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Sovan Ghosh
Department of Electrical Engineering, IIT Madras
Voltage Reference
Analog circuits incorporate the voltage and current
references extensively . Such references are dc quantity that
exhibit A minimum dependence on the supply and process
parameters.
It has a well defined dependence on the temperature
(PTAT, constant Gm, or Temperature Independent)
We will analyze the operation of a temperature independent
voltage reference.
BANDGAP REFERENCE
One representative reference satisfying these key
parameters is the bandgap voltage reference.
The bandgap output voltage is realized by adding
a voltage that is complementary-to-absolutetemperature (CTAT) to another voltage which is
proportional-to-absolute-temperature (PTAT) to
yield a first-order temperature-compensated
voltage.
Several solutions to improve the temperature behavior exist. But They require
precision matching of current mirrors or a pre-regulated supply voltage and
Sometime special process also.
Drawbacks
Transistors Q1 and Q2 are fabricated in low voltage twin well
process. Figure below shows a Low voltage twin-well CMOS
process.
Circuit Diagram
Amplifier/Op-Amp Architecture
Operational Details
Performance Result
Comparative Analysis
Circuit Diagram
Analysis
Vout1 = Ic*Rout1
=(Iptat1+Ictat1)*Rout1
=1*(Veb1-Veb2)+1*Veb1
+*(ib1*R_COMPENSATE)
The first term describe a PTAT voltage.
The Second term of the equation
describes a negative temperature
coefficient voltage along with a small
nonlinear dependency on temperature.
Now third term shows the following
characteristics with temperature.
As third term decreases slowly at higher
temperature so it can be used to
compensate higher reduction rate of 2nd
term (VEB) at high temperature.
Amplifier Circuit
Amplifier/Op-Amp Circuit
Analysis
Both the nMOS and pMOS input pair of the amplifier is biased at sub
threshold region of operation. The biasing circuit ensured that tail current of
nMOS input pair Intail = Ibias - Iptail irrespective of supply and common mode
voltage. So Iptail + Intail is also constant. Now the DC gain of the amplifier is
given by Gm*R where Gm is input effective trans conductance of the
amplifiers input pairs and R is the impedance seen by looking into the
circuit from node PBIAS. Now R can be approximately written 1/(*IMp7)
where is a process dependent constant and IMp7 is the source to drain
current of Mp7 . As Intail + Iptail is constant and Inbias is constant so the biasing
current of the output transistor IMp7 is also constant; i.e. R is constant. Now
the Gm is given by gmn+gmp where gmn is nMOS input pairs trans
conductance and gmp is pMOS input pairs trans conductance. Now
gmp=(iptail/2)/Vt and gmn= (intail/2)/Vt. Where iptail and intail are biasing current as
shown in fig. 5 and Vt is thermal voltage. So Gm = gmn+gmp = ibias/(2*Vt)
which is independent of supply and common mode voltage.
Amplifier's DC Gain in dB
83
82
81
80
79
78
77
76
75
74
73
72
71
70
69
68
67
0.4
0.6
0.8
1.0
1.2
1.4
Performance Of the BG
0.71680
A- For 180 nm
B- For 220 nm
0.71675
0.71670
0.71665
0.71660
B
0.71655
0.71650
0.71645
0.71640
-60
-40
-20
20
40
60
80
100
120
140
Temperature ( C)
Continued.
D-Supply Voltage
C-Bandgap output for 180 nm
B-Bandgap Output for 220 nm
3.25
3.00
2.75
2.50
2.25
Amplitude(V)
2.00
1.75
1.50
0.7169
0.7168
0.7167
0.7166
0.7165
0.7164
0.000
0.005
0.010
0.015
0.020
Time (s)
Continued.
-10
For 220 nm
For 180 nm
-20
-30
PSRR (dB)
-40
-50
-60
-70
-80
-90
10
10
10
10
10
10
10
10
10
10
Frequency (Hz)
Comparative Analysis
Parameters
[12]
[9]
[10]
[11]
This work
1.2
2.5
1.5 / 3
25
40
23
38
11.2
.487
1.14
.617
.716
3.68
8.9
5.3
2.7
-40C to
150C
-40C to
110C
Line Regulation (%
/V)
.24
0C
to
100C
.286
3.9
to
13.7
-50C to
150C
CMOS
Technology (m)
0.35
0.5
0.6
Supply
Voltage (V)
Supply Current (A)
Ref.
Voltage (V)
Temp.
Coefficient
(ppm/C)
Temperature
Range
.039
-55C
to
125C
.028
0.35
0.22 / 0.18
References
Question
Answer