Annual Technical Report 2008

Year Ended March 31, 2009

OITDA
Optoelectronic Industry and Technology Development Association

This Annual Technical Report was subsidized by JKA through its Promotion funds from KEIRIN RACE.

CONTENTS
Message from OITDA 1 Optoelectronic Industry Trends 2 Optoelectronic Technology Trends 17 Technological Strategy Development 31 Promotion of Technology Development 34 Founding New Types of Business Standardization 40 Study Groups 52 57 86 Educational and Public Relations Activities 80 Main Committees in FY 2008 Supporting Members 88

Yasuhisa Odani Chief Executive Director Optoelectronic Industry and Technology Development Association (OITDA) It is my pleasure to present to you the latest issue of the Annual Technical Report 2008, which outlines the surveys and research and development activities of OITDA in FY 2008. For the optoelectronic industry, FY 2008 progressed relatively steadily until around the Beijing Olympics with a forecast annual growth rate above 4%, but as you all know, we faced a very tight situation in the second half similar to other industries, due to the economic crisis which began in the U.S. As a result, we experienced a 1.3% annual decline, the rst decline in three years. The overall optoelectronic industry was greatly impacted by a decline in U.S. demand which drove growth until last year with large contributions from exports of at-panel displays and digital cameras, and a decline in the laser processing market due to slowing capital investments of automotive and semiconductor industries. However, looking at optoelectronic technologies, we see many budding technologies with potential for our industry s development, such as optical network technologies related to FTTH which is aiming for 20 million subscribers, new products such as Blu-ray Disc and OLED displays, and the demand expected for photovoltaic cells and LED illumination for energy conservation and environmental aspects. Also, at-panel displays, digital cameras and laser processing equipment are essentially growth industries. Therefore if we can overcome the current difcult period, we can expect to continue as a core industry and technologies in Japan s economy. Among various promising optoelectronic technologies, OITDA has selected several with the potential to develop into industries. In order to turn such potential into reality, we actively address the following priority issues: (1) research and study of current and future trends of the optoelectronic industry; (2) promotion of technological development; (3) promotion of standardization; and (4) creation of new businesses. In FY 2008, we directed our efforts to conduct these issues as in previous years and, based on the results of such efforts, also conducted dissemination of technology, international cooperation and provision of information. Details of the activities and outcomes of individual issues are presented in the report. Here, I would like to introduce noteworthy events in FY 2008. First, we participate in the Green IT Promotion Council which promotes the Green IT Initiative, one of the highlights of the government s measures against global warming. We created an Optoelectronic Technology Roadmap for energy conservation, and did survey research on silicon photonics, a new technology fusing silicon technologies with optoelectronic technologies to achieve miniaturization and energy conservation. Moreover, as R&D projects, we continued to promote development with Innovative Nanophotonics Compornents Development, Development of Next-generation High-efciency Network Device Technology, and Nano-mastering Technology Development Project for Terabyte Storage. We also began two standardization R&D projects: Standardization of Generics and Measuring Method of Laser Diodes for Sensing Applications and Standardization of Mechanical Reliability Evaluation Method for SFP (Small Form Pluggable) Optical Transmitter module. In order to support the growth of the optoelectronic industry and technologies, we at OITDA will continue to pursue our activities under the guidance of the Ministry of Economy, Trade and Industry and other governmental organizations, including the New Energy and Industrial Technology Development Organization, the JKA and the Japanese Standards Association, with the understanding and cooperation of our supporting members and many other people from the business world, academic community, and so forth. We look forward to your continued support and cooperation.

Optoelectronic Industry Trends

The Optoelectronic Industry and Technology Development Association (OITDA) was established in 1980, and since then, thanks to a great deal of support and cooperation from the afliated members and enterprises, OITDA has annually conducted a Survey of the Trends of the Optoelectronic Industry to analyze the current scale of domestic production and estimate future prospects, and at the same time to grasp tendencies and other factors related to optoelectronic resources and optoelectronic industries in other countries. It is highly regarded as basic information on industry trends. The current global recession is presenting challenges we have never experienced, and the optoelectronic industry has also come to a critical moment where it will continue as a saturated industry, or become a motor giving birth to a new era. In this situation, we believe that it is more important than ever to have an accurate grasp of the comprehensive trends in the optoelectronic industry and optoelectronic technology and to prepare mid-term/long-term research and development and business strategies. For the survey of optoelectronic industry trends, the following seven basic policies were set by the Optoelectronic Industry Trend Research Committee and activities were conducted accordingly. 1. Conduct activities through eight specialist committees, including seven eld-specic research committees and the Statistics Analysis Research Committee; 2. For the statistics on domestic production, perform questionnaire surveys on (1) actual production in FY 2007, (2) estimates for FY 2008 and (3) prospects for FY 2009; 3. Conduct a questionnaire survey on optoelectronic industry resources; 4. Attend the annual meeting of International Optoelectronics Association to study overseas trends in the optoelectronics industry 5. Summarize market trends in the optoelectronics industry in a timely manner and make the information available on the web version of OptoNews (Research & Analysis) 6. Continuous discussions about ways to improve the coverage, collection rate, and reliability of the questionnaire survey; and 7. Discussion of the survey items of the questionnaire by eld-specic research committees and establishing consistency by the Statistics Analysis Research Committee. In addition, this work was subsidized by JKA through its Promotion funds from KEIRIN RACE. industry was conducted as described below. Questionnaire surveys were performed from early October 2007 to the end of January 2009 with the participation of 289 domestic enterprises manufacturing optoelectronicrelated products (optoelectronic equipment, components) to determine actual production in FY 2007, estimated production for FY 2008, and prospects for FY 2009. Based on the results of the questionnaire, discussions were conducted by the seven eld-specic research committees and the Statistics Research Analysis Committee to compile the domestic production of optoelectronic industry. The optoelectronic industry is categorized into the following seven elds by combining optoelectronic equipment and components: 1. Optical communication Optical transmission equipment/systems, optical ber splicing equipment, light-emitting equipment, photo detectors, optical bers, optical connectors, optical passive equipment, etc. 2. Optical storage Equipment (read-only and recordable types), media (write once read many types, rewritable types), semiconductor lasers, etc. 3. Input / Output Optical printers, digital copiers, digital cameras, digital camcorders, photo detector arrays, etc. 4. Displays at panel displays, projection displays, LED (for displays), etc. 5. Photovoltaic cells Photovoltaic cells 6. Laser processing Laser processing equipment, medical laser equipment, gas laser, etc. 7. Measuring and sensing Optical measuring equipment, optical sensing equipment, etc. 8. Other Individual photo detectors for non-communication uses, hybrid optical equipment, etc. 1.2 Survey of Domestic Production in FY 2007, FY 2008 and FY 2009 Table 1 shows the actual domestic production in FY 2007, estimated production for FY 2008 and projected production for FY 2009. Figure 1 shows the contribution of each eld to the increase in the domestic production of the optoelectronic industry over the three years. Actual production recorded in FY 2007: 8,070.5 billion yen, growth rate: 2.6% Digital cameras and at-panel displays support growth of the optoelectronics industry. Optical communication and laser processing continued to be rm. Also, photovoltaic cells recovered.
2

1.

1.1 Survey on the Domestic Production of the Optoelectronic Industry A survey on the domestic production of the optoelectronic

Trends in Domestic Production for the Optoelectronic Industry

Optoelectronic Industry Trends

Table 1 Domestic Production of the Optoelectronic Inductry (total)

Product Items Optical Communication Field Optical Communications Equipment Truck System (including MUX) Metro System Access System Optical LAN, Wireless LAN Picture Transmission (CATV, etc) Optical Fiber Amplifier Others Optical Fiber Splicers Laser Diodes for Communication LEDs for Communication Photo Detectors Optical Transmissiton Modules Optical Fiber Cables Optical Connectors Hybrid Optical Devices Optical Passive Components Optical Circuits Optical Storage Field Optical Disk Optical Equipment Optical Components Optical Equipment Equipment Read-only (CD, MD, DVD, BD/HD DVD Recordable (MD, MO, CD, DVD, BD/HD DVD) Media Others (Optical Head, Processing & 53,018 2,101,926 1,735,842 FY2007 Production Actual Growth Rate % in million yen 537,474 0.6 248,645 8.7 103,301 13.4 46,270 9.1 51,192 19.2 4,970 84.2 15,337 38.1 17,456 93.9 10,119 1.9 17,088 41.0 38,877 17.6 1,174 1.3 4,131 24.3 53,926 38.7 110,848 0.1 26,771 1.1 1,681 77.5 30,188 2.9 4,145 9.8 601,211 9.6 548,193 6.4 463,176 317,441 145,735 55,684 29,333 1.5 4.1 4.8 9.4 45.5 33.3 5.8 4.1 6.9 5.4 23.3 2.5 9.2 5.9 130.2 15.0 3.5 8.6 10.4 9.2 15.3 0.9 4.9 0.3 0.6 4.7 1.4 16.1 4.6 7.2 4.6 0.4 0.2 7.8 8.7 7.8 24.2 23.5 32.7 10.7 11.8 19.9 8.5 9.3 5.5 38.5 13.7 46,082 1,904,491 1,543,058 FY2008 Production Estimate in million yen Growth Rate % 574,003 6.8 271,501 9.2 107,948 4.5 48,481 4.8 56,522 10.4 5,119 3.0 19,726 28.6 23,557 35.0 10,148 0.3 16,664 2.5 40,284 3.6 1,047 10.8 4,450 7.7 53,249 1.3 119,920 8.2 30,104 12.5 1,766 5.1 29,891 1.0 5,127 23.7 610,876 1.6 564,794 3.0 485,177 265,760 219,417 55,567 24,050 4.8 16.3 50.6 0.2 18.0 13.1 9.4 11.1 0.6 18.4 0.8 13.9 7.6 23.9 4.3 1.3 1.6 4.0 5.9 8.4 3.6 13.7 64.5 0.1 0.5 2.3 4.5 2.9 26.2 21.5 22.0 22.2 5.4 25.8 1.0 1.6 21.5 23.8 5.1 3.2 3.6 6.3 17.4 16.1 9.3 3.7 29.8 47,653 1,776,868 1,414,663 FY2009 Production Prospect in million yen Growth Rate % 588,552 2.5 277,255 2.1 107,407 0.5 43,274 10.7 68,130 20.5 5,120 0.0 23,879 21.1 22,531 4.4 6,914 31.9 16,664 0.0 37,836 6.1 1,349 28.8 4,807 8.0 65,825 23.6 120,693 0.6 28,567 5.1 1,449 18.0 28,980 3.0 5,127 0.0 609,312 0.3 561,659 0.6 477,485 246,981 230,504 59,026 25,148 1.6 7.1 5.1 6.2 4.6 3.4 6.7 8.3 13.1 24.8 0.1 2.5 5.4 9.0 13.8 0.2 2.4 5.2 6.3 6.6 4.9 6.4 46.1 7.5 8.9 0.0 17.1 2.1 6.6 11.4 13.9 3.0 3.8 26.5 8.6 2.7 0.3 1.8 12.5 2.5 2.4 4.6 1.3 2.7 1.3 0.8 7.0

Inspection Equipment) Laser Diodes Input/Output Field Optical I/O Equipment Optical Printers Digital MFP (FAX machine, Copier, MFP) Bar Code Reader Image Scanners Digital Still Camera Digital Camcorder Others Photo Detectors Display Field Display Equipment Flat Panel Display LCD PDP Projection Display Large Screen (60 inches or more) Display Devices (Panel, Module) (Module) LEDs Photovitaic Cell Field Laser Processing Field Laser Processing Equipment CO2 Lasers Solid State Lasers Excimer Lasers Others Medical Laser Equipment Oscillators Gas Lasers Solid State Lasers Sensing/Measuring Field Optical Sensors Optical Measuring Instruments Others Field Hybrid Optical Devices Optical Fibers, Image Fibers, etc Photo Detectors Others (Optical Circuits, Micro-Optics, etc) Optical Equipment Optical Components Optical Equipment Optical Equipment Optical Components Product Items Sub Total for Optoelectronics Equipment Sub Total for Optoelectronics Components Total for Optoelectronics Products

366,084 3,574,474 1,241,530

114,196 209,636 20,396 30,540 982,343 356,553 22,178

2,132,461

1,051,275 832,287 218,988 172,923 17,332 1,811,761 305,000 15,700

361,433 3,632,146 1,291,274

114,829 171,087 20,230 34,772 907,826 271,181 23,133

2,134,493

1,113,542 902,515 211,027 149,219 28,513 1,820,093 298,000 16,400

362,205 3,543,839 1,358,012

99,822 128,705 20,207 33,913 858,932 246,767 26,317

1,975,186

1,183,873 962,413 221,460 158,769 15,370 1,657,986 298,000 19,200

200,483 401,821 469,129 383,221

8,012 77.896

96,384 47,061 234,050 5,726

206,379 507,285 368,120 298,851

71,737 6,159

8,139 61.130

74,978 44,506 173,700 5,667

210,641 540,900 326,211 257,351

7,916 60,944

77,229 46,217 127,750 6,155

54,658 6,472

53,665 7,279 256,342 245,931 10,411 115,832 39,922 5,142 31,510 39,258

242,335 231,714 10,621 142,094 46,293 5,598 30,133 60,070

250,119 240,165 9,954 117,369 38,856 5,075 31,245 42,193

FY2007 Production Actual FY2008 Production Estimate FY2009 Production Prospect Growth Rate % in million yen Growth Rate % in million yen Growth Rate % in million yen 4,424,866 2.3 4,244,400 4.1 4,149,862 2.2 3,645,598 3.1 3,720,009 2.0 3,607,994 3.0 8,070,464 2.6 7,964,409 1.3 7,757,856 2.6

-400

-300

-200

-100

100

200

300

Billion Yen

400

FY07 205.6 Billion Yen

FY08 (Estimate) -105.6 Billion Yen

FY09 (Prospect) -206.6 Billion Yen

Others Measuring/Sensing Photovoltaic Cells Laser Processing Optical Communication Optical Disk I/O Equipment Display

Figure 1 Contribution of each field to the increase in Domestic Optoelectronic Production

E  stimated production for FY 2008: 7,964.4 billion yen, growth rate: -1.30% Amidst the global nancial crisis, the industry declined overall for the rst time in three years. Photovoltaic cells saw rapid growth, and optical communication continued to be rm. Also, displays are expected to see growth due to a strong rst half. P  rojected production for FY 2009: 7,757.9 billion yen, growth rate: -2.6% Overall, a decline is projected for the second consecutive year. There are expectations for photovoltaic cells with the restoration of subsidies also boosting domestic demand, optical communication with favorable subscriber numbers, and demand expected in at-panel displays looking towards the end of analog broadcasts in 2011. 1.3 Changes in the Domestic Production of the Optoelectronic Industry Figure 2 shows the changes in the domestic production for the 19 years from FY1991 to FY 2009. Figure 3 shows the changes in domestic production in the 1980 s from the time of the rst survey to the present in two sectors, namely, optoelectronic equipment and optoelectronic components. Figure 2 also shows the nominal GDP and the domestic output of the electronics industry as a reference for
4

comparison between the changes in the size of the optoelectronic industry and those of the Japanese economy and electronics industry. For the last 19 years, the nominal GDP has stayed at around 500 trillion yen. The production of the electronics industry has also remained steady within the range of 20 trillion yen to 25 trillion yen. The output of the optoelectronic industry, on the other hand, was around 80 billion yen in FY1980, but has continued to post a steady positive growth rate ever since, exceeding the 7 trillion yen level 20 years later in FY 2000. Affected by the IT recession, the optoelectronics industry recorded negative growth in FY 2001 for the rst time since the survey started. It then regained positive growth quickly in FY 2002, and achieved strong growth again in FY 2003. FY 2005 was at as production shifted overseas and falling prices occurred quickly in some industry sectors. However, FY 2006 and FY 2007 saw solid growth, reaching the 8 trillion yen milestone. Both FY 2008 and FY 2009 are expected to see declines due to the global recession sparked by the nancial recession. Figure 3 also shows the proportion of optoelectronic components relative to the whole. In FY1980, optoelectronic components accounted for approximately 80% of the total output. Since then, single-mode fibers and semiconductor lasers have appeared in the market and

Optoelectronic Industry Trends

9 8

Domestic Optoelectronic Production (FY) Nominal GDP (FY)*1 (x 1/100) Domestic Electronic Production (CY)*2 (x1/10)
28.9 11.2

Growth Rate compared to the previous year

19.9 2.4 4.3 0.3 2.6 2.6 1.3 2.6

Domestic Production (Trillion Yen)

7 6 5 4 3 2 1 0 9.1 4.9 2.5

2.7 15.1 0.9 0.7 2.1 0.8 0.9 1.5 1.0 1.3 0.1

2.2 0.7 9.1

1.9

2.4 20.5

1.0

1.9 7.1

0.8

1.0

12.2 4.0 6.6 6.1

4.3

11.4 0.3

2.3 12.0 5.6

4.6

0.5 10.5

9.6 18.2 7.0 12.0 2.3 3.5 6.5 0.7 3.8 1.7

Figure 2 Changes in Domestic Optoelectronic and Electronic Production and Nominal GDP

Prospect

Estimate

91

92

93

94

95

96

97

98

99

00

01

02

03

04

05

06

07

08

09

5 Domestic Production (Trillion Yen)

Equipment Components Component Ratio

100 90 80 Component Ratio (%) 70

60 50

40 30

20 10

Fiscal Year

Figure 3 Changes in Domestic Optoelectronic Production of Equipment/Components (1980-2009)

(Estimate) (Prospect)

80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 00 01 02 03 04 05 06 07 08 09

100 90 80 70 60 50 40 30 20 10 0

1.8% 3.0% 5.0% 5.8% 6.7% 7.4%

1.5% 3.1% 6.4% 4.6% 7.2% 7.7%

1.5% 3.3% 7.0% 4.2% 7.6% 7.9%

Others Measuring/Sensing Photovoltaic Cells Laser Processing Optical Communication Optical Disk I/O Equipment Display

26.0%

23.9%

22.9%

44.3%

45.6%

45.7%

FY07 8,070 BillionYen

FY08 (Estimate) 7,964 BillionYen

FY09 (Prospect) 7,758 BillionYen

Figure 4 Changes in the proportion of Optoelectronic Products by field

4

Display I/O Equipment

Domestic Production (Trillion Yen)
3

Optical Disk Optical Communication Laser Processing Measuring/Sensing

Photovoltaic Cells

Figure 5 Changes in Domestic Optoelectronic Production by field (1991-2009)

*1 FY2008 Economic Outlook and Basic Stance for Economic and Fiscal Management, 1/19/09 (Cabinet Decision) *2 World-wide Production Prospect of Electronics and Information Technology Industries, JEITA, 12/19/08

Prospect

Estimate

91

92

93

94

95

96

97

98

99

00

01

02

03

04

05

06

07

08

09

Optoelectronic Industry Trends

expanded it. In addition, LCDs and other new optoelectronic products have been introduced to the market one after another. The optoelectronic industry has expanded and developed, with the major products changing drastically, reaching the present status. During the first half of the 1980 s, the production of optoelectronic components exceeded that of optoelectronic equipment; however, since the latter half of the 1980 s, the share of optoelectronic components has fluctuated between 30% and 40%. In the 2000 s, the proportion increased to 40-45%, with equal growth is being seen for optoelectronic components such as display devices and photovoltaic cells, and optoelectronic equipment such as digital cameras and display equipment. 1.4 Changes in Optoelectronic Products by Field 1.4.1 Changes in the Proportion of Optoelectronic Product by Field Figure 4 shows the changes in the proportion of products for the elds comprising the optoelectronic industry. The display eld and I/O eld account for approximately 70% of the whole, but due to the global recession, elds maintaining their size comprise growing proportions, with decreasing proportions for elds affected by the recession. The photovoltaic cells eld saw large growth in FY 2008, with sorting out of the raw materials supply structure and healthy demand in Europe. Optical storage, optical communication and sensing/measuring were rm, slightly increasing their proportions. The display eld is expected to resist decline in the lead up to the halt in analog broadcasts. The input/output eld is expected to see large declines in both growth and proportion, as digital cameras are unable to maintain their growth, and the primary ofce uses of printers and multifunction peripherals are also greatly affected by the recession. The laser processing eld was supported by the semiconductor and automotive and other manufacturing industries, and is expected to be drastically affected by the recession. 1.4.2 Changes in Optoelectronic Production by Field Figure 5 shows the changes in the optoelectronic production by eld for the 19 years from FY1991 to FY2009. Over the three years from FY 2007 actual results until the FY 2009 projection, the elds can be divided into four groups: photovoltaic cells saw large growth, the sensing/ measuring and optical communication elds were rm, display and optical storage were at, and the input/output and laser processing elds saw large declines. The photovoltaic cell eld saw its silicon materials shortage resolved in FY 2007, with large growth in FY 2008 due to European demand. FY 2009 is projected to see recovery in both domestic and global demand. The sensing/measuring eld temporarily declined in FY 2007, but is projected to be rm, as measuring equipment
7

is favorable due to FTTH uses, and sensing equipment demand is also expected related to energy conservation, safety and security. In the optical communication eld, due to the full scale penetration of FTTH, trunk line systems and metro systems are strong in the rst half, with strong subscriber numbers projected in the second half, and optical transmission modules are projected to be quickly shifted from low speed class (100 Mb/s to under 1 Gb/s) to high speed class (10 Gb/s to under 40 Gb/s). The display eld is projected to avoid a large decline. It has compensated for falling prices by larger sizes and higher screen quality such as full HD, and is expected to be supported by factors such as the end of analog broadcasts. In the optical storage eld, amidst CD and DVD production being shifted overseas and falling prices, in optical disk recording devices, large growth is projected for next generation DVD focused on Blu-ray Disc (BD). For the input/output eld, digital cameras maintained favorable growth and almost reached the 1 trillion yen milestone in FY 2007. Since FY 2008, compact types began to decline, but single lens reex types are not projected to fully compensate for this decline. The laser processing eld is easily affected by economic trends. There are concerns about when the automotive industry will recover, but earlier recovery is expected in the semiconductor industry, as part of it has already announced large investments. As described above, each eld is in a different situation. Reecting each market s demand, they are not simply affected by the overall recession, and are trying to incorporate new technologies to improve the situation. Detailed analysis of each eld is discussed below in Sections 2-8. In 2008, FTTH subscriber numbers leapt to a leading position among broadband platforms. The era has changed from Fiber to The Home, to Fiber to Every Home (FTEH). The optical communication committee is carrying out its activities focusing on analysis of market trends of the overall optical communication eld, and characteristic market trends found in product lines in this eld. 2.1 Optical Communication Equipment Optical communication equipment production was an actual 248.6 billion yen last scal year, an 8.7% decline year-on-year (YoY). This scal year s expected production (below, this FY ) is 271.5 billion yen, growing 9.2% YoY, and projected production next scal year (next FY) is 277.3 billion yen, for 2.1% growth YoY. Last FY s breakdown was: trunk line systems 41.6%, subscriber system 20.6%, metro systems 18.6%, optical ber ampliers 7.0%, video transmission 6.2%, optical LAN and optical wireless LAN 2.0%. Along with the growth seen in

2.

Trends in the Optical Communication Field

trunk line systems and metro systems, there was especially large growth in optical ber ampliers required in their Wavelength Division Multiplexed transmission systems. This growth resulted from uses in optical submarine repeatered transmission systems. 2.2 Optical Transmission Module Domestic production of optical transmission module was 53.9 billion yen last FY, growing a large 38.7% YoY. This FY declined 1.3% YoY to 53.2 billion yen, but next FY is projected to grow 23.6% YoY to 65.8 billion yen. Domestic production of optical transmission module under 100Mb/s is in a declining trend due to the move to higher speed communications. From 100 Mb/s to under 1 Gb/s declined 33.6% YoY to 12.2 billion yen this FY, with next FY projected to grow 6.7% YoY to 13.0 billion yen. From 1 Gb/s to under 10 Gb/s declined 5.4% YoY to 14.7 billion yen this FY, with next FY projected to grow 24.0% YoY to 18.2 billion yen. From 10 Gb/s to under 40 Gb/s grew 41.2% YoY to 21 billion yen this FY, with next FY projected to grow 33.9% YoY to 28.1 billion yen. 40 Gb/s and over grew 5.6% YoY to 3.7 billion yen this FY, with next FY projected to grow 30.0% YoY to 4.8 billion yen. 2.3 Laser Diodes for Communication Laser diodes were 38.88 billion yen overall last FY, growing 17.6% YoY. This FY was 40.28 billion yen, slowing to 3.6% YoY. Next FY is projected at 37.84 billion yen, down 6.1% YoY. 2.4 Photo Detectors for Communication Photo detectors for communication were 4.13 billion yen last FY, growing 24.3% YoY. This FY was 4.45 billion yen, growing 7% YoY. Next FY is projected at 4.81 billion yen, growing 8%. 2.5 Optical Fiber Optical ber cable declined 9.3% YoY to 110.8 billion yen last FY, slowing from the previous year. This FY grew 8.2% to 119.9 billion yen, with next FY projected to grow 0.6% to 120.7 billion yen. 2.6 Optical Connector Optical connectors overall grew 1.1% YoY to 26.8 billion yen last FY, and grew 12.3% YoY to 30.1 billion yen this FY. Next FY is projected to decline 5.0% YoY to 28.6 billion yen. It is believed that the volume of optical connector use increased along with an increase in the number of users due to penetration of broadband services access systems, especially FTTH. 2.7 Optical Fiber Fusion Splicers Optical ber fusion splicers overall were 17.09 billion yen last FY, growing a large 41.0% YoY. This FY declined 2.5% YoY to 16.66 billion yen. The rst half of this FY saw
8

a stable growth trend of 10% annually, but due to effects of subprime problems which began in the U.S. this summer and global nancial problems, differences in demand are arising between global regions. There are regions with declining demand where growth slowed due to investment fundraising problems, and regions with continuing rm demand. These offset, resulting in a at trend for overall global demand. 2.8 Optical Passive Components and Optical Circuit Components There was a 2.0% YoY decline overall to 34.2 billion yen, for optical passive components such as optical isolators, optical attenuators, optical multiplexers/ demultiplexers and optical couplers, and optical circuit components such as optical switches and optical modulators. This FY grew 2.0% YoY to 34.9 billion yen, with next FY at at 34 billion yen. The optical storage committee carried out its activities focusing on survey of domestic production of optical storage (mainly optical disk) equipment and media along with the analysis of the results, the examination of characteristic market topics and reporting thereof. The actual domestic output of optical disks in FY 2007 was 548.2 billion yen, registering a decrease of 6.4% from the previous year. The production estimate for FY 2008 is 564.8 billion yen (up by 3.0% over FY 2007) and the prospects for FY 2009 indicate a downward trend to 561.7 billion yen (down by 0.6% over FY 2007). Until now, products in the eld of information storage have optical disks as disruptive technologies replacing records, cassette tapes and VTRs, and hence in FY 2000, domestic production of optical disk equipment and media reached a peak of 1,174.8 billion yen. However, due to the collapse of IT bubble economy, reductions in product prices and the progressive shift to production overseas, domestic output declined for the rst time by 25% in FY 2001. The years 2002-2003 showed a return to positive growth with the introduction of DVD recorders and DVD recorders with HDD. However, product prices declined further and more production moved overseas in FY 2004 and FY 2005, which resulted in declines in domestic output in both FY 2004 and FY 2005. However, it recovered to grow 2.6% in FY 2006 (actual). As described above, the product markets in the information storage eld have experienced several cycles of market expansion as new systems are introduced followed by declines in domestic production caused by continually lower product prices and the transfer overseas of production. In FY 2007 to FY 2009, the target years of this survey, there are the negative factors of continually lower price levels and overseas transfer of production sites of BD read-only equipment, but these are more than compensated for by the

3.

Trends in the Optical Storage Field

Optoelectronic Industry Trends

positive impact of the full-scale penetration of next generation DVD recorders in Japan, resulting in the small amount of expected growth in FY 2008 as mentioned above. HD-DVD dramatically withdrew in 2008, but sales of BD recorders are expected to grow to over four times the level of last year with terrestrial digital broadcasts and penetration of large at panel high denition TVs. A progressive transition to popularly priced models is expected, but continued large growth is expected on a volume basis in FY 2009. In read-only equipment (CD, MD, DVD, BD & HD DVD), FY 2007 decreased only a little YoY due to BD & HD DVD players and game machines which can play BD. But FY 2008 is expected to see a remarkable decrease in production due to lower prices and production shifted overseas. There is also a large declining trend for CD and MD, with domestic production focused on automobile mounted DVD players including car navigation systems, but it is thought that with the sale of low price car navigation systems, this declining trend will continue. Read/Write equipment (CDs, MDs, DVDs and next-generation DVDs) grew for three consecutive years due to drastic increases in BD/HD DVD recorders (FY 2007: up by 210.3%, FY 2008: up by 424.5%), but with the recession, FY 2009 is projected to grow about 20%, which may even turn negative depending on the recession s trend. DVD recorders and DVD recorders with HDD showed positive growth in FY 2006, but are projected to see continual decline starting FY 2007 or FY 2008 due to price reductions and the progressive shift of production overseas. Domestic production of optical storage media is projected to record an increase of 6.2% in FY 2009 after a decrease of 9.4% in FY 2007 and a 0.2% decline in FY 2008. Large declines in demand for MD and MO, and continued decline in domestic production of CD-R and DVD recorders are projected, but domestic production is expected to grow for BD with its relatively high technology hurdles and high value added. A specic survey was also done on the superiority of optical disks in green IT for archive uses, as a trend which should be noted for this FY and the future. The survey of this eld focuses on the market trends, production trends and characteristics of the products, such as optical printers, MFPs (including digital copiers), barcode readers, digital cameras and digital video cameras. Reecting the recent shift to multifunction peripherals (MFPs), the survey of digital copiers has been analyzed combined with that of MFPs since the FY 2003 actual gures. The survey of single (non-hybrid) optical facsimiles was discontinued after the FY 2005 report, taking into account the fact that the domestic production had been reduced to an insignicant level. On the other hand, almost all MFP products used optical technology for both input and output, but considering the growth of MFPs adopting inkjet for output in recent years, this year (FY 2008 survey), our surveys started covering inkjet output type MFPs using
9

optical technology in the document reader component, termed inkjet MFP. Also, since FY 2005 actual gures, digital cameras and digital video cameras were respectively classied into two types for more detailed analysis of market and product trends: digital cameras were classied into single-lens reex cameras and compact cameras, and digital video cameras are classied into hi-vision cameras and NTSC cameras. 4.1 Trends of Domestic Production The actual production of I/O equipment as a whole in FY 2007 was 1,735.8 billion yen, registering a 4.1% increase from FY 2006. This increase is the result of an increase by 5.6% in the production of input equipment, such as digital cameras and digital video cameras, amounting to 1,422 billion yen, and a decrease by 2.4% in the production of output equipment such as optical printers and optical MFPs, amounting to 313.8 billion yen. Domestic production in FY 2008 and onwards of all types of optical I/O equipment has been affected by the global nancial crisis and is predicted to decline. 4.2 Trend Analysis (1) Optical printers Domestic production of optical printers in FY 2007 declined to 114.2 billion yen, down by 6.9% YoY, but FY 2008 was 114.8, almost the same as the previous year, so the decline of domestic production appears to have bottomed out. However, compared to the previous FY survey, FY 2008 estimated production and the FY 2009 projection are both revised downwards by around 10%. The overall market for optical printers achieved high growth on a unit basis in recent years. However, it has been affected by recession due to the nancial crisis, and 2008 global shipment volume decreased YoY, with slowed growth in China and Asia. Color products have expanded their market, especially in developed countries, but a converging trend is seen for the share of color products in optical printers overall. On the other hand, small A4 size MFPs are steadily expanding their market. (2) Optical MFP (including digital copiers) The domestic production of optical MFPs in FY 2007 was 199.6 billion yen, a slight increase of 0.4% from the previous year. This may be due to the fact that while the volume of shipments in FY 2007 increased over the previous year for monochrome MFP (by 1.4%) and also signicantly increased for color MFP (by 35.9%), overseas production expanded for both monochrome and color MFP. FY 2008 estimated and FY 2009 projected see declines of over 20% YoY. It is thought that this is because domestic production at many companies is greatly affected by further expansion in overseas production, and also by the rapid onset of full scale recession starting in the U.S. since fall 2008. (3) Inkjet MFP

4.

Input/Output (I/O) Field

As described above, inkjet output type MFPs using optical technology in the document reader component are termed inkjet MFP. This was added to the survey, with its survey and analysis starting this FY. FY 2007 domestic production of inkjet MFP was 10 billion yen, only about 1/20 of optical MFP, but it is expected that FY 2008 saw large growth at 27.8% to 12.8 billion yen, about 1/12 of optical MFP. A survey also shows that global inkjet MFP shipment value is US$8.5 billion, indicating that a very large share of production is overseas. (4) Digital cameras and digital video cameras Since FY 2005 actual, the survey divides digital cameras into compact type and single lens reex type. In last FY s survey, FY 2007 was expected to be the rst year to reach the one trillion yen milestone, but FY 2007 actual grew 9.2% to 982.3 billion yen, not quite reaching one trillion yen. Also, the FY 2008 estimate for digital cameras saw the rst decline (7.6%) since the surveys began, and FY 2009 also projects a 5.4% decline to 858.9 billion yen. The future trend will be watched to see if this is a temporary phenomena due to effects of the economic situation, or if it has nally passed its peak and is heading downwards. Breaking this down, until last FY, it was driven by demand for single lens reex type, but that also lost strength in FY 2008, as the decline in compact types dragged overall production value of digital cameras into a decline. Domestic production of digital video cameras in FY 2007 declined 5.9% to 356.6 billion yen. The estimate for FY 2008 is a large 23.9% decrease to 271.2 billion yen and the prospect for FY 2009 is also a 9.0% decrease. Since FY 2006 actual, domestic production has been surveyed in two categories: traditional models (equivalent to NTSC) and high-denition models (equivalent to Hi-V). Looking at this breakdown, production of Hi-V cameras is increasing remarkably and is projected to exceed that of NTSC cameras in FY 2009. (5) Image scanners FY 2007 domestic production declined 2.5% to 30.5 billion yen. FY 2008 is expected to grow 13.9% to 34.8 billion yen. It does not appear that domestic production will grow, but inkjet MFP incorporate atbed scanners, and units which do not appear in these statistics are being shipped. However, there are many low price products, so it is assumed that they are being produced overseas. 4.3 Trends of Overseas Production In this eld production has been largely shifted abroad; thus, the domestic production does not accurately reect the entire output of domestic manufactures. To solve this, four categories, domestic production, overseas production, domestic shipment and overseas shipment have been investigated since FY 2000. This categorization may have imposed a greater burden on the respondents, but the information obtained is of great value. In FY1999, overseas production of I/O equipment
10

accounted for only about 19%. This increased to 31% in FY 2001 and then to 45% in FY 2003. After a temporary decline to 41% in FY 2005, it is expected to rise to 54% in FY 2007, and 57% in FY 2008. Around 38% of MFP production was overseas in FY1999. It sharply rose to 72% in FY 2002. It then experienced a temporary decline to 67% in FY 2004, but it is expected to rise further to 76% in FY 2007 and 81% in FY 2008. Although the production of digital cameras dropped from 36% in FY 2003 to 27% in FY 2004, it rose to 51% in FY 2007 and is also expected to be a similar amount in FY 2008. 31% of digital video camera production was overseas in FY 2007, and 47% of optical printers. 5.1 Results of Analysis of Optoelectronic Industry Trends As a result of analysis and investigation based on a questionnaire survey sent to related companies, this eld s production is as follows. Domestic production of display equipment recorded 1,241.5 billion yen (up by 8.6% YoY) in FY 2007. The estimation for FY 2008 is 1,291.3 billion yen (up by 4.0%) and the prospect for FY 2009 is 1,358.0 billion yen (up by 5.2%). The production of display components was 2,132.5 billion yen (down by 0.3%) in FY 2007, the estimation for FY 2008 is 2,134.5 billion yen (up by 0.1%) and the prospect for FY 2009 is 1,975.2 billion yen (down by 7.5%). Within display equipment, at panel displays are exhibiting especially remarkable growth, with FY 2008 domestic production expected to be 1,113.5 billion yen, achieving a 5.9% annual growth rate. Considering the rapidly falling prices for LCD and PDP, we presume the growth in units produced is even greater. (1) LCD equipment and components The steadily growing domestic production of LCD equipment and components changed dramatically due to the economic recession which suddenly arose in the second half of 2008. One after another, major foreign and domestic manufacturers of LCD panels reduced production as had been previously unseen, and are moving to shrink and restructure production lines, with review and postponement of new investment plans. Also, stagnant demand for equipment has led to falling prices in the market and worse earnings for manufacturers of display equipment and panels, and has also affected related parts and material manufacturers, greatly slowing the entire LCD industry. 1) Equipment: Domestic production of LC TVs has grown from 733.1 billion yen in FY 2007, to 807.1 billion yen (up 10.1% YoY) estimated in FY 2008, and 887.9 billion yen (up 10.0%) projected for FY 2009. Domestic production of LCD monitors was 99.1 billion yen in FY 2007, decreasing 3.8% to 95.4 billion yen in FY 2008, projected to decrease a further 21.9% to 74.5 billion yen in FY 2009. These several years, production has become mainly by overseas manufacturers, with decreasing domestic production. 2) Components: Domestic production of active-matrix LCA

5.

Display Field

Optoelectronic Industry Trends

panels in FY 2007 was 1,698.9 billion yen (up 1.4%), with FY 2008 estimated at 1,720.2 billion yen (up 1.3%), and FY 2009 projected at 1,562.4 billion yen (down 9.2%). Domestic production of passive type LCA panels in FY 2007 was 112.9 billion yen (down 10.1%), with FY 2008 estimated at 99.9 billion yen (down 11.5%), and FY 2009 projected at 95.6 billion yen (down 4.3%). Production has progressively shifted overseas, with domestic production in a declining trend these several years, and it is thought this trend will continue. (2) PDP equipment and components The PDP TV market was rm in the rst half of FY 2008 with the special demand for the Beijing Olympics, possibly with wider recognition that PDP has high picture quality. However, since the second half of FY 2008, it has been affected by the sudden economic recession. 1) Display: The production of 219.0 billion yen (up by 15.3%) recorded in FY 2007 is expected to rise to 211.0 billion yen (down by 3.6%) in FY 2008 and projected to move up to 221.5 billion yen (up by 4.9%) in FY 2009. 2) Components: The production of 305.0 billion yen (down by 4.7%) recorded in FY 2007 is expected to decrease to 298.0 billion yen (down by 2.3%) in FY 2008 but projected to be at at 298.0 billion yen in FY 2009. (3) Organic EL display components In FY 2008, active-matrix organic EL display components (AMOLED) also came to be adopted in photo frames, One Seg.-TVs and portable game devices. On the other hand, growth slowed for passive matrix (PMOLED). There is the sudden economic recession, but there are also mass production plans at multiple manufacturers, so continued growth in domestic production is projected. Domestic production of organic EL display components in FY 2007 was 15.6 billion yen (up 1.4%), with FY 2008 estimated at 16.3 billion yen (up 4.5%), and FY 2009 projected at 18.9 billion yen (up 16.0%). (4) Projection display equipment FY 2007 domestic production was about 172.9 billion yen (down 0.9%), but FY 2008 is estimated to decline 13.7% to 149.2 billion yen, due to rapidly falling prices, production shift to overseas, and the suddenly worsening global economic situation. FY 2009 is projected to grow 6.4% to 158.8 due to promotion of penetration in educational uses and new developments. (5) Large display equipment FY 2007 domestic production was about 17.3 billion yen (up 4.9%), and FY 2008 recorded its highest ever 28.5 billion yen (estimated up 65%), due to special demand for the Beijing Olympics. In contrast, FY 2009 is projected to be 15.4 billion yen (down 46%). This is due to a slump after the special demand, and large impact from the global recession. 5.2 Trends to Note This Fiscal Year This scal year, we surveyed the digital cinema trend. As of beginning of February 2009, there were 7,336 digital
11

cinema screens in 2,125 theaters globally. It is said there are about 120,000 screens in the world, and this is less than 6% of all screens, but in the U.S., more than 10% of all screens have converted to digital: 4,887 screens at 841 theaters. On the other hand, Japan has 100 screens in 65 theaters. Almost all Hollywood movies can be delivered digitally, and with lower priced equipment and introduction of a virtual print fee (VPF) model to help initial installation costs for the theater, they will penetrate rapidly, with half of all screens globally converting to digital by 2013, for a potential market projected to be $8 billion. Photovoltaic cells are expected to provide vast amount of non-polluting energy, and are positioned as one of the most important future energy sources in Japan s energy strategy. In addition, various climate changes which are omens of global warming are frequently reported, and at the G8 Toyako Summit held in July 2008, an international agreement was formed to cut global CO2 emissions 50% by 2050. Ahead of the summit, then Prime Minister Fukuda who served as the G8 Summit Chairman announced the Fukuda Vision immediately before the summit, establishing Cool Earth 50 (energy innovation technology plan) for Japan to cut CO2 emissions by 60-80%. The New Energy and Industrial Technology Development Organization (NEDO) compiled the PV Roadmap toward 2030 (PV2030) in 2004, which identies the forthcoming period through 2030 as the formation stage for public awareness and condence to develop PV power generation to serve as one of the major energy resources in response to energy resources/global environment issues. To that end, efforts for technological development are being made to achieve conversion efciency levels of 25% and to realize costs similar to that for general use (7 yen/kWh). In this situation, an initiative is being launched for specic technology development of photovoltaic cells, seeking a large contribution to cutting global warming gas CO2 emissions in half. Also, to cut in half the costs of housing PV system costs which was in the Fukuda Vision, housing PV systems recovered with this scal year s rst extra budget. This is expected to be a large stimulus for the stagnant domestic market. 6.1 Market Analysis The total shipment of PV cells from Japan in FY 2007 was 911.6 MW, up by 40 MW or 4.6% year-on-year (YoY). The decline in FY 2006 was not repeated, and it rebounded above the previous record shipments in FY 2005. The main cause for this is that overseas export markets grew strongly, although the domestic housing PV power system market continued to shrink. The PV system penetration support project by the government has spread from the Ministry of Economy, Trade and Industry to the Ministry of the

6.

Photovoltaic Energy Field

Environment and other government agencies and local governments, but same as in FY 2006, there is a weak effect on domestic market stimulation. On the other hand, PV cell manufacturers in Japan keep investing in facilities to increase production capacity, and new manufacturing entrants are starting production, along with progress in new expansion plans. Shipments for FY 2008 are expected to increase 26% for both shipment volume and value. There was a large 37.5% YoY increase by the third quarter. Table 2 shows the shipment volume and the composition by materials in FY 2007. Crystal Si type is becoming the main material for power generation uses. Polycrystalline-Si type grew 2.6% YoY to 516.0 MW, maintaining its 500 MW level. Single-crystal Si type annual production did not go beyond the 300 MW level, for a second consecutive year of decline. On the other hand, amorphous-Si type saw repeated slight increases and decreases until the year 2000, but fulledged adoption also started in the sector for power generation uses, and the improvement of production capacity is underway, with a goal of expanding its scale to 100MW. FY2007 shipment volume was 85.6 MW, growing 69.6% YoY, regaining its former growth. Amorphous-Si type has begun competing with crystal Si type in the power generation market. Judging from the current production capacity and future expansion plans, the Crystal Si type holds an absolute advantage for its supply system. Still, with strong demand from U.S. and European mega solar power generation systems, drastic reinforcement of the production capacity for the amorphous-Si type is continuing. FY 2007 shipments in terms of volume and ratio by destination are shown in Table 3. Domestic shipments declined 21.7% YoY to 209.9 MW, while shipments overseas rose 16.3% YoY to 701.7 MW, achieving 700 MW for the rst time. Domestic shipments shrunk from 30.8% of overall shipments, down to 23.0%, while shipments overseas rose from 69.2% to 77.0%. The drive for Japan s photovoltaic cell supply system is shifting from mainly domestic to an
Table 2 Shipment by Material Type and Their Percentages
Si Monocrystal Shipment (MW/year) Percentage 310.0 34.0% Si Polycrystal 516.0 56.6% a-Si and others 85.6 9.4% Total 911.6 100%

overseas focus. Exports to the U.S. and Europe began in 2001, and are increasingly full scale each year, in an environment of very quick demand growth in European markets, mainly Germany and Spain, with dramatic changes since 2003. Shipments overseas to the U.S. were 132.5 MW, Europe was 498.2 MW, and others were 71.0 MW. Europe almost reached 500 MW. The PV cell business in Japan shows a shift to global-scale business expansion targeting global markets, instead of being conned to the Japanese market, due to the introduction of PV generation systems on a world-wide scale. 6.2 Overseas Trends The major topics in 2007 include: (1) The annual installed photovoltaic power of the 20 IEA member countries increased from 1,423 MW to 2,257 MW, exceeding 2 GW for the rst time; (2) Germany increased the annual installed photovoltaic power from 830 MW to 1,135 MW, leading the expansion trend of installed photovoltaic power of the world; (3) In terms of accumulated installed power, Germany achieved 3,862MW, holding the top rank in the world for three consecutive years; (4) Spain installed 512 MW that year, and was ranked second in the world, next to Germany; (5) Japan s annual installed power volume was third in the world at 210.4 MW, passed by Spain. Japan s cumulative installed power reached 1,919 MW, but only Japan is declining, falling far behind in installation growth. (6) Annual installed power in the US increased from 145 MW to 207 MW, coming close to Japan s. (7) In terms of annual growth rate, Italy (461%), Spain (422%), France (187%), Switzerland (150%), Korea (102%) and the U.S. (42%) have shown the largest increases. The speed of installation and expansion of photovoltaic power generation systems is accelerating in Europe and Korea where a feed-in tariff system is adopted. With the addition of the U.S, it is expected that the installation and expansion trend will gain momentum from 2008 onwards. The items surveyed by the research committee in this eld are mostly medical laser equipment, material-processing laser equipment and laser oscillators. Medical laser equipment uses various gas lasers and solid-state lasers, and the survey is made by classifying them by medical eld, such as ophthalmology, surgery and dental treatment, pain relief and other (cosmetic, etc.). The usage of materialprocessing laser equipment covers an increasingly wide range from heavy industry, such as rebar, bridge and shipbuilding, to light industry, such as electronics, IC wafer, engineering plastics, etc., and the lasers used in these industries are overlapping and complex. Thus, in order to make it easier to grasp the industrial trends, analysis is made
12

7.

Market Trends of Laser Processing Field

Table 3 Shipment by Destination and Their Percentages

for Domestic Shipment (MW/year) Percentage 209.9 23% for Export 701.7 77%

Optoelectronic Industry Trends

by type of laser, such as carbon dioxide gas laser, solid-state laser, excimer laser, etc. Total laser equipment production continued growing until FY 2007, marking 391.2 billion yen, almost reaching the 400 billion yen level, but FY 2008 was affected in the second half by the deep recession, and is estimated to decline 21.5% YoY to 306.9 billion yen. FY 2009 is projected to decline a further 13.5% to 265.2 billion yen. In shares by sector, excimer laser equipment for material processing comprise about 57% of the total, and below that the shares continue to be 24% for carbon dioxide gas lasers, and solid-state lasers 14%. Shares by sector have not changed, but this laser equipment for materials processing is important production processing equipment used in many processing sectors, and the reality is that effects of the economic slowdown mentioned above are appearing remarkably in almost all sectors. 7.1 Medical Laser Equipment The medical laser equipment sector is being pressed by overseas products, and its severe condition continues unchanged. Estimated production for FY 2008 is slightly up by 1.6% YoY, but FY 2009 is being dragged down by the economic slowdown, projected to decline 2.7% YoY to approximately 7.9 billion yen. Viewed by sector, FY 2008 laser equipment for surgery and ophthalmology are estimated to have grown slightly by over 3%, lasers for dental treatment grew slightly by 1.8%, and lasers for pain relief were at the same level YoY. Lasers for dental treatment which comprise a large share are also projected to decline 2.6% in FY 2009; Lasers for cosmetic use are easily inuenced by the economy, and are projected to see a large 36.2% decline. Despite the economic recession, lasers are expected to see broader use in medical treatments. 7.2 Laser Materials Processing Equipment Production of carbon dioxide gas laser equipment was initially expected to pass 100 billion yen in FY 2007, but fell far short, at about 96.3 billion yen. Furthermore, FY 2008 is estimated to see a large 22.2% YoY decline to 74.9 billion yen. Carbon dioxide gas laser equipment is struggling to boost exports due to the strong yen, and is battling harsh conditions due to the economic slowdown mentioned above, but is projected to grow by about 3.0% to 77.2 billion yen in FY 2009. As a trend of carbon dioxide gas laser equipment, the cutting processing machine sector is benetting from growth in emerging markets, and there is active development of various functions, even assuming untrained workers. For example, for higher speed processing machines, more than increasing processing speed itself which is determined by physical phenomena, each company is putting effort into technology development in order to shorten total processing time including automated functions such as for setup work. Also, use of thermal stress for cutting FPD glass is attracting attention as a new use.
13

Production of solid-state laser equipment in FY 2007 declined 0.2% YoY to 47 billion yen, but FY 2008 is estimated to decline 5.4% to 44.5 billion yen. Amidst slowing capital investment by IT industries and semiconductor related companies, this is projected to rise slightly due to low cost and ecology related capital investments such as for photovoltaic cells and battery vehicles which may become globally competitive in the future, with FY 2009 growing 3.8% to 46.2 billion yen. As a trend of solid-state laser equipment, full scale increased production of hybrid and battery vehicles is an important pillar for environmental friendly and global warming prevention measures. In the welding sector, amidst full scale increased production of rechargeable batteries for vehicles, welding of cases and electrodes for Lithium-ion batteries often uses a welding process by ber transmittable solid-state lasers, which is expected to see large growth. In the trimming and repair sector, photovoltaic cells are attracting attention. Laser patterning processing equipment performs the main process for thin lm photovoltaic cells. Harmonic solid-state lasers with Q-SW pulse oscillation are essential, and are expected to see large growth. Production of excimer laser equipment grew to 234 billion yen in FY 2007, but FY 2008 is estimated to decline 25.8% YoY to 173.7 billion yen. FY 2009 is projected to decline further by 26.5% to 127.7 billion yen. However, in the annealing sector, while crystal annealing equipment has seen large decreases, there are also positive stories, with Korean panel manufacturers projected to restart investing in FY 2009, and in lithography uses, the world s largest CPU manufacturer decided in FY 2009 to introduce leading edge semiconductor manufacturing facilities for 32nm resolution, and announced large investments, etc. As a trend of excimer lasers, there is progress in development of patterning technology by non-thermal processing excimer lasers, which are effective in fabrication of thin lm silicon photovoltaic cells. If processing technologies utilizing the characteristics of excimer laser equipment become established, it may lead to large future growth. 7.3 Oscillators A trend of carbon dioxide gas laser oscillators is their application in drivers for extreme ultra-violet (EUV) light sources used in next generation semiconductor lithography equipment. EUV light source drivers link carbon dioxide gas lasers in a series, and amplify pulse laser light to the 10 kW level. By illuminating tin droplets in amplied pulse laser light, one can generate 13.5 nm wavelength ultra-short ultraviolet rays. Development of conventional EUV light source drivers was progressing focused on solid-state lasers, but in the case of solid-state lasers, many pump modules are required, and application of carbon dioxide lasers has been attained as a solution for cost and quality issues. As a trend of solid-state laser oscillators, there is progress in higher power for secondary harmonics and tertiary

harmonics, and YAG lasers have entered the UV laser light market previously monopolized by excimer lasers. There is also progress in applications of picosecond lasers and femtosecond lasers in ne processing, drilling and cutting, and also, unique femtosecond processing businesses such as protein crystallization and frictionless cylinders have started to become established, and if there is progress in higher laser output and lower cost, it is expected that new processing markets will form. As a trend of excimer laser oscillators, in the lithography sector, there is progress in ArF immersion lithography such as enhanced ne pattern resolution performance and higher power, working for further productivity enhancements (higher throughput and higher uptime). Through such improvement efforts, the characteristic of excimer laser as a light source which can cheaply supply UV light is being looked at anew, and development of new applications has begun in various sectors. As a trend in other oscillators, there is continuing progress with ber lasers. There is more active development of ber lasers, especially in laser manufacturers, ber manufacturers, universities and research institutes, both overseas and in Japan. At academic conferences, seminars, etc, there are growing numbers of announcements using ber lasers in development of femtosecond and picosecond lasers and laser processing by high quality beams. There are hopes that in the future, shorter wavelengths of pulse ber lasers for precision processing will become scopes, resolving long term reliability issues for high peak power such as light resistance and photo darkening. The subjects surveyed in this eld are optical measuring equipment and optical sensing equipment. Optical measuring equipment includes equipment to measure the basic properties of light, such as light energy, frequency, waveform and propagation characteristics, and products related to light sources for measurement. Optical sensing instruments include all sensors and sensing equipment that make use of some properties of light, such as intensity, phase, wavelength and frequency. These subjects cover a wide range and are sensitive to technological advancement. To ensure consistency over successive surveys products are classied according to usage, operating principle, production technology, etc., and as a result, committee members with specialized knowledge in various elds spent a lot of time and effort on long discussions, etc. to decide survey items and to select companies. Optical measuring equipment, such as spectrum analyzers, Optical Time Domain Reectometers (OTDRs), power meters, waveform measuring equipment and optical ber transmission characteristics measuring equipment, is mainly used for installation and maintenance of optical communications systems. Consequently, the production of such equipment is closely related to the expansion of optical
14

8.

Sensing/Measuring Field

communication networks. Until the rst half of 2000, aiming for leadership in the communications industry, optical ber communication networks had been steadily expanding. With expanded production capacity for optical communications equipment and optical components, domestic optical measurement instruments-related companies made large scale investments beneting from the demand expansion. At the same time, demand for the instruments for research and development and production lines grew rapidly. However, since the second half of 2000, these experienced an abrupt slowdown due to the collapse of the IT bubble, which had a grave impact on both domestic and global production. The situation has shown a gradual recovery since 2003, and it grew 19.9% in this scal year s survey, far above the previous scal year s projection. A factor contributing to an increase in demand for optical measuring instruments is the penetration of FTTH services throughout the world. The transition of optical communication networks to the next-generation systems is also a positive contributor to good performance. Along with this movement, the demand for the measuring equipment to support the development of systems and devices that control ultra-high speed optical networks is projected to increase. It is thought that there will be a temporary slowdown due to effects of the recession, but relatively stable demand is expected. Optical sensing equipment indicates all sensors and equipment which use the various properties of light in some form. Although the scale of production of individual products is certainly not large, there are various types of optical sensing instruments which meet a wide range of needs of R&D and production units, consumer uses, etc. Consequently, production facility investment strongly inuences the demand for photoelectric switches, human body sensors, temperature sensors, radiation thermometers, rotary encoders, linear scales, length sensors, sensors for electric current/ voltage/ magnetic eld/ electric eld, sensors for vibration/ pressure/ acoustics, infrared cameras, laser microscopes, surface inspection equipment, image sensing equipment, speed sensors, color sensors, etc. Growth is estimated for this scal year, but due to recessionary sentiment resulting from U.S. subprime loan bankruptcies in the second half of FY 2007, facilities investment has been held back, resulting in an 11.8% decline. Among sensing equipment, there was a large decline in industrial applications such as photoelectric switches, temperature sensors, radiation thermometers, length sensors, sensors for electric current/ voltage/ magnetic eld/ electric eld, vibration/ pressure/ acoustic sensors, and surface inspection equipment. However, building and residential sensors such as re/smoke sensors and human body sensors are maintaining their growth trends as devices close to consumers. Continued growth is expected for crime prevention and safety related equipment, such as infrared cameras, and their applications. Measuring and sensing instruments account for approximately 3.0% of the domestic optoelectronic industry,

Optoelectronic Industry Trends

amounting to 242,225 million yen. However, these instruments are the basis for all types of industrial equipment and also essential for development of new industrial equipment and infrastructure development. Once an investment is made, it is not likely to require renewal for quite some time because they are general purpose. Safety laser scanners are attracting attention as a future trend. The survey classied these as laser radars. These are optical application products written into machine safety standards, along with light curtains, etc. Among sensing equipment, sensors in particular are like parts. Their production locations are steadily shifting overseas, thus the response rate is declining, resulting in lower survey accuracy. This scal year, the following investigation and review was done in an attempt to improve accuracy. The survey form wrote more concrete denitions, scope and caution notes, and was revised to clarify differences between items. For product items with particularly low accuracy, surveyed companies were reviewed. Specically, we removed data of companies which are not thought to be producing that product, while companies thought to be producing them were added to the survey. Production volume data of companies which did not respond was estimated from the data which replied to each item, but the data of companies with small estimated production and without response over the past several years had their data removed, as companies not producing that product. A production estimate was not made for equipment categorized as Other. We will continue to investigate improvement for survey accuracy. 9.1 Introduction Along with the survey on the domestic production, the number of full-time employees and the number of researchers engaged in R&D and the amount of investment in R&D are surveyed. As in the previous scal year, a quantitative questionnaire survey to obtain the gures for estimates for FY 2008 was conducted. Also, a quantitative questionnaire survey was performed to determine whether there was an increase, decrease, or stayed the same compared to the previous year for the estimates for FY 2008 and prospects for FY 2009. The following is the results from 62 companies that have responded to all the questionnaire items. 9.2 Industrial Resources of FY 2008 (Estimate) With regard to human resources, the median number of full-time employees at the 62 companies was from 150 to 199, with 50 to 59 researchers. Comparing among the same cumulative number of companies, it is thought that about 1/5 to 1/3 of full-time employees are R&D workers. Looking at funding, the median amount invested by 62 responding companies in research and development was 100 to under 500 million yen, with domestic production of 5 to under 10 billion yen. Comparing among the same cumulative
15

number of companies, it is thought that about 1/30 to 1/10 of domestic production value is invested in R&D. 9.3 Increase/Decrease from the Previous Year (Estimate for FY 2008, Prospect for FY 2009) (1) Number of full-time employees 11 of the companies responded that the number of fulltime employees increased in FY 2008 compared to the previous scal year (2007), 37 responded the same, and 14 reported a decrease. 16 companies intend to increase personnel in FY 2009 from this year (2008), 34 maintaining the same level, and 12 companies intend to decrease. The tendency of change of the top three responses is (FY 2008 FY 2009): 1) Same Same (26 companies) 2) Increase Increase (7 companies) 3) Same Increase (6 companies), Decrease Decrease (also 6 companies). (2) Number of researchers 10 of the companies responded that the number of researchers increased in FY 2008 compared to the previous scal year (2007), 42 responded the same, and 9 reported a decrease. 14 companies intend to increase researchers in FY 2009 from this year (2008), 39 maintaining the same level, and 9 companies intend to decrease. The tendency of change of the top three responses is (FY 2008 FY 2009): 1) Same Same (35 companies) 2) Same Increase (7 companies) 3) Increase Increase (6 companies) (3) Amount of R&D investment 11 of the companies responded that they increase investment in FY 2008 compared to the previous scal year (2007), 42 responded the same, and 9 reported a decrease. 22 companies intend to increase R&D investment in FY 2009 from this year (2008), 27 maintaining the same level, and 13 companies intend to decrease. The tendency of change of the top three responses is (FY 2008 FY 2009): 1) Same Same (22 companies) 2) Same Increase (13 companies) 3) Increase Increase (8 companies) (4) Domestic production 19 of the companies responded that domestic production increased in FY 2008 compared to the previous scal year (2007), 20 responded the same, and 23 reported a decrease. 21 companies expect production to increase in FY 2009 from this year (2008), 13 maintaining the same level, and 28 companies expect it to decrease. The tendency of change of the top three responses is (FY 2008 FY 2009): 1) Decrease Decrease (13 companies) 2) Increase Increase (11 companies) 3) Same Same (8 companies), Same Decrease (also 8 companies)

9.

Trends of Resources for Optoelectronics Industry

10.1 Introduction The International Optoelectronics Association is comprised of 11 organizations in the world. It held its 13th annual meeting in October 2008 in Melbourne. Each organization is strengthening initiatives, for the photovoltaic sector which has begun to see large demand for environmental reasons, and wanting to understand trends from today looking forward 10 years in the future for solid-state lighting which has illumination efciency similar to uorescent lighting. Focusing on these two sectors, the international trends in the optoelectronics industry are described based on the documents presented by individual organizations. There were already nancial insecurities when the meeting was held, but one should consider that the spread of the global recession is not reected in the data of each organization. Also, the denition of categories in optoelectronics industry varies for each organization, and a comparison in a strict sense with OITDA data is not possible. 10.2 Overall Optical Industry Trends 10.2.1 Global Optical Industry (from OIDA and PIDA) OIDA (USA) does not do a trends survey in its country, but it gathers various reports and announces global optoelectronics industry trends including a projection out to 10 years. Its projection for the global optoelectronics industry in 2018 is $630 billion of optoelectronic equipment, and $610 billion of optoelectronic parts. Each year, PIDA (Taiwan) also makes ve year trends projection concerning the global optoelectronics industry, including results. Its projection for the global optoelectronics industry market size in 2010 is $520 billion. The values for the entire optoelectronic industry projected by OIDA and PIDA almost match the Optoelectronic Industry Future Vision (November 2004) published by OITDA. 10.3 Solid-State Lighting (High Brightness LED) Trends 10.3.1 Global Solid-State Lighting (High Brightness LED) Market Trends (from OIDA, EPIC, PIDA) OIDA projects that solid-state lighting will comprise 30% of the illumination market in 2016, and within solid-state lighting, OLED will grow to 10% by 2018. It also projects that the high brightness LED market will exceed $20 billion in 2018. On the other hand, from a perspective which differs from OIDA, EPIC (EU) sounds a warning that CFL (compact

10. International Trends Observed at the Meeting of IOA

uorescent lights) will replace incandescents by 2012, and if LEDs cannot enter into residential use by then, they will be unable to enter. In turn, EPIC and PIDA state that emphasis should be placed on external lighting, and project a market size in 2012 of 3.8 billion euro (EPIC) or $4.6 billion (PIDA). 10.3.2 Koreas LED Market Trends (from KAPID) KAPID projected that LED sales volume/ number of companies will grow from $8.1 billion/205 companies in 2005, to $21.9 billion/ 374 companies in 2009. Also, KAPID s home base of Gwangju means light state in Chinese characters, and Gwangju has introduced a large project in its aim to be the Light City. $300 million will be invested over ve years, focused on LED development centers. 10.3.3 Chinas Solid-State Lighting Market Trends (from HKOEA) As development and production bases for solid-state lighting, ve regions are attracting attention: Nanchang, Xiamen, Shenzhen, Shanghai and Dalian. 10.4 Photovoltaic Trends 10.4.1 Global Photovoltaic Market Trends (from OIDA and PIDA) OIDA projects that photovoltaic modules and systems will pass $100 billion in 2013. PIDA projects the same in 2010. 10.4.2Taiwans Photovoltaic Trends (from PIDA) FPD is the driving force for optoelectronic production in Taiwan, comprising over 60%. This is a characteristic of Taiwan s optoelectronic industry, but looking at YoY growth rates in 2007, photovoltaic cell related were ranked the top 4, and are expected to grow by 600% from 2006 to 2010. 10.4.3 Australias Photovoltaic Trends (from OIA) Victoria State (around Melbourne) receives more annual sunlight than Barcelona, Spain. Presently, only small scale power generation systems are operating, but there is a plan for a solar power system which will be 150 MW when fully operational.

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Optoelectronic Technology Trends

The OITDA forms an Optoelectronic Technology Trend Research Committee every scal year as part of the optoelectronic technology trends survey project, in order to gain a comprehensive understanding of major trends in optoelectronics-related technology domestically and abroad, and to regularly take new movements up as topics to investigate and analyze. This scal year, working groups were organized to address and investigate the eight elds described below (the study on medical technology in the optical industry will be conducted for a limited period). The results will be presented at the optoelectronic technology trends seminar at the InterOpto 09 exhibition scheduled to be held in September 2009. The latest technology trends in some 17 elds were presented in Technology Trends on the OITDA web news site, OptoNews. With regard to the overseas eld survey of trends in optoelectronic technology, a survey team was dispatched to U.S.A., and the survey was carried out through the participation in Photonics West 2009 and the visit to venture companies dealing in compact displays. In addition, the project was subsidized by JKA through its Promotion funds from KEIRIN RACE. Every year, Working Group 1 surveys a technical trend in the basic technology for modules and devices at optical wavelengths from 100 m to near 200 nm. The wavelength range consists mainly of the terahertz band, the near-infrared range for optical communications and the visible and ultraviolet range. Until last year, chief trends included the expansion of wavelength ranges, and higher output power, faster processing and lower cost at a xed wavelength for practical use. This scal year, in addition to the characteristic improvements mentioned above, many device developments for new applications were seen. Each survey subject is briey described below. 2.1 Terahertz Band It is considered that there are various applications for the terahertz band, which is located between light and radio waves and has physical properties of both waves. During this scal year, imaging systems for detecting dangerous materials and locating victims of natural disasters, detecting dangerous gases, etc. were presented as applications. Terahertz timedomain spectroscopy equipment, characterized by the technique of using a generator and a detector both operating at room temperature and aligned in combination, is commercially available. A method for trace biosensing using a metal mesh lter to improve sensing sensitivity and a method using near-eld light has been investigated. Killer applications using only terahertz waves are expected to be promoted due to the future availability of more sophisticated individual elements, downsized and lower-cost equipment and more simplied measurement methods for practical use.
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1.

Introduction

2.

Optical Devices and Materials (Working Group 1)

2.2 Near-infrared range (Wavelength range for optical communication systems) The development of faster direct-modulation light sources and external modulators, and the improvement of transmission capacity, etc. have been performed in order to adapt to the greatly increasing transmission capacity of trunk systems, access systems and data combs using xed wavelengths for optical communication systems. At present, surface emitting laser diodes are commercially available as light sources for short-distance applications at speeds up to 10 Gbps for Ethernet and interconnections. Faster laser diode operations were achieved this scal year, leading to a further increase in performance: for example, higher than 20 Gbps at the current standard wavelength of 0.85 m, and higher than 30 Gbps at 0.98 and 1.1 m, which are advantageous wavelengths that enhance performance. On the other hand, progress is being made with a multilevel external modulator using LiNbO3 for large capacity transmissions of 40 Gbps/ ch, or even higher than 100 Gbps/ch. Reports were made concerning multilevel modulation elements, such as: an integrated RZ-DQPSK modulator including six consecutive phase modulators, where silica-based PLCs and LiNbO3 are integrated in a hybrid manner; and a two-subcarrier OFDM modulator including eight consecutive chips. Reports were also made on multilevel detectors for surface- and waveguidetype 40 Gbps DPSK receivers with improvements in characteristic uniformity, modularization, integration, etc. Regarding optical receiver technology for access, it was reported that a burst-mode PIN-TIA module, available for the present G-PON and G-EPON as well as the nextgeneration 10G-EPON, shows high speed response, high sensitivity and a wide dynamic range.Conventionally, InPbased integration had mainly been used for modulatorintegrated light sources and wavelength-variable light sources. Such a semiconductor-based modulator has an advantage in that it is a compact, low-voltage driver compared with LiNbO3 modulators, which leads to the development of a multilevel InP-based integrated optical device in which multiple modulators are integrated. Concerning optical switches, an optical switch using SOA as a high-speed optical gate switch has been investigated and a report was made on an eight-channel SOA optical gate arraya high-speed SOA optical gate switch where 8:1 FFC optical couplers and a 1-channel SOA optical gate are integrated on an InP substrate. 2.3 Visible and ultraviolet ranges Laser structures employing blue-violet, nitride-based semiconductor laser diodes in visible and ultraviolet ranges, commercialized by various companies for Blu-ray devices, have been investigated for the purpose of expanding their wavelength ranges and for new applications. For the shorter wavelength range, progress has been shown in the outputpower improvement of nitride-based light emitting diodes at shorter than 360 nm and the shortening of laser diode

wavelength, for the purpose of replacing mercurial lamps used for sterilization and medical applications. For the longer wavelength range, the higher output power of a pure blue light in RGB light sources for displays and the longer wavelengths from yellow-green to green have been examined. As for the red AlGaInP-based semiconductor laser, its wavelength shift from 660 nm for conventional DVDs to 638 nm, showing higher visual sensitivity, was realized. The use of blue-violet nitride semiconductor laser diodes has been examined as a candidate for application to holographic memories. In order to realize stable single-longitudinal-mode oscillation, DFB structures and the external-resonator-type wavelength variable structures, which are used for optical communication systems, were applied to nitride-based laser diodes. Progress with nitride-based surface emitting laser diodes has also been made, and achievements include a laser diode using photonic crystals that can be oscillated in single longitudinal and transverse modes by current injection, and a surface emitting laser diode with a mirror inclined at 45 in a horizontal cavity. Light emitting diodes, including a multi-color light emitting diode realized by composition and layer-thickness changes using nitride-based selective growth, and a white light emitting diode free of uorescent material, were reported as element technologies. Regarding basic crystal growth technologies, pulse-excited deposition, which enables crystal growth at extremely low temperatures, leads to the realization of crystal growth on metal substrates and the inhibition of phase separation. It is expected that further future developments in the technologies described above may lead to the extension of wavelength ranges in visible and ultraviolet ranges, the improved performance of devices and the development of devices with new structures.

2.

3.

3.

In Japan, the number of Fiber to the Home (FTTH) subscribers exceeded the number of Digital Subscriber Line (DSL) contracts, showing a complete shift to FTTH in broadband networks. Internet trafc exceeded 870 Gbps, and is expected to reach 1 Tbps in 2009. In future optical communication networks, various services, such as IP telephones, broadcasting and mobile phones, are expected to be merged together as an important infrastructure. Based on this background, trends in optical communication network technology were investigated with consideration given to the following seven aspects. 1. Concerning trunk optical transmission systems, research and development of 100 Gbps transmission technology for next-generation high-speed Ethernet has entered full swing. In addition, it was reported that research and development of future high-performance trunk optical transmission systems is being pursued, including an optical transmission experiment with much larger capacity, longer distance and higher frequency utilization efciency than conventional optical transmission. Coherent reception
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Optical Communication Networks (Working Group 2)

4.

5.

based on digital signal processing is noted as an element technology. The electric equalization of deteriorated timevariant waveforms and the error correcting codes (Forward Error Collection [FEC] codes) are also indispensable technologies, and Low-Density Parity-Check (LDPC) codes are examined as the third-generation FEC codes. These technologies may drastically change optical transmission systems, and future trends are worth noting. Regarding access networks, the domestic shift to FTTH was obvious, as mentioned above. FTTH is spreading globally at such a pace that there are now more than 2,200,000 FTTH contractors in U.S.A. and 1,000,000 in Korea. Larger-capacity, higher-speed, next-generation optical access systems have been researched and developed, such as Optical access, mainly based on various Passive Optical Networks (PONs), and Radio on Fiber access, where radio waves and light are mixed. Regarding photonic nodes, the appropriate deployment of Mini Recongurable Optical Add/Drop Multiplexers (Mini-ROADM [8 or less ports]) and Full-ROADM (2448 ports) leads to a reduction of plant and equipment investment, and management costs, and progress in directionless optical hub nodes. Concerning optical switches, the downsizing and functional enhancement of a wavelength selection switch was reported. Optical burst/ optical packet switches for effective use of network resources have also been examined for wide-area grid networks, and an optical packet switch using Semiconductor Optical Amplier (SOA) modules was reported. Such optical nodes will reduce photoelectric conversion and enable the construction of exible networks with high utilization efciency. Furthermore such technologies are expected to curb electricity consumption. With regard to optical network control, research and development for the control of wavelength paths using Generalized Multi-Protocol Label Switching (GMPLS) is showing promise as a way to offer super large-capacity lines on demand. In this technology, it is very important to ensure optical signal reachability and cooperation with signal quality monitors. Many reports addressed technologies for converged network management to reduce the running costs of large-scale, complicated optical networks, and exible optical networks that can provide variable bands as needed were also proposed. Concerning applications, a Bandwidth on Demand (BoD) service was introduced to Very Long Baseline Interferometry (VLBI), etc., and an experiment was performed with multi-layer optical grid networks, demonstrating exible allocation of wavelength paths and MPLS paths. In regard to optic LAN, the standardization of 40 G/100 G Ethernet has progressed in IEEE. The transmission

Optoelectronic Technology Trends

standard of 40 G/100 G Ethernet using the Optical Transport Network (OTN) is being formulated in the International Telecommunication Union Telecommunication Standardization Sector (ITU-T). For storage, after the 8 G-FC (Fiber Channel of 8.5 Gbps) standard, the 16 G-FC standard is being formulated. For interconnection, faster serial interfaces, such as 8 Gbps Peripheral Component Interconnect (PCI)-Express Rev 3.0 and 10 Gbps InniBand Quad Data Rate (QDR), are being actively developed. The package standards are being converged with XFP (10 Gigabit Small Form Factor Pluggable), which is the minimum size of the 10 Gbps class, and Small Form Factor Pluggable (SFP+), and may converge with SFP+ for telecommunication in the future. Regarding 40 G/100 GbE, the second-generation is expected to be developed for the purposes of downsizing and lower energy consumption. 6. Concerning optical bers, as FTTH is being used increasingly, many reports addressed low-bending-loss optical bers, which are intended for skill-less wiring and an increased degree of freedom for wiring and have characteristics equivalent to those of standard single-mode optical bers. There are also reports concerning specic bers, such as those for higher-power ber lasers, ultra wide-band transmission and nonlinear devices, and Microstructured Optical Fiber (MOF). 7. Regarding a standardization trend, the next standard of the 10-GbE large-capacity Ethernet is actively being developed in IEEE, ITU-T, and other organizations. In addition, even in IEC, there are active discussions on the performance standard and measurement for optical bers, modules, etc., and optical bers and devices in high-power optical communication systems.

4.1  aterials for Optical Memory and Information Processing M While research and development of large-capacity media, including the post Blu-ray Disc, has shown progress, a survey was made on the current situation of recording materials for a holographic recording and a two-photon recording, for which breakthroughs are expected to be made, especially in material aspects. The steady development of hologram materials has been pursued in order to adapt such materials to various systems, but remarkable results were not been seen last year. Meanwhile, the development of two-photon absorption materials has been actively advanced, and a summary was made for representative examples of the development. 4.2 Blue Light Disk Systems This scal year, the Blu-ray Disc has become widespread. The development of multilayer and high-density technologies to facilitate the making existing systems with larger capacities has been investigated. Regarding multilayer technology, the announcement of a ROM disk with 16 layers and a capacity of 400 GB was noted, and continuing on from last year, the development of an optical pick-up using the homodyne detection method has been studied. For high-density technology, various signal processing techniques were proposed. Furthermore, standards for reliability evaluation, necessary for the development of optical disks for application in archiving digital information, was set this year and a summary was made of the latest trend. 4.3 Next-Generation Large-Capacity Technology A survey was conducted on progress made with a SIL-type near-eld optical disk, a hologram, a super-resolution disk, a 3D bit-by-bit recording, a heat-assisted magnetic recording related to large-capacity element technologies and signal processing technology, servo technology, and components related to next-generation large-capacity technologies. In the post-Blu-ray technology, more presentations were made on the Japanese development of the SIL-type near-eld optical disk, and technology related to reliability was actively presented. The hologram became the main subject in a number of technological presentations, but the material development of this is an issue. Various materials were proposed for use in the 3D bit-by-bit recording, but the material for the next-generation technology has not yet been determined. Future progress is expected to be made in this area. 4.4 Optical Information Processing Regarding the next-generation of optical information processing, while understanding this eld as the fusion of optical science and technology with information science and technology, a summary was made of the current study trends in digital optics (the fusion of light and computers), adaptive optics (the control of optical wavefronts with spatial light modulation technology), exible optics, and light-information
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4.

Concerning optical memories in FY 2008, optical memory systems using blue-violet semiconductor lasers have become further widespread, and the DVD is starting to be replaced. As the larger-capacity lower-cost semiconductor memories are being used increasingly and the distribution of contents via networks is expanding, the marketability of optical memories themselves becomes increasingly uncertain. Nevertheless, the development activities for larger capacity optical memories are still being continued. In addition, the progress of new technical developments toward IT societies has been shown in optical information processing. Various technologies that have been realized in the process of optical memory development and the production technology for optical memories have begun to be used for application development in other elds. Through a survey of technological trends in this eld this scal year, the present and next-generation optical memory systems and optical information processing were summarized.

Optical Memory and Information Processing (Working Group 3)

interfaces (light, material and information). Representative examples of optical information processing study were the same as those seen in 2007, and included optical signal (information) processing in optical communication and a super-high-speed two-dimensional optical information retrieval system using a hologram, and progress in the examples mentioned above was investigated. In addition, the optical information processing deduced from the presence of the two-dimensional spatial light modulator became the topic of discussion and was investigated. 4.5 New development in optical memory technology A survey was conducted on disk mastering technology and high-sensitivity light detection technology, in order to transfer the technologies established in the optical memory eld to other elds. Regarding disk mastering technology, the use of an electron-beam lithography for patterned-media type hard disk mastering, and the use of mastering employing a UV laser or thermal mode for the production technology development of nano-structured optical devices became the topic of discussion. Such technology was summarized as topics and discussions were held on the direct application of the BioDVD (a biosensor) in an optical detection system making use of the high-sensitivity and the high-speed unique to optical disks. In this display eld, while resource savings and price reductions are further worth noting, remarkable topics are the energy saving efforts taken in the buildup toward the accomplishment period of the Kyoto Protocol, which began in 2008, and measures to enhance environmental performance, such as the decision to apply the Home Appliance Recycling Law to displays in 2011. This trend reveals the demand for improved image quality, low-cost technology, and environment-related technologies, such as energy saving, power saving, resource saving and recycling technologies. In addition, technological progress is starting in elds such as the electronic paper, three-dimensional display, micro-projector, retina scanning display, and laser display elds. 5.1 Electronic Display Devices 5.1.1 Liquid Crystal Displays (LCDs) The two major LCD applications are big-screen TVs and mobile telephones. While the problem of view angle in bigscreen TVs has almost been solved, there are demands for high contrast, high-speed response and environmental performance. In FY 2008, a prototype of a high-speed response LCD using blue phases was announced by SAMSUNG and produced a major impact on the industry. Many reports addressed the technologies for improving contrast by controlling the local backlight brightness, while adopting an LED backlight. Although the production cost of LCDs for mobile telephones was a major issue, the
20

technology for realizing a semi-transparent display using a simple structure was developed. As the One-Seg. audiovisual devices are increasingly used, the high-resolution technologies developed for big-screen TVs and highresolution PC monitors have been used for LCDs for mobile telephones. 5.1.2 Plasma Display Panels (PDPs) Several companies announced their withdrawals from the PDP market in 2008, and real screening has begun. The global economic recession, which originated in U.S.A., accelerates this screening, while it is expected that competition between LCDs and PDPs will further intensify. There are also further demands for progress in lower-cost technology and environmental performance (resource saving, power-saving, lower waste). In response to these demands, there were exhibitions of a super-high-denition 2k 4k panel prototype and of the practical use of the technology for enhancing gradation display performance in lower brightness conditions, contrasts of several tens-of-thousands: 1, and a trial panel with a black of zero brightness, and an announcement of the aim to reduce power consumption to one-third of the current levels. 5.1.3 Organic Electro-Luminescence One year has passed since the 11-inch Organic LightEmitting Diode (OLED) television was marketed for the rst time in the world in December, 2007. While it was not easy to secure a market that can compete with existing LCDs and PDPs, further improvement in the basic performance of devices and progress in innovative manufacturing technologies are expected more widely in FY 2008. Improving the luminescence efciency of the OLED is being conducted in the two aspects of EL luminous efciency and energy conversion efciency. Especially for the blue light emitting device, there is a need to fundamentally change the design for the guest molecule and the host molecule, and the thorough clarication of the deterioration mechanism for this purpose is being conducted. 5.1.4 Field Emission Display (FED) and Micro Electro Mechanical System (MEMS) In recent years, in addition to MEMS and the FED, which is equipped with an electron source in the form of a eld emitter array employing the phenomenon of electric-eld electron emission, active research and development has been conducted of MEMS display devices that enable image display through the driving of MEMS optical shutters for optical modulation, or through the driving of MEMS micromirrors for optical reection, diffraction, and interference phenomena, rather than through the use of the phenomenon of electric-eld electron-emission. This scal year, a trend in the latest research and development of FED and MEMS display devices was investigated.

5.

Displays (Working Group 4)

Optoelectronic Technology Trends

5.1.5 Electronic paper In 2008, there was a noticeable trend in the development and application of electronic paper centered on the microcapsule-type electrophoresis method. Meanwhile, movement was also seen in the new development of electrochromism using new materials and experiments with an active matrix drive using micro-cup-type electrophoresis or an electronic liquid powder display. 5.1.6 Projection This scal year, a survey was conducted on the latest situation of each method used for micro-projectors (MD method, laser scan method, holography method) that will soon be marketed, and on a laser display that is a laseremployed projection-type large-size display. 5.1.7 Digital cinema Since standard specications for digital cinema were enacted in the Digital Cinema Initiative (DCI) in July, 2005, the full-edged digital screening of Hollywood works has become widespread, and there are now 5000 digital screens in U.S.A. as of April, 2008. In addition, about 180 digital works were released only in U.S.A. in 2007. The latest situations of standardization and apparatus development were investigated. 5.1.8 Inorganic Electro-Luminescence (IEL) Both powder-type and lm-type IEL displays, though they do not serve the main role in the display and illumination elds, have properties that other display devices and illumination sources do not possess. Research and development of uorescent materials for IEL accounts for 1020% of all EL research and development. 5.2 Topics This scal year, there was remarkable technological progress shown in: a retina scanning display employing MEMS technology; image safety to prevent photosensitive attack, picture drunkenness and sight fatigue; rewritable paper, which will soon be commercialized; and 3D broadcasting, which began with the world s rst highdenition broadcast in December, 2007. These matters were taken up as discussion topics.

6.1 Image Sensors Based on the reports from related associations (ISSCC, IEDM, Picture information media), a summary is made of the present situation and problems with imaging sensors, and study examples that indicate future directions are presented. While a CMOS image sensor with ne pixels of 1 m was commercialized using inter-pixel transistor sharing technology, a limit to how far pixel size can be reduced has become apparent. Research and development is being carried out on the suppression of 1/f noises and Random Telegraph Signal (RTS) noise in order to gain higher sensitivity of ne pixels, and also on the suppression of color mixing due to cross-talk between adjacent pixels. As a solution for these issues, rear side incidence is being examined for practical use by various companies. Discussions are being held on the future application in various elds of lower power consumption, a wider dynamic range and functional enhancement (3D measurement, pH imaging, polarization imaging). 6.2 Disaster-prevention-related systems (Optical fiber technology in River control) An optical ber technology used for river control was focused on and investigated. According to the e-Japan plan 2002, optical bers were laid at rivers, roads, harbors and sewers, leading to the completed laying of 36,000 km of optical bers by FY 2007. Regarding rivers, the optical bers are being used mainly for data exchange between administration ofces and data transmission from various sensors, and they are also being used in monitoring apparatuses or sensors employing image processing technology to monitor facilities and disasters; for example, monitoring by optical ber sensors (water level measurement, dike slope displacement measurement, landslide/falling rock monitor, etc.) and monitoring by image-processing systems (dry avalanche monitors, water level/speed measurement, etc.). The fundamental principle of the optical ber sensors includes Rayleigh scattering, Raman scattering, Brillouin scattering, FBG, the total reection mirror, and light-wave PMC. Reports were also made on these principles and on examples of system applications. 6.3 Biometrics (Light application to Medical imaging) Regarding medical institutions, a variety of biometry is used for disease inspection, diagnosis and treatment, and is introduced as an important technology to support security and efciency. Especially, the role of image information, such as diagnostic imaging and imaging processing systems, is expanding. Specically, diagnosis has shifted from that using conventional lm imaging (analog) to image processing (digital), including tomographic apparatuses for the living body (X-rays CT, MRI, PET, supersonic wave, NMR others). Concerning treatment, research and development of an operation-assistance robot and an operation navigator has
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6.

This subcommittee investigated a wide range of trends in the latest human interface technologies, from an input device to application technologies. Typically, it conducts an in-house survey on technological trends in each of the elds of an image sensor device, an image input device/apparatus, a disaster prevention-related system, biometrics, ubiquitous interaction, and a relief/security service, but it added the eld of entertainment this scal year.

Human Interface (Working Group 5)

progressed rapidly, and the systematization of an endoscope camera and surgical instruments has greatly advanced the interface between them, leading to telemedicine, which enables treatment even if a doctor is not nearby. Reports were made on the latest information on various medical imaging devices and medical robots used for diagnosis and treatment. 6.4 Image Input Devices Image input devices are largely affected by the evolution of digital cameras. For example, a compact camera equipped with a 15-megapixel image sensor was launched. CMOS sensors with less power consumption are used for digital cameras in mobile telephones. A CMOS sensor with 12.25 megapixels has also been developed. For optical systems, an aspheric has increasingly been adopted together with a glass-mold lens, leading to a reduction in the number of constituent sheets and less distortion. Meanwhile, progress has been made in the development of a compact unity-magnication micro-optical system using a microlens array and a wafer-scale camera module to be implemented as an image input module based on a new concept. 6.5 Ubiquitous Interaction (Universal Web Design) The purpose of the universal web design is to make it easy for many people, including senior citizens and handicapped persons, to use the web. While the technology for assistance with the writing of web contents was investigated last year, the technology for assistance with the outputting of web contents was investigated this year. For universal design, three guidelines (a way for writing contents, writing tools, output devices) were determined according to the WWW Consortium, and activities have progressed based on these guidelines. Software to read the web out in voice form includes a screen reader (reading out contents on a screen and PC operations) and a voice browser (only reading out contents on a screen), which still have issues (sound cutting, reading-out speed, extent of details read). Braille-dot displays display characters in an up-and-down motion of multiple pins (a display of 10 characters in the horizontal direction and a display of characters in a rotational manner). There is also software for display enlargement. 6.6 Entertainment Interfaces The terms Augmented Reality, as well as Virtual Reality have become commonly heard phrases. Generating this sense of reality is indispensable for the entertainment technology. The intermediate between the real world and the virtual world is called Mixed Reality, while Augmented Reality is expanded reality and Augmented Virtuality is very close to virtual reality. In an Augmented Reality environment, extended information has to correctly follow the movement of a true object which moves autonomously or is moved by a user. The movement of the true object is followed using
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technology such as image recognition, and the output of Augmented Reality is adjusted according to the result. Various technologies for merging input- and output-systems have been proposed. For example, an extended picture is given as an input of an interposed robot. As the sense of reality-generation technology covers a wide range of systems, including auditory and tactile systems, in addition to visual systems, there are many applications. 6.7 Home security / reliable service (Robot instrument assisting for improved quality of life and autonomy) As population aging is advancing, against the background of nuclear families and the declining birthrate, a robot assistant is being developed to meet the various needs of vulnerable people, such as senior citizens and physicallydisabled people. Autonomy-assistance robots include a driver-less car, various forms of daily-living assistance (walking, bathing, toilet, cooking, eating, and cleaning), and articial limbs and prostheses for physically disabled people. The development of robots to assist caregivers has been conducted; for example, a robot suit for walking, a robot for therapy, various rehabilitation robots, communicationassistance robots (for human symbiosis, hobbies, creating blogs, etc.), and service robots for use in the health-care industry. Progress is being made in the development of faceimage processing and smile-measurement technology used for such forms of communication.

7.

This scal year, the survey of processing and measurement included Picosecond lasers and Yb ultra-short pulse lasers, in relation to light source technology; Laser cleaving of glass, in relation to processing technology; and Applications of the optical frequency comb and Sugarcontent measurement by near-infrared light, in relation to measurement technology. 7.1 Light Source Technology (1) Pico-second laser In Japan, the development of an ultrashort pulse laser is centered on the femtosecond titanium-sapphire laser. This laser has a low power-to-light conversion efciency, reaching at most 1%, due to the use of the second harmonics emitted from a 1 m solid-state laser as an excitation light, which is a barrier preventing the wide use of this laser in industrial applications. Meanwhile, semiconductor-laser-excited solidstate lasers and ber lasers have been developed mainly in Europe. While their pulse widths are in the picosecond to sub-picosecond range, which means their pulse widths are longer than that of the titanium-sapphire laser, their powerto-light conversion efciency is overwhelmingly higher (about 10%). Regarding the possibility of processing, it is known that sufcient processing performance can be obtained for scribing processing of hard-to-machine materials, even

Laser Processing and Optical Measurement (Working Group 6)

Optoelectronic Technology Trends

using a picosecond pulse. At last, the development of the picosecond laser started one or two years ago in Japan. Tohoku University and Sumitomo Osaka Cement have collaborated and made progress in research and development of a picosecond laser for microscopic spectroscopy, while Kyushu University and Chiba University have collaborated and made progress in research and development of an organic-waveguide-type picosecond pulse laser. Optical Parametric Chirped-Pulse Amplication (OPCPA) is gaining attention as a rapidly developing technology that supports high-intensity laser physics, such as high-order harmonics generation and attosecond pulse generation. Moreover, the research and development of improved-output-power picosecond lasers at Chiba University and Megaopto Corporation has been actively conducted for the purpose of processing. In Europe, regarding picosecond lasers, in which a rod-type laser medium is used, picosecond laser oscillators for industrial applications have been developed by High Q Laser Production GmbH and Time-Bandwidth Products AG using SESAM technology, while LUMERA LASER GmbH is producing a lineup of wavelength conversion models. On the other hand, progress is being made with high-power high-repetition picosecond lasers showing the characteristics of various companies, such as Trumpf Corporation, which is using a disk-type laser medium, and Corelase Oy, which is using a ber laser method. The research and development of microprocessing using picosecond lasers for the purpose of achieving higher efciency and higher quality has been conducted in Europe, and future development is expected. (2) Yb ultrashort pulse laser Megaopto Corporation has developed an ultrashort pulse laser, in which a Yb: YAG crystal is used as the laser medium. It has high energy efciency, a picosecond or sub-picosecond order pulse width, and a 10 W-class output.

The laser system and the power performance are shown schematically in gure 1. For a single prototype amplication module, previous development has lead to an output under CW operation and a light-light conversion efciency of 30.2 W and 27% respectively. A beam quality of M2 <1.1 was achieved, and so far a maximal energy per pulse of 2 mJ (at 10 kHz) has been obtained. It was conrmed that even such a high energy level did not cause any damage to the elements that constituted the system. In addition, the extension of spectral width after the amplication was achieved, to a width of up to 1.6 nm by spectrum control using an acoustooptical device. These results indicate that a pulse width of <2 ps can be achieved. It is expected that the energy consumed in this case of developing technology can be reduced to as much as about 50% as compared with current CO2 lasers and Nd: YAG lasers, and to around 10% as compared with the titanium-sapphire lasers that are used at present for next-generation processing. 7.2 Processing Technology (1) Laser cleaving of glass In recent years, a cleaving method using lasers has been used from the viewpoint of scalloping glass materials, suppressing microcracks and processing wastes (carets). In particular, a laser cleaving apparatus is noted for the purpose of upsizing and scalloping glass substrates used in production processes including FPD panels. In order to process transparent glass substrates, CO2 lasers, whose wavelength is out of the visible range, or femtosecond lasers, which enable non-linear processing, are used. Regarding CO2 lasers, there is a cleaving method using thermal stress. This is a method to extend a crack by stress that occurs at the time of cooling after local heating on a glass substrate by laser thermal injection. The cracked glass substrate is divided by

Test of CW operation using Prototype module

Output-power (w)

Input-LD power (W)

Diameter of ber Optical system Crystal

optimization

Figure 1 The laser system and the power performance

23

mechanical stress application or a thermal process in the post-process. A study on the processing mechanism of laser cleaving using the thermal stress has been pursued, which leads to a cross scribing that, based on an observation of distance and depth in the heating and cooling areas and the crack shape in the cutting section, enables a crack to be created and extended in a direction perpendicular to the already-cracked part. Various other investigations have been made on such technology as that for scribing a crack on a glass substrate and then developing the crack in the depth direction of the substrate with another laser, or a method for splitting a glass substrate after diamond scribing in order to increase cutting speed. As a glass substrate becomes thinner, the formation of stress distribution suitable for crack development becomes difcult. Due to this fact, Cyber Laser Inc. is currently developing a femtosecond laser source with high average output power and its processing technology, and has realized cleaving of more than 300 mm/s. In order to perform laser cleaving with a femtosecond laser, a multiphoton absorption process is used, where a focused femtosecond laser beam is propagated in a glass substrate in an optical axis direction in a focused state due to plasma divergence and diffraction, and the balance of selfconvergence owing to the optical Kerr effect (Self-trapped lamentation). The realization of an extremely ne laser beam due to the process mentioned above enables a scribing of ultra thin substrates whose thickness is less than 0.2 mm. For thinner and larger-area glass substrates, it is considered that the laser cleaving technology, whose processing performance is higher than that of machining, such as using conventional diamond scribers, and whose processing speed has become equivalent to that of machining, will be used more widely in production sites in the future. 7.3 Measurement Technologies (1) Application of the optical frequency comb The concept of the optical comb has been debated since a relatively early period by people including Professor Hnsh of the Max-Planck Institute. One of the technologies used for realizing this concept is that of femtosecond mode-lock laser technology. Fine frequency components of the modelock femtosecond laser are regularly lined up on a frequency axis, which is called an Optical comb. While various applications, including precise measurement of the optical frequency, have been pursued by phase control of the components described above, the technological development related to this phase control and its application measurement technologies are being actively conducted at present. The femtosecond mode-lock laser had been developed through extensive use of a pigment solution as a medium. As Tisapphire (a crystal) and the second harmonics (532 nm) of a semiconductor-laser-excitation-type YAG laser as an excitation light source have become available, the reproducibility and stability of laser oscillation have been greatly improved as a result of merging these technologies.
24

A broad spectrum (an optical comb) was realized after marketing laser products with a pulse width of 6 fs. Furthermore, a broader light comb ranging one octave was realized by using a photonic crystal ber. A precise measurement of the optical carrier-envelope frequency was also realized through combination with a non-linear crystal (a light frequency doubler). In addition, the oscillation of an ultrashort pulse laser with an optical ber ring resonator achieved by Professor Nakazawa of Tohoku University is an impressive basic technology. From this result, an all-optical ber system used to generate the light comb was realized. The light comb is used for length measurement, and there are mainly two methods that are showing progress at present. One is a conventional optical-modulation-type distance measurement method (a range nder). Another is a method to lock a phase of the semiconductor laser to that of the optical comb by using the optical wave interference method. For the measurement of an end standard, etc., if semiconductor lasers showing output wavelengths at 635 nm and 780 nm are used while performing the phase lock between them, the mixed wavelength is 3.4 m and the matching range is 3.4 m/4 0.85 m. In addition, a picometer measurement by the interferometer using the optical comb and a frequencyvariable semiconductor laser was reported. It was reported that as a national strategy, a budget for the technology in the elds mentioned above, in addition to basic technology for a unit system in the Metre Convention, should be provided in order for Japan to be the rst country in the world to develop such technology. (2) Sugar content measurement by near-infrared light So far, much research and development has been conducted on a nondestructive technique for measuring the sugar contents of various fruits and vegetables. At present, measurement devices using near-infrared spectroscopy have been commercialized, and are used at the fruit sorting centers of each producing area. However, the conventional nearinfrared spectroscopy method for the purpose of a nondestructive measurement of sugar contents in fruit requires the acquisition of continuous spectrum data, and sophisticated apparatus including a halogen lamp and a spectrometer is necessary. On the other hand, a semiconductor laser or a light emitting diode has superior characteristics, in that they are compact, light-weight, and inexpensive, and use low-voltage drivers. They are also considered very advantageous when used as a light source for nondestructive measurements. The inuence of disturbance such as sunlight can be easily prevented by a lock-in amplication technique employing intensity modulation and using a light emitting diode as a light source. However, in order to realize a nondestructive technique for measuring the sugar content of fruit that uses a semiconductor laser or a light emitting diode as a light source, a new physical quantity and a corresponding measurement method that are not susceptible to any disturbance are required. Three-Fiber-Based Diffuse

Optoelectronic Technology Trends

Reectance Spectroscopy (TFDRS) was developed as one of the measurement methods to realize this technique at Industrial Technology Center of Nagasaki. At present, a portable sugar-degree meter, in which a light emitting diode is used as a light source, is planned to be commercialized. Weighing about 190 g, it is the lightest nondestructive sugardegree meter in the world. TFDRS has an advantage in that it is not affected by the change of optical path length when the component analysis is made in a scattering body that produces strong light scattering. It is considered that TFDRS has a wide application range: from a quality measurement of food, including fruit that has so far been the object of near-infrared spectroscopy, to use in a living body medical test. Especially in the case of the composition analysis for living biotissues, error factors that disturb the measurement are light scattering by the biotissue and a change of the optical path length provoked by the expansion and shrinkage of a blood vessel due to blood ow. However, it is thought that TFDRS enables measurement that is not inuenced by these factors. Progress is being made in the research and development of such technology employing near-infrared light to make it a more familiar technology, used in elds from food quality control to human health care.

from low-quality raw materials, the effects of crystal defects, grain boundaries and heavy metals need to be understood sufciently, and are being investigated as the subjects of fundamental research. Furthermore, there were new movements in crystal growth technology, including Mono2, a single-crystal growth process that employs the cast method and was announced by BP Solar International Inc. Regarding cell structure, high-efciency solar cells with an emitter-wrap-through structure or a back contact type structure have been actively developed, and the electrodes for both structures are located on the rear side. SunPower Corporation has achieved a high-conversion efciency of 23%, though only at the research and development stage. Therefore, a module efciency of 21% is now in range. It is expected that the technology and market may be divided into relatively expensive high-efciency cells and cheap low-conversion-efciency cells in the future. Many reports concerning thinner solar cells were announced, and slice technology using hydrogen ion injection has been investigated for use in mass production. 8.2 Silicon Thin Film Type Photovoltaic Cells Continuing from scal 2007, large international meetings, namely the 23rd EUPVSEC (Valencia) and the 33rd IEEEPVSC (San Diego) were held in scal 2008. However both meetings were held by the beginning of September, before the Lehman shock occurred. Regarding academic aspects, many reports addressed contents that had already been reported several years ago in Japan, which is the world leader in lm silicon technology, and discussed different sizes of substrates, but they were poor in terms of performance enhancement, new ideas and concepts. In particular, there was a dramatic decrease in announcements from the Japanese companies that had been academic leaders when it came to cell efciency (Kaneka Corporation, Mitsubishi Heavy Industries, Ltd, Sanyo Electric Co., Ltd, Sharp Corporation, and Fuji Electric Holdings Co., Ltd). The main reason for this trend is that, for the companies, there is much importance on production technology and manufacturing technology for the purpose of increasing the production of thin-lm silicon. In addition, it is thought that a factor for this trend is due to the shrinking budget of the national project for the research and development of thinlm silicon solar cells. 8.3 Compound Thin Film Photovoltaic Cells This scal year has been greeted worldwide as a turning point and labeled as the rst year of CIGS commercialization. It is expected that the production performance of CIGS solar cells will increase rapidly in the future and exceed one gigawatt a year in a few years time. The conversion efciency of current large-area modules is around 1213%, so there is still room for development considering the 20% efciency of small-area cells. Regarding small-area cells, the conversion efciency is still far from the theoretical efciency, so clearly
25

8.

In the last scal year, the main topic was the shortage and skyrocketing prices of silicon. This year, the price of silicon fell, apparently due to oversupply, but in the long-term raw silicon will surely be required for crystalline silicon solar cells in consideration of the supply and cost aspects. Due to these factors, the movement toward thinner and more efcient silicon solar cells will continue. It appears that the production of lm-type solar cells will enter full-swing this year. 8.1 Crystalline Type Silicon Photovoltaic Cells Continuing from the last scal year, the production of crystal silicon solar cells has increased steadily. In addition to Q-Cells SE in Germany, the growth of Asian manufacturers, such as Suntech Power Holdings Co., Ltd. in China, and Motech Industries, Inc. in Taiwan, is particularly signicant. On the other hand, there have been impressive entries into the solar cell industry from the electronic devices industry, such as the setup of a solar cell manufacturing company by INTEL Corporation and the shifting of production from thinlm solar cells to crystal silicon solar cells by LG Electronics Inc. of Korea. Concerning the supply of silicon feedstock, which was the biggest obstacle to the mass production of crystal silicon solar cells, a solution for the issue is coming into view. On the other hand, an active evaluation is being made of techniques intended to be used for mass production, such as the metallurgy method or the zinc reduction method, which were developed from the viewpoint of lowering cost. Regarding the handling of polycrystalline substrates prepared

Photovoltaic Energy (Working Group 7)

the full potential of CIGS solar cells has not been reached. The improvement of conversion efciency, which directly results in a decrease in cost, is important. First Solar Inc. (U.S.A.) plans to produce close to 1 GW of CdTe solar cells, which are not recognized in Japan, at a lower cost. Some companies appear to be following First Solar, and future trends will be worth noting. 8.4 Dye-Sensitized Type Photovoltaic Cells Regarding dye-sensitized solar cells, study has progressed in areas such as modularization technology and durability evaluation, aiming at practical use. Research organizations are increasingly showing large-scale prototypes of dyesensitized solar cells at exhibitions such as PV EXPO, PV JAPAN and CEATEC because there are fewer limitations in the process compared with conventional solar cells that employ semi-conductors. In addition, there were also announcements regarding durable cells and modules, while further improvements are being made with sealing technology and modularization technology. While there have been no updates regarding conversion efciency for dye-sensitized solar cells since the efciency level of 10 to 11% was reported more than two years ago, there were reports on an efciency close to 12% for cells that were not evaluated at public organizations and on a submodule efciency that exceeds 8% (measured at AIST). Efciency is steadily improving. 8.5 Organic Thin Film Photovoltaic Cells Continuing from the last scal year, a synthesis of new materials designed for organic thin-lm solar cells and the application thereof has been actively developed, and an update regarding the maximum efciency (self-measurement) was reported. Many reports addressed improved characteristics of solar cells using new types of buffer layers (carrier transport layers), while the modication of generation layers and electrode interface layers continues to be noted. 8.6 Super high-efficiency solar cells Regarding trends in research and development of super high-efciency solar cells, there was an almost complete shift from lattice-matched systems to lattice-mismatched systems. As for mass-produced products, the lattice-matched system is the predominant system, whose efciency is rapidly increasing at a speed of about 12 percentage points a year. The main manufacturers overseas are thought to produce ten to several dozen megawatts a year. The companies announced that they are aiming to achieve a production performance of several hundred megawatts a year and an efciency (for mass-produced products) of around 43% within the next several years. 8.7 Third-generation solar cells In recent years, reports concerning third-generation solar cells have been increasing signicantly. In particular there
26

were many reports about applications of nanotechnologybased solar cells, but there was also a very wide variety of other examples of studies concerning subjects from manufacturing examples of simple nanostructures to the characteristics of solar cells.

9.

9.1 Aim of survey of the working group on Medical technology in the Optical industry Working group 8 on the Medical Optical-Industry Technology, aiming at surveying the trends in applications of optical technology to the medical industry and specifying the problems inherent to medical applications, started investigation activities from this scal year (2008). This scal year, the subjects of the survey to grasp the current situation of laser medical care in each area of medicine, in terms of laser treatment apparatus, include dentistry, a eld for which there is a vast market, and dermatology, which has taken advantage of lasers for a long time. While in terms of new laser medical care technology, the survey subjects include photodynamic diagnosis, which has recently achieved such results as a minimally invasive therapeutic approach against cancer, and laser angioplasty, which is being performed with highly advanced medical technology. Finally, a summary was made on problems in the laser medical industry. 9.2 Recent laser therapy in dentistry There is a wide variety of laser applications in the oral cavity region, from surgical applications, including the incision and coagulation of soft tissue, and dental pulp treatments, including periodontal treatment, pulpectomy and infected root canal treatment, to tooth cutting and cavity prevention, as well as pain relief and the cure or improvement of stomatitis, dentin sensitivity and temporomandibular disorder, etc. Lasers commonly used in dentistry include a tissuesurface-absorption type laser such as the CO2 laser and the Er: YAG laser, and a tissue-transmission type laser such as the Nd: YAG laser and the semiconductor laser. Originally, more than one laser was needed for cases of treatment in narrow oral cavities, where soft and hard tissues coexist. However, by adjusting irradiation conditions (power density, etc.) and devising irradiation methods (use of absorbent pigments), while making maximal use of wavelength characteristics, a single laser can now be used to treat many different problems. 9.3 Current situation of laser therapy in dermatology Laser therapy in dermatology has been adapted for health insurance and is performed with a dye laser for the treatment of simple angiomas, strawberry-shaped angiomas and teleangiectasia, and with a Q-switch ruby laser or a Q-switch alexandrite laser for the treatment of Ota s nevus, ectopic

Medical technology in the optical industry (Working Group 8)

Optoelectronic Technology Trends

Mongolian spots etc. All therapy is performed based on the theory of selective photothermolysis. A dye laser has a wavelength of 585 nm and a pulse width of 450 sec. A laser beam at 585 nm reaches the interior of an expanded blood vessel without being absorbed by normal cells, and is absorbed well by the oxidized hemoglobin of a red blood cell. The laser energy is converted into thermal energy, and is diffused from the red blood cell into a blood vessel wall and destroys the blood vessel wall, which leads to the treatment of angiomas. The Q-switch ruby laser has a wavelength of 694.3 nm and a pulse width of 28 ns, while the Q-switch alexandrite laser has a wavelength of 755 nm and a pulse width of 50 ns. Laser beams at wavelengths of 694.3 nm and 755 nm are absorbed well by melanin, and are used to treat diseases caused by melanin. 9.4 Photodynamic therapy PhotoDynamic Therapy (PDT) is a new therapy that enables selective treatment of lesions, including cancer, through the combination of a drug (a tumor afnity photosensitive material) and an excitation light (mainly, a laser beam). This therapy is characterized in that there are extremely few side effects because the treatment area can be limited by drugs that accumulate in tumors and excitation lights that enable local irradiation, in that the function and shape of the treatment area remains intact without suffering from damage, and in that the treatment is available regardless of the type of cancer. As an example, the treatment of early lung cancer with PDT demonstrated not only the function of preserving the treatment area, which is an original aim, but also a therapeutic outcome that is equivalent to that of surgery. It may be said that the treatment is a therapeutic method suitable for an aging society because it causes less strain on the body during operation as compared with surgery and no suffering from side effects, such as postoperative pain. 9.5 Laser angioplasty Laser angioplasty is a therapeutic approach that enables essential vasodilation and the removal of materials causing angiostenosis. This approach is particularly effective for high-level strictures and obstructive lesions, but has very strong effects that lead to frequent complications, such as artery dissociation and perforation. Also, in many cases additional treatment is required because sufcient vasodilation can not be achieved with laser power alone. A current challenge is to perform surgical removal while reducing complications, though these procedures conict. 9.6 Problems in the laser medical industry Lasers have been used in medical care for a long time, in various hospital departments, such as coagulation in ophthalmology, and coagulation, incision and transpiration (Laser scalpel) in surgery, etc. However, the best optical
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technology is not applied in a timely manner to the eld of medicine, in particular, in the eld of medical care. One reason is the conservative situation at present, where apparatus manufacturers do not conduct clinical trials for new inexpensive apparatuses, but continue to deal with old, expensive apparatuses. In recent years, while it is often said that companies want to apply their laser sources developed for optical communications to biomedical elds, there are but a few cases of new light sources being used for new diagnosis and therapy technology or apparatus. In order to overcome such a situation, it is necessary for light source developers, researchers of basic technology for diagnosis and therapy, medical apparatus developers and doctors as apparatus users to work together through translators, communities, etc. Recently improved laser technologies, such as compact lasers, a wavelength range expansion under laser oscillation, an increase in irradiation energy, and a shorter pulse width, should prominently contribute to the development of medical care technology. As part of the Optoelectronic Technology Trend Research Committee activities, every year, the committee conducts an overseas eld survey on optoelectronic technology development and trends. This scal year, U.S.A. was designated as the survey area. The survey was carried out in order to investigate the current situation surrounding technological development and future actions through attending lectures and exhibitions at Photonics West 2009, sponsored by the SPIE (The International Society for Optical Engineering), and a visit to a venture company, Microvision, Inc., which deals in compact display screens, the creation of a new market for which is expected in the future. The technical lectures in Photonics West 2009 were divided into four areas, as they are every year. The areas were: BIOS, biomedical optics; LASE, lasers and applications; MOEMS-MEMS, micro- and nanofabrication; and OPTO, integrated optoelectronic devices. There were 3,275 lectures in total. The BIOS Exhibition and Photonics West Exhibition were also held, in which 165 companies and about 1100 companies exhibited, respectively. As for the overall impression gained, more action could be seen in the BIOS area than the other areas. In conjunction with this, it was noted that a shift from other elds, for example from LASE and MOEMS-MEMS to medical elds, is underway. Japan is relatively behind when it comes to optical applications to medical elds that are dealt with in BIOS. There seem to be only a very few technological problems, but regulations are causing various obstacles. It is hoped that Japan will become the leader of this eld also in the future. Microvision, Inc. is developing small displays and image engines, and its main business is to develop them for the consumer market and automotive market. The company has

10. Overseas Field Survey

developed a display engine with a two-dimensional MEMS scanner, called PicoPTM, which enables rich-color display, high-resolution and a large display in a super-compact video projector. In addition, this engine can be mounted onto mobile devices, such as mobile telephones, PDAs and digital cameras, due to its extreme compactness and low power consumption. Moreover, it seems that this engine can be developed for use in integration form in in-car heads-up navigation displays, and in glasses and helmet-mounted displays. We would like to express our sincere gratitude to each of the facilities visited and to all those who assisted in the survey. (1) Dates and destinations of the visit
Date 1/25 (Sun) 1/26 (Mon) 1/27 (Tue) 1/28 (Wed) 1/29 (Thur) 1/30 (Fri) 31 (Sat) Region (Leg) (Tokyo and Kansai San Jose) San Jose Same as above San Jose Seattle Seattle Redmond (SeattleTokyo) Destination (Movement) Photonics West 2009 Same as above (Movement) Microvision, Ltd. (Movement) Display-related Lecture and exhibition attendance Same as above Major object of survey

12. Patent Trend Survey Committee

12.1 Survey of Patent Trends Related to Optoelectronic Technology This scal year, the working group system was continued and investigation and analysis were carried out. Fixed-point observation was carried out on patent application trends in each of the industrial elds of optical communication networks, optical memories, display screens and solar energy. A detailed analysis was carried out on patent trends in each of the technological elds of optical metro networks, superresolution recording, near-eld light recording, organic EL, thin-lm solar cells and dye-sensitized solar cells. In addition, illumination was newly added as an analysis object, and is planned to be added to the industrial elds and investigated in a xed-point manner after the next scal year. 12.2 Informal Meeting with the Japan Patent Office (December 2, 2008) A total of about 70 people participated in the meeting. Such participants included: 10 members of the Patent Evaluation First section of Optical Devices, including Mr. Kashiwazaki, the Evaluation Administrator; 12 members of the Patent Trend Survey Committee, including Dr. Ito, the Chairperson; and about 50 supporting members. This scal year, lectures related to the theme of Current Trends in Optoelectronic Technology, were given by the following three members of the Optoelectronic Technology Trend Survey Committee, under the leadership of Prof. Nakano, the Chairperson. Summary of Current Trends Prof. Nakano, Chairperson Input and Output Devices (Applications in the Health and Medical Fields) Mr. Oshima, committee member, 5th subcommittee Photovoltaic Power Generation Dr. Hishikawa, committee member, 7th subcommittee Meanwhile, Mr. Kashiwazaki, the Evaluation Administrator of the Patent Ofce, presented a lecture titled Situation of Examination of Optical Devices and Patent Policy, in which he presented various situations and policies concerning patents. Explanations were provided, in particular, on reducing the application costs and processing of the rapidly increasing foreign applications through such means as the standardization of the application format, the mutual use of electronic data concerning priority documents, and the exclusion of multiple evaluations such as those of patent examination highways. The participants had enthusiastic discussions and exchanged opinions on the contents of the lectures. 12.3 Patent Seminars The lectures held this scal year are listed below: The 1st (June 30, 2008): Trap of Patent Disputes Mr. Kusuyata Shimamoto (Shimamoto International Patent Ofce, Director)
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(2) Members of the survey team (titles omitted) Leader: Yoshiaki Nakano (Chairperson, Optoelectronic Technology Trend Research Committee) Yasuhisa Odani (Chief Executive Director, Optoelectronic Industry and Technology Development Association) Member: Kazuyuki Saigusa (Association of Optoelectronic Industry and Technology Development Association, Development Division, Assistant Department Manager) Member, Secretariat: Hiroyuki Yamaguchi, Wataru Yamagishi (Optoelectronic technology trend survey Committee secretariat)

11. Flash Report on International Conferences

The Flash Reports on International Conferences constitute an information service that distributes the latest trends in optoelectronic research and development presented at major international conferences. The reports include the subjective opinions of the author, and are sent via e-mail within one or two weeks of conferences. This scal year, 38 ash reports were distributed. The report title, conference dates and eld of technology are shown in the following Table 1

Optoelectronic Technology Trends

Table1 List of Flash Reports on International Conferences in FY 2008

No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 ISSLED2008 Short Report SID20088 Short Report [3D] SID20088 Short Report [PDP] LPM2008 Short Report WMSCI2008 Short Report ILCC2008 Short Report ODF 08 Short Report OECC/ACOFT2008 Short Report ODF 08 Short Report Intersolar 2008 Short Report NREL Worshop Short Report EU-PVSEC Short Report EPCOS2008 Short Report 23rd EU-PVSEC Short Report ECOC2008 Report [Optical Network] 2008 ISLC Short Report MOC 08 Report 23rd EU-PVSEC Short Report ECOC2008 Short Report [Materials, Devices] ECOC2008 Short Report [Trunk System] GFP2008 Short Report IWN2008 Short Report AHPSL2008 Short Report FACSS 2008 Report ICALEO2008 Report IMID2008 Short Report IP2008 Short Report IDW 08 Short Report [OLED] IDW 08 Short Report [PDP] IDW 08 Short Report [LCD] IDW 08 Short Report [3D] APDSC Short Report PVSEC18 Short Report [Silicon Thin Film Cell] PVSEC18 Short Report [Others] PVSEC18 Short Report [CIGS Thin Film Cell] PVSEC18 Short Report [Overview] Photonics West 2009 Short Report [Processing, Measuring] Photonics West 2009Report [Medical] Field 1: Optical materials and devices, Field 3: Optical storage/information processing, Field 5: Human interface, Field 7: Photovoltaic energy, Flash Report Title Exhibition Period 2008/4/27-5/2 2008/5/18-23 2008/5/18-23 2008/6/16-20 2008/6/29-7/2 2008/6/29-7/4 2008/6/9-11 2008/7/7-10 2008/6/9-11 2008/6/12-14 2008/8/3-6 2008/9/1-5 2008/9/7-9 2008/9/1-5 2008/9/21-25 2008/9/14-18 2008/9/25-27 2008/9/1-5 2008/9/21-25 2008/9/21-25 2008/9/17-19 2008/10/6-10 2008/10/6-8 2008/9/28-10/2 2008/10/20-23 2008/10/14-17 2008/11/16-20 2008/12/3-5 2008/12/3-5 2008/12/3-5 2008/12/3-5 2008/12/15-17 2009/1/19-23 2009/1/19-23 2009/1/19-23 2009/1/19-23 2009/1/24-29 2009/1/24-29 Field 2: Optical communication network, Field 4: Display, Field 6: Processing/measuring, Field 8: Medical technology Technology Field 1 4 4 6 5 4 6 2 6 7 7 7 3 7 2 1 1 7 1 2 1 1 6 8 6 4 3 4 4 4 4 3 7 7 7 7 6 8

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The 2nd (October 17, 2008): Effective Utilization of Your Company s Technology and how to Advance Strategic Cooperation Mr. Hisao Takahashi (Mitsubishi Research Institute) 12.4 Patent Forum The OITDA Patent Forum, consisting of reports on the results of this scal year s patent trend survey and special lectures, was held in Gakushi-Kaikan (Chiyoda-ku, Tokyo) on March 5, 2009. Attendants were supporting members and the general public, numbering about 90 people in total. At the beginning of the forum, Mr. Odani, Chief Exective Director of the OITDA, said, The growth rate of the optical industrial market was 1.3% in FY 2008. It is time to think

about the future. How to make use of patents is important. While the Patent Trend Survey Committee reported the results of this scal year s optical technology patent trend survey, two special lectures were presented: Innovation Initiative Trinity Management Determines the Life and Death of the Business by Dr. Kenichiro Senoh, contract professor of Tokyo University (Intellectual Assets management); and Current U.S. Patent trends, Patent Litigation Defense of Japanese Enterprises in U.S.A. by Mr. Yoshinari Kishimoto, representative partner of Sughrue Mion Foreign law Business Lawyers Ofce.

30

Technological Strategy Development

OITDA undertakes activities in its Optoelectronic Technology Roadmap Development Committee with the aim of ascertaining future development of the optoelectronic industry, and seeking a direction for optoelectronic technology R&D. The Breakthrough Technology Committee works to focus on cutting edge technologies with specic future potential, and investigates promotion of R&D through discussions between industry, academia and government. This scal year, due to the recent prominence of global warming issues, the Optoelectronic Technology Roadmap Development Committee surveyed technology trends concerning the four elds of networks, displays, storage and lighting with the theme of optoelectronic technologies which contribute to energy conservation, and developed a technology roadmap to the year 2025. Also, activities of the Breakthrough Technology Committee raised the following two themes. The rst is agri photonics, which is technology utilizing articial light in agriculture. The committee surveyed and discussed its trends, particularly from the perspective of the relationship of agricultural technology with optoelectronic technology and the optoelectronic industry. The second is silicon photonics, which aims to resolve conventional bottlenecks of optics and electronics by fusing optics and electronics on a silicon substrate. The committee surveyed and discussed its future potential focused on needs and expectations, especially from the aspect of applications. This project was subsidized by the JKA through its Promotion funds from KEIRIN RACE.

1.

Introduction

lowers power consumption, and technology which raises transmission capacity are important in order to raise energy use efciency. For lower consumption, we see that stand by power control, next generation energy conservation device development, and variable bit rates are effective. For higher capacity, we see that trafc control in P2P communication and trafc control by time shifting are effective. This claried that developing these technologies will bring large progress in energy conservation. 2.2 Displays Regarding display energy conservation technologies to 2025, we surveyed and investigated LCDs, plasma display and organic LEDs and their shared technologies, mainly for large stationary TVs, then developed a roadmap and estimated energy conservation results. Along with larger display size, a concern is that overall TV power consumption at current technologies will grow to about triple today's level by 2025. However, progress in energy conservation technologies can reduce power consumption by 1/3, which just offsets the triple growth, and overall TV power consumption is forecast to be maintained at current levels. 2.3 Storage Global digital data volume is growing explosively, and power consumed for storage is becoming a serious problem. Optical memory is expected to have the potential to solve the problem. Currently, one cannot say that optical disk library systems are widely known in the world, but it is a system which must be kept in mind when considering Green IT, along with SSD. Actually, from the viewpoint of Green IT, there are now moves to achieve business use optical disks, and Japan is the center of optical disk technologies, thus it should use these to contribute to the environment. There are now expectations for resolving power and environmental problems by establishing system design, skilled use methods, systems, etc. which utilize the characteristics of optical disks. 2.4 Lighting Regarding energy conservation technologies for lighting until 2025, we surveyed and investigated white LEDs, organic LEDs, novel light sources and their shared technologies, then developed a roadmap. We also divided lighting equipment into point light sources and surface light sources, and forecast energy conservation effects due to improvement in each method's practical luminous efciency and changes in penetration rates. The forecast for point light sources is a shift from incandescent bulbs (bulb type) uorescent white LED; for surface light sources, mainly a shift from uorescent organic LEDs. With improvements in practical luminous efciency of white LEDs and organic LEDs, the power consumption of all illumination equipment is forecast to fall by half in 2025, compared to 2005. This cut in power consumption will be about 6.3% of Japan's
31

2.

This scal year, due to the recent prominence of global warming issues, the Optoelectronic Technology Roadmap Development Committee established subcommittees concerning the four elds of networks, display, storage and lighting, surveyed trends of technologies which contribute to energy conservation, and created a technology roadmap to 2025. Each eld is summarized below. 2.1 Networks We looked at optical networks, especially in the core/ metro eld and access eld, investigated energy conservation measures using optoelectronics, and developed a technology roadmap (to 2025). We made a model based on power consumption gures for each network element hypothesized in the core/metro eld, and used gures to calculate the entire network's energy conservation. This is strongly inuenced by routers with large power consumption, but it was found that optical network technologies could make large contributions to energy conservation. Also, access networks comprise a large share of all power due to the large number of subscribers. Technology which

Optoelectronic Technology Roadmap Contributing to Energy Conservation

total power consumption in 2005. Converting this into CO2 emissions, this is about 2.5% of Japan's total emissions in the Kyoto Protocol base year 1990, quite a large gure. From the perspectives of global warming problems, energy problems, environmental problems, etc., it is considered important to solidly achieve at least the progress reported here in energy conservation technologies. Agri photonics is technology utilizing articial light in agriculture. This scal year, the Agri Photonics Breakthrough Technology Committee surveyed and discussed its technology trends and future outlook, particularly from the perspective of the relationship of agricultural technology with optoelectronic technology and the optoelectronic industry. Finding efciently and environmentally friendly ways to stably produce plants including grains without regional disparities is one of the technology issues that humans must solve. As one solution for this issue, Agri photonics is closely connected with the recently prominent issues of food, energy, environment, employment, etc., and is considered a theme which will attract increasing attention. As part of this activity, with the aim of introducing cutting edge research results in research institutes such as universities and independent administrative institutions, and broad discussion by industry/ academia/ government on the current state and future of this eld, a conference was held on July 11, 2008 at the Tokyo Kikai Shinko Kaikan 2nd oor basement hall, on the issue of Agri Photonics New Agriculture Pioneered by Light II . On that date, six leaders in this eld provided lectures, and active debate took place after each lecture. It was popular, with about 100 participants. Below is a summary of each lecture. In Analysis of Light Response of Rice, Using Mutants: Makoto Takano (National Institute of Agrobiological Sciences), showed how the photoreceptor function of rice was explained through analysis of the genes and mutant of phytochrome, one of a plant's main photoreceptors. In Growth Adjustment of Horticultural Plant by Light Environment Control Explanation and Application of Physiological Response Mechanism of Plants to Light : Naoya Fukuda (University of Tsukuba), it was reported that a plant's growth process of germination, stem elongation, internode elongation, owering, etc. are controlled by control signals from photoreceptors such as phytochrome and cryptochrome, thus by using LED to illuminate with wavelengths which match the absorption wavelengths of these photoreceptors, one can control the plant's growth process. In Challenge of Plant Cultivation by LED Illumination through Practice of Starting an Enterprise Application of Optical Technology in the Agriculture Sector : Mayuko Iwai (The Graduate School for the Creation of New Photonics Industries / Photo Agri), the following activities were
32

3.

Agri photonics Breakthrough Technology

explained: Photo Agri Co., Ltd. was established, and it prototyped light sources for growth, supplemental lighting, pest control, processing, etc. to meet farmer needs, did experiments on its own farm, etc. In Closed Type Gene Recombination Plant Factory: Takeshi Matsumura (National Institute of Advanced Industrial Science and Technology), for a completely closed type gene recombination plant factory developed as a facility for demonstrating medical product material production by gene recombination plants, this presented an outline of a facility and its capabilities, and results of experiments in cultivating strawberry, rice, potato, etc. In Imaging System for Plant Phenotype Analysis: Takanari Tanabata (National Institute of Agrobiological Sciences), there was a presentation about development of an imaging system utilizing digital image processing technology, comprised of imaging equipment which records images of individual rice seedling growth, and image analysis software which analyzes form and quality from images recorded by imaging equipment. In Extremely Short Time Plant Growth Monitoring by Statistical Interferometry Targeting New Environmental Sensing : Hirofumi Kadono (Center for Environmental Science in Saitama), it was reported that using the new method of statistical interferometry enables observation of plant growth speed in the extremely short time of a few seconds at sub nanometer precision, and slowing and uctuations in plant growth speed due to ozone, which is the main substance of a photochemical oxidant, was conrmed, etc. There are expectations for Silicon photonics as a breakthrough in LSI wiring bottlenecks, and it is also attracting attention for the possibility of contributing to cost reduction and energy conservation in optical disks. Last scal year, a trends survey was done focusing on potential elemental technologies: light sources, transformers, photoreceptors, waveguides, and optical cabling. In contrast this scal year, with the goal of a survey from the perspective of needs as one part of the technology strategy formation project, last scal year's Silicon Photonics Breakthrough Technology Committee was reorganized from the standpoint of industry/ academic/ government cooperation. The committee was launched on October 1, comprised of 11 members and 3 observers from research institutes of companies, universities, and independent administrative institutions. This scal year's committee met a total ve times. It was held the rst time on October 28, and after explanation of the purpose for which it was established, there were reports on North American universities and companies such as MIT, Intel, IBM, Luxtera and Lightwire, global technology trends from ISLC'08 (International Semiconductor Conference), GFP'08 (Group IV Photonics), ECOC'08 (European

4.

Silicon Photonics Breakthrough Technology

Technological Strategy Development

Conference on Optical Communication), etc., and this sector's rapid development was conrmed, in line with the purpose of the committee's establishment. It was held the second and third times on December 15 and 22, and exit scenarios were discussed from the perspective of needs for silicon photonics: telecom, networks, computers, servers, automotive components, household LAN applications, etc. At the fourth held on January 22 and the fth on February 5, in cooperation with activities of COCN (Council on Competitiveness Nippon), Japan's foundry strategy was debated, and demands on Japan's foundries were summarized from a fabless standpoint, with an overseas trends survey report on IMEC (Institute of Micro Electronics Consortium, Belgium), IME (Institute of Micro Electronics, Singapore), etc. Then, OITDA held a forum with the title Second Silicon Photonics Technology Forum Expectations for Silicon Photonics , in the afternoon on February 5 at the Hotel Grand Palace. Talks were given by leading people in various application sectors, providing a place for technology debate to create images of new products utilizing silicon photonics. Strong interest was shown by the participation of approximately 150 people, more than at the rst forum. Dr. Michael Lebby, President & CEO of the USA OIDA (Optoelectronic Industry Development Association) was invited to give a talk on Impact of Silicon Photonics in the USA at this forum. He introduced the latest trends in the USA and Europe, and described the strategic importance of silicon photonics. Next, there were three talks with Kazumi Wada (University of Tokyo) as Chairman. First, Akira Matsuzawa (Tokyo Institute of Technology) gave a talk on Silicon Photonics as a Breakthrough for Wiring Bottlenecks, explaining that wiring delays and power consumption in LSI architecture are problems, and that optical cabling between chips is likely to be adopted rst as a solution. Next, Yuji Nojiri (NHK) gave a talk on Expectations from the Standpoint of Content Creation and Transmission. NHK is doing experiments on uncompressed wavelength multiplex signal transmission and compressed optical IP transmission using optical ber in programming creation and network type programming creation and transmission of SHV (Super Hi Vision), which has presence exceeding HDTV. He described expectations for silicon photonics in the spread of these technologies. Then Hiroshi Ishikawa (AIST) gave a talk on Expectations for Low Power Consumption Very High Capacity Networks. In order to reduce power consumed by internet trafc, which is growing 40% per year, adoption of circuit exchange type

optical path networks which utilize optical switches can achieve three to four orders of magnitude reductions in power consumption, compared with the current IP packet basis. He explained expectations for silicon photonic technologies in development of the large scale optical switches to be used therein. In the second half of the afternoon, Masahiro Aoki (Hitachi) became Chairman, and there were three talks. First, Ken Kanoh (NEC) gave a talk on Expectations from High End User Applications. He described that in high end servers such as high performance computing (HPC) servers and large scale database servers used in scientic technology computation, the large quantity of node connections determine system performance. Inter chip optical connections and intra chip high speed optical cabling push performance even higher, and there are great expectations for silicon photonics technologies there. Also, Manabu Kagami (Toyota Central R&D Labs) gave a talk on Expectations from the Standpoint of Automotive Components, describing that in addition to existing vehicle body networks, control networks, safety networks and information networks, even more applications such as inter vehicle and road vehicle communication networks are being prepared, and that there are strong needs for the appearance of low cost/highly reliable optical devices and systems utilizing silicon photonics technologies, for wider zones, noise resistant environments and lighter weight. Finally, OITDA Chairman Yasuhiko Arakawa (University of Tokyo) gave the Closing Remarks, stating that it was signicant to be able to hear talks from people outside the optoelectronic sector. He stated that beyond silicon photonics as a breakthrough itself, there are expectations for the great impacts it will bring. He described the desire to solidly position this theme in Japan's technology strategy, and hopes for the support of people involved. The above survey results were summarized in the FY2008 Silicon Photonics Breakthrough Technology Survey Report, and distributed to related institutions. Silicon photonics technology not only enhances optical device performance, but there are also expectations for its contributions to energy conservation and environmental protection, thus its stronger promotion is desired.

33

Promotion of Technology Development

1. Development of Next-generation High-efficiency Network Device Technology
higher reliability of an optical I/O, we have studied I/O conguration for redundancy and port-switching method in case of link failure. And for the purpose of demonstration of the method, we have completed to design and assembly optical I/O module which consists of optical transceiver, and control module which consist of FPGA (Field Programmable Gate Array). Furthermore, we have started to implement high reliability function to FPGA (4) LAN/WAN high capacity signal conversion technology We made a presentation at IEICE society conference the results of basic functional evaluations on high speed electrical interface measurement system (SFI-5.2 measurement system) which was developed in 2007. We also made an exhibition at the InterOpt in 2008 for the promotion of the SFI-5.2 interface to the market. A 40 Gb/s class high capacity LANWAN signal conversion LSI was designed based on the results of investigations conducted in 2007. The total gate scale of the LSI is estimated to about 30 Mega gates from the design result. Then, we started the trial fabrication (prototyping) of the LSI. We proposed the multiplexing and accommodation technology of 10 GbE-LAN signals into 40 Gb/s OTN frame to ITU-T international standardization organization Study Group 15. The proposed technology was successfully agreed and adopted as ITU-T G.sup43 document, and was feedback to the design and trial fabrication of the LSI. (5) Ultra-high speed, low-power-consumption SurfaceEmitting Lasers A prototype of a lens-integrated surface-emitting laser operated at 1.3- m wavelength has been demonstrated. The laser consists of an InP lens monolithically integrated with a horizontal-cavity surface-emitting laser, which consists of a conventional stripe cavity and an integrated 45 total reection mirror. A fabricated laser exhibited a narrow, circular far-eld pattern with full-width at half-maximums of 2x 2.5. Successful high speed 10-Gbit/s operation was also conrmed. Furthermore, to realize high speed and low-powerconsumption operation at 25 Gbit/s, short-cavity laser structure was designed. A preparatory prototype of a highspeed laser operated at 25 Gbit/s was demonstrated at the OFC/NFOEC 2009 in cooperation with Kawasaki 1st branch laboratory . (6) Development of high-speed lasers for direct modulation Toward the high-speed directly-modulated lasers with low power consumption, as for the single-mode AlGaInAs laser technology, high-speed direct modulation experiments were performed using the single-mode AlGaInAs lasers with newly-developed cavity structure. The AlGaInAs buried hetero-structure laser with grating-incorporated passive waveguides on both sides of the 100-um-long DFB active region with grating achieved 40-Gbps direct-modulation with a reduced operating current which is about 2/3 of that
34

(1) High speed multiplexer and de-multiplexer circuit technology The purpose of this theme is to realize high speed (40 Gbps) multiplexer and de-multiplexer circuit in optical network interface card (NIC), with less than 1/3 of power consumption of conventional one. In 2008, we developed ICs integrated with some elements circuits using rst IC masks developed in 2007, small package and simple evaluation board, and measured ICs. As a result, we achieved both 40 Gbps operation of multiplexer IC and the targeted power consumption, which is less than 2 W. A technical paper, which summarizes these results, was submitted and presented in ISSCC2009. In addition, to adapt the serial 40 Gb Ethernet that progress the standardization rapidly, we designed the additional circuits corresponding to its function. Moreover, to promote standardization, we developed the optical transceiver test board, on which the ICs and commercial optical devices were implemented, for demonstration purpose. For adapting the optical transceiver module, we will implement all functions including monitor functions, signal generators and related features, so as to improve the operation range in the future. (2) Analogue front-ends for ultra-high speed optical receivers Low power TIA based on the 65-nm CMOS technology process was designed, and the layout design was conducted to realize fully integrated 4ch-TIA arrays. The TIA was designed in regulated cascade topology, and a wider bandwidth was expected. Eye openings at 25 Gbit/s and low power (3.2 mW/Gbit/s) and low noise (3.2 uArms) operation were veried by the circuit simulation, and 25 Gbit/s operation was conrmed experimentally. A front-end subassembly was fabricated together with a PIN-PD developed by the Kokubunj-3rd branch, and a fundamental receiver operation at 25 Gbit/s was obtained. These achievements were demonstrated at OFC/NFOEC 2009 exhibition. In addition, a quadplex-100Gbit/s receiver module, which is composed of a quad ROSA and a DeMux (wavelength separator), was also fabricated as a rst step to the nal integration. The module was also demonstrated at the same place. (3) Optical Transmitter Driver To realize high-speed and low-power consumption device technology and appeal to next generation high-speed Ethernet (40/100 GbE), we have completed circuit design of SiGeBiCMOS 25 Gbps-4channel LDD (Laser Diode Driver) that power consumption is estimated about 10 mw/Gbps, and started test fabrication. This technology was demonstrated in OFC/NFOEC 2009. Furthermore, we have also started to design CMOS 25 Gbps-4channel LDD to reduce power consumption compared to SiGe-BiCMOS process. And we have also completed to design and assembly printed circuit board for LDD performance verication. For discussion of

Promotion of Technology Development

of the conventional DFB laser at room temperature. This shows an effect of the newly-developed cavity structure. Based on the above results, the device designing for lower driving-current operation was carried out. As for the quantum-dot laser technology, the improvement of quantumdot crystal and laser structure for high-speed operation was investigated. Further increase of gain was achieved by the high-density quantum-dots with improved crystal quality. The room-temperature 20-Gbps modulation was also conrmed by the quantum-dot laser with the high-density quantum-dot active layers. (7) Development of high-responsivity optical receiver modules We fabricated a back-illuminated p-i-n photodiode with a high reective reector and a integrated micro-lens. The measured 3 dB-down bandwidth was 37 GHz and the responsivity was 0.75 A/W for 1.3 m light. The goal for the bandwidth (35 GHz) was achieved. The ber alignment tolerance was 10 um which is over three times larger than that (3 um) for a PD without the integrated micro-lens. Furthermore, we fabricated four-channel micro-lens integrated PD array for a compact four-channel receiver module. (8) Technical development of compact and low-power consumption wavelength tunable lasers We have developed a compact and low-power consumption wavelength tunable light source using a technical scheme of silicon external resonators developed last year. The stable wavelengthtunable operations over 35 nm tuning range (i.e.,full C-band range) have been demonstrated with less than 40 mW power consumption per ring resonator, and which is corresponding to the 1/5 of the tuning power consumption of conventional PLC (planer lightwave circuit) resonators using SiON materials. The footprint of the silicon wavelength tunable resonator is 1.2 mm0.7 mm, which is 1/30 of that of conventional SiON PLC resonators. In order to realize not only a stable tuning operation and a size reduction but also an expanding of bandwidth, the silicon wire-waveguides have been used to the fabricated tunable resonators. As a result, the FSR (Free spectrum range) of the external resonators has become 2.5times larger than that of Si tunable resonators pre-fabricated last year, which is 630 GHz, and the stable tunable operations without gridhopping have been obtained. The threshold current, ber coupled optical output power at 100 mA current injection and the side-mode suppression ratio (SMSR) for the developed tunable lasers are 30 mA, 1 mW, and over 30 dB, respectively. Moreover, we have also studied the passive alignment mounting scheme for the hybrid integration of SOA (semiconductor optical amplier) and silicon tunable resonators, and nished the fundamental design of the silicon mounting stage on SOI (silicon on insulator) substrate. (9) Development of highly efcient semiconductor optical ampliers We have been developing a quantum dot semiconductor
35

optical amplier (QD-SOA) with high efciency and high temperature operability for OTDM-NICs in LAN-SAN systems. In FY 2008, we investigated an active layer structure of the QD-SOA to increase its gain at high temperature. Increasing the number of the columnar quantum dot layers from one to two doubled the optical connenment factor of the quntum dots. Consequently we achieved a high gain of > 20dB at the high temperature of 50 with the QD-SOA. As a next step, we aim to demonstrate distortion free amplication of signals modulated in 40 Gbps NRZ format at the temperature of 50. (10) Wavelength converter with wide dynamic range Target is to develop a wavelength converter, which is independent of input-signal power level. For this purpose, we design and fabricate a wavelength converter integrated with a photo-diode (PD) which monitors output signal level of wavelength converter in 2008. We conrmed that the PD observes its monitor level in conjunction with the wavelengthconverted output signal level. 2. Other achievements In FY2008, 40 papers were presented at academic international/domestic conferences and 8 patents applications were submitted to the Japan Patent Ofce (JPO). And to exhibit the results of research widely, 8 press-releases and 2 show-exhibitions have been carried out.

2.

The Nano-mastering Technology Development for Terabyte Storage" is a project the New Energy Development Organization (NEDO) and Optoelectronic Industry and Technology Development Association (OITDA) agreed to conduct collaboratively in FY 2007 to develop practical use of nano-mastering technology to manufacture master disks and stampers (metal molds) for ultra-high density, largecapacity storage of 300 Gb/in2 to 1 Tb/in2 levels, with the aim of opening up commercial applications for the 1 Tb/in2 level element technology developed in a project Terabyte Optical Storage Technology" completed in FY 2006, and establishing technology to optimize manufacturing conditions for master disks and stampers according to required specications through external evaluations to ensure the manufacture of product-quality master disks and stampers. It is a three-year project starting in FY 2007 and ending in FY 2009. In this project, the OITDA is responsible for the research and development of technologies, and recruits researchers from three enterprises in the Optical Storage Project set up in the OITDA. The project focuses on two topics: (1) Commercialization of nano-mastering technologies for optical disks of 300 Gb/in2 and (2) Commercialization of nano-mastering technologies for hard disks (HDD) of 500 Gb/in2 to 1 Tb/in2. With the advancement of information society, stored information (digital memory) is rapidly increasing, and the

Nano-Mastering Technology Development for Terabyte Storage

demand for storage devices, such as optical disks and hard disks (HDD), is expected to increase dramatically, increasing the total power required for operating these devices. Therefore, it is important to nd out ways to limit the total power consumption for the continued advancement of information society and energy saving, without restricting the volume of stored information. The objectives of this technological development project are to increase the density of information storage devices and the storage capacity of individual devices at a rate exceeding the present trend for improving energy efciency, and save 88,000 Kl/year of energy in FY 2012 in terms of oil, with an assumption of 1/3 success rate, through the commercialization of the technologies developed in this project in FY 2011. For (1) Commercialization of nano-mastering technology for optical disks of 300 Gb/in2, the nano-mastering equipment and formatter system are developed as technologies for creating prototype master optical disks and the associated stampers using this equipment and system. The technologies developed will be made commercially viable through external evaluations. For (2) Commercialization of nanomastering technology for hard disks (HDD) of 500 Gb/in2 to 1 Tb/in2, the corresponding nano-mastering equipment and formatter system technologies are developed as technologies for creating prototype master hard disks and the associated stampers using this equipment and system, and the technologies developed will be made commercially viable through external evaluations. Figure 1 shows relationships of these technologies, and Figure 2 the forms of high performance disks and the ow of establishment of universal technologies through external evaluations to new market creation. This scal year is the middle year of the project. Based on last scal year's results (the operation of electronic beam imaging equipment, prototyping of stampers through all processes, identication of R&D issues, and sample production of 80 Gb/in2 devices), the project progressed towards the targets of developing nanomastering technology of 140Gb/in2 for optical disks, and 500Gb/in2 for HDD. It received a very favorable evaluation from the NEDO Energy Use Rationalization Technology Strategic Development & Next Generation Energy Conserving Device Technology Committee held on January 20, 2009. For external evaluations, discussions are also being held with optical disk and HDD related companies.

3.

The Development of New Functional Nanophotonic Devices" project was consigned by NEDO to OITDA in FY 2006. The purpose is to create new materials that exceed the performance of conventional optical components, aiming at achievement of low optical loss new functional material that uses the optical near-eld as the principle of operation. The goal is to demonstrate transmittance of 75% and extinction
36

Development of Low Optical Loss New Functional Materials

ratio of 1:2000 (33 dB) in each wavelength area of red, blue, and green, for a low-loss polarization control material using the nano-structure by FY2010. In addition, we will investigate optical logic gate and optical near-eld waveguide technologies as the nano-structural material optical new functional application technology and conrm the function. Accordingly, the Nanophotonics Project was set up in OITDA and researchers from six enterprises and three universities were gathered. With Prof. Motoichi Ohtsu of the University of Tokyo serving as the R&D chief, the researchers are working on two topics: (1) Optical near-eld basic technology and (2) Optical near-eld media technology. In this project, joint research between the University of Tokyo, Tokyo Institute of Technology, and Tokyo National College of Technology is being carried out to develop new functional materials indispensable for the information equipment and consumer electronic elds with vertical cooperation of upstream (science), midstream (technology), and downstream (product), to contribute to strengthening the competitiveness of downstream industries. Figure 1 shows the promotion system for this project. Optical near-eld is a non-propagating electromagnetic eld, which is generated on the surface of nano-size substances. In nanophotonics, the excitation energy movement that occurs through this optical near-eld is used for measurement, generation of the optical device function, microfabrication, etc. Nanophotonics revolutionizes the optical technology qualitatively and quantitatively beyond the limit of optical diffraction, which has not been exceeded up to now. The R&D themes of basic technologies are shared by the science and technology in the upstream as common basic technologies, for designing, fabricating and evaluating nanostructure materials, and conrming the function of new optical functional materials that operate based on the optical near-eld function generated in nanostructure materials. To support R&D, basic technologies for simulation, nanofabrication for creating nanostructures, and evaluations are developed. Additionally, potential applications of the developed basic technologies to new optical functional materials are investigated. With regard to the R&D theme of polarization control material using nanostructure, low loss polarization materials were developed in FY2010 using the characteristics of optical near-eld in nano areas. The materials achieve a transmittance more than 75% and extinction ratio of 1:2000 (33 dB) in each wavelength area of red, blue, and green. To support the development of materials, technologies for designing and fabricating polarization control materials have been developed. Figure 2 shows the optical system of a projector using low optical loss control materials. This scal year is the middle year of the project, and each research group set a milestone and proceeded with its R&D. Consequently, both FY 2008 year end interim targets were

Promotion of Technology Development

Figure 1 Project Targe

Figure 2 Project Scope

achieved: For low loss polarization control materials using nanostructure, develop each element technology to enable at least a 60% transmission ratio (light energy efciency) by FY 2008" and Investigate application of nanostructure new function parts and materials with near-eld light as signal carrier, and clarify function and structure by FY 2008." These also received favorable NEDO interim evaluations on November 28, 2008. Major results of this project so far are explained in the subsequent sections. 3.1 Development of Basic Technology At The University of Tokyo with which joint research is being done, we presented the structure of Z-shape, asymmetric rectangular shape, italic I shape, etc. which exceed the 75%*1) target transmission ratio by FDTD simulation, for the red/green/blue wavelength bands. It was shown that 33dB extinction ratio can be attained in combination with a wire grid polarizer,
37

etc. Next, we used nonadiabatic near-eld lithography to make an asymmetric rectangular shaped polarizer, and showed performance at our nal target 75% transmission ratio in the red band. We also made an italic shaped polarizer, and obtained 60% or higher transmission ratios, which exceeds the previous theoretical limit of 50%. We conrmed the energy transfer between created InAs quantum dots, and showed a design diagram for an optical logic gate. We also experimentally showed the optimal structure in an output terminal of the optical logic gate. *1) Polarization conversion efciency is dened as follows. When 45 direction linearly polarized light is emitted into a prototype element, the ratio of (transmission light intensity of 0 direction linearly polarized light or 90 direction linearly polarized light) divided by the (incident light intensity).

System

Product

New Applications Optical Logic Circuit Nanophotonic Waveguide

Polarizing Components Nanophotonics Components Development Organization

Technology
(Basic Technology Development)

Tokyo Institute of Technology Tokyo National College of Technology

Science
Basic Technology Research The University of Tokyo

Figure 3 Development Scheme

Figure 4 LED Projector Optics

We developed simulation technology fusing near-eld light bands with propagation light band, and worked on higher efciency simulation techniques. This claried effects on propagation strength at the observation point according to the existence/degree of diffraction in the propagation light band, and also enabled application of genetic algorithms in the FDTD technique. Based on this, we analyzed characteristics of the polarization control material proposed by the Fundamentals Group. We investigated 2D and 3D nano structure compatible material manufacturing technologies, such as minute particle diameter metal lm manufacturing technology, EB exposure technology, RIE technology, FIB processing technology, and pattern plating technology. We prototyped an Italic I-shaped Al polarizer with over 60% transmission ratio. We investigated
38

composite semiconductor InAs quantum dot manufacturing technology using MBE technology, and observed strong PL emission at room temperature. We secured approximately 100nm spatial resolution with functional lm applied tip enhanced Raman dispersion and tip enhanced emission, and obtained experimental results which suggest even higher spatial resolution by tip enhanced Rayleigh scattering method. We lled carbon nanotubes (CNT) with 4nm diameter metal nanoparticles, and devised a light probe which uses plasmon propagated irradiation to output near-eld light. We used theoretical calculations to conrm that in 886 nm wavelengths, 4nm light spots can be obtained at CNT tips. We devised an optical logic gate structure using

Promotion of Technology Development

semiconductor quantum dots, prototyped a basic structure, conrmed logic operation at 77k, and conrmed the possibility of higher operating temperatures. We also investigated processing methods which hypothesized material structure. We investigated a nanoparticle dispersion type waveguide, conrmed its function in simulation, and investigated a material processing technique. We also developed a nanoparticle material, and conrmed plasmon waveguide by under 10nm diameter metal Ag nanoparticles with Sn seed method. We proposed a structure considering practical application of a conversion element for propagation light and near-eld light, and conrmed its function in simulation. We also investigated processing element technology for the part converting propagation light and near-eld light, and attained processing of waveguide tips. 3.2 Development of Polarization Control Materials Using Nanostructures As simulation technology for optimal design of low loss polarization control material, composition & structure, dimensions, etc., a calculation method for integrating metal nanostructures was investigated with the characteristics of polarization control materials

through an analytical approach of approximation using an electric dipole polarization model, which showed that there is a phase assignment function in the metal nanostructure. Furthermore, we obtained our aim for optical characteristics calculation in the local region and large surface structure. Based on this, we veried basic principles of the metal nanodots, and conrmed consistency with simulation of phase change volume, transmission change, and degree of polarization. As development of technology for manufacturing polarization control material using nanostructure, we investigated metal nanostructure processing techniques such as metal lm manufacturing technology, FIB processing technology, electron beam exposure lithography technology, RIE technology and material technology, introduced and operated required nanostructure manufacturing devices, and performed trial manufacture with these devices. We evaluated the optical characteristics of the prototype sample, and conrmed a phase assignment function (phase change of 50 or more) by metal nanostructure. We also started investigating basic technology for larger surfaces which enable element prototyping of several mm or larger practical size.

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Founding New Types of Business

The OITDA has been taking action in FY 2008 in each of the following three categories in order to actively create and foster new types of business related to the optoelectronic industry: These activities were subsidized by JKA through its Promotion funds from KEIRIN RACE. Technical advisory institution 77 advisory activities were carried out under the technical adviser institution giving technical guidance in response to consultations and questions from ventures and small and medium companies involved in the eld of optics. New business support 15 Companies placed exhibits in the Noteworthy Optical Technology and Special Exhibition Zone, and 14 Companies gave lecture support to Noteworthy Optical Technology Seminars during InterOpto 08 this scal year. Development project Every year, the OITDA solicits enterprises interested in the development of units, equipment, or systems utilizing optoelectronic technology to apply to the support program for new development projects. This year, three projects were accepted. Support and evaluation was provided to these new projects, and for three projects completed last scal year, on which testing/evaluation is being done.

1.

Introduction

2.2 Information Disclosure With the consent of both consulters and advisors the OITDA has introduced, on its web site, consultations which were of general nature and for which disclosure is expected to be advantageous to other people. The site contains technical consultations (43 instances) from FY 2007 and 19 consultation / advice case studies which are related to safety of laser and whose disclosure are expected to be advantageous to others, as well as the technical consultations from the previous year (FY 2006). 2.3 Features of Technical Consultations There were 77 cases in total using this consultation system or considered to be related to the consultation, an increase of 68 cases from the previous scal year. Of these, 46 were handled by advisors selected under this institution. The remaining 31 were treated by the OITDA ofce. The consultations can be roughly categorized as follows: 58 cases for lasers (laser processing equipment 4, laser measuring instruments 20, laser for display 5, other lasers 29), 12 cases for LED, optical storage 2, new market creation 3, biomedical optics 1, solar radiation and eye safety 1 51 companies requested consultations this scal year, and many used the system multiple times. The institute can be said to be an easy-to-use and effective system. As has happened in the past, many consultations are related to safety of laser. Laser and LED were separated in the revisions of International Standards for Laser Safety IEC60825-1 in Year 2007, while discussions are still being held with regards to other standards of the 60825 series. Moreover, LED has been incorporated in the domestic standard JIS C 6802 (last revised in Year 2005). Measures to Prevent Hazards due to Laser Light of the Ministry of Health, Labour and Welfare refers to the latest JIS, but the provisions for mobile laser devices based on the Consumer Product Safety Law of the (former) Ministry of International Trade and Industry (currently the Ministry of Economy, Trade, and Industry) refer to the old JIS. These are only some examples of the issues causing confusion, which may be the reason there were so many consultations this year. OITDA will simultaneously pursue two different missions; working diligently to standardize safety of lasers, and providing consultation to those seeking advice.

2.

This institution is operated with the aim of supporting the establishment of new businesses related to optoelectronic technologies, and introduces a technical advisor to handle consultations and questions from ventures and small and medium companies related to optics, providing advice. The areas covered by this institution are not limited to new businesses but also include technical advice for new product development and marketing. The majority of technical advisors are university professors, but people from the private sector have also been asked to join to cover all areas of optoelectronic technologies. 2.1 Implementation Method A check is made to verify that the issue/items brought in for consultation match the intent of this institution. Once it is determined that the institution can be of assistance, the most suitable advisors are selected according to their areas of expertise and requested (with the consulters consent) to give advice to the consulter. The OITDA maintains strict condentiality on consultations. If the consulter requests it, the OITDA will enter into a nondisclosure agreement.In FY 2008, one consultation fell into this category.

Technical Advisory Institution

3.

Lectures and assistance was provided through Noteworthy optical technology and special exhibition zone and Noteworthy optical technology seminars during InterOpto 08 for small and medium companies and venture enterprises (including ventures launched from Universities, etc.) that are involved in research, development, manufacture and sale of optical equipment or systems in which optical technology is applied. Implementation status is given in Table 1.
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Support of New Business Initiatives

Founding New Types of Business

This was formally called the Development Project for Optoelectronic Technology Applied Equipment, Devices and Systems, subsidized by JKA, and operated by OITDA. Topics that meet the following conditions are selected: Equipment, devices and systems using optoelectronic technologies expected to be commercialized, and demonstrating feasibility and future applicability of optoelectronic technologies through the development, trial, testing and evaluation of these equipment, devices and systems. In practice, OITDA invites public participation to propose development themes mainly with an eye on venture enterprises and small and medium companies at the beginning of every scal year. Submitted proposals are delivered to the Development Project Examination and Assessment Committee of the OITDA as candidates for the development theme. The committee interviews the applicants before determining the development theme. The committee is composed of technical specialists, people having insight on investments, and people knowledgeable about management and nance for in-depth examination of the proposals from the perspectives of (1) Technological novelty, (2) Contribution to optoelectronic industry market, (3) Contribution to society, (4) Credibility of the plan to incorporate the project results into business, and (5) Industryacademy-cooperation. At present, the project normally proceeds from

4.

Development Project

development and trial manufacture to trial and evaluation. The group implementing the project produces a prototype system or equipment during the development and trial manufacture phase (nine months in the rst year), and consigns the prototype to the test user appointed in advance during the trial and evaluation phase (one year in the second year). The test user makes a third-party evaluation of the advantages and drawbacks of the prototype from the viewpoint of commercialization. In this way the prospects for commercialization, or at least methods to lead to commercialization, are identied at the end of the second phase. The Development Project Examination and Assessment Committee reviews the basic plans at the beginning of the scal year, as well as the mid-term progress reports, and result reports at the end of the scal year submitted from all projects, so that the committee members can provide relevant advice to the groups running the projects. The three projects listed in the Development promotion phase in Table 2 were selected this scal year. These three projects and another three projects selected in the previous year, (which completed the development promotion phase the rst year, and have entered the trial and evaluation phase in the second year), are being operated at present. For the three projects in the trial and evaluation phase, the prototypes were exhibited at InterOpto 08 held in September 2008 in order to advertise the development project and the outcomes.

Table 1 Noteworthy optical technology and special exhibition zone and Noteworthy optical technology seminars
Exhibitor WATANABE CO.,LTD. HIKIFUNE CO., LTD. NARA INSTITUTE OF SCIENCE AND TECHNOLOGY JAPAN WOMEN S UNIVERSITY & Photonic System Solutions Inc. E-LAMBDANET CORPORATION Brainvision Inc. OPTO-DEVICE CO., LTD. GEO-SYSTEM CO.,LTD. PULSTEC INDUSTRIAL CO., LTD. OPTO DESIGN,INC. CCS INC. Exhibition contents A Novel Optical Fiber Interrogating System : DWPR Plating is Possible to a glass ber nalysis of Silicon Solar Cell Performance Utilizing Electroluminescence Optical parallell correlator ,High Speed Image Search Engine Optical Local Area Network System and Devices for High Denition Video Transmission Optical recording system of biological activity Apploed Products of Reection type power LED Advertising effect measurement system Nano-scale thermal lithography system with rotating spindle Usage of High Luminance LED for the at lighting technology Light for cultivation plants including agricultural products. Lecture Theme A Novel Optical Fiber Interrogating SystemPush-pull ratiometric Reectometry based on PNCR Analysis of Silicon Solar Cell Performance Utilizing Electroluminescence Video&image search system by Ultrahigh-speed optical correlation and its application Optical Local Area Network System and Devices for High Denition Video Transmission Optical recording of biological activity in brain or heart Reection type power LED and the application Advertising effect measurement system Features and future prospects of NEO series nanoscale thermal lithography system with rotating spindle Usage of High Luminance LED for the at lighting technology Caces of LED application to the lighting for cultivation plants including agricultural products.

Tokyo Institute of Technology & Electra New energy cycle by Sunlight Laser and Magnesium Save the Earth by Sunlight Laser and Magnesium Co.Ltd. Ultrashort laser scribing of thin glass substrates for at CYBER LASER INC. Femtosecond Laser Bases High Speed Glass Scriber panel displays manufacturing Introduction of High-Speed Optical Control TRIMATIZ LIMITED High-speed VOALevel ControllerEDFA Technologies and our products. Embedded optical interconnects on printed circuit Optical Interconnection: a New Market Empowered ADVANCED PHOTONICS, INC. board -attainment of 80Gps by Open Innovation

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The three projects in the development promotion phase completed the rst year successfully with signicant results, suggesting fruitful development in the second year. In addition, the three projects in the trial and evaluation phase completed the second year with promising prospect, although further efforts and demonstrations will be required for effectively incorporating the outcomes of research and development to market-oriented products. Details of the progress of each project are described in Table 2.
Table 2 Development Projects Carried Out in FY 2008
Project Development of optical transmission equipment for measuring 18 GHz EMC Development of an electrolytic Development and capacitor-less drive circuit for tnial mannfacture LED lighting Development of equipment for measuring the minute aspheric optical elements using shearing interference Trial and Evaluation of Spectrum Controllable Filter based on Spatial Light Modulation Trial and Evaluation of Ultraviolet Trial use and Laser Light Processing Optical evaluation System Trial and Evaluation of Highluminance Coagulation System Using SMF Phase Project Implementer Sumitomo Osaka Cement Co. Ltd. Takion Co., Ltd. Natsume Optical Corporation santec Corporation Seiwa Co.,Ltd. Optical

Table 3 List of Prototype Performance

Parameter Operating Frequency Range Maximum Fiber Length RF Gain Signal-to-Noise ratio Frequency Response Output Power Stability Input/Output Impedance Dynamic Range IM2/IM3 Unit GHz m dB dB dBp-p dBp-p Ohms dB dBc Measured Target spec. 1 to 18 30 > 37 10 4 0.05 50 > 50 < -40 1 to 18 30 > 10 > 10 <6 < 0.2 50 > 30 < -40 Input power < -40 dBm Input power = -87 dBm (RBW = 1 MHz) 1 to 18 GHz Measurement time = 30 min Conditions

4.1.3 Items developed during the contract period and their details Refer to Table 3 4.1.4 Results attained during contract period that must be specifically mentioned Test models satisfying the initial target specications were made by adopting the LN modulator for 40 Gbps digital communication that is currently under development, in combination with commercially available devices. In the case of this modulator, it is believed that low voltage drive is possible in wideband using our company s specic technology, and at frequency characteristic can be achieved by having a mechanism to suppress the low region frequency ripple. 4.1.5 Application for intellectual property rights and its acquisition status An application for patent related to remote control system for LN modulator was led during the contract period of this scal year.
Title Appl. No. Optical transmission apparatus for 2008-303106 electrical elds measurement Inventors Norikazu Miyazaki, Takeshi Sakai

Nidek Co., Ltd.

4.1 Development of optical transmission equipment for measuring 18 GHz EMC Project Implementer: Sumitomo Osaka Cement Co. Ltd. 4.1.1 Aim and target results of initially scheduled development The aim of the initially scheduled development was commercialization of optical transmission equipment for measuring 18 GHz EMC by achieving high frequency detection signals and expanding the transmission range by using optoelectric conversion technology and optical cable transmission technology in place of the conventional coaxial cable, and contribute toward technical examination for achieving the next generation EMC measuring system and establishing the standards. The target for this scal year is the trial manufacture of optical transmission equipment for EMC using commercially available devices. 4.1.2 Results achieved during the contract period Parameters for satisfying the target specications were selected for various devices and trial manufactures and evaluations of the optical transmission device for 18 GHz EMC were carried out, and it was conrmed that the target specications were satised.
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4.1.6 Problems that occurred during the period and their solutions Problems that occurred during the period and their solutions are given in the two points below. (1) RF output stability RF output stability is an important parameter in EMC measuring optical transmission devices, and has a big effect on the accuracy of measured values. As a result of theoretically researching the degradation mechanism of RF

Founding New Types of Business

output stability in the optical transmission equipment that has been proposed currently, it was ascertained that polarized crosstalk following the misalignment of the polarization axes of optical connectors was a major factor. Consequently, setting the polarization axes of optical connectors with high accuracy (3or less) resulted in average 0.07 dB and standard deviation: 0.04 dB, obtaining the prospect of achieving the average target specication of 0.2 dB or less. (2) Low noise The SN ratio of the test models has not stayed in the margins that would satisfy the target specications, and as such there is a pressing need to examine how to keep the noise down. The following is necessary to achieve low noise: (1) Increase the received optical power and (2) Decrease the half-wave length voltage of LN modulator. In case of (1), noise gure improvement by increasing received optical power is already +3 dBm, thus this is already close to the limit. On the other hand, in case of (2), approximately 5 dB improvement can be expected in the noise gure if the halfwave length voltage of LN modulator is reduced from 4 V to 3 V, which is a very large result. The currently used modulator has been designed for digital communication, and the half-wave length voltage of the LN modulator can be reduced by selecting design parameters optimized for EMC application. (3) Finalizing the specications Specications in accordance with the standards for up to 6 GHz have been set as the target values for the development of the test model for this scal year. However, although it is necessary to nalize the product specications to advance commercialization, the international standards concerning EMC measurement up to 18 GHz (which is the target of this product) are in a chaotic state. Therefore, it has been decided to nalize the product specications at an early stage, by improving the perfection of the product through trials and evaluations in the next scal year, and offering the data obtained from the trial and evaluation stage for international standardization and getting feedback. (4) Cost reduction In the present development, it was found that the initially set target specications can be satised by using commercially available ampliers that have superior at frequency characteristics. However, ampliers having good characteristics are expensive, and device cost is an issue. In normal optical communication, it is said that the device cost is proportional to the square root of the transmission band (device cost is double for 4 band transmission). If we postulate this rule of thumb, the target cost of an 18 GHz supporting product will be approximately 1.5 times that of a 6 GHz supporting product. Therefore, cost reduction is being worked on by using the high frequency simulators introduced this scal year, implementing at chip level, etc.
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4.1.7 Plans after project completion and future outlook The aim is to verify the EMC measurement method up to 18 GHz by using the resulting product of this project and contribute to the international standards by offering valuable data for formulating the international standards related to EMC, and also contribute to commercialization and early launch of this developed product for the 18 GHz EMC measurement market. It shall especially focus on achieving perfection in the test model and bringing it into practical use, as this is considered important for expediting critical technical examinations for promoting international standardization activity such as CISPR, etc. It shall also contribute towards establishment of international standards, by disclosing trial evaluation results and technical information and ndings obtained in this development, providing information directly to the members of the internal committee for international standardization, and also cooperating in technical examinations using the test model. It is believed that the wideband impedance matching technology of optical circuits and electrical circuits which is expected from this project can be applied in the following applications. i) Super-high vision signal transmission using 21 GHz band ii) Transmission of ultra-wide band (UWB) wireless signals iii) Application in disaster use wireless systems such as radio on ber (ROF) systems 4.2 Development of an electrolytic capacitor-less drive circuit for LED lighting Project Implementer: Takion Co., Ltd. 4.2.1 Development Objective Lighting comprises about 19% of all global electric power consumption on average. This is about 18% in Japan. If we consider the same quantity of light, then the power consumption of LED lighting is approximately 20% less than that of compact uorescent lamp. If we compare LED lighting with the method of combined use of an incandescent lamp and a uorescent lamp, then we can expect an approximately 40% reduction in power consumption. At the same time, LED itself has excellent longevity. However, the life of the electrolytic capacitors used in LED power circuits is affected by received heat, so the life of an LED lamp is determined not by the LED itself, but by the life of the electrolytic capacitors. The objectives of this project are to develop an LED drive method and LSI that do not require an electrolytic capacitor, and to realize truly longer lasting LED lighting. With the spread of these LED lighting, we are aiming to contribute towards achieving reduction in CO2 emissions on a domestic level.

Figure 1 The Block Diagram

4.2.2 Outline of development The block diagram is shown in Figure 1. The LED is driven by pulses in waveform, only when the input voltage cycle monitoring-circuit detects a full-wave rectication voltage greater than a threshold. Instead of electrolytic capacitors for smoothing, low-capacity ceramic capacitors C3 and C4 are arranged for surge absorption and switching noise suppression. In this method, the LED driving current is a pulse in waveform. Therefore the peak current becomes greater than the effective current in inverse proportion to its duty, and to the human eye the brightness appears to the 1.2-1.5 times that of a direct current drive. In another words, 20-50% reduction in power consumption is possible with no loss in perceived brightness, depending on the peak value of the drive current and its duty The biggest advantage of this method is longevity: since electrolytic capacitors are not used, the life of power circuit using this LSI is expected to be almost double that of one using the conventional method. Moreover, since drive MOS transistors and other protection circuits are also incorporated in this LSI, it is almost half the volume of a conventional one. 4.2.3 Status of Development This scal year saw the completion of development of LED drive LSI which was the focus of development, drive
44

circuits equipped with this LSI, LED modules, and trial manufacture of bulb shaped LED lamp that will be evaluated next scal year. And, since excellent heat release characteristic was obtained by trial manufacture of LED lamp, the targeted total luminous ux of the lamp was changed to 260 lm, and the target power consumption of the lamp was changed to 6.2W. These and almost all other target specications were achieved. However, the biggest characteristic (longevity) has not been evaluated. Life tests of the LSI itself are scheduled to start from April, and life tests of the lamp are scheduled to start from June. 4.3 Development of equipment for measuring the minute aspheric optical elements using shearing interference 4.3.1 Development commission Project Implementer: Natsume Optical Corporation 4.3.2 Background of Development and Objective Following the changes in market needs with relation to high functionality, diversication and miniaturization of optical equipment, and improvements in lens processing technology, there has been a change in the shape of lenses from spherical to aspheric and further to free-form surfaces, and the sizes of lenses have also reduced from several mm to sub-mm. On the other hand, it is difcult to measure or inspect the surface shape of minute aspheric lenses using 3 dimensional shape measurement devices that use conventional

Founding New Types of Business

light interference method, so there is no inspection equipment that can be used on processing sites. Moreover, following the miniaturization of lenses, measurement of focal length and measurement of decentration has also become difcult. Consequently, the objective of this development is to develop an optical element measuring equipment that can measure the surface shape of minute aspheric lenses and minute cylindrical lenses, and can measure the curvature of minute lenses, spherical degree, and focal length of the lens as well as measure the decentration of the lens, and which can be used in place of the 3 dimensional shape measuring equipment using a conventional interference method. 4.3.3 Outline of development One of technical features of the developed device is shearing interference. The shearing interference is an interferometer that creates interference between the wave surface that is to be measured, and a wave surface that is slightly away from that wave surface. In the developed device, reections of front and back surfaces are used in order to use the lateral shear that moves the wave surface laterally. Shearing interferometer is a common optical path interferometer and is strong in vibration and air uctuations. In a Fizeau Interferometer that is used in conventional optical interferometer measuring devices, a prototype standard that matches the shape of the measuring plane is necessary, and multiple prototype standards have to be prepared if various shapes are to be measured. The accuracy of the prototype standard greatly inuences the accuracy of measurement. However, the advantage of a shearing interferometer is that the measuring plan itself is measured as the datum plan making a prototype standard redundant. Moreover, in case of this device, both the shearing interference of the reected light of the lens surface and the shearing interference of the transmitted light of the lens can be measured by a single device. Therefore, by combining these two measurements, multiple functions can be examined such as lens surface shape & curvature, focal length and eccentricity of the lens. 4.3.4 Status of Development Performance of a convex prototype standard with 3 mm external diameter / 2 mm radius of curvature, and a concave prototype standard with 3 mm external diameter / 2 mm

radius of curvature were evaluated by a device which was trial manufactured. Since the external diameter of these prototype standards was small, it was difcult to measure these with a conventional Fizeau Interferometer, but it was possible to measure with the interferometer that was made for trial purposes, thus conrming that this interferometer is suitable for measuring minute optical elements. Since the shear of this shearing interferometer is as small as few tens of m, minute lenses up to about 0.5 mm can be measured with this interferometer. Moreover, various lens shapes such as spherical, aspheric and cylindrical, etc. can be evaluated, and it was conrmed that measurements can be taken without using prototype standards. Since this experimental device has been conrmed to be strong in uctuating vibration and air, it can be used on common work benches and is very suitable for use in lens manufacturing sites. The comparison of target performance and the performance of the prototype has been given in Table 4. Although accuracy has not been achieved from among the target performances, it has been conrmed that noise is an inuencing factor and it is believed that accuracy will improve when the software for removing noise is completed. Moreover, it is also believed that accuracy is affected by the parallelism and surface accuracy of the shear plates and as such it is estimated that further improvement can be achieved by using higher quality shear plates. In order to improve the accuracy, the aim for next scal year is to improve the interference fringe analysis algorithms and software which are believed to be effective in reducing noise, and to extract problems by trials and evaluations so that these algorithms and software can be put to practical use in the products.

Table 4 The comparison of target performance and the performance of the prototype
The surface shape The radius of curvature Measurement range Measurement accuracy Target performance A. minute lens: planar, spherical, aspheric B. cylindrical lens: the section is sphere and aspheric Concave type20 mm, Convex type55 0.5 mm30 mm 50100 Performance of the prototype A. accomplishment of target B. accomplishment of target Concave type8 mm, Convex type35 (accomplishment of target) 0.5 mm30 mm (accomplishment of target) 20

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4.4 Trial and Evaluation of Spectrum Controllable Filter based on Spatial Light Modulation 4.4.1 Project Implementer Project Implementer: Santec Corporation. Trial and Evaluation by: Tokyo Institute of Technology, Professor Koyama Osaka University, Associate Professor Murata 4.4.2 Objective of Trial and Evaluation A new optical variable lter with passband width variable function was developed in FY 2007 with the aim of achieving a photometer that is more efcient in evaluating optical communication systems. The sale of this developed product (Figure 2: Product Name OTF-950) began in November 2007, and a total of 47 lters have been shipped as of March 2009. Interviews related to trial and evaluation from users of this product were also held in FY 2008, in order to extract performance improvement items so that a more practical device can be made. Moreover, new needs were also obtained by evaluating high speed optical transmission systems in cooperation with universities and research institutes, and by visiting academic conferences, exhibitions and customers. 4.4.3 Outline of Trials and Evaluations There were 0 complaints or breakdown reports from users to which these were delivered, and it seems there were no problems in operations during trials. Most of the requests for improvements evident in the interviews were related to the following 4 items: (1) Reduction in wavelength dispersion in case of narrow line width, (2) Miniaturization, (3) Addition of peak search function depending on power monitor, (4) Improvement in operability. The most common requests were related to (4) Operability. With regards to the evaluation of high speed optical transmission systems in cooperation with universities and research institutes, it was decided to develop passband width/ wavelength variable lters without actuators for high speed transmission systems, under the guidance of Professor

Koyama of Tokyo Institute of Technology. Prototypes were made after receiving new needs and requirements for tunable edge lters for suppressing sidebands of phase modulation transmission systems that were found by Associate Professor Murata of Osaka University during customer visits, and currently these prototypes are in the evaluation stage. Dynamic demonstrations and trial manufacture of notch lters in which intercepting bandwidth and wavelength can be changed were carried out in InterOpto 08 and ECOC 2008 exhibitions, and it was conrmed that there are users for these applications also. 4.4.4 Response to Trials and Evaluations Improvements and trial manufactures were carried out after obtaining the results of the above trials and evaluations and the following characteristics were realized. (1) Notch lters in which intercepting bandwidth and wavelength can be changed were manufactured for trial purposes and performances of 0.18 - 6.5 nm and 40 nm were achieved by changing the intercepting bandwidth and wavelength respectively. (2) A tunable edge lter for suppressing the sideband of high speed phase modulation signal was manufactured for trial purpose, and cross talk of 53 dB and steep lter edge characteristic with edge slope > 106 dB/nm were achieved. Currently, this lter is in the evaluation stage. On another front, the following independent developments were also advanced from results of previous developments, sales, and trials and evaluations by users. (3) Wavelength / passband width variable lters consisting of Littman spectrum arrangement made up of diffraction grating, lens and movable reecting mirror were developed in order to contract the passband width. When the current collimator beam diameter (3.5 mm) was compared with the previous (2.2 mm), it was conrmed that line width can be narrowed down to 0.15 nm without increasing the excessive loss from the minimum value of 0.25 nm (past) for 3 dB bandwidth. (4) Replacing the conventional step motor with liquid crystal elements is being examined with the aims of improved reliability and miniaturization. The number of liquid crystal elements currently used in trial manufacture, their number of pixels, size and pitch are 2560 pixels, 4.7 m and 5.0 m respectively, and it was conrmed that the voltage of each pixel electrode can be controlled and arbitrary spectrum shapes can be formed. 4.4.5 Plans after project completion and future outlook Work towards improving the performance of the manufactured passband width/wavelength variable lters (Product Name: OTF-950) on the basis of the feedback from existing customers and sales activities, and aim at adopting this passband width/wavelength variable lter in production
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Figure 2 Developed product OTF-950

Founding New Types of Business

areas of optical communication parts and transmission system manufacturers which constitute a large market for photometers, pursuing user-friendliness and low cost. Also, give active dynamic demonstrations of the prototype in exhibitions, academic conferences and visits to customers, and carry on with gathering data and push forward with development with the aim of achieving controllability and sales price which will be acceptable to the market. As an outlook for the future, we are looking to develop small, low priced and highly reliable variable optical lters for market areas that have started to be partially introduced, such as 40 and 100 Gbps high speed WDM systems and optical route controlling optical modules (for instance WSS) in metro and access networks. 4.5 Trial and Evaluation of Ultraviolet Laser Light Processing Optical System 4.5.1 Project Implementer Project Implementer: Seiwa Optical Co.,Ltd. 4.5.2 Results of process examinations as per customer requests Initially we received cooperation from several customer companies for this development, but presently we are going ahead with this development with the cooperation of one company. The optical resolution of the actual processing test carried out to verify this developed product was positioned as the most correct evaluation, and the verication of this developed product would not have been possible without the cooperation of this customer. From the start, the following basic demands of the customer were set as the initial themes. Target of 1m processing desired Weight should be 10 kg or less so that it can be mounted on the device Structure should be such that magnication of lens is exchangeable (4 - 5 exchanges) The results of the tests carried out on customers equipment as per the customer s request are given below. (1) Minimum processing target 1 m To conrm the minimum processing size, test glass processed samples (chrome lm 1000 ) (processing sizes: 1 m, 2 m, 5 m, 8 m and 10 m) were measured with a laser microscope. The measurement results of the processing samples demonstrated that although the minimum processing target of 1m fell slightly short of the minimum resolution target due to laser power adjustment and inclination, etc., the overall processing was stable and reached the targeted value. From the above result, the completion level of this development product was considered to be sufcient for practical use, and the target reached. (2) Reducing weight The total weight of the currently developed optical system
47

including the laser head, lens barrel and objective lens is 8.2 kg. Thus the customer request for keeping the weight below 10 kg was achieved. The developed model was installed on the in-line experimental platform of the company that carried out the trial and evaluation, and the thrust of the linear motor was monitored. It was evaluated from the results that the load factor was around 25%, the electric current value was also steady, and the practical weight target was met sufciently. (3) Magnication exchangeable structure The currently developed optical system can be equipped with a high accuracy high-speed revolver system (simultaneously developed under a separate theme from this development). Therefore, it is possible to develop a system that can observe not only the laser irradiation, but can also observe the alignment of work and its processing with one telescopic instrument. This revolver system (simultaneously exhibited at InterOpto 08) has ve holes, the movement accuracy of each hole is 0.5 m at 3. Moreover, this system has high torque as it has 5 large switching objective lenses with the same focal length of 95 mm. From the above, it can be seen that an optical system that is provided with all the requirements of the customer has been completed and is also equipped with peripheral devices. 4.5.3 Results attained during contract period that must be specifically mentioned Figure 3 is an external image of an optical system for incorporating the device. The total weight with laser head part is installed is 8.2 kg, and no load has to be placed on the axial control that is equipped with this optical system, therefore the motor thrust can be designed to be smaller than previous optical systems. Figure 4 and Figure 5 are images of installations in the in-line correction (repair) equipment (experimental equipment held by the company that carried out the trials and evaluations) that were planned from the initial stages. Alignment optical system (on the right) and processing optical system (observation optical system) are 266 nm ultraviolet processing lens barrel. With the development of lens barrels for actual installation, the thrust of the linear motor has been kept to the minimum, and the load due to gantry movement has been reduced. As a result, a free installation design in which generation size is not a problem has become possible. The equipment in the image is an actual processor installation for G6 generation liquid crystal held by the company that carried out the trials and evaluation. The image shows the equipment at the time of verication. 4.5.4 Problems that occurred during the period and their solutions and results (1) Objective lens Although the current objective lens has cleared the target

Figure 3 The optical system for Installation

Figure 4 Installation in the inline correction equipment - The optical system -

Figure 5 Installation in the inline correction equipment - The optical system on the gantry -

performance, other competing companies are also actively pursuing such development. There is still some dissatisfaction with the 266nm processing accuracy, and reviews are being carried out for coatings in order to improve the permeability and resolution power. Moreover, the designs of assembly tools also need to be examined in order to improve the accuracy of (gaps,center) assembly of lens groups. (2) Auto focus The specications of auto focus (AF) mechanism vary according to the sensors, and the AF product to incorporate in the current development has not been selected yet. Our company has started the development of a laser AF system in order to achieve the completed system conguration, and the basic design is being nalized. After completing the laser AF system, it will be installed in the product currently being developed.

4.5.5 Conclusion Some parts of the above still remain to be examined. Since peripheral equipment such as revolver and laser AF system have also been developed, the next step is to pursue a system that has further improvements and higher level of completion and added value. Depending on the performance of the system, it will contribute greatly in the expanding to 3 dimensional wafers or highly integrated memories in the semiconductor eld, in lines for large panels in the liquid crystal eld, and in examination and correction of next generation FPD. The system will also play a role in achieving higher yield and contribute to industrial development. Apart from the various applications mentioned above which need to be looked at in the future, the following elds also hold great promise as elds of application. 1. Marking devices for materials that are difcult to process with lasers (glass, ceramics) 2. Carbonless and damage-less processing of resins 3. Minute drilling processing
48

Founding New Types of Business

4.6 Trial and Evaluation of High-luminance Coagulation System Using SMF 4.6.1 Project Implementer Project Implementer: Nidek Co., Ltd. 4.6.2 Background and objective of the development Last scal year, the most appropriate light source using an orange ber laser was developed for the photocoagulation remedy for ophthalmology. The next step was to develop the laser photocoagulation system using an orange ber laser light source (refer to gure 6), wherein the output laser from the emerging end of the single mode ber (SMF) was delivered to the diseased eye. We obtained a minimal spot diameter of 6.8 m (measured by knife-edge method), which is approximately 1/10 of spot diameter when the transmission is done with the conventional multi mode ber (MMF). In photocoagulation for ophthalmology, heat is generated by the absorption of retinal tissue by irradiating the laser light to the diseased part and the coagulation is caused by the heat absorption to the proteins in the tissue, however, it is expected that this irradiation method, which utilizes an extremely small spot will prove to be a gentle treatment for the patient. This system was evaluated last scal year, and completed the irradiation test of colored egg white and pseudo-biological tissue . Consequently, this scal year progress was made in the research to prove the possibility of medical applications and to optimize the irradiation condition using a pseudo-biological tissue as an evaluation for making practical use, and the prototype of fundus camera delivery system was set up as well which brings to clinical tests much closer. 4.6.3 Trial and evaluation of trial product (1) Optimization of irradiation condition by high intensity system The optimization of irradiation condition, wherein the

irradiation test on pseudo-biological tissue is carried out, has been advanced. Figure 7 shows the irradiation area of pseudo-biological tissue by a simple-delivery system (spot diameter 6.8 m). The coagulated diameter was 3.4 m and the diameter of the coagulation mark (hereinafter referred to as heat denaturation range) was approximately 17.3 m under the conditions with irradiation power of 47 mW, irradiation time 0.1 sec. Figure 8 shows the relationship of coagulation diameter and heat affected range with the irradiation output, based on these irradiation conditions. Further, Figure 9 shows the relationship of coagulation diameter and heat denaturation range with the irradiation time. The coagulated diameter did not change even when the irradiation output was raised above 47 mW, and the coagulation mark was also consistently around 17 m--20 m regardless of any increase in the irradiation power. The size of the heat denaturation area did not change considerably up to the irradiation time of 0.2 sec. However, it increased proportionately to the increase of irradiation time from 0.3 sec and up. With these results, the heat coagulation is generated in the pseudo-biological tissue and the most suitable irradiation conditions are presumed to be the heat denaturation area should be small, close to irradiation power 47 mW and irradiation time 0.1 sec. The future plan is to verify the conditions in which the range of the thermal effect in the direction of depth is considered further, and the correlation with an actual body is considered. (2) Thermal simulation of photocoagulation Thermal simulation of photocoagulation was carried out to further advance the optimization of irradiation condition. When the physical properties of the retina tissue are assumed to be same as water, and the initial temperature is the body temperature (36C), the irradiation output wherein the average value of maximum temperature and minimum temperature is the coagulation temperature of protein

Power control unit / Laser focusing unit Infrared ray Visible ray Optical fiber

Fiber laser

Wavelength Converter

Laser delivery system

Figure 6 Photocoagulation System developed during last year

49

Figure 7

The irradiation area of pseudo-biological tissue

Figure 8 The relationship of coagulation diameter with the irradiation output

Figure 9 The relationship of coagulation diameter with the irradiation time

If the irradiation area becomes small, the necessary irradiation power also becomes small; however, the power density is not constant and increases suddenly, and as the irradiation diameter becomes small, it easily receives the effects of released heat from the peripheral part. Thus thermal simulation conrmed that the power density necessary when the spot diameter was reduced from 200m to 10m became almost 25 times large. The future plan is to actually irradiate a pseudo-biological tissue, and investigate comparison with these results. (3) Study for the feasibility of medical application of highluminance coagulation system A coagulation method and investigation results obtained by the thermal simulation were proposed to Dr. Akira Obana, Director of the Seirei Hamamatsu General Hospital Ophthalmology Department (Adj. Professor of Photon Medical Research Center in Hamamatsu University School of Medicine), in which multiple photocoagulation spots, which are still being investigated, are irradiated at the same time using DOE (Diffractive Optical Element) as the application of a high-luminance system. This method obtains the temperature distribution appropriate for the coagulation by adjusting the spot irradiation position. Dr. Akira Obana commented about this proposal: In the future, this might become a means for less-invasive photocoagulation, indicating the effectiveness of a high-intensity system. (4) Prototype of fundus camera delivery system Figure 11 shows the trial fundus camera delivery that was manufactured this time. Herewith, in the laser introductory part optical system guided by the light with SMF, the laser light is combined with the optical axis of the camera with the dichroic mirror in the fundus camera, and can be focused on the fundus using the refracting powers of anterior ocular segment like corneas and crystalline lenses of patient. The result of evaluating the coagulated diameter by this system conrmed that the coagulation power met the target specication, and a necessary optical performance can be obtained as a high luminance coagulation system. The future plan is to aim for microsurgery applications at the level of blood vessels and photoreceptor cells, advancing the evaluation and the improvement of overall function including optical performance and operationality. 4.6.4 External announcement and patent 9 cases were reported in the Japan Society of Applied Physics, the Japan Society for Laser Surgery and Medicine only in the current year in the institute. As a result, parties in the laser, medical and various other elds were informed regarding the features and development situation of the orange ber laser, and that Nidek Co., Ltd. is also working on the ophthalmology applications actively using ber laser. One patent application was submitted, and one more application is being prepared.

(approximately 80C) was analyzed by the Finite Element Method (FEM). The disc shape of radius 5 mm, thickness 2 mm were set as the computation model of fundus, to seek the irradiation power and power density necessary for the temperature distribution when the heat source of irradiation size is emerged at the central part of disk for 0.2 sec. Table 5 and Figure 10 show the calculation result of irradiation power and power density for each irradiation diameter obtained by this simulation.

50

Founding New Types of Business

Table 5 Irradiation power and power density for each irradiation diameter
irradiation diameter (m) 10 30 50 100 200 irradiation area (m2) 25 225 625 2500 10000 Irradiation power (mW) 1.0 3.2 6.0 10.0 16.0 power density (W/mm2) 12.73 4.53 3.06 1.27 0.51 Average temperature () 84 80 77 85 85 MAX () 118 112 116 130 129 MIN () 50 48 39 39 40

Figure 10 The relationship of irradiation power and power density with the irradiation area

4.6.5 Summary for this fiscal year In the trial and evaluation for this scal year, the optimization of the irradiation condition has been progressed beyond simply seeking conditions in irradiation experiments and thermal simulations using a pseudo-biological tissue; the characteristic phenomenon of a high-luminance system that can make spot irradiation of m order was taken as the concrete irradiation example in the minute area. However, a remaining issue is detailed comparison between these results and actual organisms. But these problems will continue to be examined in future development, and we want to contribute to development of a new coagulation device in Japan. The result of external evaluation showed the possibility of use for minimal invasive coagulation treatment in the future, considering the thermal simulation. In addition, continued research is necessary in microsurgery applications using laser iridotomy, fundus camera delivery, device improvements, etc. However, recognition of orange ber

Figure 11 Prototype of fundus camera delivery system

laser was raised by the announcement of a number of results concerning the orange ber laser coagulation system of this development, etc. If the replacement with green color laser device advances, the domestic market of 4 billion yen and overseas market of 29 billion yen is expected in the future, so there are hopes for its future development.

51

Study Groups
1.
The OITDA establishes Study Groups in order to grasp the new trends in optoelectronic technology through the exchange of the latest information on forefront technology in this sector and thereby contribute to both academia and industry. In FY2008, ve groups, including the Optical Disk Study Group, Photonic Devices and Applications Study Group, Optical Materials and Application Technology Study Group, Advanced Photo-Excised Materials Processing Study Group and the Photonic NGN Technologies Study Group, have undertaken their activities in each of their technological areas with the participation of the members from industry, government and academia. Since its inauguration in July 1983, the Optical Disk Study Group has offered a forum of discussion on technological development, standardization, and other subjects including reports on international conferences related to optical disks. In FY 2008, Dr. Junji Tominaga (Director of the AIST Center for Applied Near-eld Optics Research) as Chief Secretary and 11 organizing members led the activities of the Group that involves 60 members. Six meetings were organized, as indicated in the table below. During the meetings, lectures were given on a variety of subjects including the most advanced technologies, not only in optical disks, but also the competing sectors of hard disks and ash memory. A total of 315 people attended the meetings where active discussions were held.
Lecturer Theme Lecturer 1st Meeting (163) Exhibition Report / Media (May 16, 2008) Theoretical investigation of refractive index of phase- change lms and Junji Tominaga amorphous structures on the basis of (AIST) ab-initio computer simulation Takashi Nakano Progress of Super-RENS (AIST) What is the smallest size of phase-change Keiji Tanaka marks? (Hokkaido Univ.) Design Strategies of Efcient Two-photon Jun Kawamata (Yamaguchi Univ.) Absorption Materials Bit Error Rate Based Evaluation of Hideharu Tajima Energy-Gap-Induced Super-Resolution (Sharp) (EG-SR) ROM Disc in Blu-ray Disc Optics Transition of sputtering target business for Shozo Komiyama (MITSUBISHI MATERIALS) optical disc 2nd Meeting (164) Fundamentals of Optical Discs -1st- / HDD, Flash memory (Jul. 25, 2008) Tsutomu Shimura Fundamentals of Holographic Recording (Univ. of Tokyo) Takashi Nakano Fundamentals of Near-Field Recording (AIST) Yoshimasa Kawata Fundamentals of Two-Photon Recording (Shizuoka Univ.) Keizo Mori NAND Flash Memory Technology Trend (Toshiba) Junji Ishikawa Future trends on storage media (Giga Stream)

Introduction

2.

Optical Disk Study Group

3rd Meeting (165) ISOM, EPCOS Report / Apprications (Sep. 26, 2008) Yukari Iimura Promotion of Digital Content Trading (MIC) What we can learn lessons from DVD in Koichi Ogawa Blu-ray Disc Business (Univ. of Tokyo) Ariyoshi Nakaoki ISOM/ODS 08/EPCOS Report (Sony) Toward Adoption of Optical Disks for Kunimaro Tanaka Preservation of Digitized Cultural Heritage (Teikyo Heisei Univ.) Ayumi Mitsumori Multi-layer 400 GB optical disk (Sharp) New Business Model by Converging Hiroshi Uchikoga Optical Disc and Internet (VISIONARE) 4th Meeting (166) Head / Device / Hologram (Nov. 14, 2008) Shuichi Ichiura Trend of optical pick-up for optical disk (SANYO Electric) Stable Rotation of Optical Disks over Tomoharu Mukasa 15000 rpm (Sony) Properties of New Fluorinated Holographic Kazuyuki Satoh Recording Material for Collinear (DAIKIN INDUSTRIES) Holography Collinear Hologram Memory with Optical Mitsuteru Inoue (TOYOHASHI Univ. of TECH) Phase-lock Method Holographic Data Storage Using Adaptive Tetsuhiko Muroi Optics (NHK) Mode Hopping Detection Technique for Masaki Tanaka External Cavity Laser Diodes (Sharp) 5th Meeting (167) Fundamentals of Optical Discs -2nd- / Analyses / Simulations (Jan. 23, 2009) Soft-Input Soft-Output Decoding of Toshiyuki Miyauchi PR-channels and 17PP code (Sony) Tracking Servo Technology for Optical Kiyoshi Ohishi Disk (Nagaoka Univ. of Tech) Structure analyses reveal indespensable features to rewritable phase-change Toshiyuki Matsunaga recording materials, amorphous stability (Panasonic) and high-speed phase change Near-Field Optical Disk System on a Kim Sunmin top-coated media with high refractive (Sony) index material 6th Meeting (168) Future Technology / Market Trends (Mar. 13, 2009) Ikuo Matsumoto Sudden change of Optical disk market and & Emiko Sakata future trend (Fujiwara-Rothchild) Ryoichi Imanaka A storage solution for medical (Panasonic Medical Solutions) Storing more efciently with storage Masaaki Amazutsumi inovation (EMC JAPAN) Masahiro Birukawa Rewritable dual-layer recording for (Panasonic) near-eld coupled SIL system Organoboron-based optical memory with Shizuo Fujita two-photon absorption recording and batch (Kyoto Univ.) readout processing Advance of highly functional ultrashort Norihiko Nishizawa pulse ber laser (Osaka Univ.)

3.

The Group was established in 1986. In the history of its activities, the Group s name has changed from the OEIC Technology Study Group (1986 to 1992) to the OEIC and Optical Interconnection Technology Study Group (1993 to 2004) to the Photonic Devices and Applications Study
52

Photonic Devices and Applications Study Group

Study Groups

Group (2005 till today). It is one of the oldest groups within the OITDA with more than 20 years history since its inauguration. The objective of the Group is to discuss the status quo and future development and prospects of the optical interconnection technologies, optical devices in general and their related and applied technologies in addition to its original subject of OEIC technologies. Through the discussion and the exchange of information among the members from industry, government and academia, the Group aims at cultivating and promoting the abovementioned technologies in the optoelectronic industry. The Group is lead by Mr. Osamu Wada, Professor of Kobe University and 13 organizing members. In FY2008, the Group organized six meetings including one workshop that was opened to the public (i.e. people other than members could participate in the meeting) as it has done every year, and active discussions and exchanges of information were conducted. With 80 members, the Group has the most members of all the OITDA s study groups. Also, the 17th Workshop held in FY2008 was attended by over 120 people including members and general participants, showing the strong interest in the Group by people in the industry. A poster session and informal discussion are held during the study group, which are well regarded by members each time as a valuable and useful forum enabling more in-depth discussions between speakers and members.
Lecturer 1st Meeting Optical Fiber / Optical Waveguides (May.21,2008) Characteristics of HAF (Hall Assisted Shigeru Tomita Fiber) and its applications (NTT) Graded-Index Polymer Parallel Optical Takaaki Ishigure Waveguide enabling High-density and (Keio univ.) High-Speed Parallel Interconnections Ultra-Wide-Band Low Loss and High Shotaro Takenobu Reliability Polymer Optical Waveguides (Asahi Glass) 2nd Meeting Optical Interconnection (Jul.2,2008) Optical Interconnection Kohroh Kobayashi Novel Information Transmission by (Tokyo Institute of Photonics Technology) Junya Kobayashi Polymer optical waveguides (NTT) Wavelength-Division-Multiplexing Shogo Ura Optical-Interconnect System in Packaging (Kyoto Institute of Technology) 3rd Meeting Si Photonics / Nanophotonics (Oct.7,2008) Norio Okada REPORT (ECOC 2008) (Mitsubishi Electric) Hideaki Okayama REPORT (Group IV Photonics, 2008) (Oki Electric ) Recent progress and development on Si Toshihiko Baba Photonics (Yokohama national Univ.) Around development, manufacture, sales Shojiro Kawakami of photonic crystal chip and applied (Photonic Lattice,Inc.) instrument Lecture Theme

4th Meeting Workshop on Photonics changes our lifestyle (Nov.20,2008) Recent progress in 100-Gb/s large capacity Akihide Sano optical communication systems (NTT) Technology status and new era of optical Tetsu Tanaka interconnection for LSI (Tohoku univ.) Achievements of organic Shizuo Tokito electroluminescence display (NHK) Recent progress and task, prospect SHG Green Laser Light Source on LiNbO3 Hiroyuki Furuya (Panasonic) and Its Application to Laser Display Trends in Leading-edge LED Lighting Sumio Shimode Technologies and Their Application to (Panasonic Electric Works) Lighting Fixtures Salt-type technology Hikari-technology Naoki ikezawa Hikari-technology will open new (Nomura Research Institute) exploration in all industries Recent Developments in Quantum Cascade Masamichi Yamanishi (Hamamatsu Photonics) Lasers and Their Applications 5th Meeting Optical communication / Optical Sensing Technology and Applications (Jan.20,2009) Shinichiro Haruyama Visible Light Communication (Keio Univ.) Terahertz wave sensing devices for clinical Toshihiko Ouchi applications (Canon) Jun Ohta Photonic LSI Device Technologies for (Nara Institute of Science and Biomedical Applications Technology) 6th Meeting VCSEL / Optoelectronic packing technology (Mar.11,2009) VCSEL with Optical Outlet Rod for Osamu Mikami Optical Interconnection (Tokai univ.) Optical Packaging Technologies for Atsushi Suzuki Intracabinet Optical Interconnections (AIST) Alignment Free VCSEL Array Optical Tomoki Sekiguchi Module (Sumitomo Electric)

4.

The Group was established to promote active development of optical materials for industry application, offering researchers and engineers a forum for communication and exchange of information covering a broad range of areas, from optical crystal and optical materials to related devices and application technologies. The Group originated in 1989 when the Evaluation Committee of LN Crystal for OEIC was established. Thereafter, it was active on the main topics of the moment, as the LN Crystal Study Group, etc. The Group nally changed its name to the current Optical Materials and Application Technology Study Group in 1998. The Group had 57 members in FY2008 and was led by Prof. Minakata, Chief Secretary, and 11 organizing members. Lectures delivered to the Group this year are indicated in the table below. In particular, the third meeting was held in Kyoto, inviting Professor Fayer (Stanford University) and Professor Noda (an authority on photonic crystals at Kyoto University). It was a big success, promoting close communication among the members who spent many hours in discussions and exchanges of information until late at night.
53

Optical Materials and Application Technology Study Group

Lecturer 1st Meeting Communication Technology (Jun.20,2008) Shigeru Nakamura Report on OFC 2008 (NEC) Katsuhiko Miyamoto Report on CLEO 2008 (RIKEN) Visible Light Communication and Yoshinori Matsumoto Integrated CMOS Optical Receiver (Keio Univ.) Masayuki Izutsu Advanced LiNbO3 Light Modulators (Tokyo Inst.of Tech) Hybrid Technology of PLC-Free Space Shinji Mino Focusing Optics (NTT) Keiji Isamoto The Development of MEMS-VOA (santec) 2nd Meeting Materials & Thin lms (Oct.3,2008) Organic Crystals Showing Photoresponsive Seiya Kobatake Shape Changes (Osaka City Univ.) Recent Progress in Monolithically Hiroshi Yasaka Integrated InP Photonic Devices (Tohoku Univ.) From Growth of NaI Crystal to It s Yasuo Baba Apprication for Scintillator (HORIBA) The Quartz Crystal Device which Support Kazuo Shimazaki (Nihon Dempa Kogyo) Comfortable Society 3rd Meeting Nonlinear optics & Photonic crystal (Nov.21,2008) Advances in Nonlinear Optics using Martin M. Fejer Microstructured Media (Stanford Univ.) Manipulation of Photons by Photonic Susumu Noda Crystals (Kyoto Univ.) Hiroshi Murata LiNbO3 Photonic Crystal Structure (Osaka Univ.) Wavelength Conversion using Takashi Kondo Semiconductor-based Waveguiding (The Univ. of Tokyo) Devices Katsuhiko Tokuda Microchip Green Laser using PPMgSLT (SHIMADZU) Kazuhisa Yamamoto Laser Display (Panasonic) Takunori Taira Report on EuroPhoton 08 (NINS) Masaki Asobe Report on ECOC 08 (NTT) Kazuhisa Yamamoto Report on CEATECH 08 (Panasonic) General Discussion New Development of Optical Material all attendees and Devices Night Session with Speakers and Advisors 4th Meeting Laser / Nonlinear optics technology (Mar.6,2009) Koji Matsubara Current Status of R&D on Photovoltaics (AIST) Possibility of Yb-doped Fiber Lasers ASE control by Photonic Band Gap Ken-ichi Ueda Structure and Photo Darkenig / Photo (Univ. of Electro-Com) Bleaching Development of Solid-State and Fiber Tomoyuki Wada Lasers for Industrial Applications (MegaOpto / RIKEN) Development of High Quality Lasers for Norikatsu Mio Interferometric Gravitational Wave Detectors (The Univ.of Tokyo) Planar-Waveguide Green Laser for Laser Yosuke Akino TV (Mitsubishi Electric) Takunori Taira Advanced Solid-State Photonics 2008 (NINS)

Lecturer Theme

5.

High-power ber lasers have seen remarkably wide use in recent years, with large success in the automotive industry, etc. There is also great interest in the physical properties of picosecond/femtosecond extremely short pulse lasers, but they are difcult to stabilize. These are also moving to the applications stage, as products are shipped targeting industrial uses. In order to introduce these new optical process technologies to the industry, it is necessary to integrate effectively multiple technologies, not only light sources and optical system technologies, but also physicochemical reactions, preceding and subsequent processes, control mechanisms, and measuring and analytical technologies. The integration of these technologies must be made in accordance with the requirements of the processed materials, their structures and the kinds or usages of the products. The objective of the Group is to give those people who own the relevant technologies an opportunity to meet each other and to discuss the development of effective optical processing technologies. In FY 2008, ve meetings were held as indicated in the table below. Based on the talks, there were lively discussions on the various themes ranging from fundamentals of optical processing to recent examples of applications. A lab-tour of a venture support facility in Kyoto was organized for the 4th Study Group Meeting, and was welcomed by the members as a helpful means to understand technology development.
Lecturer 1st Meeting Laser Processing from Basics to Recent Trends (Jul.10,2008) The ber lasers for micro-processing Masaki Sawada applications (IPG Photonics Japan., Ltd.) Development of high-repetition rate, Takashige Omatsu high-power picosecond vanadate lasers (Chiba Univ.) Advanced light sources for next generation Hakaru Mizoguchi lithography (Gigaphoton Inc.) Current status and the application of Sigeki Okauchi high-power laser diode based on gallium (Nichia Corporation) nitride semiconductor Advances in photonic-crystal, surfaceSusumu Noda emitting lasers (Kyoto Univ.) Nobuaki Iehisa Brief introduction of high-speed & (Miyachi Corporation) precision laser welding system 2nd Meeting Basics and Peripheral Technologies for Future Photo-Excited Materials Processing (Aug.27,2008) Physics of laser-matter interaction for Hitoki Yoneda processing from room temperature to plasma (Univ. of Electro-Communications) Recent topics of laser micro and nano Koji Sugioka processing (RIKEN) Parallel femtosecond laser processing Yoshio Hayasaki using a spatial light modulator (Utsunomiya Univ.) Aspheric and diffractive optics for laser Keiji Fuse (Sumitomo Electric Hardmetal Corp.) processing Canon s action to galvanic scanner for Shinji Ueda further fast response and precision (Canon Inc.) enhancement Mitsuhiro Kudoh LD light source modules <RV-1000> (RICOH Optical Industries) Lecture Theme

Advanced Photo-Excised Materials Processing Study Group

54

Study Groups

3rd Meeting Laser-Processing Technology to Give a New Dimension to Upcoming Electronics Industries (Oct.15,2008) Assembly technology for SiP and 3D LSI Chuichi Miyazaki of Renesas Technology (Renesas Technology Corp.) Akira Watanabe Laser direct writing of metal micro wirings (Tohoku Univ.) Jun-ichi Fujikata LSI on-chip optical interconnect (Semiconductor Leading Edge Technologies, Inc.) Tatsuzo Yamasaki Various laser processing for electronics packaging (Coherent Japan, Inc.) Advanced laser dicing technology for Naoki Uchiyama MEMS: The stealth dicing technology (Hamamatsu Photonics k.k.) High power semiconductor lasers: from Tsuyoshi Fujimoto R&D to product (OPTOENERGY Inc.) 4th Meeting Prospects of Laser Applications for Nanotechnology (Dec.12,2008) Masaaki Sakakura Mechanism and application of (Kyoto Univ.) femtosecond laser processing Fine tuning of trimming die for production Masahiro Tsukamoto of electronic components by pulsed laser (Osaka Univ.) irradiation Novel nonlinear optical microscopy and its Kazuyoshi Itoh applications to bioimaging (Osaka Univ.) In-situ egg grading with various light Tatsuo Nambu sources (NABEL Co.,Ltd.) Laboratory Tour Kyodai Katsura Venture Plaza 5th Meeting New Trend of Laser Macro-Processing (Feb.20,2009) Laser micro processing of semiconductors Koji Wakabayashi and dielectrics (TRUMPF Co. Ltd.) Takagimi Yanagitani Current and future status of ceramic laser (Konoshima Chemical Co.,Ltd) Laser-assisted direct joining of metal and Seiji Katayama plastics (Osaka Univ.) Manabu Ayabe (Sumitomo Heavy Industries Topics of ber laser machining Mechatronics, Ltd.) High power laser application in steel Naoya Hamada industry (Nippon Steel Corporation) Recent applications of laser Wayne Lewis micromachining in Europe (Beams, Inc.) Development of the solar control glass Motoshi Ono using laser induced diffraction grating (ASAHI GLASS CO., LTD.) Development of industrial femtosecond Tetsumi Sumiyoshi lasers and their applications (Cyber Laser Inc.)

inuenced the themes selected for the rst through the fth meetings. The rst theme was wireless technologies, and the second was photonic module technologies. The third meeting was followed by the open workshop held in November, the main meeting of the Group, at which NGN Innovation was the theme in FY 2007, while in FY 2008 it was Initial Steps of NGN. A wide range of speakers gathered from the mass media, carriers, infrastructure companies, and service providers held many discussions on the current status and future outlook. Also, the fourth meeting looked overseas at Asia s broadband situation, with talks on the local status heard directly through simultaneous translation. The fth meeting discussed the status and future outlook of the NGN era, as the Group came to an end. The Photonic NGN technologies Study Group appears to have been extremely timely, as it was held over the two years in which NGN was commercialized as mentioned above. In FY 2009, we plan to continue discussions on the industry and technologies in the new era of continually developing photonic networks.
Lecturer 1st Meeting Open forum Optical/Wireless Integration (May.15,2008) Nobuhisa Nisikata Wireless policy at broadband era (MIC) The current status and perspectives of Atsushi Yoshioka WiMAX and Broadband Network (AlcatelLucent) Shozo Komaki Communication Network Infrastructures (Osaka Univ.) under Competition: Microwave Photonics Katsutoshi Tsukamoto (Osaka Univ.) Panel Discussion Optical/wireless Integration and Technical All Lecturers problem 2nd Meeting Open forum Optical devices and their circumference technologies (Jul.17,2008) Yasuo Shibata Advances in InP Mach-Zehnder Modulators (NTT) Masayoshi Tsuji 1m-range high speed VCSELs (NEC) The Latest Trend of High-speed Optical Tadashi Ikeuchi Transceiver Module for Long Reach Transmission (Fujitsu) Panel Discussion All Lecturers Optical device for communication 3rd Meeting Workshop NGN that began to move View in current state and the future (Nov.13,2008) Next Generation Network and New Tomonori Aoyama Generation Network (Keio Univ.) Japanese NGN as telecommunications Toshiaki Matsumoto operator service (Nikkei BP) George Kimura NTT West Approach to NGN (NTT-West) A sustainable service provider network Tsuyoshi Kinoshita (Sisco systems) architecture Ryuji Enoki SaaS over NGN (salesforce.com.) NGN from the view point of Inetenet Hisao Iizuka Buisiness (NEC biglobe) Panel Discussion All Lecturers NGN now, NGN in Future, and Our NGN Lecture Theme

The Photonic NGN technologies Study Group collected information and shared opinions on technology trends and market trends in optical routers, optical switches, next generation optical bers, access networks, optical interconnections, etc., as photonic technologies and industries of the NGN era. The future outlook of these NGN technologies was also discussed among people in the industry together with people in government and academia, working for development and promotion of industry in the optical communications eld. The Group has 77 members (including organizers), and was managed by 19 organizing members, in which Prof. Tomonori Aoyama (Keio University) was the Chief Secretary. The start of NGN services by NTT East in March 2008
55

6.

Photonic NGN Technologies Study Group

4th Meeting Open forum Asian Trend of Optical broadband Network (Jan.20,2009) BT21CN - real-time, open, global IP Yung Kim platform (BT Japan) Shoichi Hanatani FTTHAsian Progress (Hitachi) Packet Transport in All Optical Networks Vasile Radoaca Technology and Applications (AlcatelLucent) Convergence Creates Values Yanfeng Ma Huawei Optical Networking Overview (Huawei) 5th Meeting Open forum Current state of photonic network and development in the future (Mar.3,2009) Hiroaki Harai New Generation Network (NICT) Kazuhiro Matsuda (NTT) Next Generation IX (Internet Exchange) Katsuyasu Toyama (Internet Multi eld) 40G/100G High-speed transport Shinji Matsuoka technologies for optical transport networks (NTT) Achievements and Prospects of Kunimasa Saito Microstructured Optical Fibers (Hokkaido Univ.) Visitiing Tour: National Institute of Information and Communications Technology

56

Standardization
Standardization has been a major activity of OITDA since its establishment. OITDA s standardization efforts were initially directed to standardization of laser safety and optical transmission. Since then, standardization of optical memories, photovoltaic cells and modules was added to its activities, and committees were established to study the international standards such as ISO and IEC. Today, OITDA s standardization activities cover a wide range of optoelectronic elds. Figure 1 shows the present organization of OITDA s standardization committees. In addition to the standards certication development work Standardization of safety and reliability of optical components/modules for high quality optical transmission equipment for broadband optical networks and FTTH commissioned by the Ministry of Economy and Industry starting FY 2007, we have been commissioned in a three year plan for new Standardization of mechanical reliability

1.

Introduction

evaluation method for SFP optical transmission modules and Standardization of testing methods of laser diodes for sensing applications in FY 2008 and we are aiming to establish international standards for each of these elds. The photovoltaic cell project requested by NEDO, Standardization of comprehensive photovoltaic cell evaluation technology, entered into the second year of R&D. The Standardization General Committee was held in July 2009, and a symposium on standardization was held in February 2009. Nine JIS drafted by OITDA were established or revised this scal year. Table 1 lists the JIS drafted by various standardization committees of OITDA and established so far, and Table 2 lists OITDA standards and technical papers (OITDA-TPs). The activities of standardization committees are reported below.

Figure 1 Organization Chart of Optoelectoronic Industry and Technology Standardization Committee (FY2008)

57

Table 1 JIS list in optoelectronics

Standardization Committees Fiber distribution system Optical Fibers 1 Titles of standards JIS No. Establishment date reafrmed. Mar.20.2009. revised. Mar. 20, 2005 revised. Jul. 20, 1999 revised. Jan. 1, 1995 revised. Apr. 20, 1999 revised. Aug. 20, 1997 revised. Jan. 1, 1995 revised. Jan. 20, 2005 revised. Feb. 20, 1998 revised. Aug. 20, 2001 revised Mar.20,2009 revised. Feb. 20, 1999 revised. Feb. 20, 1999 revised. Jan. 20, 2005 revised. Apr. 20, 1999 revised. Oct. 20. 2008 revised. Mar. 20, 2001 revised. Jan.20,2008 Mar.25,2006 revised. Jul. 20, 1999 revised. Jan. 20, 2006 revised. Jan. 20, 2006 revised. Apr. 20, 1999 Sep. 1, 1991 Jun. 1, 1990 Jan.20,2008 Nov. 20, 2006 Optical Devices (active) 18 Optical Connectors 20 F 17 Type connectors for optical ber cables 21 F18 Type connectors for optical ber cables 22 F19 Type connectors for optical ber cables Optical Devices (passive) 1 JIS C 5986 JIS C 5987 JIS C 5988

Mar. 31. 2009 Nov. 20, 2006 Dec.20, 2005 Dec.20, 2005 revised. Nov. 20, 1997 revised. Mar.20, 2009 Sep. 1, 1992 Sep. 1, 1992 Mar. 20. 2009 Mar. 20. 2010 revised. Nov. 20, 2006 revised. Mar.20, 2001 revised. Nov. 20, 2006 Mar.25,2006 Mar.25,2006 Mar.25,2006 revised. Dec. 20, 2005 revised. Dec. 20, 2005 Nov. 1, 1988 revised. Nov. 20, 2006 Oct. 1, 1993 Jul.20,1999 Jan.20,2005 revised. Aug. 20, 1997 revised. Aug. 20, 1997 revised. Aug. 20, 1997 revised. Aug. 20, 1997 revised. Apr. 20, 2005 revised. Apr. 20, 2005 Jan. 20,2005 Jan. 20,2005 Mar. 20, 2007 revised. Aug. 20, 1997 revised. Aug. 20, 1997 Sep. 20. 2008

Optical ber distribution system for customer TS C 0017 premises (Type II) JIS C 6820

1 General rules of optical bers 2 3 4 5 6

General rules of passive devices for light beam JIS C 5860 transmission JIS C 5870 JIS C 5871

Test methods for mechanical characteristics of JIS C 6821 optical bers Test methods for structural parameters of JIS C 6822 multimode optical bers Measuring methods for attenuation of optical JIS C 6823 bers Test methods for bandwidth of multimode optical JIS C 6824 bers Test methods for structural parameters of singleJIS C 6825 mode optical bers

2 General specications of interference lters 3 Test methods for interference lter 4

Test methods of optical isolators for light beam JIS C 5873 transmission JIS C 5876-1 JIS C 5877-1

5 General specications of retarder 6 General specications of polarizer 7 8

General rules of passive devices for ber optic JIS C 5900 transmission Test methods for passive devices for ber optic JIS C 5901 transmission

Test methods for chromatic dispersion of optical 7 JIS C 6827 bers 8 Optical ber cords 9 Jacketed optical bers 10 Silica glass multimode optical bers 12 Plastic cladding multimode optical bers 13 Silica glass single-mode optical ber 14 All plastic multimode optical ber cords 15 All plastic multimode optical bers 16 Fiber ribbons 17 Indoor optical ber ribbon cables 18 JIS C 6830 JIS C 6831 JIS C 6832 JIS C 6834 JIS C 6835 JIS C 6836 JIS C 6837 JIS C 6838 JIS C 6839

General rules of optical branching devices (Non9 JIS C 5910 wavelength-selective branching devices) 10 General rules of wavelength switches 11 General rules of optical circulators 12 JIS C 5912 JIS C 5914

11 Multicomponent glass multimode optical bers JIS C 6833

General rules of dispersion compensators for ber JIS C 5916 optic transmission JIS C 5920 JIS C 5930 JIS C 5931 JIS C 5932

13 General rules of optical attenuators 14 General rules of optical switches 15 Test methods for optical switches 16 General rules of optical isolators 17

Test methods of optical isolators for ber optic JIS C 5933 transmission General rules of lenses for ber optic JIS C 5934 transmission

Polarization crosstalk measurement of Optical JIS C 6840 ber JIS C 6841 JIS C 6850 JIS C 6851

19 Optical ber fusion splicing method 20 General rules of optical ber cables 21 Optical ber cable test procedures

Measurement methods of lenses for ber optic 19 JIS C 5935 transmission 1 General rules of laser diodes for ber optic JIS C 5940 transmission

Test methods for mechanical characteristics of 22 JIS C 6861 all plastic multimode optical bers and cords Test methods for structural parameters of all 23 JIS C 6862 plastic multimode optical bers 24 Test methods for attenuation of all plastic JIS C 6863 multimode optical bers

Measuring methods of laser diodes for ber optic 2 JIS C 5941 transmission General rules of laser diodes used for recording 3 JIS C 5942 and playback 4 5 Measuring methods of laser diodes used for JIS C 5943 recording and playback General rules of laser diode modules for ber JIS C 5944 optic transmission

Measurement methods and test procedures 25 Differential mode delay of multimode optical JIS C 6864 bers 26 Indoor optical ber cables - Part 2: Sectional JIS C 6870-2 specication

Measuring methods of laser diode moduler for 6 JIS C 5945 ber optic transmission 7 General rules of laser diode modules for optical JIS C 5946 ber amplier

Indoor optical ber cables - Part 2-10: Indoor 27 cables - Family specication for simplex and JIS C 6870-2-10 Jan.20,2008 duplex calbes Optical ber cables -- Part 2-20: Indoor cables 28 -- Family specication for multi-ber indoor JIS C 6870-2-20 Jan.20,2008 optical distribution cables Outdoor optical ber cables - Part 3: Sectional 29 JIS C 6870-3 specication Test methods for structural parameters of 30 JIS C 6871 polarization-maintaining optical bers 31 Optical Connectors Beat length measurement of polarizationJIS C 6872 maintaining optical bers Nov. 20, 2006 Oct. 20. 2008 Oct. 20. 2008 revised. Mar. 20, 2001 revised. Dec.20, 2005 Mar. 20, 2001 revised. Dec.20, 2005 revised. May.20, 1998 revised. May.20, 1998 revised. Dec.20, 2005 revised. May.20, 1998 revised. May.20, 1998 revised. Mar.20, 2001 revised. May.20, 1998 revised. May.20, 1998 revised. May.20, 1998 revised. May.20, 1998 revised. Dec.20, 2005 revised. Mar.20, 2001 revised. Jan.20, 2006 Mar.20,2001 Mar.20, 2001

Measuring methods of laser diode modules for 8 JIS C 5947 optical ber amplier Laser modules used for telecommunication 9 JIS C 5948 Reliability assessment 10 11 General rules of light emitting diodes for ber JIS C 5950 optic transmission Measuring methods of light emitting diods for JIS C 5951 ber optic transmisson

Fibre optic active components and devices 12 -Package and interface standards - Part 1:General JIS C 5952-1 and guidance Fibre optic active components and devices 13 Package and interface standards - Part 2:SFF JIS C 5952-2 MTRJ 10-pin transceivers Fibre optic active components and devices 14 -Package and interface standards - Part 3:SFF JIS C 5952-3 MTRJ20-pin transceivers Fibre optic active components and devices 15 Package and interface standards - Part 4:PN 1x9 JIS C 5952-4 plastic optical bre transceivers Fibre optic active components and devices 16 Package and interface standards - Part 5:SC 1x9 JIS C 5952-5 bre optic modules Fibre optic active components and devices 17 Package and interface standards - Part JIS C 5952-6 6:ATMPON transceivers Fibre optic active components and devices 18 Package and interface standards - Part 7:SFF LC JIS C 5952-7 10-pin transceivers Fibre optic active components and devices 19 Package and interface standards - Part 8:SFF LC JIS C 5952-8 20-pin transceivers Fibre optic active components and devices 20 Package and interface standards - Part 9:SFF MU JIS C 5952-9 duplex 10-pin transceivers Fibre optic active components and devices 21 Package and interface standards - Part 10:SFF JIS C 5952-10 MU duplex 20-pin transceivers

General rules of connectors for optical ber 1 JIS C 5962 cables Test methods of connectors for optical ber 2 JIS C 5961 cables 3 General rules of connectors with optical ber JIS C 5963 cables JIS C 5970 JIS C 5971 JIS C 5972 JIS C 5973 JIS C 5974 JIS C 5975 JIS C 5976 JIS C 5977 JIS C 5978 JIS C 5979 JIS C 5980 JIS C 5981 JIS C 5982 JIS C 5983 JIS C 5984 JIS C 5985

Sep. 20. 2008

Sep. 20. 2008

4 F01 Type connectors for optical ber cables 5 F02 Type connectors for optical ber cables 6 F03 Type connectors for optical ber cables 7 F04 Type connectors for optical ber cables 8 F05 Type connectors for optical ber cables 9 F06 Type connectors for optical ber cables 10 F07 Type connectors for optical ber cables 11 F08 Type connectors for optical ber cables 12 F09 Type connectors for optical ber cables 13 F10 Type connectors for optical ber cables 14 F11 type connectors for optical ber cables 15 F 12 Type connectors for optical ber ribbons 16 F13 Type connectors for optical ber ribbons 17 F14 Type connectors for optical ber cables 18 F15 Type connectors for optical ber cables 19 F16 Type connectors for optical ber cables

Sep. 20. 2008

Sep. 20. 2008

Sep. 20. 2008

Sep. 20. 2008

Sep. 20. 2008

Sep. 20. 2008

Sep. 20. 2008

58

Standardization

Optical Devices (active)

Fibre optic active components and devices 22 Package and interface standards - Part 11:14-pin JIS C 5952-11 modulator-integrated laser diode transmitters Fibre optic active components and devices 23 Package interface standards - Part 12: Laser JIS C 5952-12 transmitters with a coaxial RF connector Fiber optic active components and devices 24 -Performance standards - Part 1: General and JIS C 5953-1 guidance Fiber optic active components and devices 25 Performance standards - Part 3: 2.5Gbit/s JIS C 5953-3 modulator-integrated laser diode transmitters 26 Fiber optic active components and devices Performance standards - Part 4: 1300 nm ber JIS C 5953-4 optic transceivers for gigabit Ethernet application

Sep. 20. 2008

Optical Measuring Instruments

5 6

Test methods of optical power meters for optical JIS C 6184 ber Test methods reectometer of optical time domain JIS C 6185

Oct. 1, 1993 revised. Jan.20,2008 Aug.20,2007 Apr. 20, 1999 Jul.20,1999 Jul.20,1999 Mar.20,2004 Oct. 1, 1993 Apr. 20, 2005 Jan.20,2008 Mar.20,2004 Jan.20,2005 revised.Nov.1, 1988 revised.Jan.20, 2005 Jan.20,2006 Oct. 20. 2008 Mar.15,1994 Dec.20,2001 revised.Sep.20, 2005 revised.Feb.20, 1998 revised.Sep.20, 2005 revised.Feb.20, 1998 revised.Sep.20, 2005 revised. Feb. 20, 1998 revised.Sep.20, 2005 revised. Feb. 20, 1998 revised.Sep.20, 2005 revised.Feb.20, 1998 revised.Sep.20, 2005

Sep. 20. 2008 7 Mar. 20, 2007

Calibration of optical time-domain reectometers JIS C 6185-2 (OTDR) JIS C 6186 JIS C 6187 JIS C 6188 JIS C 6189 JIS C 6190 JIS C 6191 JIS C 6192

8 Calibration of ber optic power meters 9 Test methods of optical wavelengthmeters 10 Test methods of measuring optical attenuators 11 Test methods of optical return loss meters 12 Test methods for ber optic test sources 13 Test methods of tunable light sources 14 Calibration of optical spectrum analyzers 15

Mar. 20, 2007

Sep. 20,2008

Fiber optic active components and devices 27 Performance standards - Part 5:ATM-PON JIS C 5953-5 transceivers with LD driver and CDR ICs Fiber optic active components and devices 28 Performance standards - Part 6:650 nm 250 JIS C 5953-6 Mbit/s plastic optical ber transceivers Fiber optic active components and devices - Test 29 and measurement procedures - Part 1: General JIS C 5954-1 and guidance Fiber optic active components and devices - Test 30 and measurement procedures - Part 2: ATM-PON JIS C 5954-2 transceivers 31 32 General rules of photodiodes for ber optic JIS C 5990 transmission Measuring methods of photodiodes for ber optic JIS C 5991 transmisson

Oct. 20,2008 16 Mar.20,2009 Laser Safety

End-face image analysis procedure for the JIS C 6828 calibration of optical ber geometry test sets Calibration of ber optic chromatic dispersion JIS C 6829 test sets JIS C 6801 JIS C 6802

1 Glossary of terms used in laser safety 2 Safety of laser products

Oct. 20,2008

Safety of laser products -Safety of optical bre JIS C 6803 communication systems

Oct. 20,2009 revised. Aug. 20, 1997 Solar Cells revised. Aug. 20, 1997 revised. Nov. 20, 1997 revised. Nov. 20, 1997 Sep.20.1996

Safety of laser products -- Safety of free space 4 optical communication systems used for JIS C 6804 transmission of information 1 Filters and radiation eye-protectors against laser JIS T 8143 JIS C 8910 JIS C 8910 JIS C 8911

Primary reference solar cells Primary reference solar cells (Amendment1) Secondary reference crystalline solar cells

General rules of transmitting and receiving 33 JIS C 6110 modules for low speed ber optic transmission 34 Measuring methods of transmitting and receiving JIS C 6111 modules for low speed ber optic transmission

2 Secondary reference crystalline solar cells JIS C 8911 (Amendment1) Solar simulators for crystalline solar cells and JIS C 8912 modules Solar simulators for crystalline solar cells and JIS C 8912 modules (Amendment1) Measuring method of output power for crystalline JIS C 8913 solar cells Measuring method of output power for crystalline JIS C 8913 solar cells (Amendment1) Measuring method of output power for crystalline JIS C 8914 solar PV modules Measuring method of output power for crystalline JIS C 8914 solar PV modules (Amendment1) Measuring methods of spectral response for JIS C 8915 crystalline solar cells and modules 6 Measuring methods of spectral response for and modules JIS C 8915 crystalline solar cells (Amendment1) Temperature coefcient measuring methods of output current for crystalline solar cells and JIS C 8916 modules Temperature coefcient measuring methods of output current for crystalline solar cells and JIS C 8916 modules (Amendment1) Environmental and endurance test methods for JIS C 8917 crystalline solar PV modules Environmental and endurance test methods for JIS C 8917 crystalline solar PV modules (Amendment1) Crystalline solar PV modules Crystalline solar PV modules (Amendment1) JIS C 8918 JIS C 8918

General rules of transmitting and/or receiving 35 modules for middle and high speed ber optic JIS C 6112 transmission Measuring methods of transmitting and/or 36 receiving modules for middle and high speed JIS C 6113 ber optic transmission 37 General rules of optical modulator modules Measuring 38 modules method of optical modulator JIS C 6114-1 JIS C 6114-2 JIS C 6115-1 JIS C 6115-2

Nov.20.1997 Jan.20.2006 Jan.20.2006 Jan.20.2006 Jan.20.2006 Feb.20,1998 Mar. 20, 2007 Feb.20,1998 Feb.20,1998 Jan.20,2006 Aug.20,2001 Aug.20,2001

39 General rules of pin-FET modules 40 Measuring methods of pin-FET modules Optical Ampliers

1 Generic specication of optical ber ampliers JIS C 6121 Optical amplires - Part 5-2: Qualication 2 specications - Reliability qualication for JIS C 6121-5-2 optical ber ampliers Optical ber ampliers - Test methods - Part 1: 3 JIS C 6122-1 Test methods for gain parameters 4 Optical ber ampliers - Test methods - Part 2: JIS C 6122-2 Test methods for optical power parameters

revised.Feb.20, 1998

Optical ampliers - Test methods - Part 3-2:Noise 5 gure parameters - Electrical spectrum analyzer JIS C 6122-3-2 method 6 Optical ber ampliers- Test methods- Part 3:Test JIS C 6122-3 methods for noise gure parameters

revised.Sep.20, 2005 revised.Feb.20, 1998 revised.Sep.20, 2005 revised.Feb.20, 1998 revised.Sep.20, 2005 Sep . 1, 1995 revised.Sep.20, 2005

Optical ber ampliers- Test methods- Part57 1:Test methods for reectance parameters- JIS C 6122-5-1 Optical spectrum analyzer test method 8 9 Optical ber ampliers - Test methods - Part 6: JIS C 6122-6 Test methods for pump leakage parameters Optical ber ampliers - Test methods - Part 7: JIS C 6122-7 Test methods for out-of-band insertion loses

9 Feb.20,1998 Feb.20,1998

Outdoor measuring mehtod of output power for JIS C 8919 crystalline solar cells and modules 10 Outdoor measuring mehtod of output power for crystalline solar cells and modules JIS C 8919 (Amendment1) Measuring method of equivalent cell temperature 11 for crystalline solar cells by the open-circuit JIS C 8920 voltage Secondary reference amorphous solar cells JIS C 8931 12 Secondary reference amorphous solar cells JIS C 8931 (Amendment1) Secondary submodules refernce amorphous solar JIS C 8932

Optical ampliers - Test methods - Part 10-1: 10 Multichannel parameters - Pulse method using JIS C 6122-10-1 Mar. 20, 2007 an optical switch and optical spectrum analyzer Optical ampliers - Performance specication 11 template - Part 1: Optical ber ampliers for JIS C 6123-1 digital applications Optical ampliers -- Performance specication 12 template -- Part 2: Optical ber ampliers for TS C 6123-2 analogue applications Optical ampliers - Performance specication 13 template - Part 4: Optical amplires for JIS C 6123-4 multichannel applications Optical ampliers -- Maximum permissible 14 optical power for damage-free and safe use of JIS TR C 0047 optical ampliers Optical Measuring Instruments 1 Measuring methods for laser output power 2 3 JIS C 6180 Power and energy measuring detectors, JIS C 6181 instruments and equipment for laser radiation Test methods of optical power meters for laser JIS C 6182 beam JIS C 6183 Jan.20,2005

Sep.20,2005 Sep . 1, 1995 revised.Sep.20, 2005 Sep . 1, 1995 revised.Sep.20, 2005 Sep . 1, 1995 revised.Sep.20, 2005 Sep . 1, 1995 revised.Sep.20, 2005

Jan.20,2006

Jan.20,2008

13

Secondary refernce amorphous solar submodules JIS C 8932 (Amendment1) Solar simulators for amorphous solar cells and JIS C 8933 modules Solar simulators for amorphous solar cells and JIS C 8933 modules (Amendment1) Measuring method of output power for JIS C 8934 amorphous solar cells Measuring method of output power for JIS C 8934 amorphous solar cells (Amendment1)

Oct. 1. 2007 14 Aug. 1, 1991 Jan. 1, 1995 Aug. 1, 1991 Sep. 1, 1992 15

4 Test methods of ber-optic spectrum analyzer

59

Solar Cells 16

Measuring method of output power for JIS C 8935 amorphous solar modules Measuring method of output power for JIS C 8935 amorphous solar modules (Amendment1) Measuring method of spectral response for JIS C 8936 amorphous solar cells amd modules

Sep . 1, 1995 revised.Sep.20, 2005 Sep . 1, 1995 revised.Sep.20, 2005

Optical Disks

Volume and le structure of high-density optical 4 disks using non-sequential recording for JIS X 0609 information interchange Volume and le structure of DVD read-only 5 JIS X 0610 Disc 6 120 mm DVD - Read only disk 7 80 mm DVD - Read only disk 8 120 mm DVD Rewritable Disk (DVD-RAM) 9 Case for 120 mm DVD-RAM Disks JIS X 6241 JIS X 6242 JIS X 6243 JIS X 6244

Feb.20,1998 Mar.25,2006 revised.Dec.20, 2004 revised.Dec.20, 2004 Jan.20, 1998 Jan.20, 1998 Mar.20,1999 Aug.20,2005 Aug.20,2005 Jan. 20, 2007 Jan. 1, 1991 Aug. 1, 1991 Sep. 1, 1992 Aug. 1,1996

17 Measuring method of spectral response for amorphous solar cells amd modules JIS C 8936 (Amendment1) Temperature coefcient measuring methods of output voltage and output current for amorphous JIS C 8937 solar cells and modules Temperature coefcient measuring methods of output voltage and output current for amorphous JIS C 8937 solar cells and modules (Amendment1) Environmental and endurance test methods for JIS C 8938 amorphous solar cell modules Environmental and endurance test methods for JIS C 8938 amorphous solar cell modules (Amendment1) Amorphous solar PV modules Amorphous solar PV modules (Amendment1) JIS C 8939 JIS C 8939

Sep . 1, 1995

10

18

80 mm (1.23 GB/side) and 120 mm (3.95 GB) JIS X 6245 DVD-Recordable-Disk (DVD-R)

revised.Sep.20, 2005 Nov. 1, 1995 revised. Sep. 20, 2005 Nov. 1, 1995 revised. Sep. 20, 2005 Nov. 1, 1995 revised. Sep. 20, 2005 Mar. 20. 2009 Mar. 20. 2009 Mar. 20. 2009 Mar. 20. 2009 Mar. 20. 2009 Mar. 20. 2009 June.20,2004 June.20,2004

120 mm (4.7 Gbyte per side) and 80 mm (1.46 11 Gbyte per side) DVD rewritable disk (DVD- JIS X 6246 RAM) Cases for 120 mm and 80 mm DVD-RAM 12 JIS X 6247 disks Information technology - 80 mm (1.46 Gbytes 13 per side) and 120 mm (4.7 Gbytes per side) DVD JIS X 6248 re-recordable disk (DVD-RW) 14 130 mm Optical disk cartridges, write-once, for JIS X 6261 information interchange

19

20

Outdoor measuring method of output power for JIS C 8940 amorphous solar cells and modules 21 Outdoor measuring method of output power for amorphous solar cells and modules JIS C 8940 (Amendment1) 22 Secondary reference component cells 23 JIS C 8941 Solar simulator for multi-junction solar cells and JIS C 8942 modules

130 mm Rewritable optical disk cartridges for 15 JIS X 6271 information interchange 16 90 mm Rewritable and read only optical disk JIS X 6272 cartridges for information interchange

Information technology -Data interchange on 130 17 mm optical disk cartridges - Capacity: 1.3 JIS X 6273 gigsbytes per cartridge Information technology - 130 mm optical disk 18 cartridges for information interchange - Capacity: JIS X 6274 2 Gbytes per cartridge Information technology - Data interchange on 90 19 mm optical disk cartridges - Capacity: 230 JIS X 6275 megabytes per cartridge Information technology - 130mm optical disk 20 cartridges for information interchange - Capacity: JIS X 6276 2.6 Gbytes per cartridge Information technology - Data interchange on 21 90 mm optical disk cartridges - Capacity: 640 JIS X 6277 Mbytes per cartridge Information technology - 130mm optical disk 22 cartridges for information interchange - Capacity JIS X 6278 : 5.2 Gbytes per cartridge 23 Data interchange on read-only 120 mm optical JIS X 6281 data disks (CD-ROM)

Indoor measuring method of output power for 24 multi-junction solar cells and modules JIS C 8943 (Component reference cell method) 25 Measuring methods of spectral response for JIS C 8944 multi-junction solar cells

Oct.20,1997

Oct.20,1997

Temperature coefcient measuring methods of 26 output voltage and output current for multi- JIS C 8945 junction solar cells and modules 27 Outdoor measuring method of output power for JIS C 8946 multi-junction solar cells and modules

Jul.20.1998

Jul.20.1998

Crystalline silicon terrestrial photovoltaic (PV) 28 modules - Design qualication and type JIS C 8990 approval 29 Optical Disks 1 Thin-lm terrestrial photovoltaic (PV) modules JIS C 8991 - Design qualication and type approval Volume and le structure of CD-ROM for JIS X 0606 information interchange Information technology - Volume and le structure of write-once and rewritable media JIS X 0607 using non-sequential recording for information interchange Technical corrigendum 1 to Volume and le structure of write-once and rewritable media JIS X 0607 using non-sequential recording for information interchange

Mar.20,2001 revised.Jan.20, 2006

revised.Oct.20, 1998

Mar. 1,1996

Information technology - Data interchange on 90 mm overwritable and read only optical disk 24 JIS X 6291 cartridges using phase change - Capacity: 1.3 Gbytes per cartridge 25 Information technology - Data interchange on 120 mm optical disk cartridges using phase JIS X 6292 change PD format - Capacity: 650 Mbytes per cartridge Volume and le structure of DVD read only TR X 0006 Disc TR X 0075

Jul.20,1998

Jul.20,1998

revised.Mar. 20,2001 26 Oct. 20,1997

Sep.20,2005 Dec.1,2004

Volume and le structure of read-only and write3 one compact disk media for information JIS X 0608 interchange

37 UDF Compliance Test Tool

In order to continually lead the activities for standardization of ber optics, the Fiber Optics Standardization Committee plays a role of planning, promoting, and updating the vision of standardization under the Standardization Technical Committee, which is responsible for coordination and orientation of all ber optics standardization activities. The committee also coordinates the issues in standardization, including the efforts to reect domestic requirements in international standards. Each standardization committee prepares and proposes JIS drafts. As a result of the WTOTBT Agreement, however, there is strong demand for conformity between JIS and international standards, indicating the importance of reecting newly developed Japanese technologies in international standards (e.g. IEC standards). Being aware of the importance of this requirement, the committee focused its efforts to solve problems and make strategic proposals in connection with
60

2.

Fiber Optics Standardization Committee

JIS and international standardization this scal year. It decided to publicize the organization standards (OITDA standards) and complementary technical papers (TPs), and will promote publication to expedite standardization. This scal year, the committee formulated three subcommittees to undertake activities: Administrative Advisory Subcommittee, Dynamic Module Subcommittee, and IntraBuilding Optical Wiring System Subcommittee. 2.1 Administrative Advisory Subcommittee 2.1.1 Purpose and activities For more efcient standardization (JIS), the subcommittee implements standardization (JIS) strategies, identies problems and examines improvements for efcient preparation of JIS drafts, and promotes the publication of OITDA standards and technical papers (TPs) which have already started, in order to support international standardization.

Standardization

Table 2 List of OITDA Standard and List of TP

Standardization Committees Optical Passive Components Standardization Committee Optical Passive Components Standardization Committee Optical Disk Standardization Committee (Format Subcommittee) Standardization Committees Optical Passive Components Standardization Committee Optical Passive Components Standardization Committee Optical Disk Standardization Committee (Format Subcommittee) Optical Disk Standardization Committee (Format Subcommittee) Optical Disk Standardization Committee (Format Subcommittee) Optical Disk Standardization Committee (Format Subcommittee) 4 1 Title of Standards No. Publishing date

Polarization mode dispersion measurement using OITDA-PD01 polarization phase shift method 2004 (Ed.1)

2000.08.26

Chromatic dispersion measurement using OITDA-PD02 2 polarization phase shift (PPS) method for passive 2006 (Ed.1) optical components OITDA-DC01 2005 (Ed.1)

2002.08.28

3 Emulation System for Optical Disk

2001.07.24

Title of Standards(TP)

No.

Publishing date

TP01/BW Optical ber distribution system for detached houses (=TP- BW01) in FTTH 2007 (Ed.1) TP02/BW Optical ber distribution system for apartment (=TP-BW02) houses in FTTH 2007 (Ed.1) TP03/BW Plastic optical ber distribution system for customer (=TP- BW03) premises 2007 (Ed.1)

2003.07.05

2003.07.05

2003.07.05

Technical paper of investigation of high-power TP04/SPPD 7 reliability for passive optical components for optical 2008 (Ed.1) communication application Investigation on operational vibration and TP05/SPDM 8 mechanical impact test conditions for optical 2008 (Ed.1) modules for telcom use Investigation on operational vibration and TP06/SPDM 9 mechanical impact test conditions for optical 2008 (Ed.1) modules for telcom use

2004.08.27

2004.08.27

2004.10.08

2.1.2 Activities of this fiscal year (1) Basic stance in standardization The following policies were conrmed for continuation as basic policies for standardization strategy. (a) JIS standards are only established for high-priority IEC standards, and are not necessarily established if they are infrequently used or have little necessity in Japan. These can be classied as OITDA standards, TPs, or IEC standards not established as Japanese language standards, according to its level. (b) The direction at the time of creating new IEC standards is from OITDA IEC. (c) JIS revisions and reviews will basically conform to the concepts of (a). Issues related to IEC standards and JIS copyrights must be resolved before putting the above policies into practice. Usage license must be negotiated in order to set IEC standards unchanged as OITDA standards. It is possible to assert copyrights if the OITDA standard comes rst, but this is difcult after changes such as revisions. Some JIS that have been abolished may be standardized as OITDA standards, and such cases also require arranging copyright. However, we have been informed that in case of IEC standards that have been established for JIS, the copyrights for an IEC standard will lapse at the time of abolition of the IEC standard. (2) Examination related to enhancing completion of a JIS draft
61

Since it was determined that improving the quality of drafts and improving the degree of completion were the shortcut to improving the efciency of creating JIS drafts and reducing the period up to public notication, a questionnaire survey was conducted regarding such measures for the related standardization committees. The proposed measures are given below. Collect data of problematic cases of the past and make them available for inspection so that information on revisions by each standardization committees can shared. Build a database as early as possible. Establish a lateral check system for terminology checks, etc. for standardization committees. Assign and develop professionals within OITDA for correcting the JIS drafts. Promote the participation in JIS drafting workshops conducted by the Japanese Standards Association, and have OITDA hold workshops. In keeping with the above policies, the secretariat of the subcommittee implemented the collection of all matters indicated until now. The indicated matters included a very wide range of matters such as problems in usage of terminology, problems in formats, easily understood explanations, etc. and their arrangement is progressing. (3) OITDA standards and technical papers This scal year, one new OITDA standard was established and three new TPs were published. Consequently, a total of 10 documents were published including four OITDA standards and six TPs. 2.2 Activities of Dynamic Module Subcommittee Optical communication networks have become increasingly exible with progressive developments typied by 10 - 40 Gb/s long distance large capacity systems in the core systems and ROADM (Recongurable Optical Add/ Drop Multiplexing) in metro systems. In conjunction with this trend, dynamic modules (DM), which are optical subassemblies capable of dynamically controlling network conditions such as optical path connection status and optical dispersion characteristics, are being developed for commercialization. IEC is also conducting standardization activities for the TC 86/SC 86C/WG 5 Dynamic Module, and this subcommittee is conducting activities as the corresponding JIS standardization organization for IEC dynamic module standardization. The major deliberation results in this scal year are given below. (1) Japan was placed in charge of documents for the Dynamic modules - Reliability qualication (IEC 62343-2) at the IEC s San Diego meeting in March 2008, and this subcommittee carried out a review. The created draft was put forward in the IEC s Kyoto meeting in October, 2008 and it was decided to describe only the document number and conditions of Operational vibration and mechanical impact test (IEC 62343-5-3) for the reliability standards of optical components that make up a dynamic

module. It is currently awaiting an NP circular. (2) For SW/HW interface standards (IEC 62343-4-1), a questionnaire survey concerning a tunable dispersion compensator interface was conducted for both the provider (vendor) as well as the user. The results of this questionnaire were presented in the Kyoto meeting and it was reconrmed that the tunable dispersion compensator is appropriate as an examination subject, but since major vendors were not present at the meeting, it was decided to present the results again in the next IEC meeting to be held in San Diego in March 2009. (3) Japan was put in charge of Dynamic modules - Test methods - Dynamic gain tilt equalizer - Response time measurement (IEC 62343-5-1) and corrections were made through a CDV circular and at the Kyoto meeting. The FDIS circular is currently awaited. (4) For the GDR test methods (IEC 62343-5-2), the technical report of results of round robin tests of group delay ripple measurement for a tunable dispersion compensator was published as an OITDA technical paper and proposed along with the IEC s proposal document for measurement methods at the Kyoto Meeting. The phase ripple measurement method was included in IEC 61300-3-38 at this meeting, and Japan was placed in charge and created a draft. The proposal to SC 86B/WG 4 is scheduled after deliberations at the next IEC meeting to be held in San Diego (SC 86B/WG 5). (5) For Operational vibration and mechanical impact test (IEC 62343-5-3), a technical report was published as an OITDA technical paper and presented to the Kyoto Meeting together with IEC s proposal document for measurement methods. At this meeting, creation of a new standards document was decided to be unnecessary, the conditions of vibration impact test were incorporated in the Dynamic modules - Reliability qualication (IEC 62343-2), and dynamic module reliability standards were corrected. (6) A technical report concerning Technical reports - Software and hardware interface of dynamic modules (IEC 623436-2) was drafted and NP proposal was set forward. Since there was no comment from any country during the Kyoto Meeting, a continuation DTR was circulated. (7) In case of GDR round robin test results of TDC (IEC 62343-6-3), an OITDA technical paper Group Delay Ripple Measurement Method for Tunable Dispersion Compensators was published. The contents were drafted into a document as a Technical Report of GDR test method in the Kyoto Meeting (SC 86B/WG 5), and these indicated matters were reected in the draft document in this meeting. (8) In case of operational vibration and mechanical impact evaluation technical report (IEC 62343-6-5), the evaluations and simulation results related to vibration impact test during operation were summarized and published as OITDA technical paper Investigation on
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operational vibration and mechanical impact test conditions for optical modules for telecom use. A draft of these contents was presented in the Kyoto Meeting (SC 86C/WG 5) together with operational vibration and mechanical impact test (IEC 62343-5-3). A revised version with indicated matters duly reected was sent to IEC. Deliberations are scheduled for the next SC86C meeting to be held in San Diego. (9) Japan was put in charge of Dynamic module FMEA (Failure Model Effect Analysis) (IEC 62343-6-6) and presented its technical report in the Kyoto Meeting. A draft with corrections made as per the indications of this meeting was circulated as the DTR and is scheduled to be published as a TR by the year 2010 at latest. (10) A catalog investigation was carried out once again through the web for OCM/OPM market research. As a result of this investigation, it was found that there is no uniformity in the performance items and terminology between the manufacturers. If measurement conditions of each item and terminology are claried, it will be advantageous to both the manufacturers as well as users. A list of terminology denitions specifying performance was obtained from domestic manufacturers. In the future, this subcommittee is scheduled to arrange the denitions of performance items and present them to IEC. 2.3 Intra-building Optical Writing System Subcommittee According to the Ministry of Public Management, Home Affairs, Posts and Telecommunications, broadband subscribers reached 29.76 million in September 2008, the number of optical FTTH users reached 13.76 million and the number of ADSL subscribers exceeded 11.97 million (FTTH passed ADSL in June 2008). The information wiring in residential complexes for getting various FTTH services such as internet, IP telephone and video, etc. varies depending on the contents of the services that the residents want to use or on whether the wiring work is conducted when constructing new buildings or for existing buildings. Therefore, the residents and housing providers (e.g. housing constructors and designers) themselves need to understand the requirements of information wiring for the desired services and must maintain the wiring environment such as piping, etc. Consequently, the Intra-Building Optical Wiring Subcommittee is working on standardizations related to optical wiring systems that are used by residents or housing providers of detached homes and housing complexes for high-speed wideband data and video services. 2.3.1 Revision of OITDA technical papers (First Edition) Based on the three technical papers released on the OITDA web site in July 2007, the subcommittee conducted surveys on the latest technological trends of optical ber distribution systems for buildings and the actual state of construction, and prepared the revised draft. The second edition is expected

Standardization

to be published early in the next scal year. Most optical line installations are in existing homes, and they have been especially enhanced in the second edition. Other changes are given below. (1) Technical paper Optical ber distribution system for detached houses in FTTH : Adds descriptions of methods of laying optical lines, in which residents are strongly interested, and the types and features of the indoor optical wiring methods and the new wiring products used in these methods, etc. (2) Technical paper Optical ber distribution system for apartment houses in FTTH : Adds performance standards related to optical loss and return loss, wiring conguration examples including video systems and information related to latest equipment instances, latest service instances, etc. (3) Technical paper Plastic optical ber distribution system for customer premises : The composition was matched to the above 2 and the contents were also enhanced. 2.3.2 JIS Technical Specification (TS) JIS/TS C 0017 Optical fiber distribution system for customer premises An application was made for extending the JIS/TS C 0017 (expiration date: January 2009) and the expiration date was extended till March 19, 2012. Result of last year s questionnaire survey (Present and Future Subjects on Optical Wiring System in Building and Home) was reported by the Technical Committee on Optical Fiber Technologies of The Institute of Electronics, Information and Communication Engineers (March 6, 2009). Technical documents and status of the activities of the subcommittee were also presented. 2.3.3 Information and topics on other standardization organizations (1) Technical Standardization Committee on Information Technology Generic Cabling System, Japan Electronics and Information Technology Industries Association (JEITA) JIS draft of ISO 14763-3 Testing of optical ber cabling was created. JIS/TS C 0017 (Optical ber distribution system for customer premises) is The only technical document in which all optical wirings within a building are summarized and used as reference document by each standardization group of the committee. (2) NPO Optical Fiber Fukyu Suishin Society The Society is scheduled to prepare and publish a guidebook of advanced information cabling facilities. This guidebook is for standardization of optical cabling facilities according to the applications. Although the Society is currently collecting information from all concerned parties, the publication time has not been decided. The subcommittee is also paying attention, as it is very relevant. (3) NPO, Advanced Info-Communication Promotion
63

Community Last autumn, the Community sponsored the Information Network Wiring skill contest at the domestic Skill Olympics. The activity of this community is closely related to the subcommittee s areas of interest. (4) Information and Telecommunication Engineering Association (ITEA) Optical Communication Construction Skills Competition sponsored by ITEA was held at Pacico Yokohama in July last year. The feature of this competition was the optical line opening and construction game held only for women. Women engineers received favorable review. (5) ISO/IEC JTC1 SC25 WG3 The nal draft (with channel regulations for up to 1 GHz) of Premises information wiring system (ISO/IEC 11801: Information technology- Generic cabling for customer premises) was approved and scheduled for issue during 2009. Investigative research was carried out continuously by the Optical Fiber Standardization Committee from FY 1981, to prepare domestic standards for optical bers with the aim of securing compatibility, viability and reliability of optical bers and related components, devices, etc. 14 optical ber related JIS were established for the rst time in FY 1988, concerning general rules (common items), test methods, individual optical bers standards, etc., mostly for optical ber technology consisting of silica glass and multicomponent glass. From then until the end of 2008, a total of 30 such JIS have been established. Moreover, it is necessary to complete the work of reorganizing the standards documentation system of IEC in relation to the international standards, and following this match the JIS documentation system with IEC. Therefore, in this scal year, besides establishing JIS corresponding to new international standards, timely standardization activities were carried out in connection with the optical industry to move forward with conforming the document system of IEC. 3.1 Examinations Related to Standardization of Optical Fibers In recent years the communication transmission speed using optical bers has reached high speeds of 40 Gbps, and in case of high speeds and long distance transmission, the polarization mode dispersion has come under close scrutiny as a limiting factor for transmission range and transmission speed, etc. Polarization mode dispersion is a phenomenon that generates propagation time difference between 2 cross polarization mode factors in the optical bers due to slightly elliptical core of the optical ber or anisotropic stress acting on the optical ber, etc. Preparation of new JIS drafts for Optical bres - Measurement methods and test procedures - Polarization mode dispersion (IEC 60793-1-1: 2002 and IEC 60793-1-48: 2007 ) was started with these conditions in the background. The new JIS by which three test methods

3.

Standardization of Optical Fibers

(xed analyzer measurement method, stokes evaluation method, and interferometry method) are brought together was scheduled in this examination. Preparation of a revised JIS draft was also started for JIS C 6835 Silica glass singlemode optical ber in order to conform with the revisions in the IEC international standards (IEC60793-2-50: 2008). Three types of optical ber strands were added in this revised draft, [1] Silica glass single mode wideband non-zero dispersion-shifted optical ber 8.5/125, [2] Silica glass single mode low OH and bending loss insensitive optical ber 9/125 and [3] Silica glass single mode bending loss insensitive type optical ber 6.5/125. Whether to delete or continue silica glass single mode dispersion at optical ber 7/125 that is currently included in the JIS will be decided after examining the current distribution status in the industry. 3.2 Examinations Related to Standardization of Optical Fiber Cables In the standardization related to optical ber cables, the necessity of standardization of three optical ber cables ([1] simplex and duplex indoor optical ber cables for use in premises cabling (corresponding to IEC 60794-2-11), [2] multi-ber indoor optical distribution cables for use in premises cabling (corresponding to IEC 60794-2-21) and [3] optical ber ribbon cable for use in premises cabling (corresponding to IEC 60794-2-31), as product standard group for indoor optical bers, was judged to comparatively high from the viewpoint of current popularization of FTTH. Preparation of JIS draft was pursued with priority on conformance of the above three with the IEC international standards. And since the preparation of these scheduled standards was completed (report is due), crafting of JIS draft for Outdoor duct / directly buried optical ber cable (corresponding to IEC 60794-3-10) and Self-supporting aerial optical ber cables (corresponding to IEC 60794-320) as product standard group of outdoor optical bers was started from this scal year. Although revisions are being put forward currently for corresponding IEC standards, deliberations on test conditions and errors in measurement of tensile test, lateral pressure test, temperature test, methods of assuring characteristics of multi-ber and long-term/short term loading denitions, etc. have been completed, and international standards publication procedures (FDIS) have been started and these revised contents are also scheduled to be reected. 3.3 Examinations Related to Standardization of Polarizationmaintaining Optical Fiber Although Japan has independently proceeded with standardization of polarization-maintaining optical bers until now, the translation into English of JIS standards documents related to JIS C 6871 Test methods for structural parameters of polarization-maintaining optical bers and JIS C 6872 Beat length measurement of polarization64

maintaining optical bers was completed in this scal year for submitting to IEC. IEC international standardization is scheduled for the future in cooperation with the concerned parties of IEC SC 86A. With the steady spread of FTTH service in Japan, the total number of subscribers exceeded 13 million by end of June 2008. The rate of subscriber increase continues to be prominent in the world. Under such conditions, there has been a marked shift in the trend of communication organizations themselves towards a trend where the optical components used in communication systems are being manufactured by many manufacturers and individual users are using electronic components for direct utilization. Therefore, standardization is a key for the dissemination of optical connectors because of application components. Based on the WTO/TBT agreement, it has become necessary to achieve conformity between JIS and the corresponding IEC standards because Japan has been a world leader in the development of optical connectors and many IEC standards are based on JIS. However, there are apparent differences between the formulas of JIS and IEC standards, and as such, the committee has carried forward the work of reviewing the JIS standards document structure and conforming the JIS standards to the IEC standards. In addition to the conformation of individual standards, in the future it will be necessary to actively promote standardization as JIS or technological investigations of various next generation optical connectors in view of the technical trends. 4.1 Survey of Standardization Trends and Consideration of JIS Drafts The main target of the working groups of the Optical Connectors Standardization Committee since FY 2004 has been to make systems that conform completely to IEC, and the working groups have been organized and have deliberated for each IEC document organization (general principles / general rules, interface standard, performance standard, optical interface standard tests and measurement methods, etc.). Four years of activities of this organization led to the nalization of a new JIS document organization and a rough determination of the way forward. Consequently, working groups were organized for each technical eld similar to the working groups prior to FY 2003, and these working groups carried out continuous detailed deliberations on individual standards, and investigated and examined draft proposals for the following items. Investigations and preparations of JIS draft Investigations for standardization of performance standards Standardization of optical compatibility Preparation of draft for Optical interface standard single mode non-angled physically contacting bers

4.

Standardization of Optical Connectors

Standardization

(JIS version of IEC 61755-2-1) Preparation of draft for Optical interface standard single mode angled physically contacting bers (JIS version of IEC 61755-2-2) Preparation of draft for Optical interface, 2,5 mm and 1,25 mm diameter cylindrical full zirconia PC ferrule, single mode ber (JIS version of IEC 61755-3-1) Preparation of draft for Optical interface, 2,5 mm and 1,25 mm diameter cylindrical full zirconia ferrules for 8 degrees angled-PC single mode bers (JIS version of IEC 61755-3-2) Investigations for standardization of individual standards Investigations for revised draft proposal of individual standards of F04 type optical ber connectors (SC) Investigation for revised draft proposal of individual standards of F12 type multi-core optical ber connectors (MT) Standardization of mechanical interfaces Preparation of draft for mechanical interface standard of SC connectors (JIS version of IEC 61754-4) Preparation of draft for mechanical interface standard of MT connectors (JIS version of IEC 61754-5) Standardization of test and measurement procedures Review of IEC-JIS association list Investigations for draft for grinding angle of ferrule for multi-core optical connectors and optical ber position measurement (corresponding to IEC 613003-30) Investigations for preliminary draft for repeated mating test (JIS corresponding to IEC 61300-2-2) Investigations for a draft for measuring the eccentricity of the apex of the edge of the spherical grinding ferrule (JIS corresponding to IEC 613003-15) Investigations for draft for measuring the accuracy of the key location of the optical connector having polarization-maintaining optical bers (JIS corresponding to IEC 61300-3-24) Investigations for standardization of external examination of receptacle edge Standardization of optical transceiver modules wiggle test methods Survey and research of standardization Conrmation of compatibility of 12 core MPO connectors (Grade B) 4.2 Liaison Activities OITDA has maintained liaison relations with the following committees to carry out deliberations. IEC/TC 86/SC 86B
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Optical Passive Components Standardization Committee Standardization of safety and reliability of optical components/ modules for high quality optical transmission equipment for broadband optical networks and FTTH Follow-up Committee (JSA)

5.

The committee set up four working groups (WGs) to standardize new optical passive components, prepare draft revisions for existing JIS standards, conduct investigations and studies on tests and measurement methods of optical passive components as well as JIS performance standards, and investigate international standardization trends. 5.1 WG 1: Investigation of Standardization of Optical Elements The committee completed the draft in FY 2007, and brought forward the draft of new general specications of polarizer and retarder and revised draft of general specications of interference lter for JIS deliberations. Out of the three optical elements corresponding to the tests and measurement methods, the committee moved ahead with the work of improving the percentage of completion of the committee draft on test methods for interference lter and polarizer. 5.2 WG 2: Investigation of Standardization of Tests and Measurement Methods JIS documentation of IEC 61300 series that species the tests and measurement methods of optical passive components including optical connectors was carried out in cooperation with the Optical Connector Standardization Committee and IEC 61300-2-22 (Tests - Change of temperature), 2-46 (Tests - Damp heat, cyclic), 2-47 (Tests - Thermal shocks), 3-2 (Examination and measurements Polarization dependent loss in a single-mode bre optic device) were translated to advance the JIS draft preparation work. Contents specied in 61300-2-12 (Tests - Impact), 2-21 (Tests - Composite temperature-humidity cyclic test), 2-47 (Tests - Thermal shocks), 2-48 (Tests - Temperaturehumidity cycling), 3-2 (Examination and measurements Polarization dependent loss in a single-mode bre optic device), 3-3 (Examinations and measurements - Active monitoring of changes in attenuation and return loss), 3-7 (Examinations and measurements - Wavelength dependence of attenuation and return loss of single mode components), 3-9 (Examinations and measurements - Far-end crosstalk), 3-43 (Examinations and measurements - Mode transfer function measurement for bre optic sources) that are under deliberation in IEC were examined, and comments related to corrections and additions, etc. were collected and the support of the domestic committee was provided so that these corrections and additions are reected in the

Optical Passive Components Standardization Committee

deliberations of IEC. 5.3 WG 3: Investigation of Individual and Performance Standards The committee draft related to JIS individual standards of single mode optical ber pigtail type xed optical attenuator and optical circulator corresponding to the performance standards of optical passive components of IEC was moved forward to the JIS deliberation stage. Preparation of JIS individual standard drafts for single mode optical ber pigtail type optical isolator, C/L band WDM device and 980/1550 nm WWDM device was started. At the same time, required support was given to the domestic committee for crafting the drafts for various performance standards of 1x2/2x2 optical switches, OADM and optical lters that are being prepared by the IEC. 5.4 WG 4: Investigation of General Rules, General Specifications and Reliability Related Standardization 5.4.1 JIS standardization and support and comments related to IEC general rules deliberations In case of general rules and specications of devices, the committee has prepared the JIS general specications of WDM devices and has gathered comments, etc. for the domestic IEC committee on the draft of general rules of optical power control components, optical branching devices, optical switches, optical isolators, optical lters, dispersion compensators, WDM devices, optical circulators, wavelength switches, etc. that are currently under deliberation or being formulated in IEC. 5.4.2 High power evaluation of optical passive components (National research & development for international standardization) As a result of standards authentication work Standardization of safety and reliability of optical components/ modules for high quality optical transmission equipment for broadband optical networks and FTTH started by the Ministry of Economy, Trade and Industry in FY 2005, the Investigations concerning the reliability of high-power of optical passive components for communication was put together as a technical document by OITDA, and released on the web. Moreover, ways of moving forward with standardization of testing methods related to high-power were proposed to IEC. 5.5 Trends of Standardization in International Standardization 5.5.1 Trends of deliberations at IEC IEC/TC 86/SC 86B promotes the standardization of optical connectors and optical passive components, and held meetings in Prague (Czechoslovakia) in April 2008 and in Kyoto in October of the current scal year. SC 86B is made up of three WGs: WG4 (tests and measurement methods), WG6 (optical connecting devices) and WG7 (optical passive components).
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Although WG7 discusses the general rules and performance standards, the discussion in the current scal year were centered on the performance standards and on the maintenance of general rules issued in scal year 2000-2001. As of February 2009, this WG circulated 18 documents including maintenance documents (6 documents for general rules and specications and 12 documents for performance standards). Moreover, 1 document for general rules and specications and 6 documents for performance standards were queued at the proposal stage for deliberations (Working Draft). WG4 deliberated on the 61300 series (61300-2 series species the tests and 61300-3 species the measurement methods), and as of February 2009, it had circulated 8 deliberation documents related to measurement methods of optical passive components. 5.5.2 Trends of standardization at ISO (TC 172/SC 9/WG 7) ISO/TC 172/SC 9/WG 7 has undertaken the standardization of optical passive components related to lasers, but there was only one document under deliberation by the end of FY 2008 and except for the review of WD, there has been no progress since the NP was passed in December 2006. As such, the WG7 conference was discontinued at the SC 9 Berlin Meeting in June 2008. 5.6 Future Tasks In the days ahead, the committee draft created regarding the test methods for optical elements such as interference lter (revision) and polarizer, etc. is scheduled to be put forward for JIS deliberations after enhancing the level of completeness of the draft. Hereafter, the preparation of drafts for individual JIS standards of optical components such as optical isolators and WDM devices, which are also highly needed in Japan, will be promoted based on the performance standards already published by IEC. JIS standardization of the tests and measurement methods of the IEC 61300 series expedited in cooperation with the Optical Connector Standardization Committee will be continued. Also, standardization will be expedited with the aim of replacing the tests and measurement methods specied by the already established JIS C 5901 (Test methods of passive devices for bre optic transmission) and JIS C 5961 (Test methods of connectors for optical ber cables) with tests and measurement methods corresponding to the IEC 61300 series as soon as possible in order to minimize the confusion of users. Standardization of methods for measuring the damage threshold values of optical passive components due to high power and testing methods related to high power is also very important. In addition to the preparation of JIS drafts, it is also important to reect the results of standardization activities carried out in Japan in IEC deliberations. As such, the

Standardization

committee will continue to collaborate with the Japanese National Committee of IEC to make proposals and present comments to IEC. As optoelectronic technology advances, various optical active devices are being developed and used widely in consumer products such as audio and visual appliances as well as in key industrial components such as optical transmission systems. Under these circumstances, promotion of standardization of optical active components is a must for [1] Reducing the equipment cost, [2] Advancement of the industry to an even higher level to successfully compete worldwide in the area of its technology and [3] Utilization of the technology more efciently. The JIS for optical active components has been started based on the survey and research activities conducted by OITDA since FY 1981, and those are mainly through the preparation of JIS drafts for a series of active components for optical transmission. Thereafter, reviews and corrections were made as needed and 16 standards were added in FY 2008 and as of now 40 kinds of JIS have been enacted or revised. 6.1 Outline of Deliberations Almost all the standards that have been currently standardized by IEC following the examinations up to FY 2007 have been standardized for JIS. In the future, standardization of new optical modules for transmission and photoelectronic integrated devices corresponding to wavelength division multiplexing transmission systems, high-speed internet or high speed optical subscriber systems, etc. will be required. Accordingly, standardization items based on the results of follow-up questionnaire surveys concerning the standardization needs of FY 2007 were determined in FY 2008. Moreover, the following were executed continuously with the aim of standardizing the JIS in line with the international standardization trends: [1] Watching whether the revision of IEC documents related to conformance of testing temperatures and environment categories of active components follow our way of thinking, [2] Conducting surveys of international standardization trends of optical active components by IEC/SC 86C/WG 1, WG 3, WG 4 and IEC/SC 47E. The progression of the survey and research by the Optical Active Components Standardization Committee and the outline of the results obtained in FY 2008 are given below. (1) Investigations were carried out for determining the items that need to be standardized in accordance with the new standardization needs of optical active components and for preparing a rough JIS draft and the following results were obtained. After FY 2009, it will be necessary to carry out further deeper investigations on the basis of these results and prepare a standardization draft suitable for the standardization needs of the market.
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6.

Standardization of Optical Active Devices

i) Tunable lasers for DWDM: Investigation drafts were prepared for General rules of tunable laser modules for DWDM transmission based on the specications of optical and electric characteristics that have been strongly demanded in questionnaires about standardization of performance standards and testing and measurement methods. ii) Semiconductor optical ampliers: Parts with different testing and measurement methods were claried based on the standards of optical ber ampliers, and a policy to expedite the investigations in cooperation with Optical Amplier Standardization Committee was adopted. iii) E/O and O/E devices for optical inter-connection: Taking into consideration the trends in standardization of related systems and the level of maturity of the technology, it was determined while carrying out investigations for standardization of testing and measurement methods, which continuous surveys will be needed to enable standardization at the appropriate time. Moreover, it also became clear during review of existing related standards JIS C 6112 and 6113 that there are problems in investigations related to duplication of standards on the system side. iv) Optical transreceivers for GPON/GEPON-OLT/ONU: Extensive surveys were conducted to study the possibility of numeric specications for performance standards of optical transceivers for GPON and GEPON, and item lists and numeric value lists were prepared. v) Semiconductor lasers for excitation of optical ampliers (including those for ber lasers): Investigations were carried out for standardization of testing and measurement methods and reliability testing methods with reference to current JIS, and drafts were prepared for reliability testing methods for which there is strong demand. (2) With regards to the revision of JIS C 5942 and 5943, a revised draft, that included blue laser diodes for optical disks, was prepared for existing JIS standards related to laser diodes for recording and playback, and this draft was brought up for discussion. (3) Cooperation was given to the IEC for reecting the committee s opinions in the revised IEC standards (IEC 61751) concerning Laser modules used for telecommunications - Reliability assessment, and for preparing two types of IEC deliberation documents. One of the results was the establishment of IEC 61751-2 and the other was that IEC 61751-3 is currently under discussion. (4) At the time of JIS deliberations on the nal draft prepared in FY 2007, there was a follow-up on the reinforcement of expressions and renement of drawings, and 16 JIS were standardized. Moreover, unclear points in the IEC standards text were also claried during this process, and

corrections were proposed for the IEC document during the revision period in cooperation with the Japanese National Committee of IEC. (5) Continuous surveys were conducted by IEC/SC 86C/ WG 1, WG 3, WG 4 and IEC/SC 47E on the international standardization trends of optical active components. Investigations were carried out regarding the reliability assessment methods of modules having a mixture of optical active components and passive components, and information was exchanged to correspond to the international standardization trends at once. 6.2 Future Tasks and Activity Plan The Optical Active Device Committee completed JIS drafts nearly conforming to current IEC standards related to active devices for optical transmission over 7 years from FY 2002 to FY 2008, and presented these drafts for discussions. These JIS drafts related to new optical modules for transmission and optoelectronic integrated devices were enacted as JIS in September and October 2008, and March 2009. In the coming years, the committee should perform activities so that international standardization and JIS will proceed in phase with each other to swiftly establish JIS conforming to the international standards. For this purpose, questionnaire surveys related to standardization needs were conducted in FY 2006, the results were scrutinized closely in FY 2007, and appropriate items for domestic and international standardizations were examined. As a result, some concrete requirements for future development were identied, and concrete specications of these items were expedited in FY 2008. But some parts are still lacking, so it will be necessary to conduct questionnaire surveys again at the appropriate time in order to steadily enhance the contents. Meanwhile, draft standards for small optical transreceivers for the latest super high-speed optical transmission and surface emitting lasers were proposed and deliberated in IEC, and the necessity for standardization of wavelength tunable laser modules and high-power LEDs was discussed. Considering the trends and need for standardization of these new optical active components, the committee needs to carry out timely activities for establishment of JIS in conformity with international standards. Moreover, JIS established over 10 years ago were also contained in the present JIS for optical active components. Because the technology has advanced signicantly since then, it is becoming necessary to review some of these JIS. Timely review is desired. Since the early 1990s, remarkable progress has been made in the development of optical ber ampliers, centering on the erbium doped types. International standardization of optical ampliers rst began at IEC in September 1991, then at ITU-T (former CCITT) in earnest in February 1992. In Japan, Optical Fiber Amplier Standardization Committee was established in 1994. As the amplier eld handled by
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IEC was extended to cover semiconductor optical ampliers and waveguide type optical ampliers, the committee was renamed the Optical Amplier Standardization Committee in 2001, its name today. The two major activity elds of the committee are: (1) Preparing JIS drafts through translation of relevant standards by considering the progress of deliberation for standardization at IEC and the domestic situation; (2) Understanding the trends of international standardization, and preparing proposals via the Japanese bodies on a timely basis. 7.1 Preparation of JIS Drafts (1) The following JIS Technical Report (TR) was led with the Ministry of Economy, Trade and Industry. (May 2008) Optical ampliers - General information - Part 5: Polarization mode dispersion parameter (IEC/TR 61292-5 Ed.1) (2) The following JIS draft was made and led in October 2008, and the Standards Coordination Subcommittee was held in February 2009. JIS C 6122-10-2 Optical ampliers - Test methods - Part 10-2: Multichannel parameters - Pulse method using a gated optical spectrum analyzer (IEC 6129010-2 Ed.2) JIS C 6121 Optical ampliers - Generic specication (IEC 61291-1 Ed.2) (3) The following JIS draft was prepared and led in February 2009. JIS C 6122-11-1 Optical ampliers - Test methods - Part 11-1: Polarization mode dispersion parameter - Jones matrix eigen analysis method (JME) (IEC 61290-11-1 Ed.2) (4) The following 4 JIS drafts are being prepared and were led in March 2009. JIS C 6122-1-1 Optical ampliers - Test methodsPart 1-1: Power parameters and gain parameters Optical spectrum analyzer method (IEC 61290-1-1 Ed.2.0) JIS C 6122-1-2 Optical ampliers - Test methods Part 1-2: Power parameters and gain parameters Electric spectrum analyzer method (IEC 61290-1-2 Ed.2.0) JIS C 6122-1-3 Optical ampliers - Test methods Part 1-3: Power parameters and gain parameters Power meter method (IEC 61290-1-3 Ed.2.0) JIS C 6122-3 Optical ampliers - Test method - Part 3: Noise gure parameters (Revised draft) (5) Preparation of following JIS draft was started. JIS C 6122-3-1 Optical ampliers - Test method - Part 3-1: Noise gure parameters - Optical spectrum analyzer method (Instead of the translated TR of IEC/ CDV 61290-3-1 Ed.1.0, same Pub. edition was translated and established as JIS)

7.

Optical Amplifier Standardization Committee

Standardization

(IEC 61290-3-1 Ed.1.0) (6) Translation of the following two IEC documents was started. IEC 61290-10-3 Ed.1.0 Optical ampliers - Test methods - Part 10-3: Multichannel parameters - Probe methods IEC 61290-10-4 Ed.1.0 Optical ampliers - Test methods - Part 10-4: Multichannel parameters Interpolated source subtraction method using an optical spectrum analyzer 7.2 Preparation for JIS Related Information (1) Surveys for 5 year review of existing JIS Surveys were requested by the Japanese Standards Association and one case (JIS C 6123-1: 2005) was reported to be revised. (2) Translation table of technical terminology 16 terms were added and corrections made from the activities of the current FY to the translation table created last scal year. 7.3 IEC Trend Survey, Proposals and Collaboration for IEC Activities The international trends of optical amplier standardization were surveyed with a focus on IEC/SC 86C/WG 3. (1) Existing documents Many of the existing IEC standards on optical ampliers have reached the time for review, and the corresponding JIS standards need to be revised accordingly. (a) Documents scheduled for revision IEC 61290-1-3 Ed.2 Test methods - Power and gain parameters - Optical power meter method (JIS C 6122-1) IEC 61292-4 Ed.1 Maximum permissible optical power for the damage-free and safe use of optical ampliers, including Raman ampliers (JIS TR C 0047) IEC 61292-1 Optical ampliers - Parameters of amplier components (JIS C 6121 Appendix) (b) Documents scheduled for continuation IEC 61290-5-2 Ed.2 Test methods - Reectance parameters - Electrical spectrum analyser method (JIS standardization not discussed) IEC 61290-5-3 Ed.1 Reectance tolerance test method using electrical spectrum analyzer (JIS standardization not discussed) IEC 61291-5-2 Ed.1 Qualication specications - Reliability qualication for optical bre ampliers (JIS standardization not discussed) (c) Documents that have not been deliberated on IEC 61290-10-3 Ed.1 Test methods - Multichannel parameters - Probe methods (JIS standardization is under discussion) IEC/TR 61292-3 Ed.1 Optical ampliers Classication, characteristics and applications
69

Technical Report (TR not discussed) IEC/TR 61292-5 Ed.1 Polarization mode dispersion parameter - General information (TR applied) (2) New documents Standardization deliberations on the following IEC documents are in progress. Test methods - Transient parameters - Two wavelength method (IEC 61290-4-1) Test methods - Transient parameters - Broadband source method (IEC 61290-4-2) Technical report on FWM Technical report on Distributed Raman ampliers Since its establishment in 1990, IEC/TC 86/SC 86C/WG 1, which is working group of International Standardization Organization, has been engaged in standardization of the physical layer of optical communication systems and subsystems, and has been establishing optical system design guidelines and standardizing the test methods of optical systems (general systems, digital systems, optical cable facilities and optical links). In Japan, the Optical Subsystem Subcommittee was established in FY 2002 under the Fiber Optics Standardization Committee to support standardization at SC 86C/WG 1 and prepare JIS drafts. In FY 2006, a new committee, the Optical Subsystem Standardization Committee, was established to continue the activities of the Optical Subsystem Subcommittee for promoting standardization including preparation of JIS drafts. 8.1 JIS Draft Preparation Activities (1) The committee prepared the following draft, and submitted it to JSA last year as a proposal for Article 12, however, the Ministry of Economy, Trade and Industry accepted the same after discussing with the Advisory Subcommittee 1) Optical eye pattern, waveform and extinction ratio measurement (translation of IEC 61280-2-2 Ed2.0) (2) The committee created following two JIS drafts and submitted them to the JSA as proposals for Article 12. 1) Averaged Q-factor determination using amplitude histogram evaluation for optical signal quality monitoring (translation of IEC 61280-2-11 Ed.1.0) 2) Determination of low BER using Q-factor measurements (translation of IEC 61280-2-8 Ed.1.0) (3) The committee is in the process of translating the following 2 IEC standards in preparation for creating JIS drafts 1) Time-resolved chirp and alpha-factor measurement of laser transmitters (translation of IEC 61280-2-10 Ed1.0) 2) Calculating dispersion penalty from measured timeresolved chirp data (translation of IEC 61282-8 Ed1.0)

8.

Optical Subsystem Standardization Committee

8.2 Creation of a Table of Translated Technical Terms Updating the list for terms used in translation of the terminology created so far is continuously advancing for the unication of technological terminology in JIS. As a result, 22 new technical terms that are extracted from the IEC standards translated this scal year are added and the committee established 244 translated technical terms in total. Rise time is translated as josho jikan, and Fall time as kako jikan, to conform to the Optical Active Components Standardization Committee. The revised edition of translated terms list created by the Standardization Committee is submitted to the IEC Terms Sharing WG set up by the Advisory Subcommittee of the Fiber Optics Standardization Committee and the schedule is to actively create the table for terminology of technical terms for disclosing on the web in cooperation with this Subcommittee. 8.3 Activities for International Standardization Members are sent to discuss about the standardization with IEC/TC 86/SC 86C/WG 1 and cooperate for making International Standardization. The committee attended two meetings held in San Diego and Kyoto this scal year, and Japan made the following major contributions. (1) IEC 61280-2-3 Jitter and wander measurements: Mr. Ishibe, a committee member took over the project leader role. He made and corrected the documents, and it proceeded to the FDIS stage. (2) The committee participated in the coordinating group responsible for multimode excitation conditions to discuss the method of determining the incidence condition of a multimode light source. (3) Revisions of IEC 61280-1-3 Central wavelength and spectrum width measurement: From Japan, points which this committee thought should be revised were not reected in the CD document, so these were pointed out again. Central wavelength ( c) is equivalent to momentum center ( avg), so it was decided to use only momentum center ( avg).

examining the content of International Standards from last year. The preparation of JIS draft which is the translation of revised edition of Calibration of optical time-domain reectometers (OTDR) (JIS C 6185-2) started in line with the IEC revision work from last year. Further, the committee continued to work with JIS draft calibration method of optical wavelength meter based on the translation. The committee modied and examined the contents further concerning the individual JIS for Japanese instead of proposing the draft edition of calibration method of tunable light source to IEC. As it is necessary to ascertain the standardization trend of calibration method of optical wavelength meter of IEC in future concerning the revision of Test methods of optical wavelengthmeters (JIS C 6187) examined continuously as the review of current JIS, the examinations were paused for some time and assumed to carry forward in the next year. The committee cooperates to the committee activity of IEC/TC 86/WG 4. The standardization of various tests/ calibration methods of optical power meter and detector are examined in the current year and at the same time, the committee makes efforts for enhancement of optical power meter and detector standardization that contributes very much in the development of optical electronics technology. The line of latest surveillance study item in this committee is shown in table 3. 9.1 Trends of IEC/TC 86/WG 4 IEC/ TC 86/WG 4 is a work group (WG) was set up in TC 86 (ber optics) in 1985 to examine standardization in calibration methods and procedures of optical power meters and detectors. A sub work group (SWG) is established for each optical power meter and detector which becomes subject to standardization, and it proceeds with its work. The trend of working documents of WG 4 are shown in Table 4. 9.2 Study of Standardization of Calibration of optical timedomain reflectometers The following were prepared. IEC 61746-1 Ed. 1.0: Calibration of optical time-domain reectometers (OTDR) - Part 1: Translated JIS draft for OTDR for single-mode bers (CDV draft version), and IEC 61746-2 Ed. 1.0 Calibration of optical time-domain reectometers (OTDR) - Part 2: Translated JIS draft of OTDR for multimode bers (CD3 draft version).

9.

The committee prepared the JIS draft, which keeps consistency between JIS and International Standards, while

Optical Measuring Instrument Standardization Committee

Table 3 The line of latest surveillance study item in this committee

Research Item Optical Measuring Instrument Standardization Trend Calibration of OTDR Calibration Method of Tunable Light Source Calibration Method of Optical Power Meter and Detector Test methods for optical wavelength meter
(stop) (restart)
(proposed in IED)

FY2004

FY2005

FY2006

FY2007

FY2008

70

Standardization

9.3 Study of Translated JIS Draft for Calibration Method of Optical Power Meter and Detector IEC 62129-2 Ed.1.0 was published as an NP document on July 25, 2008. Accordingly, work was restarted on turning the translation into a JIS, and the translated JIS rough draft was prepared. 9.4 Study of International Standardization of Calibration Method of Tunable Light Source The result of discussions on draft by IEC/TC 86/WG 4 in year 2007 was received, the corrected draft was recorrected and proposed again as draft 4. This scal year, investigation for the standardization concerning test/ calibration method of various optical power

meters and detectors were carried out, aiming at the creation of a JIS draft on which continual progress had been made before. For standardization, a new draft of a revised edition of Calibration of optical time-domain reectometers was issued by IEC, and accordingly, translation work was done to make its JIS. Further, IEC proposal and the draft edition for standardization accompanied by this proposal for calibration method of tunable light source are corrected. There is progress in study and examination for continuous discussions about the translated JIS draft of calibration method of optical wavelength meter , and the schedule is to restart the study and examination from next year for the revision of test methods for optical wavelength meter.

Table 4 Activities of IEC/TC86/WG4

SWG SWG-1 IEC number IEC 61315 Ed. 1.0 IEC 61315 Ed. 2.0 SWG-2 IEC 61746 Ed. 1.0 IEC 61746 Ed. 2.0 IEC 61746-1 Ed.1.0 IEC 61746-2 Ed.1.0 SWG-3 IEC 61744 Ed. 1.0 IEC 61744 Ed. 2.0 SWG-4 IEC 61745 Ed. 1.0 SWG-5 Optical Spectrum Analyzer Calibration IEC/PAS 62129 Ed. IEC 62129 Ed. 1.0 SWG-6 SWG-7 SWG-8 2004-03 2006-01 NP (Reject) Calibration of Michelson interferometer single-wavelength meters NP (Approved) Calibration of tunable light source Draft4 SWG-9 Calibration of optical frequency meters Draft3 Return Loss Meter Calibration Draft5:Roundrobbin Igor Vayshenker, NIST Noriyuki Araki / Hidehiko Takara-NTT Yoshihiko Tachikawa Yokogawa Electric Christopher Edwards -NPL Replaced by the normal Hisashi Izumita-NTT East Paul Hale-NIST 2001-02 2005-09 1998-08 Casey Shaar-Photon Kinetics Arthur Barlow Publish date 1995-04 2005-10 2001-09 2005-01 MTC CD2 (2007-12) CD3 (2008-11) Michel. Bouquain -JDSU Marc Breton-EXFO Stage Task leader Calibration of bre optic power meters

Calibration of optical time-domain reectometers (OTDRs) Calibration of optical time-domain reectometers - Including Reectance measurement Calibration of optical time-domain reectometers (OTDR) - Part 1: OTDR for single-mode Calibration of optical time-domain reectometers (OTDR) - Part 2: OTDR for multimode Calibration of bre optic chromatic SWG-3 dispersion test sets

End-face image analysis procedure for the calibration of optical bre geometry test sets

Calibration of the frequency response of time-domain optical waveform measurement equipment (Reference receivers)

71

10.1 Deliberation of JIS Version of IEC 60825-1 The present Laser Safety - Safety of laser products (JIS C 6802:2005) is based on IEC 60825-1 Ed. 1.2 established in 2001. Taking the subsequent development of laser technology and expanding applications into account, IEC reviewed the safety criteria, and published IEC 60825-1 Ed. 2 in March 2007. JIS C 6802 is being reviewed based on this IEC standard since last scal year. Translation of IEC 60825-1 Ed. 2 was done article-by-article and the revision work was almost completed. 10.2 Activities for IEC/TC 76 International standards on the safety of laser products are deliberated at IEC/TC 76 (Optical radiation safety and laser equipment). The meeting of November 2008 was held in Beijing, China with about 90 participants from 11 countries (9 participants from Japan. Both gures include observers). The meeting was held again in Reno, USA in March 2009, for the parts that were not completely discussed at the Beijing meeting. The activities of each WG at the Beijing meeting are summarized below. WG 1 (Laser radiation safety) WG1 standardized 3 types of optical conditions in IEC 60825-1 to measure the angular substance of light source. However, as the theoretical ground of Condition 2 was ambiguous, it was eliminated and integrated into Condition 3. Moreover, the value of AEL was reviewed following the increase in the use of pulse lasers in recent years. Additionally, there were reports of damage caused to the eyes by green-red rays or infrared radiation of 1.2m1.5m wavelength, and issues were raised regarding the necessity of establishing safety standards for scanning lasers that have increased recently. WG 3 (Laser radiation measurement) A special guidance sheet was issued regarding the elimination of Condition 2 of IEC 60825-1. Moreover, deliberations were carried out with regards to IEC 60825-13 (Measurements for classication of laser products) for including scanning parts and examples, for inserting notes for considering the top hat shape in the denition of beam radius, and making changes to exclude TOPT from pulse trains of different amplitudes. WG 4 (Safety of medical laser equipment) Examination of almost all items of IEC 60601-2-57 (intense light sources for therapeutic, diagnostic and cosmetic/aesthetic treatments) was completed. The light sources include all combinations of pulse / CW IPLS and LED, micro waves, etc., and the targets for protection are patients, operators (doctors) and medical assistants. WG 5 (Safety of ber optics communication systems) In regard to the revision of IEC 60825-2 (Safety of optical ber communication system), WG 5 agreed to limit the permissible optical power of HL3B to the old value of 500 mW. In the revision of 60825-12 (Safety of the free space
72

10. TC 76/Laser Safety Standardization Committee

optical transmission system), no deletions were made with regards to LED and the old 60825-1 (Edition 1.2) was used. Around 150 comments were collected in CD circulars of the technical report of 60825-17 (Safety of high power optical ber communication system). These comments were checked in the WG, and it was decided to discuss either 2nd CD or CDV in the next stage. WG 7 (High-power lasers) Though Appendix G of IEC 60825-4 A1 Ed.2 (beam delivery system) was published as Supplement 2 of 608254, the CD was issued without comments discussed during the CD stages being reected. Experiment results were introduced for Appendix D (laser guard testing methods), and it was decided to examine the correction draft for testing methods. WG 8 (Other laser equipment) Deliberations were carried out regarding the withdrawal of IEC TR 60825-10 (Application guide) and the revision of -5 (Manufacturer s checklist) and -14 (Users guide). Moreover, as a new task, deliberations were held for simplifying the labels, revising the scope and objectives and adding conditions for releasing interlocks, etc. during the revision of 60825-1 Ed. 2.0. WG 9 (Non-coherent sources) More than 300 comments were submitted regarding IEC 62471-2 (Classication of risks and labeling of the products), and the revised DTR (Second Edition of the draft) was circulated as soon as the summary was completed. Furthermore, comments were given by CEN (European Standards Coordinating Committee) with regards to 62471 series, and it was decided to completely restructure the series. WG 10 (Safety of lasers and laser equipment in an industrial material processing environment) During the revision of ISO/IEC 11553-3 (Safety requirements for noise reduction and noise measurement methods for laser processing machines), deliberations were held with regards to changing the descriptions in necessary information of risks related to noise, and adding warnings related to potential excessive exposure to laser rays. 11.1 Outline and Committee Meetings The committee carries out various activities including settlement of domestic opinions and deliberation of draft international standards proposed by ISO/TC 172/SC 9 (WG 1: Terminology and test methods for lasers, WG 3: Safety, WG4: Laser systems for medical applications,WG6: Optical components and their test methods, WG7: Electro-optical systems other than lasers, JWG1: Diode lasers), which is in charge of preparing international standards on lasers. Two national committee meetings were held this scal year, and deliberations were conducted for the documents sent from international standardization organizations mainly via e-mail. Moreover, a general assembly was held during

11. Japanese National Committee of ISO/TC 172/SC 9

Standardization

the International Conference in June 2008 in Berlin and three WGs; 1, 4 and 6 held meetings in the current scal year. A proposal for starting the standardization of semiconductor lasers for sensing was put forward by Japan at the Berlin meeting, and it was decided to get comments on the submitted basic plan for discussion in WG1 (Refer to Standardization 17). 11.2 Deliberation of Voting Documents The lists of circulated documents for voting are shown on Table 5.

12. Optical Disk Standardization Committee

The Optical Disk Standardization Committee is a standardization group specializing in the standardization of optical disk and related technologies, and mainly responsible for providing domestic standard drafts and conducting surveys on trends of related technologies. The committee called on key experts in the elds of optical disks and standardization in the relevant domestic organizations, and set up the following subcommittees: three media subcommittees (1st Media Subcommittee: Magnetooptical disk (MO), 2nd Media Subcommittee: Phase-change optical disk (PC), and 3rd Media Subcommittee: (ROM/ recordable disks) according to the physical properties of optical disks, the Format Subcommittee mainly dealing with

logical formats, and the Maintenance Subcommittee. The following two JIS drafts were completed in FY 2008. (1) Data interchange on 130mm magneto-optical disk cartridges Capacity: 9.1 Gbytes per cartridge (1st Media Subcommittee) (2) Test method for the estimation of the archival lifetime of optical media (2nd Media Subcommittee) In addition to the activity report submitted by each subcommittee and the trends in related international standardization, a report entitled Survey of trends in other optical disks and related problems reports about the disk having substrate thickness of 0.6mm, the standards of China, the problems of the domestic TS/TR system, shortening of the period until publishing JIS, etc. 12.1 1st Media Subcommittee (Magneto-Optical Disk) The subcommittee surveyed the trends in the standardization, technology, and industry of magneto-optical disks, and found no signicant new trend within this scal year. In JIS standardization work, the subcommittee also proceeded to prepare a JIS draft corresponding to ISO/IEC 22092 (Data interchange on 130 mm magneto-optical disk cartridges -- Capacity: 9.1 Gbytes per cartridge) established in year 2002.

Table 5 Documents circulated in ISO/TC 172/SC 9 in FY2008

No. 01 02 03 04 05 06 07 08 Voting date 2008/06/02 2008/06/02 2008/06/02 2008/06/11 2008/06/11 2008/06/11 2008/06/22 2008/08/06 Document Optics and optical instruments -- Lasers and laser-related equipment -- Test method for absorptance of optical laser components (ISO/SR 11551) Laser and laser-related equipment - Test methods for determination of the shape of a laser beam wavefront - Part 1: Terminology and fundamental aspects (ISO/SR 15367-1) Optics and optical instruments -- Lasers and laser-related equipment -- Lifetime of lasers (ISO/SR 17526) Safety of machinery -- Laser processing machines -- Part 1: General safety requirements (ISO/SR 11553-1) Laser and laser-related equipment - Test method and classication for the laser resistance of surgical drapes and/or patient protective covers - Part 1: Primary ignition and penetration (ISO/SR 11810-1) Lasers and laser-related equipment -- Test methods for determination of the shape of a laser beam wavefront -- Part 2: ShackHartmann sensors (ISO/SR 15367-2) ILasers and laser-related equipment -- Test methods for laser beam parameters -- Beam positional stability (ISO/SR 11670) ISO/DIS 11553-3: Safety of machinery - Laser processing machines - Part 3: Safety requirements for noise reduction and noise measurement methods for laser processing machines and hand held laser processing devices and associated auxiliary equipment (Accuracy grades 2) NP/ ISO 11252: Laser and laser-related equipment - Laser device - Minimum requirements for documentation (ISO/TC 172/ SC 9 N 343) Revision of ISO 11810-1:2005 (ISO/TC 172/SC 9 N 350) Revision of ISO 15367-1:2003 (ISO/TC 172/SC 9 N 351) Revision of ISO 11551: 2003 (ISO/TC 172/SC 9 N 348) Revision of ISO 11670:2003 (ISO/TC 172/SC 9 N 349) Revision of ISO 13567-2:2005 (ISO/TC 172/SC 9 N 352) NP: Summery on standardization of cavity ring-down technique for high reectance measurement (ISO/TC 172/SC 9 N 358) ISO/DIS 11990-2: Laser and laser-related equipment - Determination of laser resistance of tracheal tubes - Part 2: Tracheal tube cuffs

09 10 11 12 13 14 15 16

2008/09/10 2008/12/07 2008/12/07 2008/12/08 2008/12/08 2008/12/08 2009/02/27 2009/03/02

73

12.2 2nd Media Subcommittee (Phase-Change Optical Disk) The subcommittee completed preparation of JIS draft of Test method for the estimation of the archival lifetime of optical media and tasks for the Standards Coordinating Subcommittee this scal year. The subcommittee also conducted the following surveys: (1) Update of correspondence among JIS and Ecma standards and international standards relating to phase-change optical disk (2) Trends in international standardization The subcommittee summarized key points of Ecma meetings: Ecma /TC31 meeting, Ecma GA (general assembly) meeting, and ISO/IEC JTC 1/SC23 meeting. (3) Trends in standards-related technologies The subcommittee surveyed the latest trends in Blu-ray Disc. (4) Future technology trends The subcommittee surveyed the trends in high-density writing/reading technology, media/material technology, phase-change memory (electric memory) and other noteworthy technologies, mainly in the domestic and international reports on these topics. (5) Other optical disk trends 0.6mm thickness substrate disks and standard trends of China, such as CBHD, and NVD, are surveyed. 12.3 3rd Media Subcommittee (ROM) The subcommittee conducted surveys on the following four topics of ROM and recordable optical disks: (1) Trends in standardization Follow up of creation and discussion on JIS draft of ROM and the recordable (write-once) optical disk, and held discussions and did JIS revision work to maintain JIS standards which have been enacted up to now. (2) Standards-related technology trends A high-speed recording and two layer recording, etc. in ROM type disk and recordable optical disk were surveyed in this scal year. (3) Standardization trends in reliability assessment The subcommittee surveyed the activities of various committees and industry organizations which focused on the reliability assessment criteria and measurement methods of optical disks. (4) Next-generation JIS standards The subcommittee surveyed DVD download standards, and BD-RE/ROM/R standards. 12.4 Format Subcommittee The subcommittee conducted the following activities as part of the surveys on the volume and le format of optical disks, including those continued from FY 2007: (1) Guideline for resistance to mechanical stress on CD/ DVD media during transportation and storage Editorial modications were introduced in the TR draft
74

submitted in FY 2007. (2) Handling of comments on JIS draft Regarding each JIS draft concerning CD-R, CD-RW, DVD-R, DVD-RW, and DVD-RAM, comments for FY 2008 were handled from the JSA Standards Coordinating Subcommittee, along with comments from the JISC Information Technology Experts Committee. These contributed to enhance the degree of completion of the draft standards. 12.5 Maintenance Subcommittee (1) Standards maintenance The maintenance table of the standards related to the logical format for which the Format Subcommittee is in charge was renewed in this scal year. (2) Status of JIS draft preparation The subcommittee updated the progress report according to the latest progress, from the preparation of JIS drafts to publication of JIS, which are presented in the OITDA website.

13. New Type Solar Cell Standardization Committee

13.1 Standardization of the Method Evaluating (Rating) the Rated Output of Photovoltaic Cells The New Type Solar Cell Standardization Committee set up a round robin small WG, and carried out measurements by carrying over multiple solar cell modules to various places within the country. In the round robin experiments carried out over about a one year period from August 2007, outdoor measurement data was obtained for 330 days in 10 places in Japan. From this test, data was obtained that clearly showed the difference between crystal silicon type and amorphous silicon type models, and from that it was possible to obtain a basic domestic database for the standardization of energy production ratings. The method of estimating energy production was examined using a multiple regression model to verify the data obtained by the round robin test. It was found that the estimated accuracy reached the target level, around 5%, but there are issues in changing the estimation parameters for different climates. The aging performance change of amorphous silicon modules still exert a great inuence on the energy production estimation accuracy, and in the future it is important to also incorporate performance changes for new type solar modules. 13.2 Standardization of the Method of Evaluating New Types of Photovoltaic Cells The ultimate goal of standardizing the method of evaluating new types of photovoltaic cells is to develop a standard system that includes evaluation methods for multijunction solar cells and modules, CIS solar cells, and dye sensitized/organic solar devices. In the current year, partial standardization of the method of evaluating the output of CIS solar cells and modules was carried out, various

Standardization

specications concerning performance were arranged, and the Technical Specications (TS) drafts were completed. The OITDA standards draft was completed so that it can contribute to the standardization of output evaluation method for dye sensitized solar devices which are attracting attention as the next generation solar devices. This will act as the bridgehead to connect with the discussion of Technical Report draft or JIS draft while observing research progress. The discussion of this scal year and the created standards draft etc. (including Technical Specications) are described in Table 6. Preliminary examination of JIS C 8991 revision was carried out by investigating the revised contents of IEC 61646, Edition 2 which is an international certication standard. The revised draft of JIS C 8990 that is an international certication JIS was submitted. Investigation related to the process of adjustment to IEC standards was executed to promote the integration of the new type solar cell evaluation methods with the existing JIS of solar cells and modules. The integration process was determined by comparing the scope of application and specication parameters and contents of IEC standards and JIS. From now on, it is necessary to make the draft amendments of the specication parameters and specication contents in line with the integration process. 13.3 Preliminary Survey for the Standardization of Long-term Reliability Evaluation Technology Evaluation items/evaluation methods were selected for each component comprising a solar cells and modules, and the merits and demerits of the evaluation items/evaluation methods were discussed. In the future, a survey on the evaluation method for each evaluation item and existing evaluation standards is thought necessary. 13.4 Survey on Actual Situation of Solar Cell Research, Development and Production A solar cell production volume survey was done, and a survey on the R&D situations of Monocrystalline Si solar
Table 6 The created standards draft etc. (including Technical Specifications)
No.(Temporary) TS C JN01 TS C JN03 TS C JN04 TS C JN06 TS C JN07 OITDA-PV01 JIS C 60904-3 Name of Document Secondary reference CIS cells Secondary reference CIS cells Secondary reference CIS cells Secondary reference CIS cells Secondary reference CIS cells Evaluation method of performance for dye-sensitized solar devices Measurement principles for photovoltaic (PV) solar with reference spectral irradiance data

cells and modules/Polycrystalline Si solar cells and modules/ Thin lm crystal Si solar cells and modules/Compound solar cells and modules /Amorphous solar modules/Organic solar devices. This scal year, the committee held its 57th WG2 International Conference together with the TC 82nd General assembly in San Francisco in May, and its 58th WG2 International Conference was held in Pusan, South Korea in October. It also exchanged information and opinions with the domestic committee and concerned parties. Through these activities, it discussed ongoing IEC new standards drafts, maintenance documents, and proposed contents. As new standards, this year IEC 60904-4 (Procedures for establishing calibration traceability) was passed on to each country as CDV. Moreover, about the IEC 61853NP (Photovoltaic (PV) module performance testing and energy rating ), Part 1 (Power rating) was approved at last as NP, and an NP was communicated for Part 2. Regarding standards revision, for safety standard IEC 61730, the proposal for the ame test method of the terminal box lling material was given by Japan, and it was approved. For IEC 61730, the draft revision has been investigated until now, but considering the many mistakes in the current standard, it was decided to proceed with future efforts by dividing the process into 2 steps (Step 1: Correction of errors (Corrigendum), Step 2: Making and execution of Ed.2 with additional technical improvements). For Crystalline Si module authentication IEC 61215, draft of Ed.3 was discussed and nal draft D was scheduled as CDV in the next conference. Moreover, a new project was started with work on the standardization of Materials (material evaluation), and it was decided to proceed with investigation by forming a task team. The plan is for Japan to place members in this committee.

14. IEC/TC 82/WG 2 Japanese National Committee

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Table 7 Major Standards (draft) Under Deliberation at IEC/TC 82/WG 2

IEC Document No. 60904-4 NEW standard draft 61853-1 Title State

Photovoltaic devices - Part 4: Reference solar devices - Procedures Ed.1 under consideration, (533/CDV) was circulated. All the members agreement (with no comment) in for establishing calibration traceability the domestic committee on September 4. No examination this time. Photovoltaic (PV) module performance testing and energy rating - Part Ed.1 under consideration, (522/NP) was circulated. NP was passed by a majority. Comments from 7 countries 1: Irradiance and temperature performance measurements and power were discussed. Ed.1 would be submitted to CO as CDV. rating Photovoltaic (PV) module performance testing and energy rating - Part Ed.1 under consideration, (546/NP) was circulated. No examination this time. After deliberation in the next 2: Spectral response, incidence angle and module operating temperature meeting, aiming for submitting Ed1 as CDV. measurements Photovoltaic (PV) module performance testing and energy rating - Part There was explanation of Draft that would be sent to all the members for comments. After reafrmation in 3: Energy Rating of PV Modules the next meeting, submitting it as NP. Photovoltaic (PV) module performance testing and energy rating - Part No examination this time. 4: -(Standard time periods and weather conditions) Crystalline silicon terrestrial photovoltaic (PV) modules - Design Ed.3 under consideration, (534/MCR) was circulated. CDV target, August, 2009. FDIS target, June, 2010. qualication and type approval PL: John Wohlgemuth (BP Solar). This examination: Deliberation based on a revision draft. After reafrmation in the next meeting, submitting it as CDV. Photovoltaic (PV) module safety qualication - Part 1: Requirements Ed.2 under consideration, (536/MCR) was circulated. CDV target, May, 2009. FDIS target, March, 2010. for construction PL: Tim Zgonena (UL). The rst step (correcting corrigenda of the current version), the second step (making of Ed.2 which increased technical improvement and publication). Photovoltaic (PV) module safety qualication - Part 2: Requirements Ed.2 under consideration, (537/MCR) was circulated. CDV target, May, 2009. FDIS target, March, 2010. for testing PL: Werner Herrmann (TUV/Germany). The rst step (correcting corrigenda of the current version), the second step (making of Ed.2 which increased technical improvement and publication). Thin-lm terrestrial photovoltaic (PV) modules - Design qualication IS of Ed.2 issued. No examination this time. and type approval Procedures for temperature and irradiance corrections to measured Ed.2 under consideration, (543/MCR) was circulated. I-V characteristics of photovoltaic devices No examination this time. Photovoltaic devices - Part 1: Measurement of photovoltaic current- IS of Ed.2 issued. No examination this time. voltage characteristics Photovoltaic devices - Part 2: Requirements for reference solar IS of Ed.2 issued. No examination this time. devices Photovoltaic devices - Part 3: Measurement principles for terrestrial IS of Ed.2 issued. No examination this time. photovoltaic (PV) solar devices with reference spectral irradiance data Photovoltaic devices - Part 5: Determination of the equivalent cell Ed.2 examination started. (545/MCR) was circulated. PL: Klaus Beucher (OptoSolar/Germany). There was temperature (ECT) of photovoltaic (PV) devices by the open-circuit explanation of Draft this time. Sending Draft F to the committee for comments, the answer by the end of February. Making CDV before next meeting. voltage method Photovoltaic devices - Part 7: Computation of the spectral mismatch (540/FDIS) was circulated. All the members agreement (with no comment) in the domestic committee on correction for measurements of photovoltaic devices September 4. S of Ed.3 issued. Photovoltaic devices - Part 8: Measurement of spectral response of a Ed.3 examination started. (543/MCR) was circulated. PL: Klaus Beucher (Optosolar/Germany). This photovoltaic (PV) device examination Explanation of Draft H that would be sent to all the members for comments. After reconsideration in the next meeting, submitting it as CDV. Photovoltaic devices - Part 9: Solar simulator performance IS of Ed.2 issued. No examination this time. requirements Photovoltaic devices - Part 10: Methods of linearity measurement Salt mist corrosion testing of photovoltaic (PV) modules Material evaluation Ed.2 under consideration, (539/CDV) was circulated. All the members agreement (with no comment) in the domestic committee on September 4. No examination this time. Ed.2 under consideration. PL: Fabero(CIEMAT) This examination: Deliberation of Draft C, submitting as a CD with these contents. Tim Zgonena introduced the contents of the action plan (an American action, conformed to the UL standard). Making Task team for examination. Japan nominates members, too.

61853-2 61853-3 61853-4 61215

61730-1

61730-2 61646 60891 Maintenance standard draft 60904-1 60904-2 60904-3

60904-5

60904-7

60904-8 60904-9 60904-10 61701 Materials

Polymer optical waveguide has superior economic aspects as an optical circuit board, and development of new technologies is steadily progressing using it as a cabling part for building next-generation FTTH, and part for interconnection between and in boards of cellular phones and optical information processing equipment. For these kinds of applications, the issue is the standardization of a low cost performance evaluation method suitable for polymer optical waveguide, not the kind of performance evaluation method that would be required for highly reliable

15. National Research & Development for International Standardization [Standardization of polymer optical waveguide performance evaluation] (P-project)

communication components. Both manufacturers and users require the development of simplied performance evaluation methods, collection of evaluation data, and their standardization in order to expand markets with stable products. Standardization of polymer optical waveguide performance evaluation was commissioned to OITDA under the three year plan starting FY 2007 for the Standards Authentication Research and Development Project Commissioning Expenditure by the Ministry of Economy, Trade and Industry, to contribute to the planning of international standards in response to the above-mentioned demands. The contents of target international standards and the progress of concerned specications are mentioned below.

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Standardization

[Content of target International Standards] Evaluation criteria and the method for optical performance of optical circuit boards made by a polymer optical waveguide. Reliability standards with the clarication of degradation mechanism for polymer optical waveguide, considered from environmental conditions, abrasion failure, etc. Evaluation means and failure criterion that considers the consistency between reliability evaluation condition and method of polymer optical waveguide [International standardization progress (As per proposed regulations)] General rules of optical circuit boards : Being circulated to FDIS Optics characteristics measurement method for optical circuit boards : 2CD document is submitted (2008.10: Conference in Kyoto) Dimension measurement method for optical circuit boards : Presentation as NP sponsored run-up (2008.04: Conference in Prague) Reliability standards for optical circuit boards : Plan is reviewed while considering trends in the world Review for revising optical waveguide standards (ISO) : Examination while considering IEC establishment and revision conditions Mode excitation condition of incident beam for optical characteristic evaluation of multimode optical waveguide : Presentation for NP proposal (2008.10: Conference in Kyoto) In FY 2008, the second year since the project start, in proceeding with international standardization proposal mentioned above, ve themes were set and research and development has been implemented. The outline of each theme and the results were set down as follows. (1) Proposal for standard chip to evaluate polymer optical waveguide The waveguide pattern of a standard chip that can rapidly evaluate polymer optical waveguides and optical circuits was specied. The manufacturing of standard chips with different apertures and waveguide characteristics were evaluated, and the effectiveness of a standard chip was conrmed. Hereafter, a standard chip will be developed with other users, and the plan is to conrm whether it is a simple and easy way of evaluating optical waveguides. (2) Establishment of polymer waveguide evaluation method There was progress in accumulating data by evaluating polymer optical waveguides wherein material, waveguide parameters and manufacturing methods are different. As a result, when a small NA light was used for the incident beam, it was clearly observed that the loss measurement value was
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small. This tendency became more obvious as the core diameter of optical waveguide was increased. On the other hand, according to IEC International conference participation and overseas investigation, it was observed that the incident beam of multimode optical waveguide should be a light that satises encircled ux. Actually, the application towards polymer optical waveguide measurement was investigated, seeking a mode scrambler which could achieve encircled ux, from the view point of practicability (versatility and small size). An experiment system by which steady mode and full mode can be excited was constructed and reproducibility was conrmed. At the same time, investigation of incident beam by spatial optical system was done, and it was conrmed that the creation of arbitrary beam prole was not easy. (3) Investigation of reliability standards by clarifying the long-term degradation mechanism of polymer optical waveguide A measurement evaluation system is constructed to understand the peculiar degradation mechanism on optical circuit boards of polymer optical waveguide, and the basic data as the measurement evaluation method of optical waveguide is being accumulated. The factor that affects reliability like optical propagation performance was understood based on the accumulated results, and the method of evaluating long-term reliability was investigated in detail. (4) Strength test, humidity test, high temperature-high humidity test, thermal shock test of polymer optical waveguide The test conditions for measuring durability were investigated in detail based on the basic data of long-term reliability, and a measurement evaluation system for the same was constructed. Basic data for actual long-term reliability of optical waveguide was accumulated, and usability of the measurement evaluation system was understood. (5) International standardization of performance measurement method and test method of polymer optical waveguide Specialists from this project were sent to an IEC International Conference, and held discussions which reected the latest data. A proposal concerning excitation mode was given in the conference held in Kyoto in autumn 2008. Discussions were held about the effect on loss measurement value due to optical waveguide form and incident beam diameter / NA. Industrial and technological trends are being studied at international conferences of Photonics West, at domestic societies like the Japan Society of Applied Physics and Institute of Electronics, Information and Communication Engineers, etc. The results were presented in Photonics West. OITDA members visited the enterprises and the universities in Europe at the end of September, and in the United States in December, and cooperation was requested in IEC

international standardization discussions. OITDA aims at achieving the goals for each research and development theme, and plans to create draft reports on dimension measurement method, test method, and ISO revision in FY 2009, which is nal year for research and development.

Trafc volume on communication networks are growing rapidly with digitalization progress. Against this background, one can see a movement for SFP (Small Form Pluggable) optical transmitter modules (below, optical module) used in conventional high speed optical LANs to be used as powerful cards for technology boosting capacity of the backbone network. Huge numbers of lines are handled in the backbone network, resulting in frequently generated connection/switch operation of optical cords, along with which optical modules are mounted in high density. However, such usage methods are not assumed for current IEC standards (Tensile strength of optical connector, etc., specied by IEC/TC 86/SC 86B), and the standard and evaluation methods are not established for the mechanical reliability that affects the transmission quality in case of external force used for connected optical cord or when adjacent ports are operated. The standardization of methods to evaluate mechanical reliability in parts that connect optical modules and optical cords has become an urgent task to establish reliability of the backbone network. To respond to such issues concerning reliability of backbone networks, and to contribute to making drafts of international standards, Standardization of mechanical reliability evaluation method of SFP optical transmitter module was commissioned in FY 2008 to OITDA under the Standards Authentication Research and Development Project Commissioning Expenditure by the Ministry of Economy, Trade and Industry. The Committee of International Standardization Proposal for Mechanical Reliability Evaluation Method for SFP Optical Transmitter Module was constituted and proceeded with research and development under a three year plan for standardization of mechanical reliability evaluation method of SFP optical transmission module for optical modules, and standardization in oblique tensile strength measurement method of optical connector for connection parts of optical cords. (1) Survey of mechanical reliability evaluation method of optical modules The direction and size of load applied to the optical cord at the time of normal operation in these standards and examination, and the transmission loss change generated at this time were measured, and basic experiments were carried out that are necessary to establish for the standardization of
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16. National Research & Development for International Standardization [Standardization of Mechanical Reliability Evaluation Method for SFP Optical Transmitter Module] (W project)

a mechanical reliability evaluation method of optical modules. Moreover, the proposal of the evaluation method (Wiggle test) was previously put out by the United States, and the experiments were carried out while discussing the points that differ from this proposal. An evaluation method that uses a specialty product for the test cord was proposed by the United States. Though establishment was proceeding with an evaluation method that uses normal optical cord which conforms to IEC performance standards, the result of repeatedly verifying differences (no correlation as the two evaluation methods evaluate different performance) between the evaluation methods and evaluation results shows that there is no unication in an evaluation method that corresponds to all optical modules, and so the discussions concluded by showing the importance of using both evaluation methods together. Therefore, the role of each measurement was claried for both measurement methods [1. Method A: for DATACOM (proposed by US) and Method B: for Career (proposed by Japan)] and was established as the evaluation method to be used properly by the user. In the future, the Japan side must clarify details of test conditions that includes test load necessary for Method B, and the United States side is requested to plan the specications of the special test cord used in Method A. (2) Experiment for mechanical reliability evaluation method of optical modules Load was applied to the optical cord connected to SFP optical module, and the size of test load appropriate for the mechanical reliability evaluation method (Method B) was checked based on the data obtained by measuring the change in transmission loss. The experiment was performed, wherein the optical module was rotated in the state wherein load was applied to the optical cord combined with optical module. The initial plan was a load in a 45- degree direction, but it was changed to 90-degrees due to the problems of how to apply this load and the optical module structure. To gather data for standardization which is useful for international standards, optical modules and optical cords including overseas manufacturer products were used for the data collection, in the standardization that accepts the International Standards, repeated experiments were carried out while considering the combinations of the products, and the test load was determined to be 4.5N. (3) Experiment for evaluation method of oblique tensile strength of cord with optical connector (optical cord) The intention is to standardize the test method for oblique tensile strength of optical cord necessary to decide the specications of optical cord used in the evaluation method proposed by Japan (Method B). An experiment was performed in which nutation test of optical cable rotated while applying the load in a 45-degree diagonal direction against various commercially available optical cords. These experiments will make a full edged start in the coming

Standardization

scal year. (4) International standardization of mechanical reliability evaluation method of optical modules, and evaluation method of oblique tensile strength of cord with optical connector (optical cord) The points of the basic experiment results until now and the difference between two evaluation methods were reported in the IEC/SC 86C meeting organized in Kyoto in October of the current scal year. Before reporting, we visited the CISCO company (San Jose) which is part of the U.S. proposal side. During the visit, views were coordinated discussions held with the other side, enabling smooth progress at the Kyoto meeting for experiment methods and verication contents by Japan side. After the Kyoto meeting, the system for the standardization of methods A and B described in (1) by the Japan side was summarized, and was approved at the San Diego meeting in March of the current scal year. The proposed standard system is a composition of IEC 62150-3 Guidance (describes the denition of Method A/ Method B), IEC 62150-3-1 (prescribes Method A: For career ), and IEC 62150-3-2 (prescribes Method B: For datacom ). The approval (task leader Japan) to circulate NWIP Draft of IEC 62150-3-2 method B as NP was given at the San Diego meeting. In addition, it is planned that Japan will become task leader in the future for IEC 62150-3 Guidance, and will make the NP draft.

In this project, OITDA aims to enact an international standards for Laser diods (LD) used for sensing, according to the 3 year plan in cooperation with Toyohashi University of Technology, under consignment from the Ministry of Economy, Trade and Industry, starting the current scal year. In the future, LD is applicable for environmental measurements like CO2 concentration measurements, medical measurements, in the eld of IT agriculture such as sugar test of fruits, etc. Their expanded use in various sensing elds is expected. LD used widely in these industries have been standardized by specications in IEC/TC 86/SC 86C for optical communication uses, and by ISO/TC 172/SC 9 and IEC/TC 47/SC 47E for CD and DVD consumer products. However, when looking at sensing uses, the absorption spectrum of gas to be detected is often obtained through sweeping LD oscillation wave length by changing the temperature or

17. National Research & Development for International Standardization [Standardization of generics and measuring method of laser diodes for sensing applications] (D project)

injection current amount. Therefore, it is vitally important to measure the temperature coefcient and injection current coefcient of LD oscillation wave length. Moreover, oscillation spectral line width becomes an important characteristic, because it affects spectrum measurement sensitivity. However, these characteristics are unnecessary in the elds and applications of conventional communications and consumer products such as DVD, and were not investigated as characteristic items for standardization. But there are very high expectations for LD in sensing applications, and in order to dig up potential demand and encourage their wide use, standardization of test and evaluation method concerning these unstudied items has become an urgent task. OITDA aims to propose and create international standards with persuasive power based on the results of validation tests for sensing LD carried out in this survey research. Specically, survey activity and experiments are done in order to propose the following two standards to ISO/TC 172/SC 9. (1) Optics and photonics - Measuring method of laser diode for sensing - Part 1: Vocabulary and symbols (2) Optics and photonics - Measuring method of laser diode for sensing - Part 2: Measuring methods For the general rules of (1), characteristics items used for sensing LD are to be specied while considering consistency with standards for conventional communications and consumer products. For the measurement method of (2), the measurement method related to spectrum which is especially important for sensing LD is to be newly specied, and other items shall be consistent with existing standards for communication and consumer products. The Sensing Lasers Test Standards Proposal Committee was established this scal year, a rough draft was prepared to propose the general rules as NP in ISO/TC 172/SC 9, and the draft completed for an NP to propose this to DIN (Germany) which is the organizer country of ISO/TC 172/ SC 9 to build-up the coordination with the domestic task force. The experiment system was set up in the Toyohashi University of Technology for the measurement methods, and with that the measurement system for temperature and current coefcient of LD transmission wave length and the measurement system for oscillation spectral line width were constructed and the basic experiments were performed. Next scal year, the plan is to start drafting standards for measurement methods and propose starting standardization at the meeting at the Berlin where the meeting will be held in November, 2009.

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Educational and Public Relations Activities

The OITDA has been carrying out a number of programs in order to provide education for people engaged in the optoelectronic industry, spread information and raise awareness of optoelectronics, and promote international exchange, thereby contributing to the development of this industry. In FY 2008 as well, in the eld of human resources development, we held the Laser Safety School and the Examination for Laser Equipment Engineers for the purpose of providing training and assessment of the necessary skills for handling lasers in the course of R&D, manufacturing and sales. The activities to spread information and raise awareness of optoelectronics include various symposia and regular seminars on optoelectronics, and the awarding of the Kenjiro Sakurai Memorial Prize. We also conduct activities to spread information and raise awareness of optoelectronics continuously via our website, OptoNews, etc. Of these activities, the Symposium on the Optoelectronic Industry and Technology, Symposium on Optoelectronic Technology, Symposium on Optoelectronic Industry Technology Standardization, Monthly Seminars and some activities to spread information and raise awareness are part of the activities subsidized by the JKA through its Promotion funds from KEIRIN RACE. To promote international exchange, in addition to activities for daily research and standardization, we sponsor an exhibition of optoelectronics, called InterOpto 08. To prevent accidents and injuries when handling laser equipment, the OITDA holds the Laser Safety School for people who design, develop, manufacture, process, sell, operate and maintain laser equipment. This school provides practical lectures on specic subjects, such as optoelectronic technology, effects of laser light on the human body, and laser safety, given by currently active experts in these areas as guest lecturers. Lecture programs on laser safety are organized systematically in the following stages: introduction to optoelectronics and laser (Course I), basic knowledge (Course S) [fundamental knowledge for laser engineering (Course S1), fundamental knowledge for laser safety (Course S2), safety procedure for applied laser equipment (Course S3), and safety procedure for high-output laser equipment (Course S4)], and specialized knowledge (Course M) [laser safety manager course (Course M1) and laser safety engineer course (Course M2)]. The school also provides practice in problem solving for participants who have completed each course in order to conrm their level of understanding. The 23rd Laser Safety School operated from October 20 to 24 (Term 1) and from November 10 to 14, 2008 (Term 2) at Koku Kaikan in Shinbashi, Tokyo. The number of participants in each term is listed in the table below. Possibly due to effects of the global nancial crisis
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1.

Introduction

originating in the U.S., there were 878 participants (986 last time), a decrease by about 11%. However, there were 156 participating companies and organizations (down about 3% from 161 last time), a slight increase. This can be taken to show the strong awareness of safety education for laser products. If laser products are introduced into a wider range of sectors, then the number of people handling laser products may increase over the long term. The 24th Laser Safety School will be held from October 19 (Monday) to 23 (Friday) (Term 1) and November 9 (Monday) to 13 (Friday) (Term 2), 2009 at the same venue
Number of Participants in the 23rd Laser Safety School (Unit: Person)
Course I S1 S2 S3 S4 M1 M2 Total 47 74 123 71 74 103 492 82 120 68 69 47 386 Total 47 156 243 139 143 103 47 878

as the previous year. The purpose of this examination is to test laser equipment handlers, safety controllers and safety engineers for the knowledge levels necessary to prevent danger or damage through handling laser equipment, and register in OITDA the people who pass, thereby promoting safety in handling of laser equipment, and supporting sound development of lasers and the optoelectronic industry. The 19th Examination for Laser Equipment Engineers was held on December 5, 2008, at Kikai Shinko Kaikan in Shibakoen, Tokyo. On that day, 140 applicants from all over Japan were assigned to three rooms to take a two-hour examination from 10 a.m. to noon and from 1 to 3 p.m. respectively. Looking at a breakdown of applicants, There were ve applicants for the Laser Safety Controller Expert test (Elective 1 in Class 1) on whether the person has comprehensive knowledge of lasers and knowledge of laser risks and safety rules, there were 11 applicants for the Safety Engineer Expert test (Elective 2, Class 1), and 124 applicants for Class 2, which tests the person on basic safety standards and knowledge of lasers. As a result of rigorous grading by the Examination Committee, three applicants passed Elective 1 in Class 1, six applicants passed Elective 2 in Class 1, and 61 applicants passed Class 2. Including people who passed this time, a total 1,763 people have valid registration: 73 Elective 1 in Class1, 199 Elective 2 in Class 1, and 1,491 in Class 2. The 20th Examination for Laser Equipment Engineers will be held on December 4 (Friday), 2009, at the same venue as the previous year.

3.

Examination for Laser Equipment Engineers

2.

Laser Safety School

Educational and Public Relations Activities

Results of the 19th Examination for Laser Equipment engineers

Number of Applicants Elective 1 in Class 1 Elective 2 in Class 1 Class 2 Total 5 11 124 140 Number of Successful Applicants 3 6 61 70 Pass Rate 60.0 % 54.5 % 49.2 % 50.0 %

4.1 28th Symposium on the Optoelectronics Industry and Technology The 28th Symposium on the Optoelectronic Industry and Technology, organized by OITDA and sponsored by the Ministry of Economy, Trade and Industry, was held on December 3 (Wednesday), 2008 at Toranomon Pastoral in Tokyo under the theme of Green Optoelectronic IT Innovation - Aiming for Coexistence of Global Environmental Protection with Economic Growth. The symposium was opened by Mr. Yasuhisa Odani, Chief Executive Director of the OITDA, followed by the guest speaker, Mr. Atsuo Hirai, Programs Coordination Manager at the Information Economy Division of the Commerce and Information Policy Bureau of METI. He provided these words of encouragement: Since this October, Japan s electronics industry overall has experienced a sales decline since the IT bubble s collapse, but 50 billion yen is being requested for its promotion as a budget forecast for next scal year. Japan s optoelectronic industry and technology has shown strong international competitive strength until now, and it must continually advance through development of innovative optical devices and optical systems. On the other hand, global warming problems are daily becoming more severe and the Ministry of Economy, Trade and Industry is requesting a 6.8 billion yen budget to directly solve energy and environmental problems, with Green IT Initiative as a pillar. The optoelectronic industry is no exception, and there are expectations for progress for energy saving technologies in both optoelectronic IT itself and optoelectronic IT equipment utilization, and we want to support that. Next, Yoshio Tsukio (Professor Emeritus, University of Tokyo) gave a special talk entitled Economic Strategy to Achieve a Sustainable Society, explaining More than global warming problems, there is a severe problem of depletion of global resources. Sustainable development is a way to continue developing living standards and economic activities, and also reduce resource consumption. To this end, it is important to strive for technology which raises equipment efciency, and promote resource recycling. We should review the compact culture which adopts the energy saving aspects
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4.

Symposium

of Japanese culture from the Edo period, and must communicate it to the world. We live in a period when the environment is vital, and we cannot be arrogant and forget the sanctity of the globe. He also provided a wealth of data on specic examples to make it easily understood. Next, Kazuo Kyuma, Senior Executive Ofcer of Mitsubishi Electric Corporation, gave the keynote speech entitled Information Explosion and Energy saving. He fervently described the global warming countermeasure initiative Environmental Vision 2021 announced in October 2007. This is Mitsubishi Electric s long term vision for global warming countermeasures aiming at coexistence of rich lives with global environmental maintenance. The afternoon had four talks including from speakers invited from Taiwan and Singapore. Now & Future of Optical Industry & Technology in Taiwan was given by Professor Yung-Sheng Liu (Tsing Hua University), followed with IME and Silicon Photonics Impact by Professor Patrick Guo-Qiang Lo (Singapore Director, Institute of Microelectronics (IME)). These gave a true sense of the reality of progress of optoelectronic industry technologies in rapidly rising East Asia. Also, Junjiro Shintaku (The University of Tokyo, Graduate School of Economics, Manufacturing Management Research Center) gave a talk entitled Technology Diffusion and International Division of labour as Viewed from Product Architecture. He used integral and modular models to analyze Japan s optoelectronic technologies and industry which face the rise of East Asia, and showed a path forward. Finally, Kenichi Sato (Professor, Graduate School of Engineering, Nagoya University) gave a talk entitled Optoelectronic Technologies Enabling Advanced Energy Saving, explaining that waveband technology and Hierarchical Optical Cross-Connect (HOXC) have become important from the viewpoint of energy saving. There were about 170 participants, showing the strong interest in this theme. 4.2 Symposium on Optoelectronics Technology OITDA and the Photonics Research Institute of National Institute of Advanced Industrial Science and Technology (AIST) jointly organized the 12th Symposium on Optoelectronic Technology on February 24, 2009 at the Annex to AIST Tokyo Waterfront, entitled Precision Processing Research and Industry/Academia Cooperation Using Advanced Laser Technologies. The symposium was planned with invitations to speakers active as leaders in this eld. It focused on the latest trends in laser technologies which are advancing technology development in the precision processing eld, looking at laser light sources through to processing technologies. Over 160 participants came that day from industry and related research institutes, showing the strong interest in this eld. Three talks given by Guest Speakers were Laser Nanoprocessing and Industry/Academia Cooperation (Professor Obara, Keio Graduate School), Laser Processing

Technologies Applying Optical Wave Control (Mr. Amako, Seiko Epson Corporation), and Latest Laser Processing in Job Shops (President Ueno, Tosei Electrobeam Company Limited). General Speakers gave another six talks on laser processing technologies, including Higher Average Output in Femtosecond Pulse Lasers (Kenji Torizuka, AIST Photonics Research Institute). There was strong interest in the varied talks, ranging from the situation of advanced technology developments such as application of femtosecond lasers to nanoprocessing and application of diffractive optical elements to laser processing, through to the latest processing technologies and examples in job shops, including industry/academia cooperation, with many reports on results in research on laser precision processing. Also, President Ueno of Tosei Electrobeam explained that laser processing equipment is being actively introduced not only in large manufacturers but also in small and medium manufacturers. He explained that technology is advancing daily not only in research institutions but also at actual processing sites. These talks went beyond simple laser technology trends and technology information, helping to understand technology developments, business and directions of such laser processing. 4.3 Symposium on Optoelectronic Industry Technology Standardization The FY 2008 Symposium on Standardization was held February 25 (Wednesday) at the large hall of The Bankers Club in Otemachi, Tokyo. It invited two speakers: Mr. Etsuji Sugita (Director and Optical Information & Communication Market Development Ofce Manager, Hakusan Mfg. Co., Ltd.), and Mr. Keiichi Kubota (Director General, Science & Technical Research Laboratories, NHK). Mr. Sugita gave a talk entitled IEC/TC 86 Standardization and Japan s Role. He gave a detailed talk, starting with an outline from its positioning in IEC activities overall, explaining the current situation, contributions to business and outlook for future international standardization, based on the history of activities of TC 86 and SC. Mr. Kubota gave a talk entitled Launch of Digital Broadcasts and the Future of Broadcasting. After talking about technical developments and the history of the transition from satellite digital broadcasts to terrestrial digital broadcasts, he explained the possibilities of technologies in the near future: more advanced digital broadcasts, super high vision and integral 3D TV. Concluding the symposium, Ichiro Yamashita (Advisory Ofcer, NTT Electronics Techno Corporation) began with his own experience with submarine cables, as he talked about building friendships through OITDA s standardization activities along with the technology transition from analog to digital, and his expectations for continuing development of those activities. In the informal discussion after closure, a greeting was given by Professor Mitsutoshi Hatori (Chuo University),
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who will resign as Chairman of the Fiber Optics Standardization Committee. After he looked back at nearly 20 years of standardization activities and provided a wealth of suggestions for the future, people attending held active discussions with all the speakers.

No.

Dates

Titles

Invited speakers Prof. Masataka NAKAZAWA, Ph.D. Tohoku University, Research Institute of Electrical Communication, Ultrahighspeed Optical Communication Laboratory MASAKATSU NAKAJIMA GOSAT Project Team, Space Applications Mission Directorate, Japan Aerospace Exploration Agency

299

Recent progress in Tuesday, Ultrahigh-speed optical Apr. 15, solution transmission and a 2008 coherent QAM optical transmission Tuesday, The environmental May 20, observation from the 2008 satellite with Laser Radar

300

301

Masaaki Fujii Tuesday, Real-time chemical analysis Professor, Chemical Resources Jun. 17, for environment and history Laboratory, Tokyo Institute of analyzer of a single particle 2008 Technology High Power Red Tuesday, Semiconductor Lasers and Jul. 15, Their Application For Next 2008 Generation Display Systems A study example and the Tuesday, development example of Aug. 26, the laser in the eld of 2008 construction Tuesday, Technology trend of Sep. 16, architecture for 2008 communication systems Tuesday, Oct. 21, Web Universal Design 2008 Shoji Hirata General Manager, Advanced Light Technology Department, Core Technology Development Group, Sony Cooperation KAORI NAGAI, Dr. Eng. Research Engineer Building System and Material Research Section, Building Engineering Research Institute Technology Center, TAISEI CORPORATION Shinji Nishimura, Ph. D. Department Manager, Network Systems Research Dept., Hitachi, Ltd., Central Research Laboratory Masahiro Watanabe, Ph. D. Human Interaction Project, NTT Cyber Solutions Laboratories, Nippon Telegraph and Telephone Corporation

302

303

304

305

306

Ph. D SUGIYAMA, Masakazu Nano-lithography and Associate Professor, Institute of Tuesday, nano-analysis at the Engineering Innovation, Department of Nov. 18, University of Tokyo: public 2008 Electronic Engineering, School of service and its application Engineering, The University of Tokyo Current status and outlook Tuesday, for realization of the green Dec. 16, emission semiconductor 2008 lasers Tuesday, Application of Laser Jan. 20, Source for Ophthalmic 2009 Surgery Device KATSUMI KISHINO, DR. ENG. Professor of Engineering and Applied Sciences, Sophia University KENICHI HAYASHI Senior Manager, Engineering Development Dept. R&D Div., Manager, Laser Research Laboratory, NIDEK CO., LTD. Yasuhiro Koike, Ph.D. Professor, Faculty of Science and Technology, Keio University / Research Director, ERATO-SORST Koike Photonics Polymer Project, Japan Science and Technology Agency (JST)

307

308

309

Tuesday, Photonics Polymers for Feb. 17, Fiber To The Display 2009

310

Dr.SHIZUO TOKITO Tuesday, Latest trend and prospect of Senior Research Engineer, Materials Mar. 17, organic light-emitting diode Science & Advanced Devices Science & 2009 displays Technical Research Laboratories, Japan Broadcasting Corporation

Educational and Public Relations Activities

Seminars are held on the third Tuesday of every month. Lecturers invited to the seminars are researchers and engineers in the optoelectronic industry and technologies. They provide easily understood explanations about topics and the latest information on the theme of optoelectronic technologies. The following table lists details of the seminars held in FY 2008. InterOpto 08 (International Optoelectronic Exhibition 2008) held its 30th anniversary event over three days from September 10 (Wednesday) to 12 (Friday), 2008 at Makuhari Messe International Convention Complex in Chiba. In the exhibition, a comprehensive display of optoelectronic technologies and their products from fundamentals to applications were made under the subtitle International Technology Exhibition of Exciting New Optoelectronic Technologies, Lasers, Photonics and Optical Device Products. In this year s exhibition, a total of 109 companies, both optoelectronic manufacturers and traders, operated a total of 182 booths. There were 75 domestic companies with 103 booths and 34 foreign companies with 79 booths. There were a total 6,123 registered participants during these 3 days. Foreign industry associations joining the exhibition included Optical Society of America, IEEE Lasers and Electro-Optics Society and SPIE from the United States, Photonics Industry & Technology Development Association (Taiwan), and Korea Association for Photonics Industry Development. Foreign private companies from 5 countries/ regions had their own exhibits, consisting of 7 American, 1 Korean, 1 Singaporean, 2 Taiwanese and 2 Chinese. Private companies also participated in the general booths of trading companies representing the UK, Canada, France, etc. In total, companies from 19 countries/regions participated, which provided the exhibition with the international atmosphere that is a feature every year. From Japan, national and municipal testing and research institutes and universities, such as the Photonics Research Institute of the National Institute of Advanced Industrial Science and Technology, Research Foundation for Opto-Science and Technology, Research Institute of Nanophotonics, Shizuoka University Faculty of Engineering, Tokyo Institute of Technology, Nara Institute of Science and Technology, Japan Women s University Faculty of Science - Kodate Laboratory, and the Graduate School for the Creation of New Photonics Industries prepared their own booths and exhibited their most advanced optical research. This InterOpto was born in 1979 as a laser technology exhibition, changed its name to Opto Electronics Show in 1982, and changed again to its current name in 1986 to aim for a more international aspect. This is its 30th time since its birth, and the InterOpto 30th Anniversary Commemoration Speech was given on September 10 with the theme If you
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5.

Monthly Seminars

6.

InterOpto

try, you can by Nobel Prize Laureate Masatoshi Koshiba (Chairman of Heisei Foundation for Basic Science, Professor Emeritus of The University of Tokyo). On September 11, a talk with the theme Future of Optoelectronic Technologies was given by Teruo HIRUMA (Chairman of the Board and CEO, Hamamatsu Photonics K.K.), who has deep historical knowledge of optoelectronic technologies and industries. Optoelectronic Technology Exhibition Booths Attracting Attention and Seminars on Optoelectronic Technologies Attracting Attention began last year, and were greatly expanded this year. These utilize the strengths of OITDA which gathers the latest information on optoelectronic technologies. There were 26 small exhibit booths and 22 seminars recommended by OITDA s Optoelectronic Trend Research Committee, selected from technology and development projects in small and medium companies, universities, etc. recruited by OITDA. Grouped by topic, there were lasers, LEDs, optical ber, communication, processing, optical devices, etc. These covered issues now crying out for green IT such as global environmental protection, energy conservation, food problems, etc. Looking at the seminar themes and exhibited technologies, we see Vegetation Industrial Use Light Sources, New Energy Cycle by Magnesium, Low Power Consumption Displays, etc. The same things are incorporated in some industrial products, but in terms of uses, exhibits and seminars have steadily increased which are more closely connected to our lives, concerning the global environmental eld, bio and medical welfare eld, agriculture and the seafood eld. These showed new indicators and directions of technology developments which will push the optoelectronic industry forward in the future. An Exhibitors Seminar with simultaneous translation was organized as this exhibition s annual event. Among 6 seminars in total, 3 were given by the foreign lecturers, which illustrated the active interest of foreign manufacturers in the Japanese market. The Optoelectronic Technology Trend Seminar on September 10 and the Optoelectronic Industry Trend Seminar on September 11 were popular as usual. A total 1,890 people attended the 30th year anniversary commemoration speech and four seminars. Related to OITDA, an OITDA booth was set up with a panel exhibit of the various projects which OITDA undertakes, also exhibiting its reports. The Research Institute of High Efciency Networks and Research Institute of Nanophotonics are being promoted by OITA as national projects, and each exhibited in small booths showing their project s R&D results. Four companies to which OITDA outsourced development nishing last scal year also exhibited in the above-mentioned Optoelectronic Technology Exhibition Booths Attracting Attention and their exhibits were introduced in Seminars on Optoelectronic Technologies Attracting Attention : a spectrum controllable tunable lter based on spatial light modulation (developed by Santec Corporation), the development of 266 UV laser optical

system for integration of repair systems (developed by Seiwa Optical Co., Ltd.), a high luminance photocoagulator using single mode ber for laser transmission (developed by Nidec Co., Ltd.), and a drug discovery research support and optical measurement system (developed by Brainvision Inc., nishing the previous scal year). InterOpto 09 will be held for three days from September 9 (Wednesday) to 11 (Friday), 2009. The venue will be the same as the previous year.

7.

The Sakurai Prize has been awarded to recognize pioneering roles in the optoelectronic industry and optoelectronic technology. This year it was awarded to the following two groups among 22 applicants for their achievements since 1998. The award Development and Practical Application of High Performance Hard Coat Technology for Blu-ray Disc was presented to Hajime Utsunomiya, Naoki Hayashida and Kazushi Tanaka of the TDK Corporation SQ Research Center, and to Hidetake Ito of the TDK Device Development Center. The award for Leading Research in Micro Solid-State Photonics was presented to Takunori Taira of the Institute for Molecular Science, National Institutes of Natural Sciences. The Sakurai Prize was established as a memorial to the former Director of OITDA, Dr. Kenjiro Sakurai, who played a major role in developing the optoelectronic industry, and for the purpose of promoting development of the optoelectronic industry and technology. In the course of the 23 times it has been offered the prize has been awarded to 18 individuals and 26 groups, totaling 102 people. Hajime Utsunomiya and others at the TDK Corporation SQ Research Center were honored because The new era s optical disk standard was quickly decided in favor of Blueray Disc (BD) in 2008. For BD optical disc to achieve its large 25GB storage capacity, one builds a 1.1mm thick polycarbonate substrate surface, a 0.1mm thin protective layer, and an extremely thin recording layer directly below. This is because an optical disk with a thin protective layer has the difcult problem of weakness against ngerprints and surface scratches. Thus, high performance hard coat technology containing ne silica powder was developed, succeeding in building a protective layer which is very hard and provides excellent protection vs. dirt, against scratches and ngerprints (dirt) on the optical disk surface. Practical application of large capacity BD optical disc with the superior economic aspect of not needing a protective jacket was achieved by this hard and durable protective layer formation technology with ngerprint and scratch resistance surpassing previous levels. This technology is not only applied to BD optical discs, but is also being used to raise the reliability of other optical disks. This is making large contributions to further strengthen the development of the optical disk
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23rd Kenjiro Sakurai Memorial Prize (Sakurai Prize)

industry in which Japan leads the world. Mr. Takunori Taira of the Institute for Molecular Science, National Institutes of Natural Sciences was honored because Miniaturization and higher performance are vital for practical applications of solid-state lasers. To achieve these, he sought newly expressed optical functions by microdomain structure control and surface control of laser media, thereby creating and leading the micro solid-state photonics eld. In particular, he made great contributions in fundamental construction and development of this eld, with his world leading proposal and achievement of microchip lasers such as ytterbium ceramics achieving higher performance and higher output, and achieving high output nonlinear optic wavelength conversion by a bulk quasi phase matching element. These results are making large contributions, such as use in practical applications micro coherent light sources ranging from UV to infrared, vital for fundamental measurement and processing equipment. The award ceremony for these 5 people was held after the closing of the 28th Symposium on the Optoelectronic Industry and Technology on December 3, 2008. At the ceremony, Dr. Teiji Uchida, Chairperson of the Kenjiro Sakurai Memorial Prize Committee (Professor, Research Institute of Science and Technology, Tokai University), reported on the selection process and handed out the certicates, medals and extra prizes to the awardees. After that, Messrs. Utsunomiya and Taira spoke as representatives of all awardees.

8.

The OITDA issued OptoNews , Standardization News , Annual Technical Report 2007 (FY 2007 annual digest of the aforesaid various kinds of reports) . The OITDA website has been open since 1996, receiving 92,100 internet access in FY2008. Printed matters marked with asterisks (*) below were issued and distributed to the public with partial subsidization of JKA. 8.1 OptoNews Vol. 2, No. 3 (2008) (published on the website on May 16): Research & Analysis, Technology Trend, Report of International Conferences, etc. Vol. 2, No. 4 (2008) (published on the website on August 1): Inaugural greeting of the OITDA Chairman, Feature article of InterOpto 08, etc. Vol. 2, No. 5 (2008) (published on the website on September 25): Activity Report on InterOpto 08, etc. Vol. 2, No. 6 (2008) (published on the website on November 17): International Optoelectronics Associations Meeting Report, etc.

Public Relations (Publications, Website)

Educational and Public Relations Activities

Vol. 3, No. 1 (2009) (published on the website on January 14): New Year annual comments, Symposium on Optoelectronic Industry and Technology, The 24th Kenjiro Sakurai Memorial Prize, etc. Vol. 3, No. 2 (2009) (published on the website on May 16): Survey on Domestic Production of Optoelectronic Industry, etc. 8.2 Annual Technical Report 2007 (in Japanese and in English) * 8.3 Optoelectronics Standardization News (for members of the Organization for Standardization) No. 88 (May, 2008): Activity Report of Field-specialized Standardization Committee, etc. No. 89 (October, 2008): FY 2008 Standardization General Committee Meeting, etc. 8.4 OITDA website (http://www.oitda.or.jp) The OITDA provides the public in the optoelectronics

eld with various information including project plans and reports as well as announcements on InterOpto, symposiums, seminars, Study Group meetings, and Discussion sessions. New and updated information available on the OITDA website: Domestic Production in the Optoelectronics Industry: Optoelectronic Industry Trends Report Optoelectronic Technology Trends Report Supporting Venture Businesses InterOpto 08 Symposium on the Optoelectronics Industry and Technology The 24th Kenjiro Sakurai Memorial Prize Standardization Activities: Development of drafts of JIS standards and Technical Paper List R&D Project (Development of Next-Generation HighEfciency Network Device Technology and Innovative Nanophotonics Components Development Project) Information services for Supporting Members: OptoNews, Annual Report, Flash Reports on International Conferences, Press Releases, and so on.

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Main Committees in FY 2008

Committee/WG Steering Committee Optoelectronic Industry Trend Research Committee Optical Communication Research Committee Optical Storage Research Committee Optical Input/Output Research Committee Display Research Committee Photovoltaic Energy Research Committee Laser Processing Research Committee Optical Sensing and Measurement Research Committee Statistics Analysis Research Committee Optoelectronic Technology Trend Research Committee Optical Materials/Devices WG1 Optical Communication Network WG2 Optical Storage/Information Processing WG3 Display WG4 Human Interface WG5 Optical Processing/Measurement WG6 Photovoltaic Energy WG7 Medical Optoelectronic Industry and Technology WG8 Patent Committee Technological Strategy Development Optoelectronic Technology Roadmap Development Committee Agri-Photonics Breakthrough Technology Committee Silicon Photonics Breakthrough Technology Committee Support of New Business Initiatives Committee Development Project Examination and Evaluation Committee Optoelectronic Industry Technology Standardization General Committee Fiber Optics Standardization Committee Administrative Advisory Subcommittee Dynamic Module Subcommittee Intra-Building Optical Wiring Subcommittee Optical Fiber Standardization Committee Optical Connector Standardization Committee Optical Passive Components Standardization Committee Optical Active Device Standardization Committee Optical Amplier Standardization Committee Optical Subsystem Standardization Committee Optical Measuring Instrument Standardization Committee TC 76/Laser Safety Standardization Committee ISO/TC172/SC 9 Japanese National Committee ISO/TC 172/SC 9/WG 7 Japanese National Committee Optical Disk Standardization Committee Maintenance Subcommittee The First Media Subcommittee MO The Second Media Subcommittee PC The Third Media Subcommittee ROM Format Subcommittee New Type Solar Cell Standardization Committee IEC/TC 82/WG 2 Japanese National Committee Committee of International Standardization Proposal for Evaluation Methods of Polymer Optical Waveguide P Project Committee of International Standardization Proposal for Mechanical Reliability Evaluation Method for SFP Small Form Pluggable Optical Transmitter Module W-Project Committee of International Standardization Proposal of Laser Diodes for Sensing Applications D-Project Laser Safety School Steering Committee Laser Equipment Engineers Examination Committee Kenjiro Sakurai Memorial Prize Committee 4 5 5 1 2 1 3 3 6 6 6 8 9 9 5 5 6 5 2 0 3 0 7 4 2 9 4 4 5 24 5 11 6 5 46 20 8 14 16 21 18 17 13 17 12 15 28 16 6 20 9 6 10 11 10 21 24 18 Y.Komachi Osaka Inst.of Tech. F.Yokogawa Pioneer M.Maeda Fujitsu T.Sugaya Toshiba M.Irie Osaka Sangyo Univ. Y.Komachi Osaka Inst. Tech. H.Takakura Ritsumeikan Univ. K.Nomoto Sharp T.Kaino Tohoku Univ. T.Kagawa Shonan Inst.of Tech. M.Fukuda Toyohashi Univ.of Tech. T.Arai Chuo Univ. M.Ikeda Hokkaido Univ. T.Uchida Tokai Univ. Y.Arakawa Univ.of Tokyo H.Yajima Meiji Univ. F.Kannari Keio.Univ. N.Yoshida Toshiba M.Hatori Univ.of Tokyo M.kawase Chitose Inst., Sci.Tech. Y.Inoue NTT S.Furukawa Yazaki S.Tomita NTT R.Nagase NTT T.Mizumoto Tokyo Inst.of Tech. J.Yoshida Chitose Inst., Sci.Tech. M.Yamada Osaka Prefecture Univ. H.Takara NTT K.Noguchi Tohoku Inst.of Tech. Y.Arakawa Univ.of Tokyo Number of Meeting 2 2 4 3 5 4 3 4 5 2 3 4 3 5 5 6 3 4 6 5 Number of Members 12 11 6 7 4 7 15 7 7 3 53 7 7 7 7 6 7 6 5 15 Chairperson, etc. Afliation K.Kyuma Mitsubishi Electric Corp. T.Kamiya NAID Y.Yamabayashi Chitose Inst., Sci.Tech. A.Itoh Nihon Univ. N.Ishikawa Canon K.Kurokawa Tokyo Inst.Tech. T.Arai Chuo Univ. M.Itoh Univ.of Tsukuba K.Ishida Chitose Inst., Sci.Tech. Y.Nakano Univ.of Tokyo T.Tsuchiya Hitachi H.Takara NTT T.Nakano AIST M.Uchidoi Panasonic T.Miyashita Ricoh M.Fujita ILT M.Kondo AIST K.Awazu Osaka Univ. H.Ito AIST

As of March 31, 2009

Secretariat Nakajima, Sugiyama Murata, Okuma Kamiyama, Okuma Tatsuno, Okuma Inada, Okuma Tsuda, Okuma Tanada, Okuma Kuroda, Okuma Okuma, Murata Yamagishi Urino Kuroda Murata Yamaguchi Inada Tanada Tsuda Kawai, Yamagishi Yamaguchi Urino, Tatsuno Urino Tatsuno, Urino Kamiyama, Kawakubo Murata, Kamiyama, Yamaguchi, Yamagishi, Fujii, Tsuda, Tanada Masuda, Kobayashi Hirano Hirano Urino Inada Tanada Kawai,Uriono,Kamiyama Murata Fujii, Inada Inada Tanada Kamiyama Kuroda Masuda, Kobayashi Masuda, Kobayashi Yamaguchi, Kawai, Yamagishi Yamaguchi Kawai, Yamagishi Yamaguchi Kawai, Yamagishi Kawai, Yamagishi Tsuda Tsuda Fujii, Murata

S.Mikoshiba Univ. of Electro-Communications Yamaguchi, Okuma

M.Saruwatari National Defense Academy A.Arimoto Univ.of Tokyo

2 3 1 2 1

9 14 15 15 8

Tanada Masuda Kawakubo, Okuma Okuma, Kawakubo Kamiyama, Tatsuno

86

As of March 31,2009
Committee/WG Project Executive Committee for Next Generation Network Device Planning Committee Technical Committee Standardization Committee Next Generation Network Device Project Representative Committee Technical Committee Intellectual Property Right Working Group Terabyte Optical Storage Project Executive Committee Representative Committee Technical Committee Practical Application Committee Intellectual Property Right Working Group International Standardization Working Group Market Creation Working Group Nano-mastering Technology Development Project for Terabyte Storage Practical Application Committee Intellectual Property Right Working Group International Standardization Working Group Market Creation Working Group Sub-Terabyte Optical Memory Project Representative Committee Technical Committee Coordination Committee Market Creation Working Group Intellectual Property Right Working Group International Standardization Working Group Advisory Group Committee Nanophotonics Components Development Organization Representative Committee Technical Committee Planning Committee Intellectual Property Right Working Group International Standardization Working Group Market and Practical Affairs Working Group 2 9 0 2 0 0 6 13 6 6 6 6 M.Ohtsu Univ.of Tokyo H.Miyamoto Hitachi K.Kuriyama Pioneer H.Hatano Konica Minolta Opto Executive Committee 0 0 0 0 0 0 0 3 12 12 13 5 14 5 6 8 M.Koshoubu Pioneer R.Imanaka Osaka Univ. A.Watanabe NTT AFTY T.Toshima NTT Electronics Executive Committee 0 0 0 0 0 5 5 5 5 13 Technical Committee 0 0 0 0 0 0 0 10 10 8 15 12 12 12 12 7 M.Ohtsu Univ.of Tokyo T.Uchiyama Fujitsu Laboratories A.Watanabe NTT AFTY T.Toshima NTT Electronics R.Imanaka Osaka Univ. T.Murakami OITDA E.Takeda Hitachi Murakami 2 5 2 5 14 5 K.Oyama NEC Y.Arakawa Univ.of Tokyo Executive Committee 0 6 2 2 9 15 8 7 T.Asami Univ.of Tokyo T.Asami Univ.of Tokyo T.Asami Univ.of Tokyo T.Kunio NEC Executive Committee Number of Meeting 1 Number of Members 7 Chairperson, etc. Afliation Secretariat

14243 14243 144424443 1442443 14444244443 144424443

T.Hayashi ALAXALA Networks

Ono, Y.Ito

Ono, Y.Ito

Sugimori, Murakami

Sugimori

Sugimori

Sugimori, Murakami

Study Group Optical Disk Study Group Photonics Devices and Technology Study Group Optical Materials and Application Technology Study Group Photonic NGN Technologies Study Group Advanced Photo-Excited Materials Processing Study Group

Number of Meeting 6 6 4 5 5

Number of Members 71 93 56 74 65

Representative Afliation J.Tominaga AIST O.Wada Kobe Univ. M.Minakata Shizuoka Univ. T.Aoyama Keio Univ. M.Obara Keio Univ. Tanada Inada Fujii

Secretariat Kawai, Yamagishi

Kuroda

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Supporting Members
[Construction] Kinden Corporation [Textile & Pulp] Tomoegawa Paper Co., Ltd. Mitsubishi Rayon Co., Ltd. [Chemistry] Adachi New Industrial Co., Ltd. Konica Minolta Opto, Inc. JSR Corporation Showa Denko K.K. Shin-Etsu Chemical Co., Ltd. Nippon Steel Chemical Co., Ltd. Sumitomo Chemical Co., Ltd. Sumitomo 3M Limited Sumitomo Bakelite Co., Ltd. Daikin Industries, Ltd. Teijin Chemicals Ltd. Tosoh Corporation Nissan Chemical Industries, Ltd. Nippon Shokubai Co., Ltd. Zeon Corporation Fujilm Corporation Mitsui Chemicals, Inc. Mitsubishi Engineering - Plastics Corporation Mitsubishi Chemical Corporation Yamamoto Kogaku Co., Ltd. [Glass & Ceramics] Asahi Glass Co., Ltd. Corning International K.K. Covalent Materials Corporation Schott Nippon K.K. Sumitomo Osaka Cement Co., Ltd. Toyo Glass Co., Ltd. Nippon Sheet Glass Co., Ltd. Nippon Electric Glass Co., Ltd. Hoya Corporation [Steel & Non-Ferrous] Sumitomo Metal Mining Co., Ltd. Dowa Holdings Co., Ltd. Nippon Steel & Sumikin Welding Co., Ltd. [Electric Wire & Cable] Okano Electric Wire Co., Ltd. [Electronics & Electronic Appliances] Advantest Corporation Alps Electric Co., Ltd. Anritsu Corporation Ushio Inc. NTT Electronics Corporation FDK Corporation Oki Electric Industry Co., Ltd. Omron Corporation Kaga, Inc. Canare Electric Co., Ltd. Kyocera Corporation Kimmon Electric Co., Ltd. Santec Corporation Sanyo Electric Co., Ltd. Sanwa Denki Kogyo Co., Ltd. GSI Group Japan Corporation CCS Inc. Advanced PDP Development Center Corporation Sharp Corporation Stanley Electric Co., Ltd. Seiko Epson Corporation Sony Corporation DDK Ltd. Tyco Electronics AMP K.K. Taiyo Yuden Co., Ltd. Tajimi Electronics Co., Ltd. TDK Corporation Digital Stream Corporation Tokyo Instruments Inc. Sigma Koki Co., Ltd. Citizen Technology Center Co., Ltd. Shimadzu Corporation Suruga Seiki Co., Ltd. Seiko Instruments Inc. Seikoh Giken Co., Ltd. Dainippon Screen Mfg. Co., Ltd. Topcon Corporation Nikon Corporation Nidek Co., Ltd. Photonics Corporation [Precision Instrument] Olympus Corporation Canon Inc. Konica Minolta Technology Center Inc. Hitachi Metals, Ltd. Hitachi, Ltd. Hitachi Maxell, Ltd. Hirose Electric Co., Ltd. FiBest Limited Fujitsu Limited Fuji Electric Holdings Co., Ltd. Honda Tsushin Kogyo Co., Ltd. Mitsubishi Electric Corporation Murata Mfg. Co., Ltd. Yamaichi Electronics Co., Ltd. Yokogawa Electric Corporation Rohm Co., Ltd. [Others] [Machinery] IHI Corporation Ulvac, Inc. Komatsu Ltd. JTEKT Corporation ShinMaywa Industries, Ltd. Brother Industries, Ltd. SWCC Showa Holdings Co., Ltd. Sumitomo Electric Industries, Ltd. Tatsuta Electric Wire & Cable Co., Ltd. Totoku Electric Co., Ltd. Hitachi Cable, Ltd. Fujikura Ltd. The Furukawa Electric Co., Ltd. Mitsubishi Cable Industries Ltd. NEC Corporation NEC Glass Components, Ltd. Victor Company of Japan, Ltd. Japan Radio Co., Ltd. Lite-on Japan Ltd. Pioneer Corporation Hakusan Mfg. Co., Ltd. Panasonic Corporation Panasonic Electric Works Co., Ltd. Hamamatsu Photonics K.K. Semiconductor Energy Laboratory Co., Ltd. Toshiba Corporation Toshiba Matsushita Display Technology Co., Ltd. OpNext Japan, Inc. Japan Aviation Electronics Industry, Ltd. The Nippon Signal Co., Ltd.

(As of March 31, 2009) Fuji Xerox Co. Fujinon Corporation Hoya Corporation Optical Technology Center Moritex Corporation Ricoh Company, Ltd. [Commercial & Advertisement] Advanced Communication Media Co., Ltd. The Optronics Co., Ltd. Hakuto Co., Ltd. Mabuchi S&T Inc. Marubun Corporation Yazaki Corporation [Electric Power] Central Research Institute of Electric Power Industry The Tokyo Electric Power Co., Ltd. [Other Manufacturing] Ceratec Japan Co., Ltd. Dai Nippon Printing Co., Ltd.

Asahi Research Center Co., Ltd. NTT Advanced Technology Corporation Granopt Ltd. KDDI R&D Laboratories Inc. Kogyo Tsushin Co., Ltd. Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) Network Photonics Research Center, National Institute of Advanced Industrial Science and Technology (AIST) Nippon Telegraph and Telephone Corporation Fujimori Kogyo Co., Ltd. Plasma Laboratory, Musashi Institute of Technology Institute for Laser Technology

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Published by Optoelectronic Industry and Technology Development Association(OITDA) 1-20-10, Sekiguchi, Bunkyo,Tokyo, JAPAN 112-0014 Phone: +81 3 5225 6431 Fax: +81 3 5225 6435 URL: http://www.oitda.or.jp

The photograph in the cover was taken by Hitoshi Watanabe