Semiconductor Device Physics--Sean L.

Rommel
Fundamentals and Operation of Semiconductor Devices
Module 5: Bipolar Junction Transistor Technology
The Origin of Gain in a BJT

Sean L. Rommel
Microelectronic Engineering
Rochester Institute of Technology


Semiconductor Device Physics--Sean L. Rommel
Performance Outcomes
Describe the physics underlying BJT operation
Relate the physical origin of gain in a BJT to the base transit time and minority
carrier lifetime
Draw the majority & minority charge in E, B, C for various modes of operation.
Explain the physical meaning underlying key benchmarks for BJT operation
Relate the current flowing through the emitter in a BJT to device dimensions, doping
and material parameters
Explain and evaluate BJTs using the Ebers Moll Model
Explain and evaluate BJTs using the hybrid-pi model
Explain the deviations from ideality including Base Width Narrowing, Kirk Effect,
and Emitter Crowding
Explain the physical interpretation of a Gummel Plot.
Bipolar Junction Transistors: Introduction
Semiconductor Device Physics--Sean L. Rommel
Emitter P+ Base N Collector P
Let us assume that we have an npn BJT under
equilibrium.
W

B

W
BC
W
EB

W
B

Bipolar Junction Transistors: Introduction
Semiconductor Device Physics--Sean L. Rommel
Emitter P+ Base N Collector P
W
B

B B B B P P P
W L D L D t t = = =
Bipolar Junction Transistors: Introduction
'
B B nBE nBC
W W x x =
Equation 3:
Semiconductor Device Physics--Sean L. Rommel
'
B B nBE nBC
W W x x =
( )
( )
0
2
r A
n bi a
D D A
N
x V V
q N N N
c c
| |
=
|
|
+
\ .
Equation 4a:
( )
( )
0
2
r D
p bi a
A D A
N
x V V
q N N N
c c
| |
=
|
|
+
\ .
Equation 4b:
We recall from Module 2, Lecture 2 that
'
B B pBE pBC
W W x x =
NPN
PNP
Bipolar Junction Transistors: Introduction
Semiconductor Device Physics--Sean L. Rommel
A key observation is that the Quasi-Neutral Base width is dependent
on the bias applied!
Let us now consider the PNP operating in the normal active mode of
operation.
Bipolar Junction Transistors: Introduction
Semiconductor Device Physics--Sean L. Rommel
Emitter P+ Base N Collector P
W
B

Ax
BC

We observe that W
B
is smaller in the
normal active mode than under
equilibrium.
Let us now consider carrier transport in
a BJT.
Bipolar Junction Transistors: Introduction
Semiconductor Device Physics--Sean L. Rommel
Is W
B
a fixed amount?
Does the B-C or B-E junction vary more under applied bias?
Just some food for thought!
Bipolar Junction Transistors: Introduction
Semiconductor Device Physics--Sean L. Rommel
Emitter P+ Base N Collector P
The barrier between Emitter and Base is lowered under
Normal Active Mode
Therefore, there will be a net flow of holes from E to B
and electrons from B to E.
holes (I
ep
)
electrons (I
en
)
Current Direction
Bipolar Junction Transistors: Introduction
Semiconductor Device Physics--Sean L. Rommel
Question: In a PNP BJT, will more holes flow from E to
B or will more electrons flow from B to E?
Answer: This depends on the doping!
The side of the junction with the larger barrier height
will have a smaller current flow.
If the emitter is doped more heavily than the
base, the depletion region will be widest in the
base.
This implies that the barrier for carriers to
flow from the base to emitter is larger than the
barrier for carriers to flow from the emitter to
base
Bipolar Junction Transistors: Introduction
Semiconductor Device Physics--Sean L. Rommel
We now define the emitter current in qualitative terms.
We now define the emitter injection efficiency ():
Bipolar Junction Transistors: Introduction
E Ep En
I I I = +
Equation 5:
PNP
NPN
Ep
Ep En
I
I I
=
+
Equation 6a:
En
Ep En
I
I I
=
+
Equation 6b:
Semiconductor Device Physics--Sean L. Rommel
We recognize that the emitter injection efficiency measures the
percentage of minority carriers ENTERING the base from the
emitter.
In an ideal BJT, the emitter injection efficiency should be equal to 1.
As we will soon see, this will enhance our gain of carrier flowing into
the base.
Bipolar Junction Transistors: Introduction
Semiconductor Device Physics--Sean L. Rommel
This only represents the first half of the problem!
The interesting part is what happens once carriers ENTER THE
BASE.
Bipolar Junction Transistors: Introduction
Semiconductor Device Physics--Sean L. Rommel
Emitter P+ Base N Collector P
For the moment, we will consider three components of
current in the BC Depletion Region:
We will assume that for the moment, no additional
charge is supplied to the base.
1. holes (I
Bp
)
2. holes(I
BpRG
)
Current Direction
3. electrons(I
BpnRG
)
Bipolar Junction Transistors: Introduction
Semiconductor Device Physics--Sean L. Rommel
The physical interpretation of these charges are as
follows:
1. I
Bp
: Diffusion of minority carriers through the quasineutral base
supplied by injection from the emitter.
IF THE BASE IS NARROW, ON AVERAGE EACH
MINORITY CARRIER WILL DIFFUSE TO THE B-C
Junction.
IF THE BASE IS WIDE, ON AVERAGE EACH
MINORITY CARRIER WILL RECOMBINE BEFORE
REACHING THE BC JUNCTION.
Bipolar Junction Transistors: Introduction
Semiconductor Device Physics--Sean L. Rommel
The physical interpretation of these charges are as
follows:
2. I
BpRG
: Holes injected into the base from the Collector R-G
generation current
3. I
BnRG
: Electrons injected into the base from the Collector R-G
generation current
Bipolar Junction Transistors: Introduction
Semiconductor Device Physics--Sean L. Rommel
Emitter P+ Base N Collector P
Suppose we inject a small current of electrons into the
base:
1. holes (I
Bp
)
2. holes(I
BpRG
)
Current Direction
3. electrons(I
BpnRG
)
e
l
e
c
t
r
o
n
s

Bipolar Junction Transistors: Introduction
Semiconductor Device Physics--Sean L. Rommel
The first key point in understanding BJTs is that extra electrons
injected in the base violate space charge neutrality!
The second key point in understanding BJTs is that the base is
narrow compared to the minority carrier diffusion length.
Bipolar Junction Transistors: Introduction
Semiconductor Device Physics--Sean L. Rommel
Base N
Lets look at what happens just in the base:
1. holes (I
Bp
)
2. holes(I
BpRG
)
Current Direction
3. electrons(I
BpnRG
)
e
l
e
c
t
r
o
n
s

e
-

VIOLATION
OF
SPACE
CHARGE
NEUTRALITY
Bipolar Junction Transistors: Introduction
Semiconductor Device Physics--Sean L. Rommel
Base N
1. holes (I
Bp
)
2. holes(I
BpRG
)
Current Direction
3. electrons(I
BpnRG
)
e
l
e
c
t
r
o
n
s

e
-

A hole enters the
base from the
emitter to
compensate
h
+

4. holes to
compensate (I
Bp
)
Bipolar Junction Transistors: Introduction
Semiconductor Device Physics--Sean L. Rommel
The average hole (minority carrier) traveling through the base
has a diffusion or recombination length equal to L
B
.
BUT the base is narrower than L
B
!
On average the hole will diffuse through the base and not
recombine!
Bipolar Junction Transistors: Introduction
Semiconductor Device Physics--Sean L. Rommel
Base N
Lets look at what happens just in the base:
1. holes (I
Bp
)
2. holes(I
BpRG
)
Current Direction
3. electrons(I
BpnRG
)
e
l
e
c
t
r
o
n
s

e
-

The hole diffuses
through the base
without
recombining
h
+

4. holes to
compensate (I
Bp
)
h
+

Bipolar Junction Transistors: Introduction
Semiconductor Device Physics--Sean L. Rommel
Thus, we see an increase in the current out of the collector.
So far, the extra electron in the base is not compensated, and thus
more carriers must be injected from the emitter in an attempt to
neutralize it.
On average, most of these carriers will also diffuse to the collector
The result is a VERY LARGE collector and emitter current and a
VERY SMALL base current.
Bipolar Junction Transistors: Introduction
Semiconductor Device Physics--Sean L. Rommel
Base N
1. holes (I
Bp
)
2. holes(I
BpRG
)
Current Direction
3. electrons(I
BpnRG
)
e
l
e
c
t
r
o
n
s

e
-

Holes that have
diffused through
the base to
neutralize the
extra electron.
h
+

4. holes to
compensate (I
Bp
)
h
+

h
+

h
+

h
+

h
+

Bipolar Junction Transistors: Introduction
Semiconductor Device Physics--Sean L. Rommel
We call the average time that it takes a minority carrier to move
through the quasi-neutral base the TRANSIT TIME.
2
2
B
t
B
W
D
t =
Equation 7:
We observe that if W
B
<<L
B
, the transit time must be less than the
minority carrier lifetime.
Bipolar Junction Transistors: Introduction
Semiconductor Device Physics--Sean L. Rommel
KEY POINT: On average, after one minority carrier lifetime, the
electron will be compensated.
2
1
B
B
B th t
L
D v N
t
o
= =
Equation 9:
The gain of carriers flowing from the emitter to the collector may
be approximated by a ratio of the minority carrier lifetime divided
by the transit time.
Bipolar Junction Transistors: Introduction
Semiconductor Device Physics--Sean L. Rommel
First order approximation of gain:
2
2
2
2
2
B
B B B
B t B
B
L
L D
W W
D
t
|
t
| |
= = =
|
\ .
Equation 9a:
If this were a ratio of 6, this would mean that 6 holes diffuse
through the base for each hole that recombines.
Bipolar Junction Transistors: Introduction
Semiconductor Device Physics--Sean L. Rommel
Base N
1. holes (I
Bp
)
2. holes(I
BpRG
)
Current Direction
3. electrons(I
BpnRG
)
e
l
e
c
t
r
o
n
s

e
-
h
+

4. holes to
compensate (I
Bp
)
h
+

h
+

h
+

h
+

h
+

h
+

Bipolar Junction Transistors: Introduction
Semiconductor Device Physics--Sean L. Rommel
Base Transport Factor (o
T
)
Ideally, all minority carriers entering the base should arrive at the
collector (o
T
=1).
Ratio of hole current diffusing into the collector to the hole current
diffusing into the base from the emitter (PNP):
CP
T
EP
I
I
o = Equation 10:
PNP NPN
CN
T
EN
I
I
o =
Realistically, the base transport factor will be slightly less than 1.
Bipolar Junction Transistors: Introduction
Semiconductor Device Physics--Sean L. Rommel
DC Alpha (o
DC
)
C CP CN
DC
E EP EN
I I I
I I I
o
+
= =
+
Equation 11:
We now recognize that this number will depend on biasing conditions!
Ratio of collector to emitter current
Let us manipulate this under normal active mode conditions:
Bipolar Junction Transistors: Introduction
Semiconductor Device Physics--Sean L. Rommel
DC Alpha (o
DC
) for NORMAL ACTIVE MODE
In a PNP, if the E-B is forward biased, and C-B is reverse biased,
I
Cp
>> I
Cn
.

CP
DC
EP EN
I
I I
o ~
+
Equation 11a: PNP, Normal Active
Mode
NPN, Normal
Active Mode
CN
DC
EP EN
I
I I
o ~
+
Equation 11b:
In a NPN, if the E-B is forward biased, and C-B is reverse biased,
I
Cn
>> I
Cp
.

Bipolar Junction Transistors: Introduction
Semiconductor Device Physics--Sean L. Rommel
DC Alpha (o
DC
) for NORMAL ACTIVE MODE
Focusing on the PNP,

1 1
1 / 1 /
CP EP
DC T T
EP EN EP EN EP EP EN
I I
I I I I I I I
o o o ~ = =
+ + +
PNP, Normal Active
Mode
Thus, we arrive at the important result that

DC T
o o ~ Equation 11c:
Bipolar Junction Transistors: Introduction
Semiconductor Device Physics--Sean L. Rommel
DC Beta (|
DC
)
After algebraic manipulation, we see that
Bipolar Junction Transistors: Introduction
C C
DC
B E C
I I
I I I
| = =

Equation 9b:
( ) ( ) ( )
/
1 / 1 / 1 1
C C E DC T
DC
E C E C E DC T
I I I
I I I I I
o o
|
o o
= = = =

Equation 9c:
Semiconductor Device Physics--Sean L. Rommel
We often refer to |
DC
as the Common Emitter Gain.

We often refer to o
DC
as the Common Base Gain.
Bipolar Junction Transistors: Introduction
Semiconductor Device Physics--Sean L. Rommel
Review Questions




Bipolar Junction Transistors: Introduction
1.) What are the key assumptions in the design of an ideal BJT?
2.) What is the physical origin of gain in a BJT?
3.) What is the definition of the QUASINEUTRAL BASE?
4.) What are the definition of the emitter injection efficiency, base
transport factor, common base gain, and common emitter gain?
5.) How is the gain in a BJT related to the number of defects in the
base?
6.) What will happen if the quasi-neutral base width is much longer
than the minority carrier diffusion length?