ID-1006007 Level-4,Term-1 Submitted to-Dr. Sharif MohammadMominuzzaman Professor , EEE Department ,BUET
Recent challenges in FET
industry
1. Decreasing The minimum chip length ,
which has reached a certain limit in the silicon based industry 2.Decreasing the power consumption in the electronic devices , especially in the subthreshold region where the digital logic indicates zero Improving high electron transport characteristics in inter chip connections
Characteristics of CNT FET
It flows holes for negative gate to source voltage &
electron for the positive gate-source voltage It flows minimum current for gate-source voltage=drain-source voltage/2 The sub threshold region occurs mainly due to the schottky barrier between metal contact & the CNT , which is high for the situation stated above Increasing the gate-source voltage from neutral point means the schottky barrier decays exponentially and the flow becomes independent of gate-source voltage at around 0.6V from the neutral point .This is the linear region where current doesnt depend on Vgs anymore but remains proportional to Vds
Characteristics of CNT FET
At a point of Vds increment the current
reaches to a saturation point & its independent of any terminal voltages The subthreshold region graph shows that for
Characteristics of CNT FET
Ultra thin oxide layer the current due to tunneling effect decreases , and the thermal power dissipation decreases remarkably even to 0.3mV/degree for 2nm oxide layer . For bigger layer of oxide than 10nm ,its heat dissipation ability is less than silicon based mosfets .
Advantages of using CNT in FET
CNT based FET has a length of few
centimeters and diameter comparable to nm range , so the device length can be more decreased than before The gate oxide can be super thin , even upto 2 nm which decreases the subthreshold region current to the sufficient tolerable limit so the power consumption decreases Its unique ambipolar charectarstics means it can be used in making p-FET & n-FET at the same time , so the process technology is much easier.
Disadvantages of using CNT in
FET
The first disadvantages is that its temperature
rise while conducting can be worse than mosfets when it has traditional oxide layer depth of 80-100nm, but for ultra thin oxide layer this characteristics is remarkably improved The schottky barrier at the metallic contact is the main disadvantage . The high schottky barrier lead to inefficent chips . This problem can be solved by changing the geomatrical shape of the metalic contact , using different types of metallic contact & doping the CNT
CNT based Optoelectronics
Devices-ambipolar method
The minimum current conduction situation
in CNT based FET means the hole and the electrons combine with each other and thus the energy is released as photons , minority carrier injection also leads to this effect Thus as the voltage is more near to the minimum current condition , the energy or photoluminescence can be controlled by it This light or radiation is strictly along the axis of CNT its position can be controlled by the gate voltage
Disadvantages of ambipolar methods
The radiation has a very wide band
characteristics which is poor when we want to create visible light devices like led The efficiency is very poor , 1 in a million hole-electron pair would create radiation in visible range which is recently increased to one in thousands Thus the scientist switched on to more unipolar methods
Unipolar photolumicense
Only p type or n type CNT is created by doping. By
gate trench effect & due to hetero problems like diffusion or abnormalities , the high electric field creates hole electron pairs due to collision with the carrier .Resulting radiation is very bright , so the abnormalities or errors in CNT can be detected by this Splitting the gate to make p type & n type devices beside each other can make 100 times better radiation than ambipolar systems Thin flim can lead to more robust structure for optoelectronic devices with the larger diameter nanotube shares the principle region of radiation
Conclusions
CNT can be used to make future FETs ,a
as it solves the recent challenges in the industry . But the process technology is expensive & less reliable along with the high schottky barrier represents the main challenge CNT based optoelectronics system an be used in future if the radiation can be made within the narrow band region & efficiency is increased to a sufficient level