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BipolarJunctionTransistors(BJTs)
Outline
BJTstructureandIVcharacteristics
PhysicaloperationofpowerBJTs
Switchingcharacteristics
Breakdownvoltage
Secondbreakdown
Onstatevoltage
Safeoperatingareas
CopyrightbyJohnWiley&Sons2003
BJTs1
BasicGeometryofPowerBJTs
emitter
opening
base
metallization
emitter
metallization
SiO2
N+
N+
N+
N+
P
N
N+
collector
FeaturestoNote
Multiplenarrowemittersminimizeemittercurrentcrowding.
Multipleparallelbaseconductorsminimizeparasiticresistanceinserieswiththebase.
CopyrightbyJohnWiley&Sons2003
BJTs2
BJTConstructionParameters
emitter
base
N
10
5 20
50200
(collector drift
region)
250
10
10
19
16
14
10
N+ 10
19
-3
cm
NPN
BJT
base
-3
cm
cm
collector
emitter
-3
-3
cm
collector
PNP
BJT
base
collector
emitter
FeaturestoNote
Widebasewidthlow(<10)beta.
Lightlydopedcollectordriftregionlargebreakdownvoltage.
CopyrightbyJohnWiley&Sons2003
BJTs3
DarlingtonconnectedBJTs
B
C
I
C
i
i E,D
N+
N+
B ,D
B,M
D
M
N-
SiO2
D
1
C
=DM+ D+ M
C ,D
Compositedevicehasrespectablebeta.
CopyrightbyJohnWiley&Sons2003
BJTs4
C,M
PowerBJTIVCharacteristic
hard
saturation
quasi-saturation
-1 / R
second breakdown
FeaturestoNote
i
>I
etc
B5
B4
2ndbreakdownmustbe
avoided.
B5
B4
active region
primary
breakdown
I B3
B2
BVCBO>BVCEOextended
blockingvoltagerange.
B1
I
I
BV
CEO(sus)
<0
=0
BV
CopyrightbyJohnWiley&Sons2003
Quasisaturationuniqueto
powerBJTs
CEO
BV
CBO
BJTs5
BJTInternalCurrentComponents
E-B depletion
layer
I
E
B
I
I pE
E
N
C-B depletion
layer
B
+
pC
P
I
nE
N-
Carrier distributions in
normal active region
IneIncbecauseLnb={Dnbnb}1/2
<<Wbaseandcollectorareamuch
largerthanemitterarea.
p,n
electrons
no
holes
p
no
Ine>>Ipebecauseofheavyemitter
doping.
I nC
W
base
p,n
IneandIpeflowviadiffusion.Inc
andIpcflowviadrift.
npo
CopyrightbyJohnWiley&Sons2003
holes
Ipc<<othercurrentcomponents
becauseveryfewholesinbcspace
chargeregion.
BJTs6
PowerBJTCurrentGain
Short base width conflicts with need for larger base width needed in HV
BJTs to accomodate CB depletion region.
Long base lifetime conflicts with need for short lifetime for faster
switching speeds
CopyrightbyJohnWiley&Sons2003
BJTs7
BetaversusCollectCurrent
log ( h
FE
max
Proportional to I
C,max
-1
C
log ( I )
C
C,max
10
Beta decrease at large collector current due to high level injection effects
(conductivity modulation where n = p) in base.
When n = p, base current must increase faster than collector current to
provide
extra holes. This constitutes a reduction in beta.
High level injection conditions aided by emitter current crowding.
CopyrightbyJohnWiley&Sons2003
BJTs8
EmitterCurrentCrowding
lateral
voltage drop
E
+
N
P
N
current crowding
C
current crowding
IBproportionaltoexp{qVBE/(kT)}
LatervoltagedropsmakeVBElargeratedgeofemitters.
Base/emittercurrentandthuscarrierdensitieslargeratedgeofemitters.Socalledemitter
currentcrowding.
Thisemittercurrentcrowdingleadstohighlevelinjectionatrelativelymodestvaluesof
current.
Reduceeffectofcurrentcrowdingbybreakingemittersintomanynarrowregionsconnected
electricallyinparallel.
CopyrightbyJohnWiley&Sons2003
BJTs9
QuasisaturationinPowerBJTs
B
PowerBJT
N+
N+
+ V BC stored charge
Activeregion
VBC<0
Quasisaturation
stored charge
VBC>0butdriftregionnot
completelyfilledwithexcess
carriers.
virtual base
Q
Q
1
Hardsaturation
VBC>0anddriftregion
filledwithexcesscarriers.
virtual base
Betadecreasesinquasisaturationbecauseeffectivebasewidth(virtualbase)widthhasincreased.
CopyrightbyJohnWiley&Sons2003
BJTs10
GenericBJTApplicationClampedInductiveLoad
V dc
D
R
v
+
i
Model of an
inductively-loaded
switching circuit
CurrentsourceIomodelsaninductiveloadwithanL/Rtimeconstant>>thanswitchingperiod.
PositivebasecurrentturnsBJTon(hardsaturation).Socalledforwardbiasoperation.
Negativebasecurrent/baseemittervoltageturnsBJToff.Socalledreversebaisoperation.
FreewheelingdiodeDFpreventslargeinductiveovervoltagefromdevelopingacrossBJT
collectoremitterterminals.
CopyrightbyJohnWiley&Sons2003
BJTs11
PowerBJTTurnonWaveforms
I
B,on
t
i (t)
B
t d,on
V
(t)
BE
BE,on
t
V
BE,of
t ri
Io
i (t)
C
t fv1
t
V dc
fv2
V
CE,sat
(t)
CE
CopyrightbyJohnWiley&Sons2003
BJTs12
ExcessCarrierGrowthDuringBJTTurnon
carrier
density
versus
position
time
time
+
N
emitter
P
base
Ncollector
drift region
N+
collector
contact
Growthofexcesscarrierdistributionsbeginsaftertd(on)whenBEjunctionbecomesforwardbiased.
Entranceintoquasisaturationdiscernablefromvoltageorcurrentwaveformatstartoftimetvf2.
CollectorcurrenttailingduetoreducedbetainquasisaturationasBJTturnsoff.
Hardsaturationenteredasexcesscarrierdistributionhassweptacrossdirftregion.
CopyrightbyJohnWiley&Sons2003
BJTs13
TurnoffWaveformswithControlledBaseCurrent
I
i
B,on
I B,of
diB/dt
(t)
B
BE,on
VBE,of
ts
tf
I
(t)
t rv
V
CE,sat
1
V
dc
(t)
CE
t rv
2
Basecurrentmustmakeacontrolledtransition(controlledvalueofdi B/dt)from
positivetonegativevaluesinordertominimizeturnofftimesandswitchinglosses.
CopyrightbyJohnWiley&Sons2003
BJTs14
ControlledTurnoffExcessCarrierRemoval
Q2
time
Q3
Q1
time
+
N
emitter
P
base
Ncollector
drift region
N+
collector
contact
ts=storagetime=timerequiredtoremoveexcesschargeQ3.
trv1=timetoremovechargeQ2holdingtransistorinquasisaturation.
trv2=timerequiredforVCEtocompleteitsgrowthtoVdcwithBJTinactiveregion.
tfi=timerequiredtoremoveremainingstoredchargeQ1inbaseandeachedgeofcutoff.
CopyrightbyJohnWiley&Sons2003
BJTs15
TurnoffWaveformswithUncontrolledBaseCurrent
I B,on
i
I B,off
(t)
B
BE,on
ts
(t)
BE
V
t fi1
collector current
"tailing"
t fi2
I o
i
BE,off
(t)
t rv1
V
CE,sat
v
(t)
CE
dc
rv2
Excessiveswitchinglosseswithcollectorcurrenttailing.
CopyrightbyJohnWiley&Sons2003
BJTs16
UncontrolledTurnoffExcessCarrierRemoval
time
carrier
density
versus
position
time
time
+
N
emitter
time
P
base
Ncollector
drift region
N+
collector
contact
Uncontrolledbasecurrentremovesstoredchargeinbasefasterthanincollectordriftregion.
Baseemitterjunctionreversebiasedbeforecollectorbasejunction.
Storedchargeremainingindriftregionnowcanbeonlyremovedbythenegativebasecurrent
ratherthanthemuchlargercollectorcurrentwhichwasflowingbeforetheBEjunctionwas
reversebiased.
Takeslongertimetofinishremovalofdriftregionstoredchargethusleadingtocollectorcurrent
tailingandexcessiveswitchinglosses.
CopyrightbyJohnWiley&Sons2003
BJTs17
DarlingtonSwitchingBehavior
V
D
R
Q
D
+
v
dc
Q
D
1
TurnonwaveformsforDarlingtonverysimilartosingleBJTcircuit.
TurnontimessomewhatshorterinDarlingtoncircuitbecauseoflargebasedriveformainBJT.
TurnoffwaveformssignificantlydifferentforDarlington.
DiodeD1essentialforfastturnoffofDarlington.Withit,QMwouldbeisolatedwithoutany
negativebasecurrentonceQDwasoff.
OpenbaseturnoffofaBJTreliesoninternalrecombinationtoremoveexcesscarriersandtakes
muchlongethanifcarriersareremovedbycarriersweepoutviaalargecollectorcurrent.
CopyrightbyJohnWiley&Sons2003
BJTs18
DarlingtonTurnoffWaveforms
I
i
(t)
B
B,on
di B/dt
I B,of
t
(t)
B,D
t
be
(t)
B,M
(t)
C,D
I B,of
Io
i
(t)
C,M
t
BE,on
vBE
(t)
t
V BE,of
Q & Q
on
D
M
CE,sat
Q
of
D
V dc
(t)
CE
CopyrightbyJohnWiley&Sons2003
BJTs19
PowerBJTBreakdownVoltage
Blocking voltage capability of BJT limited by breakdown of CB junction.
BVCBO = CB junction breakdown with emitter open.
BVCEO = CB junction breakdown with base open.
BE junction forward biased even when base current = 0 by reverse current from CB junction.
Excess carriers injected into base from emitter and increase saturation current of CB junction.
Extra carriers at CB junction increase likelyhood of impact ionization at lower voltages , thus
decreasing breakdown voltage.
Wide base width to lower beta and increase BVCEO.
Typical base widths in high voltage (1000V) BJTs = 5 to 10 and BV CEO = 0.5
CopyrightbyJohnWiley&Sons2003
BVCBO .
BJTs20
AvoidanceofReachthru
B
N+
- V CB +
+
P
+
+
+
+
N-
N+
Largeelectricfieldofdepletionregionwillaccelerateelectronsfromemitteracrossbaseand
intocollector.Resultinglargecurrentflowwillcreateexcessivepowerdissipation.
Avoidanceofreachthru
WidebasewidthsodepletionlayerwidthlessthanbasewidthatCBjunctionbreakdown.
HeavierdopinginbasethanincollectorsothatmostofCBdepletionlayerisindriftregion
andnotinthebase.
CopyrightbyJohnWiley&Sons2003
BJTs21
SecondBreakdown
i (t)
C
PrecipitiousdropinCEvoltageandperhaps
riseincollectorcurrent.
t
Simultaneousriseinhighlylocalizedregionsof
powerdissipationandincreasesintemperature
ofsameregions.
v (t)
CE
t
few microseconds
or less
2ndbreakdownduringBJTturnoffin
stepdownconvertercircuit.
CopyrightbyJohnWiley&Sons2003
1. Directobservationsviainfraredcameras.
2. Evidenceofcrystallinecrackingandeven
localizedmelting.
PermanentdamagetoBJTorevendevice
failureif2ndbreakdownnotterminatedwithin
afewsec.
BJTs22
2ndBreakdownandCurrentDensityNonuniformities
Minoritycarrierdevicespronetothermalrunaway.
Minoritycarrierdensityproportionaltoni(T)whichincreasesexponentiallywithtemperature.
Ifconstantvoltagemaintainedacrossaminoritycarrierdevice,powerdissipationcauses
increasesintemp.whichinturnincreasescurrentbecauseofcarrierincreasesandthusbetter
conductioncharacteristic.
Increaseincurrentatconstantvoltageincreasespowerdissipationwhichfurtherincreases
temperature.
Positivefeedbacksituationandpotentiallyunstable.Iftemp.continuestoincrease,situation
termedthermalrunaway.
Currentdensitiesnonuniformitiesindevicesanaccenuate
problems.
I
+
AssumeJA>JBandTA>TB
A
>
CopyrightbyJohnWiley&Sons2003
Astimeproceeds,differencesinJandTbetweenregionsA
andBbecomegreater.
Iftemp.onregionAgetslargeenoughsothatni>majority
carrierdopingdensity,thermalrunawaywilloccurand
devicewillbein2ndbreakdown.
BJTs23
CurrentCrowdingEnhancementof2ndBreakdownSusceptibility
lateral voltage
drop
E
+
N
Emittercurrentcrowding
duringeitherturnonorturnoff
accenuatespropensityofBJTs
to2ndbreakdown.
P
N
current crowding
current crowding
C
lateral voltage drop
E
+
N
Minimizebydividingemitter
intomanynarrowareas
connectedelectricallyin
parallel.
P
N
CopyrightbyJohnWiley&Sons2003
current
crowding
BJTs24
VelocitySaturationandSecondBreakdown
Electron drift velocity
6
8x10
cm/sec
sat = 15 kV/cm
+
N
+
N
NJc
+
N
Jc
+
N
Electric field
N-
max
LargecurrentdensityindriftregionBJTactive.
Jc>qnNdEsat.Extraelectronsneededtocarry
extracurrent.
Moderatecurrentindriftregion
BJTactive
ElectricfieldE1=Jc/(qnNd)<Esat
CopyrightbyJohnWiley&Sons2003
Negativespacedensitygivesrisetononuniform
electricfield.
Emaxmayexceedimpactionizationthreshold
whiletotalvoltage<BVCEO.
BJTs25
ContributionstoBJTOnStateLosses
E
+
-
P
I
N
N+
+
V
V
BE,sat
BE,sat - V BC,sat
BC,sat
Re
VBE,satVBC,sattypically0.10.2Vat
moderatevaluesofcollectorcurrent.
Pon=ICVCE,sat
VCE,sat=VBE,satVBC,sat+Vd+IC(Rc+Re)
CopyrightbyJohnWiley&Sons2003
RiseinVBE,satVBC,satatlargercurrents
duetoemittercurrentcrowdingand
conductivitymodulationinbase.
BJTs26
BJTSafeOperatingAreas
Forwardbiassafeoperatingarea
log( i C )
I
Reversebiassafeoperatingarea
CM
i
10
-5
I
sec
CM
RBSOA
T j,max
10
-4
sec
V
2nd
2nd
breakdown
breakdown
10
-3
sec
dc
BV
CopyrightbyJohnWiley&Sons2003
CEO
BE,of
=0
BV
log ( v
)
CE
BE,of < 0
BJTs27
BV
CBO
v
CE