Low-Noise Amplifier

RF Receiver
Antenna
BPF1

LNA

BPF2

Mixer BPF3 IF Amp

Demodulator
RF front end

LO

Low-Noise Amplifier
First gain stage in receiver
Amplify weak signal

Significant impact on noise performance

Dominate input-referred noise of front end
NFsubsequent 1
NF frontend NFLNA
GLNA

Impedance matching
Efficient power transfer
Better noise performance
Stable circuit
3

LNA Design Consideration

Noise performance
Power transfer
Impedance matching
Power consumption
Bandwidth
Stability
Linearity

Noise Figure
Definition
SNRin
Sin N in
NF

SNRout S out N out

As a function of device
N device G N source
NF
G N source

G: Power gain of the device

NF of Cascaded Stages
Sin/Nin

Sout/Nout
G 1 , N1 ,
NF1

G i, N i,
NFi

GK, NK,
NFK

NF2 1 NF3 1
NFK 1
NF 1 NF1 1

...
G1
G1G2
G1G2 ...GK 1
Overall NF dominated by NF1
[1] F. Friis, Noise Figure of Radio Receivers, Proc.
IRE, Vol. 32, pp.419-422, July 1944.
6

Simple Model of Noise in MOSFET

k
Flicker noise V ( f ) WLC f
ox
Dominant at low frequency
2
g

Vg
Id

Vi

Thermal noise I d2 ( f ) 4kT g m

: empirical constant
2/3 for long channel
much larger for short channel
PMOS has less thermal noise

Input-inferred noise
Vi 2 ( f ) 4kT

g m WLCox f
7

Noise Approximation
Noise spectral
density

1/f noise
Thermal noise
dominant
Thermal noise

Band of interest

Frequency
8

Power Transfer and Impedance Matching

Rs
Vs

Power delivered to load

2

jXs

jXL
V

RL

Vs
Pdel
RL
Rs jX s RL jX L

Maxim available power

Pmax

VsVs*
PL R R , X X 0
s
L
s
L
4 Rs

Impedance matching
Load and source impedances conjugate pair
Real part matched to 50 ohm
9

Available Power

Equal power on load

and source resistors

10

Reflection Coefficient
Rs
Vs

jXs

V IZ L

jXL
V

RL

I I * ( Z L Z L* )
Pdel
2
Pmax

VsVs* (V IZ s )(V IZ s )*

aa*
4 Rs
4 Rs

(V IZ s* )(V * I *Z s )
Pref Pmax Pdel
bb*
4 Rs

V IZ s
a
2 Rs
V IZ s*
b
2 Rs
b Z L Z s*

a ZL Zs
11

Reflection Coefficient

No reflection
Maximum power transfer

12

S-Parameters
Parameters for two-port system analysis
Suitable for distributive elements
Inputs and outputs expressed in powers
Transmission coefficients
Reflection coefficients

13

S-Parameters
a1

b2

S21
S11

S22
S12

b1

b1 S11a1 S12 a2

a2

b2 S 21a1 S 22 a2
14

S-Parameters
b1
S11
a1 a 20

S11 input reflection coefficient with

the output matched

b2
S21
a1 a 20

S21 forward transmission gain or

loss

b1
S12
a2 a10

S12 reverse transmission or

isolation

b2
S22
a2 a10

S22 output reflection coefficient with

the input matched
15

S-Parameters
I1

Z1
Vs1

V1

I2
V2

Z2
Vs2

V1 I1Z1*
S11
V1 I1Z1 V

V2 I 2 Z 2* Re( Z1 )
S21
V1 I1Z1 Re( Z 2 ) V

V1 I1Z1* Re( Z 2 )
S12
V2 I 2 Z 2 Re( Z1 ) V

V2 I 2 Z 2*
S22
V2 I 2 Z 2 V

s 2 0

s 2 0

s 1 0

s 1 0

16

Stability Condition
Necessary condition
1 | S22 |2 | S11 |2 | S |2
K
1
2 | S12 S21 |

where
Stable iff

S S11S22 S12 S21

| S |2 L L 1

where

| S11 |2 | S 22 |2
L | S12 S 21 |
2

17

A First LNA Example

Rs

io

No flicker noise
ro = infinity
Cgd = 0
Reasonable for appropriate
bandwidth

Vs

Rs 4kTRs
Vs

Assume

Vgs

gmVgs

Effective transconductance
io g m Z in
Gmeff
Vs Rs Zin
4kTg
m

18

Power Gain
Voltage input
Current output
ii
g m Z in
2
G
| Gmeff |
*
VsVs
Rs Z in
*
o o

g m 1 ( jC gs )

gm

Rs 1 ( jC gs )
1 jRs C gs
T 1
g

2
2
1 ( Rs C gs )
Rs
2
m

19

Noise Figure Calculation

Power ratio @ output
Device noise + input-induced noise
Input-induced noise
N device G N in
NF
1
G N in

4kT g m
g m2
4kTRs
1 2 ( RsC gs ) 2

1
(1 2 Rs2C gs2 )
Rs g m

2
1
Rs g m
Rs g m
( g m / C gs ) 2

gm
T
C gs

20

Unity Current Gain Frequency

iin

iout
Ai
iin
iout T
Ai
1
TT
iin T

Device

iout

Ai

fT
0dB

frequency

21

Small-Signal Model of MOSFET

i2
i1
V1

i1

Rg
Cgs
V1

Cgs
Cgd

V2

i2

Cgd
Vgs
ri rds

Cdb
V2

rds
Cdb
Rg: Gate resistance
ri: Channel charging
resistance

gmVgs
22

T Calculation
i1

Rg
Cgs
V1

i2

Cgd
Vgs
ri rds

Cdb

i1

Rg
Cgs

gmVgs

V1

Cgd

i2

Vgs
ri

gmVgs

s (Cgs C gd ) s 2 riCgsCgd
I1
Y11

V1 V 0 1 s (Cgs Cgd ) Rg sriCgs s 2 Rg riCgsCgd

2

g m (1 sriC gs ) sC gd s 2 riC gsC gd

I2
Y21

V1 V 0 1 s (C gs C gd ) Rg sriC gs s 2 Rg riC gsC gd

2

23

T of NMOS and PMOS

Set:

Y11 ( j T )
Y21 ( j T )

0.25um CMOS Process*

1

Solve for T
gm
T
gm
Cgs C gd

[2] Tajinder Manku, Microwave CMOS - Device Physics and Design,

IEEE J. Solid-State Circuits, vol. 34, pp. 277 - 285, March 1999.
24

Noise Performance

2
NF 1
Rs g m 2
Rs g m
T

Low frequency
Rsgm >> ~ 1
gm >> 1/50 @ Rs = 50 ohm
Power consuming

CMOS technology
gm/ID lower than other tech
T lower than other tech
25

Review of First Example

No impedance matching
Capacitive input impedance
Output not matched

Power transfer
S11=(1-sRCgs)/(1+sRCgs)
S21=2Rgm/(1+sRCgs), R=Rs=RL

Power consumption
High power for NF
High power for S21
26

Impedance Matching for LNA

Resistive termination
Series-shunt feedback
Common-gate connection
Inductor degeneration

27

Resistive Termination
io

Rs
Vs

RI

4kTgm

4kT/Rs 4kT/RI
Is

Rs

RI

Vgs

gmVgs

Current-current power gain

gm
G
1 / Rs 1 / RI j Cgs

Noise figure
2

Rs Rs 1
1
2

NF 1
g m Rs 2
RI
g m Rs RI
T
28

Comparison with Previous Example

Previous example

2
NF 1
Rs g m 2
Rs g m
T

Resistive-termination
2

Rs

Rs
2
1 g m Rs 2
NF 1
RI g m Rs
RI
T
Introduced by input
resistance

Signal attenuated
29

Summary - Resistive Termination

Noise performance
Low-frequency approximation
Input matched Rs = RI = R

4
NF 2
gm R

Broadband input match

Attenuate signal
Introduce noise due to RI
NF > 3 dB (best case)
30

Series-Shunt Feedback
RF
Rs
Vs

RL

( RF RL )(1 g m Ra sRaC gs )
Rin
1 g m ( RL Ra ) s ( Ra RF RL )C gs

Ra

Rs
Cgs
Vs

Broadband matching

Rout
iout

RF
Vgs

gmVgs

RL

(1 g m Ra )( RF Rs )
1 ( g m sC gs )( Rs Ra )

sC gs ( Ra RF Rs RF Ra Rs )
1 ( g m sC gs )( Rs Ra )

Could be noisy

Ra
31

Common-Gate Structure
Rs

RL

Rs 4kTRs

Vgs gmVgs

Vs

Geff

I out

Vs

gm

1 g m Rs sRs C gs

Rs 4kTRs
Vs

4kTgm
RL

Vgs

RL
gm
gmVgs

4kTgm
32

Input Impedance of CG Structure

Input impedance
Yin=gm+sCgs
Input-impedance matching
Low frequency approximation
Direct without passive components

1/gm=Rs=50 ohm

33

Noise Performance of CG Structure

2

G Geff

g m2

(1 g m Rs ) 2 2 ( Rs Cgs ) 2

N device G N in
NF
1
G N in

4kT g m
g m2
4kTRs
(1 g m Rs ) 2 2 ( RsCgs ) 2

1
(1 g m Rs ) 2 2 Rs2C gs2
Rs g m

2
1 4 2
T
Signal attenuated
34

Power Transfer of CG Structure

Rs = RL = R = 50 ohm

Z in Z s* 1 g m Rs sRsC gs
S11

Z in Z s 1 g m Rs sRsC gs

sRsC gs

2 sRsCgs
S21 2 RLGeff

2 RL g m

1 g m Rs sRsC gs

2
2 sC gs

S11=0, S21=1 @ Low frequency

35

Summary CG Structure
Noise performance
No extra resistive noise source
Independent of power consumption

Impedance matching
Broadband input matching
No passive components

Power consumption
gm=1/50

Power transfer
Independent of power consumption
36

Inductor Degeneration Structure

Rs
Vs

Rs

Lg

Zin
iin

Ls

Vs

iout

Lg
Vin

Cgs

Vgs

gmVgs

Ls

1
Vin I in sLg I in
( I in g mVgs ) sLs
sC gs
1
1
I in sLg I in
( I in g m I in
) sLs
sC gs
sC gs

1
g m Ls
I in s ( Lg Ls )

sC gs C gs

Zin
37

Input Matching for ID Structure

Rs

Zin

Vs

Ls

Cgs

gmLs/Cgs

Zin=Rs

iout

Lg
Vgs

gmVgs

1
g m Ls
Z in s ( Lg Ls )

sC gs C gs

IM{Zin}=0

1

( Lg Ls )C gs

RE{Zin}=Rs

g m Ls
Rs
C gs

2
0

38

Effective Transconductance
Rs

Zin

Ls
gmLs/Cgs

Vs

Geff

iout

Lg
Cgs

Vgs

gmVgs

I out g m ( sC gs )

Vs
Rs Z in

gm

1 s ( RsC gs g m Ls ) s 2C gs ( Lg Ls )

39

Noise Factor of ID Structure

G Geff

g m2

[1 2C gs ( Lg Ls )]2 2 ( RsC gs g m Ls ) 2

Calculate NF at 0
NF

N device G N in

1
G N in

= 0 @ 0
4kT g m
g m2
4kTRs 2
( RsC gs g m Ls ) 2

2 ( RsCgs g m Ls ) 2
Rs g m

40

Input Quality Factor of ID Structure

I

Rs
Vs

Stored power
Q
Lost power

Ls
gmLs/Cgs

I I * C
1

*
II R
CR

Lg
Cgs

1
1
Qin

CR C gs ( Rs g m Ls / C gs )
1
1

( Rs C gs g m Ls ) 2Rs C gs
41

Noise Factor of ID Structure

1
Qin
( RsC gs g m Ls )

NF

1
2 ( RsCgs g m Ls ) 2
Rs g m
1
1
Rs g m Qin2

Increase power transfer

gmLs/Cgs = Rs
Decrease NF
gmLs/Cgs = 0
Conflict between
Power transfer
Noise performance

42

Further Discussion on NF
Frequency @ 0
NF

1
2 ( RsC gs g m Ls ) 2
Rs g m
4( g m Ls ) 2
1
1
Rs g m C gs ( Lg Ls )
4 Ls
1
Lg Ls

2 ~= 1/Cgs/(Lg+Ls)
Input impedance
matched to Rs
RsCgs=gmLs

Ls Rs T

Suitable for hand

calculation and design
Large Lg and small Ls

Ls Lg 1 02C gs
43

Power Transfer of ID Structure

Rs = RL = R = 50 ohm

2
Z in Z s* 1 s C gs ( Lg Ls ) sg m Ls sRsCgs
S11

Z in Z s 1 s 2C gs ( Lg Ls ) sg m Ls sRsCgs

1 s 2Cgs ( Lg Ls )

1 s ( g m Ls RsC gs ) s 2C gs ( Lg Ls )
S 21 2Geff RL

@ 20

2 g m RL
1 s ( RsCgs g m Ls ) s 2Cgs ( Lg Ls )

1
( Lg Ls )C gs

S11 0; S 21

1
Qin
( RsC gs g m Ls )

2 g m RL
R
j 2 g m RLQin j T L
j0 ( Rs C gs g m Ls )
0 Rs

44

Computing Av without S-Para

Rs
Vs

Lg
Ls

At resonance and imput match : Z in Rs

I in Vs 2 Rs ;

I o g mVgs g m I in j0C gs

I o g mVs 2 j0C gs Rs jVsT 20 Rs

Vo
T
1/ 2
Av
j
Vs
0 Rs (Yo Yo )
45

Power Consumption
P I DVDD

Cox W
(Vgs VT ) 2 VDD
2 L
2
Cgs CoxWL
3

W
g m Cox (Vgs VT )
L
g m2 L2 3
W
2

Cox
Vgs VT
C gs 2
L

g m Ls
Rs
C gs

gm

RsC gs
Ls

g m2 L2
L2 Rs2
L2 Rs2
VDD
P
VDD
C gsVDD
2
3C gs
3 Ls
3 L2s 02 ( Lg Ls )
2

L
1 T
L2VDD
1 L2 Rs2
VDD

P
C gsVDD

2 3

3
3 0 ( Lg Ls ) 3 0 Ls (1 Lg / Ls )
2 2
T

46

Power Consumption
L2 Rs2
1
P 2 3
0 Ls (1 Lg / Ls )

NF

4 Ls
1
Lg Ls

Technology constant
L: minimum feature size
: mobility, avoid mobility saturation region

Standard specification
Rs: source impedance
0: carrier frequency

Circuit parameter
Lg, Ls: gate and source degeneration inductance
47

Summary of ID Structure
Noise performance
No resistive noise source
Large Lg

Impedance matching
Matched at carrier frequency
Applicable to wideband application, S11<-10dB

Power transfer
Narrowband
Increase with gm

Power consumption
Large Lg
48

Cascode
LL
Vbias
Rs
Vs

M2

Isolation to improve S12

@ high frequency
Vo
Vd1

Lg
M1
Ls

Small range at Vd1

Reduced feedback effect
of Cgd

Improve noise
performance

49

LL
Rs

Rs

Vo

Lg
Vs
Ls

Vo
Cgs

M1

Vs

Lg

Ls

Vgs

gmVgs
LL

50

LNA Design Example (1)

M4
Vbias
Rs
Vs

Lb1
Cb1
Input
bias

Vdd
Lvdd

Lb2

Cb2 V
out

Ld

Lout

Output
bias

M2

M3

Tm
Cm

Lg

M1

Lgnd

Ls

Off-chip
matching

[3] D. Shaeffer and T. Lee, A 1.5-V, 1.5-GHz CMOS low noise amplifier, IEEE J. Solid51
State Circuits, vol. 32, pp. 745 759, May 1997.

LNA Design Example (1)

Supply
filtering

Lvdd

M4

Ld

Vbias
Rs
Vs

Lb1
Cb1

Lout
M2

M3

Tm
Cm

Lg

M1

Lgnd

Ls
Unwanted
parasitics

[3] D. Shaeffer and T. Lee, A 1.5-V, 1.5-GHz CMOS low noise amplifier, IEEE J. Solid52
State Circuits, vol. 32, pp. 745 759, May 1997.

Circuit Details
Two-stage cascoded structure in 0.6 m
First stage
W1 = 403 m determined from NF
Ls accurate value, bondwire inductance
Ld = 7nH, resonating with cap at drain of M2

Second
4.6 dB gain
W3 = 200 m

53

54

LNA Design Example (2)

NF = 1 + K/gm
gm = gm1 + gm2
RB

IREF
VRF

IB1

M2
RX

Ns
Off-chip
matching

M1

Cs
CB

M4

CX

Vout1

M5

VB1

NL
Off-chip
matching

M7
M3

M6

[4] A. Karanicolas, A 2.7-V 900-MHz CMOS LNA and Mixer, IEEE J. Solid-State
Circuits, vol. 31, pp 1939 1944, Dec. 1996.

55

Simplified view

56

LNA Design Example (2)

M8

RB

IREF
VRF

IB1

M2
RX

Ns

M1

Cs
CB

M4

CX

Vout1

M5

NL

VB1

M7
M3

M6

Bias
feedback

[4] A. Karanicolas, A 2.7-V 900-MHz CMOS LNA and Mixer, IEEE J. Solid-State
Circuits, vol. 31, pp 1939 1944, Dec. 1996.

57

LNA Design Example (2)

M8

RB

IREF
VRF

IB1

M2
RX

Ns

M1

Cs
CB

M4

CX

Vout1

M5

NL

VB1

M7
M3

M6

Bias
feedback

[4] A. Karanicolas, A 2.7-V 900-MHz CMOS LNA and Mixer, IEEE J. Solid-State
Circuits, vol. 31, pp 1939 1944, Dec. 1996.

58

LNA Design Example (2)

VA

M8

RB

IREF
VRF

IB1

M2
RX

Ns

M1

Cs
CB

DC output = VB1

M4

CX

Vout1

M5

NL

VB1

M7
M3

M6

Bias
feedback

[4] A. Karanicolas, A 2.7-V 900-MHz CMOS LNA and Mixer, IEEE J. Solid-State
Circuits, vol. 31, pp 1939 1944, Dec. 1996.

59

60

LNA Design Example (3)

Objective is to design tunable RF LNA that

would:

Operate over very wide frequency range with very fine

selectivity
Achieve a good noise performance

Have a good linearity performance

Consume minimum power

61

LNA Architecture
The cascode architecture
provides a good input
output isolation
Transistor M2 isolates the
R1
Miller capacitance
Input Impedance is obtained
using the source
M3
degeneration inductor Ls
R2
Gate inductor Lg sets the
resonant frequency
LG
The tuning granularity is
Input to LNA
achieved by the output
matching network

VDD
LD

M2
M1

Matching
Network

Output to
Mixer

LS

62

Matching Network
The output matching tuning
network is composed of a
varactor and an inductor.
The LC network is used to
convert the load impedance
into the input impedance of
the subsequent stage.
A well designed matching
network allows for a maximum
power transfer to the load.
By varying the DC voltage
applied to the varactor, the
output frequency is tuned to a
different frequency.

63

Simulation Results - S11

The input return loss
S11 is less than 10dB
at a frequency range
between 1.4 GHz and
2GHz

Input return loss

64

Simulation results - NF
The noise figure is 1.8
dB at 1.4 GHz and rises
to 3.4 dB at 2 GHz.

Noise Figure

65

Simulation Results - S22

By controlling the voltage applied to the varactor the output frequency

is tuned by 2.5 MHz.

The output return loss at 1.77 GHz is 44.73 dB and the output return
loss at 1.7725 GHz 45.69 dB.

S22 at 1.77 GHz

S22 at 1.7725 GHz

66

Simulation Results - S22

The output return loss at 2 GHz is 26.47 dB and the output return
loss at 1.9975 GHz 26.6 dB.

S22 at 2 GHz

S22 at 1.9975 GHz

67

Simulation Results - S21

The overall gain of
the LNA is 12 dB

S21 at 1.4025 GHz

68

Simulation Results - Linearity

The third order input intercept is 3.16 dBm
-1 dB compression point ( the output level at which the actual gain
departs from the theoretical gain) is 12 dBm

IIP3

-1dB compression point

69

From an earlier slide:

k
Flicker noise V ( f ) WLC f
ox
Dominant at low frequency
2
g

Vg
Id

Vi

Thermal noise I d2 ( f ) 4kT g m

: empirical constant
2/3 for long channel
much larger for short channel
PMOS has less thermal noise

Input-inferred noise

k
Vi ( f ) 4kT

g m WLCox f
2

Not accurate for low voltage short channel devices

70

Modifications
Thermonoise
gm
I ( f ) 4kT g do 4kT

2
d

is called excess noise factor

= 2/3 in long channel
= 2 to 3 (or higher!) in short
channel NMOS (less in PMOS)

71

gdo vs gm in short channel

72

gdo vs gm in short channel

73

Fliker noise
Traps at channel/oxide interface randomly
capture/release carriers
k
V (f)
fWLCox
2
g

I (f)
2
d

Kf
n

Kf

f
f
Parameterized by Kf and n
Provided by fab (note n 1)
Currently: Kf of PMOS << Kf of NMOS due to buried channel

To minimize: want large area (high WL)

74

Induced Gate Noise

Fluctuating channel potential couples
capacitively into the gate terminal, causing a
noise gate current
2

ing 4kTg do

is gate noise coefficient

Typically assumed to be 2

Correlated to drain noise!

75

real
Input impedance

g m Ldeg
1
Z in ( s ) s ( Lg Ldeg )

sC gs
C gs
Set to be real and equal to source resistance:

1

( Lg Ldeg )C gs
2
0

g m Ldeg
C gs

Rs
76

Output noise current

I d2 ( f ) kT g do 1 2 c d d2 (4Q 2 1)

Noise scaling factor:

1
1 2 c d d2 (4Q 2 1)
4

gm
d
g do 5

Where for 0.18 process

c=-j0.55, =3, =6, gdo=2gm,
d = 0.32

0 ( Lg Ldeg )
1
Q

2 Rs0C gs
2 Rs
77

Noise factor
o
F 1
T

2Q

g do

1 2 c d (4Q 2 1) d2
gm

Noise factor scaling coefficient:

g do

1 2 c d (4Q 2 1) d2
K nf
2Q g m
Compare:

NF

0
N device G N in

2
2

1
0 4( Rs C gs ) 1
4
G N in
Rs g m
T 2Q
78

Noise factor scaling coefficient versus Q

79

Example
Assume Rs = 50 Ohms, Q = 2, fo = 1.8 GHz, ft = 47.8
GHz
1
Q
From

2 Rs0C gs

1
1
C gs

442 fF
2 Rs0Q 2(50)2 1.8e9(2)
Ldeg

Rs C gs
gm

Rs
50

0.17nH
T 2 47.8e9

1
1

Lg 2
Ldeg 17.5nH
( Lg Ldeg )C gs
0 C gs
2
0

80

Have We Chosen the Correct Bias Point?

IIP3 is also a function of Q

81

If we choose Vgs=1V
Idens = 175 A/m
From Cgs = 442 fF, W=274m
Ibias = IdensW = 48 mA, too large!
Solution 1: lower Idens => lower power,
lower fT, lower IIP3
Solution 2: lower W => lower power, lower
Cgs, higher Q, higher NF
82

Lower current density to 100

Need to verify that IIP3 still OK (once we know Q)

83

Lower current density to 100

g m 0.78
gm

0.68 d
g do 1.15
g do

2
0.68
0.43
5
5

g m 0.78mS
T

2 42.8 GHz
C gs
2.9 fF
We now need to re-plot the Noise Factor scaling coefficient
- Also plot over a wider range of Q

o
F 1
T

g do 1

1 2 c d (4Q 2 1) d2

g m 2Q

84

85

Recall

We previously chose Q = 2, lets now choose Q = 6

- Cuts power dissipation by a factor of 3!
- New value of W is one third the old one
W

274 m
91m
3
86

 Rs = 50 Ohms, Q = 6, fo = 1.8 GHz, ft =

42.8 GHz
Ibias = IdensW =100A/m*91m=9.1mA
Power = 9.1 * 1.8 = 16.4 mW
Noise factor scaling coeff = 10
Noise factor = 1+ wo/wt * 10
= 1+ 1.8G/42.8G *10 = 1.42
Noise figure = 10*log(1.42) = 1.52 dB
Cgs=442/3=147fF
Ldeg=Rs/wt=0.19nH
Lg=1/(wo^2Cgs) Ldeg = 53 nH
87

Other architectures of LNAs

Add output load to achieve voltage gain

In practice, use cascode to boost gain
Added benefit of removing Cgd effect
88

Differential LNA
Value of Ldeg is now much better controlled
Much less sensitivity to noise from other circuits
But:

Twice the power as the single-ended version

Requires differential input at the chip
89

LNA Employing Current Re-Use

PMOS is biased using a current mirror

NMOS current adjusted to match the PMOS current
Note: not clear how the matching network is achieving a 50 Ohm match
Perhaps parasitic bondwire inductance is degenerating the PMOS or
NMOS transistors?
90

Combining inductive
degeneration and current reuse
Current reuse to save power
Larger area due to two degeneration
inductor if implemented on chip
NF: 2dB, Power gain: 17.5dB, IIP3: 6dBm, Id: 8mA from 2.7V power supply
Can have differential version
F. Gatta, E. Sacchi, et al, A 2-dB Noise Figure 900MHz Differential CMOS LNA,
IEEE JSSC, Vol. 36, No. 10, Oct. 2001 pp. 1444-1452
91

At DC, M1 and M2 are in cascode

At AC, M1 and M2 are in cascade
S of M2 is AC shorted
Gm of M1 and M2 are multiplied.
Same biasing current in M1 & M2
LIANG-HUI LI AND HUEY-RU CHUANG, MICROWAVE JOURNAL from the February 2004 issue.

92

IM3 components in the drain

current of the main transistor has
the required information of its
nonlinearity
Auxiliary circuit is used to tune the
magnitude and phase of IM3
components
Addition of main and auxiliary
transistor currents results in
negligible IM3 components at
output

ia g m1va g v g v
2
m2 a

3
m3 a

ib g m 3vb3
i o ia ib
Sivakumar Ganesan, Edgar Snchez-sinencio, And Jose Silva-martinez
IEEE Transactions On Microwave Theory And Techniques, Vol. 54, No. 12, December 2006

93

MOS in weak inversion has speed problem

MOS transistor in weak inversion acts like bipolar
Bipolar available in TSMC 0.18 technology (not a parasitic BJT)
Why not using that bipolar transistor to improve linearity ?

94

Inter-stage Inductor gain boost

Inter-stage inductor with
parasitic capacitance form
impedance match network between
input stage and cascoded stage
boost gain lower noise figure.

Input match condition will be

affected

95

Folded cascode

Low supply voltage

Ld reduces or eliminates
Effect of Cgd1
Good fT

96

Design Procedure for Inductive

Source Degenerated LNA
Noise factor equations:

o
F 1
T

g do 1

1 2 c d (4Q 2 1) d2

g m 2Q

g do 1

K nf
1 2 c d (4Q 2 1) d2
g m 2Q

97

Targeted Specifications

Frequency
2.4 GHz ISM Band
Noise Figure
1.6 dB
IIP3
-8 dBm
Voltage gain20 dB
Power
< 10mA from 1.8V

98

Step 1: Know your process

A 0.18um CMOS Process
Process related

tox = 4.1e-9 m
= 3.9*(8.85e-12) F/m
= 3.274e-2 m^2/V.s
Vth = 0.52 V

Noise related

= gm/gdo
~ 2
~3
c = -j0.55
99

Step 2: Obtain design guide plots

100

Insights:
gdo increases all the way with current
density Iden
gm saturates when Iden larger than
120A/m
Velocity saturation, mobility degradation ---short channel effects
Low gm/current efficiency
High linearity

deviates from long channel value (1)

with large Iden

101

Obtain design guide plots

102

Insights:
fT increases with Vod when Vod is small and
saturates after Vod > 0.3V --- short channel
effects
Cgs/W increases slowly after Vod > 0.2V
fT begins to degrade when Vod > 0.8V
gm saturates
Cgs increases

Should keep Vod ~0.2 to 0.4 V

103

Obtain design guide plots

knf vs input Q and current density

3-D plot for visual

inspection

2-D plots for

design reference

104

Design trade-offs
For fixed Iden, increasing Q will reduce the
size of transistor thus reduce total power
---- noise figure will become larger
For fixed Q, reducing Iden will reduce
power, but will increase noise factor
For large Iden, there is an optimal Q for
minimum noise factor, but power may be
too high

105

Obtain design guide plots

Linearity plots :IIP3 vs. gate overdrive and transistor size

106

Insights:
MOS transistor IIP3 only, when embedded into
actual circuit:
Input Q will degrade IIP3
Non-linear memory effect will degrade IIP3
Output non-linearity will degrade IIP3

IIP3 is a very weak function of device size

Generally, large overdrive means large IIP3
But the relationship between IIP3 and gate overdrive
is not monotonic
There is a local maxima around 0.1V overdrive

107

Step 4: Estimate fT

Small current budget ( < 10mA )

does not allow large gate over drive :
Vod ~ 0.2 V ~ 0.4 V
fT ~ 40 ~ 44 GHz

108

Step 4: Determine Iden, Q and

Calculate Device Size

Gm/W~0.4

Select Iden = 70 A/m, =>Vod~0.23V

109

If Q = 4, IIP3 will have enough margin:

Estimated IIP3:
IIP3(from curve) 20log(Q) = 8-12 = -4dBm
Specs require: -8 dBm

110

Q=4 and Iden = 70A/m meet the

noise factor requirement

111

Gm=0.4*128 ~ 50 mS

fT = gm/(Cgs*2pi) = 48 GHz

112

Step 6: Simulation Verification

Large deviation

113

114

Comparison between targeted

specs and simulation results
Parameter
Noise Figure
Drain Current
Voltage gain
IIP3
P1dB
S11
Power supply

Target
1.6 dB
< 10mA
20 dB
-8 dBm

1.8 V

Simulated
0.8 dB
8 mA
21 dB
-6.4 dBm
-20dbm
-17 dB
1.8 V

115