Study of h-Parameters of a Transistor

Presented by:-

Praveen Yadav(10116037) Prince Jain(10116038) Priyanshi Goyal (10116039) Ravi Raj(10116040)

Aim :Measurement of the h parameters of the given transistor : AC 128 at 1 Khz.

Apparatus Required :I.) II.) III.) Set-up for h-parameters measurements Vacuum Tube Voltmeter (VTVM ) A.F. Oscillator

Theory:
The terminal behaviour of two-port devices (i.e. having the input and output terminals separately) is specified by two voltages and two currents. The box in the fig below represents port network.

The quantities

are called the h or hybrid parameters. =0 =0

The Notation: The following standard subscript notations (as given usually in transistors manuals) have been followed here, i = 11 = input f = 21 = forward transfer o = 22 = output r = 12 = reverse transfer

In the case of transistors, another subscript (b, e or c) is added to designate the type of configuration. for example:

To derive a hybrid model of a transistor, let us consider the common emitter connection, shown in Fig. 2. The variables ib, ic, vb & vc represent the total instantaneous currents and voltages. We can select current ib and voltage as independent variable, and vb and ic as the dependent variables. If the network is linear we may write as,

Where,

Fig-2

Procedure: a. Switch on the supply with the help of the MS switch. b. To set the desired biasing condition, first connect the ammeter as shown in the fig 3. And now with the help of P1 and P2 the desired biasing current & voltage can be adjusted say Ic = 2mA and Vce = -5V. c. Connect A.F. Oscillator between the terminals 1 & 2 and set the frequency at 1 khz and voltage of about 10mV. d. Switch ON S1. e. Measure voltages V23, V31, V46 and V56 with the help of VTVM. f.
g.

Disconnect the A.F. Oscillator and now connect it across the terminals 5 and 6. Set the frequency at 1 khz and voltage of about 200 to 300 mV. Switch OFF S1 , Measure Voltages V32, V46, and V56 with the help of VTVM.

Formulae Used: hie = Vb/Ib , Vc = 0 => hie = R1V23/V31 ohms hfe = Ic/Ib , Vc = 0 => hfe = R1(V46 V56)/R2V31 hre =Vb/Vc , Ib = 0 => hre = V32/V46 hoe =Ic/Vc , Ib = 0 => hoe = (V56 V46)/R2V46 mhos (2) (3) (4) (5)

hie The input impedance of the transistor (corresponding to the emitter resistance re). hre Represents the dependence of the transistor's IBVBE curve on the value of VCE. It is usually very small and is often neglected (assumed to be zero). hfe The current-gain of the transistor. 1/hoe The output impedance of transistor. The parameter hoe usually corresponds to the output admittance of the bipolar transistor and has to be inverted to convert it to impedance. Observations:(i) S1 is ON V23 = 9.98mV

V31 = 0.28 mV V46 = 2.04 mV V56 = 0.2 mV (ii) S1 is OFF V32 = 17mV V46 = 89mV

V56 = 247mV Calculations & Results: hie = R1V23/V31 ohms =199.6 ohms hfe = R1(V46 V56)/R2V31 = 36.8 hre = V32/V46 = 0.191 hoe = (V56 V46)/R2V46 mhos = 17.752*10-5 mhos

Discussion And Conclusions:-

The h parameter helps in determining the various factor for a transistor like current amplification , input impedence , conductance etc.

As shown, the h-parameters with lower-case subscripts signify AC conditions or analyses. For DC conditions they are specified in upper-case.

For the CE configutation, an approximate h-parameter model is commonly used which further simplifies the circuit analysis.

It should also be noted that the h-parameter model is suited to low-frequency, smallsignal analysis. For high-frequency analyses the inter-electrode capacitances that are important at high frequencies must be added.