Fundamentals of Semiconductor Fabrication

sbl22@hanyang.ac.kr http://ndl.hanyang.ac.kr/

Ch.1. Introduction

Chapter 1. Introduction

1.1 Semiconductor Materials 1.2 Semiconductor Devices 1.3 Semiconductor Process Technology 1.4 Basic Fabrication Steps 1.5 Summary

Ch.1. Introduction

1.1 Semiconductor Materials

The Electronics industry constitutes about 10% of Gross World Production (GWP) by 2010. The Semiconductor industry will grow to 25% of the electronics industry. The Motivation is Economics

Ch.1. Introduction

1.1 Semiconductor Materials

First Transistor

Bardeen, Brattain, Schockley

Ge point-contact solid state amplifier

Germanium was the first material used in semiconductor devices Silicon became the dominant semiconductor around early 1960s. : Can be easily oxidized to form SiO2 - High-quality insulator and diffusion barrier : Has higher bandgap than Ge - Higher operating temperatures : Is very inexpensive (Cheap) - Abundant element in nature.

The Motivation is Economics

Ch.1. Introduction

1.2 Semiconductor Devices

1948 Invention of the Transistor 1821 Tomas Seebeck discovered semiconducting nature of PdS 1833 Michael Faraday finds temperature dependent conductance of semiconductors 1875 Walter von Siemens invented a Se Photometer 1904 John Ambrose Fleming invents the Vacuum Tube Diode 1907 Lee de Forest invents the Vacuum Tube Triode (first amplifier) 1907 Henry Josef Round demonstrate cold yellow light emitting from SiC crystals first Light Emitting Diode (LED) 1938 Walter Schottky explains the metal-semiconductor rectifying effect Schottky barrier (age 52) 1940 Russel Ohl invented the p-n junction (Solar cell) 1967 Kahng and Sze invent the floating gate non volatile memory Flash

Walter Brattain John Bardeen William Shockley

1958 John Kilby invented the IC 1960 Dawon Kahng and M. Atalla invent the MOSFET

Ch.1. Introduction

1.3 Semiconductor Process Technology 1.3.1 Key Semiconductor Technologies 1952 Diffusion doping Pfann patented the idea of using dopant diffusion to alter conductivity type in Si 1957 Lithographic Photoresist Andrus applies the optical lithography technique to semiconductor device fabrication - Used photosensitive, etch-resistant polymers (photoresist) for pattern transfer 1957 Oxide masking Frosch and Derrick found that SiO2 can prevent impurity diffusion through it 1957 Epitaxial CVD growth Sheftal et al. uses chemical vapor deposition technique to grow substrate lattice matching thin atomic layers of crystalline semiconductors. 1959 Ion implantation Shockley patented the Ion implantation technique for semiconductor doping (but the patent expired in 1974 just as the process was being employed by industry)

Ch.1. Introduction

1.3 Semiconductor Process Technology 1.3.1 Key Semiconductor Technologies 1959 Integrated Circuit Kilby demonstrates the first integrated circuit containing one bipolar Tr, 3 resistors, and one capacitor, all made in Ge 1959 Monolithic Integrated Circuits (IC) Noyce proposed the monolithic IC by fabricating all devices in a single semiconductor substrate and connecting devices by Al metallization 1960 Planar process Hoerni developed the planar process which uses windows in the surface oxide layer for doping and device definition 1963 CMOS (complementary MOSFET) Wanlass and Sah propose using NMOS and PMOS to form logic elements

First monolithic IC Flip-Flop circuit containing 6 devices

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1.3 Semiconductor Process Technology 1.3.1 Key Semiconductor Technologies 1967 DRAM Dennard invented the dynamic random access memory (DRAM) One MOSFET and one capacitor (1T1C) -The MOSFET serves as a switch to charge or discharge the capacitor 1969 Polysilicon self-aligned gate Kerwin et al. proposed using polysilicon as the gate and contact ion implantation mask (self-alignment) 1969 MOCVD Manasevit and Simpson developed the metal-organic CVD (MOCVD) used for epitaxial growth of compound semiconductors 1971 Dry etching Irving et al. invented the dry etching technique using CF4+O2 plasma to etch SiO2 1971 Molecular Beam Epitaxy Cho et al. invented the molecular beam epitaxy (MBE) for atomic layer deposition

Ch.1. Introduction

1.3 Semiconductor Process Technology 1.3.1 Key Semiconductor Technologies

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1.3 Semiconductor Process Technology

Ch.1. Introduction

1.3 Semiconductor Process Technology

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1.3 Semiconductor Process Technology

Ch.1. Introduction

1.3 Semiconductor Process Technology

Ch.1. Introduction

1.4 Basic Fabrication Steps

Ch.1. Introduction

1.4 Basic Fabrication Steps

Ch.1. Introduction

1.4 Basic Fabrication Steps