro Computers

Recent Advances in Power Electronics

Semiconductor Devices Converter Circuits Control of Power Electronics

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Four generations of Solid-State Power- Electronics

First generation (1958-1975) (Thyristor Era)

Diode Thyristor

TRIAC

Second Generation (1975-1985)

Power BJT

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Power MOSFET
GTO Microprocessor ASIC PIC Advance Control
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Four generations of Solid-State Power- Electronics

Third generation (1985-1995)

IGBT SIT SITH MCT IPM (intelligent Power Module)

DSPs

Fourth Generation (1995-)

IGCT

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Cool MOS
PEBB (Power Electronics Building Block) Sensorless Vector Control Al Techniques: Fuzzy logic, Neural Networks, Genetic 8 Algorithms.

Classification of Semiconductor Devices

Semiconductor devices can be classified into three categories according to their degree of controllability: Un-controlled turn-on and off devices (e.g. Diodes). Controlled turn-on and uncontrolled turn-off (e.g. SCR). Controlled turn-on and off (e.g. BJT, SITH, MOSFET, GTO, IGBT, SIT,MCT).

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Different Features of
Semiconductor Devices
Devices which requires continuous signal for keeping them in turn-on state Devices which requires pulse-gate signal for turning them on & once these devices are on then gate pulse is removed Devices which posses bidirectional current capability Devices which posses unidirectional current capability BJT, MOSFET, IGBT and SIT

SCR, GTO, SITH and MCT

TRIAC and RCT Diode, SCR, GTO, BJT, MOSFET, IGBT, SIT, SITH, MCT

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CLASSIFICATION OF SEMICONDUCTOR DEVICES

Power Semiconductor Devices

Power Diodes

Power Transistors

Thristors

General Purpose

Power BJTs

Line Commutated Forced Commutated TRIAC

GATT

Fast Recovery

Power MOSFET

LASCR

Schottky

IGBT

MCT

SIT

GTO

IGCT

RCT

ETO

SITH
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MTO
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POWER DIODES

GENERAL PURPOSE DIODE:

Voltage/Current Ratings: 10KV/5KA On Voltage/Current: 1.6V/10KA

Switching Time (S): 25

Are generally manufactured by diffusion High reverse recovery time Use in low speed applications where recovery time is not critical

FAST RECOVERY DIODE:

Voltage/Current Ratings: 3000V/1000A On Voltage/Current: 3V/3KA

Switching Time (S): 2-5

Low recovery time Use in choppers & inverters where the speed of recovery time is of critical importance

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Anode

POWER DIODES

Metal Semiconductor Cathode Switching Time (S): 0.23

SCHOTTKY DIODE:
Voltage/Current Ratings: 100V/300A On Voltage/Current: 0.58V/60A

Have low on state voltage Very small recovery time (typical of nanoseconds) The leakage current increases with the voltage ratings & their ratings are limited to 100V These are ideal for high current & low power voltage dc chopper supplies

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POWER TRANSISTORS

Power BJT: Voltage/Current Rating: 1200V/800A It is a current controlled bi-polar two junction device. Switching speed is considerably faster than that of thyristortype devices. Fall into obsolescence due to advent of IGBT.
Power MOSFET: Voltage/Current Rating: 600V/400A It is unipolar & voltage controlled device It is faster of all the devices It can operate in hundreds of KHz switching frequency It is commonly used in high frequency switching mode power supplies It is not used in high power converters because of large conduction losses
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POWER TRANSISTORS

IGBT: Voltage/Current Rating: 3500V/1200A It is basically a hybrid MOS-gated turn-off bipolar transistor It combines the attributes of MOSFET,BJT & thyristor It was commercially introduced in 1983 It is faster than that of BJT It can operate in medium power upto 20KHz switching frequency It is finding popularity & has replaced BJT.

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POWER TRANSISTORS

IGBT (Continued): The invention of IGBT is an important mile stone in the history of Power Semiconductor devices. 6.5KV & 10KV devices are under test in laboratory. IGBT Intelligent Power Module (IPM): This device is available for 6000V, 50-300A & 1200V, 50-150A to cover up to 150hp ac drive applications.
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POWER TRANSISTOR

SIT: Voltage/Current Rating: 1200V/10A Switching Time (S): 0.55 It is high power high frequency device It is solid state version of a triode vacuum tube It was commercially introduced by TOKIN Corp in 1987 It is used in AM/FM transmitters, induction heating, high voltage low current power supplies
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THYRISTORS

Line or Natural Commutated Thyristors: Voltage/Current Ratings: 8000V/4500A Switching Time (S): 10 to 20 in a 3000V, 3600A Thyristor These are turned off due to the sinusoidal nature of input voltage

Forced Commutated Thyristors: These are turned off by an extra circuit called commutation circuitry TRIAC: Voltage/Current Ratings: 1200V/300A On Voltage/Current: 1.5V/420A

Its characteristics are similar to two thyristors connected in parallel & having only one gate terminal The current flow through it can be controlled in either direction These are widely used in all types of simple heat controls, light controls, motor controls & AC switches
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THYRISTORS

GTO: Voltage/Current Ratings: 6000V/6000A (Mitsubishi) . Switching Time (S): 25 On Voltage/Current: 2.5V/1KA It is self turned off thyristor. It does not require any commutation circuit. It is used for commutation converters. RCT: Voltage/Current Ratings: 2500V/1000A Switching Time (S) On Voltage/Current: 2.1V/1KA It is connected as a thyristor with an inverse parallel diode These are used for high speed switching (traction applications)

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Thyristors

SITH:
Voltage/Current Ratings: 4000V/2200A On Voltage/Current: 2.3V/400A

Switching Time (S): 6.5

It is self controlled GTO like device It was commercially introduced by TOYO Co. in 1988 These are applied for medium power converters with frequency of several hundreds of kilo hertz beyond the frequency of GTO

GATT:
Voltage/Current Ratings: 1200V/400A On Voltage/Current: 2.8V/1.25KA

Switching Time (S): 8

These are used for high speed switching, specially in traction applications

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Thyristors

Voltage/Current Ratings: 600V/1500A On Voltage/Current: 2.4V/4.5A

LASCR:

Switching Time (S): 200-400

These are suitable for high voltage system applications, specially in HVDC systems The four layer PNPN construction is similar to that of ordinary SCR with one exception- the PN junctions are formed on a silicon pellet in an elongated manner to permit radiations by a light source

MCT:
Voltage/Current Ratings: 4500V/250A, 900V/15A, 1000V/30A, 600V/60A It is a thyristor like trigger into conduction device that can be turned on or off by a short pulse on the MOS gate This was introduced by General Electrical Company in November 1988 It is like a GTO, except that the turn-off gain is very high

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Thyristor IGCT: Available with 6000V, 6000A (10KV devices are under test) It integrates a gate-commutated thyristor (GCT) with a multilayered printed circuit board gate drive The GCT is a hard-switched GTO with a very fast & large gate current pulse, as large as the full rated current, that draws out all the current from cathode into the gate in about 1S to ensure a fast turn-off Similar to GTO, the IGCT is turned on by applying the turn-on current to its gate The IGCT is turned off by a multilayered gate driver circuit board that can supply a fast rising turn-off pulse (i.e., a gate current of 4KA/S with a gate cathode voltage of 20V only)

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Thyristor

Reverse Blocking IGCT : Available with 6000V, 800A is introduced very recently by ABB for use in IFI drives. ETO: It is a MOS-GTO hybrid device that combines the advantages of both the GTO & MOSFET ETOs with current rating of up to 4KA & voltage rating of up to 6KV have been demonstrated It is suitable for high power and high frequency applications

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Thyristor

MTO:

It is a combination of a GTO & a MOSFET, which together

overcome the limitations of the GTO turn-off ability

Its structure is similar to that of a GTO and retains the advantages of high voltage (up to 10KV) & high current (up to 4000A) Can be used in high power application ranging from 1 to 20MVA

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POWER INTEGRATED CIRCUIT(PIC) FEATURES

MONOLITHIC INTEGRATION OF POWER, CONTROL AND PROTECTION ELEMENTS SMART POWER

ADVANTAGES OF COST, SIZE, EMI PROBLEM AND RELIABILITY

ISOLATION PROBLEM OF LOW AND HIGH VOLTAGE DEVICES THERMAL MANAGEMENT PROBLEM EXAMPLE COMMERCIAL PICs: STEPPER MOTOR DRIVE BRUSHLESS DC MOTOR (BLDM) DRIVE H-BRIDGE INVERTER CHOPPER FOR DC MOTOR DRIVE GATE DRIVER FOR IGBT DC-DC CONVERTER

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Power Integrated Circuit for DC Motor Drive

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Relative properties of Controllable Switches

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108

Power Frequency Trends of the Devices

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106

IGCT GTO

DEVICE V-I RATINGS PRODUCT (VI)

105 IGBT IPM IGBT DISCRETE THYRISTOR 104

103

POWER MOSFET 102 TRIAC

10 10

!02

103 104 SWITCHING FREQUENCY (Hz)

105

106

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Types of Power Electronic Circuits:

For the control of electric power the conversion of electric power from one form to another is necessary and the switching characteristics of the power devices permits these conversions. The static power converters performs theses functions of power conversions. A converter may be considered as a switching matrix. The power electronics circuits can be classified into the following types: Diode rectifiers AC-DC converters (controlled rectifiers) AC-AC converters (AC voltage controllers) DC-DC converters (DC choppers) DC-AC converters (inverters) Static switches
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Four basic types of converters depending upon the function performed

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Control of Power Electronics

Microcomputer Control

VLSI Control

Expert & Fuzzy Control

Neural Networks

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SOME SIMULATION PROGRAMS

MATLAB/SIMULINK PSPICE PSIM EMTP MATRIXX SIMNON SABER C

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In a VLSI, a very large number of devices are integrated monolithically in a chip to provide great simplification of hardware. A VLSI chip may use digital, analog, or mixed signals.

Digital Controller Classification

The instruction set is complex, which results in a complex architecture & a sluggish computation.

Reduced instruction set computers: Simple architecture allows for high speeds

Specially designed for high speed parallel processin g using several processor s

The gate array consists of a matrix of simple logic gates that are interconnected by the user in a field programmable GA (FPGA) or programmable logic device (PLD), which can be programmed electrically (ELPD) or by mask (CPLD) similar to EPROM or PROM, respectively.

Interconnected functional circuits such as (D flip-flop, counters, etc) to provide more efficient performance & effective chip estate utilization than gate arrays.

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A custom chip (not programmable) is very economical & is designed for specific applications. An ASIC chip can be designed with digital, analog, memory elements (ROM, RAM), & RISC or DSP to satisfy full control function.

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Applications

DC AND AC REGULATED

POWER

SUPPLIES

ELECTRO CHEMICAL PROCESSES

HEATING AND LIGHTING CONTROL

ELECTRONIC WELDING

POWER LINE VAR AND HARMONIC COMPENSATION

POWER ELECTRONIC SYSTEMS

HIGH VOLTAGE DC SYSTEM

PHOTOVOLTAIC AND FUEL CELL CONVERSION

VARIABLE SPEED CONSTANT FREQUENCY

SYSTEM

SOLID STATE CIRCUIT BREAKER

INDUCTION HEATING

MOTOR DRIVES

Flexible AC Transmission System, FACTS 1/15/2012 35

Applications

A 3-phase controlled bridge circuit used as a basic topology for many converter systems 1/15/2012 36

Applications

A high voltage DC (HVDC) transmission system 1/15/2012 37

Applications

Parallel connection of two 6-pulse converters

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Applications

Variable frequency converter for motor control

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Applications

Pulse width modulated or square wave inverter with a controlled rectifier input

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Applications

Current-source inverter on the output section of motor drive system using capacitors for power factor correction

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Applications

Per phase thyristor-controlled inductor (TCI) & thyristor-switched capacitor (TSC) system

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Applications

Static transfer switch used in a UPS system

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POWER ELECTRONICS IN ENERGY SAVING

CONTROL OF POWER BY ELECTRONIC SWITCHING IS MORE EFFICIENT THAN OLD RHEOSTATIC CONTROL ROUGHLY 60% - 65% OF GENERATED ENERGY IS CONSUMED IN ELECTRICAL MACHINES MAINLY PUMPS AND FANS

VARIABLE SPEED operation of the motor with the help of Power Electonics is highly efficient.
20% OF GENERATED ENERGY IS USED IN LIGHTING HIGH FREQUENCY FLUORESCENT LAMPS ARE 2-3 TIMES MORE EFFICIENT THAN INCANDESCENT LAMPS

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HOW TO SOLVE OR MITIGATE ENVIRONMENTAL PROBLEMS WITH THE RELEVANCE OF POWER ELECTRONICS?
PROMOTE ALL ENERGY USAGE IN ELECTRICAL FORM CENTRALIZE FOSSIL FUEL POWER GENERATION AND APPLY ADVANCED EMISSION STANDARDS LARGE USAGE OF RENEWABLE ENERGY SOURCES- HYDRO, WIND AND PHOTOVOLTAIC CONSERVATION OF ENERGY BY EFFICIENT USE OF ELECTRICITY PREVENT ENERGY WASTE

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ADVANCES AND TRENDS OF POWER SEMICONDUCTOR DEVICES

MODERN POWER ELECTRONICS EVOLUTION PRIMARILY FOLLOWED THE POWER DEVICE EVOLUTION - WHICH AGAIN FOLLOWED THE MICROELECTRONICS EVOLUTION GRADUAL OBSOLESCENCE OF PHASE CONTROL DEVICES (THYRISTOR, TRIAC) DOMINANCE OF INSULATED GATE CONTROLLED DEVICES (IGBT, Power MOSFET) POWER MOSFET WILL REMAIN UNIVERSAL IN LOW VOLTAGE HIGH FREQUENCY APPLICATIONS GRADUAL OBSOLESCENCE OF GTOs (LOWER END BY IGBTs AND HIGHER END BY IGCTs) REDUCTION OF CONDUCTION DROP IN HIGH VOLTAGE POWERMOSFET AND IGBT SiC BASED DEVICES WILL BRING RENAISSANCE IN HIGH POWER ELECTRONICS DIAMOND DEVICES IN THE LONG RUN
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NEXT GENERATION POWER SEMICONDUCTOR MATERIALS SILICON CARBIDE DIAMOND

LARGE BAND GAP HIGH CARRIER MOBILITY HIGH ELECTRICAL CONDUCTIVITY HIGH THERMAL CONDUCTIVITY

RESULT
HIGH POWER CAPABILITY HIGH FREQUENCY LOW CONDUCTION DROP HIGH JUNCTION TEMPERATURE GOOD RADIATION HARDNESS
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THANKS

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