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The MOS Capacitor
• Electrostatics
1
Bulk Semiconductor Potential ψB
qψ B ≡ Ei (bulk ) − E F
• p-type Si: Ec
kT
ψB = ln( N A / ni ) > 0 EF
qψ B
Ei
q Ev
• n-type Si: EF
Ec
kT |qψB|
ψ B = − ln( N D / ni ) < 0 Ei
q Ev
Ec
Ef
N +polysilicon
Ec
P-Silicon body
Ev
9eV
Ev
SiO2
gate body
Ev
(a) (b)
How does one arrive at this energy-band diagram?
Spring 2003 EE130 Lecture 21, Slide 4
2
Guidelines for Drawing MOS Band Diagrams
• Fermi level EF is flat (constant with distance x) in the Si
– Since no current flows in the x direction, we can assume that
equilibrium conditions prevail
3
Voltage Drops in the MOS System
• In general,
VG = VFB + Vox + ψ s
where
qVFB = φMS = φM – φS
Vox is the voltage dropped across the oxide
(Vox = total amount of band bending in the oxide)
ΦM = ΦS
4
General Case: Different Work Functions
Flat-Band Condition
E0
χSiO2 =0.95 eV
Ec
qΦM
3.1 eV 3.1 eV χSi qΦs = χSi + (Ec –EF)
Ec, EF Ec
VFB
Ef
Ev
Ev
9 eV
P-type Si
N+ poly-Si SiO
E0 : Vacuum level
4.8 eV
E0 – Ef : Work function
E0 – Ec : Electron affinity
Si/SiO2 energy barrier Ev
5
MOS Band Diagrams (n-type Si)
Decrease VG (toward more negative values)
-> move the gate energy-bands up, relative to the Si
decrease VG decrease VG
6
Accumulation (n+ poly-Si gate, p-type Si)
M O S
VG < VFB
3.1 eV | qVox |
Ec= EFM
GATE Ev
- - - - - - |qVG |
|qψs| is small, ≈ 0
+ + + + + +
VG +_ Ec
p-type Si 4.8 eV EFS
Ev
+ + + + + +
tox Vox = t = −Qacc / Cox
ox ox
+
VG _ Qacc (C/cm2) where Cox ≡ ε SiO2 / tox
p-type Si (units: F/cm2)
7
Depletion (n+ poly-Si gate, p-type Si)
M O S
VT > VG > VFB
qVox
Wd
Ec
GATE EFS
+ + + + + + 3.1 eV qψ s Ev
- - - - - - qVG
+
VG _ Ec= EFM
p-type Si
Ev 4.8 eV
8
Voltage Drops in Depletion (p-type Si)
From Gauss’ Law:
GATE ox = −Qdep / ε SiO2
+ + + + + +
- - - - - - Vox = t = −Qdep / Cox
ox ox
VG +_
Qdep (C/cm2)
Qdep is the integrated
p-type Si
charge density in the Si:
Qdep = − qN AWd = − 2qN Aε Siψ s
2 qN Aε siψ s
VG = VFB + ψ s + Vox = VFB + ψ s +
Cox
Spring 2003 EE130 Lecture 21, Slide 17
2 qN Aε siψ s
VG = VFB + ψ s +
Cox
• Solving for ψS, we have
9
Threshold Condition (VG = VT)
• When VG is increased to the point where ψs reaches
2ψΒ, the surface is said to be strongly inverted.
(The surface is n-type to the same degree as the bulk is p-type.)
This is the threshold condition.
VG = VT ⇒ ψ s = 2ψ B
E i (bulk ) − Ei ( surface) = 2[Ei (bulk ) − E F ]
Ei ( surface ) − EF = −[Ei (bulk ) − E F ]
⇒ nsurface = N A
Ec= EFM
Ev
10
Threshold Voltage
• For p-type Si:
2 qN Aε siψ s
VG = VFB + ψ s + Vox = VFB + ψ s +
Cox
2qN Aε Si ( 2ψ B )
VT = VFB + 2ψ B +
Cox
VG +_ x
p-type Si
ψ s ≅ 2ψ B
Significant density of mobile electrons at surface 2ε si ( 2ψ B )
(surface is n-type) Wd ≅ Wdm =
qN A
Spring 2003 EE130 Lecture 21, Slide 22
11
Inversion Layer Charge Density (p-type Si)
VG = VFB + ψ S + Vox
(Qdep + Qinv )
= VFB + 2ψ B −
Cox
2qN Aε s (2ψ B ) Qinv
= VFB + 2ψ B + −
Cox Cox
Qinv
= VT −
Cox
12