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Objectives Background Fabricated devices Signal Processing Current Goals
Objectives
Fabrication of a stable platform for transducing signals through artificial BLMs
Allow for the most stable BLM possible
BLMs
Bilayer Lipid Membranes
An Artist's conception of ion channels in a lipid bilayer membrane (taken from Hille, B., 1992. Ionic Channels of Excitable Membranes. Sinauer, Sunderland, Massachusetts.)
Composed of a hydrophilic polar head and hydrophobic non polar tail 5nm thickness with .5nm2 area / lipid molecule BLMs have high resistances and high capacitances
Component
Current Vs.Voltage
Impedance
resistor
E= IR
Z=R
inductor
E = L di/dt
Z = jwL
capacitor
I = C dE/dt
Z = 1/jwC
Zel
Fabrication Requirements
Hold a stable membrane
Smooth and clean surface
Preferably oxide surface
Porous surface
Allow for signals to be passed through membrane/proteins Pore size should be small to increase the stability of suspended region and prevent lipids from forming conformally to the surface
Fabrication Requirements
Measure signals with a high S/N ratio
Need a high resistance, low capacitance substrate
Prevents capacitive coupling, capacitive signal leakage High resistance allows for signals to be measured only through the membrane area
Si3N4
Si
Alumina film characteristics can be adjusted by use of phosphoric acid and anodization conditions
Si substrates have a much lower resistance and higher capacitance than quartz substrates
Sample
Quartz plus oxide Silicon, N-type 0.005-0.02 -cm Silicon plus oxide Silicon/Nitride/Alumina (no H2PO4 etching) Silicon/Nitride/Alumina (no H2PO4 etching) Silicon/Nitride/Alumina (H2PO4 etch 20 min) Silicon/Nitride/Alumina (H2PO4 etch 20 min)
AREA
0.1 Hz 88 mm2 88 mm2 88 mm2 88 mm2 12.6 mm2 88 mm2 12.6 mm2 46.25 G 1.51 M 559.6 M 25.21 M 18.91 M 1.63 M 3.26 M
Impedance
1 Hz 14.02 G 173 k 53.58 M 4.197 M 3.85 M 133 k 488.5 k 1.67 G 21.32 k 5.66 M 494 k 503 k 25.02 k 72.32 k 10 Hz
Proposed Structure
Change of Silicon substrate for SiO2 Difficulty in etching through the wafer
HF wet etch is isotropic Dry etching of SiO2 has a maximum rate of 100nm/minute which is 5000 minutes for a 500um wafer.
Proposed Structure
Cut 100um diameter holes in a quartz substrate with a micromachining laser
Quartz
Proposed Structure
Cut 100um diameter holes in a quartz substrate with a micromachining laser
Proposed Structure
Anodize the aluminum
Al(metal) Al2O3
Proposed Structure
Coat the surface with a polymer (polyimide or adhesive wax)
Proposed Structure
Adhere the Si and quartz surfaces (hot press)
Proposed Structure
Dry etch the Si wafer (Bosch etch process) at a rate of 1um/minute. Dry etch polymer (RIE)
Proposed Structure
BLM can then be deposited
Hirano from Nihon University used a patch clamp to measure current openings from a single gramicidin protein in response to different concentrations of ferritin avidin
Conclusion
We have developed a system to hold membranes at a high resistance over a patterned substrate Current readings are feasible and should generate readable results due to the larger number of measurement proteins