Chapter 02

Bipolar Junction Transistors (BJTs)

2.1 Device Structure and Physical Operation
2.2 Current-Voltage Characteristics
2.3 BJT as an Amplifier
2.4 BJT Circuits at DC
2.5 Biasing in BJT Amplifier Circuits
2.6 Small-Signal Operation and Models
2.7 Single-Stage BJT Amplifier
2.8 The BJT internal Capacitances and High-Frequency Model
2.9 Frequency Response of the CE Amplifier
The Key point to solve the DC solutions:
1. If under active mode : the terminal currents
could be set to

V
BE
= 0.7 V; (for npn)
i
B
= i
B
; i
C
= | i
B
; and i
E
= (|+1) i
B

then by KVL, solve i
B
at first, and then to solve the node voltages
to verify the validity of the active operation.

2. If under saturation mode :

Let |V
CE
| = V
C,sat
= 0.2 V at first;
the terminal voltage V
B
=V
E
+0.7 and V
B
=V
C
+0.5 (for npn)

then by KCL, to solve the branch currents respectively.
Figure 5.32 A simple circuit used to illustrate the
different modes of operation of the BJT.
2.4 BJT Circuits at DC
BJT operation as a switch:
Hihg : OFF v
C
=V
CC
;
Low : Saturation v
C
=V
C,sat
2.2k
1.96
4.3
R 1.96mA I
R
0.7 5
1.96mA; I 10 I
be should current base the 10, of factor overdrive an For
0.196mA;

9.8mA
I
mA; 9.8
1K
0.2 10
I
0.2V V Let : sol
10. least at of factor overdrive
an with saturation in results that R Find
1k R 150; to 50 from ranging for : Ex
B B
B
B(EOS) B
min
B(EOS)
sat C,
sat C,
B
C
= = = =

= =
= =
=

=
=
=
+10V
+5V
Assumption: Let |V
BE
| = 0.7 V of a conducting transistor;
|V
CE
| = 0.2 V of a saturated transistor.
neglect the Early effect.
Ex: With the above assumptions, let |=100, find out the terminal
voltages and the branch currents.

[NPN Case]
Ex: For a PNP BJT case. The minimum value of | is specified to be 30.
To determine the voltages at all nodes and the currents through
all branches.
To verify which operation mode (active or saturation) is possible
at first!
Using active mode assumption,
then we can find
the transistor becomes
in saturation mode operation
violate the assumption
in the active mode operation
thus in saturation mode.
Ex: Assume |=100. To determine the voltages at all nodes and the
currents through all branches.
Using Thevenins theorem to find out the equivalent resistance;
Assume in active mode.
(12.78uA)
Ex: Assume |=100 for both Q
1
and Q
2
. To determine the node voltages
And the branch currents.
Assumed all in active mode.
5.5 Biasing in BJT Amplifier Circuits
Two obvious Bias schemes for BJT: (Not so good, because of variation)
Both result in wide variation in I
C
and hence in V
CE
;
Using a degenerating R
E
to stabilize the bias current.
Figure 5.43 Two obvious schemes for biasing the BJT: (a) by fixing V
BE
; (b) by fixing I
B
. Both
result in wide variations in I
C
and hence in V
CE
and therefore are considered to be bad. Neither
scheme is recommended.
R
E
degeneration for Bias:
Figure 5.44 Classical biasing for BJTs using a single power supply: (a) circuit; (b) circuit with
the voltage divider supplying the base replaced with its Thvenin equivalent.
1
R
R
V V
if
parameter r transisto of t independen
R
V
1
R
R
V V
I
B
E
BE BB
E
BB
B
E
BE BB
E
+
>>
>>

~
+
+

=
Using Two-Power-Supply Bias Scheme: (with degeneration R
E
)
Figure 5.45 Biasing the BJT using two power supplies. Resistor R
B
is needed only if the signal
is to be capacitively coupled to the base. Otherwise, the base can be connected directly to
ground, or to a grounded signal source, resulting in almost total |-independence of the bias
current.
To provide
an AC signal
blocking.
AC signal
1
R
R
V V
I
B
E
BE EE
E
+
+

=
Biasing Using a Collector-to-Base Feedback Resistor:
Suitable for the CE amplifier;
R
B
provides negative feedback, which helps to stabilize the
bias point.
1
R
R and V V if
r) transisto of t (indepeden
R
V
1
R
R
V V
I
V R
1
I
R I
V R I R I V
B
C BE CC
C
CC
B
C
BE CC
E
BE B
E
C E
BE B B C E CC
+
>> >>
~
+
+

+
+
+ =
+ + =
However, the value of R
B
determines the allowable signal
swing at the collector.
junction.
CB e between th swing
signal of range allowable
the determines R thus
R
1
I
R I V
Since
B
B
E
B B CB
+
= =
Biasing Using a Constant-Current Source:
Advantages: (a) the emitter current is independent of the values
of | and R
B
; (b) R
B
can be made large to keep the input resistance
high without adversely affecting bias stability. (c) to make the
design simple.
1
Q e,
2
Q e,
2 1
BE EE CC
REF c
A
A
K
is, that
; Q and Q of areas
emitter the of ratio the is K
since
R
V ) V ( V
I K I
=

=
=
2.6 Small-Signal Operation and Models
0.4 V V
operation, mode - active for
R I V V V
/ I I
/ I I
e I I
B C
C C CC CE C
C B
C E
T
/V
BE
V
S C
>
= =
=
=
=
T be
T
be
C
T
/V
be
v
C C
)
T
/V
be
(v )
T
/V
BE
(V
S
T
)/V
be
v
BE
(V
S
T
/V
BE
v
S C
be BE BE
V v if )
V
v
(1 I e I i
is, That
e e I
e I e I i
becomes current collector the
terminal; base at the applied is
v V v
ltgae emitter vo - base ous instantane total The
<< + ~ =
=
= =
+ =
+
Say, if v
be
s 10 mV small signal
C
I
C
i
BE
C
T
C
m
m
be m be
T
C
c
be
T
C
C c C C
v
i
V
I
g
is g uctance transcond the where
v g v
V
I
i
is current collector signal small The
v
V
I
I i I i
: AC DC current" total " on Based
=
c
c
= =
= =
+ = + =
+ =
Figure 5.49 Linear operation of the transistor under the small-signal condition: A small signal
v
be
with a triangular waveform is superimposed on the dc voltage V
BE
. It gives rise to a collector
signal current i
c
, also of triangular waveform, superimposed on the dc current I
C
. Here, i
c
=
g
m
v
be
, where g
m
is the slope of the i
C
v
BE
curve at the bias point Q.
C
A
o
o
m
T be
I
V
r
is know, we as , r resistance output The
finite. is resistance output the effect, Early the to Due
infinite". " is resistance output the Ideally,
: Resistance Output
. g uctance transcond with the
source" current controlled voltage " a as behaves r transisto the
V v
signals small for that suggests analysis above The
=
<<
Small-Signal Model Development:
.
I
V
v
i
r hand, other On the
I
V
) /V (I

i
v
r
is , r as denoted , resistance input signal - small The
v

g
v
V
I

1
i
is current base signal - small the Therefore,
i I v
V
I

I
i
is, that ,

i
i current base total The
: base at the resistance Input and current Base
B
T
1
be
B

B
T
T C m b
be

be
m
be
T
C
b
b B be
T
C C
B
C
B
=
|
|
.
|

\
|
c
c
=
= = =
= =
+ = + =
=

m m E
E
e
eb
e
be
e
e
be
T
E
be
T
C c
e
e E
c C C
E
E
g
1
g

I
V
)
i
v
(
i
v
r
by defined
be can it , r by emitter, the into looking emitter, and
base between resistance signal - small a denote we If
v
V
I
v
V
I

i
i
is current emitter signal - small the is, That
i I

i
i
is i current emitter total The
: Emitter at the Resistance Input the and current Emitter
~ = =

=
= = =
+ = + = =
e e
b
e

e e b be
r 1) ( r
i
i
r have we thus
r i r i v Since
+ = =
= =
T
C C
C m
be
c
v
v
be C m C be m C c c
c
C c C C c C C CC
C c C CC
C C CC C
C
V
R I
R g
v
v
A
is A amplifier this of gain voltage the Thus
)v R (g )R v (g R i v
is v voltage signal small The
R i V R i ) R I (V
)R i (I V
R i V v
is v voltage collector total The
signal) - (small : Gain Voltage
= =
= = =
= =
+ =
=
Small-Signal Models: Hybrid-t Model and T Model
From the above analysis, we find that we can separate
the signal and the DC quantities to simplify the analysis.
Figure 5.51 Two slightly different versions of the simplified hybrid-t model for the small-
signal operation of the BJT. The equivalent circuit in (a) represents the BJT as a voltage-
controlled current source (a transconductance amplifier), and that in (b) represents the BJT as
a current-controlled current source (a current amplifier).
[ Hybrid-t Model ]
Figure 5.52 Two slightly different versions of what is known as the T model of the BJT. The circuit
in (a) is a voltage-controlled current source representation and that in (b) is a current-controlled
current source representation. These models explicitly show the emitter resistance r
e
rather than the
base resistance r
t
featured in the hybrid-t model.
[ T Model ]
Note: both models can be viewed as
(a) voltage-controlled current source, and
(b) current-controlled current source types.
Steps to doing small-signal analysis:
C m
m E
T
e
m T
C
R g
g I
V
r
g
r
V
I
=

= = = =
v
m
C
A
gain voltage the say, , quantities required
the determine circuit to resulting the Analyze 5.
model. signal - small its of one with BJT the Replace 4.
circuit open source Current
circuit short source Voltage
: by sources DC the Eliminate . 3
; ; g
of values parameter the Calculate . 2
. I current collector DC get the and
) given a (for point operation dc the Determine . 1
o |
|
t
Ex 5.14: Assume |=100. Find the small-signal voltage gain v
o
/v
i
.
Obey |V
BE
|=0.7V
in active mode.
i C be m o
i i
BB

be
m

T
C
m
3.04v R v g v
0.011v v
R r
r
v
1.09K
92
100
g

r
92mA/V
25mV
2.3mA
V
I
g
= =
=
+
=
= = =
= = =
Small-Signal Model accounting for the Early Effect:
( )
I
V
I
V V
r
c
A
C
CE A
o
~
+
=
voltage-controlled current source current-controlled current source
2.7 Single-Stage BJT Amplifiers
Basic Structure:
Figure 5.59 Basic structure of the circuit used to realize single-stage,
discrete-circuit BJT amplifier configurations.
Constant-current drive;
R
B
for AC signal blocking.
<Amp. Proper>
<Amp. Proper>
<Amp. Proper> :
only transistor parameter
dependent.
<Amp. Proper>
<Amp. Proper>
<Amp. Proper>
The Common-Emitter (CE) Amplifier:
Figure 5.60 (a) A common-emitter amplifier using the structure of Fig. 5.59.
Coupling capacitors:
AC-short
Bypass capacitor:
AC-short
Figure 5.60 (b) Equivalent circuit obtained by replacing the transistor with its hybrid-t model.
) R r (if R //r R R
) r R (if r //r R //R R
i
v
R
C o C o C out
B B ib B
i
i
in
>> ~ =
>> ~ = =
Figure 5.60 (b) Equivalent circuit obtained by replacing the transistor with its hybrid-t model.
) //R //R (r g
v
v
A Thus
) //R //R (r v g v
v v
) r R (if v
R r
r
v
R R
R
v
L C o m
i
o
v
L C o m o
i
B sig
sig

sig
sig in
in
i
= =
=
=
>>
+
~
+
=
Figure 5.60 (b) Equivalent circuit obtained by replacing the transistor with its hybrid-t model.
vo
out L
L
v
C o C m
L C o m vo
L C o m v
A
R R
R
A Therefore
) R r (if R g
circuit) - open , R (let ) //R (r g A
) //R //R (r g A
: gain Voltage
+
=
>> ~
= =
=
Figure 5.60 (b) Equivalent circuit obtained by replacing the transistor with its hybrid-t model.
) //R //R (r g
R ) r (R
) r (R
v
) r (R
R ) r (R
v
v
v
G
: gain voltage Overall
L C o m
sig B
B
i
B
sig B
o
sig
o
v
+ +
+
=
+
+ +
=
Figure 5.60 (b) Equivalent circuit obtained by replacing the transistor with its hybrid-t model.
) //r (R g R g
i
i
A Therefore,
R i v v Because
v g i
is current collector circuit - short the 0, R As
: gain current circuit Short
B m in m
i
os
is
in i i
m os
L
= = =
= =
=
=

The Common-Emitter (CE) Amplifier with an Emitter Resistance:

Figure 5.61 (a) A common-emitter amplifier with an emitter resistance R
e
.
With a degeneration resistance R
e
Figure 5.61 (b) Equivalent circuit obtained by
replacing the transistor with its T model.
rule". reflection
- resistance the " as called
) R 1)(r (
i
v
1) (
1) /( i
v
i
v
R
where
//R R R
: base at the resistance Input
e e
e
i
e
i
b
i
ib
ib B in
+ + =
+ =
+
=
=
Degeneration Resistance Effect:
( )( )
( )
e m
m
e
e
e
e
e e
e ib
e ib
e ib
R g 1
/g
R
1
r
R
1
r 1
R r 1
) R (without R
included) R (with R
: R without and with R resistance input The
+ ~ + = + =
+
+ +
=
The Degeneration Effect:
( )
( )
( )
improved. tly significan is response frequency - high The 5.
. of value
on the dependent less is gain voltage overall The 4.
. R g 1 of factor by the
increased be can v of swing signal input the
, distortion linear - non same For the 3.
R g 1
A
A : collector to base from gain voltage 2.
R g 1 R R : resistance input 1.
e m
i
e m
v
*
v
e m ib
*
ib
+
+
=
+ =
2.8 BJT Internal Capacitance & HF model
BJT Junction Capacitance:
(a) Diffusion Cap. Forward Junction


(b) Depletion Cap. Reverse Junction
T
C
F m F
BE
C
F
BE
n
de
F
C F C
n
2
n
V
I
g
dv
di

dv
dQ
C
is e capacitanc diffusion signal - small The
electrons; of ime transit t forward the is where
i i
2D
W
Q
is region base in the charges carrier minority stored The (a)
= = =
= =
je de
0e
je je0
je0 je
m
0e
BE
je0
je
C C C
is e capacitanc junction emitter the model, - Hybrid In the
0.5) (~ junction EBJ of t coefficien grading the is m
and 0.9V); (~ in voltage - built the is V
voltage; zero at C of value the is C
where
ion) approximat bias, forward (in 2C C
bias) reverse (in
V
V
1
C
C
is emitter at the e capacitanc junction deplection The (b)
+ =
~
|
|
.
|

\
|

=
). 0.5 ~ 0.2 (~ t coefficien grading the is m
0.75V); (~ in voltage - built CBJ the is V
voltage; zero at C of value the is C
where
V
V
1
C
C
: C e Capacitanc Junction Base - collector The (c)
0C
0
m
0C
CB
0

|
|
.
|

\
|
+
=
The High-Frequency Hybrid-t Model :
Figure 5.67 The high-frequency hybrid-t model.
Junction Capacitances
Neutral region resistance +
Contact resistance+
Extrinsic region resistance

b
b
u m c
c
sC sC
r
1
I
) //C //C (r I V where
)V sC (g I
is I current collector circuit - short The
+ +
= =
=
Figure 5.68 Circuit for deriving an expression for h
fe
(s) ; I
c
/I
b
.

fe
0

0

0

m
m

m
b
c
fe
fe
r ) C (C
1
frequency dB - 3 a with response pole - single a has ) ( h
; of value frequency - low the is
where

j 1

)r C s(C 1

)r C s(C 1
r g
) C g (if
sC sC
r
1
g
sC sC
r
1
sC g
I
I
) ( h
is (s) h gain current signal - small The
+
= =
+
=
+ +
=
+ +
=
>>
+ +
~
+ +

= s
Figure 5.69 Bode plot for uh
fe
u.
(Hz)
) C (C 2
g
f
is f frequency cutoff the and
) C (C
g
r ) C (C
r g
r ) C (C
1

Thus

frequency ing correspond the
unity, to drops (s) h if
: bandwidth Gain Unity

m
T
T

m

m

0 T
0 T
fe
T
+
=
+
=
+
=
+
=
=

injection - high under I as f

Thus
injection - high under I as
is, That dependent. current collector the
becomes injection, level - high Under
I f
effective) (less I ) (I C
I
V
I
) (I g
as
] C ) (I [C 2
) (I g
) (I f
Since
: I on f of Dependence Current
C T
C F
F
C T
C C
C
T
C
C m
C
C m
C T
C T
+
|


=
+
=

Figure 5.70 Variation of f

T
with I
C
.
Under high-level
injection
C T
I f
2.9 Frequency Response of the CE Amplifier
Gain drop due to :
Blocking Effects of C
C1
, C
C2
, and C
E
;
Shorting Effects of Ct and C;
M
E C2 C1 M
L C o m
sig B
B
sig
o
M
C and C of because falloff A
: band frequency - High
; C and , C , C of because falloff A
: band frequency - Low
effect. capacitive e neglect th region, In this
) //R //R (r g
R ) //r (R
) //r (R
v
v
A
: midband at gain voltage overall The
+
= =
High-Frequency Response: (Omit C
C1
, C
C2
, and C
E
)
Low-Frequency Response: (Omit C
t
and C

)
The first pole: (by C
C1
)
The second pole:
(by C
E
)
The third pole:
(by C
C2
)
Special Design for f
p2
> f
p1
> f
p3
:

(20dB/decade)
[The End]
. C and , C , C by seen s resistance the are R and , R , R where
R C
1
R C
1
R C
1
2
1
f Let
: n calculatio handy For
C2 E C1 C2 E C1
C2 C2 E E C1 C1
L (

+ + ~