Dr.

Nasim Zafar
Electronics 1
EEE 231 BS Electrical Engineering
Fall Semester 2012
COMSATS Institute of Information Technology
Virtual campus
Islamabad
The Diode Circuits-II
Lecture No: 10
Contents:
Ideal & Practical Diodes.
Terminal Characteristics of Junction Diodes.
DC Load Line and Quiescent Conditions.
Piecewise Linear Model
Small Signal Analysis of Diodes
Dynamic Resistance, AC Resistance
Capacitance and Switching Response,

3
References:

Microelectronic Circuits:
Adel S. Sedra and Kenneth C. Smith.

Electronic Devices and Circuit Theory:
Robert Boylestad & Louis Nashelsky ( Prentice Hall ).

Introductory Electronic Devices and Circuits:
Robert T. Paynter.

Electronic Devices :
Thomas L. Floyd ( Prentice Hall ).
References (Figures):
Chapter 2 Diodes:

Figures are redrawn (with some modifications) from

Introductory Electronic Devices and Circuits
By
Robert T. Paynter
The Diode Models

1. The Ideal Diode Model
6
The Diode:

p n
Anode Cathode

P-N Junction Diode Schematic Symbol:
The left hand diagram shows the reverse biased junction.
No current flows flows.
The other diagram shows forward biased junction.
A current flows.
Diode Circuits:
anode
cathode
Forward bias
Reversed bias
-
-
+
+
8
Forward-Biased Diode Circuit:
I
F
R
+V
R
V
I
F
I
F
> 0A
R
V
I
F
I
F
> 0A
I
F
R
-V
9
Reverse-Biased Diode Circuit:
R
+V
R
V
I
T
0A
R
V
I
T
0A
R
-V
10
Effect of V
F:

R
1
V
S
5 V
1 kO
D
1
I
4.3 V
1
1 1
1
1
0.7V
5V 0.7V 4.3V
4.3V
4.3mA
1k
D
R S D
R
V
V V V
V
I
R
=
= = =
= = =
Value Ideal Practical
V
F
0 V 0.7 V
V
R1
5 V 4.3 V
I 5 mA 4.3 mA
11
Example-1
R
1
V
S
6 V
10 kO
D
1
I
V
1 1
1
1
6V 0.7V
5.3V
5.3V
530A
10k
R S D
R
V V V
V
I
R
= =
=
= = =
12
Example-2
R
1
V
S
5 V
1.2 kO
D
1
I
R
2
2.2 kO
1
1 2
5V 0.7V
1.2k 2.2k
1.26mA
S D
V V
I
R R

=
+

=
+
=
13
Example-3
R
1
V
S
4 V
5.1 kO
D
1
I
D
2
1 2
1
4V 0.7V 0.7V
5.1k
509.8A
S D D
V V V
I
R

=

=
=
14
Percentage Error:
- '
% of error 100
X X
X
=
where X = the measured value
X = the calculated value
15
Example-4
1 2
1 2
1 2
10V
3.03mA
1.5k 1.8k
10V 0.7V 0.7V
1.5k 1.8k
2.61mA
2.61mA 3.03mA
% of error = 100 16.1%
2.61mA
S
ideal
S D D
prac
V
I
R R
V V V
I
R R
= = =
+ +

= =
+ +
=

=
R
1
V
S
10 V
1.5 kO
D
1
I
D
2
R
2
1.8 kO
Power Dissipation P
D(max)

16
17
I
0
and P
D(max)
Relationship:
(max)
0
D
F
P
I
V
=
where I
0
= the limit on the average forward current
P
D(max)
= the forward power dissipation rating of the diode
V
F
= the diode forward voltage (0.7V for Si)
18
Forward Power Dissipation P
D(max)
:
V
S
10 V
D
1
I
R
L
100 O
Choose a diode with forward power
dissipation P
D(max)
at least 20% greater
than actual power dissipation.
( )( )
( )( )
1
1
(max)
10V 0.7V
93mA
100
0.7V 93mA 65.1mW
1.2 1.2 65.1mW 78.12mW (minimum)
S D
L
D D
D D
V V
I
R
P V I
P P

= = =
= = =
= = =
19
Example 5.
A diode has a forward power dissipation rating of 500
mW. What is the maximum allowable value of forward
current for the device?
( )( )
(max)
0
(max) 0
500mW
714.29mA
0.7V
0.8 0.8 714.29mA 571.43mA
D
F
P
I
V
I I
= = =
= = =
20
Complete: Model Diode Curve (Ref 3).
Reverse operating
region (also called
the reverse
breakdown
region)
Forward
operating
region
0.2 0.4 0.6 0.8
20
40
60
80
100
20 40 60 80
1.0
2.0
3.0
I
R
(A)
I
F
(mA)
V
F
(V) V
R
(V)
I
F
0.7 V
R
B
Accurate model
Complete model
I
R
V
Z
R
Z
I = 0
F
B
F
V
R
I
A
=
A
R
Z
R
V
R
I
A
=
A
21
Another Example:
Determine voltage across diode in Fig. 2.19 (Ref. 3)
for the values of I
F
= 1 mA and I
F
= 5 mA. Assume
that the value for R
B
= 5 O.
I
F
= 1 mA:
I
F
= 5 mA:
( )( )
0.7V 0.7V 1mA 5 0.705V
D B
V IR = + = + =
( )( )
0.7V 0.7V 5mA 5 0.725V
D B
V IR = + = + =
Bulk resistance has a significant effect on voltage drop
across diode terminals when the forward current is large.
The Diode Models

4. Piecewise-Linear Diode Model
5. Constant-Voltage Diode Model
6. Dynamic Resistance, AC Resistance


Piecewise Linear Diode Model:
More accurate than the ideal diode model and does not rely on nonlinear
equation or graphical techniques.
Diode I-V characteristic approximated
by straight line segments.

We model each section of the diode
I-V characteristic with R in series with
a fixed voltage source.

Constant-Voltage Diode Model:
If V
D
< V
D,on
: The diode operates as an open circuit.


If V
D
> V
D,on
: The diode operates as a constant voltage
source with value V
D,on
.
Example: Diode dc Bias Calculations
This example shows the simplicity provided by a constant-
voltage model over an exponential model.

Using an exponential model, iteration is needed to solve for
current. Using a constant-voltage model, only linear equations
need to be solved.
S
X
T X D X X
I
I
V R I V R I V ln
1 1
+ ~ + =
V 1 for mA 2 . 0
V 3 for mA 2 . 2
= =
= =
X X
X X
V I
V I
Small-Signal Analysis of Diodes:
Small-signal analysis is performed at a DC bias point by
perturbing the voltage by a small amount and observing the
resulting linear current perturbation.

If two points on the I-V curve are very close, the curve in-
between these points is well approximated by a straight line:
T
D
V V
T
s
V V
D
D
D
D
V
I
e
V
I
dV
dI
V
I
T D
D D
1
/
1
1
~ =
~
A
A
=
+ + + + =
! 3 ! 2
1
3 2
x x
x e
x
Small-Signal Analysis of Diodes:
Since there is a linear relationship between the small-signal
current and small-signal voltage of a diode, the diode can be
viewed as a linear resistor when only small changes in voltage
are of interest.

D
T
d
I
V
r =
Small-Signal Resistance
(or Dynamic Resistance)
28
Small-Signal Analysis of Diodes:
Small-signal analysis is performed around a bias point by
perturbing the voltage by a small amount and observing
the resulting linear current perturbation.
1 D
T
D
I
V
V
I
A
= A
29
Small-Signal Analysis of Diodes:
If two points on the IV curve of a diode are close enough, the
trajectory connecting the first to the second point is like a line, with the
slope being the proportionality factor between change in voltage and
change in current.
T
D
T
D
T
s
VD VD
D
D
D
D
V
I
V
I
V
I
dV
dI
V
I
1
1
1
exp
|
=
=
=
A
A
=
30
Small Sinusoidal Analysis:
If a sinusoidal voltage with small amplitude is applied, the
resulting current is also a small sinusoid around a value.
t V
I
V
V
V
I t I I t I
p
T
T
s p D
e e cos exp cos ) (
0
0
0
+ = + =
t V V t V
p
e cos ) (
0
+ =
Resistance Levels:
The operating point of a diode moves from one region to
another the resistance of the diode will also change due to
the nonlinear shape of the characteristic curve

The type of applied voltage or signal will define the
resistance level of interest

Three different types of applied voltage
DC or Static Resistance
AC or Dynamic Resistance
Average AC Resistance
DC or Static Resistance
The application of a dc voltage to a
circuit containing a semiconductor
diode will result in an operating point
on the characteristic curve that will not
change with time

The resistance of the diode at the
operating point can be found simply
by finding the corresponding levels of
V
D
and I
D


The lower current through a diode the
higher the dc resistance level
AC or Dynamic Resistance
The varying input will
move the instantaneous
operating point up and
down a region of the
characteristics and thus
defines a specific change
in current and voltage as
shown in the Fig.
Temperature Effects:
) (
) 1 exp(
n
po n
p
no p
s
s
L
n eD
L
p eD
J
kT
eVa
J J
+ =
=
a
i
po
d
i
no
N
n
n
N
n
p state steady
2 2
, : = =
Js : strong function of temperature
) exp(
2
kT
E
n J
g
i s

35
Temperature Effects on Diode Operation:
0.2 0.4 0.6 0.8
I
F
(mA)
2
4
6
8
10
100 C 25 C
1.0
I
2
I
1
V
1
V
2
V
F
(V) V
R
I
R
5
10
15
20
I
R
= 5 A
I
R
= 10 A
I
R
= 20 A
T = 25C
T = 35C
T = 45C
Typical Diodes
37
Diode Maximum Ratings.
Rating Discussion
Peak repetitve reverse voltage, V
RRM
Maximum allowable reverse voltage.
Nonrepetitive peak reverse voltage,
V
RSM
Maximum allowable value of a single
event reverse voltage. (V
RSM
> V
RRM
)
RMS reverse voltage, V
R(rms)
V
R(rms)
= 0.707 V
RRM
Average rectified forward current, I
0
Maximum average diode current.
Nonrepetitive peak surge current, I
FSM
Maximum allowable value of forward
current surge. (30A for 1N400X)
Operating and storage junction
temperature, T
J
or T
stg
Temperature that diode can withstand.
38
Diode Capacitance:
n p
V
R
Insulator
Conductor Conductor
Insulator
Semiconductor Devices
Application of PN Junction:
P
N

J
U
N
C
T
I
O
N
PN Junction diode
Junction diode
Rectifiers
Switching diode
Breakdown diode
Varactor diode
Tunnel diode
Photo-diode
Light Emitting diode & Laser Diode
BJT (Bipolar Junction Transistor)
Solar cell
Photodetector
HBT (Heterojunction Bipolar Transistor)
FET (Field Effect Transistor)
JFET
MOSFET - memory
MESFET - HEMT
40
Summary:
Three diode models.
Diode specifications.
Diode Applications.