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4N35/ 4N36/ 4N37/ 4N38

Vishay Semiconductors

Optocoupler, Phototransistor Output, With Base Connection

Features
Isolation Test Voltage 5300 VRMS Interfaces with common logic families Input-output coupling capacitance < 0.5 pF Industry Standard Dual-in line 6-pin package Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
i179004

A C NC

1 2 3

6 B 5 C 4 E

Agency Approvals
Underwriters Laboratory File #E52744 DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1

e3

Pb
Pb-free

Applications
AC mains detection Reed relay driving Switch mode power supply feedback Telephone ring detection Logic ground isolation Logic coupling with high frequency noise rejection

These isolation processes and the Vishay ISO9001 quality program results in the highest isolation performance available for a commecial plastic phototransistor optocoupler. The devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers.
Note: Designing with data sheet is cover in Application Note 45

Order Information
Part 4N35 4N36 4N37 4N38 4N35-X006 4N35-X007 4N35-X009 4N36-X007 4N36-X009 4N37-X006 4N37-X009 Remarks CTR > 100 %, DIP-6 CTR > 100 %, DIP-6 CTR > 100 %, DIP-6 CTR > 20 %, DIP-6 CTR > 100 %, DIP-6 400 mil (option 6) CTR > 100 %, SMD-6 (option 7) CTR > 100 %, SMD-6 (option 9) CTR > 100 %, SMD-6 (option 7) CTR > 100 %, SMD-6 (option 9) CTR > 100 %, DIP-6 400 mil (option 6) CTR > 100 %, SMD-6 (option 9)

Description
This data sheet presents five families of Vishay Industry Standard Single Channel Phototransistor Couplers.These families include the 4N35/ 4N36/ 4N37/ 4N38 couplers. Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. These couplers are Underwriters Laboratories (UL) listed to comply with a 5300 VRMS isolation test voltage. This isolation performance is accomplished through Vishay double molding isolation manufacturing process. Comliance to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending partial discharge isolation specification is available for these families by ordering option 1.

For additional information on the available options refer to Option Information.

Document Number 83717 Rev. 1.5, 27-Jan-05

www.vishay.com 1

4N35/ 4N36/ 4N37/ 4N38


Vishay Semiconductors Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.

Input
Parameter Reverse voltage Forward current Surge current Power dissipation 10 s Test condition Symbol VR IF IFSM Pdiss Value 6.0 60 2.5 100 Unit V mA A mW

Output
Parameter Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector current (t 1.0 ms) Power dissipation Test condition Symbol VCEO VEBO IC IC Pdiss Value 70 7.0 50 100 150 Unit V V mA mA mW

Coupler
Parameter Isolation test voltage Creepage Clearance Isolation thickness between emitter and detector Comparative tracking index per DIN IEC 112/VDE0303,part 1 Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature Operating temperature Junction temperature Soldering temperature max. 10 s dip soldering: distance to seating plane 1.5 mm RIO RIO Tstg Tamb Tj Tsld Test condition Symbol VISO Value 5300 7.0 7.0 0.4 175 1012 1011 - 55 to + 150 - 55 to + 100 100 260 C C C C Unit VRMS mm mm mm

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Document Number 83717 Rev. 1.5, 27-Jan-05

4N35/ 4N36/ 4N37/ 4N38


Vishay Semiconductors Electrical Characteristics
Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.

Input
Parameter Forward voltage1) Test condition IF = 10 mA IF = 10 mA, Tamb = - 55 C Reverse current1) Capacitance
1)

Symbol VF VF IR CO

Min 0.9

Typ. 1.3 1.3 0.1 25

Max 1.5 1.7 10

Unit V V A pF

VR = 6.0 V VR = 0, f = 1.0 MHz

Indicates JEDEC registered value

Output
Parameter Collector-emitter breakdown voltage1) 4N36 4N37 4N38 Emitter-collector breakdown voltage1) Collector-base breakdown voltage1) 4N36 4N37 4N38 Collector-emitter leakage current1) 4N36 VCE = 10 V, IF=0 VCE = 60 V, IF = 0 VCE = 30 V, IF = 0, Tamb = 100 C 4N37 4N38 4N35 4N36 4N37 VCE = 60 V, IF = 0, Tamb = 100 C Collector-emitter capacitance
1)

Test condition IC = 1.0 mA

Part 4N35

Symbol BVCEO BVCEO BVCEO BVCEO BVECO

Min 30 30 30 80 7.0 70 70 70 80

Typ.

Max

Unit V V V V V V V V V

IE = 100 A IC = 100 A, IB = 1.0 A 4N35

BVCBO BVCBO BVCBO BVCBO ICEO ICEO ICEO ICEO ICEO ICEO ICEO ICEO CCE

VCE = 10 V, IF = 0

4N35

5.0 5.0 5.0

50 50 50 50 500 500 500

nA nA nA nA A A A A pF

4N38

6.0 6.0

VCE = 0

Indicates JEDEC registered value

Coupler
Parameter Resistance, input to output1) Capacitance (input-output)
1)

Test condition VIO = 500 V f = 1.0 MHz

Symbol RIO CIO

Min 1011

Typ. 0.5

Max

Unit pF

Indicates JEDEC registered value

Document Number 83717 Rev. 1.5, 27-Jan-05

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4N35/ 4N36/ 4N37/ 4N38


Vishay Semiconductors Current Transfer Ratio
Parameter DC Current Transfer Ratio1) Test condition VCE = 10 V, IF = 10 mA Part 4N35 4N36 4N37 VCE = 10 V, IF = 20 mA VCE = 10 V, IF = 10 mA, TA = - 55 to + 100 C 4N38 4N35 4N36 4N37 4N38
1)

Symbol CTRDC CTRDC CTRDC CTRDC CTRDC CTRDC CTRDC CTRDC

Min 100 100 100 20 40 40 40

Typ.

Max

Unit % % % %

50 50 50 30

% % % %

Indicates JEDEC registered value

Switching Characteristics
Parameter Switching
1)

Test condition IC = 2 mA, RL = 100 , VCC = 10 V

Symbol ton, toff

Min

Typ. 10

Max

Unit s

time1)

Indicates JEDEC registered value

Typical Characteristics (Tamb = 25 C unless otherwise specified)


1.4 1.3
VF - Forward Voltage - V NCTR - Normlized CTR

1.5 TA = 55C TA = 25C


Normalized to: Vce=10 V, IF=10 mA, TA=25C CTRce(sat) Vce=0.4 V

1.2 1.1 1.0 0.9 0.8 0.7 .1 1 10 IF - Forward Current - mA 100 TA = 85C

1.0
TA=25C

0.5
NCTR(SAT) NCTR

0.0 0
i4n25_02

1 10 IF - LED Current - mA

100

i4n25_01

Figure 1. Forward Voltage vs. Forward Current

Figure 2. Normalized Non-Saturated and Saturated CTR vs. LED Current

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Document Number 83717 Rev. 1.5, 27-Jan-05

4N35/ 4N36/ 4N37/ 4N38


Vishay Semiconductors

1.5
NCTR - Normalized CTR

Ice - Collector Current - mA

Normalized to: Vce=10 V, IF=10 mA, TA=25C CTRce(sat) Vce=0.4 V

35 30 25 20 15 10 5 0 0 10 20 30 40 50 60 70C 25C 85C 50C

1.0
TA=50C

0.5
NCTR(SAT) NCTR

0.0 .1 1 10 IF- LED Current - mA 100

IF - LED Current - mA
i4n25_06

i4n25_03

Figure 3. Normalized Non-saturated and Saturated CTR vs. LED Current

Figure 6. Collector-Emitter Current vs. Temperature and LED Current

1.5
NCTR - Normalized CTR

Iceo - Collector-Emitter - nA

Normalized to: Vce=10 V, IF=10 mA, TA=25C CTRce(sat) Vce=0.4 V

10 10 10

5 4 3

1.0
TA=70C

10 2 10 10
1 0

Vce = 10 V Typical

0.5
NCTR(SAT) NCTR

10 1 10 2 20 0 20 40 60 80 100

0.0 .1 1 10 IF - LED Current - mA 100

TA - Ambient Temperature - C
i4n25_07

i4n25_04

Figure 4. Normalized Non-saturated and saturated CTR vs. LED Current

Figure 7. Collector-Emitter Leakage Current vs.Temp.

1.5
NCTR - Normalized CTR

NCTRcb - Normalized CTRcb

Normalized to: Vce=10 V, IF=10 mA, TA=25C CTRce(sat) Vce = 0.4 V

1.5
Normalized to: Vcb=9.3 V, IF=10 mA, TA=25C

1.0
TA=85C

1.0

0.5
NCTR(SAT) NCTR

0.5 25C 50C 70C 0.0 .1 1 10 100

0.0 .1 1 10 IF - LED Current - mA 100

IF - LED Current - mA
i4n25_08

i4n25_05

Figure 5. Normalized Non-saturated and saturated CTR vs. LED Current

Figure 8. Normalized CTRcb vs. LED Current and Temp.

Document Number 83717 Rev. 1.5, 27-Jan-05

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4N35/ 4N36/ 4N37/ 4N38


Vishay Semiconductors

10
tPLH - Propagation Delay - s

1000

2.5
tPHL - Propagation Delay - s

Normalized to: IF=10 mA, TA=25C


Normalized Photocurrent

IF =10 mA,TA=25C VCC =5.0 V, Vth=1.5 V 100 tPHL 2.0

1 0.
Nib, TA=20C Nib, TA= 25C Nib, TA= 50C Nib, TA= 70C

10 tPLH

1.5

0.01 .1
i4n25_09

1 .1
i4n25_12

1.0 1 10 100

10

100

RL - Collector Load Resistor - k

IF - LED Current - mA

Figure 9. Normalized Photocurrent vs. IF and Temp.

Figure 12. Propagation Delay vs. Collector Load Resistor

1.2
NHFE - Normalized HFE

70C

IF

1.0 20C 0.8

25C

tD VO tR tPLH VTH=1.5 V tPHL tS tF

0.6

Normalized to: Ib=20 A, Vce=10 V, TA=25C

0.4
i4n25_10

10 100 Ib - Base Current - A

1000
i4n25_13

Figure 10. Normalized Non-saturated HFE vs. Base Current and Temperature

Figure 13. Switching Timing

NHFE(sat) - Normalized Saturated HFE

1.5 Normalized to: Vce=10 V, Ib=20 A T A =25C


F=10 KHz, DF=50% VCC = 5.0 V

70C 1.0 25C 20C 0.5

50C

RL VO

Vce=0.4 V 0.0 1 10 100 1000


i4n25_14

IF=1 0 mA

i4n25_11

Ib - Base Current - A

Figure 11. Normalized HFE vs. Base Current and Temp.

Figure 14. Switching Schematic

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Document Number 83717 Rev. 1.5, 27-Jan-05

4N35/ 4N36/ 4N37/ 4N38


Vishay Semiconductors Package Dimensions in Inches (mm)
For 4N35/36/37/38..... see DIL300-6 Package dimension in the Package Section. For products with an option designator (e.g. 4N35-X006 or 4N36-X007)..... see DIP-6 Package dimensions in the Package Section.

DIL300-6 Package Dimensions

14770

DIP-6 Package Dimensions


3 .248 (6.30) .256 (6.50) 4 5 6
ISO Method A

pin one ID

.335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55)
i178004

.048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81)

.300 (7.62) typ.

18 .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 39 .010 (.25) typ. .300.347 (7.628.81)

.114 (2.90) .130 (3.0)

Document Number 83717 Rev. 1.5, 27-Jan-05

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4N35/ 4N36/ 4N37/ 4N38


Vishay Semiconductors

Option 6
.407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .028 (0.7) MIN.

Option 7
.300 (7.62) TYP .

Option 9
.375 (9.53) .395 (10.03) .300 (7.62) ref.
.180 (4.6) .160 (4.1) .0040 (.102)

.0098 (.249)
.315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .331 (8.4) MIN. .406 (10.3) MAX.

.012 (.30) typ.

.020 (.51) .040 (1.02)

.315 (8.00) min.

15 max.

18450

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Document Number 83717 Rev. 1.5, 27-Jan-05

4N35/ 4N36/ 4N37/ 4N38


Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Document Number 83717 Rev. 1.5, 27-Jan-05

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Legal Disclaimer Notice


Vishay

Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000 Revision: 08-Apr-05

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