1. A silicon diode measures a low value of resistance with the meter leads in both positions.

The trouble, if any, is A. B. C. D. the diode is open. the diode is shorted to ground. the diode is internally shorted. the diode is working correctly.

Answer & Explanation Answer: Option C

2. Single-element semiconductors are characterized by atoms with ____ valence electrons. A. B. C. D. E. 3 4 5 2 none of the above

Answer & Explanation Answer: Option B

3. Under normal conditions a diode conducts current when it is A. C. reverse-biased. avalanched. B. D. forward-biased. saturated.

Answer & Explanation Answer: Option B

4. A diode conducts when it is forward-biased, and the anode is connected to the ________ through a limiting resistor. A. B. C. D. positive supply negative supply cathode anode

Answer & Explanation Answer: Option A

5. As the forward current through a silicon diode increases, the internal resistance A. B. C. increases. decreases. remains the same.

Answer & Explanation Answer: Option B 6. The movement of free electrons in a conductor is called A. C. voltage. recombination. B. D. current. equilibrium.

Answer & Explanation Answer: Option B

7. For a forward-biased diode, the barrier potential ________ as temperature increases. A. decreases

B. C.

remains constant increases

Answer & Explanation Answer: Option A

8. The wide end arrow on a schematic indicates the ________ of a diode. A. B. C. D. ground direction of electron flow cathode anode

Answer & Explanation Answer: Option D

9. An n-type semiconductor material A. B. C. D. is intrinsic. has trivalent impurity atoms added. has pentavalent impurity atoms added. requires no doping.

Answer & Explanation Answer: Option C Explanation: N-type Semiconductor : An intrinsic semiconductor material is a poor conductor. When a small amount of pentavalent

impurity is added to the intrinsic material its conductivity rises sharply. This material formed after the addition of pentavalent impurity to the intrinsic semiconductor material is called Ntype material. Addition of small amount of pentavalent atoms in the intrinsic material provides large number of free electrons for conduction.

10. For a forward-biased diode, as temperature is ________, the forward current ________ for a given value of forward voltage. A. B. C. D. decreased, increases increased, increases increased, decreases decreased, decreases

Answer & Explanation Answer: Option B .

11. Which statement best describes an insulator? A. B. C. D. A material with many free electrons. A material doped to have some free electrons. A material with few free electrons. No description fits.

Answer & Explanation Answer: Option C

12. Effectively, how many valence electrons are there in each atom within a silicon crystal?

A. C.

2 8

B. D.

4 16

Answer & Explanation Answer: Option C

13. The boundary between p-type material and n-type material is called A. B. C. D. a diode. a reverse-biased diode. a pn junction. a forward-biased diode.

Answer & Explanation Answer: Option C

14. You have an unknown type of diode in a circuit. You measure the voltage across it and find it to be 0.3 V. The diode might be A. B. C. D. a silicon diode. a germanium diode. a forward-biased silicon diode. a reverse-biased germanium diode.

Answer & Explanation Answer: Option B

15. An ideal diode presents a(n) ________ when reversed-biased and a(n) ________ when forward-biased.

A. B. C. D.

open, short short, open open, open short, short

Answer & Explanation Answer: Option A 16. A reverse-biased diode has the ________ connected to the positive side of the source, and the ________ connected to the negative side of the source. A. B. C. D. cathode, anode cathode, base base, anode anode, cathode

Answer & Explanation Answer: Option A

17. What types of impurity atoms are added to increase the number of conduction-band electrons in intrinsic silicon? A. B. C. D. E. bivalent octavalent pentavalent trivalent none of the above

Answer & Explanation Answer: Option C

A. B. C. D. E.

type of semiconductive material the amount of doping the temperature all of the above type of semiconductive material and the amount of doping but not the temperature

Answer & Explanation Answer: Option D

20. A. B. C. D. is subjected to a large reverse voltage. is reverse-biased and there is a small leakage current. has no current flowing at all. is heated up by large amounts of current in the forward direction.

Answer & Explanation Answer: Option A 21. There is a small amount of current across the barrier of a reverse-biased diode. This current is called A. B. C. D. forward-bias current. reverse breakdown current. conventional current. reverse leakage current.

Answer & Explanation Answer: Option D

22. As the forward current through a silicon diode increases, the voltage across the diode A. B. C. D. increases to a 0.7 V maximum. decreases. is relatively constant. decreases and then increases.

Answer & Explanation Answer: Option C

23. Doping of a semiconductor material means A. B. that a glue-type substance is added to hold the material together. that impurities are added to increase the resistance of the material.

C. D.

that impurities are added to decrease the resistance of the material. that all impurities are removed to get pure silicon.

Answer & Explanation Answer: Option C

24. The forward voltage across a conducting silicon diode is about A. B. C. D. 0.3 V. 1.7 V. 0.7 V. 0.7 V.

Answer & Explanation Answer: Option D

25. The most common type of diode failure is a(n) ________. A. C. open resistive B. D. short [NIL]

Answer & Explanation Answer: Option A 26. What occurs when a conduction-band electron loses energy and falls back into a hole in the valence band? A. C. doping generation B. D. recombination [NIL]

Answer & Explanation Answer: Option B

27. The maximum number of electrons in each shell of an atom is A. B. C. D. 2. 2n2 where n is the number of the shell. 4. 8.

Answer & Explanation Answer: Option B

28. A silicon diode is forward-biased. You measure the voltage to ground from the anode at ________, and the voltage from the cathode to ground at ________. A. B. C. D. 0 V, 0.3 V 2.3 V, 1.6 V 1.6 V, 2.3 V 0.3 V, 0 V

Answer & Explanation Answer: Option B Explanation: For silicon diodes, the built-in potential is approximately 0.7 V. Thus, if an external current is passed through the diode, about 0.7 V will be developed across the diode such that the P-doped region is positive with respect to the N-doped region and the diode is said to be "turned on" as it has a forward bias. Therefore, 2.3 V - 1.6 V = 0.7 V. Hence the answer is correct.

29. The term bias in electronics usually means

A. B. C. D.

the value of ac voltage in the signal. the condition of current through a pn junction. the value of dc voltages for the device to operate properly. the status of the diode.

Answer & Explanation Answer: Option C 1. Determine the total discharge time for the capacitor in a clamper having C = 0.01 500 k . A. B. C. D. 5 ms 25 ms 2.5 ms 50 ms F and R =

Answer & Explanation Answer: Option B

2. Which element dictates the maximum level of source voltage?

A. B. C. D.

VZ IZM IZ None of the above

Answer & Explanation Answer: Option B

3. What type of diode circuit is used to clip off portions of signal voltages above or below certain levels? A. B. C. D. clipper or limiter clamper IC voltage regulator none of the above

Answer & Explanation Answer: Option A

4. Each diode in a center-tapped full-wave rectifier is ________ -biased and conducts for ________ of the input cycle. A. B. C. D. forward, 90 reverse, 180 forward, 180 reverse, 90

Answer & Explanation Answer: Option C

5. What is the voltage measured from the negative terminal of C4 to the negative terminal of the transformer?

A. B. C. D.

10 V 20 V 10 V 20 V

Answer & Explanation Answer: Option B

1 6. The output frequency of a full-wave rectifier is ________ the input frequency. A. B. C. D. one-half equal to twice one-quarter

Answer & Explanation Answer: Option C

7. PIV is which of the following?

A. B. C. D.

peak input voltage peak inverse voltage peak immediate voltage positive input voltage

Answer & Explanation Answer: Option B

8. Determine the peak value of the current through the load resistor.

A. B. C. D.

2.325 mA 5 mA 1.25 mA 0 mA

Answer & Explanation Answer: Option A

9. Determine the peak value of the output waveform.

A. B. C. D.

25 V 15 V 25 V 15 V

Answer & Explanation Answer: Option B

10. In a regulated supply, what term describes how much change occurs in the output voltage for a given change in the input voltage? A. B. C. D. load regulation voltage regulator line regulation ripple voltage

Answer & Explanation Answer: Option C 11. A short circuit has a ________ drop across its terminals, and the current is limited only by the surrounding network. A. B. C. 5V 0V 1V

D. Answer & Explanation Answer: Option B

12. Determine the peak for both half cycles of the output waveform.

A. B. C. D.

16 V, 4 V 16 V, 4 V 16 V, 4 V 16 V, 4 V

Answer & Explanation Answer: Option A

13. What is the peak inverse voltage across each diode in a voltage doubler? A. C. Vm 0.5Vm B. D. 2Vm 0.25Vm

Answer & Explanation Answer: Option B .

14. What is the VRRM (PIV rating) for the 1N4001 rectifier diode? A. B. C. D. E. 50 V 100 V 200 V 400 V none of the above

Answer & Explanation Answer: Option A

15. What type of diode circuit is used to add or restore a dc level to an electrical signal? A. B. C. D. clipper or limiter clamper IC voltage regulator none of the above

Answer & Explanation Answer: Option B 1. How much is the base-to-emitter voltage of a transistor in the "on" state? A. B. C. D. 0V 0.7 V 0.7 mV Undefined

Answer & Explanation Answer: Option B

2. How many layers of material does a transistor have? A. C. 1 3 B. D. 2 4

Answer & Explanation Answer: Option C

3. Which of the following equipment can check the condition of a transistor? A. B. C. D. Current tracer Digital display meter (DDM) Ohmmeter (VOM) All of the above

Answer & Explanation Answer: Option D

4. For what kind of amplifications can the active region of the common-emitter configuration be used? A. B. C. D. Voltage Current Power All of the above

Answer & Explanation Answer: Option D

5. In the active region, while the collector-base junction is ________-biased, the base-emitter is ________-biased. A. B. C. D. forward, forward forward, reverse reverse, forward reverse, reverse

Answer & Explanation Answer: Option C . 6. A transistor can be checked using a(n) ________. A. B. C. D. curve tracer digital meter ohmmeter Any of the above

Answer & Explanation Answer: Option D

7. What range of resistor values would you get when checking a transistor for forward- and reverse-biased conditions by an ohmmeter? A. B. C. D. 100 to a few k , exceeding 100 k to a few k

Exceeding 100 k , 100

Exceeding 100 k , exceeding 100 k 100 to a few k , 100 to a few k

Answer & Explanation

Answer: Option A

8. Calculate minority current ICO if IC = 20.002 mA and IC majority = 20 mA. A. B. C. D. 20 A A

0.002 2 nA 2 A

Answer & Explanation Answer: Option D Explanation:

9. What is (are) the component(s) of electrical characteristics on the specification sheets? A. B. C. D. On Off Small-signal characteristics All of the above

Answer & Explanation Answer: Option D

10. In which region are both the collector-base and base-emitter junctions forward-biased? A. B. Active Cutoff

C. D.

Saturation All of the above

Answer & Explanation Answer: Option C

11. An example of a pnp silicon transistor is a 2N4123. A. True B. False

Answer & Explanation Answer: Option B

12. Which of the following is (are) the terminal(s) of a transistor? A. B. C. D. Emitter Base Collector All of the above

Answer & Explanation Answer: Option D

13. Use this table of collector characteristics to calculate

ac

at VCE = 15 V and IB = 30

A.

A. C.

100 50

B. D.

106 400

Answer & Explanation Answer: Option A

14. Which of the following configurations can a transistor set up? A. B. C. D. Common-base Common-emitter Common-collector All of the above

Answer & Explanation Answer: Option D

15. What does a reading of a large or small resistance in forward- and reverse-biased conditions indicate when checking a transistor using an ohmmeter? A. B. C. D. Faulty device Good device Bad ohmmeter None of the above

Answer & Explanation Answer: Option A 16. Determine the value of A. B. 1.01 101 when = 100.

C. D.

0.99 Cannot be solved with the information provided

Answer & Explanation Answer: Option C

17. Transistors are ________-terminal devices. A. C. 2 4 B. D. 3 5

Answer & Explanation Answer: Option B

18. Calculate

dc

at VCE = 15 V and IB = 30

A.

A. C.

100 50

B. D.

116 110

Answer & Explanation Answer: Option D

19. Which of the following can be obtained from the last scale factor of a curve tracer?

A. B. C. D.

hFE
dc

ac

ac

Answer & Explanation Answer: Option D Let us discuss. View Answer Workspace Report Discuss in Forum 20. Calculate
ac

for IC = 15 mA and VCE = 5 V.

A. B. C. D.

200 180 220 None of the above

Answer & Explanation Answer: Option A 21. dc = ________ A. IB / IE

B. C. D.

IC / IE IC / IB None of the above

Answer & Explanation Answer: Option C

22. How many carriers participate in the injection process of a unipolar device? A. C. 1 0 B. D. 2 3

Answer & Explanation Answer: Option A

23. What are the ranges of the ac input and output resistance for a common-base configuration? A. B. C. D. 10 100 , 50 k 1 M 100 1 k

50 k 1 M , 10 10 100 k , 50

None of the above

Answer & Explanation Answer: Option A

24. What is the most frequently encountered transistor configuration? A. C. Common-base Common-emitter B. D. Common-collector Emitter-collector

Answer & Explanation Answer: Option C

25.

dc

for this set of collector characteristics is within ________ percent of

ac

A. C.

2 7

B. D.

5 10

Answer & Explanation Answer: Option D

26. Which of the following regions is (are) part of the output characteristics of a transistor? A. B. C. D. Active Cutoff Saturation All of the above

Answer & Explanation Answer: Option D

27. How many individual pnp silicon transistors can be housed in a 14-pin plastic dual-in-line package?

A. C.

4 10

B. D.

7 14

Answer & Explanation Answer: Option A

28. In what decade was the first transistor created? A. C. 1930s 1950s B. D. 1940s 1960s

Answer & Explanation Answer: Option B

29. Most specification sheets are broken down into ________. A. B. C. D. maximum ratings thermal characteristics electrical characteristics All of the above

Answer & Explanation Answer: Option D

30. For a properly biased pnp transistor, let IC = 10 mA and IE = 10.2 mA. What is the level of IB? A. B. C. 0.2 A 200 mA 200 A

D.

20.2 mA

Answer & Explanation Answer: Option C 31. What is (are) the component(s) of most specification sheets provided by the manufacturer? A. B. C. D. Maximum ratings Thermal characteristics Electrical characteristics All of the above

Answer & Explanation Answer: Option D

32. What is A. B. C. D.

dc

equal to?

IB / IE IC / IE IC / IB None of the above

Answer & Explanation Answer: Option C

33. List the types of bipolar junction transistors. A. B. C. ppn, npn pnp, npn npp, ppn

D.

nnp, pnp

Answer & Explanation Answer: Option B

34. What is the ratio of the total width to that of the center layer for a transistor? A. C. 1:15 15:1 B. D. 1:150 150:1

Answer & Explanation Answer: Option D

35. Which component of the collector current IC is called the leakage current? A. B. C. D. Majority Independent Minority None of the above

Answer & Explanation Answer: Option C Explanation: