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Active Power:
P = .C.V.clk
Sub-threshold Leakage
Gate Leakage
Diode Leakage
Gate Leakage
Gate
Subthreshold
Leakage
Source Drain
Reverse Biased
Junction BTBT
Bulk
n+ n+
Confidential
Controlling Leakage
Sub-threshold leakage
Gate Leakage
Diode Leakage
Leakage proportional to
diffusion area
One can judiciously select high Vt transistors for the devices which
contribute more towards leakage like core cells and big drivers.