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[2012-2013] Submitted In Partial Fulfillment of Bachelor Degree in Technology Rajasthan Technical University, Kota
Submitted By: Rajiv Kumar (ECO9092) Department of Electronics & Communication Engineering Jaipur Engineering College Kukas, Jaipur-303101
CONTENTS
Introduction
INTRODUCTION:
Semiconductor memory is an electronic data storage device.
High speed
Low power
Reduced cost
High endurance
Short Range Atomic Order Low Free Electron Density High Activation Energy High Resistivity
Long Range Atomic Order High Free Electron Density Low Activation Energy Low Resistivity
MEMORY STRUCTURE
TO READ DATA Reading is done by simply measuring the resistance change. High resistance = reset state Low resistance = set state
PROGRAMMING
The OUM cell is programmed by application of a current pulse at a voltage above the Switching threshold The programming pulse drives the memory cell into a high or low resistance state, depending on magnitude of the pulse voltage.
Information stored in the cell is read out by measurement of the cells resistance
OUM devices are programmed by electrically altering the structure(amorphous or crystalline) of the small volume of chalcogenide alloy.
V-I CHARACTERISTICS
ADVANTAGES
Readwrite performance
High Speed
Endurance Low programming energy Process simplicity Cost CMOS embed ability Scalability
CONCLUSION
Non volatile OUM with fast read and write speeds, high endurance, low voltage/low energy operation, ease of integration and competitive cost structure is suitable for ultra high density ,stand alone and embedded memory applications. These attributes make OUM an attractive alternative to flash memory technology and potentially competitive with volatile memory technologies.
REFERENCES
OUM a 180 nm non volatile memory cell element technology for stand alone and embedded applications Stefan Lai and Tyler Lowery Current status of Phase change memory Stefan Lai
www.intel.com
www.ovonyx.com
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