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TRANSISTOR
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PENDAHULUAN
Transistor adalah suatu komponen aktif semikonduktor yang bekerjanya menggunakan pengolahan aliran arus elektron di dalam bahan tersebut. Transistor dapat berfungsi sebagai penguat arus maupun tegangan. Transistor merupakan peralatan yang mempunyai 3 lapis N-P-N atau P-N-P.
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JENIS2 TRANSISTOR
Ujung-ujung terminalnya berturut-turut disebut emitor, base dan kolektor. Base selalu berada di tengah, di antara emitor dan kolektor.
Understanding of BJT
C B
No current flows.
N
C B
C B
Current flows.
C B
When both junctions are biased.... Note that IB is smaller than IE or IC.
IB
N
IE
IC
N
C B
IE
IC = 99 mA
C
P
IB = 1 mA
99 ICmA IBmA 1
b =
= 99
IE = 100 mA
IC = 99 mA
C
P
IB = 1 mA
IE = I B + I C
= 1 mA + 99 mA
= 100 mA IE = 100 mA
IC = 99 mA
C B
IE = 100 mA
Circuit Symbols
Fundamental operation of pnp transistor and npn transistor is similar except for: role of electron and hole, voltage bias polarity, and Current direction
Current Relationships
Relations between IC and IE : = IC IE Value of usually 0.9998 to 0.9999, 1 Relations between IC and IB : = IC @ IC = IB IB Value of usually in range of 50 400 The equation, IE =IC + IB can also written in IC = IB IE = IB + IB => IE = ( + 1)IB The current gain factor , and is: = @ = . +1 -1
Current Gains
Common Base
a = IC/IE < 1
Common Emitter
b = IC/IB
a b b a ab b a( 1 b ) b a 1 b
1 b
Gain Factors
IC a IE
Usually given for common base amplifier
IC b IB
IE IB
IC =
VCE
RC
IC =
RC
RC
Load-line curve
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CONTOH SOAL
diketahui: Rc = 2k Rb = 150k Vcc= 10V Vbb= 4V = 100 Buat grafik antara Ic-Vce dan Ib-Vbe Vbe = 0,7 V
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Jawab: Loop 1 Vbb = ib Rb +Vbe 4 V = ib . 150 k + 0,7 V ib = (4 - 0,7) / 150000 ib = 0,022 mA saat ib = 0 maka Vbb = Vbe = 4 V saat Vbe = 0 maka Vbb / Rb = ib = 4 / 150 k = 0,0267 mA
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Loop 2 Vcc = ic Rc +Vce 10 V = ic.2 k + Vce ic = ib . = 0,022 mA . 100 = 2,2mA maka 10 V =2,2mA . 2 k + Vce Vce = 10 (2,2 . 2) = 5,6 V Saat ic = 0 maka Vcc = Vce = 10 V Saat Vce = 0 maka ic = Vcc / Rc = 10 / 2k = 5 mA
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COMON2
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Circuit Configuration
Common-emitter
It is called the common-emitter configuration because (ignoring the power supply battery) both the signal source and the load share the emitter lead as a common connection point.
Common-collector
It is called the common-collector configuration because both the signal source and the load share the collector lead as a common connection point. Also called an emitter follower since its output is taken from the emitter
resistor, is useful as an impedance matching device since its input impedance is much higher than its output impedance.
Common-base
This configuration is more complex than the other two, and is less common due to its strange operating characteristics. Used for high frequency applications because the base separates the input and output, minimizing oscillations at high frequency. It has a high voltage gain, relatively low input impedance and high output impedance compared to the common collector.
Base Biasing
It is usually not necessary to provide two sources for biasing the transistor.
The red arrows follow the base-emitter part of the circuit, which contains the resistor RB. The voltage drop across RB is VCC VBE (Kirchhoffs Voltage Law). The base current is then
VCC VBE IB RC
and
I C = bI B
Base Biasing
Use Kirchhoffs Voltage Law on the black arrowed loop of the circuit
VCC = ICRC + VCE So, VCE = VCC ICRC VCE = VCC bIBRC
Disadvantge
b occurs in the equation for both VCE and IC But b varies thus so do VCE and IC This shifts the Q-point (b-dpendent)
Example
Let RC = 560 W RB = 100 kW VCC = +12 V
@ 25 C VCC VBE 12 V - 0.7 V IB 113A RB 100,000 W
@ 25 C b = 100 @ 75 C b = 150
@ 75 C IB is the same IC = 16.95 mA VCE = 2.51 V IC increases by 50% VCE decreases by 56%
I C b I B (100)(113 A) 11.3 mA
VCE VCC b I B R C 12 V - (100)(113 A)(560 W ) 5.67 V
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DAERAH OPERASI
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BC and BE Junctions
Reverse & Reverse Forward & Forward
Mode
Open Switch Closed Switch
VCE = Small
Active Linear
VCE =
Moderate
Daerah Aktif
Daerah kerja transistor yang normal adalah pada daerah aktif, dimana arus IC konstans terhadap berapapun nilai VCE. Dari kurva ini diperlihatkan bahwa arus IC hanya tergantung dari besar arus IB. Daerah kerja ini biasa juga disebut daerah linear (linear region).
Jika hukum Kirchhoff mengenai tegangan dan arus diterapkan pada loop kolektor (Rangkaian CE), maka dapat diperoleh hubungan :
Dissipasi daya ini berupa panas yang menyebabkan naiknya temperatur transistor. Umumnya untuk transistor power sangat perlu untuk mengetahui spesifikasi PDmax. Spesifikasi ini menunjukkan temperatur kerja maksimum yang diperbolehkan agar transistor masih bekerja normal. Sebab jika transistor bekerja melebihi kapasitas daya PDmax, maka transistor dapat rusak atau terbakar.
Daerah Saturasi
Daerah saturasi adalah mulai dari VCE = 0 volt sampai kira-kira 0.7 volt (transistor silikon), yaitu akibat dari efek dioda kolektor-base yang mana tegangan VCE belum mencukupi untuk dapat menyebabkan aliran elektron.
Daerah Cut-Off
Jika kemudian tegangan VCC dinaikkan perlahan-lahan, sampai tegangan VCE tertentu tiba-tiba arus IC mulai konstan. Pada saat perubahan ini, daerah kerja transistor berada pada daerah cut-off yaitu dari keadaan saturasi (On) menjadi keadaan mati (Off). Perubahan ini dipakai pada system digital yang hanya mengenal angka biner 1 dan 0 yang tidak lain dapat direpresentasikan oleh status transistor OFF dan ON.
Breakdown Voltages
Output Characteristics
Plot IC as f(VCE, IB) Cutoff region (off)
both BE and BC reverse biased
Active region
BE Forward biased BC Reverse biased
Load Line
Slope of the load line is 1/RL
For a constant load, stepping IB gives different currents (IC) predicted by where the load line crosses the characteristic curve. IC = bIBworks so long as the load line intersects on the plateau region of the curve.
Example
We adjust the base current to 200 A and note that this transistor has a b = 100
Then IC = bIB = 100(200 X 10-6A) = 20 mA
Notice that we can use Kirchhoffs voltage law around the right side of the circuit
VCE = VCC ICRC = 10 V (20 mA)(220 W) = 10 V 4.4 V = 5.6 V
Example
IC 20 mA 30 mA 40 mA
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AC ANALISIS
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Pt. A corresponds to the positive peak. Pt. B corresponds to the negative peak. This graph shows ideal operation.
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BJT AMPLIFIER
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BJT as Amplifier
Common emitter mode Linear Active Region Significant current Gain Example: Let Gain, b = 100 Assume to be in active region -> VBE=0.7V Find if its in active region
BJT as Amplifier
VBE 0.7V I E I B I C ( b 1) I B VBB VBE 5 0.7 IB 0.0107mA RB RE *101 402 I C b * I B 100 * 0.0107 1.07mA VCB VCC I C * RC I E * RE VBE 10 (3)(1.07) (2)(101* 0.0107) 0.7 3.93V
VCB>0 so the BJT is in active region
Transistors as Amplifiers
BJT common emitter mode In Linear Active Region Significant current Gain
Transistors as Amplifiers
VBE = VB VE = 0.7V IB = VBB VB 4-2 = 40,000 RB = 50 A IC = b x IB = 80 x 50 A = 4mA
= 6.7 V
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BJT SWITCH
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Use of the cutoff and saturation regions in the I-V curves. VCE = Vcc - (IC)(RC) Vout = VCE
Vin Low Cutoff region No current flows Vout = VCE = Vcc Vout = High
Vin High Saturation region VCE small Vout = small Vout = Low
Transistors as Switches
Details
In Cut-off
All currents are zero and VCE = VCC
In Saturation
IB big enough to produce IC(sat) bIB
Example
a) What is VCE when Vin = 0 V? Ans. VCE = VCC = 10 V b) What minimum value of IB is required to saturate the transistor if b = 200? Take VCE(sat) = 0 V IC(sat) VCC/RC = 10 V/1000 W = 10 mA
Example
LED
If a square wave is input for VBB, then the LED will be on when the input is high, and off when the input is low.
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PENGUKURAN
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Heat sink
BJTs Testing
BJTs Testing
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RANGKAIAN APLIKASI
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Fungsi dan Penggunaan Transistor antara lain : - Penguat Arus dan Tegangan digunakan pada penguat - Pembangkit getaran (Osilator) Di Gunakan Pada Radio - Saklar listrik Di gunakan pada saklar : - Otomatis - Pengaman - Timer - dan lain-lain
Applications
Switching Amplification Oscillating Circuits Sensors
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TIPE-P BERFUNGSI SEBAGAI GATE TERJADI DEPLESI/PENIPISAN PADA CHANNEL KARENA GERAKAN ELEKTRON PADA GATE KONDUKSI ARUS TIDAK ADA SAMPAI SANGAT KECIL
TIPE-P BERFUNGSI SEBAGAI GATE DENGAN MEMBERIKAN REVERSE BIAS, DEPLESI CHANNEL AKAN BERTAMBAH, SEHINGGA TAHANAN DARI SOURCE KE DRAIN MENINGKAT
TIPE-P BERFUNGSI SEBAGAI GATE REVERSE BIAS PADA GATE DIPERBESAR SEHINGGA MEMPERBESAR AREA DEPLESI MEMPERKECIL JALUR PADA CHANNEL MEMPERBESAR TAHANAN CHANNEL DARI SOURCE MENUJU DRAIN
TIPE-P BERFUNGSI SEBAGAI GATE REVERSE BIAS PADA GATE DIPERBESAR SEHINGGA MEMPERBESAR AREA DEPLESI TERJADI PINCH-OFF(PINCH-OFF VOLTAGE),KARENA KECILNYA VOLTASE YANG DAPAT LEWAT DARI SOURCE MENUJU DRAIN
LEBIH SINGKAT BAHWA RESISTANSI PADA CHANNEL DAPAT DIKONTROL DENGAN DERAJAT/BESAR REVERSE BIAS YANG BERIKAN PADA GATE
GERAKAN ELEKTRON FET TIPE-N ARUS ELEKTRON MENGALIR DARI KUTUB NEGATIF SUMBER TEGANGAN, KE SOURCE,MENUJU DRAIN
BILA DIBERIKAN FORWARD BIAS BAGIAN CHANNEL DIBUAT DARI BAHAN TIPE-P GATE TERBUAT DARI BAHAN TIPE-N ARAH VOLTASE DIBALIK PADA CHANNEL TIPE-P
MERUPAKAN PERANGKAT POWER FAST SWITCHING DEVICE, KARENA MEMILIKI TAHANAN GATE DAN KAPASITANSI DARI GATE MENUJU SOURCE YANG LEMAH
HAMPIR SAMA DENGAN JFET TETAPI BAHAN P YANG DITAMBAHKAN MENGHASILKAN RESISTANSI YANG LEBIH KECIL BAHAN-BAHAN YANG DIGUNAKAN : SILIKON, GALIUM ARSENIDE, INDIUM PHOSPHIDE, SILIKON CARBIDE, DIAMOND ALLOTROPE DARI CARBON.
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CONTOH SOAL
diketahui: Rc = 3k Rb = 140k Vcc= 9V Vbb= 5V = 100 Buat grafik antara Ic-Vce dan Ib-Vbe Vbe = 0,7 V
Example
Let RC = 500 W RB = 90 kW VCC = +12 V
@ 25 C VCC VBE 12 V - 0.7 V IB 113A RB 100,000 W
@ 25 C b = 80 @ 75 C b = 120
@ 75 C IB is the same IC = 16.95 mA VCE = 2.51 V IC increases by 50% VCE decreases by 56%
I C b I B (100)(113 A) 11.3 mA
VCE VCC b I B R C 12 V - (100)(113 A)(560 W ) 5.67 V
Example
20 a) ib= 150 uA b) Ib= 200 uA c) Ib= 250 uA
Transistors as Amplifiers
BJT common emitter mode In Linear Active Region Significant current Gain