Guided by: Ms.

Prima Philip

Presented by:
Sanjna Salim
SILICON CARBIDE AC-DC
CONVERTER DESIGN FOR HIGH
TEMPERATURE APPLICATIONS

CONTENT
Identification of problems
Scope & relevance
Comparison with conventional
Proposed system
Testing
Results
Applications & limitations
Conclusion
Future Scope
References




IDENTIFICATION OF PROBLEMS
High power applications
high operating temperature
Reduce switching losses
Heat sink-reduced size

Harsh environments
High temperature packing, gate drives , control
electronics required.


KEYWORDS
Si C
JFET

SOI
technology
Harsh
environment
SCOPE AND RELEVANCE
SiC high power devices
High operating temperature(above 600 c)
Superior breakdown voltage
Lesser switching loss
Can handle higher current densities
Reduced packaging size

Critical component of microgrid

COMPARISON WITH
CONVENTIONAL
SILICON DEVICES






SILICON CARBIDE
DEVICES
Limited
temperature,
frequency and
power
management
Higher switching
losses





Higher electric
field strength
Thermal
conductivity
Decreased loss
Increased junction
temperature
Higher efficiency

PROPOSED SYSTEM
BLOCK DIAGRAM
Power
module
Voltage
sensor
PWM
controller
Pulse
generator
Voltage
regulator
Temp
sensor
Protection
Gate
drive
AC
DC

Power module:7 SiC diodes and normally on SiC
JFET
Rectifier stage-6 diodes
Boost stage - One diode and JFET


Output regulated at 270 V
Power rating 1.4 KW

STRUCTURE AND
COMPONENT DETAILS
Packaging
Wire Bonding Planar
Wire bonding Planar
Bonding wires are used
Mainly industrial
applications


Reduced size
Reduction in gate loop
and main loop
inductance
Planar structure packaging
Die attachment

Packaging-Purpose to provide electrical and
structural connections
Transient liquid phase bonding
Nanoscale silver paste
SiC diodes placed on DBC substrates
Heated to 300 C
Cooled down and top terminals bonded

SiC JFET 1200V,5A 3mm3mm

SiC Diode
1200V,5A
2.7mm2.7mm

Substrate
AlN DBC
Adhesive Epoxy
Duralco 132
Spacer Kapton tape
Insulation layer Epo-tek 600
Fabricated power module
Other high temperature components

DC link capacitor , voltage and temperature
sensor
SOI technology - reduced internal heating
Cissoid & Honeywell are 2 major suppliers
Thick film resistors selected
Capacitors can be use at more than 200 C
3 types of capacitors: Ceramic, mica and
tantalum



DETAILED SYSTEM DESIGN
RECTIFIER STRUCTURE &
FUNCTIONS

Three phase PWM rectifier

High temperature motherboard

DC link capacitors-filter high frequency current

Voltage and temperature sensor circuit-
Activate protection circuit

GATE DRIVE DESIGN
Edge triggered gate drive circuit
Wide duty cycle
fast speed turn on and off
smaller core


Turn on
Turn off
Positive pulse
S1 on
Shorts cg
Turns on JFET
Negative
pulse
Cg charged to
ve V through
D2
V<threshold
Turns off
JFET

SENSOR AND PROTECTION
DESIGN
3 OP AMP instrumentation amplifier-
voltage sensor
Low slew rate
Thermocouple-temperature sensor

Protection circuit

Protection activated-JFET turned off

Temperature prediction and better
thermal management
CONTROLLER DESIGN
High temperature analog PWM controller

soft start
SYSTEM PROTOTYPE
TESTING
Components thermal test - Thermal cycling test
300 thermal cycles
DC link capacitors , control capacitors ,PCB board,
solder
-50 C to 200 C
Capacitors divided to 2 groups and tested
solder shape - small

To improve reliability-through hole leads utilized

Core loss tested

Measurement done at different exciting frequencies




System harsh environment test
RESULTS

Converter efficiency -96.5%
For output voltage of 270 V voltage sensor
conversion ratio 100
Gate resistor and voltage regulator are the
hottest points
Nano silver paste reliable thermal die
attachment material
Reliable operation at 250 C


APPLICATIONS
NASA Space exploration
probes and landers
lightweight satellite& spacecraft converter system
Hybrid electric vehicles

Deep earth petroleum exploration

Power grids and microgrids

Transportation and marine applications
LIMITATIONS
High cost

Large volume

Development of auxilliary components high
temperature passive components and control
electronics required
CONCLUSION

SiC diodes and JFET main circuit devices

better properties than Si devices

All system functions integrated to one system

Based on silicon on insulator chips

Highly feasible for high temperature applications

Critical and valuable

Space exploration applications


FUTURE WORKS

Performance at higher temperatures

Thermal reliability studies related to layered
interconnection

High temperature EMI filters

Reduce cost
REFERENCES
"Characterization of Lead-Free Solder and Sintered
Nano-Silver Die-Attach Layers Using Thermal
Impedance," Components, Packaging and
Manufacturing Technology, IEEE Transactions on, vol.
1, pp. 495-501, 2011.
"A resonant gate-drive circuit with optically-isolated
control signal and power supply for fast-switching and
high-voltage power semiconductor devices," in Power
Electronics Conference (IPEC), 2010 International,
2010, pp. 1895-1901.
"High-Temperature Silicon Carbide (SiC) Power
Switches in Multichip Power Module (MCPM)
Applications," presented at the IEEE Industry
Application Society Meeting, 2005.


"High temperature (>200C) isolated gate drive topologies
for Silicon Carbide (SiC) JFET," Industrial Electronics,
2008. IECON 2008. 34th Annual Conference of IEEE,
2008, pp. 2867-2872.

"High-temperature, high-density packaging of a 60kW
converter for >200&deg;C embedded operation," Applied
Power Electronics Conference and Exposition, 2006.
APEC '06. Twenty-First Annual IEEE, 2006, p. 7 pp.