Monte Carlo Simulation in Statistical Design Kit

Monte Carlo simulation in statistical design kit

Overview
1. Monte Carlo Simulation 2. Practical demonstration in Cadence 3. Simulation and Measurement

Monte Carlo simulation in statistical design kit

Monte Carlo Simulation

... allows the random variation of - process parameters - mismatch parameters - process & mismatch parameters

Monte Carlo simulation in statistical design kit

Monte Carlo process simulation

Wafer production will always show some variation of technological parameters The MC process simulation is the adequate tool to give an early estimation how it will affect the circuits function.

Monte Carlo simulation in statistical design kit

Monte Carlo process simulation

... dw_rpyhl_skew rcs_rpyhl_skew rsh_rpyhl_skew a_wc_skew_nsic a_be0_skew_nsic r_nsu_skew_nsic r_nbl_skew_nsic r_ncx_skew_nsic r_nci_skew_nsic r_wb_skew_nsic r_jbei_skew_nsi c r_nbei_skew_nsi c ...

For each simulation run a new random set of process parameters is generated and is valid for all active and passive components in the circuit

Monte Carlo simulation in statistical design kit

Monte Carlo mismatch simulation

Even optimum layout cannot completely avoid mismatch between components. The MC mismatch analysis gives insight in the effect of these slight variations.

Monte Carlo simulation in statistical design kit

Monte Carlo mismatch simulation

For each device an individual mismatch random variable is generated and is valid only for a single run.

The mismatch property can be set globally or for selected devices only.

Monte Carlo simulation in statistical design kit

Monte Carlo process & mismatch simulation

In addition to the global random process parameter set each device gets an individual mismatch random variable. This combined simulation will give an estimation of a real wafer fabrication

Monte Carlo simulation in statistical design kit

Monte Carlo Tool Demonstration

Monte Carlo simulation in statistical design kit

Testbench

Monte Carlo simulation in statistical design kit

Operational Amplifier V1

Monte Carlo simulation in statistical design kit

Opamp V1 Mismatch and Process Variation

Monte Carlo simulation in statistical design kit

Sweep of Process Parameter Model Setup

Monte Carlo simulation in statistical design kit

Sweep of Process Parameter Model Setup

Monte Carlo simulation in statistical design kit

Variation of Process Parameter with Corner Tool

Monte Carlo simulation in statistical design kit

Variation of Process Parameter with Corner Tool

Monte Carlo simulation in statistical design kit

Sweep of Process Parameter

Monte Carlo simulation in statistical design kit

Opamp V1 Mismatch and Process Variation

Monte Carlo simulation in statistical design kit

Circuit optimisation

Step 1: Add base current compensation

Monte Carlo simulation in statistical design kit

Circuit optimisation

Step 1

Monte Carlo simulation in statistical design kit

Circuit optimisation

Step 2: Add buffer stage

Monte Carlo simulation in statistical design kit

Circuit optimisation

Step 2

Monte Carlo simulation in statistical design kit

Circuit optimisation

Step 3: Adjust bias current and add cascode stage

Monte Carlo simulation in statistical design kit

Circuit optimisation

Step 3

Monte Carlo simulation in statistical design kit

Improvement in DC-Offset

Monte Carlo simulation in statistical design kit

Overview
DC-Offset N = 1000 simulation runs

Simulation MM before optimisation after optimisation 3.82 1.16 Proc 22.77 0.09 MM&Proc 24.94mV 1.16mV

Monte Carlo simulation in statistical design kit

Identify critical components and process parameters

- Run sensitivity analysis
- MC Simulation with individual mismatch enable

- Perform correlation check after process simulation in Monte Carlo Tool

- sweep of single process parameters

Monte Carlo simulation in statistical design kit

Rules of thumb for Design

Wide spread at Mismatch Simulation: -> Increase area factor of critical components

Wide spread at Process Simulation: -> Check circuit topology e.g.: - add base current compensation - add cascode or buffer stage

Monte Carlo simulation in statistical design kit

Simulation and Measurement

Monte Carlo simulation in statistical design kit

Circuit Topology

Monte Carlo simulation in statistical design kit

First approach to DC-Offset compensation with dummy stage

Monte Carlo simulation in statistical design kit

Results from first Silicon

First silicon of a test circuit did show a wide spreading of DC offsets especially in high gain mode. The yield was unacceptable low :

DC offset voltages Specification: +/- 20mV First silicon : ~ 40mV (1-sigma)

Monte Carlo simulation in statistical design kit

Typical DC Offset Distribution (Wafer probing)

1-Sigma 38.7mV

Monte Carlo simulation in statistical design kit

Resimulation:

Mismatch & Process Variation

Monte Carlo simulation in statistical design kit

Redesign
Evaluation of the circuit without statistical models is possible - but takes a lot of time. Monte Carlo Analysis with new statistical design kit provides a fast insight in the circuits behaviour at mismatch and process variation. The conformity of measurement and simulation is rather good

Monte Carlo simulation in statistical design kit

Circuit improvements
- enlarge area factor at critical elements - add base current compensation - decrease current of differential amplifier to limit influence of beta variation - limit influence of early effect by cascode stages and dummy amps - revise the complete channel topology and gain chain (omit dummy OP stage)

Monte Carlo simulation in statistical design kit

Redesign without dummy stage but OP design improved

Monte Carlo simulation in statistical design kit

New Design:

Mismatch & Process Variation

Monte Carlo simulation in statistical design kit

Overview
DC Offset @ Opamp output (300 simulation runs)

Simulation MM First Design 13.6 New Design 6.3 Proc 32.9 0.8 MM&Proc 32.9mV 5.9mV

Measurement Wafer 38.7mV ?

Monte Carlo simulation in statistical design kit

More Information
[1] Kraus, W. : PCM- and Physics-Based Statistical BJT Modeling Using HICUM and TRADICA, 6th HICUM Workshop, 2006

[2]

Schrter, M., Wittkopf, H., Kraus, W. : Statistical modeling of high-frequency bipolar transistors, Proc. BCTM, pp 54 - 61, 2005