DF3A6.

8FUT1
Preferred Device

Zener Transient Voltage Suppressor

Dual Common Anode Zeners for ESD Protection
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These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium.
Features

1 3 2

MARKING DIAGRAM
1 2 SC70/SOT323 CASE 419 STYLE 4 68 M 68 M

PbFree Package is Available SC70 Package Allows Two Separate Unidirectional Configurations Low Leakage < 1.0 mA @ 5.0 V Breakdown Voltage: 6.47.2 V @ 5.0 mA ESD Protection Meeting:16 kV Human Body Model 30 kV Contact = IEC6100042 Peak Power: 24 W @ 1.0 ms (Unidirectional), per Figure 1 Peak Power: 150 W @ 20 ms (Unidirectional), per Figure 2 Void Free, TransferMolded, Thermosetting Plastic Case Corrosion Resistant Finish, Easily Solderable Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications

= Specific Device Code = Date Code

Mechanical Characteristics

ORDERING INFORMATION
Device DF3A6.8FUT1 DF3A6.8FUT1G Package SC70 SC70 (PbFree) Shipping 3000/Tape & Reel 3000/Tape & Reel

MAXIMUM RATINGS
Rating Steady State Power Dissipation Derate above 25C (Note 1) Thermal Resistance JunctiontoAmbient Operating Junction and Storage Temperature Range Peak Power Dissipation @ 1.0 ms (Note 2) @ TA = 25C Peak Power Dissipation @ 20 ms (Note 3) @ TA = 25C ESD Discharge MIL STD 883C Method 30156 IEC6100042, Air Discharge IEC6100042, Contact Discharge Symbol PD RqJA TJ, Tstg PPK PPK VPP 16 30 30 Value 200 1.6 618 55 to +150 20 150 Unit mW mW/C C/W C W W kV

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Preferred devices are recommended choices for future use and best overall value.

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Mounted on FR5 Board = 1.0 X 0.75 X 0.062 in. 2. Nonrepetitive pulse per Figure 1. 3. Nonrepetitive pulse per Figure 2.
Semiconductor Components Industries, LLC, 2004

July, 2004 Rev. 1

Publication Order Number: DF3A6.8FUT1/D

DF3A6.8FUT1
ELECTRICAL CHARACTERISTICS
(TA = 25C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol VRWM IR VBR IT IF VF ZZT ZZK Parameter Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Forward Current Forward Voltage @ IF Maximum Zener Impedance @ IZT Maximum Zener Impedance @ IZK IPP VC VBR VRWM IR VF IT V IF I

UniDirectional TVS

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Parameter Forward Voltage Zener Voltage (Note 4) Operating Resistance (Note 5) Symbol VF VZ ZZK ZZT Reverse Current Clamping Voltage IR1 VC Conditions IF = 10 mA IZT = 5 mA IZK = 0.5 mA IZT = 5 mA VRWM = 5 V IPP = 2.0 A (Figure 1) IPP = 9.37 A (Figure 2) 6.4 Min Typ 0.8 6.8 Max 0.9 7.2 200 50 0.5 9.6 16 ESD Protection Human Body Model (HBM) Contact IEC6100042 Air Discharge 16 30 30 Unit V V W W mA V V kV

4. VZ measured at pulse test current IZT at an ambient temperature of 25C. 5. ZZT and ZZK is measured by dividing the AC voltage drop across the device by the AC current supplied. AC frequency = 1.0 kHz.

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DF3A6.8FUT1
TYPICAL CHARACTERISTICS
100 tr 100 VALUE (%) PEAK VALUE IRSM PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50%OF IRSM. tr 10 ms % OF PEAK PULSE CURRENT 90 80 70 60 50 40 30 20 10 0 0 1 2 3 t, TIME (ms) 4 0 0 20 40 t, TIME (ms) 60 80 tP tr PEAK VALUE IRSM @ 8 ms PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms HALF VALUE IRSM/2 @ 20 ms

50 tP

IRS HALF VALUE 2 M

Figure 1. 10 1000 ms Pulse Waveform

Figure 2. 8 20 ms Pulse Waveform

20.01 18.01 I ZT, ZENER CURRENT (mA) 16.01 14.01 12.01 10.01 8.01 6.01 4.01 2.01 0 6 6.2 6.4 6.6 6.8 7 7.2 7.4 7.6 7.8 8 I F , FORWARD CURRENT (mA) REVERSE VOLTAGE IS MEASURED WITH A PULSE TEST CURRENT IT AT 25C

200 180 160 140 120 100 80 60 40 20 0 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 FORWARD VOLTAGE IS MEASURED WITH A PULSE TEST CURRENT IF AT 25C

VZ, ZENER VOLTAGE (V)

VF, FORWARD VOLTAGE (V)

Figure 3. Zener Voltage vs. Zener Current

Figure 4. Forward Voltage vs. Forward Current

100 90 C, CAPACITANCE (pF) 80 70 60 50 40 30 20 10 0 0 1 2 3 4 V, BIAS VOLTAGE (V)

300 PD , POWER DISSIPATION (mW) f = 1 MHz TA = 25C 250 200 150 100 50 0 0 25 50 75 100 125 150 175

UniDirectional Pin 1/23

BiDirectional Pin 12

TA, AMBIENT TEMPERATURE (C)

Figure 5. Capacitance vs. Bias Voltage

Figure 6. Steady State Power Derating Curve

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DF3A6.8FUT1
PACKAGE DIMENSIONS
SC70 (SOT323) CASE 41904 ISSUE L

A L
3

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D G H J K L N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.032 0.040 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.079 0.095 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.00 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 2.00 2.40

S
1 2

D G

C 0.05 (0.002)

N K

STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE

SOLDERING FOOTPRINT*
0.65 0.025 0.65 0.025

1.9 0.075 0.9 0.035 0.7 0.028

SCALE 10:1

mm inches

*For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

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DF3A6.8FUT1/D