Professional Documents
Culture Documents
University of Calcutta
Organized by
Radio Physics and Electronics Association (1960)
CAS in Radio Physics and Electronics (1963)
S. K. Mitra Centre for Space weather (2004)
Centre fur TeleInFrastructur (CTIF) -India (2007)
UGC Networking Resource Centre in Physical Sciences (2008)
Centre for Research & Training in Microwave & Millimeterwave Technology (2008)
National MEMS Design Centre (2009)
Workshop on
Frontiers of Electronics and Communication
at
North Eastern Regional Institute of Science andTechnology
(NERIST),
Nirjuli, Arunachal Pradesh
August 08, 2007
NanoDev - 1
P. K. Basu
Institute of Radio Physics and Electronics
92 Acharya Prafulla Chandra Road
Kolkata 700 009
Current Voltage Relation
v
J
A
L
•Current density J = σ E
•To calculate conductivity of intrinsic Si at
room temperature
•Conductivity σ = e(niμn + piμp) ; μn = 1500 μn =
500;
n = 1.5 x 1010 ; conductivity = 4.8 x 10-6
mho/cm ⇒ very low and cannot be controlled.
3/ 2
1 2mc
• dN =S c ( E ) dE =
2π2 2
( E −E c )1 / 2 dE
L3 E(eV)
4 Γ15
X3
2
L1 Γ1 X1
Γ15
L3
-2
SO X5
k=π/a(111) k=(000) k=2π/a(100)
E E
Conduction
band
Eg ħω Eg
ħω
Valence
band
0 k 0 k
Si ky
3
hh
lh
1
3 1 1 3
kx
Heavy 1
∆
holes
(mLight
*
lh)(m
holes *
)
lh
Split-off 3
holes (m*lh)
(a) (b)
E k =E k 0 +
(k −k
x
2
0 x )2
+
(
k y −k 0 y 2 +(k z −k 0 z )2
.
)
2 ml mt
[
E (k ) = Ak 2 ± B 2 k 4 + C 2 (k x2 k y2 + k y2 k z2 + k z2 k x2 ] 1/ 2
Scattering Mechanisms
Bulk: Impurity, Phonons, Defects (Alloy Disorder)
QW: Remote Impurity Scattering in MD structures,
Surface Roughness
QWR: Reduced scattering rate for 1 DEG
QD: Phonon bottleneck
Hot Carrier Phenomena
P. K. Basu
Institute of Radio Physics and Electronics
92 Acharya Prafulla Chandra Road
Kolkata 700 009
p-n junction
METAL OXIDE SEMICONDUCTOR FIELD
EFFECT TRANISTORS
MOSFETs
Classification
•Enhancement mode : n channel , p channel
•Depletion mode: n channel, p channel
CMOS INVERTER
Isub = μ0 Cox (W/L)(m-1)(VT)2 exp[(VG –VT)/mkT] x [ 1 – exp(- Vds/kT)]
m = 1 + (Cdm/Cox)
Lower VT increases subthreshold leakage current. Vds has little effect on
subthreshold current.
Trends of power supply voltage of CMOS
MOSFET: The Leaky Switch
IEDM 2003
Leakage Power
(a) MOSFET (b) FIN FET (c ) Nano Wire FET (d) Vertical NWFET: complete
uniform wrap-around gate (e) Array of Vertical NWFETs as in (d).
C. Thelander, Materials Today, vol. 9, no. 10, p. 28 (2006)
High Electron Mobility Transistors (HEMTs)
Modulation doped
or GaAs
Or AlGaAs
The 2DEG in GaN is separated from impurity ions in AlGaN. Reduced Coulomb
scattering leads to mobility enhancement. The text-book examples deal with
AlGaAs/GaAs modulation doped single heterojunction.
Resonant Tunneling Diodes
QCA – The Four Dot Device