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Semiconductor Heterojunctions
Electronic Properties of a semiconductor heterojunction determined by: Energy Gaps Electron Affinities Doping Types & levels. Straddling Gap Broken Gap
Offset Gap
Egap,1
C Bands EC EV V Bands
C Bands EC
C Bands EC
Egap,2
Egap,1
Egap,2
Egap,2
EV
EV V Bands
Egap,1
V Bands
(a)
CB & VB edges of one lies within the energy gap of the other. Eg1>Eg2. Electron affinity of the small gap material slightly larger than the wider gap material. Eg1-Eg2>2- 1>0 E.g.: AlAs-GaAs
Eg1~Eg2. Electron affinities different, and the difference is less than either band gap. 2> 1>0 Both Band Edges of one SC lies above both Band Edges of the other. Portion of band Gap over lap at the interface. E.g.: InSb-InP
(b)
(c)
Extreme difference in Electron affinity . Band gaps do not overlap. VBE of one lies above the CBE of Other. One SC has narrow band gap. E.g.: InAs-GaSb
1) 2) 3)
Mark a vertical line on a page to indicate the junction & a horizontal line to indicate flat-band vacuum level. Mark the band edge positions on the vertical line using electron affinity & energy band gap values for the 2 semiconductors. These are doping independent & fix the band edges. Draw a horizontal dashed line indicating the Fermi level at equilibrium tricky & important determines how band bending is distributed. Far from the junction, mark the band edges relative to the Fermi level depending on doping. Connect the band edges far from the junction to the band edges in Step 2. Requirements for this are: Slopes of the connecting segments must match where they intercept the points in Step 2 satisfy electron continuity. Energy gaps must be constant on each side of the junction. Depletion widths are fixed by the doping levels.
D is the potential energy difference associated with band bending. DA + DB = EF or the contact potential which is the difference in Fermi energies of the semiconductors before contact.
Real particles move to lower their chemical potential. Charged particles in an electrical field move according to their electrostatic potential. Large particles in a gravitational field move to the center of mass. Particles placed in a concentration gradient move from high concentration to low concentration (diffuse).
Once the chemical potential of a particle is known, its motion can be easily described. When 2 systems interact exchange matter or energy equalization of chemical potential equilibrium. Fermi level gives a measure of the chemical potential of the lowest energy free electron or the highest energy free hole.
F = C
d dx
(1)
Where C is a constant. Let us consider a specific particle the electron. The force on a electron due to the chemical potential gradient produces a current density, J:
d J = qn n dx
(2)
n is the electron mobility & is the chemical potential of the electron. Let us consider the electron chemical potential gradient due to electric fields & concentration gradients. The general chemical potential gradient in the system is given by:
d k BT dn dV = dx qn dx dx
(3)
d k BT dn dV = dx qn dx dx
Change in concentration, n, in the absence of an electric field
(3)
k T dn d dn B J = qn n = qn n + E = n k T + qn nE dx qn dx B dx
Using Einstein relation between diffusivity & mobility:
}
D=
k T
n B
}
Voltage (potential) gradient at constant concentration of electrons electric field.
(4)
(5)
J = qD
dn + q nE n dx
(6)
Diffusion Current
}
Current due to the electric field.
Drift Current
N-type there is higher concentration of electrons energies close to CBE (high chemical potential) P-type there is empty states near the VBE & having low chemical potential for electrons. On contact, electrons are free to flow - Electrons drift and diffuse across a junction between unlike materials. Large concentration gradient across the junction electrons diffuse from n-type to p-type, leaving positively-charged donor dopants atoms behind. The residual electric potential resulting from carrier diffusion presents a barrier to further electron motion in one direction fundamental of diode behavior.
V.B.
C.B.
V.B.
Difference in Fermi Energies before contact establishes a band bending edge and a contact potential Vbi after contact.
Band diagrams for (a) n-type whose surface is negatively charged (b) p-type whose surface is positively charged. Assume that the surface of an n-type SC has somehow been negatively charged will repel the free electrons near the surface leaving +vely charged holes behind. Any electron that drifts towards the surface feels this repelling force. Far fewer free electrons at surface compared to the interior depletion region is a potential barrier for electrons.
k T dn d dn B J = q n n = qn n + E = n k T + q n nE dx qn dx B dx
dn J = qD + q nE n dx
Solving for E:
ln n / n E= qn n p
B
k T
(7)
V =
bi
k T
B
ln n / n n p q
(8)
Vbi is the built-in voltage or the contact potential across the junction, nn & np are the electron concentrations on the n & p sides of the junction respectively. For a shallow dopant at high temperature, nn~ND where ND is the donor concentration on the n-side. Likewise, np=ni2/pp or
n =
p
N N
C
E gap / k BT
A
(9)
N N E gap / k BT E N N gap = ln n = ln A D e + ln A D n NC NV k BT NC NV p n
N N qV = E + k T ln A D bi gap B NC NV
Vbi is zero if both sides are undoped and increases with NA and ND.
(10)
Forward Bias: A forward applied bias will reduce the potential between the layers, narrow the depletion region & lower the barrier for carrier injection (by diffusion) across the junction. The band-gap discontinuities have opposite sign -one is step upward, other is step downward, -electrons emitted into the GaAs will have a much lower barrier to overcome than holes injected from GaAs into the AlAs. Most of the forward diffusion current will be carried by electrons. Reverse Bias: Current is from thermally generated carriers reach depletion region swept into the AlAs. Larger energy gap of AlAs relatively few minority carriers & drift from AlAs to GaAs.
Gain, =
i i
icollector
ibase
b t If base is wider than mfp between collisions, carrier must diffuse across the base. Minority Carrier Devices. High gain by high n & low t ie high carrier mobility. This requires high quality materials, low doping & no defects. GaAs has higher electron mobility than Si high n-p-n speeds.
MISFET or MOSFET
Photovoltaics
Si ribbon 3.0% Amorphous Si 4.0% CdTe 2.7% CIGS 0.3% Other Crystalline Products 6.0%
Poly-Crystalline Si 46.0%
Atmospheric absorption measurement is Air Mass (AM) which is: Zero for solar radiation outside the atmosphere AM 0 & One for radiation reaching the ground when sun has reached its zenith AM 1
For space application (e.g. satellites), AM 0 1353 W/m2 & for terrestrial application AM 1.5 925 W/m2 - solar angle of 45
Absorption of light can occur on both sides of the junction creating minority carriers that can diffuse towards the junction. -If there is no recombination, a photocurrent can be generated. -The junction is shallow & absorption will occur on one side -where there is greater depth of absorbing material. - In the dark, no current is created. -When light impinges on the PV device, current flows through the wire from the -p-type side to the n-type side as in conventional current.
Ideal J-V characteristics for a PV cell with Js = 30 mA/cm2. Shaded area = Maximum extracted power. JS is saturation current reverse bias qV / k T zero illumination. B q is charge on carrier s L V is applied voltage kB is Boltzmanns constant T is temperature of cell JL is photogenerated current.
J = J e
1 J
qV / kBT 1 J L J = Jse
Ideal J-V characteristics for a PV cell with Js = 30 mA/cm2. Shaded area = Maximum extracted power. In the ideal cell, JL is the short-circuit current shown as JSC. Power extracted (JV) lies in shaded area ie, (+V J) quadrant. Load determines operating point. Maximum Power at the operating point is given by the largest JV area.
J = Jse
1 J L
Ideal J-V characteristics for a PV cell with Js = 30 mA/cm2. Shaded area = Max extracted power.
J = Jse
1 J L
Fraction of Solar photons absorbed by the PV cell. Electrical energy created by the photon.
Calculate by integrating over the solar spectrum for the appropriate AM number - include the cut-off wavelength of semiconductor absorber layer.
abs =
n ( E ) dE
g
n ( E ) dE
0
abs =
n ( E ) dE
g
n ( E ) dE
0
Photons with Energy < Band-Gap will not be absorbed & will not contribute to the Photocurrent. Maximum energy that can be extracted with a CdTe solar cell with a band-gap of 1.45 eV.
Photovoltaics
Implies that not all of the photon energy will be converted into electrical energy even if one photon absorbed constitutes one minority carrier crossing the junction. Electrical energy per carrier is given by Em, so the maximum power of the device = absorption rate of photons x mean electrical energy created per photon. This is shown by the inner shaded area. Ideal value of Em will track the band-gap. Narrower Eg materials larger proportion of photons absorbed, but less electrical energy per photon.
Ideal efficiency against band-gap energy for single-junction cell for AM 1.5 radiation.
>80% of PV is Single Crystal or polycrystal Si drawback is that it is an Indirect Band-Gap Semiconductor lower absorption. Si absorption coefficient ~ 2 x 103 /cm, for CdTe it is 1 x 105 /cm ~ 17% Need thicker material to absorb Photon Energy > Eg Polycrystal Si random grains of size 1 cm loss of photogenerated charge at the g.b - ~ 15%
Si PV
CdTe PV
III-V Multi-junction PV
III-V Multi-junction PV
CuInxGa1-xSe2 PV
15% Al
20 40 % Al 60 80 100
9.524% P
1 0.5 0 0 20 40 %P 60 80 100
17.4% Ga