Simple Gain Leveler for the ALM-11036 LNA

Application Note 5540

Introduction
The ALM-11036/11136/11236/11336 are low noise amplfiers (LNA) with built-in bypass switches that operate in the frequency range of 776-870 MHz, 870-915 MHz, 1710-1850 MHz, and 1850-1980 MHz respectively. As shown in Figure 1, pins 28 and 30 allow an external function block to be connected between the LNA and the output-side switch. With this capability, an external function block can be switched in unison with the LNA. Function blocks that can be added include an attenuator or limiter. Pins 28 and 30 are internally AC-coupled, eliminating two DC blocking capacitors that would otherwise be required in the external function block. If an external function block is not needed, the two pins must be tied together to complete the signal path.
dB 30 Avago ALM 11X36 LNA IN LNA PATH BYPASS PATH OUT VVA 28

Gain variability between amplifier devices can be corrected with an external voltage-variable attenuator (VVA). Although the VVA function can be easily implemented using the HSMP-3816/3866 PIN diode quad[1,2] or the ALM-38140 module, their large dynamic range (DR > 30 dB) is wasted because the ALM-11036 gain specification window is less than 3 dB. Since the required dynamic range is small, a simple 1-diode TEE topology[3] can replace a conventional VVA for better cost and space saving. Additionally, this topology has significantly lower minimum attenuation than conventional topologies and therefore less potential impairment of the cascade noise figure.

Table 1. The 1-diode TEE uses 64% to 72% fewer circuit elements than other VVA topologies.
Number of Circuit Elements Topology
3-diode PI [4, 5] Waugh 4-diode PI [6, 7] Bridged TEE [8] 1-diode TEE

Active
4 4 2 1

Passive
14 10 12 4

Total
18 14 14 5

Figure 1. ALM-11x36 LNA with an external VVA for gain leveling

Design Methods and Material

This section is divided into three parts: variable resistance description, VVA circuit design and LNA-VVA integration. A PIN diode in a dual cathode SOT-323 package style, shown in Figure 2, was used to implement the variable resistance because of its better high frequency performance compared to a conventional single-cathode package. The parallel cathode paths give half the inductance, and by inspection of the package model, the sum of the parasitic inductances is Ll + ((Lb + Ll)/2). Using the manufacturer supplied model parameters[9], the total package inductance is approximatley1.1 nH. However, when the two bond-wires are arranged such that their current flow is in opposite directions, the resultant mutual inductance, M, lowers the effective bond-wire inductance to (Lb M)/2[10], and the actual total inductance could be considerably lower than the simple calculation indicates as it did not account for mutual inductance.
Cathode Leads

The fixed series resistors, R1 and R2, shown in Figure 3, determine the VVA dynamic range and minimum attenuation. For a target dynamic range or minimum attenuation, the series resistances can be determined from the design chart shown in Figure 4. The charts dynamic range is computed based on the requirement for better than -10 dB return loss. Because L1 chokes the DC supply, a larger inductance will minimize RF loss, with the caution that its self resonant frequency must be higher than the highest operating frequency. A multilayer inductor was chosen to save cost because simulation predicted that inductor Q does not significantly impact the VVA circuit loss, as shown in Figure 5. To use voltage drive instead of the suggested current drive, Ic, replace inductor L1 with a resistor of a suitable value.

3 Ll = 0.5 nH CHI Lb = 0.7 nH Ll = 0.5 nH 1 2 (c)

Lb = 0.7 nH Diode SOT-323 Anode Wires Ll = 0.5 nH

(a)

(b)

Figure 2. (a) Simplified HSMP-481B dual-cathode PIN diode circuit; (b) SOT-323 internal construction; and (c) SOT-323 package model highlighting the opposing current flow in the bond-wires

18 16 IN R1 R2 OUT Amin, DR (dB) 14 12 10 8 6 4 2 0 0 Figure 3. Circuit diagram of a 1-diode TEE VVA 5 10 Rs (ohm) Figure 4. Simulated dynamic range (DR) and minimum attenuation (Amin) vs. series resistance (Rs) 15 20 25 Amin DR (dB)

L1 Ic D1 C1

-0.87 -0.88 -0.89 dB(S(2,1)) -0.90 -0.91 -0.92 -0.93 10 20 30 40 Toko LL160 8

Min A vs L1's Q

The VVA can be inserted into the ALM-11036 signal path by opening the connection between pin 28 and pin 30 (Figure 6). Retrofitting the VVA to the ALM-11x36 demonstration board required copper traces to be modified (Figure 7). The external components associated with the LNA section were not changed.

CCI 0603CS 50 Ql 60 70 80 90 100

Figure 5 Simulated minimum attenuation at 1.8 GHz versus L1s unloaded Q. The typical Q of a multilayer (Toko LL1608) inductor and a wire-wound (Coilcraft 0603CS) inductor are shown.
VVA Vdd (5V) D1 Z1 R1 C1 C2 27,29,31,32,34,35,36 EXT_P 33 1,2, 30 R2 L1 Ic 0-1mA C3

EXT_P 28 24,25,2

BIAS 5V 5V 0V

4 RFi 50-Ohms TL 5,6,7, 8

23 50-Ohms TL 19,20,21,2 2

Figure 8. Photograph of the assembled demonstration board. The PCB measures 1 x 1.25.
RFout

Table 2. Demonstration Board Part List

Module Outline, 9,10,11,12,13,14,15,16,17,1

Part
C1 C2 D1 J1 J2 J3 J4
J4

Value
2.2 F 100 pF HSMP-481B 142-0701-881 142-0701-881

Remark
0805 0402 SMA edge launch SMA edge launch Molex header 2x2 Molex header 2x2

Figure 6. ALM-11036 LNA and external VVA circuit

Z1

GND
D1 L1

C1

wire Ic
C3

L1 Q1 R1 R2 Z1

82 nH ALM-11036 5.1 R 5.1 R 0R

Toko LL1608 0402 0402 0603

36 Gnd

35 Gnd

34 Gnd

33 Vdd

R1
32 31 30 29 28

27

1 2 3 4 5 6 7 8 10 11 12 13 14 15 16 17 18 9

26 Gnd 25 Gnd

Mylar tape

R2

24 Gnd 23 RF_OUT 22 Gnd 21 Gnd 20 Gnd 19 Gnd

Figure 7. Retrofitting the VVA on the ALM-11x36 demonstration board 3

Results and Discussion

The experimental results confirm that the ALM-11036s expected range of gain variation can be compensated using the 1-diode TEE VVA. The input and output terminals are non-reflective over the VVA dynamic range. The minimum attenuation is significantly better than conventional VVAs, and the linearity is as good. Sweeping the control current, Ic, from 0 mA to 1 mA changes the gain by 3 dB at the ALM-11036s nominal frequency of 849 MHz (Figure 9). Over the devices guaranteed bandwidth of 776-870 MHz, the dynamic range is at least 2.8 dB. Because the ALM-11036 has a 15.6 dB nominal gain (Figure 10), the VVA minimum attenuation (at Ic = 0 mA) can be calculated from the difference: for example, 15.6 dB 14.5 dB = 1.1 dB. Both the control current range and the minimum attenuation compare favorably with the PI topology that typically needs at least +10 mA to reach a -4 dB minimum attenuation specification[11]. The frequency response flatness is within 0.3 dB (Figure 10). Over the frequency range, the input return loss is better than -18 dB (Figure 11), and the output return loss is better than -14 dB (Figure 12).
G vs freq @ Ic (mA) 0.5 1.0 wo VVA dB 0 16.0 15.5 15.0 14.5 14.0 13.5 13.0 12.5 12.0 11.5 11.0 Centre: 820.0 MHz 01/11/2011 15:49:30

G vs. Ic @ f (MHz) dB 776 849 870 14.5 14.0 13.5 13.0 12.5 12.0 11.5 11.0 10.5 10.0 9.5 Start: 0 A 01/Nov/2011 Figure 9. Gain vs. control current as a function of frequency

Stop: 1.0 mA sn01

Span: 100.0 MHz sn01, 10 m ~ 6 g 401p

Figure 10. Gain vs. frequency as a function of control current. The gain of the LNA alone (without the VVA) is shown for reference.

IRL vs. f @ Ic (mA) 0.5 1.0 wo VVA dB 0 -18 -20 -22 -24 -26 -28 -30 -32 -34 -36 -38 Centre: 820.0 MHz 02/11/2011 13:40:47

Span: 100.0 MHz sn1, 10 m ~ 6 g 401p

ORL vs control current @ frequency (MHz) dB 776 820 870 -14 -16 -18 -20 -22 -24 -26 -28 -30 -32 -34 Start: 0 A 111117

Stop: 1.0 mA #01

Figure 11. Input return loss vs. frequency as a function of control current

Figure 12. Output return loss vs. control current as a function of frequency

The ALM-11036 has a 21.3 dBm input third-order intercept point (IIP3). Although the IIP3 of the LNA-VVA cascade was not measured, it is expected to remain the same as the LNAs because the VVAs linearity is very high. When the VVA was tested separately using 869 MHz and 871 MHz input signals at 25 dBm, the output third-order intercept point (OIP3) measured better than 53.5 dBm (Figure 13). The LNA-VVA cascade OIP3 is expected to increase linearly with frequency as it does with other silicon PIN diodebased VVAs[12]. The distortion is caused by RF currents modulating the diodes I-layer charge density. Therefore the distortion increases with attenuation, because a larger fraction of the RF current is diverted from the load to the diode.
OIP3 vs attenuation at 870 +/- 1 MHz OIP3 upper dBm OIP3 lower 58.0 57.5 57.0 56.5 56.0 55.5 55.0 54.5 54.0 53.5 53.0 Start: 1.0 dB Stop: 6.0 dB 110726 3B#11 Pi = 25 dBm, RL = 30 dBm, A = 50 dB, RBW = 300 Hz, AVG = 4 Figure 13. VVA output third-order intercept point vs. attenuation (870 MHz 1 MHz tones). Both lower and upper intermodulation products are shown.

Conclusion
A very simple VVA can be realized using only one PIN diode as the variable resistance. Connecting the VVA to the two dedicated pins on the ALM-11036 allows the gain parameter to be adjusted for batch variation. The 1-diode TEE topology offers the advantage of using only one-third of the components of the equivalent Waugh 4-diode PI and Bridge-TEE VVAs. Although the dynamic range is limited, it is sufficient to cover the ALM-11036s gain window. Compared to conventional topologies, the 1-diode TEE VVA has better minimum attenuation and comparable linearity, yet operates at a fraction of the current. When cascaded with an LNA, the VVAs near zero minimum attenuation results in less impairment of the overall noise figure. With minor changes to the VVA component values to reflect the different operating frequencies, the 1-diode TEE topology can be used with other ALM-11x36 series LNAs.

Reference
HSMP-3816 quad PIN diode attenuator 300 kHz to 3 GHz in SOT 25 package, Avago Technologies product specification [Online] Available: http://www.avagotech.com/pages/en/rf_microwave/ 2. HSMP-3866 quad PIN diode attenuator 300 kHz to 3 GHz in SOT 25 package, Avago Technologies product specification [Online] Available: http://www.avagotech.com/pages/en/rf_microwave/ 3. C. L. Lim, Wideband voltage variable attenuator with fewer components, Microwave Journal, Dec. 2011. 4. U. L. Rohde and D. P. Newkirk, RF/microwave circuit design for wireless applications, New York, NY: Wiley, 2000, pp 151-152, [Online] Available: http://books.google.com 5. Capacitance diodes, tuner diodes, diode switches, PIN diodes: basics and applications, Germany: ITT, 1976, pp. 55-57. 6. Waugh R W, A Low Cost Surface Mount PIN Diode PI Attenuator, Microwave Journal, May 1992, pp 280-284. 7. A low-cost surface mount PIN diode attenuator, Avago Technologies application note AN1048, May 1996 [Online] Available: http://www. avagotech.com/pages/en/rf_microwave/ 8. K. W. Kobayashi, A. K. Oki, D. K. Umemoto, S. Claxton and D. C. Streit, GaAs HBT PIN diode attenuators and switches, in IEEE Int. Microwave Symp. Digest, 1993, pp. 349-352. 9. Linear models for diode surface mount packages, Avago Technologies application note 1124, Jan. 2007 [Online] Available: http://www. avagotech.com/pages/en/rf_microwave/ 10. J. Rogers and C. Plett, Radio Frequency Integrated Circuit Design. Norwood, MA: Artech House, 2003, ch. 5. 11. HSMP-3816 quad PIN diode PI attenuator 300 kHz to 3 GHz in SOT25 package, Avago Technologies product specification, Nov. 2005 [Online] Available: http://www.avagotech.com/pages/en/rf_microwave/ 12. R. H. Caverly, Distortion in RF and microwave control devices, Microwave Journal, Dec. 1997, pp. 77-82. 1.

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