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Cut-off region
linear region
linear region
CMOS Latch-Up
Latch up pertains to a failure
mechanism where a parasitic Silicon
Controlled Rectifier (SCR) is
inadvertently created within a circuit,
causing a high amount of current to
continuously flow through it once it is
accidentally triggered or turned on.
Depending on the circuits involved, the
amount of current flow produced by this
mechanism can be large enough to
result in permanent destruction of the
device due to Electrical OverStress
(EOS).
CMOS Latch-Up
CMOS Latch-Up
Effect:
CMOS transistor not functioning
properly.
If the transistor gain and resistance
increase continuously, latch-up current
can permanently damage or destroying
junctions. Therefore, the transistor
cant be use.
CMOS Latch-Up
Prevention:
1. Latch up-resistant design where a layer of
insulating oxide (called a trench) surrounds
both the NMOS and the PMOS transistors.
This breaks the parasitic SCR structure
between these transistors.
CMOS Latch-Up
Prevention:
2. Reduce the well and substrate resistances
will producing lower voltage drops.
Higher substrate doping level.
Low resistance contact to GND.
Guard rings around p-well or n-well.